CN205313714U - Improve graphite plate of each ring wavelength mean value of silica -based nitride - Google Patents
Improve graphite plate of each ring wavelength mean value of silica -based nitride Download PDFInfo
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- CN205313714U CN205313714U CN201521133082.3U CN201521133082U CN205313714U CN 205313714 U CN205313714 U CN 205313714U CN 201521133082 U CN201521133082 U CN 201521133082U CN 205313714 U CN205313714 U CN 205313714U
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Abstract
The utility model discloses an improve graphite plate of each ring wavelength mean value of silica -based nitride relates to graphite plate's for the MOCVD technical field. This graphite plate includes the graphite plate disk body and distributes and is used for placing a plurality of circular recess of silicon substrate in the disk body upper surface, include in every recess: cell body, annular epirelief bottom surface, the first side wall, round platform and second lateral wall. The distribution of recess on the disk body divide into interiorly and the outer lane, the high value of round platform of outer lane recess was than the low 2 -30um of inner circle recess when the interior high value in annular epirelief bottom surface with the outer lane recess was the same, perhaps, the high value in annular epirelief bottom surface of outer lane recess was than the high 2 -30um of inner circle recess when the high value of interior round platform with the outer lane recess was the same. The utility model discloses each ring phenomenon that the wavelength mean value differed greatly of silica -based nitride be can effectively reduce among the MOCVD, silicon substrate gaN base epitaxial growth's wavelength homogeneity and yield are improved to the life of some spare parts among the extension MO CVD equipment.
Description
[technical field]
The utility model relates to chemical vapour deposition (ChemicalVaporDeposition, CVD) technical field, the graphite plate of metal organic chemical vapor deposition (Metal-organicChemicalVaporDeposition, hereinafter referred to as MOCVD) it is used in particular to one.
[background technology]
Metal organic chemical vapor deposition is a kind of chemical vapour deposition technique utilizing organo-metallic pyrolysis to carry out vapor phase epitaxial growth film, its adopts the hydride of III, the organic compound of II race element and V race, VI race element etc. as crystal growth source material, on substrate, vapour phase epitaxy is carried out in pyrolysis mode, the thin layer monocrystal material of growth iii-v, II-VI group compound semiconductor materials and their multivariate solid solution, these semiconductor films are mainly used in the field such as photoelectric device and microelectronic device.
Graphite plate is accessory extremely important in MOCVD device, and graphite plate conventional at present is all circular, is distributed with the groove of some circles on graphite plate, and these grooves are namely for placing substrate. Graphite-based dish is made up of high purity graphite, and be coated with SiC coating on surface. Epitaxial process, in the reaction chamber of MOCVD, carries out radiation heating by heat filament to the graphite plate being contained with substrate, and by thermopair and temperature regulator control temperature, such temperature control precision generally can reach 0.2 DEG C or lower.
At present, during epitaxy GaN base epitaxial wafer, the substrate used be divided into 2 inches with 4 inches etc., most company based on 2 inches, at present also toward 4 inches of development. As shown in Figure 1, the distribution of graphite plate further groove is divided into inside and outside two circles to the graphite plate that the 4 inches of epitaxys of current VeecoK465i and C4 type MOCVD machine platform use, and wherein the groove of label 1-10 is called outer ring, and the groove that label is 11-14 is called inner ring. When epitaxy, in these two kinds of types all there is the phenomenon of the inner ring wavelength average ratio short 1-6nm in outer ring in the epitaxial wafer of growth.For this kind of phenomenon, what adopt time most is reduce inner ring temperature to elongate inner ring epitaxial wafer wavelength. But this method can not improve the difference of inside and outside circle wavelength average completely, and some component in MOCVD device can be caused the problems such as shortening in work-ing life.
