CN207967011U - A kind of distinguishable detector of room temperature nano wire number of photons - Google Patents

A kind of distinguishable detector of room temperature nano wire number of photons Download PDF

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CN207967011U
CN207967011U CN201820160569.8U CN201820160569U CN207967011U CN 207967011 U CN207967011 U CN 207967011U CN 201820160569 U CN201820160569 U CN 201820160569U CN 207967011 U CN207967011 U CN 207967011U
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photons
distinguishable
nano wire
room temperature
metal
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胡伟达
骆文锦
王鹏
龙明生
陈效双
陆卫
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Shanghai Institute of Technical Physics of CAS
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Abstract

This patent discloses a kind of distinguishable detectors of room temperature nano wire number of photons.It is substrate, oxide skin(coating), nanowire semiconductor and metal source and drain electrodes that device architecture is followed successively by from bottom to top.Device preparation process is that there is abundant surface state nano wire to be transferred on substrate CVD growth, metal electrode is prepared as source electrode and drain electrode with the method combination conventional stripping process of ultraviolet photolithographic or electron beam lithography, forms nanowire semiconductor field-effect transistor structure.Device is firstly the need of the application negative sense grid voltage between source electrode and grid, so that field-effect transistor reaches mutual conductance maximum, photohole can be captured by the abundant surface state of nano wire for a long time, form grating effect, so that saltus step occurs for current signal, and then realize distinguishable number of photons detection.The photon detector has the characteristics that working and room temperature, number of photons are distinguishable, highly sensitive, response is fast, stability is good and low-power consumption.

