CN207965941U

CN207965941U - Storage card and terminal

Info

Publication number: CN207965941U
Application number: CN201820179424.2U
Authority: CN
Inventors: 杨江涛
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2018-02-01
Filing date: 2018-02-01
Publication date: 2018-10-12
Anticipated expiration: 2028-02-01

Abstract

Provided herein is a kind of storage card and terminals, wherein the storage card includes：Storage unit, control unit and memory card interface, storage unit and control unit are arranged in the card body of storage card, and memory card interface is arranged on the card body of storage card, and control unit is electrically connected with storage unit, memory card interface respectively；Since the shape of storage card is identical as the shape of Nano SIM cards, and the size of storage card is identical as the size of Nano SIM cards, provide a kind of Nano SD cards, so as to which storage card provided in this embodiment is inserted into Nano SIM card holders, further, storage card can share the same Nano SIM card holders with Nano SIM cards.

Description

Storage card and terminal

Technical field

This application involves the communication technology more particularly to a kind of storage card and terminals.

Background technology

With the development of terminal technology, terminal has become the middle important communication tool of people's live and work.Now, eventually It is provided with user identity identification (subscriber identification module, SIM) card on end and secure digital is deposited (secure digital memory, SD) card is stored up, and then terminal can be communicated by SIM card, terminal can deposit data It stores up in SD card.

In the prior art, configured with double Nano-SIM cards in terminal, specifically, terminal provides two Nano-SIM cards Two Nano-SIM cards, can be inserted respectively into Nano-SIM decks by seat, and then terminal realizes the logical of double Nano-SIM cards Letter.

However, when user's using terminal, often user can only configure a Nano-SIM card in terminal, go to make With a Nano-SIM card, to which Nano-SIM cards will not be inserted on another deck in terminal, and then the sky of terminal is wasted Between；Also, the SD card due to providing in the prior art is Micro-SD cards, and existing Micro-SD cards are outer with Nano-SIM cards Shape and interface definition are completely incompatible, therefore the Micro-SD compatible with existing Micro-SD cards is provided with also in terminal Deck, since the design of terminal increasingly minimizes, the optimization of design space is known as industry problem.

Utility model content

A kind of storage card of the application offer and terminal are provided with solution and be will appear in the terminal of two Nano-SIM decks One Nano-SIM deck is not used, and causes waste terminal space, and existing Micro-SD cards and Nano-SIM cards are complete Complete incompatible problem.

In a first aspect, the application provides a kind of storage card, including：Storage unit, control unit and memory card interface, institute It states storage unit and described control unit is arranged in the card body of the storage card；The memory card interface is arranged in the storage On the card body of card；Described control unit is electrically connected with the storage unit, the memory card interface respectively, which is characterized in that institute The shape for stating storage card is identical as the shape of Nano- user identity identification SIM cards, and the size of the storage card with it is described The size of Nano-SIM cards is identical；

The memory card interface includes at least the first hard contact of the storage card, the second metal of the storage card touches Point, the third hard contact of the storage card, the 4th hard contact of the storage card and the fifth metal of the storage card Contact；Wherein, the first hard contact of the storage card is used for transmission power supply signal, and the second hard contact of the storage card is used It is used for transmission control signal, the 4th hard contact of the storage card in the third hard contact of transmission data, the storage card It is used for transmission clock signal, the fifth metal contact of the storage card is used for transmission earth signal.

With reference to first aspect, in the first embodiment of first aspect, the first hard contact of the storage card, institute State the second hard contact of storage card, the third hard contact of the storage card, the storage card the 4th hard contact and The fifth metal contact of the storage card is all located on the same side of the card body of the storage card.

With reference to first aspect or the first embodiment of first aspect, in second of embodiment of first aspect, The first hard contact of the Nano-SIM cards, the second metal of the Nano-SIM cards are provided on the card body of Nano-SIM cards Contact, the third hard contact of the Nano-SIM cards, the 4th hard contact of the Nano-SIM cards, the Nano-SIM cards Fifth metal contact, the Nano-SIM cards the 6th hard contact；

The memory card interface further include the 6th hard contact of the storage card, the storage card the 7th metal touch 8th hard contact of point and the storage card, wherein the 6th hard contact of the storage card is used for transmission data, institute The 7th hard contact for stating storage card is used for transmission data, and the 8th hard contact of the storage card is used for transmission data；

Region of 4th hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of first hard contact on the card body of the Nano-SIM cards is corresponding；

Region of second hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of second hard contact on the card body of the Nano-SIM cards is corresponding；

7th hard contact of the storage card and the first hard contact of the storage card it is adjacent and isolation setting, it is described The region of 7th hard contact of storage card and the first hard contact of the storage card on the card body of the storage card, with institute State that region of the third hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card 7th hard contact is adjacent with the second hard contact of the storage card；

Region of 6th hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of 4th hard contact on the card body of the Nano-SIM cards is corresponding；

Region of the third hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of the fifth metal contact on the card body of the Nano-SIM cards is corresponding；

8th hard contact of the storage card and the fifth metal contact of the storage card it is adjacent and isolation setting, it is described The region of 8th hard contact of storage card and the fifth metal contact of the storage card on the card body of the storage card, with institute State that region of the 6th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card 8th hard contact is adjacent with the third hard contact of the storage card.

With reference to first aspect or the first embodiment of first aspect, in the third embodiment of first aspect, The first hard contact of the Nano-SIM cards, the second metal of the Nano-SIM cards are provided on the card body of Nano-SIM cards Contact, the third hard contact of the Nano-SIM cards, the 4th hard contact of the Nano-SIM cards, the Nano-SIM cards Fifth metal contact, the Nano-SIM cards the 6th hard contact；

7th hard contact of the storage card and the 4th hard contact of the storage card it is adjacent and isolation setting, it is described The region of 7th hard contact of storage card and the 4th hard contact of the storage card on the card body of the storage card, with institute It is corresponding to state region of the first hard contact of Nano-SIM cards on the card body of the Nano-SIM cards；

Region of second hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of second hard contact on the card body of the Nano-SIM cards is corresponding, and the 4th hard contact of the storage card with Second hard contact of the storage card is adjacent；

Region of first hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of the third hard contact on the card body of the Nano-SIM cards is corresponding；

8th hard contact of the storage card and the 6th hard contact of the storage card it is adjacent and isolation setting, it is described The region of 8th hard contact of storage card and the 6th hard contact of the storage card on the card body of the storage card, with institute It is corresponding to state region of the 4th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards；

Region of the third hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of the fifth metal contact on the card body of the Nano-SIM cards is corresponding, and the 6th hard contact of the storage card with The third hard contact of the storage card is adjacent；

Region of the fifth metal contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of 6th hard contact on the card body of the Nano-SIM cards is corresponding.

With reference to first aspect or the first embodiment of first aspect, in the 4th kind of embodiment of first aspect, The first hard contact of the Nano-SIM cards, the second metal of the Nano-SIM cards are provided on the card body of Nano-SIM cards Contact, the third hard contact of the Nano-SIM cards, the 4th hard contact of the Nano-SIM cards, the Nano-SIM cards Fifth metal contact, the Nano-SIM cards the 6th hard contact；

Second hard contact of the storage card and the 7th hard contact of the storage card it is adjacent and isolation setting, it is described The region of second hard contact of storage card and the 7th hard contact of the storage card on the card body of the storage card, with institute State that region of the second hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card Second hard contact is adjacent with the 4th hard contact of the storage card；

Region of first hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of the third hard contact on the card body of the Nano-SIM cards is corresponding, and the 7th hard contact of the storage card with First hard contact of the storage card is adjacent；

The third hard contact of the storage card and the 8th hard contact of the storage card it is adjacent and isolation setting, it is described The region of the third hard contact of storage card and the 8th hard contact of the storage card on the card body of the storage card, with institute State that region of the fifth metal contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card Third hard contact is adjacent with the 6th hard contact of the storage card；

Region of the fifth metal contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of 6th hard contact on the card body of the Nano-SIM cards is corresponding, and the 8th hard contact of the storage card with The fifth metal contact of the storage card is adjacent.

With reference to first aspect or the first embodiment of first aspect, in the 5th kind of embodiment of first aspect, The first hard contact of the Nano-SIM cards, the second metal of the Nano-SIM cards are provided on the card body of Nano-SIM cards Contact, the third hard contact of the Nano-SIM cards, the 4th hard contact of the Nano-SIM cards, the Nano-SIM cards Fifth metal contact, the Nano-SIM cards the 6th hard contact；

7th hard contact of the storage card and the first hard contact of the storage card it is adjacent and isolation setting, it is described The region of 7th hard contact of storage card and the first hard contact of the storage card on the card body of the storage card, with institute State that region of the third hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card First hard contact is adjacent with the second hard contact of the storage card；The area of first hard contact of the storage card is more than The area of 7th hard contact of the storage card；

8th hard contact of the storage card and the fifth metal contact of the storage card it is adjacent and isolation setting, it is described The region of 8th hard contact of storage card and the fifth metal contact of the storage card on the card body of the storage card, with institute State that region of the 6th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card Fifth metal contact is adjacent with the third hard contact of the storage card；The area of the fifth metal contact of the storage card is more than The area of 8th hard contact of the storage card.

With reference to first aspect or the first embodiment of first aspect, in the 6th kind of embodiment of first aspect, The first hard contact of the Nano-SIM cards, the second metal of the Nano-SIM cards are provided on the card body of Nano-SIM cards Contact, the third hard contact of the Nano-SIM cards, the 4th hard contact of the Nano-SIM cards, the Nano-SIM cards Fifth metal contact, the Nano-SIM cards the 6th hard contact；

Region of the fifth metal contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of 6th hard contact on the card body of the Nano-SIM cards is corresponding；

7th hard contact of the storage card is located at the of the 4th hard contact of the storage card and the storage card Between six hard contacts, and the 7th hard contact of the storage card respectively with the 4th hard contact of the storage card, described The 6th hard contact isolation setting of storage card, the central point of the 7th hard contact of the storage card are located at the storage card On the connecting line of the central point of the central point of 4th hard contact and the 6th hard contact of the storage card；

8th hard contact of the storage card is located at the of the first hard contact of the storage card and the storage card Between five hard contacts, and the 8th hard contact of the storage card respectively with the first hard contact of the storage card, described The fifth metal contact isolation setting of storage card, the central point of the 8th hard contact of the storage card are located at the storage card On the connecting line of the central point of the fifth metal contact of the central point of first hard contact and the storage card.

With reference to first aspect or the first embodiment of first aspect, in the 7th kind of embodiment of first aspect, The first hard contact of the Nano-SIM cards, the second metal of the Nano-SIM cards are provided on the card body of Nano-SIM cards Contact, the third hard contact of the Nano-SIM cards, the 4th hard contact of the Nano-SIM cards, the Nano-SIM cards Fifth metal contact, the Nano-SIM cards the 6th hard contact；

Region of 6th hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of first hard contact on the card body of the Nano-SIM cards is corresponding；

Region of the third hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of second hard contact on the card body of the Nano-SIM cards is corresponding；

7th hard contact of the storage card and the first hard contact of the storage card it is adjacent and isolation setting, it is described The region of 7th hard contact of storage card and the first hard contact of the storage card on the card body of the storage card, with institute State that region of the third hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card 7th hard contact is adjacent with the third hard contact of the storage card；

Region of 4th hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of 4th hard contact on the card body of the Nano-SIM cards is corresponding；

Region of second hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of the fifth metal contact on the card body of the Nano-SIM cards is corresponding；

8th hard contact of the storage card and the fifth metal contact of the storage card it is adjacent and isolation setting, it is described The region of 8th hard contact of storage card and the fifth metal contact of the storage card on the card body of the storage card, with institute State that region of the 6th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the storage card 8th hard contact is adjacent with the second hard contact of the storage card.

With reference to first aspect or the first embodiment of first aspect, in the 8th kind of embodiment of first aspect, The first hard contact of the Nano-SIM cards, the second metal of the Nano-SIM cards are provided on the card body of Nano-SIM cards Contact, the third hard contact of the Nano-SIM cards, the 4th hard contact of the Nano-SIM cards, the Nano-SIM cards Fifth metal contact, the Nano-SIM cards the 6th hard contact；

Region of the third hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of second hard contact on the card body of the Nano-SIM cards is corresponding, and the clock signal of the storage card with it is described The third hard contact of storage card is adjacent；

Region of the fifth metal contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of the third hard contact on the card body of the Nano-SIM cards is corresponding；

Region of second hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of the fifth metal contact on the card body of the Nano-SIM cards is corresponding, and the 6th hard contact of the storage card with Second hard contact of the storage card is adjacent；

Region of first hard contact of the storage card on the card body of the storage card, with the Nano-SIM cards Region of 6th hard contact on the card body of the Nano-SIM cards is corresponding.

Second aspect, the application provide a kind of terminal, any one of them storage card as above are provided in the terminal.

In above various aspects, the storage card being made of storage unit, control unit and memory card interface is provided, is deposited Storage unit and control unit are arranged in the card body of storage card, and memory card interface is arranged on the card body of storage card, control unit It is electrically connected respectively with storage unit, memory card interface；Due to storage card shape and Nano- user identity identification SIM cards it is outer Shape is identical, and the size of storage card is identical as the size of Nano-SIM cards, provides a kind of Nano-SD cards, so as to incite somebody to action this The storage card that embodiment provides is inserted into Nano-SIM decks, and further, storage card can share together with Nano-SIM cards One Nano-SIM deck.

