CN207781567U - A kind of wafer susceptor - Google Patents
A kind of wafer susceptor Download PDFInfo
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- CN207781567U CN207781567U CN201820097230.8U CN201820097230U CN207781567U CN 207781567 U CN207781567 U CN 207781567U CN 201820097230 U CN201820097230 U CN 201820097230U CN 207781567 U CN207781567 U CN 207781567U
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- groove
- wafer
- depth
- notch
- wafer susceptor
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Abstract
This application discloses a kind of wafer susceptor, which includes：Base body；The base body is cuboid；It is arranged on one end face of the base body fluted；The cross-sectional shape of the end face is square, and the bottom surface of the groove is circle, and the rectangular body side surface of the groove and the base body is equipped with notch.The wafer susceptor in the application is made, the breakage rate of wafer susceptor can be reduced.
Description
Technical field
This application involves technical field of semiconductors more particularly to a kind of wafer susceptors.
Background technology
Some techniques in semiconductor devices manufacturing process need for wafer to be embedded into the wafer base for carrying the wafer
In seat.For example, the wafer susceptor for carrying wafer is put into MOCVD (Metal Organic Chemical Vapor
Deposition, Metal Organic Chemical Vapor Deposition) device coating chamber in, a surface of wafer is exposed to
Under one or more different gases, so that chemical reaction or chemical breakdown occur for crystal column surface to generate the film to be deposited.
Wherein, MOCVD is one kind of chemical vapor deposition, easy to control with growth, can grow the very high material of purity, the big face of epitaxial layer
The advantages that product has good uniformity is gradually available for manufacture high brightness LED chip.
In the prior art, when designing wafer susceptor, it first is etched into cylinder shape groove on a surface of substrate, then
Circumscribed rectangle along cylinder shape groove is cut, but this cutting mode is not easy sliver, the wafer for causing cutting to obtain
The breakage rate of pedestal is higher.
Utility model content
The embodiment of the present application provides a kind of wafer susceptor, to solve the higher skill of breakage rate of wafer susceptor in the prior art
Art problem.
In order to solve the above-mentioned technical problem, the embodiment of the present application provides a kind of wafer susceptor, and the wafer susceptor includes：Base
Seat ontology；
The base body is cuboid；
It is arranged on one end face of the base body fluted；The cross-sectional shape of the end face is square, described
The bottom surface of groove is circle, and the rectangular body side surface of the groove and the base body is equipped with notch.
In one embodiment of the application, the quantity of the notch is 4.
In one embodiment of the application, the depth of the notch is greater than or equal to the depth of the groove.
In one embodiment of the application, the depth of the notch is equal to the depth of the groove.
In one embodiment of the application, the width of the notch is 1.5 millimeters~2.5 millimeters.
In one embodiment of the application, the notch is by being the round and circle to the bottom surface on one surface of substrate
Edge is provided with the groove of at least one protrusion, and the circumscribed rectangle cutting of maximum along groove including projection portion is formed, institute
The position for stating notch is corresponding with the position of protrusion.
In one embodiment of the application, the depth of the protrusion is greater than or equal to the depth of the groove.
In one embodiment of the application, the depth of the protrusion is equal to the depth of the groove.
In one embodiment of the application, the quantity of the protrusion is 4.
In one embodiment of the application, the shape of the protrusion is rectangle.
Above-mentioned at least one technical solution that the embodiment of the present application uses can reach following advantageous effect：
Wafer susceptor in the embodiment of the present application includes：Base body；The base body is cuboid；The base body
It is arranged on one end face fluted；The cross-sectional shape of the end face is square, and the bottom surface of the groove is circle, and the groove with
The rectangular body side surface of the base body is equipped with notch.The wafer susceptor in the application is made, the breakage of wafer susceptor can be reduced
Rate ensures the coating effects of wafer.
Description of the drawings
Attached drawing described herein is used for providing further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please do not constitute the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 is a kind of structural schematic diagram of wafer susceptor in the prior art；
Fig. 2 is a kind of structural schematic diagram of wafer susceptor provided by the embodiments of the present application；
Fig. 3 is a kind of schematic diagram of the cross section of groove provided by the embodiments of the present application；
Fig. 4 is a kind of vertical view of reeded substrate of setting provided by the embodiments of the present application；
Fig. 5 is a kind of instance graph of the manufacturing process of wafer susceptor provided by the embodiments of the present application.
