CN208001234U - A kind of translation circuit - Google Patents
A kind of translation circuit Download PDFInfo
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- CN208001234U CN208001234U CN201820325875.2U CN201820325875U CN208001234U CN 208001234 U CN208001234 U CN 208001234U CN 201820325875 U CN201820325875 U CN 201820325875U CN 208001234 U CN208001234 U CN 208001234U
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Abstract
A kind of translation circuit,Including first,Three DC power supplies,First,Three capacitances,First,Three,Five,Six,Seven,Eight metal-oxide-semiconductors,Drive module,Control module,Equivalent inductance and filter,First,Three DC power supplies,First,Three capacitances are connected on just respectively,Between negative busbar,First,Contact between three DC power supplies and first,Contact between three capacitances and third metal-oxide-semiconductor source electrode,The drain electrode of 5th metal-oxide-semiconductor is connected,5th metal-oxide-semiconductor source electrode connects the drain electrode of the 7th metal-oxide-semiconductor,First metal-oxide-semiconductor source electrode connects third,Six metal-oxide-semiconductors drain,The drain electrode of first metal-oxide-semiconductor connects positive bus-bar,6th metal-oxide-semiconductor source electrode connects the drain electrode of the 8th metal-oxide-semiconductor,7th,Eight metal-oxide-semiconductor source electrodes connect negative busbar,First,Three,Five,Six,Seven,Eight metal-oxide-semiconductor grids connect drive module respectively,Drive module connects control module,5th,Contact between seven metal-oxide-semiconductors connects one input terminal of filter,6th,Contact between eight metal-oxide-semiconductors connects another input terminal of filter by equivalent inductance.The switching loss of switching tube can be reduced using the circuit.
Description
Technical field
The utility model is related to switching power circuits, more particularly to a kind of translation circuit.
Background technology
In existing DC converting application scenario, such as mesohigh inverter, power amplifier, the loss of power switch tube
It is larger.Therefore, a kind of new translation circuit how is designed, the switch of the switching tube in Switching Power Supply translation circuit is effectively reduced
Loss, is existing Switching Power Supply translation circuit problem to be solved.
Utility model content
The main purpose of the utility model is that in view of the deficiencies of the prior art, providing a kind of translation circuit, the change is used
The switching loss of switching tube can be substantially reduced by changing circuit.
To achieve the above object, the utility model uses following technical scheme:
At the 1st aspect of the utility model, a kind of translation circuit, including the first DC power supply, third DC power supply, first
Capacitance, the first metal-oxide-semiconductor, third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drives third capacitance
Dynamic model block, control module, equivalent inductance and filter, first DC power supply and the third DC power supply, described the
One capacitance and third capacitance are connected between positive bus-bar and negative busbar respectively, first DC power supply, the third direct current
Source electrode, the 5th MOS of the tie point and third metal-oxide-semiconductor between tie point and first capacitance, third capacitance between source
The drain electrode of pipe is connected, and the source electrode of the 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, and the source electrode of first metal-oxide-semiconductor connects institute
The drain electrode and the 6th metal-oxide-semiconductor for stating third metal-oxide-semiconductor drain, the drain electrode connection positive bus-bar of first metal-oxide-semiconductor, and the described 6th
The source electrode of metal-oxide-semiconductor connects the drain electrode of the 8th metal-oxide-semiconductor, and the source electrode of the 7th metal-oxide-semiconductor connects with the source electrode of the 8th metal-oxide-semiconductor
Meet negative busbar, first metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th MOS
Pipe, the 8th metal-oxide-semiconductor grid be separately connected the drive module, the drive module connects the control module, described
Tie point between 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor connects an input terminal of the filter, the 6th metal-oxide-semiconductor with
Tie point between 8th metal-oxide-semiconductor connects another input terminal of the filter by the equivalent inductance.
At the 2nd aspect of the utility model, a kind of translation circuit, including the first DC power supply, the second DC power supply, first
Capacitance, the second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drives the second capacitance
Dynamic model block, control module, equivalent inductance and filter, first DC power supply and second DC power supply, described the
One capacitance and the second capacitance are connected between positive bus-bar and negative busbar respectively, first DC power supply, second direct current
Drain electrode, the 7th MOS of the tie point and the 4th metal-oxide-semiconductor between tie point and first capacitance, the second capacitance between source
The source electrode of pipe is connected, and the drain electrode of the 7th metal-oxide-semiconductor connects the source electrode of the 5th metal-oxide-semiconductor, and the source electrode of second metal-oxide-semiconductor connects
Negative busbar is connect, the drain electrode of second metal-oxide-semiconductor connects the source electrode of the source electrode and the 8th metal-oxide-semiconductor of the 4th metal-oxide-semiconductor, described
The drain electrode of 8th metal-oxide-semiconductor connects the source electrode of the 6th metal-oxide-semiconductor, the drain electrode of the 5th metal-oxide-semiconductor and the leakage of the 6th metal-oxide-semiconductor
Pole connects positive bus-bar, second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the described 7th
Metal-oxide-semiconductor, the 8th metal-oxide-semiconductor grid be separately connected the drive module, the drive module connects the control module, institute
State the input terminal that the tie point between the 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor connects the filter, the 6th metal-oxide-semiconductor
Tie point between the 8th metal-oxide-semiconductor connect another input terminal of the filter by the equivalent inductance.
At the 3rd aspect of the utility model, a kind of translation circuit, including the first DC power supply, the second DC power supply, third
DC power supply, the first capacitance, the second capacitance, third capacitance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor,
5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control module, equivalent inductance and filter,
Second DC power supply, first DC power supply and the third DC power supply successively, second capacitance, described first
Capacitance and third capacitance are connected between negative busbar and positive bus-bar respectively successively, first DC power supply, the third direct current
The source electrode of the tie point and third metal-oxide-semiconductor between tie point and first capacitance, third capacitance between power supply, the 5th
The drain electrode of metal-oxide-semiconductor is connected, and the source electrode of the 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, and the source electrode of first metal-oxide-semiconductor connects
Connecing drain electrode and the 6th metal-oxide-semiconductor drain electrode of the third metal-oxide-semiconductor, the drain electrode of first metal-oxide-semiconductor connects positive bus-bar, and described the
The source electrode of six metal-oxide-semiconductors connects the drain electrode of the 8th metal-oxide-semiconductor, the drain electrode of the source electrode and the 4th metal-oxide-semiconductor of the 7th metal-oxide-semiconductor
Connect the tie point and first capacitance, second capacitance between first DC power supply, second DC power supply
Between tie point, the drain electrode phase of the source electrode of the 8th metal-oxide-semiconductor and the source electrode of the 4th metal-oxide-semiconductor, second metal-oxide-semiconductor
Even, the source electrode of second metal-oxide-semiconductor connects positive bus-bar, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third metal-oxide-semiconductor, institute
State the grid difference of the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor
Connect the drive module, the drive module connects the control module, the 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor it
Between tie point connect an input terminal of the filter, the tie point between the 6th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor is logical
Cross another input terminal that the equivalent inductance connects the filter.