Description of the drawings

Fig. 1 is a kind of structural schematic diagram of storage card provided by the embodiments of the present application；

Fig. 2 is the structural schematic diagram of Nano-SIM cards in the prior art；

Fig. 3 is the structural schematic diagram one of another storage card provided by the embodiments of the present application；

Fig. 3 a are the structural schematic diagram two of another storage card provided by the embodiments of the present application；

Fig. 3 b are the structural schematic diagram three of another storage card provided by the embodiments of the present application；

Fig. 3 c are the structural schematic diagram four of another storage card provided by the embodiments of the present application；

Fig. 4 is the structural schematic diagram one of another storage card provided by the embodiments of the present application；

Fig. 4 a are the structural schematic diagram two of another storage card provided by the embodiments of the present application；

Fig. 5 is the structural schematic diagram of another storage card provided by the embodiments of the present application；

Fig. 6 is also a kind of structural schematic diagram of storage card provided by the embodiments of the present application；

Fig. 7 is other a kind of structural schematic diagrams of storage card provided by the embodiments of the present application；

Fig. 8 is also a kind of structural schematic diagram of storage card provided by the embodiments of the present application；

Fig. 9 separately has a kind of structural schematic diagram of storage card to be provided by the embodiments of the present application；

Figure 10 is provided by the embodiments of the present application and has a kind of structural schematic diagram of storage card；

Figure 11 has a kind of structural schematic diagram of storage card again to be provided by the embodiments of the present application；

Figure 12, which is provided by the embodiments of the present application other, a kind of structural schematic diagram of storage card；

Figure 13 is provided by the embodiments of the present application other a kind of structural schematic diagram of storage card again；

Figure 14, which is provided by the embodiments of the present application other, separately a kind of structural schematic diagram of storage card；

Figure 15 is provided by the embodiments of the present application other a kind of structural schematic diagram of storage card again；

Figure 16 is that provided by the embodiments of the present application there is also a kind of structural schematic diagrams of storage card；

Figure 17 is the structural schematic diagram of another storage card provided by the embodiments of the present application；

Figure 18 is the structural schematic diagram of in addition another storage card provided by the embodiments of the present application；

Figure 19 is the structural schematic diagram of in addition another storage card provided by the embodiments of the present application；

Figure 20 is in addition also a kind of structural schematic diagram of storage card provided by the embodiments of the present application；

In addition Figure 21 has a kind of structural schematic diagram of storage card to be provided by the embodiments of the present application；

Figure 22 is provided by the embodiments of the present application other and has a kind of structural schematic diagram of storage card；

In addition Figure 23 has a kind of structural schematic diagram of storage card again to be provided by the embodiments of the present application；

In addition Figure 24 also has a kind of structural schematic diagram of storage card to be provided by the embodiments of the present application；

Figure 25, which is other other provided by the embodiments of the present application, a kind of structural schematic diagram of storage card；

Figure 26 is a kind of circuit diagram of terminal provided by the embodiments of the present application.

Specific implementation mode

The embodiment of the present application is applied in communication device, and the part term in the application is explained below, with Convenient for those skilled in the art understand that.It should be noted that when the embodiment of the present application scheme be applied to present communication device or The future may appear communication device when, the title of storage card and terminal may change, but this have no effect on the application reality Apply the implementation of a scheme.

First, the technical term involved by the application is explained：

1), universal serial bus (universal serial bus, USB)：It is connection computer system and external equipment A kind of serial bus standard and a kind of technical specification of input/output interface, be widely used in PC and shifting The information communications products such as dynamic equipment.

2), Institute of Electrical and Electric Engineers (institute of electrical and electronics Engineers, IEEE) 1394 standards：It is a kind of sata standard.

3), terminal：May include various handheld device, mobile unit, wearable device, family's intelligence with communication function Energy equipment, computing device is connected to other processing equipments of radio modem and various forms of terminals, for example, Mobile station (mobile station, MS), terminal (terminal), user equipment (user equipment, UE), software terminal etc. Deng for example having water meter, ammeter, sensor etc..

It should be pointed out that the noun or term involved in the embodiment of the present application can be referred to mutually, repeat no more.

It should be noted that in the embodiment of the present application, using storage card identical with the appearance and size of Nano-SIM cards come When realizing store function, the type of storage card is not limited to the SD card in example as above.In the embodiment of the present application, storage card can be with It is based on universal serial bus (universal serial bus, USB), high speed peripheral component interlinkage (peripheral Component interconnect express, PCIE), Common Flash Memory storage (universal flash storage, UFS), multimedia storage card (multi media card, MMC) or built-in multimedia storage card (embedded multi Media card, EMMC) etc. interface protocols storage card.

Below in conjunction with attached drawing in one example, technical solution in one example is described.Existing In technology, Micro-SD cards can be configured in current terminal, can also configure Nano-SIM cards.The size of Micro-SD cards is The size of * 15 millimeters of 11 millimeters (mm), Nano-SIM cards are 8.8 millimeters * 12.3 millimeters.Micro-SD cards compare Nano-SIM rulers Very little big 56mm², and then Micro-SD decks are with respect to the big 130mm of Nano SIM card holder sizes², it is known that Micro-SD cards are can not to insert Into Nano-SIM decks.But when terminal provides two Nano-SIM decks, often user only can be in terminal One Nano-SIM card of upper configuration goes to use a Nano-SIM card, thus will not on another Nano-SIM deck in terminal Nano-SIM cards are inserted into, and then waste the space of terminal；Also, since Micro-SD cards are can not to be inserted into Nano-SIM decks In, and then the terminal for being configured with double Nano-SIM decks can not store data.

Pin in present embodiments is hard contact, i.e., pin can be with contact area, have and lead The contact of Electricity Functional；Pin in present embodiments is that can be referred to as connection terminal；For pin specific name not It is specifically limited.

In present embodiments, A and B " corresponding " can also make A and B map, characterize A and B correspondences/mapping The same shrapnels of Nano-SIM decks.For example, area of the Clock Signal pin of storage card on the card body of storage card Domain, it is corresponding with region of the Clock Signal pin of Nano-SIM cards on the card body of Nano-SIM cards, wherein " phase here It is corresponding " Clock Signal pin of storage card can also be claimed with the Clock Signal pin mapping of Nano-SIM cards, i.e., storage card when The Clock Signal pin of clock signal pins and Nano-SIM cards corresponds to/has mapped the same shrapnel of Nano-SIM decks.

In present embodiments, storage card " power pins " refers to " the first hard contact of storage card ", storage " the data transmission pin " of card refers to " the second hard contact of storage card " that " the control signal pins " of storage card refer to " Clock Signal pin " of " the third hard contact of storage card ", storage card refers to " the 4th hard contact of storage card ", deposits " the earth signal pin " of card storage refers to " the fifth metal contact of storage card "；What " the first data transmission pin " of storage card referred to It is " the second hard contact " that " the second data transmission pin " of storage card refers to " the 6th hard contact ", " third of storage card Data transmission pin " refers to " the 7th hard contact " that " the 4th data transmission pin " of storage card refers to that " the 8th metal touches Point ".

In present embodiments, Nano-SIM cards " Clock Signal pin " refer to " the first gold medal of Nano-SIM cards Belong to contact ", Nano-SIM cards " reset signal pin " refer to " the second hard contact of Nano-SIM cards ", Nano-SIM cards " power pins " refer to " the third hard contact of Nano-SIM cards ", and Nano-SIM cards " data transmission pin " refer to " the 4th hard contact of Nano-SIM cards ", Nano-SIM cards " program voltage/input signal pin " refer to " Nano-SIM cards Fifth metal contact ", Nano-SIM cards " earth signal pin " refer to " the 6th hard contact of Nano-SIM cards ".

Fig. 1 is a kind of structural schematic diagram of storage card provided by the embodiments of the present application, as shown in Figure 1, the storage card includes： Storage unit, control unit and memory card interface, storage unit and control unit are arranged in the card body of storage card；Storage card Interface is arranged on the card body of storage card；Control unit is electrically connected with storage unit, memory card interface respectively, the shape of storage card It is identical as the shape of Nano-SIM cards, and the size of storage card is identical as the size of Nano-SIM cards.

Wherein, memory card interface includes at least power pins, data transmission pin, control signal pins, clock signal and draws Foot and earth signal pin.

In optionally a kind of embodiment, power pins, data transmission pin, control signal pins, clock signal are drawn On the same side for the card body that foot and earth signal pin are all located at storage card.

In the present embodiment, specifically, storage card is made of storage unit, control unit and memory card interface, also, The storage card further includes interface driving circuit, and storage unit, control unit and interface driving circuit are arranged in storage card In card body, memory card interface is arranged on the surface of the card body of storage card.

Also, control unit is electrically connected with storage unit, memory card interface respectively respectively, specifically, interface Driving circuit is electrically connected with memory card interface and control unit respectively, and then interface driving circuit is by memory card interface It is electrically connected with control unit, and control unit and storage unit is electrically connected.

Wherein, memory card interface has included at least a power pins, four data transmission pins, a control signal and has drawn Foot, a Clock Signal pin and an earth signal pin；By power pins, data transmission pin, control signal pins, On the same side for the card body that Clock Signal pin and earth signal pin are all disposed within storage card, as shown in Figure 1, above-mentioned every One pin is the label 11 in Fig. 1.Optionally, the power pins of storage card, the data transmission pin of storage card, storage card The earth signal pin of control signal pins, the Clock Signal pin of storage card and storage card is respectively to be sticked in storage card The flat contact on card body surface.

In a kind of optional embodiment, be provided at least one cabling on the card body of storage card, it is at least one walk Line is located between each pin in memory card interface；At least one cabling is for storage unit to be connect with control unit, at least One cabling is additionally operable to control unit connecting with memory card interface.

Position of each pin of memory card interface on the card body of storage card does not limit.Each pin of memory card interface Length value, height value do not limit.The shape for the pin (or contact or connection terminal) mentioned in the present embodiment can be rule Rectangle, can also be irregular shape, the present embodiment does not limit the shape of pin (or contact or connection terminal). The distance between the side of each pin of memory card interface and each side of storage card value do not limit；The specific height of storage card Value, length value do not limit.

For example, it is from left to right the length direction of storage card according to the viewing angles of Fig. 1, is from top to bottom storage The width direction of card.The length of storage card is 12.30 millimeters, and tolerance is 0.10 millimeter；The width of storage card is 8.80 millimeters, public Difference is 0.10 millimeter.

The shape of storage card provided by the embodiments of the present application is identical as the shape of Nano-SIM cards；For example, Nano-SIM cards For rectangle, and the quadrangle of rectangle is fillet, and one jiao in the quadrangle of rectangle is provided with locating notch, and then the application is real The storage card for applying example offer is also rectangle, and the quadrangle of rectangle is fillet, and one jiao in the quadrangle of rectangle is fallen Angle is arranged, and then locating notch 12 is provided on this jiao.Also, the size of storage card provided by the embodiments of the present application with The size of Nano-SIM cards is identical, and specifically, the length of storage card is identical as the length of Nano-SIM cards, the width of storage card With of same size, the size of the size and the locating notch on Nano-SIM cards of the locating notch on storage card of Nano-SIM cards Also identical.It is thus possible to storage card provided in this embodiment is inserted into Nano-SIM decks, further, storage card with Nano-SIM cards can share the same Nano-SIM decks.

Storage card provided by the embodiments of the present application can be cut card, be can adapt to cut card substantially and non-cut card situation.Citing For, it is from top to bottom the X-direction of storage card according to the viewing angles of Fig. 1, is from left to right the Y-direction of storage card.Table 1 is Nano-SIM cards and the mated condition of Nano-SIM decks of terminal, the Nano-SIM decks of the storage card of the present embodiment and terminal Mated condition.

Table 1 is the fit tolerance analysis of the storage card of the application and the Nano-SIM decks of terminal

From table 1 it follows that the storage card of the present embodiment and the Nano-SIM decks of terminal are produced when being coordinated Raw tolerance, compare generated tolerance when Nano-SIM cards and the Nano-SIM decks of terminal are coordinated be it is identical, And then the storage card of the present embodiment can preferably be coordinated with Nano-SIM decks.

The present embodiment passes through, and provides the storage card being made of storage unit, control unit and memory card interface, and storage is single Member and control unit are arranged in the card body of storage card, and memory card interface is arranged on the card body of storage card, control unit difference It is electrically connected with storage unit, memory card interface；Due to the shape phase of the shape and Nano- user identity identification SIM cards of storage card Together, and the size of storage card is identical as the size of Nano-SIM cards, a kind of Nano-SD cards is provided, as shown in Figure 1, Nano-SD Locating notch 12 is provided on card, so as to which storage card provided in this embodiment to be inserted into Nano-SIM decks, into one Step ground, storage card can share the same Nano-SIM decks with Nano-SIM cards.

Fig. 2 is the structural schematic diagram of Nano-SIM cards in the prior art, as shown in Fig. 2, on the card body of Nano-SIM cards It is provided with Clock Signal pin 31, reset signal pin 32, power pins 33, data transmission pin 34, program voltage/input letter Number pin 35, earth signal pin 36.In each embodiment below, when fractionation to pin, to obtaining after fractionation Shape, the size of pin do not limit, and also do not limit shape, the size of other pins；For example, each pin of storage card Porch can have chamfering, can also not have chamfering.In each embodiment below, when fractionation to pin, Shape, the size of storage card also do not limit, for example, can have locating notch on one jiao of storage card.

Fig. 3 is the structural schematic diagram one of another storage card provided by the embodiments of the present application, and embodiment shown in Fig. 1 provides Storage card on the basis of, as shown in figure 3, storage card includes four data transmission pins, four data transmission pins are respectively First data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

Region of the Clock Signal pin 21 of storage card on the card body of storage card, draws with the clock signal of Nano-SIM cards Region of the foot 31 on the card body of Nano-SIM cards is corresponding.

Region of the first data transmission pin 25 of storage card on the card body of storage card, the reset with Nano-SIM cards are believed Number region of the pin 32 on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card and the power pins 22 of storage card it is adjacent and isolation setting, third data Region of the power pins 22 of transmission pin 27 and storage card on the card body of storage card, the power pins 33 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and third data transmission pin 27 and the first data transmission of storage card draw Foot 25 is adjacent.

