CN208013081U - A kind of device of direct Terahertz non-destructive testing silicon chip transmitance and further detection resistance rate - Google Patents
A kind of device of direct Terahertz non-destructive testing silicon chip transmitance and further detection resistance rate Download PDFInfo
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- CN208013081U CN208013081U CN201721925351.9U CN201721925351U CN208013081U CN 208013081 U CN208013081 U CN 208013081U CN 201721925351 U CN201721925351 U CN 201721925351U CN 208013081 U CN208013081 U CN 208013081U
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Abstract
The device of a kind of direct Terahertz non-destructive testing silicon chip transmitance and further detection resistance rate, is related to Terahertz Technology field.Including terahertz emission source, collimating and beam expanding system, sample stage, terahertz detector, computer, mechanical chuck, piece collection box of doing over again；Terahertz emission source is arranged in bottom, terahertz emission source radiates THz wave vertically upward, the surface in terahertz emission source is arranged in collimating and beam expanding system, the terahertz detector is arranged right over collimating and beam expanding system, have between terahertz detector and collimating and beam expanding system one it is intersegmental away from, the probe of terahertz detector is downward, for receiving terahertz emission, sample stage is arranged between terahertz detector and collimating and beam expanding system, it can move along the horizontal plane, computer is connected with terahertz detector data line, mechanical chuck is connect with databus, piece collection box of doing over again is independent.It can nondestructively measure the resistivity of silicon chip in the case where not contacting silicon chip, silicon chip will not be caused to damage.
Description
Technical field
The utility model is related to Terahertz Technology field, especially a kind of direct Terahertz non-destructive testing silicon chip transmitance is simultaneously
The device of further detection resistance rate.
Background technology
Terahertz (Terahertz, abbreviation THz, 1THz=1012Hz) wave is normally defined frequency in 0.1-10THz (waves
Grow at 30-3000 μm) electromagnetic wave in range, wave band be located at microwave and it is infrared between, in electronics and photonic propulsion research
Crossing domain.With other electromagnetic wave phase ratios, THz wave has many unique properties, such as safety, high-penetration, fingerprint
The advantages that spectrality and bandwidth, it is each to can be widely applied to biomedicine, non-destructive testing, radar, communication, military affairs, national defence, aviation etc.
A field.
In semicon industry and photovoltaic industry, the resistivity of silicon chip be judge conductive wafer ability important indicator it
One, to prevent specification gap too big, the resistivity of test silicon wafer becomes silicon chip and is processed into the important of chip and solar battery sheet
Preamble technique.
In existing technology, the measurement of silicon chip resistivity mostly uses the four probe method of contact, and this test method must
Silicon chip must be contacted, and applies certain dynamics, when measuring thin silicon wafer, easily causes the phenomenon that silicon chip is broken, while needing to regularly replace
The probe of four abrasions, causes cost to increase.And the non-contacting method for measuring silicon chip resistivity mostly uses current vortex test dress
It sets, such as a kind of solar power silicon sheet resistivity current vortex test device of the Chinese patent of Publication No. CN203941234U, passes through sense
The vortex formed on silicon chip is answered to generate current signal and voltage signal, then in turn through transmission, difference frequency, intermediate frequency amplification, detection
And the amplification of low pass, direct current, the analog quantity of electric current and voltage is finally obtained, the resistivity of silicon chip is calculated.But this method has
The shortcomings of equipment link is more, it is complicated to coordinate control, complex circuit designs, are not suitable for the generaI investigation to silicon chip sample on production line.
Therefore, a kind of device of non-destructive testing silicon chip resistivity is urgently developed in this field, Terahertz as a kind of special electromagnetic wave,
The resistivity of silicon chip has very big influence to the transmitance of THz wave, may be used and measures THz wave to silicon chip transmission
The mode of rate measures the resistivity of silicon chip.
