CN208014557U - A kind of ultracapacitor - Google Patents
A kind of ultracapacitor Download PDFInfo
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- CN208014557U CN208014557U CN201820358005.5U CN201820358005U CN208014557U CN 208014557 U CN208014557 U CN 208014557U CN 201820358005 U CN201820358005 U CN 201820358005U CN 208014557 U CN208014557 U CN 208014557U
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- ultracapacitor
- boron
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- doped diamond
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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Abstract
The utility model provides a kind of ultracapacitor, including anode, cathode and the diaphragm and electrolyte being set between the anode and the cathode, the just extremely nitrogen co-doped diamond electrode of boron, the nitrogen co-doped diamond electrode of boron includes electrode matrix and the nitrogen co-doped diamond layer of boron in the electrode matrix close to one side surface of diaphragm is arranged, and the nitrogen co-doped diamond layer of boron includes the flat configuration layer for being set to the electrode matrix surface and the array bulge-structure for being set to the flat configuration layer surface.Using the nitrogen co-doped diamond of boron as electrode material, the degrees and job stability of ultracapacitor can be improved；And electrode specific surface area can be improved in array bulge-structure, increases the energy storage density and energy storage efficiency of ultracapacitor.
Description
Technical field
The utility model is related to battery technology fields, more particularly to a kind of ultracapacitor.
Background technology
Ultracapacitor is a kind of novel energy storage apparatus between traditional capacitor and rechargeable battery, is called and does double electricity
Layer capacitor, the electric double layer storage energy formed by the ion in positive and negative electrode and electrolyte.Its capacity up to hundreds of to
Thousands of methods.Compared with traditional capacitor, it has larger capacity, than energy or energy force density, wider operating temperature range
Extremely long service life；And compared with accumulator, it has higher specific power again, and environmentally safe.Super capacitor
Device is widely used in the electronic product for having memory storage function, intelligent grid, new-energy automobile, wind-force and solar power generation system
System.
In ultracapacitor, electrode material is core component, determines the overall performance of ultracapacitor.According to
Electrode material, it is super that ultracapacitor can be divided into carbon material ultracapacitor, metal oxide ultracapacitor, conducting polymer
Capacitor and mixing material system ultracapacitor.Traditional carbon material such as activated carbon raw material is abundant, specific surface area is high and cost compared with
It is low, but specific surface area utilization rate is low.Carbon nanotube has high conductivity and specific capacitance, but specific surface area is relatively low.Carbon airsetting
Glue has high specific surface area, and light, good conductivity, mesoporous are flourishing, but preparation process complexity and somewhat expensive.Graphene material
Material is with high-specific surface area, good electric conductivity, but its technology of preparing is not yet ripe at present, it is difficult to realize commercialization.In addition,
The also appearance of metal oxide/hydroxide and conducting polymer as the electrode material of ultracapacitor, but it is higher
Cost, poor job stability, acid and alkali-resistance etc. does not all limit the development of these electrode materials, and it is also system that energy density is low
An about most important factor of supercapacitor applications, therefore it provides a kind of energy storage density is high, resistance to acid and alkali is good, work is steady
Qualitative good electrode is very necessary for ultracapacitor.
Utility model content
In view of this, the utility model provides a kind of ultracapacitor, wherein being used when anode or positive and negative electrodes in same has
The nitrogen co-doped diamond electrode of boron of array bulge-structure.Using the nitrogen co-doped diamond of boron as electrode material, improve super
The degrees and job stability of capacitor；Array bulge-structure improves electrode specific surface area, increases ultracapacitor
Energy storage density and energy storage efficiency.
In a first aspect, the utility model provides a kind of ultracapacitor, including anode, cathode and be set to it is described just
Diaphragm between pole and the cathode and electrolyte, described just extremely the nitrogen co-doped diamond electrode of boron, the boron are nitrogen co-doped
Diamond electrode includes electrode matrix and is arranged the nitrogen co-doped Buddha's warrior attendant of boron in the electrode matrix close to one side surface of diaphragm
Rock layers, the nitrogen co-doped diamond layer of boron include being set to the flat configuration layer on the electrode matrix surface and being set to described
The array bulge-structure of flat configuration layer surface.