Region of the second data transmission pin 26 of storage card on the card body of storage card is passed with the data of Nano-SIM cards Region of the defeated pin 34 on the card body of Nano-SIM cards is corresponding.

Region of the control signal pins 23 of storage card on the card body of storage card, with the program voltages of Nano-SIM cards/ Region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding.

4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card it is adjacent and isolation setting, the 4th number According to region of the earth signal pin 24 of transmission pin 28 and storage card on the card body of storage card, the earth signal with Nano-SIM cards Region of the pin 36 on the card body of Nano-SIM cards is corresponding, and the control signal of the 4th data transmission pin 28 and storage card Pin 23 is adjacent.

In the present embodiment, specifically, as shown in Fig. 2, on the card body of existing Nano-SIM cards setting there are one when 31, reset signals of clock signal (clock, CLK) pin (reset signal, RST) pin, 32, power supply (power Supply, VCC) 33, data transmissions of pin (data line, DAT) 34, program voltage/input signals of pin 35, earth signals of (programming voltage/input signal, VPP) pin (power supply ground, GND) pin 36.For example, CLK pin 31, RST pins 32,33 three of VCC pin central point be located at same straight line On, DAT pins 34, VPP pins 35,36 three of GND pin central point be located on the same line, this two straight lines are parallel 's.

As shown in figure 3, the memory card interface of storage card provided by the embodiments of the present application has included at least Clock Signal pin 21, power pins 22, control signal (command/response, CMD) pin 23, earth signal pin 24, first data transmission Pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

As shown in figure 3, in the present embodiment, the region of the Clock Signal pin 21 of storage card on the card body of storage card, It is corresponding with region of the Clock Signal pin 31 of Nano-SIM cards on the card body of Nano-SIM cards, wherein here " opposite Answer " it may also be referred to as the Clock Signal pin 21 of storage card and the mapping of Clock Signal pin 31 of Nano-SIM cards, i.e. storage card Clock Signal pin 21 and the Clock Signal pins 31 of Nano-SIM cards correspond to/have mapped the same bullets of Nano-SIM decks Piece；Region of the first data transmission pin 25 of storage card on the card body of storage card, draws with the reset signal of Nano-SIM cards Region of the foot 32 on the card body of Nano-SIM cards is corresponding, wherein " corresponding " here can also claim the first of storage card The reset signal pin 32 of data transmission pin 25 and Nano-SIM cards maps, i.e., the first data transmission pin 25 of storage card and The reset signal pin 32 of Nano-SIM cards corresponds to/has mapped the same shrapnel of Nano-SIM decks；In turn, storage card when Clock signal pins 21 are adjacent with the first data transmission pin 25 of storage card and setting is isolated.Also, the third data of storage card The power pins 22 of transmission pin 27 and storage card are adjacent and isolation is arranged, the power supply of third data transmission pin 27 and storage card Region of the pin 22 on the card body of storage card, with the area of the power pins 33 of Nano-SIM cards on the card body of Nano-SIM cards Domain is corresponding, and third data transmission pin 27 is adjacent with the first data transmission pin 25 of storage card and setting is isolated, wherein this In " corresponding " both power pins 22 of third data transmission pin 27 and storage card can also be claimed to be and Nano-SIM cards Power pins 33 map, i.e. 22 two pins of the power pins of third data transmission pin 27 and storage card and Nano- The power pins 33 of SIM card correspond to/have mapped the same shrapnel of Nano-SIM decks.In turn, the clock signal of storage card is drawn Foot 21, the first data transmission pin 25 of storage card, the third data transmission pin 27 of storage card and the power pins of storage card 22 or more four regions of the pin on the card body of storage card, relative to the Clock Signal pin 31 in Nano-SIM cards, reset The region of signal pins 32 and power pins 33 on the card body of Nano-SIM cards is corresponding, and then ensures the present embodiment The storage card of offer can share the same Nano-SIM decks with Nano-SIM cards.It is found that by the power supply on Nano-SIM cards The region of pin 33 is split as two pins, and then has obtained the third data transmission pin 27 of storage card and the power supply of storage card Pin 22, wherein shape, the size of the third data transmission pin 27 of storage card and the power pins 22 of storage card do not limit It is fixed.Also, the Clock Signal pin 21 of storage card and shape, the size of the first data transmission pin 25 of storage card do not limit It is fixed.

Region of the second data transmission pin 26 of storage card on the card body of storage card is passed with the data of Nano-SIM cards Region of the defeated pin 34 on the card body of Nano-SIM cards is corresponding；Card body of the control signal pins 23 of storage card in storage card On region, it is opposite with the program voltage of Nano-SIM cards/region of the input signal pin 35 on the card body of Nano-SIM cards It answers；In turn, the second data transmission pin 26 of storage card is adjacent with the control signal pins 23 of storage card and setting is isolated.And And the 4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card it is adjacent and isolation setting, the 4th data pass Region of the earth signal pin 24 of defeated pin 28 and storage card on the card body of storage card, the earth signal pin with Nano-SIM cards 36 region on the card body of Nano-SIM cards is corresponding, the control signal pins 23 of the 4th data transmission pin 28 and storage card Adjacent and isolation setting.In turn, the second data transmission pin 26, the control signal pins 23 of storage card, the storage card of storage card The 4th data transmission pin 28 and storage card 24 or more four regions of the pin on the card body of storage card of earth signal pin, Exist relative to data transmission pin 34, program voltage/input signal pin 35, the earth signal pin 36 in Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and then ensures that storage card provided in this embodiment can be with Nano-SIM Card shares the same Nano-SIM decks.Draw it is found that the region of the earth signal pin 36 on Nano-SIM cards is split as two Foot, and then obtained the 4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card, wherein the of storage card Shape, the size of the earth signal pin 24 of four data transmission pins 28 and storage card do not limit.Also, the second number of storage card It is not limited according to transmission pin 26 and shape, the size of the control signal pins 23 of storage card.

Also, Fig. 3 a are that the structural schematic diagram two of another storage card provided by the embodiments of the present application is deposited as shown in Figure 3a The shape of each pin (or contact or connection terminal) of card storage does not limit, and each pin (or contact or connection terminal) can be Irregular shape；It can be seen that, can there is no spacing between each pin (or contact or connection terminal) of storage card from Fig. 3 a , and then the cabling of storage card can be inside the card body of storage card, cabling is used to storage unit connecting with control unit, Cabling is additionally operable to control unit connecting with memory card interface.Fig. 3 b are the knot of another storage card provided by the embodiments of the present application Structure schematic diagram three can have spacing between each pin (or contact or connection terminal) of storage card as shown in Figure 3b, And each pin (or contact or connection terminal) can also be to have spacing between the edge of storage card, it is known that on storage card Each pin is not paved with the card body surface of storage card, these spacing are all the regions on the card body surface of storage card, and then these Region can be used for that cabling is arranged, i.e., cabling is laid in the spacing between each pin (or contact or connection terminal) and Each pin (or contact or connection terminal) is in the spacing between the edge of storage card, and cabling be used for by storage unit with Control unit connects, and cabling is additionally operable to control unit connecting with memory card interface.

Also, the structural schematic diagram four that Fig. 3 c are another storage card provided by the embodiments of the present application, as shown in Figure 3c, In the case of Fig. 3 a, under the shape shown in Fig. 3 a of earth signal pin 24 of storage card, referring to the region that Fig. 3 c bends are filled, figure Earth signal pin 24 of the region of 3c bends filling as storage card.

Shape, the spacing of each pin (or contact or connection terminal) can be with reference to the present embodiment in following embodiment In each pin (or contact or connection terminal) shape, spacing description.

In the attached drawing of following embodiment, CLK is marked as in the Clock Signal pin 21 of storage card, and the power supply of storage card draws VCC is marked as in foot 22, and CMD is marked as in the control signal pins 23 of storage card, and the earth signal pin 24 of storage card is labeled as D0 is marked as in GND, the first data transmission pin 25 of storage card, and the second data transmission pin 26 of storage card is marked as D2 is marked as in the third data transmission pin 27 of D1, storage card, and D3 is marked as in the 4th data transmission pin 28 of storage card.

Fig. 4 is the structural schematic diagram one of another storage card provided by the embodiments of the present application, and embodiment shown in Fig. 1 provides Storage card on the basis of, as shown in figure 4, storage card includes four data transmission pins, four data transmission pins are respectively First data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

The third data transmission pin 27 of storage card and the Clock Signal pin 21 of storage card it is adjacent and isolation setting, third Region of the Clock Signal pin 21 of data transmission pin 27 and storage card on the card body of storage card, with Nano-SIM cards when Region of the clock signal pins 31 on the card body of Nano-SIM cards is corresponding.

Region of the first data transmission pin 25 of storage card on the card body of storage card, the reset with Nano-SIM cards are believed Number region of the pin 32 on the card body of Nano-SIM cards is corresponding, and the Clock Signal pin 21 of storage card and the first data pass Defeated pin 25 is adjacent.

Region of the power pins 22 of storage card on the card body of storage card, exists with the power pins 33 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding.

The 26 adjacent and isolation setting of the second data transmission pin of the 4th data transmission pin 28 and storage card of storage card, The region of 4th data transmission pin 28 and the second data transmission pin 26 on the card body of storage card, the number with Nano-SIM cards It is corresponding according to region of the transmission pin 34 on the card body of Nano-SIM cards.

Region of the control signal pins 23 of storage card on the card body of storage card, with the program voltages of Nano-SIM cards/ Region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the second data transmission pin 26 and storage card It is adjacent to control signal pins 23.

Region of the earth signal pin 24 of storage card on the card body of storage card, the earth signal pin 36 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding.

In the present embodiment, specifically, according to the layout of the above pin it is found that the third data transmission pin of storage card 27,22 or more the power pins of the Clock Signal pin 21 of storage card, the first data transmission pin 25 of storage card and storage card Region of four pins on the card body of storage card, draws relative to the Clock Signal pin 31 in Nano-SIM cards, reset signal The region of foot 32 and power pins 33 on the card body of Nano-SIM cards is corresponding.It is found that by Nano-SIM cards The region of Clock Signal pin 31 is split as two pins, and then has obtained third data transmission pin 27 and the storage of storage card The Clock Signal pin 21 of card, wherein the third data transmission pin 27 of storage card and the Clock Signal pin 21 of storage card Shape, size do not limit.Also, the shape of the first data transmission pin 25 of storage card and the power pins 22 of storage card, Size does not limit.

The control letter of 4th data transmission pin 28 of storage card, the second data transmission pin 26 of storage card, storage card 24 or more four regions of the pin on the card body of storage card of earth signal pin of number pin 23 and storage card, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding, and then it is same to ensure that storage card provided in this embodiment can be shared with Nano-SIM cards Nano-SIM decks, for example, region of above four pins on the card body of storage card, relative in Nano-SIM cards Data transmission pin 34, program voltage/region of input signal pin 35, earth signal pin 36 on the card body of Nano-SIM cards It is identical.It is found that the region of the data transmission pin 34 of Nano-SIM cards is split as two pins, and then stored Second data transmission pin 26 of the 4th data transmission pin 28 and storage card of card, wherein the 4th data transmission of storage card Shape, the size of second data transmission pin 26 of pin 28 and storage card do not limit.Also, the control signal of storage card draws Shape, the size of the earth signal pin 24 of foot 23 and storage card do not limit.

Also, Fig. 4 a are that the structural schematic diagram two of another storage card provided by the embodiments of the present application is deposited as shown in fig. 4 a The shape of each pin (or contact or connection terminal) of card storage does not limit, and each pin (or contact or connection terminal) can be Irregular shape.Also, between can having between each pin (or contact or connection terminal) of the storage card in the present embodiment Away from, and then the cabling of storage card can be arranged on the surface of these spacing；Can also there is no spacing, and then storage card is walked Line can be inside the card body of storage card.

In the present embodiment, " corresponding " may also be referred to as mapping relations, for example, the first data transmission pin of storage card 25 region on the card body of storage card, with the area of the reset signal pins 32 of Nano-SIM cards on the card body of Nano-SIM cards Domain is corresponding, and the reset signal pin 32 of the first data transmission pin 25 for referring to storage card and Nano-SIM cards maps, i.e., The first data transmission pin 25 of storage card is corresponding with the reset signal pin 32 of Nano-SIM cards/have mapped Nano-SIM decks The same shrapnel.

Fig. 5 is the structural schematic diagram of another storage card provided by the embodiments of the present application, what embodiment shown in Fig. 1 provided On the basis of storage card, as shown in figure 5, storage card includes four data transmission pins, four data transmission pins are respectively the One data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

The first data transmission pin 25 of storage card and the third data transmission pin 27 of storage card it is adjacent and isolation setting, The region of first data transmission pin 25 and third data transmission pin 27 on the card body of storage card, with answering for Nano-SIM cards Position region of the signal pins 32 on the card body of Nano-SIM cards is corresponding, and first data transmission pin 25 and storage card when Clock signal pins 21 are adjacent.

Region of the power pins 22 of storage card on the card body of storage card, exists with the power pins 33 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and third data transmission pin 27 is adjacent with the power pins 22 of storage card.

The control signal pins 23 of storage card and the 28 adjacent and isolation setting of the 4th data transmission pin of storage card, storage Region of the control signal pins 23 and the 4th data transmission pin 28 of card on the card body of storage card, the volume with Nano-SIM cards Journey voltage/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the control signal pins of storage card 23 is adjacent with the second data transmission pin 26 of storage card.

Region of the earth signal pin 24 of storage card on the card body of storage card, the earth signal pin 36 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and 24 phase of earth signal pin of the 4th data transmission pin 28 and storage card It is adjacent.

