CN117572189A - Dynamic high-temperature gate bias test circuit and equipment for broadband semiconductor - Google Patents
Dynamic high-temperature gate bias test circuit and equipment for broadband semiconductor Download PDFInfo
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- CN117572189A CN117572189A CN202311578413.3A CN202311578413A CN117572189A CN 117572189 A CN117572189 A CN 117572189A CN 202311578413 A CN202311578413 A CN 202311578413A CN 117572189 A CN117572189 A CN 117572189A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- 238000012360 testing method Methods 0.000 title claims abstract description 116
- 238000005070 sampling Methods 0.000 claims description 44
- 238000010998 test method Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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Abstract
The invention discloses a dynamic high-temperature gate bias test circuit and equipment for a broadband semiconductor, wherein the test circuit comprises a bipolar pulse signal generation circuit, a test sub-circuit and a control circuit, the control circuit is respectively connected with the bipolar pulse signal generation circuit and the test sub-circuit, the bipolar pulse signal generation circuit is used for generating a bipolar pulse signal under the control of the control circuit, the output of the bipolar pulse signal generation circuit is connected with the control end of the broadband semiconductor, and the control circuit is used for controlling the test sub-circuit and is used for short-circuiting the control end and the input end or short-circuiting the input end and the output end; the source list for testing is connected to the control end of the broadband semiconductor and is used for measuring the threshold voltage and leakage current of the control electrode of the broadband semiconductor, so that the accurate test of the parameters of the broadband semiconductor is realized.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a dynamic high-temperature grid bias test circuit and device for a broadband semiconductor.
Background
In recent years, with the explosion of applications such as new energy automobiles and charging piles, the third generation wide band gap semiconductors have been developed in a breakthrough manner. Among them, silicon carbide (SiC) and gallium nitride (GaN) are most attractive as the most representative broadband semiconductor materials, and the excellent high frequency characteristics of broadband semiconductors allow the volume of these passive devices to be reduced, and in order to alleviate EMI problems, the application layout based on broadband semiconductors should be more compact, thereby reducing the system size and increasing the power density. The more excellent high temperature performance of the broadband semiconductor combined with its more compact layout, the operating conditions tend to be at higher ring temperatures.
Because of the large differences in properties between broadband semiconductor materials and conventional silicon materials, many broadband semiconductor manufacturers no longer provide as many reliability metrics in the specification as silicon-based semiconductors, including: important parameters are Safe Operating Area (SOA), avalanche rating (avalanching), dv/dt, etc.
Taking SiC as an example, due to the difference of material characteristics, siC has poorer gate reliability compared with Si-based devices, the interface state density of SiC/SiO2 is much higher than that of Si/SiO2, and interface state charge traps capture and release carriers in the process of switching on and off the devices, so that the threshold voltage of SiC MOSFETs drift, which is much worse than that of Si devices. SiC has a lower barrier height than Si, and carriers in the channel more easily pass through the barrier to the oxide layer, causing reliability problems.
The conventional high temperature bias test (High Temperature Gate Bias, HTGB for short) has failed to meet the requirements of efficient and accurate testing for the properties of broadband semiconductor materials and the high temperature and high frequency conditions applied to broadband semiconductors.
The dynamic high temperature gate bias test (Dynamic High Temperature Gate Bias, abbreviated as D-HTGB) can simulate the state of the broadband semiconductor under the real work, and the threshold voltage drift problem can be more prominent under the condition, so the dynamic HTGB has more test significance.
How to perform dynamic high-temperature gate bias test on a broadband semiconductor is a problem to be solved at present.
Disclosure of Invention
The invention aims to provide a dynamic high-temperature gate bias test circuit and equipment for a broadband semiconductor, which are used for determining the gate voltage regulation range of the broadband semiconductor by setting positive and negative voltages of bipolar pulse signals, arranging a switch between a test sub-circuit and the output end of the bipolar pulse signals, and disconnecting the bipolar pulse signals for testing after the bipolar pulse signals are applied to the broadband semiconductor, so that the test precision is ensured.