In MOCVD during epitaxy GaN base epitaxial wafer, the substrate material overwhelming majority used at present is sapphire (Al2O3) substrate, fewer companies use SiC substrate and Si substrate. Due to Si substrate and sapphire (Al2O3) substrate and the lattice mismatch of III-V nitride epitaxial film and the difference of thermal expansivity, all can there is warpage in epitaxial wafer in epitaxial process, but both warping phenomenons have difference. It is uneven that epitaxial wafer generation warpage causes slice, thin piece to be heated, epitaxial layer quality there is impact, and the wavelength of the luminous epitaxial wafer of III-V nitride is comparatively responsive to temperature, easily cause wavelength difference in epitaxial wafer bigger, follow-up chip processing procedure and sorting work can be caused the reduction of significantly increase and the good rate of time and cost, particularly for large size extension, warping phenomenon can be more serious, if current each company is in 4 inches of extensions of active development, the yield loss brought and cost increase also can be more serious.
License number is a kind of for CN203794982U proposes improves the graphite-based dish of inner ring wavelength homogeneity with each circle wavelength average that furthers, and this graphite plate is mainly for 2 inch substrates, and is mainly applicable to sapphire (Al2O3) epitaxial wafer of growth on substrate; And Si substrate grows III-V nitride epitaxial wafer technology also in development, in MOCVD use graphite-based dish with sapphire (Al2O3) substrate use graphite-based dish situation inconsistent, also also very big with the difference in Sapphire Substrate for the extension on silicon substrate.
[practical novel content]
Due to extension III-V nitride semiconductor material technology on existing silicon substrate also grow in development and in existing MOCVD III-V nitride semiconductor material use graphite plate mainly for be Sapphire Substrate, the purpose of this utility model is in the improvement MOCVD provided, and silica-based nitride respectively encloses the graphite plate of wavelength average, improve and improve the wavelength homogeneity of extension III-V nitride epitaxial wafer on silicon substrate, the good rate of machine platform extension, and the work-ing life of some component in MOCVD device can be extended.
The scheme that the utility model technical solution problem provides is:
Improving the graphite plate that silica-based nitride respectively encloses wavelength average and uses, described graphite plate comprises graphite plate dish body 21 and is distributed in dish body 21 upper surface for placing multiple circular grooves of silicon substrate; And what described multiple groove substantially circumferentially distributed on described dish body 21, inner ring and outer ring can be divided into according to its distribution on dish body, and the diameter of described outer ring is greater than the diameter of described inner ring;
Described in each, groove comprises: groove body, bottom surface, the first sidewall and the round platform for placing described silicon substrate, and wherein, described bottom surface is for being positioned at bottom described groove body, and described bottom surface is the annular of upwards arch projection; Described first sidewall deviates from the bending extension of described graphite plate dish body from described bottom edge and become in described groove body is inner; Described round platform outwards bends extension from the top of described first sidewall and become in described groove body is inner;
It is positioned at the low 2-30um of frustum cone height value than inner ring groove of outer ring groove when convex bottom face height value is identical in the described annular with outer ring groove;Or,
Be positioned at described identical with the frustum cone height value of outer ring groove time outer ring groove annular on convex bottom face height value than the high 2-30um of inner ring groove.
Further preferably, when being positioned at that in the described annular with outer ring groove, convex bottom face height value is identical, and convex bottom face height value scope is 5-100um in described annular, the frustum cone height value being positioned at described inner ring further groove than the high 2-30um being positioned at described outer ring further groove, and described in and the frustum cone height value scope of outer ring further groove be 30-130um.
Further preferably, be positioned at described identical with the frustum cone height value of outer ring groove time, and the height value scope of described round platform is 30-130um, be positioned in the annular of described inner ring further groove convex bottom face height value than the high 2-30um being positioned at described outer ring further groove, and described in and outer ring further groove annular on convex bottom face height value scope be 5-100um.
Further preferably, also comprising the 2nd sidewall in described groove, described 2nd sidewall deviates from the bending extension of described graphite plate dish body from described round platform edge and become in described groove body is inner, and the top of described 2nd sidewall connects with described groove surface preglabellar field.
