CN207995051U - Asymmetric waveform generation circuit and ionic migration spectrometer - Google Patents
Asymmetric waveform generation circuit and ionic migration spectrometer Download PDFInfo
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- CN207995051U CN207995051U CN201721470906.5U CN201721470906U CN207995051U CN 207995051 U CN207995051 U CN 207995051U CN 201721470906 U CN201721470906 U CN 201721470906U CN 207995051 U CN207995051 U CN 207995051U
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- 238000009791 electrochemical migration reaction Methods 0.000 title claims abstract description 24
- 230000005012 migration Effects 0.000 claims description 27
- 238000013508 migration Methods 0.000 claims description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 6
- 238000004458 analytical method Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001871 ion mobility spectroscopy Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000037230 mobility Effects 0.000 description 3
- 239000002575 chemical warfare agent Substances 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000000383 hazardous chemical Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011155 quantitative monitoring Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
The utility model is related to carry out analysis determining technology field to biochemical substances, more particularly to a kind of asymmetric waveform generation circuit and ionic migration spectrometer.The asymmetric waveform generation circuit includes：Signal input circuit for inputting random waveform.The driving circuit being electrically connected with the signal input circuit.The Waveform generating circuit being electrically connected with the driving circuit, the Waveform generating circuit is for generating asymmetrical square-wave waveform.The asymmetric waveform generation circuit can generate amplitude, high-frequency and duty ratio, positive and negative Amplitude Ration more preferably asymmetric square waves waveform.
Description
Technical field
The utility model is related to carry out analysis determining technology field to biochemical substances, more particularly to a kind of asymmetric waveform
Generation circuit and ionic migration spectrometer.
Background technology
Currently, the asymmetric ion mobility spectrometry of super high field (Ultra High Field Asymmetric Ion
Mobility Spectrometry, UHFAIMS) technology is developed rapidly.UHFAIMS be it is a kind of for hazardous chemical,
The detection technique of pollutant and the chip-scale of chemical warfare agent detection, compares conventional ion migration spectrum and gas chromatography-mass spectrum, gold
Belong to oxide semiconductor sensing etc. for detection techniques, the technology can be used as above-mentioned substance is monitored in real time under complex environment it is excellent
Selecting technology.However, the further numerous hazardous chemicals of type, pollutant, chemical warfare agent and the more complicated applied field of situation
It closes, to the performance of the sensitivity of UHFAIMS, resolution ratio etc., more stringent requirements are proposed, faces these requirements, the technology is still
So seem not nearly enough maturation.Wherein, it improves the sensitivity of UHFAIMS and resolution ratio needs to improve asymmetric waveform generation circuit
Design.
Utility model content
Based on this, it is necessary to be directed to the sensitivity of UHFAIMS and the problem that resolution ratio is relatively low, provide a kind of asymmetric waveform
Generation circuit and ionic migration spectrometer.
A kind of asymmetric waveform generation circuit, including：Signal input circuit；The drive being electrically connected with the signal input circuit
Dynamic circuit；The Waveform generating circuit being electrically connected with the driving circuit, the Waveform generating circuit is for generating asymmetrical side
Wave waveform.
In one embodiment, the Waveform generating circuit includes：First waveform generation circuit parallel with one another and second
Waveform generating circuit；
The first waveform generation circuit includes：MOSFET half-bridges hybrid circuit, the first capacitance, first resistor；
The first end of the MOSFET half-bridges hybrid circuit connects input voltage；
First capacitance and the first resistor be connected in series in the MOSFET half-bridges hybrid circuit second end and
Between the third end of the MOSFET half-bridges hybrid circuit；
The third end of the MOSFET half-bridges hybrid circuit is grounded.
In one embodiment, the MOSFET half-bridges hybrid circuit includes the first power amplifier, first switch pipe, the
Two power amplifiers and second switch pipe；
The first output end electrical connection of the input terminal and the driving circuit of first power amplifier, first work(
The input terminal of the output end of rate amplifier and the first switch pipe is electrically connected；
The second output terminal electrical connection of the input terminal and the driving circuit of second power amplifier, second work(
The input terminal of the output end of rate amplifier and the second switch pipe is electrically connected；
First output end of the first switch pipe is the first end of the MOSFET half-bridges hybrid circuit, and described first opens
The first output end parallel connection of the second output terminal of pipe, third output end and the second switch pipe is closed as the MOSFET half-bridges
The second end of hybrid circuit；
The second output terminal of the second switch pipe and the parallel connection of third output end are as the MOSFET half-bridges hybrid circuit
Third end.
