CN208043748U - A kind of detection device - Google Patents
A kind of detection device Download PDFInfo
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- CN208043748U CN208043748U CN201820668170.0U CN201820668170U CN208043748U CN 208043748 U CN208043748 U CN 208043748U CN 201820668170 U CN201820668170 U CN 201820668170U CN 208043748 U CN208043748 U CN 208043748U
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Abstract
The utility model is related to a kind of detection devices, belong to microelectronic device technical field.The device includes：Metallic structural components to be tested；The acoustic resistance barrier being set on the metallic structural components to be tested；The surface acoustic wave sensor being set in the acoustic resistance barrier, when testing the metallic structural components to be tested, the surface acoustic wave that the acoustic resistance barrier makes the surface acoustic wave sensor generate acts on the surface of the metallic structural components to be tested.The detection device integrates surface acoustic wave sensor and hardware to be tested, solves phenomena such as cracking, avalanche may be occurred using binder, the technical issues of causing the failure of surface acoustic wave sensor, damage even to fall off, simultaneously, the surface acoustic wave for making surface acoustic wave sensor generate by acoustic resistance barrier acts on the surface of metallic structural components to be tested, without in hardware internal communication so that sensor has higher quality factor, resonance performance and measurement sensitivity.
Description
Technical field
The utility model belongs to microelectronic device technical field, and in particular to a kind of detection device.
Background technology
SAW device is very sensitive to the variation of physical quantity in itself and environment, therefore is widely used in various sensings
In, such as temperature sensor, torque sensor, pressure sensor, strain transducer.In general, being passed using surface acoustic wave
When sensor is detected the structural health (such as whether there is strain, crackle, damage) of hardware, need sound table
Wave sensor is pasted onto hardware surface, and used method of attaching has soldering, ceramic glue bond, chemical adhesive viscous
Close etc..But since the actual application environment of structural member is complex, using binder by surface acoustic wave sensor and gold to be measured
Belong to part when being bonded, phenomena such as cracking, avalanche may occur for binder, leads to failure, the damage of surface acoustic wave sensor
Even fall off.Moreover, because need to use binder, sensor chip that can not often be in direct contact with hardware, at this point,
The structural health information of hardware must be transferred to sensor chip via binder, and due in paste process, sensing
The uniformity of device chip stress surface is difficult to control, and the information that sensor chip obtains is caused to cause sensor there are larger distortion
The problems such as detection error is big, poor repeatability.
Utility model content
In consideration of it, the purpose of this utility model is to provide a kind of detection device, to effectively improve the above problem.
What the embodiments of the present invention were realized in：
The utility model embodiment provides a kind of detection device, including：Metallic structural components to be tested；It is set to described
Acoustic resistance barrier on metallic structural components to be tested；The surface acoustic wave sensor being set in the acoustic resistance barrier, to described
When metallic structural components to be tested are tested, the surface acoustic wave that the acoustic resistance barrier makes the surface acoustic wave sensor generate is made
Surface for the metallic structural components to be tested.
In the utility model optional embodiment, further include：It is set to slow on the metallic structural components to be tested
Ironing film layer, the acoustic resistance barrier are set on the buffer thin film layer.
In the utility model optional embodiment, the acoustic resistance barrier is Prague acoustic resistance barrier.
In the utility model optional embodiment, Prague acoustic resistance barrier includes：It is arranged according to periodic intervals
High acoustic impedance materials layer and layer of low acoustic impedance material, wherein it is height to be in direct contact with the metallic structural components to be tested
Acoustic impedance material layer.
In the utility model optional embodiment, Prague acoustic resistance barrier includes：It is arranged according to periodic intervals
High acoustic impedance materials layer and layer of low acoustic impedance material, wherein it is low to be in direct contact with the metallic structural components to be tested
Acoustic impedance material layer.
In the utility model optional embodiment, the numerical value in the period is any integer in 1-10.
In the utility model optional embodiment, the numerical value in the period is 5.
In the utility model optional embodiment, the surface acoustic wave sensor includes：It is set to the acoustic resistance barrier
On piezoelectric thin film layer, and the electrode structure that is prepared on the piezoelectric thin film layer.