In a first aspect, the above object of the present invention is achieved by the following technical solutions:
the dynamic high-temperature gate bias test circuit for the broadband semiconductor comprises a bipolar pulse signal generation circuit, a test sub-circuit and a control circuit, wherein the control circuit is respectively connected with the bipolar pulse signal generation circuit and the test sub-circuit, the bipolar pulse signal generation circuit is used for generating a bipolar pulse signal under the control of the control circuit, the output of the bipolar pulse signal generation circuit is connected with the control end of the broadband semiconductor, and the control circuit is used for controlling the test sub-circuit and is used for short-circuiting the control end and the input end or short-circuiting the input end and the output end; the source list for test is connected to the control end of the broadband semiconductor and is used for measuring the threshold voltage and leakage current of the control electrode of the broadband semiconductor.
The invention is further provided with: the test sub-circuit comprises two control switches, one end of a switch of the first control switch is connected with the control end of the broadband semiconductor, and the other end of the switch is connected with the input end of the broadband semiconductor; one end of a switch of the second control switch is connected with the input end of the broadband semiconductor, and the other end of the switch is connected with the output end of the broadband semiconductor; the control end of the first control switch and the control end of the second control switch are respectively connected to the control circuit.
The invention is further provided with: the bipolar pulse signal generating circuit comprises a bipolar power supply, a driving circuit, a sampling operation circuit and an output circuit, wherein the positive voltage output end of the bipolar power supply is connected with one end of the sampling operation circuit, the other end of the sampling operation circuit is connected to the output circuit, the output of the sampling operation circuit is connected to the input of the driving circuit, the output of the driving circuit is connected to the output circuit, the negative voltage output end of the bipolar power supply is connected to the output circuit, and the output circuit is used for outputting a bipolar pulse signal according to a control signal of the driving circuit.
The invention is further provided with: the sampling operation circuit comprises a sampling circuit and an operation circuit, one end of the sampling circuit is connected with the positive output end of the bipolar power supply and one end of the operation circuit, the other end of the sampling circuit is connected with the other end of the operation circuit and one end of the output circuit, and the output of the operation circuit is connected to the driving circuit and used for carrying out operation according to a sampling result and outputting the operation result to the driving circuit.
The invention is further provided with: the output circuit comprises two power tubes, the control electrode of each power tube is respectively connected with one output of the driving circuit, the input end of the first power tube is connected with the other end of the sampling circuit, the output end of the first power tube is connected with the input end of the second power tube, and meanwhile, the output end of the second power tube is used as the output end of the output circuit, and the output end of the second power tube is grounded.
In a second aspect, the above object of the present invention is achieved by the following technical solutions:
a dynamic high-temperature gate bias test method for a broadband semiconductor is provided, wherein the test circuit is sampled, and a drive circuit controls a bipolar pulse signal generating circuit to generate a bipolar pulse signal and applies the bipolar pulse signal to a control end of the broadband semiconductor; the control circuit controls the short circuit between the control end and the input end of the broadband semiconductor, measures the threshold voltage of the control end of the broadband semiconductor when the connection between the input end and the output end of the broadband semiconductor is disconnected, and measures the leakage current of the control end of the broadband semiconductor when the connection between the control end and the input end of the broadband semiconductor is disconnected.
The invention is further provided with: after the bipolar pulse signal is applied to the control end of the broadband semiconductor, the bipolar pulse signal is disconnected, the broadband semiconductor is measured, the control circuit controls the control end and the input end of the broadband semiconductor to be in short circuit, when the connection between the input end and the output end of the broadband semiconductor is disconnected, the threshold voltage of the control end of the broadband semiconductor is measured, when the connection between the control end and the input end of the broadband semiconductor is disconnected, the leakage current of the control end of the broadband semiconductor is measured when the input end and the output end of the broadband semiconductor are in short circuit.
