CN207775084U - Etaching device - Google Patents
Etaching device Download PDFInfo
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- CN207775084U CN207775084U CN201721630231.6U CN201721630231U CN207775084U CN 207775084 U CN207775084 U CN 207775084U CN 201721630231 U CN201721630231 U CN 201721630231U CN 207775084 U CN207775084 U CN 207775084U
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- electrode
- etaching device
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- raised structures
- fringe region
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Abstract
This application discloses a kind of Etaching device, for being etched to substrate, including：Reaction chamber；First electrode is located in the reaction chamber；And second electrode, it is located in the reaction chamber, is oppositely arranged in parallel with the first electrode, for carrying the substrate；There are gaps between the second electrode and the substrate, which is characterized in that the second electrode includes：Main-body electrode plate, upper surface is opposite with the substrate, and the upper surface includes cooled region and fringe region；Wall is protected, between the cooled region and the fringe region；The fringe region is formed between protection wall and the edge of the main-body electrode plate；At least one first raised structures are located in the fringe region.
Description
Technical field
The utility model is related to etching technique field more particularly to a kind of Etaching devices.
Background technology
Liquid crystal display (Liquid Crystal Display, LCD) has become the display technology of mainstream in the market.
The essential structure of LCD is：Liquid crystal molecule, the first glass base are placed between parallel the first glass substrate and the second glass substrate
Colored filter is arranged on the surface of liquid crystal molecule for plate face, and film is arranged on the surface towards liquid crystal molecule in the second glass substrate
Transistor (Thin FilmTransistor, TFT), liquid crystal molecule can be controlled by providing different voltage signals to TFT
Rotation direction, to control the deflection of light corresponding with each pixel, the final display for realizing picture.
In general, in the manufacturing process of liquid crystal display, in order to form interlock circuit on the glass substrate, need to
The glass substrate of plated film is etched.The etching process of existing glass substrate is that glass substrate is placed in top electrode and lower electrode
Between, and be full of between the upper and lower electrodes full of corrosive gas such as chlorine, then between top electrode and lower electrode
Apply voltage, the corrosive gas such as chlorine are excited into corrosivity electronics to be etched to glass substrate.
Fig. 1 shows the lower electrode schematic partial cross-sectional view of the Etaching device of the prior art.
As shown in Figure 1, in the Etaching device of the prior art, the contact surface of the edge protuberance and glass substrate of lower electrode 10
It is designed to smooth plane 11, to support glass substrate.However, in the etching treatment procedure to glass substrate, due to flat
Face 11 and the contact area of glass substrate are very big, between glass substrate and the edge protuberance of lower electrode 10 it is easy to produce static electricity absorption with
The phenomenon that Electro-static Driven Comb, in some instances it may even be possible to glass substrate fragmentation can be made, this can make a big impact to product yield.In the prior art
In, improving the method for this defect is, polishes plane 11, with this come promoted lower electrode 10 edge protuberance it is coarse
Degree reduces the contact area of plane 11 and glass substrate.However, Etaching device is within certain maintenance period, lower electrode 10
The roughness of edge protuberance can decline, and plane 11 and the contact surface of glass substrate can increase therewith, glass substrate and lower electrode 10
Edge protuberance between still absorption easy to produce static electricity and the phenomenon that Electro-static Driven Comb.
Therefore, it is necessary to design a kind of new Etaching device, to solve the electrostatic between glass substrate and Etaching device, fragmentation
The problems such as.
Utility model content
The utility model provides a kind of Etaching device for the above problem in the presence of the prior art, mainly passes through
The marginal texture of lower electrode is designed as male and fomale(M＆F) so that the contact area between the edge and glass substrate of lower electrode reduces,
So as to effectively weaken or eliminate the lower Electrostatic Absorption occurred between electrode and glass substrate and Electro-static Driven Comb phenomenon, into one
Step reduce glass substrate due to electrostatic the probability of fragmentation, improve production yield.
The Etaching device of the utility model includes：Reaction chamber；First electrode is located in the reaction chamber；And the
Two electrodes are located in the reaction chamber, are oppositely arranged in parallel with the first electrode, for carrying the substrate；Described
There are gaps between second electrode and the substrate, which is characterized in that the second electrode includes：Main-body electrode plate, upper table
Face is opposite with the substrate, and the upper surface includes cooled region and fringe region；Protect wall, be located at the cooled region with
Between the fringe region；The fringe region is formed between protection wall and the edge of the main-body electrode plate；At least
One the first raised structures is located in the fringe region.