Description

A kind of distinguishable detector of room temperature nano wire number of photons
Technical field
This patent is related to a kind of nanowire semiconductor photoelectric detector, and referring specifically to a kind of room temperature nano wire number of photons can divide Distinguish detector.
Background technology
Single-photon detector records photon-this basic quantum regime by its extremely sensitive detectivity, it Dirty, biology hair is surveyed in high-resolution spectral measurement, non-destructive species analysis, the detection of high speed phenomenon, rigorous analysis, air The fields such as light, radioactivity detection, high-energy physics, astronomical survey light, optical time domain reflection, quantum key distribution system, which have, widely answers With.However, first, traditional single-photon detector, such as photomultiplier, avalanche photodide and superconducting single-photon detector It needs the hectovolt driving voltage of Geiger pattern or needs the operating condition of extremely low temperature so that their operation is relatively multiple It is miscellaneous.Second, single-photon detector possesses the also only very few of number of photons resolution capability, third, most of single photon detection Device needs high request growth conditions as molecular beam epitaxy, and difficulty is brought to device fabrication process.Therefore, there is an urgent need to study A kind of unique device architecture has a number of photons resolution capability simultaneously, easily fabricated (of low cost) and can work at room temperature (easy to operate, energy saving) meets application of the single-photon detector in modern science and the every field of engineering.
One dimension semiconductor nano wire is due to peculiar with the physical and chemical performances such as special light, electricity, magnetic and nanostructure Performance causes the extensive concern of scientists, is acknowledged as developing the base of next-generation nano photoelectric device and integrated system Plinth becomes the forward position in current nano materials research field.Cadmium sulfide (CdS) is as a kind of important direct band gap II-VI group Object semi-conducting material is closed, energy gap is 2.4eV under room temperature, has semiconductor, photoelectricity, thermoelectricity, piezoelectricity, air-sensitive and transparent leads The characteristics such as electricity, can be in nano laser, light emitting diode, optical-fibre communications, high-speed electronic components, photoelectricity as opto-electronic device Many technical fields such as sub- device, biosensor, photodetector and communications satellite and solar cell have wide Application value.
Although having some distinguishable detectors of new type low temperature number of photons has been prepared out [Nature Photonics 1,585 (2007)], but the distinguishable detector easily manufactured of number of photons at room temperature occurs not yet.
In order to solve the problems, such as that above-mentioned single-photon detector currently encounters, this patent, which proposes a kind of room temperature nano wire, to be divided The method for distinguishing number of photons detection.This method is that the cadmium sulfide (CdS) based on chemical vapor deposition (CVD) growth makes field-effect crystalline substance Body pipe, since the CdS of CVD growth has abundant surface state, big specific surface area and high carrier mobility, these three properties It can help nano wire together to respond a photon at room temperature and be detected, wherein surface state is similar to the work of quantum dot With with grating (photongating) effect.
Invention content
This patent proposes a kind of distinguishable detector of room temperature nano wire number of photons, realizes nanowire semiconductor field-effect Application of the structure in room temperature photon field of detecting.
Nano wire and its grating effect are introduced single-photon detecting geodesic structure by above-mentioned patent, which is based on field-effect Transistor utilizes nanowire surface state to capture photohole, causes grating effect at room temperature, can so as to cause current-jump Realize highly sensitive, the low-power consumption of device, the distinguishable detection of number of photons.
This patent refers to a kind of distinguishable detector of room temperature nano wire number of photons and preparation method, which is characterized in that device junction Structure is followed successively by from bottom to top：
Substrate 1,
Oxide skin(coating) 2,
Nanowire semiconductor 3,
Metal source 4, metal-drain 5,
Wherein substrate 1 is the Si substrates of heavy doping, 0.3-0.5 millimeters of thickness；
Wherein oxide skin(coating) 2 is SiO2, 110 ± 10 nanometers of thickness；
Wherein nanowire semiconductor 3 is CdS nano wires, and CdS nanowire surfaces have abundant surface state.Channel length From 0.1 micron to 5 micron, diameter is from 30 nanometers to 300 nanometer；
Wherein metal source 4, metal-drain 5 are Cr and Au electrodes, and lower layer's Cr thickness is 5-15 nanometers, and upper layer Au thickness is 45-75 nanometers.
This patent refers to a kind of distinguishable detector of room temperature nano wire number of photons and preparation method, it is characterised in that prepared by device Include the following steps：
1) prepared by oxide skin(coating)
Oxide skin(coating) silica is prepared by thermal oxidation method on heavy doping Si substrates, thickness is 110 nanometers.
2) nanowire semiconductor is prepared and is shifted
Using Au catalyst, is grown on a si substrate using chemical vapor deposition method and prepare CdS nano wires, CdS is made to receive Nanowire surface has abundant surface state.CdS nanowire semiconductors (3) are then transferred to by oxide using physical transfer method Layer (2) surface.
3) preparation of nanowire semiconductor source-drain electrode
Using ultraviolet photolithographic technology or electron beam lithography, metal is being prepared in conjunction with thermal evaporation and conventional stripping process Source electrode (4) drains (5), forms back grid structure nanowire semiconductor fet structure device；Electrode is chromium, gold, and thickness is respectively 5-15 nanometers, 45-75 nanometers.
Apply negative bias between source electrode and grid, transistor is made to be operated near mutual conductance maximum.It is fixed according to Gauss Reason, this measure can play maximum amplification to the photogenerated current subsequently measured, while negative bias can inhibit a part of background Carrier.When device works, small constant voltage, detecting electrode both ends electric current are passed through between source drain.The shape of device work State schematic diagram is as shown in Figure 2.When incident light is decayed to only several photon energys arrival devices, and the energy of incident photon is more than The energy gap of nano wire generates photo-generate electron-hole.Hole is directed into nanowire surface state under the action of negative bias In, and captured for a long time, electronics stays in nanowire channel.On the one hand the hole being captured can shield a part of grid electricity Pressure so that channel current has certain rise, and on the other hand, the hole being captured can be acted on by capacitive coupling so that nanometer Electron concentration in line increases, again so that channel current increases.The two effect collaborations carry out, in detection source-drain electrode two It is observed that apparent skip signal in the electric current at end.The distinguishable detector of nanowire semiconductor number of photons is under different conditions Response diagram it is as shown in Figure 3.
The advantages of this patent patent, is：This patent is based on fet structure, the negative bias between source electrode and grid Under, can effectively capture photohole for a long time using the surface state of nano wire, so as to cause grating effect and shielding negative sense it is inclined Pressure so that the electric current change caused by a photon can be detected.In addition, device also there is working and room temperature, number of photons can divide It distinguishes, is highly sensitive, responding the features such as fast, stability is good, low-power consumption.
Description of the drawings
Fig. 1 is the distinguishable number of photons panel detector structure schematic three dimensional views of nanowire semiconductor.
In figure：1 substrate, 2 oxide skin(coating)s, 3 nanowire semiconductors, 4 metal sources, 5 metal-drains.
Fig. 2 nanowire semiconductors distinguishable number of photons detector section working state schematic representation.
The distinguishable detector of Fig. 3 nanowire semiconductor number of photons nano wire therein is responding a light using grating effect Operating diagram before and after son, before (a) response, after (b) responding.
Specific implementation mode
It elaborates below in conjunction with the accompanying drawings to specific implementation of the patent mode：
This patent has developed the distinguishable detector of nanowire semiconductor number of photons.By being based on fet structure, in source electrode Under negative bias between grid, photohole can be effectively captured for a long time using the surface state of nano wire, so as to cause Grating effect and shielding negative bias so that earth-current change caused by a photon can be detected.To significantly improve Single-photon detector is in working and room temperature, the distinguishable and easily prepared integrated performance of number of photons.
It is as follows：
1. substrate selects
Select the heavily-doped p-type silicon of 0.5 millimeter of thickness as substrate.
2. prepared by medium of oxides layer
By thermal oxide hair in surface of silicon, 110 nano thickness silica are aoxidized.
3. prepared by nanowire semiconductor transfer
CdS nano wires are grown with CVD method, make CdS nanowire surfaces that there is abundant surface state.It is then transferred to SiO2On/Si substrates, 8 microns of the length of CdS, 100 nanometers of diameter.
4. prepared by source electrode, drain electrode
Source electrode, drain electrode figure are prepared using ultraviolet photolithographic method；Metal electrode, chromium 15 are prepared using thermal evaporation techniques Nanometer, 65 nanometers of gold；In conjunction with conventional stripping methods, stripping metal film obtains source electrode, drain electrode, and channel width is 0.5 micro- Rice.
5. the distinguishable number of photons detector of the nanowire semiconductor prepared is carried out photo response test.For different The distinguishable number of photons of channel length (0.1 micron to 5 microns) and different nanowire diameter (30 nanometers to 300 nanometers) is visited Device is surveyed, super high sensitivity is shown in test process, all has photon resolution capability.
A) 0.1 micron of channel lengths, the distinguishable number of photons detector of 30 nanometers of nanowire diameter at room temperature, can be with Tell 1 to 5 photons.
B) 1 micron of channel lengths, the distinguishable number of photons detector of 100 nanometers of nanowire diameter at room temperature, Ke Yifen Discern 1 to 3 photons.
C) 5 microns of channel lengths, the distinguishable number of photons detector of 300 nanometers of nanowire diameter at room temperature, Ke Yifen Discern 1 to 2 photons.
Apply 3 volts of negative bias between drain and gate, so that transistor is operated near mutual conductance maximum, while negative sense is inclined Pressure can inhibit a part of background carriers.When device works, 0.1 volt of small constant voltage, detection electricity are passed through between source drain Pole both ends electric current.When 460 nano wave length incident lights are decayed to only several photon energys arrival devices, it is special to measure photoelectric respone Property, generating photohole is excited under the action of negative bias in nanowire surface state, and is captured for a long time, and electronics stays In nanowire channel.On the one hand the hole being captured can shield a part of grid voltage so that channel current has certain Go up, on the other hand, the hole being captured is acted on by capacitive coupling makes the electron concentration in nano wire increase, and makes again Channel current is obtained to increase.The two effects are carried out at the same time, and electric current is observed that in the electric current at detection source-drain electrode both ends Apparent saltus step, and formed and continue photogenerated current, realize the highly sensitive detection of the distinguishable detector of nanowire semiconductor number of photons.
As a result illustrate distinguishable number of photons detector of this patent nanowire semiconductor and preparation method thereof, the structure devices, Effectively room temperature it can detect photon and the practicability of distinguishable number of photons and then raising nano material photonic semiconductor sensitive detection parts.