In the present embodiment, specifically, according to the layout of the above pin it is found that the Clock Signal pin 21 of storage card, depositing The power pins 22 or more four of the first data transmission pin 25 of card storage, the third data transmission pin 27 of storage card and storage card Region of a pin on the card body of storage card, relative to Clock Signal pin 31, the reset signal pin in Nano-SIM cards 32 and region of the power pins 33 on the card body of Nano-SIM cards be corresponding.It is found that by the reset of Nano-SIM cards The region of signal pins 32 is split as two pins, and then has obtained the first data transmission pin 25 and storage card of storage card Third data transmission pin 27, wherein the first data transmission pin 25 of storage card and the third data transmission pin of storage card 27 shape, size do not limit.Also, the shape of the Clock Signal pin 21 of storage card and the power pins 22 of storage card, Size does not limit.

Second data transmission pin 26 of storage card, the control signal pins 23 of storage card, the 4th data of storage card pass 24 or more four regions of the pin on the card body of storage card of earth signal pin of defeated pin 28 and storage card, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the program voltage of Nano-SIM cards/input signal pin 35 is split as two A pin, and then obtained the control signal pins 23 of storage card and the 4th data transmission pin 28 of storage card, wherein storage The control signal pins 23 of card and shape, the size of the 4th data transmission pin 28 of storage card do not limit.Also, storage card The second data transmission pin 26 and shape, the size of earth signal pin 24 of storage card do not limit.

Also, there can be spacing between each pin (or contact or connection terminal) of the storage card in the present embodiment, into And the cabling of storage card can be arranged on the surface of these spacing；Can also there is no spacing, and then the cabling of storage card can To be inside the card body of storage card.

In the present embodiment, " corresponding " may also be referred to as mapping relations, for example, the Clock Signal pin 21 of storage card exists Region on the card body of storage card, with the region phase of the Clock Signal pins 31 of Nano-SIM cards on the card body of Nano-SIM cards It is corresponding, refer to the Clock Signal pin 21 of storage card and the mapping of Clock Signal pin 31 of Nano-SIM cards, i.e. storage card Clock Signal pin 21 is corresponding with the Clock Signal pin 31 of Nano-SIM cards/have mapped the same bullets of Nano-SIM decks Piece.

Fig. 6 is also a kind of structural schematic diagram of storage card provided by the embodiments of the present application, what embodiment shown in Fig. 1 provided On the basis of storage card, as shown in fig. 6, storage card includes four data transmission pins, four data transmission pins are respectively the One data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

The third data transmission pin 27 of storage card and the power pins 22 of storage card it is adjacent and isolation setting, third data Region of the power pins 22 of transmission pin 27 and storage card on the card body of storage card, the power pins 33 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and the power pins 22 of storage card and the first data transmission of storage card draw Foot 25 is adjacent；The area of the power pins 22 of storage card is more than the area of the third data transmission pin 27 of storage card.

4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card it is adjacent and isolation setting, the 4th number According to region of the earth signal pin 24 of transmission pin 28 and storage card on the card body of storage card, the earth signal with Nano-SIM cards Region of the pin 36 on the card body of Nano-SIM cards is corresponding, and the earth signal pin 24 of storage card and the control of storage card are believed Number pin 23 is adjacent；The area of the earth signal pin 24 of storage card is more than the area of the 4th data transmission pin 28 of storage card.

In the present embodiment, specifically, according to the layout of the above pin it is found that the Clock Signal pin 21 of storage card, depositing The third data transmission pin 27 or more four of the first data transmission pin 25 of card storage, the power pins 22 of storage card and storage card Region of a pin on the card body of storage card, relative to Clock Signal pin 31, the reset signal pin in Nano-SIM cards 32 and region of the power pins 33 on the card body of Nano-SIM cards be corresponding.It is found that by the power supply of Nano-SIM cards The region of pin 33 is split as two pins, and then has obtained the power pins 22 of storage card and the third data transmission of storage card Pin 27, in the present embodiment, the power pins 22 of storage card are adjacent with the first data transmission pin 25 of storage card.Wherein, The power pins 22 of storage card and shape, the size of the third data transmission pin 27 of storage card do not limit.Also, storage card Clock Signal pin 21, storage card shape, the size of first data transmission pin 25 do not limit.

The earth signal pin of second data transmission pin 26 of storage card, the control signal pins 23 of storage card, storage card 24 and storage card 28 or more four regions of the pin on the card body of storage card of the 4th data transmission pin, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the earth signal pin 36 on Nano-SIM cards is split as two pins, into And the earth signal pin 24 of storage card and the 4th data transmission pin 28 of storage card have been obtained, and in the present embodiment, storage card Earth signal pin 24 it is adjacent with the control signal pins 23 of storage card.Wherein, the earth signal pin 24 and storage card of storage card Shape, the size of the 4th data transmission pin 28 do not limit.Also, the second data transmission pin 26, the storage of storage card Shape, the size of the control signal pins 23 of card do not limit.

Further, the area of the power pins 22 of storage card is more than the face of the third data transmission pin 27 of storage card Product, the area of the earth signal pin 24 of storage card are more than the area of the 4th data transmission pin 28 of storage card.To newly-increased The third data transmission pin 27 of storage card and 28 signal of the 4th data transmission pin of storage card are placed toward card outside as possible；And And position of the central point of the power pins 22 of storage card on the card body of storage card, correspond to the electricity of Nano-SIM cards as possible Position of the source pin 33 on the card body of Nano-SIM cards；Card body of the central point of the earth signal pin 24 of storage card in storage card On position, correspond to position of the earth signal pin 36 on the card body of Nano-SIM cards of Nano-SIM cards as possible；And then it can To increase the tolerance margins of Nano-SD cards.

For example, according to the viewing angles of Fig. 6, from right to left, the third data transmission pin 27 of storage card has the On one side, the second side, storage card have first side, second side；First back gauge of the third data transmission pin 27 of storage card The length of first side from storage card is 1 millimeter, and tolerance is 0.1 millimeter；The of the third data transmission pin 27 of storage card The length of the first side of two back gauge storage cards is 4.9 millimeters, and tolerance is 0.1 millimeter；The third data transmission of storage card is drawn The length of the second side of first back gauge storage card of foot 27 is 11.3 millimeters, and tolerance is 0.1 millimeter；The third number of storage card Length according to the second side of the second back gauge storage card of transmission pin 27 is 7.55 millimeters, and tolerance is 0.1 millimeter.

According to the viewing angles of Fig. 6, from right to left, the 4th data transmission pin 28 of storage card has the first side, second Side；The length of the first side of first back gauge storage card of the 4th data transmission pin 28 of storage card is 7.55 millimeters, public Difference is 0.1 millimeter；The length of the first side of second back gauge storage card of the 4th data transmission pin 28 of storage card is 11.3 millimeters, tolerance is 0.1 millimeter；The second side of first back gauge storage card of the 4th data transmission pin 28 of storage card Length be 4.9 millimeters, tolerance be 0.1 millimeter；Second back gauge storage card of the 4th data transmission pin 28 of storage card The length of second side is 1 millimeter, and tolerance is 0.1 millimeter.The first of other pins in figure 6 while, second while distance respectively The first side of storage card, the second side of storage card length be referred to above-mentioned data.

According to the viewing angles of Fig. 6, from top to bottom, storage card has third side, four side, the 4th number of storage card According to transmission pin 28 have third while, the 4th while, the earth signal pin 24 of storage card have third while, the 4th while, storage card Control signal pins 23 have third while, the 4th while, the second data transmission pin 26 of storage card have third while, the 4th while. The length of the third side of the third back gauge storage card of 4th data transmission pin 28 of storage card is up to 0.2 millimeter, deposits The length of the third side of 4th back gauge storage card of the 4th data transmission pin 28 of card storage is up to 1.05 millimeters.Storage The length of the third side of the third back gauge storage card of the earth signal pin 24 of card is up to 1.4 millimeters；Believe on the ground of storage card The length of the third side of 4th back gauge storage card of number pin 24 is 2.6 millimeters, and tolerance is 0.1 millimeter.The control of storage card The length of the third side of the third back gauge storage card of signal pins 23 processed is up to 3.35 millimeters, and tolerance is 0.1 millimeter；It deposits The length of the third side of 4th back gauge storage card of the control signal pins 23 of card storage is 5.25 millimeters, and tolerance is 0.1 milli Rice.The length of the third side of the third back gauge storage card of second data transmission pin 26 of storage card is up to 6.05 millis Rice, tolerance are 0.1 millimeter；The length of the third side of 4th back gauge storage card of the second data transmission pin 26 of storage card It it is 7.95 millimeters, tolerance is 0.1 millimeter.8.8 millimeters of distance between the third side and the four side of storage card of storage card, it is public Difference is 0.1 millimeter.

Fig. 7 is other a kind of structural schematic diagrams of storage card provided by the embodiments of the present application, and embodiment shown in Fig. 1 provides Storage card on the basis of, as shown in fig. 7, storage card includes four data transmission pins, four data transmission pins are respectively First data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

The Clock Signal pin 21 that the third data transmission pin 27 of storage card is located at storage card draws with the second data transmission Between foot 26, and third data transmission pin 27 respectively with the Clock Signal pin of storage card 21, the second data transmission pin 26 Isolation setting, the central point of third data transmission pin 27 are located at the central point and the second number of the Clock Signal pin 21 of storage card On connecting line according to the central point of transmission pin 26.

4th data transmission pin 28 of storage card is located at the power pins 22 of storage card and the earth signal pin of storage card Between 24, and the 4th data transmission pin 28 is isolated with the earth signal pin 24 of the power pins of storage card 22, storage card respectively Setting, the central point of the 4th data transmission pin 28 are located at the earth signal of the central point and storage card of the power pins 22 of storage card On the connecting line of the central point of pin 24.

In the present embodiment, specifically, according to the layout of the above pin it is found that the Clock Signal pin 21 of storage card, depositing The area of the first data transmission pin 25 of card storage and the 22 three above pin of power pins of storage card on the card body of storage card Domain, relative to Clock Signal pin 31, reset signal pin 32 and the power pins 33 in Nano-SIM cards in Nano-SIM Region on the card body of card is corresponding.

The second data transmission pin 26, the control signal pins 23 of storage card and the earth signal pin of storage card of storage card Region of the 24 three above pins on the card body of storage card, relative to the data transmission pin 34 in Nano-SIM cards, programming Voltage/the region of input signal pin 35, earth signal pin 36 on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card is arranged in the Clock Signal pin 21 and storage for being located at storage card Between second data transmission pin 26 of card, it is preferred that the central point of the third data transmission pin 27 of storage card is located at storage On the connecting line of the central point of the central point of the Clock Signal pin 21 of card and the second data transmission pin 26 of storage card.Storage 4th data transmission pin 28 of card is arranged between the power pins 22 of storage card and the earth signal pin 24 of storage card, excellent Choosing, the central point of the 4th data transmission pin 28 of storage card is located at the central point and storage card of the power pins 22 of storage card Earth signal pin 24 central point connecting line on.

For example, according to the viewing angles of Fig. 7, from left to right, the Clock Signal pin 21 of storage card have the first side, There is first side, second side, the third data transmission pin 27 of storage card to have the first side, second for second side, storage card Side, the second data transmission pin 26 of storage card have first while, second while.First side of the Clock Signal pin 21 of storage card Length apart from the first side of storage card is up to 1.00 millimeters, and the second back gauge of the Clock Signal pin 21 of storage card is deposited Minimum 3.00 millimeters of the length of the first side of card storage.First back gauge of the third data transmission pin 27 of storage card stores The length of the first side of card is up to 4.81 millimeters, the second back gauge storage card of the third data transmission pin 27 of storage card First side minimum 6.81 millimeters of length.First back gauge storage card of the second data transmission pin 26 of storage card The length of first side is up to 8.62 millimeters, and the of the second back gauge storage card of the second data transmission pin 26 of storage card Minimum 10.02 millimeters of the length of a side.Distance value is between the first side of storage card and the second side of storage card 12.30 millimeters, tolerance is 0.1 millimeter.The second side of second back gauge storage card of the second data transmission pin 26 of storage card The length on side is 1.65 millimeters, and tolerance is 0.1 millimeter.The angle of the locating notch of storage card is 45 degree of angles.In the figure 7 other draw The first of foot while, second while length respectively apart from the first side of storage card, the second side of storage card be referred to it is above-mentioned Data.

According to the viewing angles of Fig. 7, from top to bottom, storage card has third side, four side, the second number of storage card According to transmission pin 26 have third while, the 4th while, the control signal pins 23 of storage card have third while, the 4th while, storage card Earth signal pin 24 have third while, the 4th while, the 4th data transmission pin 28 of storage card have third while, the 4th while, The third data transmission pin 27 of storage card have third while, the 4th while.The third of 4th data transmission pin 28 of storage card The length of the third side of back gauge storage card is up to 0.81 millimeter, the 4th side of the 4th data transmission pin 28 of storage card Minimum 2.51 millimeters of the length of third side apart from storage card.The third back gauge of the third data transmission pin 27 of storage card The length of third side from storage card is up to 6.29 millimeters, the 4th back gauge of the third data transmission pin 27 of storage card Minimum 7.99 millimeters of the length of the third side of storage card.The third back gauge storage card of the earth signal pin 24 of storage card The length of third side is up to 1.01 millimeters, the third side of the 4th back gauge storage card of the earth signal pin 24 of storage card Minimum 2.71 millimeters of length.The length of the third side of the third back gauge storage card of the control signal pins 23 of storage card It is up to 3.55 millimeters, the length of the third side of the 4th back gauge storage card of the control signal pins 23 of storage card is minimum 5.25 millimeter.The length of the third side of the third back gauge storage card of second data transmission pin 26 of storage card is up to 6.09 millimeters, the length of the third side of the 4th back gauge storage card of the second data transmission pin 26 of storage card is minimum 7.79 millimeter.Distance value is 8.80 millimeters between the third side and the four side of storage card of storage card, and tolerance is 0.1 milli Rice.