In one embodiment, the first switch pipe and the second switch pipe are gallium nitride switching tube.
In one embodiment, the first waveform generation circuit is identical with the structure of second Waveform generating circuit.
A kind of ionic migration spectrometer, including：Migration tube, voltage compensating circuit and described in any one of the above embodiments asymmetric
Waveform generating circuit；
The migration tube is parallel to two output ends of the Waveform generating circuit；
The voltage compensating circuit and Waveform generating circuit electrical connection；
The migration tube is parallel to high-voltage output terminal and the low-voltage output end of the voltage compensating circuit.
In one embodiment, the MEMS chip that the migration tube is 35 microns.
In one embodiment, the voltage compensating circuit includes：Offset voltage input unit, high voltage end output auxiliary
Circuit and low-voltage end export auxiliary circuit；
The high-pressure side of the offset voltage input unit is electrically connected with high voltage end output auxiliary circuit, the compensation
The low-pressure end of voltage input device is electrically connected with low-voltage end output auxiliary circuit.
In one embodiment, the high voltage end output auxiliary circuit includes：
Be connected on the voltage compensating circuit high-voltage output terminal and the offset voltage input unit high-pressure side it
Between the first inductance；And
It is connected on the high-voltage output terminal of the voltage compensating circuit and the second capacitance of ground terminal.
In one embodiment, the low-voltage end output auxiliary circuit includes：
Be connected on the voltage compensating circuit low-voltage output end and the offset voltage input unit low-pressure end it
Between the second inductance；And it is connected on the low-voltage output end of the voltage compensating circuit and the third capacitance of ground terminal.
Asymmetric waveform generation circuit described in the utility model includes：Signal for inputting random waveform inputs electricity
Road.The driving circuit being electrically connected with the signal input circuit.The Waveform generating circuit being electrically connected with the driving circuit, it is described
Waveform generating circuit is for generating asymmetrical square-wave waveform.The asymmetric waveform generation circuit can generate amplitude, height
Frequency and duty ratio, positive and negative Amplitude Ration more preferably asymmetric square waves waveform.
Description of the drawings
Fig. 1 is the circuit diagram of asymmetric waveform generation circuit described in one embodiment；
Fig. 2 a and Fig. 2 b are the pulse signal that asymmetric waveform generation circuit generates described in one embodiment；
Fig. 3 is the circuit diagram of ionic migration spectrometer described in one embodiment.
Drawing reference numeral explanation：
Asymmetric waveform generation circuit 10；
Signal input circuit 100；
Driving circuit 200；
Waveform generating circuit 300；
First waveform generation circuit 301；
Second Waveform generating circuit 302；
MOSFET half-bridges hybrid circuit 310；
First power amplifier 311；
First switch pipe 312；
Second power amplifier 313；
Second switch pipe 314；
First capacitance 320；
First resistor 330；
Migration tube 400；
Voltage compensating circuit 500；
Offset voltage input unit 510；
High voltage end exports auxiliary circuit 520；
First inductance 521；
Second capacitance 522；
Low-voltage end exports auxiliary circuit 530；
Second inductance 531；
Third capacitance 532；
Specific implementation mode
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
The asymmetric waveform generation circuit and ionic migration spectrometer of the utility model is further described in example.It should be appreciated that herein
Described specific embodiment only to explain the utility model, is not used to limit the utility model.