Compared with prior art, the utility model has following technique effect:
1. the utility model is applied in MOCVD on silicon substrate growing GaN base epitaxial wafer, by the adjustment of the project organization in circle groove inside and outside in graphite plate and parameter being solved preferably the difference of the inside and outside circle wavelength average of GaN base epitaxial wafer on silicon substrate in MOCVD, avoid meeting epitaxy by significantly changing the modes such as inner ring set temperature, it is to increase the wavelength homogeneity of epitaxial wafer and good rate.
2. the utility model is by the adjustment of the project organization in graphite plate groove and parameter, do not need significantly to change inner ring set temperature suitable to reach inside and outside circle wavelength average, work-ing life for some component in MOCVD also can extend, save maintenance of the equipment time and cost, thus reduce production cost.
[accompanying drawing explanation]
Fig. 1 is the graphite-based dish structural representation that the utility model has growth 4 inches of epitaxial wafers of 14 grooves.
Fig. 2 is the utility model Ring graphite-based dish groove sectional view that the design of growing GaN base epitaxial wafer uses on a silicon substrate and epitaxial wafer warping phenomenon view.
Description of reference numerals
The dish body 21 graphite plate surface 26 of graphite plate
Convex bottom face 22 silicon substrate 27 in groove annular
First sidewall 23 length L21, L22
Round platform 24 height H 21, H22, H23
2nd sidewall 25
[embodiment]
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Embodiment one:
Being the graphite plate that in the improvement MOCVD machine platform of the utility model offer, 4 inches of inside and outside circle wavelength averages of silica-based nitride use with reference to figure 2, graphite plate comprises the dish body 21 of graphite plate and is distributed in dish body 21 upper surface for laying multiple grooves of 4 inches of silicon substrates. In a particular embodiment, this groove diameter size is to place 2 inches, 4 inches, 6 inches, the 8 inches silicon substrates 27 that even diameter is bigger.
In the present embodiment, multiple groove substantially circumferentially distributes on dish body 21, can be divided into inner ring and outer ring according to its distribution on dish body, and the diameter of outer ring is greater than the diameter of inner ring.
In the present embodiment in and each groove of outer ring comprise: groove body 21, bottom surface 22, first sidewall 23, round platform 24 and the 2nd sidewall 25, wherein, bottom surface 22 for being positioned at bottom groove body, and bottom surface be annular, upwards arch projection;First sidewall 23 deviates from the bending of graphite plate dish body from bottom edge and extends and become; Round platform 24 outwards bends from the top of the first sidewall 23 and extends and become; 2nd sidewall 25 is justified edge of table edge by oneself and is deviated from the bending extension of graphite plate dish body 21 and become, and the top of the 2nd sidewall 25 connects with groove surface 26 preglabellar field.
In the present embodiment, in the annular of inner ring groove and outer ring groove, convex bottom face 22 height value H21 value is 30um, the height value H22 of the round platform 24 of inner ring groove be 60um, outer ring groove round platform 24 height value than the low 3um of inner ring groove.
Embodiment two:
It it is the graphite plate that in the improvement MOCVD machine platform of the utility model offer, 4 inches of inside and outside circle wavelength averages of silica-based nitride use with reference to figure 2, it is characterized in that, graphite plate comprises the dish body 21 of graphite plate and is distributed in dish body 21 upper surface for laying multiple grooves of 4 inches of silicon substrates. In a particular embodiment, this groove diameter size is to place 2 inches, 4 inches, 6 inches, the 8 inches silicon substrates 27 that even diameter is bigger.
In the present embodiment, multiple groove substantially circumferentially distributes on dish body 21, can be divided into inner ring and outer ring according to its distribution on dish body, and the diameter of outer ring is greater than the diameter of inner ring.
In the present embodiment in and each groove of outer ring comprise: groove body 21, bottom surface 22, first sidewall 23, round platform 24 and the 2nd sidewall 25, wherein, bottom surface 22 for being positioned at bottom groove body, and bottom surface be annular, upwards arch projection; First sidewall 23 deviates from the bending of graphite plate dish body from bottom edge and extends and become; Round platform 24 outwards bends from the top of the first sidewall 23 and extends and become; 2nd sidewall 25 is justified edge of table edge by oneself and is deviated from the bending extension of graphite plate dish body 21 and become, and the top of the 2nd sidewall 25 connects with groove surface 26 preglabellar field.
