CN208008947U - It is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision - Google Patents
It is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision Download PDFInfo
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- CN208008947U CN208008947U CN201820145550.6U CN201820145550U CN208008947U CN 208008947 U CN208008947 U CN 208008947U CN 201820145550 U CN201820145550 U CN 201820145550U CN 208008947 U CN208008947 U CN 208008947U
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- reaction cavity
- inner tube
- sample introduction
- experimental provision
- metal chalcogenide
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Abstract
The utility model provide it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision, including reaction cavity, the reaction cavity is divided into left and right two parts, the left side is low-temperature space, the right is high-temperature region, the reaction cavity low-temperature space is fixed with grid holder, reaction cavity is divided into several separate spaces by the grid holder, it is placed with inner tube on the grid holder, precursors are carried in said inner tube, said inner tube left end is connected with magnetic moving device by catch bar, and said inner tube can move left and right on grid holder.Reaction cavity is divided into multiple separate spaces with grid holder, each separate space places the inner tube for carrying precursors, by the way that the precursors in inner tube are moved to high-temperature region in batches, achieve the purpose that presoma can continuously be assembled by not opening reaction cavity, ensure that chemical vapour deposition technique growth constitutes the superperformance of hetero-junctions.
Description
Technical field
The utility model belongs to chemical vapour deposition technique field, and in particular to one kind can continuous sample introduction growth transition metal
The experimental provision of chalcogen compound crystal.
Background technology
Two-dimentional transient metal chalcogenide compound crystal is due to superior physics and chemical characteristic, scene effect pipe, light
There is good application prospect in the fields such as electrical part, lithium ion battery and photocatalysis, mutually constitute hetero-junctions and form device
Also there is far-reaching scientific research and application value.However, when chemical vapour deposition technique grows and constitutes heterojunction device, need
Opening reaction cavity assembles presoma and is reacted again, this will bring the influence of varying environment to hetero-junctions when being formed, the
The material interface of one secondary growth can be exposed in an atmosphere, to bring the dust and some nano-particles that are unfavorable for material surface
Pollution, to influence growth when secondary formation hetero-junctions and constitute the performance of device, especially photoelectric properties.
Utility model content
The problem of the technical problems to be solved in the utility model is for the above physical presence, providing one kind can continuous sample introduction
Grow the experimental provision of transient metal chalcogenide compound crystal, the dress which can be lasting in the case where not opening reaction cavity
With precursors, ensure that chemical vapour deposition technique growth constitutes the superperformance of hetero-junctions.
In order to solve the above technical problems, the utility model uses following technical solution：One kind can continuous sample introduction grew
The experimental provision of metal chalcogenides crystal is crossed, including reaction cavity, the reaction cavity is divided into left and right two parts, and the left side is
Low-temperature space, the right are high-temperature region, and the reaction cavity low-temperature space is fixed with grid holder, and the grid holder divides reaction cavity
At several separate spaces, it is placed with inner tube on the grid holder, precursors are carried in said inner tube, said inner tube is left
End is fixedly connected with magnetic moving device by catch bar, and said inner tube can move left and right on grid holder.
Preferably, the magnetic moving device is permanent magnet.
Preferably, the magnetic moving device passes through external magnetic close to the reaction cavity inner wall, the reaction cavity outer wall
Iron attracts with the magnetic moving device.
Preferably, by being continually fed into carrier gas from left to right in the reaction cavity.
Preferably, the carrier gas is the inert gases such as argon gas or helium.
Preferably, substrate is equipped in the reaction cavity high-temperature region, reaction cavity high-temperature region periphery is connected with heating
Device.
Preferably, the reaction cavity and the grid holder are quartz or ceramic material.
Preferably, said inner tube is process by rigidity and heat-resisting material quartz, corundum or zirconium oxide.
Compared with prior art, reaction cavity is divided into multiple separate spaces by the utility model with grid holder, each
Separate space all places the inner tube for carrying precursors, by the way that the precursors in inner tube are moved to high temperature in batches
Area achievees the purpose that presoma can continuously be assembled by not opening reaction cavity, and it is different to ensure that chemical vapour deposition technique growth is constituted
The superperformance of matter knot.Grid holder, reaction cavity and inner tube are that non-magnetic material is made, and are attracted by external magnet
When the magnetic moving device movement of inner tube front end, it is unaffected.
Description of the drawings
Fig. 1 is the overall structure diagram of experimental provision used in the utility model；
Fig. 2 is the grid supporting structure schematic diagram in the utility model reaction cavity；
Fig. 3 is the utility model inner tube and connects the structural schematic diagram of the magnetic moving device of inner tube one end.