Core component its migration tube in the asymmetric ion mobility spectrometry of super high field (UHFAIMS).It is applied at migration tube both ends
Add the voltage (or " radio-frequency voltage ") of an alternation, the electric field (or " radio frequency electrical of alternation can be generated in the raceway groove of migration tube
").Can thus ion be made to be migrated in channels along certain track.Can include different ions in sample to be tested, from
The features such as body quality, the quantity of electric charge also may be different.In order to all detect these ions as much as possible, need to carry out these ions
Preferable separation.By adjusting the value of the parameters of rf electric field (voltage) and the compensating electric field (voltage) being superimposed therewith,
Different ions can be made to leave migration tube and eventually arrived on detector, signal is generated.The ion of migration tube can not be left then
It hits to migration tube pole plate, not will produce signal, separation and detection to different ions are realized with this.Usually, radio frequency electrical
The amplitude of field is bigger, and frequency is higher, and waveform quality is better, then the resolution ratio of ion detection and sensitivity are higher, separation and detection
Effect is better.
As detection environment becomes increasingly complex, there is related parameter to separation parameter, especially radio-frequency voltage, it is desirable that higher.
Requirement accordingly to asymmetric waveform generation circuit is also higher.The waveform of radio-frequency voltage generally comprises double sinusoidal, semisinusoidals
With three kinds of square wave, theoretical and experiment all shows that square-wave voltage is the most efficient.But the generation of square-wave voltage is equally but the most tired
The square-wave voltage of difficulty, especially amplitude, high-frequency, high quality.
The purpose of this utility model is to provide a kind of asymmetric waveform generation circuit 10, for generating amplitude, high frequency
The parameters such as rate, high quality and duty ratio, positive and negative Amplitude Ration more preferably square-wave waveform voltage.And the asymmetric waveform is generated into electricity
Road 10 is applied in ionic migration spectrometer 20.It selects GaN as switching device, further expands GaN switching devices described non-
The application range of balancing waveform generation circuit 10, GaN devices possess in asymmetric waveform generation circuit 10 more widely answers
Use foreground.GaN switching devices are made not only to can be only used for mobile phone, personal computer, high-performance computer, work station, thunder
It reaches, artificial satellite etc. and electronics, communicate etc. in the related equipment in fields, additionally it is possible to grow a lot for this tools of UHFAIMS
In the chemical detection instrument of potentiality.Radio-frequency voltage caused by the utility model is applied to the migration tube both ends of UHFAIMS.
So that UHFAIM can realize that the high-resolution regulation and control of separation parameter, the comprehensive overall performance for promoting the ionic migration spectrometer 20 are (special
Be not resolution ratio, sensitivity etc.), realize multi-chemical accurately identify and Quantitative Monitoring.
The technical solution of the utility model can promote the further micromation of the entirety of the ionic migration spectrometer 20.In the past
UHFAIMS in, the volume of asymmetric waveform generation circuit become restrict that UHFAIMS integrally further reduces it is important because
Element.For asymmetric waveform generation circuit used in the more previous UHFAIMS of the utility model, circuit own vol will more
Small, one of major reason is：GaN devices have relatively high critical breakdown electric field intensity, make device given
Under breakdown voltage, the size of device can be made smaller, thus entire circuit can also be made smaller.
Referring to Fig. 1, the asymmetric waveform generation circuit 10 provided includes：Signal input circuit 100, driving circuit
200 and Waveform generating circuit 300.The asymmetric waveform generation circuit 10 can generate amplitude, high-frequency and duty ratio, just
The voltage of negative Amplitude Ration more preferably asymmetric square waves waveform.The asymmetric waveform generation circuit 10 can at least bear hundreds of volts
High pressure.The asymmetric waveform generation circuit 10 can bear tens of megahertzs of frequency.The asymmetric waveform generation circuit 10
Duty ratio and the superior waveform of positive and negative Amplitude Ration can be generated.
The signal input circuit 100 can coordinate voltage signal of the signal input apparatus for inputting random waveform.Than
Such as：The voltage signal of input can be periodically variable electric signal or the electric signal of aperiodicity change.Can be sinusoidal
Wave, cosine wave, square wave, triangular wave etc..
The driving circuit 200 is electrically connected with the signal input circuit 100, for driving the Waveform generating circuit
300 generate corresponding waveform.It is integrated that binary channels standard isolating device may be used in the driving circuit 200.The driving circuit
200 can improve the quality of voltage waveform occurred.