Utility model content
The utility model is in view of the above-mentioned problems, propose device and its use of a kind of Terahertz non-destructive testing silicon chip resistivity
Method, it is different for the transmitance of same thickness different resistivity silicon chip using THz wave, to realize Terahertz to silicon chip
The non-contact measurement of resistivity can in the production line generally investigate silicon chip, compared to traditional selective examination mode, Ke Yiti
The yield rate and quality of high product.
To achieve the goals above, the technical solution adopted in the utility model is：
The device of a kind of direct Terahertz non-destructive testing silicon chip transmitance and further detection resistance rate, including Terahertz spoke
Penetrate source, collimating and beam expanding system, sample stage, terahertz detector, computer, mechanical chuck, piece collection box of doing over again；The Terahertz
Radiation source is arranged in bottom, and terahertz emission source radiates THz wave vertically upward, and the collimating and beam expanding system is arranged too
The surface in Hertzion radiation source, the terahertz detector are arranged right over collimating and beam expanding system, terahertz detector and standard
Have between direct expansion beam system one it is intersegmental away from, the probe of terahertz detector downward, for receiving terahertz emission, the sample stage
It is arranged between terahertz detector and collimating and beam expanding system, can moves along the horizontal plane, computer and terahertz detector number
It is connected according to line, mechanical chuck is connect with databus, and piece collection box of doing over again is independent, the mechanical chuck and piece collection of doing over again
Box is arranged at sample stage side；Mechanical chuck is put into piece collection box of doing over again for removing silicon chip from sample stage.
The terahertz emission source is backward wave oscillator, quantum cascade laser, free electron laser or titanium dioxide
One kind in carbon laser pumping terahertz emission source, preferably Terahertz quantum cascaded laser.
The collimating and beam expanding system is Kepler-type or Galilean type collimating and beam expanding system, and preferably Galilean type collimates
Beam-expanding system.
The sample stage is that centre has round-meshed sample stage, a diameter of 2-8cm of circular hole, and sample stage can be along one
A direction horizontal transmission, sample stage quantity are at least one；Silicon chip to be measured is placed on sample stage, and THz wave passes through on sample stage
Circular hole be radiated silicon chip.
The terahertz detector is micro-metering bolometer, Golay detector, pyroelectric detector, Schottky diode
One kind in detector, FET sensor or high electron mobility transistor detector, look-in frequency is ranging from
0.1-10THz can measure the power of incidence THz wave, preferably micro-metering bolometer.
The computer is connected using USB, 802.11b agreement or ICP/IP protocol with terahertz detector, for recording
The transmitance of THz wave show that the resistivity of silicon chip, computer are used by inputting the frequency of THz wave and the thickness of silicon chip
In control machinery sucker.
A diameter of 2-10cm of the mechanical chuck is used to capture the silicon chip of resistivity anomaly, and is placed on piece receipts of doing over again
Collect in box.
The piece collection box of doing over again is arranged in the working range of mechanical chuck, and the length of side for piece collection box of doing over again is 5-
30cm is highly 10cm, and open ended silicon chip quantity is 100.
The utility model additionally provides the application method of above-mentioned apparatus, and technical solution is as follows：
Silicon chip sample spaced horizontal on sample stage is placed, and silicon chip sample is not placed on odd number sample stage, the
Silicon chip sample is placed on even number sample stage.First, the frequency of THz wave and the thickness of silicon chip are inputted in a computer,
It is secondary, first sample stage is sent to the center of THz wave and is stopped 1-5 seconds, detector on empty sample stage is measured and is connect
Second sample stage is transmitted to the center of THz wave, and stop 1-5 seconds by the terahertz emission power received again,
Obtain transmitance of the Terahertz for silicon chip.It is transmitance according to formula T=α ln ρ, wherein T, α is and Terahertz frequency and silicon
The related coefficient of piece thickness, ρ are the resistivity of silicon chip, to calculate the resistivity of silicon chip by computer.Then behind transmission
Sample stage, each sample stage stops 1-5 seconds, and so on.When the resistivity of silicon chip occurs abnormal, computer makes mechanical suction
Disk captures the silicon chip of resistivity anomaly, and is placed on and does over again in piece collection box.