In a third aspect, the above object of the present invention is achieved by the following technical solutions:
a dynamic high-temperature grid bias test device for a broadband semiconductor comprises at least one bipolar pulse signal generation circuit, at least one test sub-circuit, a control circuit and a switch circuit, wherein the switch circuit comprises at least one control switch, one bipolar pulse signal generation circuit is connected with one test sub-circuit through one control switch and used for controlling whether a bipolar pulse signal is applied to the test sub-circuit, each test sub-circuit is connected with a source table through the other control switch, one test sub-circuit is used for testing one broadband semiconductor, the control circuit is respectively connected with each test sub-circuit and each control switch, each bipolar pulse signal generation circuit is used for generating a bipolar pulse signal, each control switch is opened or closed and used for applying or disconnecting the bipolar pulse signal to each broadband semiconductor, the control circuit controls each test sub-circuit, and the control end of the broadband semiconductor connected with the test sub-circuit is short-circuited with an input end or the input end is short-circuited with an output end; the source list for test is connected to the control end of the broadband semiconductor through a switch circuit and is used for measuring the threshold voltage and leakage current of the control electrode of the broadband semiconductor.
The invention is further provided with: the switch circuit comprises at least two single-control switches and two double-control switches, one end of each single-control switch is connected to the output end of one bipolar pulse signal generating circuit, the other end of each single-control switch is connected to one end of one testing sub-circuit, and each double-control switch is respectively connected between the source meter and one broadband semiconductor and used for controlling whether the source meter is connected with the broadband semiconductor or not to conduct measurement.
In a fourth aspect, the above object of the present invention is achieved by the following technical solutions:
a dynamic high-temperature gate bias test method for a broadband semiconductor is disclosed, which comprises sampling the test equipment, controlling a bipolar pulse signal generating circuit by a control circuit to generate a bipolar pulse signal, controlling a test sub-circuit to be connected to a source table during test, controlling the test sub-circuit to disconnect from the bipolar pulse signal generating circuit, short-circuiting a control end and an input end of the broadband semiconductor by the test sub-circuit, and measuring the threshold voltage of the control end of the broadband semiconductor when the connection between the input end and the output end of the broadband semiconductor is disconnected; and when the input end and the output end of the broadband semiconductor are short-circuited, the leakage current of the control end of the broadband semiconductor is measured.
Compared with the prior art, the beneficial technical effects of this application are:
1. the method and the device realize continuous adjustment of the grid voltage by setting the positive voltage and the negative voltage of the bipolar pulse signals, and expand the range of the test device;
2. further, the parameter calibration of the semiconductor device is realized through the test of the grid parameters, and support is provided for popularization of the broadband semiconductor application;
3. furthermore, the bipolar pulse signal is firstly applied to the broadband semiconductor, and then the test is carried out after the bipolar pulse signal is disconnected, so that the test precision is improved.
Drawings
FIG. 1 is a schematic diagram of a test circuit structure according to one embodiment of the present application;
FIG. 2 is a schematic diagram of a test sub-circuit structure according to one embodiment of the present application;
FIG. 3 is a schematic diagram of a bipolar pulse signal generating circuit according to an embodiment of the present application;
FIG. 4 is a schematic diagram of test signals according to one embodiment of the present application;
FIG. 5 is a schematic diagram of a test circuit according to one embodiment of the present application;
FIG. 6 is a schematic diagram of a test apparatus according to one embodiment of the present application;
FIG. 7 is a schematic diagram of a test apparatus according to one embodiment of the present application.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Detailed description of the preferred embodiments
The dynamic high-temperature gate bias test circuit for the broadband semiconductor comprises a control circuit, a bipolar pulse signal generating circuit and a test sub-circuit, wherein the control circuit is respectively connected with the bipolar pulse signal generating circuit and the test sub-circuit, the control circuit controls the frequency and the duty ratio of a bipolar pulse signal output by the bipolar pulse signal generating circuit, the test sub-circuit is respectively connected with a control electrode, an input electrode and an output electrode of the broadband semiconductor, the output electrode is grounded, and the output of the bipolar pulse signal generating circuit is connected with the control end of the broadband semiconductor.
In this application, the control electrode is also called the gate, the input corresponds to the source, and the output corresponds to the drain.