In the present embodiment, " corresponding " may also be referred to as mapping relations, for example, the power pins 22 of storage card are storing Region on the card body of card, it is corresponding with region of the power pins 33 of Nano-SIM cards on the card body of Nano-SIM cards, refer to Be that the power pins 33 of power pins 22 and Nano-SIM cards of storage card map, i.e., the power pins 22 of storage card and The power pins 33 of Nano-SIM cards correspond to/have mapped the same shrapnel of Nano-SIM decks.

Fig. 8 is also a kind of structural schematic diagram of storage card provided by the embodiments of the present application, and embodiment shown in Fig. 1 provides Storage card on the basis of, as shown in figure 8, storage card includes four data transmission pins, four data transmission pins are respectively First data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

Region of the second data transmission pin 26 of storage card on the card body of storage card is believed with the clock of Nano-SIM cards Number region of the pin 31 on the card body of Nano-SIM cards is corresponding.

Region of the control signal pins 23 of storage card on the card body of storage card, draws with the reset signal of Nano-SIM cards Region of the foot 32 on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card and the power pins 22 of storage card it is adjacent and isolation setting, third data Region of the power pins 22 of transmission pin 27 and storage card on the card body of storage card, the power pins 33 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and the control signal pins 23 of third data transmission pin 27 and storage card It is adjacent.

Region of the Clock Signal pin 21 of storage card on the card body of storage card, draws with the data transmission of Nano-SIM cards Region of the foot 34 on the card body of Nano-SIM cards is corresponding.

Region of the first data transmission pin 25 of storage card on the card body of storage card, the programming electricity with Nano-SIM cards Pressure/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding.

4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card it is adjacent and isolation setting, the 4th number According to region of the earth signal pin 24 of transmission pin 28 and storage card on the card body of storage card, the earth signal with Nano-SIM cards Region of the pin 36 on the card body of Nano-SIM cards is corresponding, and the first data of the 4th data transmission pin 28 and storage card It is adjacent to transmit pin 25.

In the present embodiment, specifically, the control signal pins of the second data transmission pin 26 of storage card, storage card 23,22 or more four pins of power pins of the third data transmission pin 27 of storage card and storage card are on the card body of storage card Region, relative to Clock Signal pin 31, reset signal pin 32 and the power pins 33 in Nano-SIM cards in Nano- Region on the card body of SIM card is corresponding.It is found that the region of the power pins 33 on Nano-SIM cards is split as two Pin, and then obtained the third data transmission pin 27 of storage card and the power pins 22 of storage card, wherein the of storage card Shape, the size of the power pins 22 of three data transmission pins 27 and storage card do not limit.Also, the second data of storage card Shape, the size of the control signal pins 23 of transmission pin 26, storage card do not limit.

In turn, the 4th number of the Clock Signal pin 21 of storage card, the first data transmission pin 25 of storage card, storage card According to transmission pin 28 and storage card 24 or more four regions of the pin on the card body of storage card of earth signal pin, relative to Data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in Nano-SIM cards is in Nano-SIM cards Card body on region be corresponding.Draw it is found that the region of the earth signal pin 36 on Nano-SIM cards is split as two Foot, and then obtained the 4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card, wherein the of storage card Shape, the size of the earth signal pin 24 of four data transmission pins 28 and storage card do not limit.Also, the clock of storage card is believed Number pin 21, storage card shape, the size of first data transmission pin 25 do not limit.

In the present embodiment, " corresponding " may also be referred to as mapping relations, for example, the second data transmission pin of storage card 26 region on the card body of storage card, with the area of the Clock Signal pins 31 of Nano-SIM cards on the card body of Nano-SIM cards Domain is corresponding, refers to that the Clock Signal pin 31 of the second data transmission pin 26 and Nano-SIM cards of storage card maps, i.e., Second data transmission pin 26 of storage card is corresponding with the Clock Signal pin 31 of Nano-SIM cards/have mapped Nano-SIM decks The same shrapnel.

Fig. 9 separately has a kind of structural schematic diagram of storage card, embodiment shown in Fig. 1 to provide to be provided by the embodiments of the present application Storage card on the basis of, as shown in figure 9, storage card includes four data transmission pins, four data transmission pins are respectively First data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28.

Region of the control signal pins 23 of storage card on the card body of storage card, draws with the reset signal of Nano-SIM cards Region of the foot 32 on the card body of Nano-SIM cards is corresponding, and the control signal pins of the clock signal of storage card and storage card 23 is adjacent.

Region of the earth signal pin 24 of storage card on the card body of storage card, exists with the power pins 33 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding.

Region of the first data transmission pin 25 of storage card on the card body of storage card, the programming electricity with Nano-SIM cards Pressure/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the second data transmission pin 26 and first Data transmission pin 25 is adjacent.

Region of the power pins 22 of storage card on the card body of storage card, exists with the earth signal pin 36 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding.

In the present embodiment, specifically, according to the layout of the above pin it is found that the third data transmission pin of storage card 27, the earth signal pin 24 or more four of the Clock Signal pin 21 of storage card, the control signal pins 23 of storage card and storage card Region of a pin on the card body of storage card, relative to Clock Signal pin 31, the reset signal pin in Nano-SIM cards 32 and region of the power pins 33 on the card body of Nano-SIM cards be corresponding.It is found that by Nano-SIM cards when The region of clock signal pins 31 is split as two pins, and then has obtained the third data transmission pin 27 and storage card of storage card Clock Signal pin 21, wherein the third data transmission pin 27 of storage card and the Clock Signal pin 21 of storage card it is outer Shape, size do not limit.Also, shape, the size of the control signal pins 23 of storage card and the earth signal pin 24 of storage card It does not limit.

First number of the 4th data transmission pin 28 of storage card, the second data transmission pin 26 of storage card, storage card According to transmission pin 25 and storage card 22 or more four regions of the pin on the card body of storage card of power pins, relative to Data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in Nano-SIM cards is in Nano-SIM cards Card body on region be corresponding.Draw it is found that the region of the data transmission pin 34 of Nano-SIM cards is split as two Foot, and then obtained the 4th data transmission pin 28 of storage card and the second data transmission pin 26 of storage card, wherein storage Shape, the size of 4th data transmission pin 28 of card and the second data transmission pin 26 of storage card do not limit.Also, it deposits Shape, the size of the first data transmission pin 25 of card storage and the power pins 22 of storage card do not limit.

In the present embodiment, " corresponding " may also be referred to as mapping relations, for example, the earth signal pin 24 of storage card is being deposited Region on the card body of card storage, it is corresponding with region of the power pins 33 of Nano-SIM cards on the card body of Nano-SIM cards, The power pins 33 of the earth signal pin 24 for referring to storage card and Nano-SIM cards map, i.e. the earth signal pin 24 of storage card It is corresponding with the power pins 3 of Nano-SIM cards/to have mapped the same shrapnels of Nano-SIM decks.

Figure 10 is provided by the embodiments of the present application and has a kind of structural schematic diagram of storage card, embodiment shown in Fig. 1 to carry On the basis of the storage card of confession, as shown in Figure 10, storage card includes four data transmission pins, four data transmission pin difference For first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28。

The first data transmission pin 25 of storage card and the third data transmission pin 27 of storage card it is adjacent and isolation setting, The region of first data transmission pin 25 and third data transmission pin 27 on the card body of storage card, with answering for Nano-SIM cards Position region of the signal pins 32 on the card body of Nano-SIM cards is corresponding, and the of first data transmission pin 25 and storage card Two data transmission pins 26 are adjacent.

The control signal pins 23 of storage card and the 28 adjacent and isolation setting of the 4th data transmission pin of storage card, storage Region of the control signal pins 23 and the 4th data transmission pin 28 of card on the card body of storage card, the volume with Nano-SIM cards Journey voltage/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the control signal pins of storage card 23 is adjacent with the Clock Signal pin 21 of storage card.

In the present embodiment, specifically, according to the layout of the above pin it is found that the second data transmission pin of storage card 26, the first data transmission pin 25 of storage card, the third data transmission pin 27 of storage card and the earth signal pin of storage card 24 or more four regions of the pin on the card body of storage card, relative to the Clock Signal pin 31 in Nano-SIM cards, reset The region of signal pins 32 and power pins 33 on the card body of Nano-SIM cards is corresponding.It is found that by Nano-SIM The region of the reset signal pin 32 of card is split as two pins, and then has obtained 25 He of first data transmission pin of storage card The third data transmission pin 27 of storage card, wherein the first data transmission pin 25 of storage card and the third data of storage card Shape, the size of transmission pin 27 do not limit.Also, the second data transmission pin 26 of storage card, the earth signal of storage card Shape, the size of pin 24 do not limit.

The Clock Signal pin 21 of storage card, the control signal pins 23 of storage card, the 4th data transmission of storage card are drawn 22 or more four regions of the pin on the card body of storage card of power pins of foot 28 and storage card, relative in Nano-SIM cards Data transmission pin 34, the program voltage/area of input signal pin 35, earth signal pin 36 on the card body of Nano-SIM cards Domain is corresponding.It is found that the region of the program voltage of Nano-SIM cards/input signal pin 35 is split as two pins, And then the control signal pins 23 of storage card and the 4th data transmission pin 28 of storage card are obtained, wherein the control of storage card Shape, the size of 4th data transmission pin 28 of signal pins 23 processed and storage card do not limit.Also, the clock of storage card Signal pins 21, the shape of the power pins of storage card 22, size do not limit.

Also, there can be spacing between each pin (or contact or connection terminal) of the storage card in the present embodiment, into And the cabling of storage card can be arranged on the surface of these spacing；Can also there is no spacing, and then the cabling of storage card can To be inside the card body of storage card.In the present embodiment, " corresponding " may also be referred to as mapping relations, may refer to above-mentioned reality Apply the introduction of example.

Figure 11 has a kind of structural schematic diagram of storage card, embodiment shown in Fig. 1 to carry again to be provided by the embodiments of the present application On the basis of the storage card of confession, as shown in figure 11, storage card includes four data transmission pins, four data transmission pin difference For first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28。

Region of 23 pin of control signal pins of storage card on the card body of storage card, the reset with Nano-SIM cards are believed Number region of the pin 32 on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card and the power pins 22 of storage card it is adjacent and isolation setting, third data Region of the power pins 22 of transmission pin 27 and storage card on the card body of storage card, the power pins 33 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and the control signal pins 23 of the power pins 22 of storage card and storage card It is adjacent；The area of the power pins 22 of storage card is more than the area of the third data transmission pin 27 of storage card.

Region of the first data transmission of storage card on the card body of storage card, with the program voltage of Nano-SIM cards/defeated It is corresponding to enter region of the signal pins 35 on the card body of Nano-SIM cards.

4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card it is adjacent and isolation setting, the 4th number According to region of the earth signal pin 24 of transmission pin 28 and storage card on the card body of storage card, the earth signal with Nano-SIM cards Region of the pin 36 on the card body of Nano-SIM cards is corresponding, and the first number of the earth signal pin 24 of storage card and storage card It is adjacent according to transmitting；The area of the earth signal pin 24 of storage card is more than the area of the 4th data transmission pin 28 of storage card.

In the present embodiment, specifically, according to the layout of the above pin it is found that the second data transmission pin of storage card 26,27 or more the third data transmission pin of the control signal pins 23, the power pins of storage card 22 of storage card and storage card Region of four pins on the card body of storage card, draws relative to the Clock Signal pin 31 in Nano-SIM cards, reset signal The region of foot 32 and power pins 33 on the card body of Nano-SIM cards is corresponding.It is found that by the electricity of Nano-SIM cards The region of source pin 33 is split as two pins, and then has obtained the power pins 22 of storage card and the third data biography of storage card Defeated pin 27, in the present embodiment, the power pins 22 of storage card are adjacent with the control signal pins 23 of storage card.Wherein, it deposits The power pins 22 of card storage and shape, the size of the third data transmission pin 27 of storage card do not limit.Also, storage card Shape, the size of the control signal pins 23 of second data transmission pin 26, storage card do not limit.

The earth signal pin of the Clock Signal pin 21 of storage card, the first data transmission pin 25 of storage card, storage card 24 and storage card 28 or more four regions of the pin on the card body of storage card of the 4th data transmission pin, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the earth signal pin 36 on Nano-SIM cards is split as two pins, into And the earth signal pin 24 of storage card and the 4th data transmission pin 28 of storage card have been obtained, and in the present embodiment, storage card Earth signal pin 24 it is adjacent with the first data transmission pin 25 of storage card.Wherein, it the earth signal pin 24 of storage card and deposits Shape, the size of 4th data transmission pin 28 of card storage do not limit.Also, Clock Signal pin 21, the storage of storage card Shape, the size of the first data transmission pin 25 of card do not limit.

Figure 12, which is provided by the embodiments of the present application other, a kind of structural schematic diagram of storage card, embodiment shown in Fig. 1 On the basis of the storage card of offer, as shown in figure 12, storage card includes four data transmission pins, four data transmission pins point Not Wei first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission draw Foot 28.

Region of the control signal pins 23 of storage card on the card body of storage card, with the program voltages of Nano-SIM cards/ Region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding；

4th data transmission pin 28 of storage card is located at the Clock Signal pin 21 of storage card and the second data transmission is drawn Between foot 26, and the 4th data transmission pin 28 respectively with the Clock Signal pin of storage card 21, the second data transmission pin 26 Isolation setting, the central point of the 4th data transmission pin 28 are located at the central point and the second number of the Clock Signal pin 21 of storage card On connecting line according to the central point of transmission pin 26.

The third data transmission pin 27 of storage card is located at the earth signal pin of the power pins 22 and storage card of storage card Between 24, and third data transmission pin 27 is isolated with the earth signal pin 24 of the power pins of storage card 22, storage card respectively Setting, the central point of third data transmission pin 27 are located at the earth signal of the central point and storage card of the power pins 22 of storage card On the connecting line of the central point of pin 24.