α in formula T=α ln ρ can test to obtain in conjunction with the present apparatus according to thickness, resistivity of known silicon chip etc. and terahertz
The hereby related factor alpha of frequency, silicon wafer thickness.
In conclusion due to taking above-mentioned technical proposal, the utility model has the beneficial effects that：
The utility model, can be the case where not contacting silicon chip compared to the device of traditional four probe method measured resistivity
Under, the resistivity of silicon chip is nondestructively measured, silicon chip will not be caused to damage.And the device can in the production line to silicon chip into
Row generaI investigation, and the underproof silicon chip of resistivity is done over again, compared to traditional selective examination mode, the finished product of product can be improved
Rate and quality.
Description of the drawings
Fig. 1 is a kind of schematic device of Terahertz non-destructive testing silicon chip resistivity described in the utility model.
It is marked in figure：1- terahertz emissions source, 2- collimating and beam expanding systems, 3- sample stages, 4- terahertz detectors, 5- are calculated
Machine, 6- mechanical chucks, 7- do over again piece collection box, 8- silicon chips.
Specific implementation mode
The technical solution of the utility model is described further with reference to embodiment, but it is not limited to this, every
Technical solutions of the utility model are modified or replaced equivalently, without departing from technical solutions of the utility model spirit and model
It encloses, should all cover in the scope of protection of the utility model.
Embodiment 1
As shown in Figure 1, a kind of device of Terahertz non-destructive testing silicon chip resistivity, including terahertz emission source 1, collimation are expanded
Beam system 2, at least one sample stage 3 moved in parallel, terahertz detector 4, computer 5, the machinery for capturing silicon chip
Sucker 6, piece collection box 7 of doing over again.The terahertz emission source 1 preferably Terahertz quantum cascaded laser, frequency 4.3THz,
Bottom in device is set, radiates THz wave vertically upward.The collimating and beam expanding system 2 is preferably that Galilean type collimation expands
Beam system is arranged above terahertz emission source 1.The sample stage 3 is preferably aperture can move horizontally in one direction for 3cm
Sample stage, quantity be it is multiple, be arranged above collimating and beam expanding system 2.The terahertz detector 4 is preferably Terahertz micrometering
Bolometer, be arranged above sample stage 3, detector probe downward, for receiving terahertz emission.The mechanical chuck 6
The length of side of a diameter of 2cm, piece collection box 7 of doing over again are 5cm, are highly 10cm, are arranged in 3 side of sample stage.The silicon chip sample
Product are monocrystalline silicon piece, a diameter of 5cm, and thickness is 100 μm.
Silicon chip sample spaced horizontal on sample stage 3 is placed, and does not place silicon chip sample on odd number sample stage 3,
Silicon chip sample is placed on even number sample stage 3.First, the frequency 4.3THz and silicon chip of THz wave are inputted in computer 5
100 μm of thickness secondly first sample stage 3 is sent to the center of THz wave and is stopped 5 seconds, empty sample is measured
Second sample stage 3 is transmitted to the center of THz wave by the terahertz emission power on platform 3 received by detector 4 again
Position, and stop 5 seconds, transmitance of the Terahertz for silicon chip is obtained, the resistivity of silicon chip is calculated (according to public affairs by computer 5
Formula T=α ln ρ, wherein T are transmitance, and α is coefficient related with Terahertz frequency and silicon wafer thickness, and ρ is the resistivity of silicon chip),
Then subsequent sample stage 3 is transmitted, each sample stage stops 5 seconds, and so on.When the resistivity of silicon chip occurs abnormal, meter
Calculation machine makes mechanical chuck 6 capture the silicon chip of resistivity anomaly, and is placed on and does over again in piece collection box 7.