Specific implementation mode
In order to make those skilled in the art better understand the technical solutions in the application, below in conjunction with the application reality
The attached drawing in example is applied, technical solutions in the embodiments of the present application is clearly and completely described, it is clear that described implementation
Example is merely a part but not all of the embodiments of the present application.Based on the embodiment in the application, this field is common
The every other embodiment that technical staff is obtained without making creative work should all belong to the application protection
Range.
In order to make it easy to understand, first to the invention relates to some concepts be introduced.
Wafer refers to the silicon wafer used in silicon semiconductor production of integrated circuits, since its shape is circle, therefore referred to as wafer.
Metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD),
For one kind of chemical vapor deposition, in grow up film when, will be anti-for the container by current-carrying gas by Organometallic Reac- tion source
The saturated vapor of Ying Yuan is delivered in reaction chamber to be mixed with other reaction gas, and controls wafer to be grown up by heating device
Then the growth that film is facilitated in chemical reaction occurs on wafer to be grown up for heating temperature.
In general, MOCVD devices include coating chamber, the wafer susceptor for carrying wafer being adapted to coating chamber
And for making reactant gas flow to the pipeline of crystal column surface.When needing to semiconductor crystal wafer plated film, first by the wafer
In embedded wafer susceptor, the wafer susceptor for carrying wafer is put into coating chamber later, wafer is heated to temperature appropriate
Degree, and the gas of organic metal is directed into crystal column surface via pipeline, the plated film on one surface of wafer is carried out whereby.
In the prior art, when making wafer susceptor, it is etched into cylinder shape groove on a surface of substrate first, so
It is cut afterwards along the circumscribed rectangle of cylinder shape groove, obtains wafer susceptor shown in FIG. 1, but this cutting mode is not easy
Sliver causes the breakage rate for cutting obtained wafer susceptor higher, and then influences the coating effects of wafer.In order to solve above-mentioned ask
Topic, the embodiment of the present application provide a kind of wafer susceptor.
The embodiment of the present application provides a kind of wafer susceptor, which includes：Base body；
The base body is cuboid；
It is arranged on one end face of the base body fluted；The cross-sectional shape of the end face is square, the groove
Bottom surface is circle, and the rectangular body side surface of the groove and the base body is equipped with notch.
The wafer susceptor in the application is made, the breakage rate of wafer susceptor can be reduced.
In the embodiment of the present application, the material of base body can be silica.
In the embodiment of the present application, the quantity of notch can be 1,2,3 or 4.
When the quantity of notch is 4, as shown in Fig. 2, Fig. 2 shows the structural schematic diagram of wafer susceptor, base body
An end face on be arranged fluted, the cross-sectional shape of the end face is square, and the bottom surface of groove is circle, and the groove with
The rectangular body side surface of the base body is equipped with notch.
In the embodiment of the present application, the diameter of groove is equal to the length of side of end face, four side phases of the groove and base body
The position cut is both provided with notch, that is, is provided with 4 notches, and the depth of each notch is equal to the depth of groove.
When the quantity of notch is 3,2,1, the position of notch can be such as arbitrary 1,2 or 3 in Fig. 2
A position.In addition, in the embodiment of the present application, the depth of notch can also be more than the depth of groove, for example, by shown in Fig. 2 extremely
The depth of a few notch extends downwardly.The width of notch is less than circular diameter.
In the embodiment of the present application, the width of notch can be 1.5 millimeters~2.5 millimeters.
In an exemplary application scene, for the semiconductor crystal wafer of 200 millimeters of diameter, 0.7 millimeter of thickness, the application carries
The size of the wafer susceptor of confession can be：The thickness of base body is 1.1 millimeters, end surface side is 200 millimeters a length of, is set on the end face
The groove depth for the groove set is 0.7 millimeter, circular a diameter of 200 millimeters of the bottom surface of the groove, the groove and base body
The width of the notch of rectangular body side surface the tangent setting is 2 millimeters, and the depth of the groove is 0.7 millimeter.
In the embodiment of the present application, notch is by being that the round and circular edge is arranged to the bottom surface on one surface of substrate
There is the groove of at least one protrusion, and the circumscribed rectangle cutting of maximum along groove including projection portion is formed, the position of the notch
It sets corresponding with the position of the protrusion.
In order to make it easy to understand, the formation of notch in the wafer susceptor is introduced in the manufacturing process in conjunction with wafer susceptor.
One substrate is provided；It is etched into groove on a surface of substrate, the bottom surface of the groove is round and this is circular
Edge is provided at least one protrusion；The circumscribed rectangle of maximum for not including protrusion along groove is cut, at the position of protrusion
Notch is formed, raised position is corresponding with circumscribed rectangle and the circular position at a point of contact.
