CN106971864A - A kind of preparation method of the ultracapacitor based on nanoporous boron-doped diamond electrode - Google Patents
A kind of preparation method of the ultracapacitor based on nanoporous boron-doped diamond electrode Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 63
- 239000010432 diamond Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 238000004088 simulation Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 14
- 238000004146 energy storage Methods 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 11
- 239000003792 electrolyte Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000011435 rock Substances 0.000 description 5
- 239000003575 carbonaceous material Substances 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 239000007832 Na2SO4 Substances 0.000 description 3
- 229910000162 sodium phosphate Inorganic materials 0.000 description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 description 3
- 238000010408 sweeping Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
A kind of preparation method of the ultracapacitor based on nanoporous boron-doped diamond electrode.Method is：Boron-doped diamond film is deposited on substrate using Hot Filament Chemical Vapor's method；One layer of discontinuous polycrystalline Ni is deposited on boron-doped diamond film；The Boron-doped diamond surface for plating Ni is etched into loose structure by using plasma.Porous boron-doped diamond film as super capacitor electrode, on the one hand, diamond has highest hardness and thermal conductivity, and strong acid-base resistance, chemical stability is good, can be used for its ultracapacitor prepared in the rugged environments such as high temperature, high pressure and strong acid and strong base, and have extended cycle life；On the other hand, loose structure increases the specific surface area of electrode, improves the energy storage density of ultracapacitor.
Description
Technical field
The present invention relates to a kind of ultracapacitor, more particularly, to a kind of ultracapacitor based on porous boron-doped diamond
Preparation method.
Background technology
Ultracapacitor is also electrochemical capacitor, and ultracapacitor is as a kind of emerging between traditional capacitor and electricity
The energy storage device of pond therebetween, has that power density is high and the big advantage of energy density concurrently, while having, charge-discharge velocity is fast, work
Make that temperature range is wide, cycle life up to more than ten thousand times the features such as, therefore be widely used in new-energy automobile, the electronics production of expense property
In terms of product, communication system, data-storage system, computer.
Ultracapacitor can be divided into two kinds of double layer capacitor and Faraday Type capacitor (also referred to as pseudocapacitors), super
In level capacitor, electrode material is crucial, and it determines the performance indications of whole device.Conventional electrode material has carbon material,
Conducting polymer and metal oxide materials.Carbon material is due to good electrical and mechanical performance, corrosion resistance, chemistry
And many advantages such as high-temperature stability, it is one of preferable electrode material of ultracapacitor, CNT and graphene are recent
The two kinds of carbon materials received much attention.Diamond is as a kind of special carbon material, with many excellent performances, in all material
In, diamond has highest hardness and thermal conductivity, and strong acid-base resistance, and chemical stability is good, and boron-doping Buddha's warrior attendant prepared by CVD
Stone film has good electric conductivity, therefore, and boron-doped diamond can be used as the electrode material of ultracapacitor, and available for extreme
In rugged environment.But, relevant boron-doped diamond is used for the report of electrode of super capacitor seldom, and main cause is boron-doping gold
The specific surface area of hard rock is small, and ultracapacitor is prepared with it, and energy storage density is low.
The content of the invention
It is an object of the present invention to provide a kind of ultracapacitor based on nanoporous boron-doped diamond electrode.
The present invention prepares ultracapacitor using porous boron-doped diamond as electrode material, in boron-doped diamond electrode table
Face etches a large amount of nano-pores, can effectively increase its specific surface area, so as to improve the storage density of capacitor.The super capacitor
Utensil has higher energy storage density, and good cycling stability, can be used for the exceedingly odious environment such as high temperature, strong acid-base
In.