The control circuit controls the testing sub-circuit, tests parameters of the broadband semiconductor after bipolar pulse signals are applied to the broadband semiconductor, and the source meter is connected to the control electrode of the broadband semiconductor and used for testing the parameters of the control electrode of the broadband semiconductor.
The positive voltage and the negative voltage of the bipolar pulse signal are adjusted according to the device, the positive voltage is larger than zero, and the absolute value of the negative voltage is larger than zero.
When the test sub-circuit disconnects the control electrode from the input electrode and short-circuits the input electrode from the output electrode, the source meter measures the leakage current Igss of the broadband semiconductor control electrode; the source meter measures the threshold voltage Vgs (th) of the broadband semiconductor control electrode when the connection between the input electrode and the output electrode is disconnected while the test sub-circuit shorts the connection between the control electrode and the input electrode.
The test sub-circuit, as shown in fig. 2, includes a first control switch K1A and a second control switch K1B. One end of a switch of the first control switch is connected with the control electrode of the broadband semiconductor, and the other end of the switch of the first control switch is connected with the input electrode of the broadband semiconductor; one end of the switch of the second control switch is connected with the input pole of the broadband semiconductor, and the other end is connected with the output pole of the broadband semiconductor.
The control electrode and the input electrode of the broadband semiconductor are short-circuited when the first switch is closed, and the input electrode and the output electrode of the broadband semiconductor are short-circuited when the second switch is closed.
The control ends of the first control switch and the second control switch are connected to the control circuit, and control signals output by the control circuit respectively control the switch states of the first control switch and the second control switch.
In one embodiment of the present application, a single pole double throw relay is used to combine the first control switch and the second control switch together, the second control switch being open when the first control switch is closed, and conversely the first control switch being open when the second control switch is closed.
The bipolar pulse signal generating circuit, as shown in fig. 3, comprises a bipolar power supply, a driving circuit, a sampling operation circuit and an output circuit, wherein the positive voltage output end of the bipolar power supply is connected to one input end of the sampling operation circuit, one output end of the sampling operation circuit is connected to the output circuit, the other output end of the sampling operation circuit is connected to the driving circuit, the output of the driving circuit is connected to the input end of the output circuit, and the negative voltage output end of the bipolar power supply is connected to one negative end of the output circuit and used for providing negative voltage.
The output circuit outputs a bipolar pulse signal according to the control signal output by the driving circuit.
The sampling operation circuit samples the current in the circuit, performs operation, outputs an operation result to the driving circuit, and the driving circuit outputs a control signal according to the operation result to control the output pulse frequency and the duty ratio of the output circuit.
The sampling operation circuit comprises a sampling circuit and an operation circuit, one end of the sampling circuit is connected to the positive voltage output end of the bipolar power supply and one end of the operation circuit, and the other end of the sampling circuit is connected to the other end of the operation circuit and one end of the output circuit.
The sampling circuit comprises a sampling resistor which is connected in series between the positive voltage output end of the bipolar power supply and the input end of the output circuit and is used for sampling the output current of the output circuit.
The operation circuit comprises an operation amplifier, and is used for performing operation on voltages at two ends of the sampling resistor to obtain an operation result and outputting a control signal to the output circuit.
The output circuit comprises two power tubes, the input end of the first power tube is connected to one end of the sampling circuit, the output end of the first power tube is connected to the input end of the second power tube, the output end of the second power tube is connected to the negative voltage output end of the bipolar power supply, and the control end of the first power tube and the control end of the second power tube are respectively connected to the driving circuit and used for conducting or cutting off according to control signals.
In the application, when the first power tube is switched on, the second power tube is switched off, otherwise, when the first power tube is switched off, the second power tube is switched on.
A protection device, including a current limiting device, is also connected in series between the positive voltage output end of the bipolar power supply and the sampling resistor.
In one embodiment of the present application, the current limiting device comprises a fuse.