At the 4th aspect of the utility model, a kind of translation circuit, including the first DC power supply, the second DC power supply, first
Capacitance, the first metal-oxide-semiconductor, third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drives the second capacitance
Dynamic model block, control module, isolating transformer circuit and secondary-side circuitry, first DC power supply and second direct current
Source, first capacitance and the second capacitance are connected between positive bus-bar and negative busbar respectively, first DC power supply, described
The source electrode of the tie point and third metal-oxide-semiconductor between tie point and first capacitance, the second capacitance between two DC power supplies,
The drain electrode of 5th metal-oxide-semiconductor is connected, and the source electrode of the 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, the source of first metal-oxide-semiconductor
Pole connects drain electrode and the 6th metal-oxide-semiconductor drain electrode of the third metal-oxide-semiconductor, and the drain electrode of first metal-oxide-semiconductor connects positive bus-bar, institute
The source electrode for stating the 6th metal-oxide-semiconductor connects the drain electrode of the 8th metal-oxide-semiconductor, source electrode and the 8th metal-oxide-semiconductor of the 7th metal-oxide-semiconductor
Source electrode connects negative busbar, first metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, described the
Seven metal-oxide-semiconductors, the 8th metal-oxide-semiconductor grid be separately connected the drive module, the drive module connects the control module,
Tie point between 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor connects the primary first end of the isolating transformer circuit,
Tie point between 6th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor connects the primary second end of the isolating transformer circuit,
The secondary of the isolating transformer circuit connects the secondary-side circuitry.
Further, the secondary-side circuitry is full-bridge or half-bridge or full-wave rectifying circuit.
At the 5th aspect of the utility model, a kind of translation circuit, including the first DC power supply, the second DC power supply, first
Capacitance, the second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drives the second capacitance
Dynamic model block, control module, isolating transformer circuit and secondary-side circuitry, first DC power supply and second direct current
Source, first capacitance and the second capacitance are connected between positive bus-bar and negative busbar respectively, first DC power supply, described
The drain electrode of the tie point and the 4th metal-oxide-semiconductor between tie point and first capacitance, the second capacitance between two DC power supplies,
The source electrode of 7th metal-oxide-semiconductor is connected, and the drain electrode of the 7th metal-oxide-semiconductor connects the source electrode of the 5th metal-oxide-semiconductor, second metal-oxide-semiconductor
Source electrode connect negative busbar, the drain electrode of second metal-oxide-semiconductor connects the source electrode of the 4th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor
Source electrode, the drain electrode of the 8th metal-oxide-semiconductor connect the source electrode of the 6th metal-oxide-semiconductor, the drain electrode and the described 6th of the 5th metal-oxide-semiconductor
The drain electrode of metal-oxide-semiconductor connects positive bus-bar, second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th MOS
Pipe, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor grid be separately connected the drive module, described in the drive module connection
Control module, the tie point between the 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor connect the primary of the isolating transformer circuit
First end, the tie point between the 6th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor connects the primary of the isolating transformer circuit
Second end, the secondary of the isolating transformer circuit connects the secondary-side circuitry.
Further, the secondary-side circuitry is full-bridge or half-bridge or full-wave rectifying circuit.
At the 6th aspect of the utility model, a kind of translation circuit, including the first DC power supply, the second DC power supply, third
DC power supply, the first capacitance, the second capacitance, third capacitance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor,
5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control module, isolating transformer circuit and
Secondary-side circuitry, second DC power supply, first DC power supply and the third DC power supply successively, second electricity
Hold, first capacitance and third capacitance are connected between negative busbar and positive bus-bar respectively successively, first DC power supply, institute
State the tie point between third DC power supply and the tie point between first capacitance, third capacitance and third metal-oxide-semiconductor
The drain electrode of source electrode, the 5th metal-oxide-semiconductor is connected, and the source electrode of the 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, first metal-oxide-semiconductor
Source electrode connect the drain electrode of the third metal-oxide-semiconductor and the 6th metal-oxide-semiconductor drain electrode, the drain electrode of first metal-oxide-semiconductor connect positive pole
The source electrode of line, the 6th metal-oxide-semiconductor connects the drain electrode of the 8th metal-oxide-semiconductor, the source electrode and the described 4th of the 7th metal-oxide-semiconductor
The drain electrode of metal-oxide-semiconductor connects tie point and first capacitance, institute between first DC power supply, second DC power supply
State the tie point between the second capacitance, the source electrode of the 8th metal-oxide-semiconductor and source electrode, second metal-oxide-semiconductor of the 4th metal-oxide-semiconductor
Drain electrode be connected, the source electrode of second metal-oxide-semiconductor connects positive bus-bar, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third
Metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor
Grid is separately connected the drive module, and the drive module connects the control module, the 5th metal-oxide-semiconductor and the described 7th
Tie point between metal-oxide-semiconductor connects the primary first end of the isolating transformer circuit, the 6th metal-oxide-semiconductor and the described 8th
The secondary of the primary second end of tie point connection between metal-oxide-semiconductor, the isolating transformer circuit connects the primary side electricity
Road.
Further, the secondary-side circuitry is full-bridge or half-bridge or full-wave rectifying circuit.
The translation circuit that the utility model is used in Switching Power Supply, is controlled accordingly, the switch damage of switching tube
Consumption will substantially reduce, two far superior to single power levels.