Optionally, the cathode is the nitrogen co-doped diamond electrode of the boron.The nitrogen co-doped diamond electrode packet of boron
It includes electrode matrix and the nitrogen co-doped diamond layer of boron in the electrode matrix close to one side surface of diaphragm, the boron nitrogen is set
Co-doped diamond layer includes being set to the flat configuration layer on the electrode matrix surface and being set to the flat configuration layer table
The array bulge-structure in face.In the present invention, the cathode may be conventional selection, specifically, the cathode can be with
But it is not limited to metal electrode, graphite electrode.
Optionally, the array bulge-structure is vertically installed on the flat configuration layer.
Optionally, the shape of the array bulge-structure is prism, pyramid or circular cone.
Optionally, the shape of the array bulge-structure is pyramid or circular cone, and pyramid or the coniform array are raised
The top radius of curvature of structure is 1nm-30nm.Further, the top radius of curvature be 2nm-26nm, 5nm-23nm or
10nm-18nm。
Optionally, the draw ratio of the array bulge-structure is 20-80, tip diameter 50nm-200nm, base diameter
For 100nm-1000nm.Further, the draw ratio of the array bulge-structure be 25-65, tip diameter 80nm-170nm,
Base diameter is 350nm-650nm.
Optionally, the arrangement density of the array bulge-structure is 104cm-2-109cm-2.Further, the array is convex
The arrangement density for playing structure is 107cm-2-109cm-2。
Optionally, the thickness of the flat configuration layer is 100nm-5 μm, and the height of the array bulge-structure is 50nm-5
μm.Further, the thickness of the flat configuration layer is 200nm-4 μm or 500nm-3 μm, the height of the array bulge-structure
It is 100nm-4 μm, 500nm-3 μm or 1 μm -2 μm.
Optionally, the electrode matrix is titanium, tantalum, niobium, molybdenum, chromium, lead, nickel, copper, silicon, graphite, carbon fiber substrate or hard
Alloy substrate.The copper-clad includes foam copper, copper coin or copper mesh.Specifically, the material of the electrode matrix can be, but not limited to for
Foam copper, carbon fiber or hard alloy.
Optionally, the diaphragm is that porous polyethylene membrane, porous polypropylene film, glass fiber membrane or porous ceramics are thin
Film.
Optionally, the electrolyte includes electrolyte liquid, Electrolyte Gel, solid electrolyte or solid polymer.Tool
Body, the electrolyte can be, but not limited to as aqueous sulfuric acid, sodium-chloride water solution, sodium nitrate aqueous solution and lithium perchlorate
Carbonic allyl ester solution.
The utility model provides a kind of ultracapacitor, wherein using with array protrusion when anode or positive and negative electrodes in same
The nitrogen co-doped diamond electrode of boron of structure improves degrees and job stability, while boron nitrogen codope can
To significantly improve the conductivity and crystal quality of diamond thin.The protective underlayer of flat configuration matrix, prevents body portion
Exposure, improves the electric conductivity of electrode；The surface layer of array bulge-structure increases the specific surface area of the nitrogen co-doped diamond layer of boron,
To further increase active site, ultracapacitor working efficiency is greatly improved.By adjusting bulge-structure
Density of arranging and size, and then the hydrophily and hydrophobicity of the nitrogen co-doped diamond layer of boron can be adjusted, it further influences super
The working efficiency of capacitor.
The advantages of the utility model, will partly illustrate in the following description, and a part is aobvious and easy according to specification
See, or can be known by the implementation of the utility model embodiment.
Description of the drawings
Fig. 1 is the structure of the nitrogen co-doped diamond electrode of boron in a kind of ultracapacitor that the utility model embodiment provides
Schematic diagram；
Fig. 2 is the nitrogen co-doped diamond electrode of boron in a kind of ultracapacitor that another embodiment of the utility model provides
Structural schematic diagram；
Fig. 3 is a kind of structural schematic diagram for ultracapacitor that the utility model embodiment provides.
Specific implementation mode
As described below is the preferred embodiment of the utility model embodiment, it is noted that for the general of the art
For logical technical staff, under the premise of not departing from the utility model embodiment principle, several improvements and modifications can also be made,
These improvements and modifications are also considered as the protection domain of the utility model embodiment.