For example, the substrate that one piece of width is 370 millimeters, length is 470 millimeters, thickness is 1.1 millimeters can be provided.
In the embodiment of the present application, the material of substrate can be silica.For example, it is 370 millis that can provide one piece of width
The substrate of rice, the silica material that length is 470 millimeters, thickness is 1.1 millimeters.
Etching is the technology by materials'use chemical reaction or physical shock effect and removal, and etching principle is by etching region
The protective film in domain removes, and contacts chemical solution in etching, has the function that dissolved corrosion, it is molding to form concave-convex or hollow out
Effect.
In the embodiment of the present application, the cross section of groove is circle, and the circular edge can be provided with 1 protrusion, 2
Protrusion, 3 protrusions or 4 protrusions, the shape of the protrusion can be rectangle.
When the shape of the protrusion of circular edge setting is rectangle and raised quantity is 4, as shown in figure 3, Fig. 3
Show that the schematic diagram of the cross section of groove, circular edge are provided with 4 protrusions, raised shape is rectangle.When protrusion
When quantity is 3,2,1, the position of protrusion can be such as arbitrary 1,2 or 3 position in Fig. 3.
In addition, in the embodiment of the present application, raised shape may be the other shapes other than rectangle, and raised size can
To be configured according to actual needs.
In the embodiment of the present application, etching mode is varied, specifically, the groove on one surface of substrate passes through in the table
It is etched into cylinder shape groove on face and carries out groove etching in the edge of the cylinder shape groove and is formed；Alternatively, substrate one
Groove on surface carries out wet etching and is formed by the way that hollow out etched plate to be positioned on one surface of the substrate；The etched plate
Hollow out shape be that the round and circular edge is provided at least one protrusion.
In view of on the one hand, raised width is bigger, easier sliver；On the other hand, raised width is bigger, follow-up institute
The width of the notch of the wafer susceptor of formation is also bigger, but notch is too big, may influence the coating effects of wafer, because
This, in the embodiment of the present application, raised width can be 1.5 millimeters~2.5 millimeters, at this point, when being cut to substrate, institute
The width of the notch of obtained wafer susceptor is also 1.5 millimeters~2.5 millimeters, so that while meeting easy sliver,
The integrality for keeping wafer susceptor, avoids impacting the coating effects of wafer.
In the embodiment of the present application, raised depth can be equal to the depth of groove, can also be more than the depth of groove.
In the embodiment of the present application, cutter can be used to not including that the circumscribed rectangle of maximum of projection portion is cut along groove
It cuts, laser can also be used to not including that the circumscribed rectangle of maximum of projection portion is cut along groove.
In the embodiment of the present application, raised position is corresponding with circumscribed rectangle and the circular position at a point of contact, refers to
It is that the position at circumscribed rectangle and a circular point of contact is in protrusion.The notch obtained after cutting, the position sum number of the notch
It measures consistent with the position of protrusion and quantity.
In the embodiment of the present application, since cutting line and circular tangent line can be staggered by protrusion so that be easy in cutting
Sliver, i.e., raised quantity is more, easier sliver, therefore, when raised quantity is 4, i.e., 4 protrusions shown in Fig. 3, Ke Yicong
The breakage rate of wafer susceptor is reduced to the full extent.At this point, when being cut to substrate, 4 notches can be formed, that is, form figure
Wafer susceptor shown in 2.
In addition, also due to cutting line and circular tangent line can be staggered by protrusion so that it is easy sliver in cutting,
I.e. raised depth is bigger, easier sliver, therefore, can be from most when the depth of protrusion is greater than or equal to the depth of groove
The breakage rate of wafer susceptor is reduced in big degree.At this point, when being cut to substrate, depth can be formed and be greater than or equal to groove
Depth notch.
In addition, it is contemplated that on the one hand, raised depth is bigger, easier sliver；On the other hand, raised depth is bigger,
When technique makes, Production Time is long, of high cost, therefore, in the embodiment of the present application, it is preferred that raised depth is equal to groove
Depth, at this point, when being cut to substrate, the depth of the notch of obtained wafer susceptor is also equal to the depth of groove
Degree, so that while meeting easy sliver, keeps the integrality of wafer susceptor, avoids causing shadow to the coating effects of wafer
It rings.
As shown in figure 4, Fig. 4 is the vertical view that reeded substrate is arranged, there are one cross sections for setting on the end face of substrate
For the groove of shape shown in Fig. 3, the shape of the groove is to be provided with 4 protrusions, raised shape on round and circular edge
It is rectangle.In order to make it easy to understand, marked circular 4 tangent lines in phantom in Fig. 4, the circle and its circumscribed rectangle
4 point of contacts, be located in 4 protrusions.