Technical scheme
A kind of preparation method of the ultracapacitor based on nanoporous boron-doped diamond electrode, it is main including following several
Step：
Step 1, boron-doped diamond film deposited on substrate using Hot Filament Chemical Vapor's method, substrate is positioned over Buddha's warrior attendant first
In stone flour and acetone soln mixture, then ultrasonic grinding is cleaned by ultrasonic in deionized water, and settling chamber is put into after nitrogen drying
The growth of boron-doped diamond being carried out, bias current is 10A in growth course, bias voltage is 200V, carbon source flow is 5~
7sccm, H2200~400sccm of flow, chamber pressure about 20~50Torr, substrate surface temperature is about 900~1100 DEG C.Prepare
The doping concentration of boron is 0.1%~3% (atomic percent) in diamond film, and crystallite dimension is 3~5 μm, and thickness is 50~200
μm。
The substrate can be Si, Ta or Mo.
Step 2, the deposition discontinuous polycrystalline Ni of a thin layer on boron-doped diamond, the size of Ni crystal grain is 5~50nm.Ni
Preparation method can use magnetron sputtering method, can also use vapour deposition method or galvanoplastic.
The Boron-doped diamond surface for plating Ni is etched into loose structure by step 3, using plasma, will plate Ni boron-doping gold
Hard rock is put into DC arc plasma jet CVD device, is evacuated to background vacuum less than 100Pa, is passed through H2And Ar, gas
Flow is 1.0~5.0slpm and 1.0~6.0slpm respectively, and holding chamber pressure is 3000~5000Pa, arc voltage is 110~
120V, arc current is 80~100A, and etch period is a diameter of 50~200nm of nano-pore after 1~30min, etching.
Step 4, using the porous boron-doped diamond of above-mentioned preparation as electrode, platinized platinum is as to electrode, saturated calomel electrode
Simulation ultracapacitor is assembled into as reference electrode, electrochemical property test investigation is carried out in the electrolytic solution.
Advantages and positive effects of the present invention：
Porous boron-doped diamond film as super capacitor electrode, on the one hand, diamond has highest hardness and thermal conductivity
Rate, and strong acid-base resistance, chemical stability are good, can be used for high temperature, high pressure and strong acid and strong base etc. with its ultracapacitor prepared
In rugged environment, and have extended cycle life；On the other hand, loose structure increases the specific surface area of electrode, improves super electricity
The energy storage density of container.
Brief description of the drawings
Fig. 1 is the surface (a) of porous boron-doped diamond and SEM (SEM) figure of section (b).
Fig. 2 is the cyclic voltammogram (a) and constant current charge-discharge for not etching boron-doped diamond and porous boron-doped diamond electrode
Scheme (b).Fig. 3 is specific capacitance, and with the conversion curve and corresponding cyclic voltammetry curve of cycle-index, (cycle-index is 10000
It is secondary).
Embodiment
It will be further clarified by the following substantive distinguishing features and the marked improvement of the present invention, but the present invention only office absolutely not
It is limited to embodiment.
Embodiment 1：
Step 1, Hot Filament Chemical Vapor's method is used to deposit boron-doped diamond film on substrate (can be Si, Ta or Mo),
Substrate is positioned over bortz powder with acetone soln mixture (bortz powder concentration about 1mg/L, and well mixed), surpassing first
Sound grinds 60min, and 15min is cleaned by ultrasonic in deionized water, the life that settling chamber carries out boron-doped diamond is put into after nitrogen drying
Long, bias current is 10A in growth course, and bias voltage is 200V, and carbon source flow is 6sccm, H2Flow 300sccm, chamber pressure
30Torr, substrate surface temperature is about 1000 DEG C.The doping concentration of boron is 0.12% (atomic percent in the diamond film of preparation
Than), crystallite dimension is 3~5 μm, and thickness is 160 μm.
Step 2, the discontinuous polycrystalline Ni of a thin layer is deposited on boron-doped diamond using galvanoplastic, the size of Ni crystal grain is
5~50nm.Using bipolar electrode structure, the distance of two electrodes is 1cm, and two electrodes add square wave, and frequency is 500Hz, and low pressure is 0V,
High pressure is 1.5V, electrolyte by 0.1M NaH2PO4With 2mM Ni (NO3)2Composition.
