CN208062255U

CN208062255U - A kind of adjustable absorber of graphene

Info

Publication number: CN208062255U
Application number: CN201820431894.3U
Authority: CN
Inventors: 陈旭生
Original assignee: China Jiliang University
Current assignee: China Jiliang University
Priority date: 2018-03-28
Filing date: 2018-03-28
Publication date: 2018-11-06
Anticipated expiration: 2028-03-28

Abstract

The utility model discloses a kind of adjustable absorbers of graphene.It includes lower layer graphene, and dielectric layer, intersects column, upper layer graphene at middle layer graphene；The upper layer of lower layer graphene is dielectric layer, the upper layer of dielectric layer is middle layer graphene, and the upper layer of middle layer graphene is to intersect column, and the upper layer for intersecting column is upper layer graphene, by adding the fermi level of bias voltage adjustment graphene layer, the tuning of THz wave absorption peak is realized.The utility model has compact-sized novel, absorptivity height, control principle simple.

Description

A kind of adjustable absorber of graphene

Technical field

The utility model is related to absorber more particularly to a kind of adjustable absorbers of graphene.

Background technology

In recent years, as the THz wave developed on connection electromagnetic spectrum between quite ripe millimeter wave and infrared light A undoubtedly brand-new research field all hides huge value in all respects.THz wave 0.1~10THz of frequency, Respective wavelength is 0.03mm~3mm.For a long time, it is generated and detection method due to lacking effective THz wave, and it is traditional Microwave technology compares with optical technology, and people are very few to the understanding of the wave band properties of electromagnetic radiation, so that the wave band becomes Terahertz gap in electromagnetic spectrum.With the breakthrough in terahertz emission source and Detection Techniques, the unique superior spy of Terahertz Property be found and material science, detection of gas, biology and medicine detection, communication etc. show huge application prospect. It may be said that Terahertz Technology science is not only the important foundation problem in scientific technological advance, but be generation information industry and The great demand of basic science development.Terahertz system is mainly made of radiation source, sensitive detection parts and various functions device.Its In, absorber just plays key player.

The current THz wave absorber studied both at home and abroad is mainly to be realized by designing different geometric parameter structures Adjustable function limits the flexible Application function of absorber in this way, and cost is higher.It can flexible modulation so design is a kind of The absorber of THz wave absorption peak is very important.For disadvantage mentioned above, the utility model proposes a kind of bias voltage to adjust The absorber of absorption peak frequency is saved, compact-sized novel, absorptivity height, control principle are simple.

Invention content

The utility model provides a kind of adjustable absorber of graphene, and technical solution is as follows：

Graphene is adjustable, and absorber includes lower layer graphene, and dielectric layer, intersects column, upper layer graphene at middle layer graphene；Under The upper layer of layer graphene is dielectric layer, and the upper layer of dielectric layer is middle layer graphene, and the upper layer of middle layer graphene is to intersect column, is intersected The upper layer of column is upper layer graphene.

Based on said program, following preferred embodiment can be further used：

The length of the lower layer graphene be 60 μm~64 μm, width be 60 μm~64 μm, thickness be 0.34nm~ 0.35nm.The dielectric layer material is silicon, and length is 60 μm~64 μm, and width is 60 μm~64 μm, is highly 30 μm~32 μm.The middle layer graphene length and width is all 60 μm~64 μm, and thickness is 0.34nm~0.35nm, the middle part subtracted Divide geometry sizes identical as column is intersected.The intersection column material is silicon, and it is identical by two geometries to intersect column Rectangle intersect vertically, rectangular length be 56 μm~60 μm, width be 15 μm~17 μm, highly for 35 μm~ 37μm.The upper layer graphene 1, which is completely covered on, to intersect on column, and thickness is 0.34nm~0.35nm.By adding bias voltage The fermi level of graphene layer is adjusted, realizes the tuning of THz wave absorption peak.The present invention has compact-sized novel, absorptivity High, the advantages that control principle is simple.

Description of the drawings

Fig. 1 is the tomograph of the adjustable absorber of graphene；

Fig. 2 is the middle layer graphene vertical view of the adjustable absorber of graphene；

Fig. 3 is the adjustable absorber of graphene in initial resonant frequency 0.4THz distribution map of the electric field；

Fig. 4 is the performance chart of the adjustable absorber of graphene.