When being cut, substrate can be cut according to 4 dotted lines (tangent line) in Fig. 4, to obtain wafer
Pedestal.
In an exemplary application scene, when the size for the semiconductor crystal wafer for needing plated film is 200 millimeters of diameter, thickness
At 0.7 millimeter, the application can provide the silica that a width is 370 millimeters, length is 470 millimeters, thickness is 1.1 millimeters
The substrate of material, as shown in figure 5, etch two grooves on a surface of substrate, the groove depth of groove is 0.7 millimeter, this is recessed
Circular a diameter of 200 millimeters of the cross section of slot, the depth of the groove is 0.7 millimeter, later along 6 dotted lines shown in fig. 5
(actually circular tangent line) is cut, to obtain two wafer susceptors.Each the size of wafer susceptor is：Base body
The groove depth for the groove that thickness is 1.1 millimeters, end surface side is 200 millimeters a length of, is arranged on the end face is 0.7 millimeter, the cross of the groove
The depth of circular a diameter of 200 millimeters of section, the groove is 0.7 millimeter.
As seen from the above-described embodiment, it in this application embodiment, by the way that protrusion is arranged at the edge of circular groove, will cut
Line is staggered with circular tangent line so that is easy sliver in cutting, so as to reduce the breakage rate of wafer susceptor, ensures wafer
Coating effects.
It will be understood by those skilled in the art that although the preferred embodiment of the application has been described, skill in the art
Art personnel once know basic creative concept, then additional changes and modifications can be made to these embodiments.So appended
Claim, which is intended to be construed to, to be included preferred embodiment and falls into all change and modification of the application range.
Obviously, those skilled in the art can carry out the application model of the various modification and variations without departing from the application
It encloses.In this way, if these modifications and variations of the application belong within the scope of the application claim and its equivalent technologies, then
The application is also intended to include these modifications and variations.
Claims (10)
1. a kind of wafer susceptor, which is characterized in that the wafer susceptor includes：Base body；
The base body is cuboid；
It is arranged on one end face of the base body fluted；The cross-sectional shape of the end face is square, the groove
Bottom surface be circle, and the rectangular body side surface of the groove and the base body is equipped with notch.
2. wafer susceptor as described in claim 1, which is characterized in that the quantity of the notch is 4.
3. wafer susceptor as described in claim 1, which is characterized in that the depth of the notch is greater than or equal to the groove
Depth.
4. wafer susceptor as claimed in claim 3, which is characterized in that the depth of the notch is equal to the depth of the groove.
5. wafer susceptor as described in claim 1, which is characterized in that the width of the notch is 1.5 millimeters~2.5 millimeters.
6. wafer susceptor as described in claim 1, which is characterized in that the notch passes through to the bottom surface on one surface of substrate
It is provided with the groove of at least one protrusion for the round and circular edge, and does not include the maximum circumscribed of projection portion along groove
Rectangle cutting is formed, and the position of the notch is corresponding with the position of protrusion.
7. wafer susceptor as claimed in claim 6, which is characterized in that the depth of the protrusion is greater than or equal to the groove
Depth.
8. wafer susceptor as claimed in claim 7, which is characterized in that the depth of the protrusion is equal to the depth of the groove.
9. wafer susceptor as claimed in claim 6, which is characterized in that the quantity of the protrusion is 4.
10. wafer susceptor as claimed in claim 6, which is characterized in that the shape of the protrusion is rectangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820097230.8U CN207781567U (en) | 2018-01-19 | 2018-01-19 | A kind of wafer susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820097230.8U CN207781567U (en) | 2018-01-19 | 2018-01-19 | A kind of wafer susceptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207781567U true CN207781567U (en) | 2018-08-28 |
Family
ID=63213930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820097230.8U Active CN207781567U (en) | 2018-01-19 | 2018-01-19 | A kind of wafer susceptor |
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| Country | Link |
|---|---|
| CN (1) | CN207781567U (en) |
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2018
- 2018-01-19 CN CN201820097230.8U patent/CN207781567U/en active Active
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Address after: 215300 No. 188 Feng Feng Road, Kunshan hi tech Zone, Jiangsu, Kunshan Patentee after: Suzhou Qingyue Photoelectric Technology Co., Ltd Address before: 215300 No. 188 Feng Feng Road, Kunshan hi tech Zone, Jiangsu, Kunshan Patentee before: Kunshan Visionox Technology Co.,Ltd. |
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