Description of the drawings
Fig. 1 is the structure chart of the translation circuit (non-isolation type) of the utility model embodiment 1;
Fig. 2 is the output voltage wave figure of translation circuit shown in Fig. 1;
Fig. 3 is that the output voltage wave of translation circuit shown in Fig. 1 contrasts figure with switch controlled sequential;
Fig. 4 is the structure chart of the translation circuit (non-isolation type) of the utility model embodiment 2;
Fig. 5 is the output voltage wave figure of translation circuit shown in Fig. 4;
Fig. 6 is that the output voltage wave of translation circuit shown in Fig. 4 contrasts figure with switch controlled sequential;
Fig. 7 is the structure chart of the translation circuit (non-isolation type) of the utility model embodiment 3;
Fig. 8 is the output voltage wave figure of translation circuit shown in Fig. 7;
Fig. 9 is that the output voltage wave of translation circuit shown in Fig. 7 contrasts figure with switch controlled sequential;
Figure 10 is the structure chart of the translation circuit (isolated form) of the utility model embodiment 4;
Figure 11 is the structure chart of the translation circuit (isolated form) of the utility model embodiment 5;
Figure 12 is the structure chart of the translation circuit (isolated form) of the utility model embodiment 6;
Figure 13 is the equivalent deformation examples of circuits figure of the isolating transformer circuit in the utility model embodiment 4-6.
Specific implementation mode
It elaborates below to the embodiment of the utility model.It is emphasized that following the description is only example
Property, rather than in order to limit the scope of the utility model and its application.
Embodiment 1
Refering to fig. 1, a kind of translation circuit, including the first DC power supply DC1, third DC power supply DC3, the first capacitance C1,
Third capacitance C3, the first metal-oxide-semiconductor Q1, third metal-oxide-semiconductor Q3, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th
Metal-oxide-semiconductor Q8, drive module, control module, equivalent inductance L1 and filter, the first DC power supply DC1 and the third
DC power supply DC3, the first capacitance C1 and third capacitance C3 are connected on respectively between positive bus-bar+BUS and negative busbar-BUS, institute
State the tie point and the first capacitance C1, third capacitance C3 between the first DC power supply DC1, the third DC power supply DC3
Between tie point and third metal-oxide-semiconductor Q3 source electrode, the 5th metal-oxide-semiconductor Q5 drain electrode be connected, the source electrode of the 5th metal-oxide-semiconductor Q5
The drain electrode of the 7th metal-oxide-semiconductor Q7 is connected, the source electrode of the first metal-oxide-semiconductor Q1 connects the drain electrode and described of the third metal-oxide-semiconductor Q3
The source electrode of six metal-oxide-semiconductor Q6 drain electrodes, drain electrode connection the positive bus-bar+BUS, the 6th metal-oxide-semiconductor Q6 of the first metal-oxide-semiconductor Q1 connects institute
The drain electrode of the 8th metal-oxide-semiconductor Q8 is stated, the source electrode of the 7th metal-oxide-semiconductor Q7 connect negative busbar-with the source electrode of the 8th metal-oxide-semiconductor Q8
BUS, the first metal-oxide-semiconductor Q1, the third metal-oxide-semiconductor Q3, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the described 7th
Metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8 grid be separately connected the drive module, the drive module connects the control mould
Block, the tie point between the 5th metal-oxide-semiconductor Q5 and the 7th metal-oxide-semiconductor Q7 connects an input terminal of the filter, described
Tie point between 6th metal-oxide-semiconductor Q6 and the 8th metal-oxide-semiconductor Q8 connects the another of the filter by the equivalent inductance L1
One input terminal.
Operation principle:
When controlling translation circuit work as shown in Figure 1, such as in inverter mode, the first metal-oxide-semiconductor Q1, the 6th MOS can be connected
Pipe Q6, the 5th metal-oxide-semiconductor Q5 either the 5th metal-oxide-semiconductor Q5, the 8th metal-oxide-semiconductor Q8 or the first metal-oxide-semiconductor Q1, the 6th metal-oxide-semiconductor Q6, the 7th
Metal-oxide-semiconductor Q7 constitutes circuit, so as to by the first DC power supply DC1, the second DC power supply DC2 or the first DC power supply DC1
The voltage inversion of+the second DC power supply DC2 either the 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8 or the 5th metal-oxide-semiconductor Q5, third
Metal-oxide-semiconductor Q3, the 6th enough afterflows of metal-oxide-semiconductor Q6 conductings.Referring to Fig.2, this circuit can be there are four circuit when working, five level, i.e.,
V1, V2 ,-V1, V1+V2 and " 0 ".If DC1=V1=150V, DC3=V2=250, so DC1+DC3=v1+v2=400V,
Its amplitude maximum of circuit output waveform shown in Fig. 2 opens corresponding switching tube inversion output in 380V (being less than 400V),
The circuit in the regions 0-a1 (or a2-0) release of section DC1 carries out PWM mode work, i.e. the 7th metal-oxide-semiconductor Q7 normal opens, the 6th MOS
Pipe Q6 by PWM mode it is open-minded, third metal-oxide-semiconductor Q, the 8th metal-oxide-semiconductor Q8 anti-and diode current flow or can carry out as needed
Synchronous rectification pattern it is open-minded.Vout=V1*D1 at this time, D1 are the duty ratio of PWM.6th metal-oxide-semiconductor Q6, the 8th metal-oxide-semiconductor at this time
The switching voltage that Q8 is born is V1, is far below 400V;At the section a1-b1 (or b2-a2), then corresponding open is opened
Guan Guan forms the copped wave of V2 (DC3), opens the first metal-oxide-semiconductor Q1 at this time and work by PWM mode, the 6th metal-oxide-semiconductor Q6 normal opens, third
The anti-and diode current flow of metal-oxide-semiconductor Q3, the 5th metal-oxide-semiconductor Q5, or the open-minded of rectification mode can be synchronized as needed.This
When Vout=V2*D2, D2 be PWM duty ratio.Equally, the switch electricity that the first metal-oxide-semiconductor Q1, third metal-oxide-semiconductor Q3 are born at this time
Pressure is V2, is far below 400V;At the sections b1-b2, then corresponding switching tube is opened, forms cutting for V1+V2 (DC1+DC3)
Wave opens the first metal-oxide-semiconductor Q1 and works by PWM mode at this time, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7 normal opens, then third metal-oxide-semiconductor
The anti-and diode current flow afterflow of Q3, or the open-minded of rectification mode can be synchronized as needed.Vout=(V1+ at this time
V2) * D3+V1Dx, D3 are the duty ratio of PWM, and Dx is the conducting dutycycle of afterflow.It is done alternatively, opening the 7th metal-oxide-semiconductor Q7 at this time
PWM mode works, the 6th metal-oxide-semiconductor Q6, the first metal-oxide-semiconductor Q1 normal opens, the then anti-and diode current flow afterflow of the 5th metal-oxide-semiconductor Q5,
Or the open-minded of rectification mode can be synchronized as needed.Vout=(V1+V2) * D3+V1Dx at this time, D3 are accounting for for PWM
Empty ratio, Dx are the conducting dutycycle of afterflow.Equally, the first metal-oxide-semiconductor Q1, third metal-oxide-semiconductor Q3 or the 7th metal-oxide-semiconductor Q7, at this time
The switching voltage that five metal-oxide-semiconductor Q5 are born is V2 or V1, is far below 400V.So in the circuit, the switch of switching tube damages
Consumption substantially reduces, much better than two single power levels.Simultaneously the circuit have also achieved conventional two power supplys (three level) cannot
The function of reality.