In a specific embodiment of the present application, a dynamic high temperature gate bias test for a wideband semiconductor is shown in fig. 4, and includes a bipolar pulse signal generating circuit, a test sub-circuit, a control circuit, and a switching circuit, not shown in the control circuit diagram, where the switching circuit includes at least one control switch, and an output of the bipolar pulse signal is connected to one end of the control switch K2, and the other end of the control switch K2 is connected to the test sub-circuit.
The bipolar power supply in the bipolar pulse signal generating circuit generates a positive voltage VSS and a negative voltage-VSS, where the positive voltage and the negative voltage are equal in value or unequal in value.
After the fuse FR and the sampling resistor R are connected in series, one end of the fuse FR and one end of the sampling resistor R are connected to the positive voltage output end, and the other end of the sampling resistor R is connected to the input end of the first power tube Q1. The output end of the first power tube Q1 is connected with the input end of the second power tube Q2, and the output end of the second power tube Q2 is connected to the negative voltage output end.
The two ends of the sampling resistor R are respectively connected to the two ends of the operation circuit, wherein the connection point of the sampling resistor and the fuse tube is connected to the positive input end of the operation circuit, the connection point of the sampling resistor and the input end of the first power tube is connected to the negative input end of the operation circuit, and the output end of the operation circuit is connected to the driving circuit.
The operational circuit includes an operational amplifier Q3.
The driving circuit generates driving signals according to the operation result of the operation circuit, and the driving signals are respectively applied to the control electrode of the first power tube Q1 and the control electrode of the second power tube Q2 to control the on or off of the first power tube Q1 and the second power tube Q2, when the first power tube Q1 is on, the second power tube Q2 is off, and when the first power tube Q1 is off, the second power tube Q2 is on, so that bipolar pulse signals PM are generated.
The switching circuit comprises control switches K2 and Km, one end of the control switch K2 is connected to the output end of the bipolar pulse signal, and the other end of the control switch K2 is connected with the test sub-circuit and used for controlling whether the bipolar pulse signal is applied to the test sub-circuit or not; one end of the control switch Km is connected to the source meter, the other end is connected to the control end of the broadband semiconductor, the control switch Km is used for controlling whether the source meter performs measurement or not, and the control end of each control switch is connected to the control circuit.
The application discloses a dynamic high-temperature gate bias test method for a broadband semiconductor, which comprises the following steps: the driving circuit controls the bipolar pulse signal generating circuit to generate a bipolar pulse signal, the bipolar pulse signal is applied to the control end of the broadband semiconductor, the control end and the input end of the broadband semiconductor are short-circuited, and when the connection between the input end and the output end of the broadband semiconductor is disconnected, the threshold voltage of the control end of the broadband semiconductor is measured; and when the input end and the output end of the broadband semiconductor are short-circuited, the leakage current of the control end of the broadband semiconductor is measured.
In one embodiment of the present application, a bipolar pulse signal is applied to a control terminal of a wideband semiconductor, stress is applied to the wideband semiconductor, the bipolar pulse signal is disconnected, and a parameter of the wideband semiconductor is measured, so that measurement accuracy can be improved.
As shown in fig. 5, the positive voltage and the negative voltage of the bipolar pulse signal are respectively different from zero, and the leakage current and the threshold voltage are tested by adopting a pulse test mode. Second embodiment
The dynamic high-temperature grid bias test equipment for the broadband semiconductor comprises at least one bipolar pulse signal generation circuit, at least one test subcircuit, a control circuit and a switch circuit, wherein the control circuit is not shown in the figure, the switch circuit comprises at least one control switch, the output of the bipolar pulse signal is connected with one test subcircuit through one control switch, and each test subcircuit is connected with a source meter through the other control switch in the switch circuit and is used for controlling the source meter to test only one broadband semiconductor at one time.
The switching circuit comprises first type control switches K21, K22 and … K2n and second type control switches Km1, km2 and … Kmn, one end of each control switch in the first type control switch is connected with an output end of a bipolar pulse signal, the other end of each control switch is connected with a test sub-circuit, one end of each control switch in the second type control switch is connected with a test sub-circuit, the other end of each control switch is connected with a source meter, the control ends of the control switches are connected with the control circuits, and n represents the number of the test circuits.