The Boron-doped diamond surface for plating Ni is etched into loose structure by step 3, using plasma, will plate Ni boron-doping gold
Hard rock is put into DC arc plasma jet CVD device, is evacuated to background vacuum less than 100Pa, is passed through H2And Ar, gas
Flow is 2.0slpm and 4.0slpm respectively, and holding chamber pressure is 3500Pa, and arc voltage is 110V, and arc current is 80A, etch period
For 2min, a diameter of 50~200nm of nano-pore after etching.
Fig. 1 is the porous Boron-doped diamond surface (a) prepared and the scanning electron microscope (SEM) photograph of section (b).
Step 4, using the porous boron-doped diamond of above-mentioned preparation as electrode, platinized platinum is as to electrode, saturated calomel electrode
Simulation ultracapacitor is assembled into as reference electrode, in Na2SO4Electrochemical property test investigation is carried out in electrolyte.Sweeping speed is
The specific capacitance that 5mV/s cyclic voltammetry measures capacitor is 9.55mF/cm2, current density is 25 μ A/cm2Galvanostatic method survey
The specific capacitance obtained is about 8.40mF/cm2, after 10000 cyclic voltammetries, specific capacitance remain at initial 98% with
On.
Fig. 2 is the cyclic voltammogram (a) and constant current using porous boron-doped diamond as the simulation ultracapacitor of electrode
Charge and discharge electrograph (b).As a comparison, giving the boron diamond without loose structure in figure as the simulation super capacitor of electrode
Device measures cyclic voltammogram and constant current charge-discharge diagram under the same conditions.
Fig. 3 is specific capacitance, and with the change curve of cycle-index and corresponding cyclic voltammetry curve, (cycle-index is
10000 times).
Embodiment 2：
Step 1, Hot Filament Chemical Vapor's method is used to deposit boron-doped diamond film on substrate (can be Si, Ta or Mo),
Substrate is positioned over bortz powder with acetone soln mixture (bortz powder concentration about 1mg/L, and well mixed), surpassing first
Sound grinds 60min, and 15min is cleaned by ultrasonic in deionized water, the life that settling chamber carries out boron-doped diamond is put into after nitrogen drying
Long, bias current is 10A in growth course, and bias voltage is 200V, and carbon source flow is 5sccm, H2Flow 200sccm, chamber pressure
20Torr, substrate surface temperature is about 1000 DEG C.The doping concentration of boron is 0.1% (atomic percent in the diamond film of preparation
Than), crystallite dimension is 2~4 μm, and thickness is 50 μm.
Step 2, the discontinuous polycrystalline Ni of a thin layer is deposited on boron-doped diamond using galvanoplastic, the size of Ni crystal grain is
5~50nm.Using bipolar electrode structure, the distance of two electrodes is 1cm, and two electrodes add square wave, and frequency is 500Hz, and low pressure is 0V,
High pressure is 1.5V, electrolyte by 0.1M NaH2PO4With 2mM Ni (NO3)2Composition.
The Boron-doped diamond surface for plating Ni is etched into loose structure by step 3, using plasma, will plate Ni boron-doping gold
Hard rock is put into DC arc plasma jet CVD device, is evacuated to background vacuum less than 100Pa, is passed through H2And Ar, gas
Flow is 1.0slpm and 1.0slpm respectively, and holding chamber pressure is 3000Pa, and arc voltage is 110V, and arc current is 80A, etch period
For 2min, a diameter of 30~150nm of nano-pore after etching.
Step 4, using the porous boron-doped diamond of above-mentioned preparation as electrode, platinized platinum is as to electrode, saturated calomel electrode
Simulation ultracapacitor is assembled into as reference electrode, in Na2SO4Electrochemical property test investigation is carried out in electrolyte.Sweeping speed is
The specific capacitance that 5mV/s cyclic voltammetry measures capacitor is 8.15mF/cm2, current density is 25 μ A/cm2Galvanostatic method survey
The specific capacitance obtained is about 7.52mF/cm2, after 10000 cyclic voltammetries, specific capacitance remain at initial 98% with
On.