The utility model implementation provides a kind of ultracapacitor, including anode, cathode and be set to the anode and
Diaphragm between the cathode and electrolyte, the just extremely nitrogen co-doped diamond electrode of boron, the nitrogen co-doped Buddha's warrior attendant of boron
Stone electrode includes electrode matrix and is arranged the nitrogen co-doped diamond layer of boron in the electrode matrix close to one side surface of diaphragm,
The nitrogen co-doped diamond layer of boron includes being set to the flat configuration layer on the electrode matrix surface and being set to described smooth
The array bulge-structure of structure layer surface.
It please refers to Fig.1 and Fig. 2, implements the nitrogen co-doped diamond electricity of the boron in the ultracapacitor provided for the utility model
Pole structural schematic diagram.In the present invention, the nitrogen co-doped diamond electrode of the boron includes that electrode matrix 10 and setting exist
The nitrogen co-doped diamond layer of boron on 10 surface of the electrode matrix, the nitrogen co-doped diamond layer of boron include being set to the electricity
The flat configuration layer 21 on 10 surface of pole matrix and the array bulge-structure 22 for being set to 21 surface of flat configuration layer.In this reality
In novel, the array bulge-structure 22 is vertically installed on the flat configuration layer 21, the array bulge-structure 22 that
This interval is arranged.Array bulge-structure 22 is so that electronics is easy to that, in particle surface transmission, the diffusional resistance of particle fraction can be reduced
And distance, increase its electro-catalysis ability so that the specific surface area of the nitrogen co-doped diamond layer of boron further increases, energy storage
Density and efficiency are further promoted.In the present invention, the shape of the array bulge-structure 22 be prism (Fig. 1),
Pyramid or circular cone (Fig. 2).In the present invention, referring to Fig. 2, the shape of the array bulge-structure 22 is pyramid or circle
Cone, having cuspidated array protrusion can play the role of converging electronics, and the transmission of electronics is made to be easier to carry out with circulation.This reality
With in novel preferred embodiment, when the shape of the array bulge-structure 22 is pyramid or circular cone, the top of pyramid or circular cone
It is not a point to hold (one end of array bulge-structure 22 far from flat configuration layer 21), but has certain radius of curvature,
The tip benefit and electric-field enhancing that top generates generate wholesome effect to the catalytic performance of electrode.Preferably, pyramid or circular cone
The top radius of curvature of the array bulge-structure 22 of shape is 1nm-30nm, further, pyramid or the coniform battle array
The top radius of curvature of row bulge-structure 22 is 2nm-26nm, 5nm-23nm or 10nm-18nm.In the present invention, described
The draw ratio of array bulge-structure 22 is 20-80, tip diameter 50nm-200nm, base diameter 100nm-1000nm, row
Cloth density is 104cm-2-109cm-2.Further, the draw ratio of the array bulge-structure 22 is 25-65, and tip diameter is
80nm-170nm, base diameter 350nm-650nm, arrangement density are 107cm-2-109cm-2.Preferably, top is monocrystalline gold
Hard rock structure makes electrode have broader electrochemical window and lower hydrogen-evolution overpotential.In the present invention, the smooth knot
The thickness of structure layer 21 is 100nm-5 μm, and the height of the array bulge-structure 22 is 50nm-5 μm.Further, described smooth
The thickness of structure sheaf 21 is 200nm-4 μm or 500nm-3 μm, the height of the array bulge-structure 22 is 100nm-4 μm,
500nm-3 μm or 1 μm -2 μm.In the present invention, the electrode matrix 10 be titanium, tantalum, niobium, molybdenum, chromium, lead, nickel, copper, silicon,
Graphite, carbon fiber substrate or hard alloy substrate.