The first type of control switch adopts a single-pole single-throw switch, and the second type of control switch adopts a double-pole double-throw switch.
Specifically, as shown in fig. 7, the control end and the output end of each test sub-circuit are connected to the source meter bus through a double-pole double-throw switch km_i, the source meter is connected to the source meter bus through a double-pole double-throw switch Kmea, wherein i represents the number of test sub-circuits connected to the source meter bus, and each test sub-circuit is used for testing one broadband semiconductor.
The test method of the equipment comprises the following steps: under the control of the control circuit, the source table is only connected with one test sub-circuit in the source table at one time node, and the connection between the bipolar pulse signal and the test sub-circuit is disconnected, so that the broadband semiconductor connected with the test sub-circuit is tested.
The rest of the broadband semiconductors in the device are disconnected from the source meter on one hand and bipolar pulse signals are applied on the other hand, so that an aging experiment is carried out.
The control circuit adopts a round-robin mode to finish testing all the broadband semiconductors in the equipment.
In one embodiment of the present application, each control switch in the switching circuit employs a relay.
The above embodiments are not intended to limit the scope of the present invention, so: all equivalent changes in structure, shape and principle of the invention should be covered in the scope of protection of the invention.
Claims (10)
1. A dynamic high-temperature gate bias test circuit for a broadband semiconductor is characterized in that: the device comprises a bipolar pulse signal generating circuit, a testing sub-circuit and a control circuit, wherein the control circuit is respectively connected with the bipolar pulse signal generating circuit and the testing sub-circuit, the bipolar pulse signal generating circuit is used for generating a bipolar pulse signal under the control of the control circuit, the output of the bipolar pulse signal generating circuit is connected with the control end of the broadband semiconductor, and the control circuit is used for controlling the testing sub-circuit and is used for short-circuiting the control end and the input end or short-circuiting the input end and the output end; the source list for test is connected to the control end of the broadband semiconductor and is used for measuring the threshold voltage and leakage current of the control electrode of the broadband semiconductor.
2. The dynamic high temperature bias gate test circuit for a wide band semiconductor of claim 1, wherein: the test sub-circuit comprises two control switches, one end of a switch of the first control switch is connected with the control end of the broadband semiconductor, and the other end of the switch is connected with the input end of the broadband semiconductor; one end of a switch of the second control switch is connected with the input end of the broadband semiconductor, and the other end of the switch is connected with the output end of the broadband semiconductor; the control end of the first control switch and the control end of the second control switch are respectively connected to the control circuit.
3. The dynamic high temperature bias gate test circuit for a wide band semiconductor of claim 1, wherein: the bipolar pulse signal generating circuit comprises a bipolar power supply, a driving circuit, a sampling operation circuit and an output circuit, wherein the positive voltage output end of the bipolar power supply is connected with one end of the sampling operation circuit, the other end of the sampling operation circuit is connected to the output circuit, the output of the sampling operation circuit is connected to the input of the driving circuit, the output of the driving circuit is connected to the output circuit, the negative voltage output end of the bipolar power supply is connected to the output circuit, and the output circuit is used for outputting a bipolar pulse signal according to a control signal of the driving circuit.
4. A dynamic high temperature bias gate test circuit for a wide band semiconductor as set forth in claim 3, wherein: the sampling operation circuit comprises a sampling circuit and an operation circuit, one end of the sampling circuit is connected with the positive output end of the bipolar power supply and one end of the operation circuit, the other end of the sampling circuit is connected with the other end of the operation circuit and one end of the output circuit, and the output of the operation circuit is connected to the driving circuit and used for carrying out operation according to a sampling result and outputting the operation result to the driving circuit.
5. A dynamic high temperature bias gate test circuit for a wide band semiconductor as set forth in claim 3, wherein: the output circuit comprises two power tubes, the control electrode of each power tube is respectively connected with one output of the driving circuit, the input end of the first power tube is connected with the other end of the sampling circuit, the output end of the first power tube is connected with the input end of the second power tube, and meanwhile, the output end of the second power tube is used as the output end of the output circuit, and the output end of the second power tube is grounded.