Waveform as shown in Figure 3 shows the waveform that this circuit maximum can be with output amplitude for V1+V2, if required output wave
The maximum amplitude of shape only needs V1 ranges or V2 ranges, then as described above, open corresponding switching tube and constitute circuit i.e.
It can.If necessary to the waveform of this circuit output negative sense, operation principle can with and so on, only its maximum amplitude is only
Maximum voltage in V1, V2, therefore, if it is desirable to export the waveform of two-way equivalent amplitude, then maximum amplitude can only achieve V1 or
Maximum voltage in person V2.
In the non-isolation type embodiment of the utility model, the equivalent inductance in equivalent inductance L1 representation transformation circuit loops,
It is not limited to either be not fixed as only access in the inductance of certain side or both sides.In addition, the utility model further includes by bearing
The situation of the equivalent inductance and filter that are provided such as generator (motor) is provided.
Embodiment 2
Refering to Fig. 4, a kind of translation circuit, including the first DC power supply DC1, the second DC power supply DC2, the first capacitance C1,
Second capacitance C2, the second metal-oxide-semiconductor Q2, the 4th metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th
Metal-oxide-semiconductor Q8, drive module, control module, equivalent inductance L1 and filter, the first DC power supply DC1 and described second
DC power supply DC2, the first capacitance C1 and the second capacitance C2 are connected on respectively between positive bus-bar+BUS and negative busbar-BUS, institute
State the tie point and the first capacitance C1, the second capacitance C2 between the first DC power supply DC1, the second DC power supply DC2
Between tie point and the source electrode of the drain electrode of the 4th metal-oxide-semiconductor Q4, the 7th metal-oxide-semiconductor Q7 be connected, the drain electrode of the 7th metal-oxide-semiconductor Q7
Connect the source electrode of the 5th metal-oxide-semiconductor Q5, source electrode connection the negative busbar-BUS, the second metal-oxide-semiconductor Q2 of the second metal-oxide-semiconductor Q2
Drain electrode connect the 4th metal-oxide-semiconductor Q4 source electrode and the 8th metal-oxide-semiconductor Q8 source electrode, the drain electrode of the 8th metal-oxide-semiconductor Q8
The source electrode of the 6th metal-oxide-semiconductor Q6 is connected, the drain electrode of the 5th metal-oxide-semiconductor Q5 connects just with the drain electrode of the 6th metal-oxide-semiconductor Q6
It is busbar+BUS, the second metal-oxide-semiconductor Q2, the 4th metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, described
7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8 grid be separately connected the drive module, the drive module connects the control
Molding block, the tie point between the 5th metal-oxide-semiconductor Q5 and the 7th metal-oxide-semiconductor Q7 connect an input terminal of the filter,
Tie point between the 6th metal-oxide-semiconductor Q6 and the 8th metal-oxide-semiconductor Q8 passes through the equivalent inductance L1 connections filter
Another input terminal.
The present embodiment is negative terminals of the second DC power supply DC2 in the first DC power supply DC1 with the difference of previous embodiment, i.e.,
It is the circuit of symmetry with embodiment one.
Operation principle:
It is similar with previous embodiment one if DC1=V1, DC2=V2 refering to Fig. 5, the circuit of the present embodiment can there are four
Circuit, five level, i.e. V1 ,-V1 ,-V2 ,-(V1+V2) and " 0 ".Assuming that DC1=V1=150V, DC2=V2=250, DC1+
DC2=v1+v2=400V.Its amplitude maximum of output waveform shown in fig. 5 opens corresponding switch in 380V (being less than 400V)
Pipe inversion exports, and works by PWM mode in the circuit in the regions 0-a3 (or a4-0) release of section DC1, i.e., the 5th metal-oxide-semiconductor Q5 is normal
Logical, the 8th metal-oxide-semiconductor Q8 is open-minded by PWM mode, the 4th metal-oxide-semiconductor Q4, the 6th metal-oxide-semiconductor Q6 anti-and diode current flow or can root
According to needing to synchronize the open-minded of rectification mode.Vout=V1*D1 at this time, D1 are the duty ratio of PWM.At this time the 6th metal-oxide-semiconductor Q6,
The switching voltage that 8th metal-oxide-semiconductor Q8 is born is V1, is far below 400V;It is at the section a3-b3 (or b4-a4), then open-minded
Corresponding switching tube forms the copped wave of V2 (DC3), opens the second metal-oxide-semiconductor Q2 at this time and works by PWM mode, the 8th MOS
Pipe Q8 normal opens, the 7th metal-oxide-semiconductor Q7, the 4th metal-oxide-semiconductor Q4 anti-and diode current flow, or rectification can be synchronized as needed
Pattern it is open-minded.Vo=V2*D2 at this time, D2 are the duty ratio of PWM.Equally, the second metal-oxide-semiconductor Q2, the 4th metal-oxide-semiconductor Q4 are held at this time
The switching voltage received is V2, is far below 400V;At the sections b3-b4, then opens corresponding switching tube and form V1+V2 (DC1
+ DC3) copped wave, open the second metal-oxide-semiconductor Q2 at this time and work by PWM mode, the 8th metal-oxide-semiconductor Q8, the 5th metal-oxide-semiconductor Q5 normal opens,
Then the anti-and diode current flow afterflow of the 4th metal-oxide-semiconductor Q4, or the open-minded of rectification mode can be synchronized as needed.This
When Vout=(V1+V2) * D3+V1Dx, D3 is the duty ratio of PWM, and Dx is the conducting dutycycle of afterflow.Alternatively, opening at this time
Five metal-oxide-semiconductor Q5 do PWM mode work, the 8th metal-oxide-semiconductor Q8, the second metal-oxide-semiconductor Q2 normal opens, then anti-and two poles of the 7th metal-oxide-semiconductor Q7
Afterflow is connected in pipe, or can synchronize the open-minded of rectification mode as needed.Vout=(V1+V2) * D3+V1Dx at this time,
D3 is the duty ratio of PWM, and Dx is the conducting dutycycle of afterflow.Equally, the second metal-oxide-semiconductor Q2, the 4th metal-oxide-semiconductor Q4 or the 7th at this time
The switching voltage that metal-oxide-semiconductor Q7, the 5th metal-oxide-semiconductor Q5 are born is V2 or V1, is far below 400V.So in the circuit, switch
The switching loss of pipe substantially reduces, much better than two single power levels.The circuit has also achieved conventional two power supplys (three simultaneously
Level) cannot reality function.