Waveform generating circuit 300 is electrically connected with the driving circuit 200.The Waveform generating circuit 300 is non-for generating
Symmetrical square-wave waveform.
In one embodiment, the Waveform generating circuit 300 includes：First waveform generation circuit 301 parallel with one another
With the second Waveform generating circuit 302.In one embodiment, the first waveform generation circuit 301 and second waveform production
The structure of raw circuit 302 is identical.
The first waveform generation circuit 301 includes：MOSFET half-bridges hybrid circuit 310, first the 320, first electricity of capacitance
Resistance 330.The first end of the MOSFET half-bridges hybrid circuit 310 connects input voltage.First capacitance 320 and described first
Resistance 330 is connected to after connecting between the second end and third end of the MOSFET half-bridges hybrid circuit 310.The MOSFET half
The third end of bridge hybrid circuit 310 is grounded.MOSFET half-bridges hybrid circuit 310 is electrically connected with the driving circuit 200.This reality
Apply example and neutralize function, the driving circuit 200 and the MOSFET half-bridges hybrid circuit 310 are integrated can reduce it is described non-right
Claim the parasitic parameter of Waveform generating circuit 10 so that switching delay is asked alternatively up and down caused by the difference of wiring and external device
Topic is preferably solved, and circuit integrity energy is improved.The driving circuit 200 and the MOSFET half-bridges hybrid circuit 310
It is integrated to reduce the distance between component, reduce the parameters such as dead resistance, parasitic capacitance, parasitic inductance.Metal-oxide
Semiconductor field effect transistor, abbreviation metal-oxide half field effect transistor (Metal-Oxide-Semiconductor Field-
Effect Transistor, MOSFET) it is a kind of field-effect transistor that can be widely used in analog circuit and digital circuit
(field-effect transistor).MOSFET is different according to the polarity of its work carrier, can be divided into " N-type " and " P
The two types of type ", also commonly known as NMOSFET and PMOSFET, other referred to as can also be including NMOS, PMOS etc..
In one embodiment, the MOSFET half-bridges hybrid circuit 310 is opened including the first power amplifier 311, first
Close pipe 312, the second power amplifier 313 and second switch pipe 314.
The output end electrical connection of the input terminal and the driving circuit 200 of first power amplifier 311, it is described
The input terminal of the output end of first power amplifier 311 and the first switch pipe 312 is electrically connected.
Another output end electrical connection of the input terminal and the driving circuit 200 of second power amplifier 313, institute
State the input terminal electrical connection of the output end and the second switch pipe 314 of the second power amplifier 313.
First output end of the first switch pipe 312 is the first end of the MOSFET half-bridges hybrid circuit 310, described
First output end parallel connection conduct of the second output terminal, third output end and the second switch pipe 314 of first switch pipe 312
The second end of the MOSFET half-bridges hybrid circuit 310.
The second output terminal of the second switch pipe 314 and the parallel connection of third output end mix electricity as the MOSFET half-bridges
The third end on road 310.
In the present embodiment, the concrete structure of the MOSFET half-bridges hybrid circuit 310 is given.The MOSFET half-bridges
It is convenient that the structure that hybrid circuit 310 designs is simply, circuit is realized.
In one embodiment, the first switch pipe 312 and the second switch pipe 314 are that gallium nitride (GaN) is opened
Guan Guan.After first generation semiconductor (such as Si, Ge), the second band semiconductor (such as GaAs, InP, InSb, GaAsAl, GaAsP),
There is the third generation semi-conducting material using GaN as representative (other include SiC, ZnO, AlN etc.).Compared to preceding two generations material,
GaN has the characteristics that energy gap is big, critical breakdown electric field is high, thermal conductivity is high, electron mobility is high and saturated electrons speed is high,
It is a kind of suitable for high pressure, high frequency, high power, high temperature and the high semi-conducting material of radioresistance grade, current various answer can be met
With various requirements of occasion.The asymmetric waveform generation circuit 10 is enable to generate high-amplitude the switching device of GaN material
The voltage of value, high-frequency and duty ratio, positive and negative Amplitude Ration more preferably asymmetric square waves waveform.