It illustrates：1- grid holders, 2- magnetic moving devices, 3- catch bars, 4- inner tubes, 5- precursors, 6- substrates,
7- heating devices, 8- reaction cavities.
Specific implementation mode
Below in conjunction with the accompanying drawings, the utility model is further described.
As shown in Figure 1, it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision, comprising react
Cavity (8), reaction cavity (8) are divided into left and right two parts, and the left side is low-temperature space, and the right is high-temperature region, reaction cavity (8) low-temperature space
It is fixed with grid holder (1), reaction cavity (8) and grid holder (1) are quartz or ceramic material.Grid holder (1) will be anti-
It answers cavity to be divided into several separate spaces, inner tube (4) is placed on grid holder (1), inner tube (4) is by rigidity and heat-resisting material stone
English, corundum or zirconium oxide are process.Precursors (5) are carried in inner tube (4), inner tube left end is solid by catch bar (3)
Surely it is connected with magnetic moving device (2), such as permanent magnet, magnetic moving device (2) is close to reaction cavity (8) inner wall, reaction cavity
(8) outer wall is attracted by external magnet and magnetic moving device.Drive inner tube (4) in grid holder (1) by the external magnet of movement
On move left and right.Substrate (6) is equipped in reaction cavity (8) high-temperature region, reaction cavity (8) high-temperature region periphery is connected with heating device
(7), by being continually fed into the inert gases such as argon gas or helium from left to right as carrier gas in reaction cavity (8).Magnetic moving device (2)
Be fixed on one end of catch bar (3), the other end of catch bar (3) is placed in the low-temperature end of inner tube (4), for push inner tube (4) into
Enter high-temperature region to be chemically reacted, wait for one kind after reaction, then passes through magnetic moving device (2) and push the inner tube for needing movement
(4) enter the chemical reaction that is needed of conversion zone, to achieve the purpose that two dimensional crystal is persistently grown up or formed hetero-junctions.
The above only expresses preferred embodiments of the present invention, the description thereof is more specific and detailed, but not
Can the limitation to the utility model patent range therefore be interpreted as.It should be pointed out that for the ordinary skill people of this field
For member, without departing from the concept of the premise utility, several deformations can also be made, improves and substitutes, these all belong to
In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (8)
1. it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision, including reaction cavity, feature
It is that the reaction cavity is divided into left and right two parts, the left side is low-temperature space, and the right is high-temperature region, and the reaction cavity low-temperature space is solid
There are grid holder, the grid holder that reaction cavity is divided into several separate spaces, inner tube is placed on the grid holder surely,
Precursors are carried in said inner tube, said inner tube left end is fixedly connected with magnetic moving device by catch bar, described interior
Pipe can move left and right on grid holder.
2. it is according to claim 1 it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision,
It is characterized in that the magnetic moving device is permanent magnet.
3. it is according to claim 2 it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision,
It is characterized in that the magnetic moving device, close to the reaction cavity inner wall, the reaction cavity outer wall passes through external magnet and institute
State magnetic moving device attraction.
4. it is according to claim 1 it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision,
It is characterized in that by being continually fed into carrier gas from left to right in the reaction cavity.
5. it is according to claim 4 it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision,
It is characterized in that the carrier gas is the inert gases such as argon gas or helium.
6. it is according to claim 1 it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision,
It is characterized in that being equipped with substrate in the reaction cavity high-temperature region, reaction cavity high-temperature region periphery is connected with heating device.
7. it is according to claim 1 it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision,
It is characterized in that the reaction cavity and the grid holder are quartz or ceramic material.
8. it is according to claim 1 it is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision,
It is characterized in that said inner tube is process by rigidity and heat-resisting material quartz, corundum or zirconium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820145550.6U CN208008947U (en) | 2018-01-29 | 2018-01-29 | It is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820145550.6U CN208008947U (en) | 2018-01-29 | 2018-01-29 | It is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision |
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| Publication Number | Publication Date |
|---|---|
| CN208008947U true CN208008947U (en) | 2018-10-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820145550.6U Expired - Fee Related CN208008947U (en) | 2018-01-29 | 2018-01-29 | It is a kind of can continuous sample introduction growth transient metal chalcogenide compound crystal experimental provision |
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| Country | Link |
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| CN (1) | CN208008947U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114059157A (en) * | 2020-07-31 | 2022-02-18 | 清华大学 | Method for preparing transition metal chalcogenide crystal |
-
2018
- 2018-01-29 CN CN201820145550.6U patent/CN208008947U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114059157A (en) * | 2020-07-31 | 2022-02-18 | 清华大学 | Method for preparing transition metal chalcogenide crystal |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181026 Termination date: 20210129 |