Equally, waveform as shown in FIG. 6 shows the waveform that this circuit maximum can be with output amplitude for V1+V2, if required
The maximum amplitude of output waveform only needs V1 V2 ranges, then opens corresponding switching tube forming circuit as described above i.e.
It can.If necessary to the waveform of this circuit output forward direction, operation principle can with and so on, only its maximum amplitude is only
Maximum voltage in V1, V2, therefore, if it is desirable to export the waveform of two-way equivalent amplitude, then maximum amplitude can only achieve V1 or
Maximum voltage in person V2.
Embodiment 3
Refering to Fig. 7, a kind of translation circuit, including the first DC power supply DC1, the second DC power supply DC2, third DC power supply
DC3, the first capacitance C1, the second capacitance C2, third capacitance C3, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3, the 4th
Metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8, drive module, control module, etc.
Imitate inductance L1 and filter, the second DC power supply DC2, the first DC power supply DC1 and the third DC power supply
DC3 successively, the second capacitance C2, the first capacitance C1 and third capacitance C3 be connected on negative busbar-BUS and just respectively successively
Between busbar+BUS, the tie point between the first DC power supply DC1, the third DC power supply DC3 and first electricity
The drain electrode for holding the source electrode, the 5th metal-oxide-semiconductor Q5 of C1, the tie point between third capacitance C3 and third metal-oxide-semiconductor Q3 is connected, and described the
The source electrode of five metal-oxide-semiconductor Q5 connects the drain electrode of the 7th metal-oxide-semiconductor Q7, and the source electrode of the first metal-oxide-semiconductor Q1 connects the third metal-oxide-semiconductor Q3
Drain electrode and the 6th metal-oxide-semiconductor Q6 drain electrodes, the drain electrode of the first metal-oxide-semiconductor Q1 connect positive bus-bar+BUS, the 6th metal-oxide-semiconductor
The source electrode of Q6 connects the drain electrode of the 8th metal-oxide-semiconductor Q8, the leakage of the source electrode and the 4th metal-oxide-semiconductor Q4 of the 7th metal-oxide-semiconductor Q7
Pole connects tie point and the first capacitance C1, institute between the first DC power supply DC1, the second DC power supply DC2
State the tie point between the second capacitance C2, the source electrode of the source electrode of the 8th metal-oxide-semiconductor Q8 and the 4th metal-oxide-semiconductor Q4, described
The drain electrode of two metal-oxide-semiconductor Q2 is connected, source electrode connection the positive bus-bar+BUS, the first metal-oxide-semiconductor Q1 of the second metal-oxide-semiconductor Q2, described
Second metal-oxide-semiconductor Q2, the third metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6,
The 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8 grid be separately connected the drive module, the drive module connects institute
Control module is stated, the tie point between the 5th metal-oxide-semiconductor Q5 and the 7th metal-oxide-semiconductor Q7 connects an input of the filter
End, the tie point between the 6th metal-oxide-semiconductor Q6 and the 8th metal-oxide-semiconductor Q8 pass through the equivalent inductance L1 connections filtering
Another input terminal of device.
Operation principle:
Refering to Fig. 8, if DC1=V1, DC2=DC3=V2, then this circuit just has previous embodiment one, embodiment two
Each circuit and level, therefore can be there are five circuit, i.e. DC1, DC2, D3, DC1+DC2, DC1+DC3, and seven electricity are provided
It puts down, i.e.+V1, V2 (DC3), V1+V2 ,-V1 ,-V2 (DC2) ,-V1-V2 and " 0 ".It is formed using each switching tube in circuit aforementioned
Level loop described in embodiment one, the operation principle of embodiment two, be not repeated herein.Related exemplary waveforms are such as
Shown in Fig. 9.
Meanwhile the switching tube of the circuit of previous embodiment has negative function, is terminated into reversed power supply in AB, and apply
When corresponding reversed timing control, then reversed power conversion function can be completed.Therefore, the circuit of previous embodiment all has double
To mapping function.
In addition, the circuit of previous embodiment can also access isolation circuit, instead of non-isolation type circuit, isolated power supply is carried out
Positive-going transition, if isolated power supply circuit has negative function, access the isolation circuit integrated circuit also have it is two-way
Mapping function.
Embodiment 4
The present embodiment is with embodiment 1 the difference is that using isolation circuit.
As shown in Figure 10, the isolated form of the present embodiment and the non-isolation type of embodiment 1 are provided with two-way changing function, are isolated
The secondary-side circuitry of type can be full-bridge, can also be half-bridge, can also be full-wave circuit.The inductance of non-isolation type can be single
Inductance can also be two inductance in two-phase, be equivalent to an inductance in the loop.This circuit is four level isolated forms.