Fig. 2 a and Fig. 2 b are please referred to, showing for two kinds of pulse signals that the asymmetric waveform generation circuit 10 generates is provided
It is intended to.It is appreciated that the pulse that the asymmetric waveform generation circuit 10 can generate is not limited to shown in Fig. 2 a and Fig. 2 b,
According to the ionic migration spectrometer can set.
The concrete operating principle of the utility model：
(1) square-wave signal occurs and inputs.
Signal, which occurs, for square wave to use FPGA, DSP, DDS to generate, and since signal amplitude is smaller, square wave output can be with
Close to ideal value.Simultaneously as using the driving circuit 200 so that the inconsistency between different accesses substantially reduces.It adopts
The scheme integrated with the driving circuit 200 and the MOSFET half-bridges hybrid circuit 310, reduces parasitic parameter so that wiring
The problem of causing switching delay alternatively up and down with the difference of external device has obtained better solution.
(2) driving stage signal occurs.The grid miller capacitance design external electrical for high-pressure MOS switch is needed in design
Road carries out abatement and LCR matchings, that is, setting first capacitance 320 and the first resistor 330.
Involved in the utility model to the migration tube 400 use small―gap suture migrating channels, although required point
It is increased considerably from electric field, GaN switching tubes itself also have higher disruptive field intensity, but the voltage of practically necessary application can
Need not very high (several kV need to be reached in the past, hundreds of V are only needed in the utility model), this point is conducive to the asymmetry of the utility model
The generation of square wave is conducive to the waveform quality for improving square wave occurred, while being also beneficial to the further contracting of GaN device size
It is small.In addition, the first switch pipe 312 and the second switch pipe 314 select GaN switching tubes, can generate amplitude,
High-frequency, high quality square wave improve separating effect of the UHFAIMS chips to ion, to improve performance, especially resolution ratio.
GaN switching tube carrier mobilities are upper with nanosecond order much larger than conventional metal-oxide semiconductor (MOS) (MOS) transistor
Rise edge.The high-frequency electric field that tens of megahertzs of this tolerable will greatly reduce and neutralize loss caused by ionic agitation, improves circuit and is
To the comprehensive performance of instrument.
Referring to Fig. 3, a kind of ionic migration spectrometer, including：Asymmetric waveform generation circuit 10 described in any one of the above embodiments,
Migration tube 400 and voltage compensating circuit 500.
The migration tube 400 is parallel to two output ends of the Waveform generating circuit 300.The voltage compensating circuit 500
It is electrically connected with the Waveform generating circuit 300.The high voltage that the migration tube 400 is parallel to the voltage compensating circuit 500 is defeated
Outlet and low-voltage output end.
The signal input circuit 100 inputs for signal, for inputting certain given voltage signal.The driving circuit
200 may be used binary channels standard isolating chip.The driving circuit 200 is electrically connected with the signal input circuit 100, is used for
Receive the input signal of the signal input circuit.The driving circuit 200 is electrically connected with the Waveform generating circuit 300, also
For driving the subsequent Waveform generating circuit to generate asymmetrical square-wave waveform.The Waveform generating circuit 300 includes two
A MOSFET half-bridges hybrid circuit (GaN switching tubes) and migration tube (MEMS chip).MOSFET half-bridge mixing portions are for occurring
The square-wave voltage for reaching requirement (mainly waveform quality) can be applied to MEMS chip two after reaching the square-wave voltage generation of requirement
End.The Waveform generating circuit 300 is electrically connected with the subsequent voltage compensating circuit 500.Wherein, the voltage compensating circuit
500 be direct current importation, for generating offset voltage.Above-mentioned square-wave voltage, offset voltage are applied to MEMS chip two simultaneously
End.
In one embodiment, the MEMS chip that the migration tube 400 is 35 microns.With the development of science and technology, described move
Moving the size of pipe 400 also more can refine and be miniaturized.It is appreciated that the migration tube 400 can select other models
Or size.
In one embodiment, the voltage compensating circuit 500 includes：Offset voltage input unit 510, high voltage end are defeated
Go out auxiliary circuit 520 and low-voltage end output auxiliary circuit 530.The concrete form of the offset voltage input unit 510 is again
Specific restriction is not sat, can be the various devices for providing voltage.