4th data transmission pin 28 of storage card is arranged in the Clock Signal pin 21 and storage for being located at storage card Between second data transmission pin 26 of card, it is preferred that the central point of the 4th data transmission pin 28 of storage card is located at storage On the connecting line of the central point of the central point of the Clock Signal pin 21 of card and the second data transmission pin 26 of storage card.Storage The third data transmission pin 27 of card is arranged between the power pins 22 of storage card and the earth signal pin 24 of storage card, excellent Choosing, the central point of the third data transmission pin 27 of storage card is located at the central point and storage card of the power pins 22 of storage card Earth signal pin 24 central point connecting line on.

Figure 13 is provided by the embodiments of the present application other a kind of structural schematic diagram of storage card, implementation shown in Fig. 1 again On the basis of the storage card that example provides, as shown in figure 13, storage card includes four data transmission pins, four data transmission pins Respectively first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission Pin 28.

Region of the first data transmission pin 25 of storage card on the card body of storage card is believed with the clock of Nano-SIM cards Number region of the pin 31 on the card body of Nano-SIM cards is corresponding.

Region of the Clock Signal pin 21 of storage card on the card body of storage card, draws with the reset signal of Nano-SIM cards Region of the foot 32 on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card and the power pins 22 of storage card it is adjacent and isolation setting, third data Region of the power pins 22 of transmission pin 27 and storage card on the card body of storage card, the power pins 33 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and the Clock Signal pin 21 of third data transmission pin 27 and storage card It is adjacent.

Region of the control signal pins 23 of storage card on the card body of storage card, draws with the data transmission of Nano-SIM cards Region of the foot 34 on the card body of Nano-SIM cards is corresponding.

Region of the second data transmission pin 26 of storage card on the card body of storage card, the programming electricity with Nano-SIM cards Pressure/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding.

4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card it is adjacent and isolation setting, the 4th number According to region of the earth signal pin 24 of transmission pin 28 and storage card on the card body of storage card, the earth signal with Nano-SIM cards Region of the pin 36 on the card body of Nano-SIM cards is corresponding, and the second data of the 4th data transmission pin 28 and storage card It is adjacent to transmit pin 26.

In the present embodiment, specifically, according to the layout of the above pin it is found that the first data transmission pin of storage card 25,22 or more the power pins of the Clock Signal pin 21 of storage card, the third data transmission pin 27 of storage card and storage card Region of four pins on the card body of storage card, draws relative to the Clock Signal pin 31 in Nano-SIM cards, reset signal The region of foot 32 and power pins 33 on the card body of Nano-SIM cards is corresponding.It is found that by Nano-SIM cards The region of power pins 33 is split as two pins, and then has obtained the third data transmission pin 27 and storage card of storage card Power pins 22, wherein shape, the size of the third data transmission pin 27 of storage card and the power pins 22 of storage card are not done It limits.Also, shape, the size of the first data transmission pin 25 of storage card, the Clock Signal pin 21 of storage card do not limit It is fixed.

The 4th data biography of the control signal pins 23 of storage card, the second data transmission pin 26 of storage card, storage card 24 or more four regions of the pin on the card body of storage card of earth signal pin of defeated pin 28 and storage card, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the earth signal pin 36 on Nano-SIM cards is split as two pins, into And the 4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card are obtained, wherein the 4th number of storage card It is not limited according to shape, the size of transmission pin 28 and the earth signal pin 24 of storage card.Also, the control signal of storage card draws Foot 23, storage card shape, the size of the second data transmission pin 26 do not limit.

Figure 14, which is provided by the embodiments of the present application other, separately a kind of structural schematic diagram of storage card, implementation shown in Fig. 1 On the basis of the storage card that example provides, as shown in figure 14, storage card includes four data transmission pins, four data transmission pins Respectively first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission Pin 28.

The third data transmission pin 27 of storage card and the power pins 22 of storage card it is adjacent and isolation setting, third data Region of the power pins 22 of transmission pin 27 and storage card on the card body of storage card, the power pins 33 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and the Clock Signal pin 21 of the power pins 22 of storage card and storage card It is adjacent；The area of the power pins 22 of storage card is more than the area of the third data transmission pin 27 of storage card.

4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card it is adjacent and isolation setting, the 4th number According to region of the earth signal pin 24 of transmission pin 28 and storage card on the card body of storage card, the earth signal with Nano-SIM cards Region of the pin 36 on the card body of Nano-SIM cards is corresponding, and the second number of the earth signal pin 24 of storage card and storage card It is adjacent according to transmission pin 26；The area of the earth signal pin 24 of storage card is more than the face of the 4th data transmission pin 28 of storage card Product.

In the present embodiment, specifically, according to the layout of the above pin it is found that the first data transmission pin of storage card 25,27 or more the third data transmission pin of the Clock Signal pin 21 of storage card, the power pins 22 of storage card and storage card Region of four pins on the card body of storage card, draws relative to the Clock Signal pin 31 in Nano-SIM cards, reset signal The region of foot 32 and power pins 33 on the card body of Nano-SIM cards is corresponding.It is found that by the electricity of Nano-SIM cards The region of source pin 33 is split as two pins, and then has obtained the power pins 22 of storage card and the third data biography of storage card Defeated pin 27, in the present embodiment, the power pins 22 of storage card are adjacent with the Clock Signal pin 21 of storage card.Wherein, it deposits The power pins 22 of card storage and shape, the size of the third data transmission pin 27 of storage card do not limit.Also, storage card First data transmission pin 25, storage card shape, the size of Clock Signal pin 21 do not limit.

The earth signal pin of the control signal pins 23 of storage card, the second data transmission pin 26 of storage card, storage card 24 and storage card 28 or more four regions of the pin on the card body of storage card of the 4th data transmission pin, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the earth signal pin 36 on Nano-SIM cards is split as two pins, into And the earth signal pin 24 of storage card and the 4th data transmission pin 28 of storage card have been obtained, and in the present embodiment, storage card Earth signal pin 24 it is adjacent with the second data transmission pin 26 of storage card.Wherein, it the earth signal pin 24 of storage card and deposits Shape, the size of 4th data transmission pin 28 of card storage do not limit.Also, control signal pins 23, the storage of storage card Shape, the size of second data transmission pin 26 of card do not limit.

Figure 15 is provided by the embodiments of the present application other a kind of structural schematic diagram of storage card, implementation shown in Fig. 1 again On the basis of the storage card that example provides, as shown in figure 15, storage card includes four data transmission pins, four data transmission pins Respectively first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission Pin 28.

Region of the first data transmission pin 25 of storage card on the card body of storage card, the reset with Nano-SIM cards are believed Number region of the pin 32 on the card body of Nano-SIM cards is corresponding, and the third data transmission pin 27 and first of storage card counts It is adjacent according to transmission pin 25.

Region of the control signal pins 23 of storage card on the card body of storage card, with the program voltages of Nano-SIM cards/ Region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the 4th data transmission pin 28 of storage card with The control signal pins 23 of storage card are adjacent.

In the present embodiment, specifically, according to the layout of the above pin it is found that the Clock Signal pin 21 of storage card, depositing The power pins 22 or more four of the third data transmission pin 27 of card storage, the first data transmission pin 25 of storage card and storage card Region of a pin on the card body of storage card, relative to Clock Signal pin 31, the reset signal pin in Nano-SIM cards 32 and region of the power pins 33 on the card body of Nano-SIM cards be corresponding.It is found that by Nano-SIM cards when The region of clock signal pins 31 is split as two pins, and then has obtained the third data transmission pin 27 and storage card of storage card Clock Signal pin 21, wherein the third data transmission pin 27 of storage card and the Clock Signal pin 21 of storage card it is outer Shape, size do not limit.Also, the shape of the first data transmission pin 25 of storage card and the power pins 22 of storage card, ruler It is very little not limit.

The control letter of second data transmission pin 26 of storage card, the 4th data transmission pin 28 of storage card, storage card 24 or more four regions of the pin on the card body of storage card of earth signal pin of number pin 23 and storage card, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the data transmission pin 34 of Nano-SIM cards is split as two pins, into And the 4th data transmission pin 28 of storage card and the second data transmission pin 26 of storage card are obtained, wherein storage card Shape, the size of second data transmission pin 26 of the 4th data transmission pin 28 and storage card do not limit.Also, storage card Control signal pins 23 and shape, the size of earth signal pin 24 of storage card do not limit.

Figure 16 is that provided by the embodiments of the present application there is also a kind of structural schematic diagram of storage card, implementations shown in Fig. 1 On the basis of the storage card that example provides, as shown in figure 16, storage card includes four data transmission pins, four data transmission pins Respectively first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission Pin 28.

Region of the control signal pins 23 of storage card on the card body of storage card, draws with the reset signal of Nano-SIM cards Region of the foot 32 on the card body of Nano-SIM cards is corresponding, and the control of the third data transmission pin 27 and storage card of storage card Signal pins 23 processed are adjacent.

Region of the first data transmission pin 25 of storage card on the card body of storage card, the programming electricity with Nano-SIM cards Pressure/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the 4th data transmission pin of storage card 28 is adjacent with first data transmission pin 25.

In the present embodiment, specifically, according to the layout of the above pin it is found that the Clock Signal pin 21 of storage card, depositing The earth signal pin of the third data transmission pin 27 of card storage, the control signal pins 23 of storage card and storage card 24 or more four Region of the pin on the card body of storage card, relative to Clock Signal pin 31, the reset signal pin 32 in Nano-SIM cards And region of the power pins 33 on the card body of Nano-SIM cards is corresponding.It is found that by the clock on Nano-SIM cards The region of signal pins 31 is split as two pins, and then has obtained the third data transmission pin 27 and storage card of storage card Clock Signal pin 21, wherein the shape of the third data transmission pin 27 of storage card and the Clock Signal pin 21 of storage card, Size does not limit.Also, the control signal pins 23 of storage card and shape, the size of the earth signal pin 24 of storage card are not done It limits.

First number of the second data transmission pin 26 of storage card, the 4th data transmission pin 28 of storage card, storage card According to transmission pin 25 and storage card 22 or more four regions of the pin on the card body of storage card of power pins, relative to Data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in Nano-SIM cards is in Nano-SIM cards Card body on region be corresponding.Draw it is found that the region of the data transmission pin 34 of Nano-SIM cards is split as two Foot, and then obtained the 4th data transmission pin 28 of storage card and the second data transmission pin 26 of storage card, wherein storage Shape, the size of 4th data transmission pin 28 of card and the second data transmission pin 26 of storage card do not limit.Also, it deposits Shape, the size of the first data transmission pin 25 of card storage and the power pins 22 of storage card do not limit.

Figure 17 is the structural schematic diagram of another storage card provided by the embodiments of the present application, and embodiment shown in Fig. 1 carries On the basis of the storage card of confession, as shown in figure 17, storage card includes four data transmission pins, four data transmission pin difference For first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission pin 28。

Region of the first data transmission pin 25 of storage card on the card body of storage card, the programming electricity with Nano-SIM cards Pressure/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the second data transmission pin of storage card 26 is adjacent with first data transmission pin 25.

Figure 18 is the structural schematic diagram of in addition another storage card provided by the embodiments of the present application, embodiment shown in Fig. 1 On the basis of the storage card of offer, as shown in figure 18, storage card includes four data transmission pins, four data transmission pins point Not Wei first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission draw Foot 28.

Region of the control signal pins 23 of storage card on the card body of storage card, draws with the reset signal of Nano-SIM cards Region of the foot 32 on the card body of Nano-SIM cards is corresponding, and the Clock Signal pin 21 of storage card and the control of storage card are believed Number pin 23 is adjacent.

Figure 19 is the structural schematic diagram of in addition another storage card provided by the embodiments of the present application, embodiment shown in Fig. 1 On the basis of the storage card of offer, as shown in figure 19, storage card includes four data transmission pins, four data transmission pins point Not Wei first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission draw Foot 28.

The first data transmission pin 25 of storage card and the third data transmission pin 27 of storage card it is adjacent and isolation setting, The region of first data transmission pin 25 and third data transmission pin 27 on the card body of storage card, with answering for Nano-SIM cards Position region of the signal pins 32 on the card body of Nano-SIM cards is corresponding, and the third data transmission pin 27 of storage card with deposit The Clock Signal pin 21 of card storage is adjacent.

The control signal pins 23 of storage card and the 28 adjacent and isolation setting of the 4th data transmission pin of storage card, storage Region of the control signal pins 23 and the 4th data transmission pin 28 of card on the card body of storage card, the volume with Nano-SIM cards Journey voltage/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the 4th data transmission of storage card Pin 28 is adjacent with the second data transmission pin 26 of storage card.

In the present embodiment, specifically, according to the layout of the above pin it is found that the Clock Signal pin 21 of storage card, depositing The power pins 22 or more four of the third data transmission pin 27 of card storage, the first data transmission pin 25 of storage card and storage card Region of a pin on the card body of storage card, relative to Clock Signal pin 31, the reset signal pin in Nano-SIM cards 32 and region of the power pins 33 on the card body of Nano-SIM cards be corresponding.It is found that by the reset of Nano-SIM cards The region of signal pins 32 is split as two pins, and then has obtained the first data transmission pin 25 and storage card of storage card Third data transmission pin 27, wherein the first data transmission pin 25 of storage card and the third data transmission pin of storage card 27 shape, size do not limit.Also, the Clock Signal pin 21 of storage card, the shape of the power pins 22 of storage card, ruler It is very little not limit.