Refering to fig. 10, a kind of translation circuit, including the first DC power supply DC1, the second DC power supply DC2, the first capacitance C1,
Second capacitance C2, the first metal-oxide-semiconductor Q1, third metal-oxide-semiconductor Q3, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th
Metal-oxide-semiconductor Q8, drive module, control module, isolating transformer circuit and secondary-side circuitry, the first DC power supply DC1 with
The second DC power supply DC2, the first capacitance C1 and the second capacitance C2 are connected on positive bus-bar+BUS and negative busbar-respectively
Between BUS, tie point between the first DC power supply DC1, the second DC power supply DC2 and the first capacitance C1,
The drain electrode of the source electrode, the 5th metal-oxide-semiconductor Q5 of tie point and third metal-oxide-semiconductor Q3 between second capacitance C2 is connected, the 5th MOS
The source electrode of pipe Q5 connects the drain electrode of the 7th metal-oxide-semiconductor Q7, and the source electrode of the first metal-oxide-semiconductor Q1 connects the leakage of the third metal-oxide-semiconductor Q3
Pole and the 6th metal-oxide-semiconductor Q6 drain electrodes, the drain electrode of the first metal-oxide-semiconductor Q1 connect positive bus-bar+BUS, the 6th metal-oxide-semiconductor Q6's
Source electrode connects the drain electrode of the 8th metal-oxide-semiconductor Q8, and the source electrode of the 7th metal-oxide-semiconductor Q7 connects with the source electrode of the 8th metal-oxide-semiconductor Q8
Connect negative busbar-BUS, the first metal-oxide-semiconductor Q1, the third metal-oxide-semiconductor Q3, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6,
The 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8 grid be separately connected the drive module, the drive module connects institute
Control module is stated, the tie point between the 5th metal-oxide-semiconductor Q5 and the 7th metal-oxide-semiconductor Q7 connects the isolating transformer circuit
Primary first end, the tie point between the 6th metal-oxide-semiconductor Q6 and the 8th metal-oxide-semiconductor Q8 connects the isolating transformer
The secondary of the primary second end of circuit, the isolating transformer circuit connects the secondary-side circuitry.
The operation principle of operation principle reference implementation example 1, it will not be described here.
Embodiment 5
As shown in figure 11, the present embodiment and embodiment 2 the difference is that using isolation circuit.This circuit is isolated for four level
Another deformation of type.
Refering to fig. 11, a kind of translation circuit, including the first DC power supply DC1, the second DC power supply DC2, the first capacitance C1,
Second capacitance C2, the second metal-oxide-semiconductor Q2, the 4th metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th
Metal-oxide-semiconductor Q8, drive module, control module, isolating transformer circuit and secondary-side circuitry, the first DC power supply DC1 with
The second DC power supply DC2, the first capacitance C1 and the second capacitance C2 are connected on positive bus-bar+BUS and negative busbar-respectively
Between BUS, tie point between the first DC power supply DC1, the second DC power supply DC2 and the first capacitance C1,
The drain electrode of tie point and the 4th metal-oxide-semiconductor Q4 between second capacitance C2, the source electrode of the 7th metal-oxide-semiconductor Q7 are connected, the 7th MOS
The drain electrode of pipe Q7 connects the source electrode of the 5th metal-oxide-semiconductor Q5, the source electrode connection negative busbar-BUS of the second metal-oxide-semiconductor Q2, described
The drain electrode of second metal-oxide-semiconductor Q2 connects the source electrode of the source electrode and the 8th metal-oxide-semiconductor Q8 of the 4th metal-oxide-semiconductor Q4, the 8th MOS
The drain electrode of pipe Q8 connects the source electrode of the 6th metal-oxide-semiconductor Q6, and the drain electrode of the 5th metal-oxide-semiconductor Q5 is with the 6th metal-oxide-semiconductor Q6's
Drain electrode connection positive bus-bar+BUS, the second metal-oxide-semiconductor Q2, the 4th metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, the described 6th
Metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8 grid be separately connected the drive module, the driving mould
Block connects the control module, and the tie point connection between the 5th metal-oxide-semiconductor Q5 and the 7th metal-oxide-semiconductor Q7 is described to be isolated change
The primary first end of transformer circuits, tie point connection between the 6th metal-oxide-semiconductor Q6 and the 8th metal-oxide-semiconductor Q8 it is described every
The secondary of primary second end from transformer circuit, the isolating transformer circuit connects the secondary-side circuitry.Described time
Grade lateral circuit can be full-bridge or half-bridge or full-wave rectifying circuit.
The operation principle of operation principle reference implementation example 2, it will not be described here.
Embodiment 6
As shown in figure 12, the present embodiment and embodiment 3 the difference is that using isolation circuit.This circuit is isolated for six level
Type.
Refering to fig. 12, a kind of translation circuit, including the first DC power supply DC1, the second DC power supply DC2, third direct current
Source DC3, the first capacitance C1, the second capacitance C2, third capacitance C3, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3,
Four metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8, drive module, control module,
Isolating transformer circuit and secondary-side circuitry, the second DC power supply DC2, the first DC power supply DC1 and described the
Three DC power supply DC3 successively, the second capacitance C2, the first capacitance C1 and third capacitance C3 be connected on negative mother respectively successively
Between line-BUS and positive bus-bar+BUS, tie point between the first DC power supply DC1, the third DC power supply DC3 with
The drain electrode of the source electrode, the 5th metal-oxide-semiconductor Q5 of tie point and third metal-oxide-semiconductor Q3 between the first capacitance C1, third capacitance C3
It is connected, the source electrode of the 5th metal-oxide-semiconductor Q5 connects the drain electrode of the 7th metal-oxide-semiconductor Q7, described in the source electrode connection of the first metal-oxide-semiconductor Q1
The drain electrode of third metal-oxide-semiconductor Q3 and the 6th metal-oxide-semiconductor Q6 drain electrodes, the drain electrode of the first metal-oxide-semiconductor Q1 connect positive bus-bar+BUS, institute
The source electrode for stating the 6th metal-oxide-semiconductor Q6 connects the drain electrode of the 8th metal-oxide-semiconductor Q8, the source electrode and the described 4th of the 7th metal-oxide-semiconductor Q7
The drain electrode of metal-oxide-semiconductor Q4 connects tie point between the first DC power supply DC1, the second DC power supply DC2 and described the
Tie point between one capacitance C1, the second capacitance C2, the source electrode of the 8th metal-oxide-semiconductor Q8 and the 4th metal-oxide-semiconductor Q4's
The drain electrode of source electrode, the second metal-oxide-semiconductor Q2 is connected, the source electrode of the second metal-oxide-semiconductor Q2 connection positive bus-bar+BUS, and described first
It is metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the third metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4, the 5th metal-oxide-semiconductor Q5, described
6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8 grid be separately connected the drive module, the drive
Dynamic model block connects the control module, the tie point connection between the 5th metal-oxide-semiconductor Q5 and the 7th metal-oxide-semiconductor Q7 it is described every
Primary first end from transformer circuit, what the tie point between the 6th metal-oxide-semiconductor Q6 and the 8th metal-oxide-semiconductor Q8 connected
The secondary of primary second end, the isolating transformer circuit connects the secondary-side circuitry.The secondary-side circuitry can be
Full-bridge or half-bridge or full-wave rectifying circuit.