The high-pressure side of the offset voltage input unit 510 is electrically connected with high voltage end output auxiliary circuit 520, institute
The low-pressure end for stating offset voltage input unit 510 is electrically connected with low-voltage end output auxiliary circuit 530.
In one embodiment, the high voltage end output auxiliary circuit 520 includes：It is connected on the voltage compensating circuit
The first inductance 521 between 500 high-voltage output terminal and the high-pressure side of the offset voltage input unit 510 and it is connected on institute
State the high-voltage output terminal of voltage compensating circuit 500 and the second capacitance 522 of ground terminal.In the present embodiment, first inductance
521 and the setting of second capacitance 522 mainly complete stabilization of the voltage compensating device 510 to the migration tube 400
Offset voltage input.
In one embodiment, the low-voltage end output auxiliary circuit 530 includes：It is connected on the voltage compensating circuit
The second inductance 531 between 500 low-voltage output end and the low-pressure end of the offset voltage input unit 510 and it is connected on institute
State the low-voltage output end of voltage compensating circuit 500 and the third capacitance 532 of ground terminal.In the present embodiment, second inductance
531 and the setting of the third capacitance 532 mainly complete stabilization of the voltage compensating device 510 to the migration tube 400
Offset voltage input.
Reduce the presence of parasitic capacitance in the asymmetric waveform generation circuit 10 provided by the utility model so that on
It rises along reduction.The material of first switch pipe 312 and the second switch pipe 314 described in the asymmetric waveform generation circuit 10
Selection be also a problem needed to be considered.It chooses in which kind of material relationships to the asymmetric waveform generation circuit 10 and switchs
Manage itself working performance quality and to applied field properly should be able to power power, generated to influence the asymmetric waveform
The working performance and adaptability of circuit 10 or even the entire ionic migration spectrometer 20.The asymmetric waveform generation circuit
More semi-conducting material is used in 10, if semi-conducting material is difficult to meet high breakdown electric field, thermal conductivity height, radiation resistance
The requirements such as by force, chemical stability is good, then will certainly restrict the performances such as resolution ratio and the sensitivity of the ionic migration spectrometer 20 and refer to
Target further increases.
The size of itself the occupied volumetric spaces of the asymmetric waveform generation circuit 10 can influence the entire ion
The size of 20 volume of mobility spectrometer.And the core component in the ionic migration spectrometer 20：The macro-size of migration tube can now contract
As low as grade, less than one coin-size of overall volume, therefore the volume size of the asymmetric waveform generation circuit 10 becomes
The key factor that restriction 20 overall volume of ionic migration spectrometer is further miniaturized.If the asymmetric waveform generates electricity
The volume on road 10 can not further be miniaturized, then the overall volume of the ionic migration spectrometer 20 is also difficult to further be miniaturized,
To which carrying, the operation to the ionic migration spectrometer 20 bring inconvenience, its application scenario is limited.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (9)
1. a kind of asymmetric waveform generation circuit, which is characterized in that including：
Signal input circuit (100)；
The driving circuit (200) being electrically connected with the signal input circuit (100)；
The Waveform generating circuit (300) being electrically connected with the driving circuit (200), the Waveform generating circuit (300) is for producing
Raw asymmetrical square-wave waveform；
The Waveform generating circuit (300) includes：First waveform generation circuit (301) parallel with one another and the second waveform generate electricity
Road (302)；
The first waveform generation circuit (301) includes：MOSFET half-bridges hybrid circuit (310), the first capacitance (320), first
Resistance (330)；
The first end of the MOSFET half-bridges hybrid circuit (310) connects input voltage；
First capacitance (320) and the first resistor (330) are connected in series in the MOSFET half-bridges hybrid circuit (310)
Second end and the third end of the MOSFET half-bridges hybrid circuit (310) between；
The third end of the MOSFET half-bridges hybrid circuit (310) is grounded.