Specific implementation mode

As shown in Figure 1, the adjustable absorber of graphene includes lower layer graphene 5, dielectric layer 4, intersects column at middle layer graphene 3 2, upper layer graphene 1；The upper layer of lower layer graphene 5 is dielectric layer 4, and the upper layer of dielectric layer 4 is middle layer graphene 3, middle level graphite The upper layer of alkene 3 is to intersect column 2, and the upper layer for intersecting column 2 is upper layer graphene 1.

5 length of lower layer graphene be 60 μm~64 μm, width be 60 μm~64 μm, thickness be 0.34nm~ 0.35nm.4 material of dielectric layer be silicon, length be 60 μm~64 μm, width be 60 μm~64 μm, highly for 30 μm~ 32μm.3 length and width of middle layer graphene is all 60 μm~64 μm, and thickness is 0.34nm~0.35nm, in subtracting Between partial geometry shape size it is identical as column 2 is intersected.2 material of intersection column is silicon, and it is complete by two geometries to intersect column 2 Exactly the same rectangle intersects vertically, and rectangular length is 56 μm~60 μm, and width is 15 μm~17 μm, is highly 35 μm~37 μm.The upper layer graphene 1, which is completely covered on, to intersect on column 2, and thickness is 0.34nm~0.35nm.

Embodiment 1

Graphene is adjustable absorber：

In the present embodiment, the structure and each component shape of graphene is adjustable absorber as described above, therefore repeat no more, but The design parameter of each component is as follows：The length of lower layer graphene is 64 μm, and width is 64 μm, thickness 0.35nm.Dielectric layer material Material is silicon, and length is 64 μm, and width is 64 μm, is highly 32 μm.Middle layer graphene degree is 64 μm, and width is 64 μm, and thickness is 0.35nm.Intersection column material is silicon, intersects column and is intersected vertically by two identical rectangles of geometry, rectangle Length be 60 μm, width be 17 μm, be highly 37 μm.Upper layer graphene, which is completely covered on, to intersect on column, thickness 0.35nm. The property indices of graphene is adjustable absorber are tested using COMSOL Multiphysics softwares, and Fig. 4 is graphene The performance chart of adjustable absorber, it can be seen that when graphene fermi level is in 0.3eV, the absorption peak of absorber is located at Frequency is absorptivity 0.998 at 0.4THz；When fermi level reaches 0.6eV, 0.9eV, the absorption peak of absorber distinguishes position At Frequency point 0.5THz, 0.6THz, corresponding absorptivity is 0.998,0.999, realizes absorption frequency point adjustable function.

Claims

1. a kind of adjustable absorber of graphene, it is characterised in that it includes lower layer graphene (5), dielectric layer (4), middle layer graphene (3), intersect column (2), upper layer graphene (1)；The upper layer of lower layer graphene (5) is dielectric layer (4), and the upper layer of dielectric layer (4) is Middle layer graphene (3), the upper layer of middle layer graphene (3) are to intersect column (2), and the upper layer for intersecting column (2) is upper layer graphene (1).

2. a kind of adjustable absorber of graphene as described in claim 1, it is characterised in that the length of the lower layer graphene (5) Degree is 60 μm~64 μm, and width is 60 μm~64 μm, and thickness is 0.34nm~0.35nm.

3. a kind of adjustable absorber of graphene as described in claim 1, it is characterised in that described dielectric layer (4) material is Silicon, length are 60 μm~64 μm, and width is 60 μm~64 μm, is highly 30 μm~32 μm.

4. a kind of adjustable absorber of graphene as described in claim 1, it is characterised in that the length of the middle layer graphene (3) Degree and width all be 60 μm~64 μm, thickness be 0.34nm~0.35nm, the middle section geometry sizes subtracted with intersect Column (2) is identical.

5. a kind of adjustable absorber of graphene as described in claim 1, it is characterised in that described intersection column (2) material is Silicon intersects column (2) and is intersected vertically by two identical rectangles of geometry, and rectangular length is 56 μm~60 μm, width is 15 μm~17 μm, is highly 35 μm~37 μm.

6. a kind of adjustable absorber of graphene as described in claim 1, it is characterised in that the upper layer graphene (1) is complete It is covered in and intersects on column (2), thickness is 0.34nm~0.35nm.