The operation principle of operation principle reference implementation example 2, it will not be described here.
It is equivalent as shown in fig. 13 that the isolating transformer circuit of the utility model embodiment can also be but not limited to use
Flexible circuit.In short, the isolation circuit in the utility model can directly use various conventional isolation circuits, can also be soft
The circuit of switch, the mode of texturing of various isolation circuits include that the transformer portion in resonant tank is arranged to magnetizing inductance
The mode being in parallel as two components with transformer, and inductance setting is formed into the modes such as equivalent inductance at load,
Etc., belong to the scope of protection of the utility model.
The above content is specific/preferred embodiment further detailed description of the utility model is combined, no
It can assert that the specific implementation of the utility model is confined to these explanations.For the common skill of the utility model technical field
For art personnel, without departing from the concept of the premise utility, the embodiment that these have been described can also be made
Some replacements or modification, and these are substituted or variant all shall be regarded as belonging to the scope of protection of the utility model.
Claims (9)
1. a kind of translation circuit, which is characterized in that including the first DC power supply, third DC power supply, the first capacitance, third electricity
Appearance, the first metal-oxide-semiconductor, third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control
Module, equivalent inductance and filter, first DC power supply and the third DC power supply, first capacitance and third
Capacitance is connected between positive bus-bar and negative busbar respectively, the connection between first DC power supply, the third DC power supply
Point is connected with the drain electrode of the source electrode, the 5th metal-oxide-semiconductor of tie point and third metal-oxide-semiconductor between first capacitance, third capacitance,
The source electrode of 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, and the source electrode of first metal-oxide-semiconductor connects the third metal-oxide-semiconductor
The drain electrode of drain electrode and the 6th metal-oxide-semiconductor drain electrode, first metal-oxide-semiconductor connects positive bus-bar, the source electrode connection of the 6th metal-oxide-semiconductor
The drain electrode of 8th metal-oxide-semiconductor, the source electrode of the 7th metal-oxide-semiconductor connect negative busbar with the source electrode of the 8th metal-oxide-semiconductor, and described
One metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor
Grid be separately connected the drive module, the drive module connects the control module, the 5th metal-oxide-semiconductor and described the
Tie point between seven metal-oxide-semiconductors connects an input terminal of the filter, between the 6th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor
Tie point another input terminal of the filter is connected by the equivalent inductance.
2. a kind of translation circuit, which is characterized in that including the first DC power supply, the second DC power supply, the first capacitance, the second electricity
Appearance, the second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control
Module, equivalent inductance and filter, first DC power supply and second DC power supply, first capacitance and second
Capacitance is connected between positive bus-bar and negative busbar respectively, the connection between first DC power supply, second DC power supply
Point is connected with the drain electrode of tie point and the 4th metal-oxide-semiconductor between first capacitance, the second capacitance, the source electrode of the 7th metal-oxide-semiconductor,
The drain electrode of 7th metal-oxide-semiconductor connects the source electrode of the 5th metal-oxide-semiconductor, and the source electrode of second metal-oxide-semiconductor connects negative busbar, described
The drain electrode of second metal-oxide-semiconductor connects the source electrode of the source electrode and the 8th metal-oxide-semiconductor of the 4th metal-oxide-semiconductor, the leakage of the 8th metal-oxide-semiconductor
Pole connects the source electrode of the 6th metal-oxide-semiconductor, and the drain electrode of the 5th metal-oxide-semiconductor connects positive bus-bar with the drain electrode of the 6th metal-oxide-semiconductor,
Second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, described
The grid of eight metal-oxide-semiconductors is separately connected the drive module, and the drive module connects the control module, the 5th metal-oxide-semiconductor
Tie point between the 7th metal-oxide-semiconductor connect an input terminal of the filter, the 6th metal-oxide-semiconductor and the described 8th
Tie point between metal-oxide-semiconductor connects another input terminal of the filter by the equivalent inductance.
3. a kind of translation circuit, which is characterized in that including the first DC power supply, the second DC power supply, third DC power supply, first
Capacitance, the second capacitance, third capacitance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th
Metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control module, equivalent inductance and filter, second direct current
Source, first DC power supply and the third DC power supply successively, second capacitance, first capacitance and third capacitance
It is connected between negative busbar and positive bus-bar respectively successively, the connection between first DC power supply, the third DC power supply
Point is connected with the drain electrode of the source electrode, the 5th metal-oxide-semiconductor of tie point and third metal-oxide-semiconductor between first capacitance, third capacitance,
The source electrode of 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, and the source electrode of first metal-oxide-semiconductor connects the third metal-oxide-semiconductor
The drain electrode of drain electrode and the 6th metal-oxide-semiconductor drain electrode, first metal-oxide-semiconductor connects positive bus-bar, the source electrode connection of the 6th metal-oxide-semiconductor
The source electrode of the drain electrode of 8th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor connect first direct current with the drain electrode of the 4th metal-oxide-semiconductor
The tie point between tie point and first capacitance, second capacitance between power supply, second DC power supply, it is described
The source electrode of 8th metal-oxide-semiconductor is connected with the drain electrode of the source electrode, second metal-oxide-semiconductor of the 4th metal-oxide-semiconductor, second metal-oxide-semiconductor
Source electrode connects positive bus-bar, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, described the
Five metal-oxide-semiconductors, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor grid be separately connected the drive module,
The drive module connects the control module, described in the tie point connection between the 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor
One input terminal of filter, the tie point between the 6th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor are connected by the equivalent inductance
Another input terminal of the filter.