The control letter of second data transmission pin 26 of storage card, the 4th data transmission pin 28 of storage card, storage card 24 or more four regions of the pin on the card body of storage card of earth signal pin of number pin 23 and storage card, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the program voltage of Nano-SIM cards/input signal pin 35 is split as two A pin, and then obtained the control signal pins 23 of storage card and the 4th data transmission pin 28 of storage card, wherein storage The control signal pins 23 of card and shape, the size of the 4th data transmission pin 28 of storage card do not limit.Also, storage card The second data transmission pin 26, storage card shape, the size of earth signal pin 24 do not limit.

Figure 20 is in addition also a kind of structural schematic diagram of storage card provided by the embodiments of the present application, embodiment shown in Fig. 1 On the basis of the storage card of offer, as shown in figure 20, storage card includes four data transmission pins, four data transmission pins point Not Wei first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission draw Foot 28.

The first data transmission pin 25 of storage card and the third data transmission pin 27 of storage card it is adjacent and isolation setting, The region of first data transmission pin 25 and third data transmission pin 27 on the card body of storage card, with answering for Nano-SIM cards Position region of the signal pins 32 on the card body of Nano-SIM cards is corresponding, and the third data transmission pin 27 of storage card with deposit Second data transmission pin 26 of card storage is adjacent.

The control signal pins 23 of storage card and the 28 adjacent and isolation setting of the 4th data transmission pin of storage card, storage Region of the control signal pins 23 and the 4th data transmission pin 28 of card on the card body of storage card, the volume with Nano-SIM cards Journey voltage/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the 4th data transmission of storage card Pin 28 is adjacent with the Clock Signal pin 21 of storage card.

In the present embodiment, specifically, according to the layout of the above pin it is found that the second data transmission pin of storage card 26, the third data transmission pin 27 of storage card, the first data transmission pin 25 of storage card and the earth signal pin of storage card 24 or more four regions of the pin on the card body of storage card, relative to the Clock Signal pin 31 in Nano-SIM cards, reset The region of signal pins 32 and power pins 33 on the card body of Nano-SIM cards is corresponding.It is found that by Nano-SIM The region of the reset signal pin 32 of card is split as two pins, and then has obtained 25 He of first data transmission pin of storage card The third data transmission pin 27 of storage card, wherein the first data transmission pin 25 of storage card and the third data of storage card Shape, the size of transmission pin 27 do not limit.Also, the second data transmission pin 26 of storage card, the earth signal of storage card Shape, the size of pin 24 do not limit.

The control signal pins of the Clock Signal pin 21 of storage card, 28 storage card of the 4th data transmission pin of storage card 23 and storage card 22 or more four regions of the pin on the card body of storage card of power pins, relative in Nano-SIM cards Data transmission pin 34, program voltage/region of input signal pin 35, earth signal pin 36 on the card body of Nano-SIM cards It is corresponding.It is found that the region of the program voltage of Nano-SIM cards/input signal pin 35 is split as two pins, into And the control signal pins 23 of storage card and the 4th data transmission pin 28 of storage card are obtained, wherein the control of storage card Shape, the size of 4th data transmission pin 28 of signal pins 23 and storage card do not limit.Also, the clock of storage card is believed Shape, the size of the power pins 22 of number pin 21, storage card do not limit.

In addition Figure 21 has a kind of structural schematic diagram of storage card, embodiment shown in Fig. 1 to be provided by the embodiments of the present application On the basis of the storage card of offer, as shown in figure 21, storage card includes four data transmission pins, four data transmission pins point Not Wei first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission draw Foot 28.

Region of the earth signal pin 24 of storage card on the card body of storage card, exists with the power pins 33 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, the earth signal pin of the third data transmission pin 27 and storage card of storage card 24 is adjacent.

Region of the Clock Signal pin 21 of storage card on the card body of storage card, draws with the data transmission of Nano-SIM cards Region of the foot 34 on the card body of Nano-SIM cards is corresponding；

Region of the power pins 22 of storage card on the card body of storage card, exists with the earth signal pin 36 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, and the control signal pins 23 of storage card connect with the power pins 22 of storage card It connects.

The Clock Signal pin 21 of storage card, the 4th data transmission pin 28 of storage card, storage card control signal draw 22 or more four regions of the pin on the card body of storage card of power pins of foot 23 and storage card, relative in Nano-SIM cards Data transmission pin 34, the program voltage/area of input signal pin 35, earth signal pin 36 on the card body of Nano-SIM cards Domain is corresponding.It is found that the region of the program voltage of Nano-SIM cards/input signal pin 35 is split as two pins, And then the control signal pins 23 of storage card and the 4th data transmission pin 28 of storage card are obtained, wherein the control of storage card Shape, the size of 4th data transmission pin 28 of signal pins 23 processed and storage card do not limit.Also, the clock of storage card Signal pins 21, the shape of the power pins of storage card 22, size do not limit.

Figure 22 is provided by the embodiments of the present application other and has a kind of structural schematic diagram of storage card, implementation shown in Fig. 1 On the basis of the storage card that example provides, as shown in figure 22, storage card includes four data transmission pins, four data transmission pins Respectively first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission Pin 28.

Region of the earth signal pin 24 of storage card on the card body of storage card, exists with the power pins 33 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, the first data transmission pin 25 of storage card and the earth signal pin of storage card 24 is adjacent.

The control signal pins 23 of storage card and the 28 adjacent and isolation setting of the 4th data transmission pin of storage card, storage Region of the control signal pins 23 and the 4th data transmission pin 28 of card on the card body of storage card, the volume with Nano-SIM cards Journey voltage/region of the input signal pin 35 on the card body of Nano-SIM cards is corresponding, and the control signal pins of storage card 23 is adjacent with the Clock Signal pin 21 of storage card；

Region of the power pins 22 of storage card on the card body of storage card, exists with the earth signal pin 36 of Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding, the power pins 22 of the 4th data transmission pin 28 and storage card of storage card It is adjacent.

In addition Figure 23 has a kind of structural schematic diagram of storage card, implementation shown in Fig. 1 again to be provided by the embodiments of the present application On the basis of the storage card that example provides, as shown in figure 23, storage card includes four data transmission pins, four data transmission pins Respectively first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission Pin 28.

Region of the power pins 22 of storage card on the card body of storage card, the Clock Signal pin 31 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding.

Region of the Clock Signal pin 21 of storage card on the card body of storage card, the power pins 33 with Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card is located at the power pins 22 and the second data transmission pin 26 of storage card Between, and setting is isolated with the power pins of storage card 22, the second data transmission pin 26 respectively in third data transmission pin 27, The central point of third data transmission pin 27 is located at the central point and the second data transmission pin 26 of the power pins 22 of storage card Central point connecting line on.

4th data transmission pin 28 of storage card is located at the earth signal of the Clock Signal pin 21 and storage card of storage card Between pin 24, and earth signal of the 4th data transmission pin 28 respectively with the Clock Signal pin of storage card 21, storage card draws The isolation setting of foot 24, the central point of the 4th data transmission pin 28 are located at the central point of the Clock Signal pin 21 of storage card and deposit On the connecting line of the central point of the earth signal pin 24 of card storage.

In the present embodiment, specifically, according to the layout of the above pin it is found that the power pins 22 of storage card, storage card Region on the card body of storage card of first data transmission pin 25 and three above pin, relative in Nano-SIM cards The region of Clock Signal pin 31, reset signal pin 32 and power pins 33 on the card body of Nano-SIM cards is corresponding 's.

The third data transmission pin 27 of storage card is arranged in the power pins 22 and storage card for being located at storage card Between second data transmission pin 26, it is preferred that the central point of the third data transmission pin 27 of storage card is located at storage card On the connecting line of the central point of the central point of power pins 22 and the second data transmission pin 26 of storage card.The 4th of storage card Data transmission pin 28 is arranged between the Clock Signal pin 21 of storage card and the earth signal pin 24 of storage card, preferably , the central point of the 4th data transmission pin 28 of storage card is located at central point and the storage of the Clock Signal pin 21 of storage card On the connecting line of the central point of the earth signal pin 24 of card.

In addition Figure 24 also has a kind of structural schematic diagram of storage card, implementation shown in Fig. 1 to be provided by the embodiments of the present application On the basis of the storage card that example provides, as shown in figure 24, storage card includes four data transmission pins, four data transmission pins Respectively first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data transmission Pin 28.

Region of the earth signal pin 24 of storage card on the card body of storage card, the data transmission pin with Nano-SIM cards 34 region on the card body of Nano-SIM cards is corresponding.

Region of the second data transmission pin 26 of storage card on the card body of storage card, the earth signal with Nano-SIM cards Region of the pin 36 on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card is located at the earth signal of the Clock Signal pin 21 and storage card of storage card Between pin 24, and earth signal of the third data transmission pin 27 respectively with the Clock Signal pin of storage card 21, storage card draws The isolation setting of foot 24, the central point of third data transmission pin 27 are located at the central point of the Clock Signal pin 21 of storage card and deposit On the connecting line of the central point of the earth signal pin 24 of card storage.

4th data transmission pin 28 of storage card is located at the power pins 22 and the second data transmission pin 26 of storage card Between, and setting is isolated with the power pins of storage card 22, the second data transmission pin 26 respectively in the 4th data transmission pin 28, The central point of 4th data transmission pin 28 is located at the central point and the second data transmission pin 26 of the power pins 22 of storage card Central point connecting line on.

Second data transmission pin of the earth signal pin 24 of storage card, the control signal pins 23 of storage card and storage card Region of the 26 three above pins on the card body of storage card, relative to the data transmission pin 34 in Nano-SIM cards, programming Voltage/the region of input signal pin 35, earth signal pin 36 on the card body of Nano-SIM cards is corresponding.

The third data transmission pin 27 of storage card is arranged in the Clock Signal pin 21 and storage for being located at storage card Between the earth signal pin 24 of card, it is preferred that the central point of the third data transmission pin 27 of storage card be located at storage card when On the connecting line of the central point of the central point of clock signal pins 21 and the earth signal pin 24 of storage card.4th data of storage card Transmission pin 28 is arranged between the power pins 22 of storage card and the second data transmission pin 26 of storage card, it is preferred that The central point of 4th data transmission pin 28 of storage card be located at the power pins 22 of storage card central point and storage card On the connecting line of the central point of two data transmission pins 26.

Figure 25, which is other other provided by the embodiments of the present application, a kind of structural schematic diagram of storage card, reality shown in Fig. 1 On the basis of the storage card for applying example offer, as shown in figure 25, storage card includes four data transmission pins, and four data transmissions are drawn Foot is respectively that first data transmission pin 25, the second data transmission pin 26, third data transmission pin 27 and the 4th data pass Defeated pin 28.

Region of the power pins 22 of third data transmission pin 27 and storage card on the card body of storage card, with Nano- Region of the power pins 33 of SIM card on the card body of Nano-SIM cards is corresponding, and the power pins 22 of storage card are occupied and deposited The subregion of the third data transmission pin 27 of card storage, the power pins 22 of storage card are drawn with the third data transmission of storage card The isolation setting of foot 27, the power pins 22 of storage card are adjacent with the first data transmission pin 25 of storage card.

Region of the earth signal pin 24 of 4th data transmission pin 28 and storage card on the card body of storage card, with Region of the earth signal pin 36 of Nano-SIM cards on the card body of Nano-SIM cards is corresponding, and the earth signal pin of storage card 24 occupy the subregion of the 4th data transmission pin 28 of storage card, the earth signal pin 24 of storage card and the 4th of storage card the The isolation setting of data transmission pin 28, the earth signal pin 24 of storage card are adjacent with the control signal pins 23 of storage card.

In the present embodiment, specifically, in turn, the Clock Signal pin 21 of storage card, the first data transmission of storage card Card of 27 or more four pins of third data transmission pin of pin 25, the power pins 22 of storage card and storage card in storage card Region on body exists relative to Clock Signal pin 31, reset signal pin 32 and the power pins 33 in Nano-SIM cards Region on the card body of Nano-SIM cards is corresponding.It is found that the region of the power pins 33 on Nano-SIM cards is split For two pins, and then the third data transmission pin 27 of storage card and the power pins 22 of storage card are obtained, and made The power pins 22 of storage card occupy the subregion of the third data transmission pin 27 of storage card, deposit as can see from Figure 25 The power pins 22 of card storage occupy one jiao of the third data transmission pin 27 of storage card.Wherein, the third data of storage card Shape, the size of the power pins 22 of transmission pin 27 and storage card do not limit；Also, the Clock Signal pin of storage card 21, shape, the size of the first data transmission pin 25 of storage card do not limit.

The earth signal pin of second data transmission pin 26 of storage card, the control signal pins 23 of storage card, storage card 24 and storage card 28 or more four regions of the pin on the card body of storage card of the 4th data transmission pin, relative to Nano- The card of data transmission pin 34, program voltage/input signal pin 35, earth signal pin 36 in SIM card in Nano-SIM cards Region on body is corresponding.It is found that the region of the earth signal pin 36 on Nano-SIM cards is split as two pins, into And the 4th data transmission pin 28 of storage card and the earth signal pin 24 of storage card have been obtained, and make the ground letter of storage card Number pin 24 occupies the subregion of the 4th data transmission pin 28 of storage card, as can see from Figure 25 the ground letter of storage card Number pin 24 occupies one jiao of the 4th data transmission pin 28 of storage card.Wherein, the 4th data transmission pin of storage card 28 and shape, the size of earth signal pin 24 of storage card do not limit；Also, the second data transmission pin 26 of storage card, Shape, the size of the control signal pins 23 of storage card do not limit.

The application further provides for a kind of terminal including said memory card.Usually with various products (for example, terminal) Together using the storage card go storage digital data.Regularly, the storage card can be removed from the terminal, so that should The digital data that storage card is stored is portable.According to the storage card of the application can have a relatively small shape because Son, and can be used for for terminal storage digital data, the terminal such as camera, hand-held or laptop, network application device, machine Top box, hand-held or other small audio players/loggers and medical monitor.