In the present embodiment, the round platform 24 height value H22 value of inner ring groove and outer ring groove is 100um, in the annular of inner ring groove convex bottom face 22 height value H21 be in the annular of 50um, outer ring groove convex bottom face 22 height value 21 than the high 8um of inner ring groove.
Claims (4)
1. one kind is improved the graphite plate that silica-based nitride respectively encloses wavelength average, it is characterized in that, described graphite plate comprises the dish body 21 of graphite plate and is distributed in described dish body 21 upper surface for laying multiple grooves of silicon substrate, and what described multiple groove substantially circumferentially distributed on described dish body 21, inner ring and outer ring can be divided into, and the diameter of described outer ring is greater than the diameter of described inner ring according to its distribution on dish body;
Described in each, groove comprises: groove body, bottom surface, the first sidewall and the round platform for placing described silicon substrate, and wherein, described bottom surface is for being positioned at bottom described groove body, and described bottom surface is the annular of upwards arch projection; Described first sidewall deviates from the bending extension of described graphite plate dish body from described bottom edge and become in described groove body is inner; Described round platform outwards bends extension from the top of described first sidewall and become in described groove body is inner;
Being positioned at described inner ring identical with convex bottom face height value in the annular of outer ring further groove, the height value of round platform being positioned at described inner ring further groove is than the high 2-30um being positioned at described outer ring further groove; Or,
It is positioned at described inner ring identical with the frustum cone height value of outer ring further groove, it is positioned in the annular of described outer ring further groove convex bottom face height value than the high 2-30um of inner ring groove.
2. graphite plate according to claim 1, it is characterised in that,
It is positioned at described inner ring identical with convex bottom face height value in the annular of outer ring further groove, and convex bottom face height value scope is 5-100um in described annular, the frustum cone height value being positioned at described inner ring further groove is than the high 2-30um being positioned at described outer ring further groove, and the frustum cone height value scope of described inner ring and outer ring further groove is 30-130um.
3. graphite plate according to claim 1, it is characterised in that,
It is positioned at described inner ring identical with the frustum cone height value of outer ring further groove, and the height value scope of described round platform is 30-130um, it is positioned in the annular of described inner ring further groove convex bottom face height value than the high 2-30um being positioned at described outer ring further groove, and in the annular of described inner ring and outer ring further groove, convex bottom face height value scope is 5-100um.
4. graphite plate as described in claim 1-3 any one, it is characterised in that,
Also comprising the 2nd sidewall in described groove, described 2nd sidewall deviates from the bending extension of described graphite plate dish body from described round platform edge and become in described groove body is inner, and the top of described 2nd sidewall connects with described groove surface preglabellar field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521133082.3U CN205313714U (en) | 2015-12-30 | 2015-12-30 | Improve graphite plate of each ring wavelength mean value of silica -based nitride |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521133082.3U CN205313714U (en) | 2015-12-30 | 2015-12-30 | Improve graphite plate of each ring wavelength mean value of silica -based nitride |
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| CN205313714U true CN205313714U (en) | 2016-06-15 |
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| CN201521133082.3U Expired - Fee Related CN205313714U (en) | 2015-12-30 | 2015-12-30 | Improve graphite plate of each ring wavelength mean value of silica -based nitride |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568371A (en) * | 2015-12-30 | 2016-05-11 | 晶能光电（常州）有限公司 | Graphite disc for improving mean value of wavelengths of all rings of silicon-based nitride |
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2015
- 2015-12-30 CN CN201521133082.3U patent/CN205313714U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568371A (en) * | 2015-12-30 | 2016-05-11 | 晶能光电（常州）有限公司 | Graphite disc for improving mean value of wavelengths of all rings of silicon-based nitride |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160615 Termination date: 20171230 |