The utility model a kind of device and its application method of Terahertz non-destructive testing silicon chip resistivity, compared to traditional
The device and method of four probe method measured resistivity, can be using Non-contact nondestructive formula right in the case where not contacting silicon chip
The resistivity of silicon chip measures, and silicon chip will not be made to generate damage.And the device can in the production line carry out silicon chip general
Look into, and the underproof silicon chip of resistivity done over again, compared to traditional selective examination mode, it will improve product yield rate and
Quality.
Claims (9)
1. a kind of direct Terahertz non-destructive testing silicon chip transmitance and the further device of detection resistance rate, which is characterized in that packet
Include terahertz emission source, collimating and beam expanding system, sample stage, terahertz detector, computer, mechanical chuck, piece collection box of doing over again；
The terahertz emission source is arranged in bottom, and terahertz emission source radiates THz wave, the collimator and extender system vertically upward
System is arranged in the surface in terahertz emission source, and the terahertz detector is arranged right over collimating and beam expanding system, Terahertz
Have between detector and collimating and beam expanding system one it is intersegmental away from, the probe of terahertz detector downward, for receiving terahertz emission,
The sample stage is arranged between terahertz detector and collimating and beam expanding system, can move along the horizontal plane, computer and terahertz
Hereby detector data line is connected, and mechanical chuck connect with databus, the piece collection box of doing over again independence, the mechanical chuck with
Piece collection box of doing over again is arranged at sample stage side.
2. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that terahertz emission source is backward wave oscillator, quantum cascade laser, free electron laser or dioxy
Change one kind in carbon laser pumping terahertz emission source.
3. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that collimating and beam expanding system is Kepler-type or Galilean type collimating and beam expanding system.
4. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that sample stage is that centre has round-meshed sample stage, a diameter of 2-8cm of circular hole, and sample stage can edge
One direction horizontal transmission, sample stage quantity are at least one.
5. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that silicon chip to be measured is placed on sample stage, and THz wave passes through the circular hole on sample stage to be radiated silicon chip.
6. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that terahertz detector is micro-metering bolometer, Golay detector, pyroelectric detector, two pole of Schottky
One kind in pipe detector, FET sensor or high electron mobility transistor detector, look-in frequency is ranging from
0.1-10THz can measure the power of incident THz wave.
7. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that computer is connected using USB, 802.11b agreement or ICP/IP protocol with terahertz detector, is used for
Record the transmitance of THz wave.
8. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that a diameter of 2-10cm of mechanical chuck, for the silicon chip of resistivity anomaly to be removed from sample stage,
And it is placed on and does over again in piece collection box.
9. a kind of direct Terahertz non-destructive testing silicon chip transmitance described in accordance with the claim 1 and further detection resistance rate
Device, which is characterized in that piece collection box of doing over again is arranged in the working range of mechanical chuck, and the length of side for piece collection box of doing over again is 5-
30cm is highly 10cm, and the silicon chip quantity that can be accommodated is 100.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721925351.9U CN208013081U (en) | 2017-12-29 | 2017-12-29 | A kind of device of direct Terahertz non-destructive testing silicon chip transmitance and further detection resistance rate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721925351.9U CN208013081U (en) | 2017-12-29 | 2017-12-29 | A kind of device of direct Terahertz non-destructive testing silicon chip transmitance and further detection resistance rate |
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| CN208013081U true CN208013081U (en) | 2018-10-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108226099A (en) * | 2017-12-29 | 2018-06-29 | 北京工业大学 | A kind of device and its application method of Terahertz non-destructive testing silicon chip resistivity |
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- 2017-12-29 CN CN201721925351.9U patent/CN208013081U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108226099A (en) * | 2017-12-29 | 2018-06-29 | 北京工业大学 | A kind of device and its application method of Terahertz non-destructive testing silicon chip resistivity |
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