2. asymmetric waveform generation circuit as described in claim 1, which is characterized in that
The MOSFET half-bridges hybrid circuit (310) includes the first power amplifier (311), first switch pipe (312), the second work(
Rate amplifier (313) and second switch pipe (314)；
The first output end electrical connection of the input terminal and the driving circuit (200) of first power amplifier (311), it is described
The input terminal of the output end of first power amplifier (311) and the first switch pipe (312) is electrically connected；
The second output terminal electrical connection of the input terminal and the driving circuit (200) of second power amplifier (313), it is described
The input terminal of the output end of second power amplifier (313) and the second switch pipe (314) is electrically connected；
First output end of the first switch pipe (312) is the first end of the MOSFET half-bridges hybrid circuit (310), described
First output end parallel connection of the second output terminal, third output end and the second switch pipe (314) of first switch pipe (312) is made
For the second end of the MOSFET half-bridges hybrid circuit (310)；
The second output terminal of the second switch pipe (314) and the parallel connection of third output end are as the MOSFET half-bridges hybrid circuit
(310) third end.
3. asymmetric waveform generation circuit as claimed in claim 2, which is characterized in that the first switch pipe (312) and institute
It is gallium nitride switching tube to state second switch pipe (314).
4. asymmetric waveform generation circuit as claimed in claim 3, which is characterized in that the first waveform generation circuit
(301) identical with the structure of the second Waveform generating circuit (302).
5. a kind of ionic migration spectrometer, which is characterized in that including：Migration tube (400), voltage compensating circuit (500), and as weighed
Profit requires the asymmetric waveform generation circuit (10) described in any one of 1-4；
The migration tube (400) is parallel to two output ends of the Waveform generating circuit (300)；
The voltage compensating circuit (500) and the Waveform generating circuit (300) electrical connection；
The migration tube (400) is parallel to high-voltage output terminal and the low-voltage output end of the voltage compensating circuit (500).
6. ionic migration spectrometer as claimed in claim 5, which is characterized in that the MEMS that the migration tube (400) is 35 microns
Chip.
7. ionic migration spectrometer as claimed in claim 5, which is characterized in that the voltage compensating circuit (500) includes：Compensation
Voltage input device (510), high voltage end output auxiliary circuit (520) and low-voltage end output auxiliary circuit (530)；
The high-pressure side of the offset voltage input unit (510) is electrically connected with high voltage end output auxiliary circuit (520), institute
The low-pressure end for stating offset voltage input unit (510) is electrically connected with low-voltage end output auxiliary circuit (530).
8. ionic migration spectrometer as claimed in claim 7, which is characterized in that the high voltage end output auxiliary circuit (520)
Including：
It is connected on the height of the high-voltage output terminal and the offset voltage input unit (510) of the voltage compensating circuit (500)
The first inductance (521) between pressure side；And
It is connected on the high-voltage output terminal of the voltage compensating circuit (500) and the second capacitance (522) of ground terminal.
9. ionic migration spectrometer as claimed in claim 7, which is characterized in that the low-voltage end output auxiliary circuit (530)
Including：
Be connected on the voltage compensating circuit (500) low-voltage output end and the offset voltage input unit (510) it is low
The second inductance (531) between pressure side；And
It is connected on the low-voltage output end of the voltage compensating circuit (500) and the third capacitance (532) of ground terminal.
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| Application Number | Priority Date | Filing Date | Title |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108173535A (en) * | 2017-11-07 | 2018-06-15 | 中国人民解放军陆军防化学院 | Asymmetric waveform generation circuit and ionic migration spectrometer |
| WO2021148714A1 (en) * | 2020-01-23 | 2021-07-29 | Olfactomics Oy | Arrangement and method for providing a waveform for driving an ion mobility device |
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2017
- 2017-11-07 CN CN201721470906.5U patent/CN207995051U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108173535A (en) * | 2017-11-07 | 2018-06-15 | 中国人民解放军陆军防化学院 | Asymmetric waveform generation circuit and ionic migration spectrometer |
| CN108173535B (en) * | 2017-11-07 | 2024-05-10 | 中国人民解放军陆军防化学院 | Asymmetric waveform generation circuit and ion mobility spectrometer |
| WO2021148714A1 (en) * | 2020-01-23 | 2021-07-29 | Olfactomics Oy | Arrangement and method for providing a waveform for driving an ion mobility device |
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