In the present invention, further using the nitrogen co-doped diamond electrode of the boron as the cathode.I.e. anode and
Cathode is all made of the nitrogen co-doped diamond electrode of the boron.When anode and cathode are that the boron nitrogen with array bulge-structure is co-doped with
When miscellaneous diamond electrode, the energy storage density and energy storage efficiency of ultracapacitor greatly reinforce.6 are please referred to, is that the utility model is real
A kind of ultracapacitor of offer, including anode 30, cathode 40, electrolyte 50 and diaphragm 60 are applied, wherein anode 30 and cathode 40
Be all made of the nitrogen co-doped diamond electrode of boron, the array bulge-structure in anode 30 and cathode 40 be located at electrode matrix and diaphragm it
Between.In the present invention, the ultracapacitor may be stepped construction, is not construed as limiting to this.In the present invention,
The cathode may be conventional selection, specifically, the cathode can be, but not limited to as metal electrode, graphite electrode.Electrolysis
Liquid carries out metal ion conduction between positive electrode and negative electrode and between positive electrode and negative electrode.The material of the diaphragm includes more
Hole polyethylene film, porous polypropylene film, glass fiber membrane or porous ceramic film.Electrolyte is not particularly limited, electricity
Solution liquid liquid, Electrolyte Gel, solid electrolyte or solid polymer can be used as electrolyte.The ultracapacitor usually has
For accommodating anode, cathode, electrolyte and the shell of diaphragm.
Service life of the ultracapacitor provided by the utility model under more rugged environment is higher, wherein anode or
Using the nitrogen co-doped diamond electrode of boron with array bulge-structure when positive and negative electrodes in same, have than traditional electrode material wider
Potential window, better electro catalytic activity and physical and chemical stability；Boron nitrogen codope can significantly improve diamond
The conductivity and crystal quality of film, flat configuration layer protect matrix, prevent body portion from exposing, and improve the conduction of electrode
Property；Array bulge-structure increases the specific surface area of the nitrogen co-doped diamond layer of boron, to further increase active site, surpasses
Grade capacitor working efficiency is greatly improved；The surface layer of array bulge-structure has higher liberation of hydrogen and analysis oxygen point position, leads to
The arrangement density and size of the bulge-structure are overregulated, and then the hydrophily of the nitrogen co-doped diamond layer of boron can be adjusted and dredged
It is aqueous, further influence the working efficiency of ultracapacitor.
The above-mentioned ultracapacitor of the utility model can be used under type such as and prepare：
Electrode matrix is provided, the electrode matrix is subjected to blasting treatment and is cleaned；The electrode matrix after cleaning
Upper deposition forms the nitrogen co-doped diamond layer of initial boron；The surface layer of the nitrogen co-doped diamond layer of the initial boron is performed etching into shape
At array bulge-structure, the nitrogen co-doped diamond layer of boron is obtained to get to the nitrogen co-doped diamond electrode of boron, the boron nitrogen is co-doped with
Miscellaneous diamond electrode includes electrode matrix and is arranged the nitrogen co-doped diamond layer of boron on the electrode matrix surface, the boron
Nitrogen co-doped diamond layer includes being set to the flat configuration layer on the electrode matrix surface and being set to the flat configuration layer
The array bulge-structure on surface；
Electrolyte, diaphragm and cathode are provided, the nitrogen co-doped diamond electrode of boron is as anode, by the anode, institute
It states electrolyte, the diaphragm and the cathode to be packed into super capacitor shell, encapsulation forms ultracapacitor, wherein described
Array bulge-structure is between the flat configuration layer and the diaphragm.
Optionally, further using the nitrogen co-doped diamond electrode of the boron as the cathode.That is positive and negative
Pole uses the nitrogen co-doped diamond electrode of the boron simultaneously.
The utility model will be further detailed with multiple specific embodiments below.
Embodiment 1
A kind of preparation method of ultracapacitor, includes the following steps：
Step 1：Blasting treatment is carried out to foam Copper substrate, is respectively cleaned by ultrasonic matrix in acetone and alcohol
20min, it is 1 to be subsequently placed in volume ratio:1:20min in the alkaline solution of 5 hydrogen peroxide, ammonium hydroxide and water removes Surface Oxygen
Compound, and cause certain defect so as to deposition later, then be placed in deionized water and be cleaned by ultrasonic 20min.It then will be after cleaning
Foam Copper substrate is placed in the nano-diamond powder suspension that grain size is 4nm and is ultrasonically treated 1h, exists with most discrete form, Zeta
Current potential about ± 50mV.