In the utility model optional embodiment, the surface acoustic wave sensor is one port resonator, dual-port is humorous
Shake device, single port delay line or dual-port delay-line structure.
In the utility model optional embodiment, the buffer thin film layer is oxide or nitride film layer.
Detection device provided by the utility model, including：Metallic structural components to be tested；It is set to the metal to be tested
Acoustic resistance barrier on structure member；The surface acoustic wave sensor being set in the acoustic resistance barrier, to the metal to be tested
When structure member is tested, the surface acoustic wave that the acoustic resistance barrier makes the surface acoustic wave sensor generate acts on described wait for
Test the surface of metallic structural components.Surface acoustic wave sensor and metallic structural components to be tested are integrated in by the detection device
Together, i.e., it directly designs on metallic structural components surface to be tested, prepare surface acoustic wave sensor, rather than pressed by elder generation
Surface acoustic wave sensor is prepared on electric monocrystal chip, then is affixed to the mode on metallic structural components surface to be tested, is solved
Phenomena such as cracking, avalanche may occur using binder, causes the failure of surface acoustic wave sensor, damage even to fall off
Technical problem, meanwhile, the surface acoustic wave for making the surface acoustic wave sensor generate by acoustic resistance barrier acts on described to be tested
The surface of metallic structural components, without in metallic structural components internal communication to be tested so that sensor has higher quality
Factor, resonance performance and measurement sensitivity.
Other feature and advantage of the utility model will illustrate in subsequent specification, also, partly from specification
It becomes apparent, or is understood by implementing the utility model embodiment.The purpose of this utility model and other advantages can
It realizes and obtains by specifically noted structure in the specification, claims and attached drawing write.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only the utility model
Some embodiments for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other attached drawings.Shown in attached drawing, the above and other purpose, feature and advantage of the utility model will more
Clearly.Identical reference numeral indicates identical part in whole attached drawings.Do not painted by actual size equal proportion scaling deliberately
Attached drawing processed, it is preferred that emphasis is show the purport of the utility model.
Fig. 1 shows a kind of structural schematic diagram for detection device that one embodiment of the utility model provides.
Fig. 2 shows a kind of structural schematic diagrams for detection device that another embodiment of the utility model provides.
Fig. 3 shows a kind of structural schematic diagram for detection device that another embodiment of the utility model provides.
Fig. 4 shows a kind of structural schematic diagram for detection device that another embodiment of the utility model provides.
Icon：10- detection devices；11- metallic structural components to be tested；12- buffer thin film layers；The Prague 13- sound
Barrier layer；131- high acoustic impedance materials layers；132- layer of low acoustic impedance material；14- surface acoustic wave sensors；141- piezoelectricity is thin
Film layer；142- electrode structures.
Specific implementation mode
It is new below in conjunction with this practicality to keep the purpose, technical scheme and advantage of the utility model embodiment clearer
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Usually here described in attached drawing and
The component of the utility model embodiment shown can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiments of the present invention to providing in the accompanying drawings is not intended to limit requirement below
The scope of the utility model of protection, but it is merely representative of the selected embodiment of the utility model.Based in the utility model
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained without creative efforts, all
Belong to the range of the utility model protection.
It should be noted that：Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it further need not be defined and explained in subsequent attached drawing in a attached drawing.
In the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right",
The orientation or positional relationship of the instructions such as "inner", "outside" be based on the orientation or positional relationship shown in the drawings or practicality newly
Type product using when the orientation or positional relationship usually put, be merely for convenience of describing the present invention and simplifying the description, and
It is not that the device of instruction or hint meaning or element must have a particular orientation, with specific azimuth configuration and operation, therefore
It should not be understood as limiting the present invention.In addition, term " first ", " second ", " third " etc. are only used for distinguishing description, and
It should not be understood as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise clearly defined and limited, term " is set
Set ", " installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection,
Or it is integrally connected；It can be mechanical connection, can also be electrical connection；It can be directly connected, intermediary can also be passed through
It is indirectly connected, can be the connection inside two elements.For the ordinary skill in the art, it can be managed with concrete condition
Solve the concrete meaning of above-mentioned term in the present invention.