Figure 26 is that a kind of circuit diagram of terminal provided by the embodiments of the present application as shown in figure 26 can be by said memory card It is inserted into the Nano-SIM decks of terminal, is provided in Nano-SIM decks corresponding with the Clock Signal pin 21 of storage card First tie point 41, the second tie point 42 corresponding with the power pins 22 of storage card, the control signal pins 23 with storage card Corresponding second tie point 43, the second tie point 44 corresponding with the earth signal pin 24 of storage card, the first number with storage card According to transmission 25 corresponding second tie point 45 of pin, the second tie point corresponding with the second data transmission pin 26 of storage card 46, the second tie point 47 corresponding with the third data transmission pin 27 of storage card, the 4th data transmission pin with storage card 28 corresponding second tie points 48；After storage card is inserted into Nano-SIM decks, each pin of storage card respectively with respectively Self-corresponding connection point contact.The first pin 51 connect with the first tie point 41 and the are provided on the control chip of terminal The second pin 52 of two tie points 42 connection, the third pin 53 being connect with the second tie point 43 are connect with the second tie point 44 The 4th pin 54, connect with the second tie point 45 the 5th pin 55, connect with the second tie point 46 the 6th pin 56, with 7th pin 57 of the second tie point 47 connection, the 8th pin 58 being connect with the second tie point 48.Wherein, second pin 52 can With the power pins of chip in order to control, the 4th pin 54 can chip in order to control earth signal pin.

Also, it is provided with SD interface and SIM interface in the terminal.In SD interface be provided with six pins, respectively first SD pins, the 2nd SD pins, the 3rd SD pins, the 4th SD pins, the 5th SD pins and the 6th SD pins；It is set on SIM interface Three pins, respectively the first SIM pins, the 2nd SIM pins and the 3rd SIM pins are set.

Three switches 61 are provided in controlling chip, and one end of each switch 61 in three switches 61 is drawn with first Foot 51, third pin 53, the 5th pin 55, the 6th pin 56, the 7th pin 57, arbitrary three pins in the 8th pin 58 It is connected correspondingly；By the first pin 51, third pin 53, the 5th pin 55, the 6th pin 56, the 7th pin 57, In 8th pin 58 one is carried out with three pins in SD interface respectively without other three pins for being connect with switch 61 One corresponding connection.

By in SD interface without remaining three pins being connect with the pin of control chip, it is another with three switches 61 One end is corresponded；By three pins on SIM interface, corresponded with the other end of three switches 61.

Chip is controlled according to the detection for storage card, on the other end and SD interface of three switches 61 of control without with Remaining three pins of the pin connection of control chip connect one to one respectively, and then storage card currently realizes storage work( Energy；Alternatively, control chip, according to the detection for storage card, three are drawn on the other end and SIM interface of three switches 61 of control Foot connects one to one respectively, and then storage card is changed into SIM card and goes to realize communication function.

Preferably, a short distance wireless communication technology (near field communication, NFC) structure is provided The output end of 71, NFC structures 71 is corresponding with one end of other switches, also, the one of the 7th pin 57 and other switches End corresponds to；The other end of other switches is connect with the second tie point 47.To NFC structures 71 output end with one other open One end of pass connects, alternatively, one end of other switches of the 7th pin 57 and this is connect.

In the above-described embodiments, storage card and terminal are specifically discussed.The implementation for being suitable for storage card explained above Example plays the target of demonstration and is not intended to limit the application.Techniques disclosed in this application can also be by memory card applications to connection It controls or operates to computing device and by the computing device.In addition to terminal, the example packet for the application that can implement on a memory card Include wireless communication device, global positioning system (global positioning system, GPS) device, cellular devices, network Interface, modem, disk storage system etc..

The multiple features and a little that could be aware that the application from written description, therefore, intentionally with appended right It is required that cover all these feature and advantage of the application.In addition, due to for the art professional person, it is easy to A variety of adjustment and change are carried out, so the application is not limited to have illustrated and description precision architecture and operation.Therefore, All adoptable suitable adjustment and change belong within scope of the present application.

Claims

1. a kind of storage card, including：Storage unit, control unit and memory card interface, the storage unit and the control are single Member is arranged in the card body of the storage card；The memory card interface is arranged on the card body of the storage card；The control is single Member is electrically connected with the storage unit, the memory card interface respectively, which is characterized in that the shape and Nano- of the storage card The shape of user identity identification SIM card is identical, and the size of the storage card is identical as the size of Nano-SIM cards；

The memory card interface include at least the first hard contact of the storage card, the storage card the second hard contact, The fifth metal of the third hard contact of the storage card, the 4th hard contact of the storage card and the storage card is touched Point；Wherein, the first hard contact of the storage card is used for transmission power supply signal, and the second hard contact of the storage card is used for The third hard contact of transmission data, the storage card is used for transmission control signal, and the 4th hard contact of the storage card is used In transmission clock signal, the fifth metal contact of the storage card is used for transmission earth signal.

2. storage card according to claim 1, which is characterized in that the first hard contact of the storage card, the storage It second hard contact of card, the third hard contact of the storage card, the 4th hard contact of the storage card and described deposits The fifth metal contact of card storage is all located on the same side of the card body of the storage card.

3. storage card according to claim 1 or 2, which is characterized in that be provided on the card body of Nano-SIM cards described The third gold of first hard contact of Nano-SIM cards, the second hard contact of the Nano-SIM cards, the Nano-SIM cards Belong to contact, the 4th hard contact of the Nano-SIM cards, the fifth metal contact of the Nano-SIM cards, the Nano-SIM 6th hard contact of card；

The memory card interface further include the 6th hard contact of the storage card, the storage card the 7th hard contact, with And the 8th hard contact of the storage card, wherein the 6th hard contact of the storage card is used for transmission data, the storage 7th hard contact of card is used for transmission data, and the 8th hard contact of the storage card is used for transmission data；

Region of 4th hard contact of the storage card on the card body of the storage card, first with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

Region of second hard contact of the storage card on the card body of the storage card, second with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

7th hard contact of the storage card and the first hard contact of the storage card it is adjacent and isolation setting, the storage 7th hard contact of card and region of first hard contact on the card body of the storage card of the storage card, and it is described Region of the third hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card Seven hard contacts are adjacent with the second hard contact of the storage card；

Region of 6th hard contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 4th Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

Region of the third hard contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 5th Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

8th hard contact of the storage card and the fifth metal contact of the storage card it is adjacent and isolation setting, the storage 8th hard contact of card and region of the fifth metal contact on the card body of the storage card of the storage card, and it is described Region of 6th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card Eight hard contacts are adjacent with the third hard contact of the storage card.

4. storage card according to claim 1 or 2, which is characterized in that be provided on the card body of Nano-SIM cards described The third gold of first hard contact of Nano-SIM cards, the second hard contact of the Nano-SIM cards, the Nano-SIM cards Belong to contact, the 4th hard contact of the Nano-SIM cards, the fifth metal contact of the Nano-SIM cards, the Nano-SIM 6th hard contact of card；

7th hard contact of the storage card and the 4th hard contact of the storage card it is adjacent and isolation setting, the storage 7th hard contact of card and region of the 4th hard contact on the card body of the storage card of the storage card, and it is described Region of first hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding；

Region of second hard contact of the storage card on the card body of the storage card, second with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding, and the 4th hard contact of the storage card with it is described Second hard contact of storage card is adjacent；

Region of first hard contact of the storage card on the card body of the storage card, the third with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

8th hard contact of the storage card and the 6th hard contact of the storage card it is adjacent and isolation setting, the storage 8th hard contact of card and region of the 6th hard contact on the card body of the storage card of the storage card, and it is described Region of 4th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding；

Region of the third hard contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 5th Region of the hard contact on the card body of the Nano-SIM cards is corresponding, and the 6th hard contact of the storage card with it is described The third hard contact of storage card is adjacent；

Region of the fifth metal contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 6th Region of the hard contact on the card body of the Nano-SIM cards is corresponding.

5. storage card according to claim 1 or 2, which is characterized in that be provided on the card body of Nano-SIM cards described The third gold of first hard contact of Nano-SIM cards, the second hard contact of the Nano-SIM cards, the Nano-SIM cards Belong to contact, the 4th hard contact of the Nano-SIM cards, the fifth metal contact of the Nano-SIM cards, the Nano-SIM 6th hard contact of card；

Second hard contact of the storage card and the 7th hard contact of the storage card it is adjacent and isolation setting, the storage Second hard contact of card and region of the 7th hard contact on the card body of the storage card of the storage card, and it is described Region of second hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card Two hard contacts are adjacent with the 4th hard contact of the storage card；

Region of first hard contact of the storage card on the card body of the storage card, the third with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding, and the 7th hard contact of the storage card with it is described First hard contact of storage card is adjacent；

The third hard contact of the storage card and the 8th hard contact of the storage card it is adjacent and isolation setting, the storage The region of the third hard contact of card and the 8th hard contact of the storage card on the card body of the storage card, and it is described Region of the fifth metal contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card Three hard contacts are adjacent with the 6th hard contact of the storage card；

Region of the fifth metal contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 6th Region of the hard contact on the card body of the Nano-SIM cards is corresponding, and the 8th hard contact of the storage card with it is described The fifth metal contact of storage card is adjacent.

6. storage card according to claim 1 or 2, which is characterized in that be provided on the card body of Nano-SIM cards described The third gold of first hard contact of Nano-SIM cards, the second hard contact of the Nano-SIM cards, the Nano-SIM cards Belong to contact, the 4th hard contact of the Nano-SIM cards, the fifth metal contact of the Nano-SIM cards, the Nano-SIM 6th hard contact of card；

7th hard contact of the storage card and the first hard contact of the storage card it is adjacent and isolation setting, the storage 7th hard contact of card and region of first hard contact on the card body of the storage card of the storage card, and it is described Region of the third hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card One hard contact is adjacent with the second hard contact of the storage card；The area of first hard contact of the storage card is more than institute State the area of the 7th hard contact of storage card；

8th hard contact of the storage card and the fifth metal contact of the storage card it is adjacent and isolation setting, the storage 8th hard contact of card and region of the fifth metal contact on the card body of the storage card of the storage card, and it is described Region of 6th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card Five hard contacts are adjacent with the third hard contact of the storage card；The area of the fifth metal contact of the storage card is more than institute State the area of the 8th hard contact of storage card.

7. storage card according to claim 1 or 2, which is characterized in that be provided on the card body of Nano-SIM cards described The third gold of first hard contact of Nano-SIM cards, the second hard contact of the Nano-SIM cards, the Nano-SIM cards Belong to contact, the 4th hard contact of the Nano-SIM cards, the fifth metal contact of the Nano-SIM cards, the Nano-SIM 6th hard contact of card；

Region of the fifth metal contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 6th Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

7th hard contact of the storage card is located at the 6th gold medal of the 4th hard contact and the storage card of the storage card Belong to contact between, and the 7th hard contact of the storage card respectively with the 4th hard contact of the storage card, the storage The 6th hard contact isolation setting of card, the central point of the 7th hard contact of the storage card are located at the 4th of the storage card the On the connecting line of the central point of 6th hard contact of the central point of hard contact and the storage card；

8th hard contact of the storage card is located at the hardware of the first hard contact and the storage card of the storage card Belong to contact between, and the 8th hard contact of the storage card respectively with the first hard contact of the storage card, the storage The fifth metal contact isolation setting of card, the central point of the 8th hard contact of the storage card are located at the first of the storage card On the connecting line of the central point of the fifth metal contact of the central point of hard contact and the storage card.

8. storage card according to claim 1 or 2, which is characterized in that be provided on the card body of Nano-SIM cards described The third gold of first hard contact of Nano-SIM cards, the second hard contact of the Nano-SIM cards, the Nano-SIM cards Belong to contact, the 4th hard contact of the Nano-SIM cards, the fifth metal contact of the Nano-SIM cards, the Nano-SIM 6th hard contact of card；

Region of 6th hard contact of the storage card on the card body of the storage card, first with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

Region of the third hard contact of the storage card on the card body of the storage card, second with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

7th hard contact of the storage card and the first hard contact of the storage card it is adjacent and isolation setting, the storage 7th hard contact of card and region of first hard contact on the card body of the storage card of the storage card, and it is described Region of the third hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card Seven hard contacts are adjacent with the third hard contact of the storage card；

Region of 4th hard contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 4th Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

Region of second hard contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 5th Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

8th hard contact of the storage card and the fifth metal contact of the storage card it is adjacent and isolation setting, the storage 8th hard contact of card and region of the fifth metal contact on the card body of the storage card of the storage card, and it is described Region of 6th hard contact of Nano-SIM cards on the card body of the Nano-SIM cards is corresponding, and the of the storage card Eight hard contacts are adjacent with the second hard contact of the storage card.

9. storage card according to claim 1 or 2, which is characterized in that be provided on the card body of Nano-SIM cards described The third gold of first hard contact of Nano-SIM cards, the second hard contact of the Nano-SIM cards, the Nano-SIM cards Belong to contact, the 4th hard contact of the Nano-SIM cards, the fifth metal contact of the Nano-SIM cards, the Nano-SIM 6th hard contact of card；

Region of the third hard contact of the storage card on the card body of the storage card, second with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding, and the clock signal of the storage card and the storage The third hard contact of card is adjacent；

Region of the fifth metal contact of the storage card on the card body of the storage card, the third with the Nano-SIM cards Region of the hard contact on the card body of the Nano-SIM cards is corresponding；

Region of second hard contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 5th Region of the hard contact on the card body of the Nano-SIM cards is corresponding, and the 6th hard contact of the storage card with it is described Second hard contact of storage card is adjacent；

Region of first hard contact of the storage card on the card body of the storage card, the with the Nano-SIM cards the 6th Region of the hard contact on the card body of the Nano-SIM cards is corresponding.

10. a kind of terminal, which is characterized in that be arranged just like claim 1-9 any one of them storage cards in the terminal.