Step 2：Using the nitrogen co-doped Buddha's warrior attendant of foam copper substrate deposit boron of hot filament CVD after cleaning
Pretreated foam copper is placed on base station by rock layers in preparation process, keeps substrate among heated filament and parallel with heated filament,
The spacing of heated filament and substrate surface is 8mm.Base vacuum is taken out to 0.1Pa hereinafter, the gas being passed through includes methane, trimethyl borine
And hydrogen.Using tantalum wire as heated filament, the quantity of heated filament is 9, a diameter of 0.5mm of heated filament.Heated filament is at a distance from matrix
7.5mm, CH4/H2/ TMB flows be 24sccm/752sccm/24sccm, deposition pressure 5000Pa, heater power 7100W,
The temperature of foam Copper substrate is 800 DEG C, sedimentation time 5h.Obtaining surface has the foam of the nitrogen co-doped diamond layer of initial boron
The thickness of the nitrogen co-doped diamond layer of Copper substrate, wherein boron is 3 μm.
Step 3：It is nitrogen co-doped to initial boron using electron cyclotron resonance microwave plasmas chemical vapor deposition etching method
Diamond layer performs etching, and in etching process, is evacuated to 5Pa hereinafter, then passing to hydrogen to 6mTorr, it is micro- to open ECR
Wave Plasma mode, specific etching parameters are as follows：CH4/H2Flow-rate ratio：1.5%/98.5%, total gas couette：20sccm is carved
Erosion pressure is 6mTorr, and the DC negative bias voltage loaded on substrate of substrate stage is 100V, and etching bias current is 50mA, etch period 2.5h,
So that the nitrogen co-doped diamond layer etching of initial boron is bottom and surface layer, and surface layer is made to be array bulge-structure, it is total to obtain boron nitrogen
Doped diamond electrode, wherein remaining BDD layers are 500nm, the shape of array bulge-structure is coniform, array bulge-structure
Height be 2.5 μm, tip diameter 50nm, base diameter 125nm, arrangement density be 109cm-2。
Step 4：The sulfuric acid of selection 25%-30% is as electrolyte, polyvinyl chloride non-woven fabrics as diaphragm, graphite rod conduct
Anode, electrolyte, diaphragm and cathode are packed into shell by cathode using the nitrogen co-doped diamond electrode of boron obtained above as anode
In vivo, encapsulation forms ultracapacitor.
Embodiment 2
A kind of preparation method of ultracapacitor, includes the following steps：
Step 1：Carbon fiber substrate is taken, matrix is cleaned by ultrasonic 20min, deionized water ultrasound in acetone and alcohol respectively
Clean 20min.Then the carbon fiber substrate after cleaning is placed in the nano-diamond powder suspension that average grain diameter is 10nm and is surpassed
Sonication 1h exists, Zeta potential about ± 30mV with most discrete form.
Step 2：Select hot-wire chemical gas-phase deposition method nitrogen co-doped gold of boron in pretreated carbon fiber substrate
Hard rock layer.It will carry out pretreated carbon fiber substrate to be placed on base station, and kept substrate among heated filament and flat with heated filament
Row.Base vacuum is taken out to 0.1Pa hereinafter, then pass to reaction gas, carbon source of the methane as diamond deposition, trimethyl borine
(TMB) the boron doping gas as BDD depositions, wherein the TMB used is the mixed gas of TMB and hydrogen, TMB is dense in gaseous mixture
Degree is 0.1%.Deposition pressure is adjusted, diamond thin forming core and growth are started.HFCVD deposits the design parameter of BND films
It is as follows：The tantalum wire of 9 a diameter of 0.5mm of heated filament, the spacing with sample surfaces are 10mm, CH4/H2/ TMB flows are 24sccm/
752sccm/24sccm, heater power 6900W, silicon base temperature are 750 DEG C, air pressure 4000Pa, sedimentation time 2h.
Obtaining surface has the carbon fiber substrate of the nitrogen co-doped diamond layer of initial boron, the wherein thickness of the nitrogen co-doped diamond layer of initial boron
Degree is 1 μm.