4. a kind of translation circuit, which is characterized in that including the first DC power supply, the second DC power supply, the first capacitance, the second electricity
Appearance, the first metal-oxide-semiconductor, third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control
Module, isolating transformer circuit and secondary-side circuitry, first DC power supply and second DC power supply, described first
Capacitance and the second capacitance are connected between positive bus-bar and negative busbar respectively, first DC power supply, second DC power supply
Between tie point and first capacitance, the second capacitance between tie point and third metal-oxide-semiconductor source electrode, the 5th metal-oxide-semiconductor
Drain electrode be connected, the source electrode of the 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, described in the source electrode connection of first metal-oxide-semiconductor
The drain electrode of third metal-oxide-semiconductor and the 6th metal-oxide-semiconductor drain electrode, the drain electrode of first metal-oxide-semiconductor connect positive bus-bar, the 6th MOS
The source electrode of pipe connects the drain electrode of the 8th metal-oxide-semiconductor, and the source electrode of the 7th metal-oxide-semiconductor is connect with the source electrode of the 8th metal-oxide-semiconductor
Negative busbar, first metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor,
The grid of 8th metal-oxide-semiconductor is separately connected the drive module, and the drive module connects the control module, and the described 5th
Tie point between metal-oxide-semiconductor and the 7th metal-oxide-semiconductor connects the primary first end of the isolating transformer circuit, and the described 6th
Tie point between metal-oxide-semiconductor and the 8th metal-oxide-semiconductor connects the primary second end of the isolating transformer circuit, the isolation
The secondary of transformer circuit connects the secondary-side circuitry.
5. translation circuit as claimed in claim 4, which is characterized in that the secondary-side circuitry is that full-bridge or half-bridge or all-wave are whole
Current circuit.
6. a kind of translation circuit, which is characterized in that including the first DC power supply, the second DC power supply, the first capacitance, the second electricity
Appearance, the second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control
Module, isolating transformer circuit and secondary-side circuitry, first DC power supply and second DC power supply, described first
Capacitance and the second capacitance are connected between positive bus-bar and negative busbar respectively, first DC power supply, second DC power supply
Between tie point and first capacitance, the second capacitance between tie point and the 4th metal-oxide-semiconductor drain electrode, the 7th metal-oxide-semiconductor
Source electrode be connected, the drain electrode of the 7th metal-oxide-semiconductor connects the source electrode of the 5th metal-oxide-semiconductor, the source electrode connection of second metal-oxide-semiconductor
Negative busbar, the drain electrode of second metal-oxide-semiconductor connect the source electrode of the source electrode and the 8th metal-oxide-semiconductor of the 4th metal-oxide-semiconductor, and described the
The drain electrode of eight metal-oxide-semiconductors connects the source electrode of the 6th metal-oxide-semiconductor, the drain electrode of the 5th metal-oxide-semiconductor and the drain electrode of the 6th metal-oxide-semiconductor
Connect positive bus-bar, second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the described 7th
Metal-oxide-semiconductor, the 8th metal-oxide-semiconductor grid be separately connected the drive module, the drive module connects the control module, institute
State the primary first end that the tie point between the 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor connects the isolating transformer circuit, institute
State the primary second end that the tie point between the 6th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor connects the isolating transformer circuit, institute
The secondary for stating isolating transformer circuit connects the secondary-side circuitry.
7. translation circuit as claimed in claim 6, which is characterized in that the secondary-side circuitry is that full-bridge or half-bridge or all-wave are whole
Current circuit.
8. a kind of translation circuit, which is characterized in that including the first DC power supply, the second DC power supply, third DC power supply, first
Capacitance, the second capacitance, third capacitance, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th
Metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, drive module, control module, isolating transformer circuit and secondary-side circuitry, it is described
Second DC power supply, first DC power supply and the third DC power supply successively, second capacitance, first capacitance
It is connected between negative busbar and positive bus-bar respectively successively with third capacitance, first DC power supply, the third DC power supply
Between tie point and first capacitance, third capacitance between tie point and third metal-oxide-semiconductor source electrode, the 5th metal-oxide-semiconductor
Drain electrode be connected, the source electrode of the 5th metal-oxide-semiconductor connects the drain electrode of the 7th metal-oxide-semiconductor, described in the source electrode connection of first metal-oxide-semiconductor
The drain electrode of third metal-oxide-semiconductor and the 6th metal-oxide-semiconductor drain electrode, the drain electrode of first metal-oxide-semiconductor connect positive bus-bar, the 6th MOS
The source electrode of pipe connects the drain electrode of the 8th metal-oxide-semiconductor, and the source electrode of the 7th metal-oxide-semiconductor is connect with the drain electrode of the 4th metal-oxide-semiconductor
Between tie point and first capacitance, second capacitance between first DC power supply, second DC power supply
Tie point, the source electrode of the 8th metal-oxide-semiconductor is connected with the drain electrode of the source electrode, second metal-oxide-semiconductor of the 4th metal-oxide-semiconductor, institute
State the source electrode connection positive bus-bar of the second metal-oxide-semiconductor, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third metal-oxide-semiconductor, described the
Four metal-oxide-semiconductors, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor grid be separately connected
The drive module, the drive module connects the control module, between the 5th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor
Tie point connects the primary first end of the isolating transformer circuit, between the 6th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor
The secondary of the primary second end of tie point connection, the isolating transformer circuit connects the secondary-side circuitry.
9. translation circuit as claimed in claim 8, which is characterized in that the secondary-side circuitry is that full-bridge or half-bridge or all-wave are whole
Current circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820325875.2U CN208001234U (en) | 2018-03-09 | 2018-03-09 | A kind of translation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820325875.2U CN208001234U (en) | 2018-03-09 | 2018-03-09 | A kind of translation circuit |
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| Publication Number | Publication Date |
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| CN208001234U true CN208001234U (en) | 2018-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820325875.2U Expired - Fee Related CN208001234U (en) | 2018-03-09 | 2018-03-09 | A kind of translation circuit |
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| CN (1) | CN208001234U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111082642A (en) * | 2019-12-23 | 2020-04-28 | 科华恒盛股份有限公司 | Power supply network and multi-level circuit thereof and combined multi-level circuit |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111082642A (en) * | 2019-12-23 | 2020-04-28 | 科华恒盛股份有限公司 | Power supply network and multi-level circuit thereof and combined multi-level circuit |
| CN111082642B (en) * | 2019-12-23 | 2022-03-11 | 科华恒盛股份有限公司 | Power supply network and multi-level circuit thereof and combined multi-level circuit |
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