Embodiment 3：
Step 1, Hot Filament Chemical Vapor's method is used to deposit boron-doped diamond film on substrate (can be Si, Ta or Mo),
Substrate is positioned over bortz powder with acetone soln mixture (bortz powder concentration about 1mg/L, and well mixed), surpassing first
Sound grinds 60min, and 15min is cleaned by ultrasonic in deionized water, the life that settling chamber carries out boron-doped diamond is put into after nitrogen drying
Long, bias current is 10A in growth course, and bias voltage is 200V, and carbon source flow is 7sccm, H2Flow 400sccm, chamber pressure
50Torr, substrate surface temperature is about 1000 DEG C.The doping concentration of boron is 0.18% (atomic percent in the diamond film of preparation
Than), crystallite dimension is 4~6 μm, and thickness is 200 μm.
Step 2, the discontinuous polycrystalline Ni of a thin layer is deposited on boron-doped diamond using galvanoplastic, the size of Ni crystal grain is
5~50nm.Using bipolar electrode structure, the distance of two electrodes is 1cm, and two electrodes add square wave, and frequency is 500Hz, and low pressure is 0V,
High pressure is 1.5V, electrolyte by 0.1M NaH2PO4With 2mM Ni (NO3)2Composition.
The Boron-doped diamond surface for plating Ni is etched into loose structure by step 3, using plasma, will plate Ni boron-doping gold
Hard rock is put into DC arc plasma jet CVD device, is evacuated to background vacuum less than 100Pa, is passed through H2And Ar, gas
Flow is 5.0slpm and 6.0slpm respectively, and holding chamber pressure is 5000Pa, and arc voltage is 110V, and arc current is 80A, etch period
For 2min, a diameter of 100~250nm of nano-pore after etching.
Step 4, using the porous boron-doped diamond of above-mentioned preparation as electrode, platinized platinum is as to electrode, saturated calomel electrode
Simulation ultracapacitor is assembled into as reference electrode, in Na2SO4Electrochemical property test investigation is carried out in electrolyte.Sweeping speed is
The specific capacitance that 5mV/s cyclic voltammetry measures capacitor is 8.46mF/cm2, current density is 25 μ A/cm2Galvanostatic method survey
The specific capacitance obtained is about 8.21mF/cm2, after 10000 cyclic voltammetries, specific capacitance remain at initial 98% with
On.
Claims (5)
1. a kind of preparation method of the ultracapacitor based on nanoporous boron-doped diamond electrode, it is characterised in that including as follows
Several steps：
Step 1, boron-doped diamond film deposited on substrate using Hot Filament Chemical Vapor's method；
Step 2, one layer of discontinuous polycrystalline Ni of deposition on boron-doped diamond film, the size of Ni crystal grain is 5~50nm；
The Boron-doped diamond surface for plating Ni is etched into loose structure by step 3, using plasma；
Step 4, the porous boron-doped diamond for preparing step 3 are as electrode, and platinized platinum is as to electrode, saturated calomel electrode conduct
Reference electrode is assembled into simulation ultracapacitor.
2. the preparation method of the ultracapacitor according to claim 1 based on nanoporous boron-doped diamond electrode, its
Being characterised by the preparation method of boron-doped diamond film described in step 1 is, substrate is positioned over into bortz powder and acetone soln first
In mixture, then ultrasonic grinding is cleaned by ultrasonic in deionized water, and being put into settling chamber after nitrogen drying carries out boron-doped diamond
Growth, bias current is 10A in growth course, and bias voltage is 200V, and carbon source flow is 5~7sccm, H2Flow 200~
400sccm, chamber pressure about 20~50Torr, substrate surface temperature are 900~1100 DEG C；The original of boron in the boron-doped diamond film of preparation
Sub- percentage doping concentration is 0.1%~3%, and crystallite dimension is 3~5 μm, and thickness is 50~200 μm.
3. the preparation method of the ultracapacitor according to claim 1 based on nanoporous boron-doped diamond electrode, its
It is Si, Ta or Mo to be characterised by the substrate.
4. the preparation method of the ultracapacitor according to claim 1 based on nanoporous boron-doped diamond electrode, its
It is characterised by that the preparation method of the polycrystalline Ni uses magnetron sputtering method, vapour deposition method or galvanoplastic.