Step 3：The nitrogen co-doped diamond layer of initial boron is performed etching using sense coupling method, is being carved
During erosion, carbon tetrafluoride is passed through as reaction gas, the flow of carbon tetrafluoride is 50sccm, and etching air pressure is 0.5Pa, power supply
Power is 2200W, and etching power is 160W, etch period 1h.So that the nitrogen co-doped diamond layer etching of initial boron is bottom
And surface layer, and surface layer is made to be array bulge-structure, obtain the nitrogen co-doped diamond electrode of boron, the wherein shape of array bulge-structure
It is highly 50nm for prism-shaped, arrangement density is 108cm-2。
Step 4：Select 1mol/L sodium-chloride water solutions to be used as diaphragm as electrolyte, polyvinyl chloride non-woven fabrics, it is positive with
Cathode is all made of with the above-mentioned nitrogen co-doped diamond electrode of the boron being prepared, and anode, electrolyte, diaphragm and cathode are packed into shell
In vivo, encapsulation forms ultracapacitor.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of ultracapacitor, which is characterized in that including anode, cathode and be set between the anode and the cathode
Diaphragm and electrolyte, the just extremely nitrogen co-doped diamond electrode of boron, the nitrogen co-doped diamond electrode of boron includes electricity
Pole matrix and the nitrogen co-doped diamond layer of boron in the electrode matrix close to one side surface of diaphragm is set, the boron nitrogen is co-doped with
Miscellaneous diamond layer includes being set to the flat configuration layer on the electrode matrix surface and being set to the flat configuration layer surface
Array bulge-structure.
2. ultracapacitor as described in claim 1, which is characterized in that the cathode is the nitrogen co-doped diamond electricity of the boron
Pole.
3. ultracapacitor as claimed in claim 1 or 2, which is characterized in that the array bulge-structure is vertically installed in institute
It states on flat configuration layer.
4. ultracapacitor as claimed in claim 1 or 2, which is characterized in that the shape of the array bulge-structure be prism,
Pyramid or circular cone.
5. ultracapacitor as claimed in claim 4, which is characterized in that the shape of the array bulge-structure is pyramid or circle
The top radius of curvature of cone, pyramid or the coniform array bulge-structure is 1nm-30nm.
6. ultracapacitor as claimed in claim 5, which is characterized in that the draw ratio of the array bulge-structure is 20-80,
Tip diameter is 50nm-200nm, base diameter 100nm-1000nm.
7. ultracapacitor as claimed in claim 5, which is characterized in that the arrangement density of the array bulge-structure is
104cm-2-109cm-2。
8. ultracapacitor as claimed in claim 1 or 2, which is characterized in that the thickness of the flat configuration layer is 100nm-5
μm, the height of the array bulge-structure is 50nm-5 μm.
9. ultracapacitor as claimed in claim 1 or 2, which is characterized in that the electrode matrix be titanium, tantalum, niobium, molybdenum, chromium,
Lead, nickel, copper, silicon, graphite, carbon fiber substrate or hard alloy substrate.
10. ultracapacitor as described in claim 1, which is characterized in that the diaphragm is porous polyethylene membrane, porous poly- third
Alkene film, glass fiber membrane or porous ceramic film.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110086377A (en) * | 2019-05-29 | 2019-08-02 | 厦门大学 | Single electrode generator and its electricity-generating method based on electric double layer in solution |
| CN110277251A (en) * | 2018-03-15 | 2019-09-24 | 深圳先进技术研究院 | A kind of supercapacitor and preparation method thereof |
| CN110565067A (en) * | 2019-09-25 | 2019-12-13 | 郑州华晶新能源科技有限公司 | Metallized diamond nano composite plating film and preparation method thereof |
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2018
- 2018-03-15 CN CN201820358005.5U patent/CN208014557U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277251A (en) * | 2018-03-15 | 2019-09-24 | 深圳先进技术研究院 | A kind of supercapacitor and preparation method thereof |
| CN110086377A (en) * | 2019-05-29 | 2019-08-02 | 厦门大学 | Single electrode generator and its electricity-generating method based on electric double layer in solution |
| CN110086377B (en) * | 2019-05-29 | 2020-05-29 | 厦门大学 | Single-electrode generator based on double-charge layer in solution and power generation method thereof |
| CN110565067A (en) * | 2019-09-25 | 2019-12-13 | 郑州华晶新能源科技有限公司 | Metallized diamond nano composite plating film and preparation method thereof |
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