In use surface acoustic wave sensor to the structural health of hardware (such as whether there is strain, crackle, damage
It is bad) when being detected, need surface acoustic wave sensor being pasted onto hardware surface, used method of attaching has tin
Weldering, ceramic glue bond, chemical adhesive bonding etc..But since the actual application environment of structural member is complex, using bonding
When agent is bonded surface acoustic wave sensor and metalwork to be measured, phenomena such as cracking, avalanche may occur for binder, cause
Failure, the damage of surface acoustic wave sensor even fall off.Moreover, because needing that binder, sensor chip is used often can not
It is in direct contact with hardware, at this point, the structural health information of hardware must be transferred to sensor core via binder
Piece, and since in paste process, the uniformity of sensor chip stress surface is difficult to control, lead to the letter of sensor chip acquisition
The problems such as ceasing there are larger distortion, causing big sensor detection error, poor repeatability.
For the defect present in above scheme, be inventor being obtained after putting into practice and carefully studying as a result,
Therefore, the discovery procedure of the above problem and the solution party that hereinafter the utility model embodiment is proposed regarding to the issue above
Case all should be the contribution that inventor makes the utility model during the utility model.
First embodiment
In consideration of it, a kind of detection device 10 that the utility model embodiment provides, please refers to Fig.1 and Fig. 2.The detection fills
Setting 10 includes：Metallic structural components 11 to be tested；The acoustic resistance barrier being set on the metallic structural components to be tested 11；Setting
Surface acoustic wave sensor 14 in the acoustic resistance barrier.
In the present embodiment, which integrates surface acoustic wave sensor 14 and metallic structural components 11 to be tested
Together, i.e., it directly designs on 11 surface of metallic structural components to be tested, prepare surface acoustic wave sensor 14, rather than pass through
Surface acoustic wave sensor 14 is first prepared on piezoelectric monocrystal substrate, then is affixed to 11 surface of metallic structural components to be tested
Mode, to solve technical problem of the existing technology.
Simultaneously, it is contemplated that when testing the metallic structural components 11 to be tested, the surface acoustic wave sensor 14
The surface acoustic wave of generation is easy to scatter inside the metallic structural components, in surface acoustic wave sensor 14 in metal to be tested
Acoustic resistance barrier is set between structure member 11, so as to, when testing the metallic structural components 11 to be tested, the sound
The surface acoustic wave that barrier layer makes the surface acoustic wave sensor 14 generate acts on the table of the metallic structural components to be tested 11
Face, without in 11 internal communication of metallic structural components to be tested so that sensor have higher quality factor, resonance performance and
Measurement sensitivity.
As an alternative embodiment, the acoustic resistance barrier can be quartz layer, silica (SiO2) layer, three oxidations
The layer of low acoustic impedance material 132 such as two aluminium (Al2O3) layer.As an alternative embodiment, the acoustic resistance barrier can be titanium layer,
The high acoustic impedance materials such as tungsten layer, layer gold, platinum layer layer 131.
As another optional embodiment, which is Prague acoustic resistance barrier 13.Further, the Bradley
Lattice acoustic resistance barrier 13 includes：According to the high acoustic impedance materials layer 131 and layer of low acoustic impedance material 132 of periodic intervals setting.
Wherein, as a kind of optional set-up mode, as shown in Figure 1, can be arranged according to high acoustic impedance materials layer 131
In on the metallic structural components 11 to be tested, the layer of low acoustic impedance material 132 is set to the high acoustic impedance materials layer
Mode on 131 is arranged.That is, according to high acoustic impedance materials layer 131, layer of low acoustic impedance material 132, high acoustic impedance materials layer
131, layer of low acoustic impedance material 132, high acoustic impedance materials layer 131, layer of low acoustic impedance material 132 ... mode be arranged.
Wherein, as another optional set-up mode, as shown in Fig. 2, can be according to the layer of low acoustic impedance material
132 are set on the metallic structural components to be tested 11, and the high acoustic impedance materials layer 131 is set to the low acoustic impedance material
Mode on the bed of material 132 is arranged.I.e. according to layer of low acoustic impedance material 132, high acoustic impedance materials layer 131, layer of low acoustic impedance material
132, high acoustic impedance materials layer 131, layer of low acoustic impedance material 132, the mode of high acoustic impedance materials layer 131 ... are arranged.