Claims (1)

1. a kind of distinguishable detector of room temperature nano wire number of photons, including substrate (1), oxide skin(coating) (2), nanowire semiconductor (3), metal source (4) and metal-drain (5), it is characterised in that：
The panel detector structure is followed successively by from bottom to top：Substrate (1), oxide skin(coating) (2), nanowire semiconductor (3), source metal Pole (4), metal-drain (5), wherein：
The substrate (1) is the Si substrates of heavy doping；
The oxide skin(coating) (2) is SiO2, 110 ± 10 nanometers of thickness；
The nanowire semiconductor (3) is CdS nano wires, channel length from 0.1 micron to 5 micron, diameter from 30 nanometers to 300 nanometers；
The metal source (4) and metal-drain (5) is Cr and Au electrodes, and lower layer's Cr thickness is 5-15 nanometers, and upper layer Au is thick Degree is 45-75 nanometers.
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CN108258064A (en) * 2017-07-12 2018-07-06 中国科学院上海技术物理研究所 A kind of distinguishable detector of room temperature nano wire number of photons and preparation method
CN111721710A (en) * 2020-01-22 2020-09-29 中国科学院上海微系统与信息技术研究所 Method for calibrating silicon nanowire sensor by light
CN113140650A (en) * 2021-04-06 2021-07-20 天津大学 Vertical coupling transparent photoelectric detector based on surface state absorption principle

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CN109950359A (en) * 2019-03-29 2019-06-28 中国科学院上海技术物理研究所 It is a kind of to be passivated enhanced low-dimensional nanometer detection device and preparation method using hafnium oxide
CN110734036B (en) * 2019-10-28 2022-07-26 南京大学 On-chip spectrometer integrated on nanowire and preparation method of detector array of on-chip spectrometer

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US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
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CN101979723B (en) * 2010-11-23 2012-07-04 东华大学 Method for preparing p-type CdS nanowires
JP2015149376A (en) * 2014-02-06 2015-08-20 国立研究開発法人物質・材料研究機構 semiconductor photodetector
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Publication number Priority date Publication date Assignee Title
CN108258064A (en) * 2017-07-12 2018-07-06 中国科学院上海技术物理研究所 A kind of distinguishable detector of room temperature nano wire number of photons and preparation method
CN111721710A (en) * 2020-01-22 2020-09-29 中国科学院上海微系统与信息技术研究所 Method for calibrating silicon nanowire sensor by light
CN113140650A (en) * 2021-04-06 2021-07-20 天津大学 Vertical coupling transparent photoelectric detector based on surface state absorption principle

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