5. the preparation method of the ultracapacitor according to claim 1 based on nanoporous boron-doped diamond electrode, its
The method for being characterised by plating Ni Boron-doped diamond surfaces etching loose structure described in step 3 is to put the boron-doped diamond for plating Ni
Enter in DC arc plasma jet CVD device, be evacuated to background vacuum less than 100Pa, be passed through H2And Ar, gas flow point
It is not 1.0~5.0slpm and 1.0~6.0slpm, holding chamber pressure is 3000~5000Pa, and arc voltage is 110~120V, arc electricity
Flow for 80~100A, etch period is a diameter of 50~200nm of nano-pore after 1~30min, etching.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565124A (en) * | 2018-03-27 | 2018-09-21 | 天津理工大学 | A kind of preparation method of the sodium ion ultracapacitor based on boron-doped graphite alkene/boron-doped diamond compounded electrode |
| CN110277251A (en) * | 2018-03-15 | 2019-09-24 | 深圳先进技术研究院 | A kind of supercapacitor and preparation method thereof |
| CN110407299A (en) * | 2018-04-28 | 2019-11-05 | 深圳先进技术研究院 | A kind of nickel co-doped diamond electrode of porous boron nitrogen and its preparation method and application |
| CN110629203A (en) * | 2019-09-27 | 2019-12-31 | 哈尔滨工业大学 | Preparation method of porous boron-doped diamond composite electrode with bimetal synergistic effect and application of porous boron-doped diamond composite electrode in detection of glucose |
| CN111005010A (en) * | 2019-12-18 | 2020-04-14 | 昆明理工大学 | Preparation method, product and application of nano-diamond metallized film |
| CN111521656A (en) * | 2020-05-11 | 2020-08-11 | 中南大学 | High-sensitivity high-stability boron-doped diamond microelectrode and preparation method and application thereof |
| CN111521657A (en) * | 2020-05-11 | 2020-08-11 | 中南大学 | Dopamine biosensor based on porous boron-doped diamond electrode and preparation method and application thereof |
| CN113088921A (en) * | 2021-04-13 | 2021-07-09 | 昆明理工大学 | Preparation method of porous diamond film/three-dimensional carbon nanowire network composite material and product thereof |
| US11170943B2 (en) | 2020-03-23 | 2021-11-09 | National Taiwan University Of Science And Technology | Supercapacitor electrode, manufacturing method thereof, and supercapacitor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10188951A (en) * | 1996-12-24 | 1998-07-21 | Komatsu Ltd | Electrode plate and manufacture thereof |
| JP2002075473A (en) * | 2000-08-25 | 2002-03-15 | Fuji Photo Film Co Ltd | Photoelectric conversion element and photocell |
| CN102074708A (en) * | 2010-12-14 | 2011-05-25 | 天津理工大学 | Boron-doping diamond film modification-based PEMFC (Proton Exchange Membrane Fuel Cell) bipolar plate and preparation method thereof |
| CN105887038A (en) * | 2016-04-15 | 2016-08-24 | 天津理工大学 | Method for etching boron-doped diamonds |
-
2017
- 2017-04-24 CN CN201710269510.2A patent/CN106971864A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10188951A (en) * | 1996-12-24 | 1998-07-21 | Komatsu Ltd | Electrode plate and manufacture thereof |
| JP2002075473A (en) * | 2000-08-25 | 2002-03-15 | Fuji Photo Film Co Ltd | Photoelectric conversion element and photocell |
| CN102074708A (en) * | 2010-12-14 | 2011-05-25 | 天津理工大学 | Boron-doping diamond film modification-based PEMFC (Proton Exchange Membrane Fuel Cell) bipolar plate and preparation method thereof |
| CN105887038A (en) * | 2016-04-15 | 2016-08-24 | 天津理工大学 | Method for etching boron-doped diamonds |
Non-Patent Citations (2)
| Title |
|---|
| 孙志远 等: "掺硼金刚石薄膜电极电化学特性的研究", 《天津理工大学学报》 * |
| 常明 等: "P型掺杂金刚石电极双电层电容器研究", 《天津理工大学学报》 * |
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