Wherein, it should be noted that the above-mentioned spaced period is integer more than or equal to 1, such as 1,2,3,4,5,6,
7,8,9,10 etc..When the periodicity is 5, then it represents that Prague acoustic resistance barrier 13 includes：5 high acoustic impedance materials layers 131
With 5 layer of low acoustic impedance material 132.
Wherein, the numerical value in the period can be set according to the design needs, in the case of conditions permit, the number in the period
Value can be relatively larger, to further increase quality factor and the sensitivity of sensor.
Wherein, above-mentioned high acoustic impedance materials layer 131 can be titanium layer, tungsten layer, layer gold, platinum layer etc..
Wherein, above-mentioned layer of low acoustic impedance material 132 can be quartz layer, silica (SiO2) layer, alundum (Al2O3)
(Al2O3) layer etc..
The surface acoustic wave sensor 14 being set in the acoustic resistance barrier can be one port resonator, dual-port resonance
Device, single port delay line or dual-port delay-line structure.Optionally, surface acoustic wave sensing includes：It is set to the acoustic resistance gear
Piezoelectric thin film layer 141 on layer, and the electrode structure 142 that is prepared on the piezoelectric thin film layer 141.
Wherein, the material of the piezoelectric thin film layer 141 can be zinc oxide (ZnO), aluminium nitride (AlN), gallium nitride (GaN),
The piezoelectricity monocrystal thin films materials such as lithium niobate (LiNbO3), lithium tantalate (LiTaO3), zirconium titanium plumbic acid (PZT).
Wherein, which can be the pure metals such as golden (Au), aluminium (Al), copper (Cu), platinum (Pt), also may be used
For various metals alloy material.
Wherein, it should be noted that when needing to test some metallic structural components, first by the metallic structural components surface
It needs part of detecting to be processed by shot blasting, keeps its surface smooth, then metallic structural components surface deposition sound barrier layer structure, setting
13 structure of Prague acoustic resistance barrier is set, according to design requirement, the thickness of each layer film in Prague acoustic resistance barrier 13 is obtained, by height
Acoustic impedance material layer 131- layer of low acoustic impedance material 132- ...-high acoustic impedance materials layer 131- layer of low acoustic impedance material
132 or layer of low acoustic impedance material 132- high acoustic impedance materials layers 131- ...-layer of low acoustic impedance material 132- acoustic impedances
Material layer 131 is deposited in order on metallic structural components surface, and the preparation method of acoustic impedance layer structure can be heavy for magnetron sputtering
Then product, pulsed laser deposition, electron beam evaporation, metal-organic chemical vapor deposition equipment etc. deposit high property on acoustic impedance layer
Can piezoelectric membrane, and prepare the electrode structure 142 of surface acoustic wave sensor 14 on it, reach surface acoustic wave sensor 14 with
The purpose that hardware is integrated without glue.
Second embodiment
Detection device 10 provided in this embodiment please refers to Fig. 3 and Fig. 4 compared with first embodiment, the detection device 10
Further include：The buffer thin film layer 12 being set between metallic structural components 11 to be tested and acoustic resistance barrier.That is, buffer thin film layer 12
It is set on metallic structural components 11 to be tested, the acoustic resistance barrier is set on the buffer thin film layer 12.
On the one hand, which it is higher smooth can so that the surface of metallic structural components 11 to be tested has
Degree, although the surface of the metallic structural components 11 to be tested after finely polishing but still relative coarseness, passes through and is arranged one layer
Buffer thin film layer 12 improves this state.On the other hand, which can enhance acoustic resistance barrier and ensaying to be measured
Belong to structure member 11 between adhesive force, make surface acoustic wave sensor 14 not cracky, fall off.
Wherein, the buffer thin film layer 12 be oxide or nitride film layer, for example, for alundum (Al2O3) (Al2O3),
Silica (SiO2), magnesia (MgO), silicon nitride (Si3N4), boron nitride (BN) etc..