6. A dynamic high-temperature gate bias test method for a broadband semiconductor is characterized in that: sampling the test circuit of any one of claims 1-5, wherein the drive circuit controls the bipolar pulse signal generating circuit to generate a bipolar pulse signal, and the bipolar pulse signal is applied to the control end of the broadband semiconductor; the control circuit controls the short circuit between the control end and the input end of the broadband semiconductor, measures the threshold voltage of the control end of the broadband semiconductor when the connection between the input end and the output end of the broadband semiconductor is disconnected, and measures the leakage current of the control end of the broadband semiconductor when the connection between the control end and the input end of the broadband semiconductor is disconnected.
7. The method for dynamic high temperature gate bias testing of a broadband semiconductor according to claim 6, wherein: after the bipolar pulse signal is applied to the control end of the broadband semiconductor, the bipolar pulse signal is disconnected, the broadband semiconductor is measured, the control circuit controls the control end and the input end of the broadband semiconductor to be in short circuit, when the connection between the input end and the output end of the broadband semiconductor is disconnected, the threshold voltage of the control end of the broadband semiconductor is measured, when the connection between the control end and the input end of the broadband semiconductor is disconnected, the leakage current of the control end of the broadband semiconductor is measured when the input end and the output end of the broadband semiconductor are in short circuit.
8. A dynamic high-temperature grid bias test device for a broadband semiconductor is characterized in that: the device comprises at least one bipolar pulse signal generating circuit, at least one testing sub-circuit, a control circuit and a switching circuit, wherein the switching circuit comprises at least one control switch, the one bipolar pulse signal generating circuit is connected with one testing sub-circuit through one control switch and used for controlling whether the bipolar pulse signal is applied to the testing sub-circuit, each testing sub-circuit is connected with a source meter through the other control switch, one testing sub-circuit is used for testing one broadband semiconductor, the control circuit is respectively connected with each testing sub-circuit and each control switch, each bipolar pulse signal generating circuit is used for generating the bipolar pulse signal, each control switch is opened or closed and used for applying or disconnecting the bipolar pulse signal to each broadband semiconductor, the control circuit controls each testing sub-circuit, and the control end of the broadband semiconductor connected with the testing sub-circuit is short-circuited with the input end or the input end is short-circuited with the output end; the source list for test is connected to the control end of the broadband semiconductor through a switch circuit and is used for measuring the threshold voltage and leakage current of the control electrode of the broadband semiconductor.
9. The dynamic high temperature bias gate test apparatus for a wide band semiconductor of claim 8, wherein: the switch circuit comprises at least two single-control switches and two double-control switches, one end of each single-control switch is connected to the output end of one bipolar pulse signal generating circuit, the other end of each single-control switch is connected to one end of one testing sub-circuit, and each double-control switch is respectively connected between the source meter and one broadband semiconductor and used for controlling whether the source meter is connected with the broadband semiconductor or not to conduct measurement.
10. A dynamic high-temperature gate bias test method for a broadband semiconductor is characterized in that: sampling the test equipment according to any one of claims 8 to 9, wherein the control circuit controls the bipolar pulse signal generating circuit to generate a bipolar pulse signal, each test sub-circuit is connected to the bipolar pulse signal generating circuit, and when in test, controls one test sub-circuit to be connected to the source meter and controls the test sub-circuit to disconnect from the bipolar pulse signal generating circuit, the test sub-circuit shorts the control end and the input end of the broadband semiconductor, and when the connection between the input end and the output end of the broadband semiconductor is disconnected, the threshold voltage of the control end of the broadband semiconductor is measured; and when the input end and the output end of the broadband semiconductor are short-circuited, the leakage current of the control end of the broadband semiconductor is measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311578413.3A CN117572189A (en) | 2023-11-23 | 2023-11-23 | Dynamic high-temperature gate bias test circuit and equipment for broadband semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311578413.3A CN117572189A (en) | 2023-11-23 | 2023-11-23 | Dynamic high-temperature gate bias test circuit and equipment for broadband semiconductor |
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