Wherein, it should be noted that when needing to test some metallic structural components, first by the metallic structural components surface
It needs part of detecting to be processed by shot blasting, keeps its surface smooth, then metallic structural components surface deposition buffer thin film layer 12, usually
Adoptable mode has magnetron sputtering deposition, pulsed laser deposition, electron beam evaporation, metal-organic chemical vapor deposition equipment etc.,
Then, in 12 surface deposition sound barrier layer structure of buffer thin film layer, in setting 13 structure of Prague acoustic resistance barrier, according to design
Demand obtains the thickness of each layer film in Prague acoustic resistance barrier 13, by high acoustic impedance materials layer 131- layer of low acoustic impedance material
132- ...-high acoustic impedance materials layer 131- layer of low acoustic impedance material 132 (such as Fig. 3) or layer of low acoustic impedance material 132-
High acoustic impedance materials layer 131- ...-layer of low acoustic impedance material 132- high acoustic impedance materials layer 131 is deposited in order in metal
On structure member surface (such as Fig. 4), the preparation method of acoustic impedance layer structure can be magnetron sputtering deposition, pulsed laser deposition, electricity
Then beamlet evaporation, metal-organic chemical vapor deposition equipment etc. deposit high performance piezoelectric film on acoustic impedance layer, and on it
The electrode structure 142 for preparing surface acoustic wave sensor 14 reaches what surface acoustic wave sensor 14 was integrated with hardware without glue
Purpose.
It should be noted that each embodiment in this specification is described in a progressive manner, each embodiment weight
Point explanation is all difference from other examples, and the same or similar parts between the embodiments can be referred to each other.
The above descriptions are merely preferred embodiments of the present invention, is not intended to limit the utility model, for this
For the technical staff in field, various modifications and changes may be made to the present invention.It is all in the spirit and principles of the utility model
Within, any modification, equivalent replacement, improvement and so on should be included within the scope of protection of this utility model.
Claims (10)
1. a kind of detection device, which is characterized in that including：
Metallic structural components to be tested；
The acoustic resistance barrier being set on the metallic structural components to be tested；
The surface acoustic wave sensor being set in the acoustic resistance barrier is tested to the metallic structural components to be tested
When, the surface acoustic wave that the acoustic resistance barrier makes the surface acoustic wave sensor generate acts on the metallic structural components to be tested
Surface.
2. detection device according to claim 1, which is characterized in that further include：
The buffer thin film layer being set on the metallic structural components to be tested, the acoustic resistance barrier are set to the buffer thin film
On layer.
3. detection device according to claim 1 or 2, which is characterized in that the acoustic resistance barrier is Prague acoustic resistance barrier.
4. detection device according to claim 3, which is characterized in that Prague acoustic resistance barrier includes：According to the period
The spaced high acoustic impedance materials layer of property and layer of low acoustic impedance material, wherein direct with the metallic structural components to be tested
Contact is high acoustic impedance materials layer.
5. detection device according to claim 3, which is characterized in that Prague acoustic resistance barrier includes：According to the period
The spaced high acoustic impedance materials layer of property and layer of low acoustic impedance material, wherein direct with the metallic structural components to be tested
Contact is layer of low acoustic impedance material.
6. detection device according to claim 4 or 5, which is characterized in that the numerical value in the period is any in 1-10
Integer.
7. detection device according to claim 6, which is characterized in that the numerical value in the period is 5.
8. detection device according to claim 1, which is characterized in that the surface acoustic wave sensor includes：
The piezoelectric thin film layer being set in the acoustic resistance barrier, and the electrode structure that is prepared on the piezoelectric thin film layer.
9. detection device according to claim 1, which is characterized in that the surface acoustic wave sensor is single port resonance
Device, two-port resonators, single port delay line or dual-port delay-line structure.
10. detection device according to claim 2, which is characterized in that the buffer thin film layer is oxide or nitride
Film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820668170.0U CN208043748U (en) | 2018-05-04 | 2018-05-04 | A kind of detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820668170.0U CN208043748U (en) | 2018-05-04 | 2018-05-04 | A kind of detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208043748U true CN208043748U (en) | 2018-11-02 |
Family
ID=63928701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820668170.0U Expired - Fee Related CN208043748U (en) | 2018-05-04 | 2018-05-04 | A kind of detection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208043748U (en) |
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2018
- 2018-05-04 CN CN201820668170.0U patent/CN208043748U/en not_active Expired - Fee Related
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Granted publication date: 20181102 Termination date: 20200504 |