Preferably, the second electrode further includes multiple through-holes, and each through-hole is through the main-body electrode plate with even
Lead to the upper and lower surface of the main-body electrode plate.
Preferably, the second electrode further includes stretching structure corresponding with the through-hole, and the stretching structure is located at institute
It states in through-hole, for controlling the distance between the substrate and the second electrode.
Preferably, each through-hole is between first raised structures.
Preferably, the stretching structure can be realized with lifter pin.
Preferably, the cooled region is equipped at least one second raised structures, at least one second raised structures
It is contacted with the substrate to form the gap.
Preferably, first raised structures are punctiform object.
Preferably, second raised structures are punctiform object.
Preferably, first raised structures are evenly distributed on the protection wall both sides with second raised structures.
Preferably, the height of the protection wall, first raised structures and second raised structures is in same
Horizontal plane.
The utility model has the beneficial effects that a kind of new Etaching device is proposed, it is flat by the way that lower surrounding them to have
The fringe region in whole planar structure region be designed to surface have concaveconvex structure fringe region, to reduce fringe region with
The contact area of glass substrate is effectively prevented within maintenance period under the fringe region roughness of electrode under Etaching device
Drop, to reduce during glass substrate is processed, because Electrostatic Absorption and the reason of Electro-static Driven Comb cause glass substrate broken
The probability split improves production yield；It is equipped with protection wall in the cooled region of lower electrode and the critical part of concavo-convex marginal portion, it should
Protection wall can effectively stop carries out cooling cooling gas (back cooling, BC) to the glass substrate back side, that is, protects
Cooling gas is limited in cooled region by wall；The Etaching device of the utility model can also be saved before starting etching every time, be beaten
It the time in the lower electrode edge region of mill, does not need roughness measurement and roughness concentration is carried out to lower electrode edge, substantially carry
The working efficiency risen.
Description of the drawings
By the way that the utility model embodiment is described referring to the drawings, above-mentioned and other mesh of the utility model
Feature and advantage will be apparent from.
Fig. 1 shows the lower electrode schematic partial cross-sectional view of the Etaching device of the prior art.
Fig. 2 shows the Etaching device schematic diagrames of the utility model embodiment.
Fig. 3 shows the schematic partial cross-sectional view of the lower electrode in Fig. 2.
Specific implementation mode
Hereinafter reference will be made to the drawings is more fully described the utility model.In various figures, identical element is using similar
Reference numeral indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to certain public affairs
The part known is not shown.
Many specific details of the utility model are described hereinafter, to be more clearly understood that the utility model.
But just as the skilled person will understand, it can not realize that this practicality is new according to these specific details
Type.
Fig. 2 shows the Etaching device schematic diagrames of the utility model embodiment.
Etaching device as shown in Figure 2 is for being etched substrate 100.Etaching device includes：Reaction chamber 1300 powers on
Pole (first electrode) 1100 and lower electrode (second electrode) 1200.
Reaction chamber 1300 is used to form a closed environment, is provided with the admission line entered for etching gas in it
1400 and for the gas that is discharged that treated discharge duct 1500.
Top electrode 1100 is connected with power supply, and lower electrode 1200 is grounded.Top electrode 1100 is parallel with lower electrode 1200 to be set relatively
It is placed in the inside of reaction chamber 1300, substrate 100 is arranged between top electrode 1100 and lower electrode 1200 and is held by lower electrode 1200
It carries, to which the etching gas in reaction chamber 1300 can be powered on the control of the voltage between pole 1100 and lower electrode 1200 so that
Plated film on substrate 100 can be etched to form interlock circuit.
There are gaps between lower electrode 1200 and substrate 100, and after the completion of etching, the gap is for making cooling gas pass through
It crosses to cool down substrate 100.
It, can to treated, substrate 100 be cut according to the size of required panel after the completion of etching.
In some alternative embodiments, etching gas can also enter in reaction chamber 1300 otherwise.For example,
Multiple through-holes can be formed in top electrode 1100 so that etching gas flows to the upper surface of substrate 100 with complete from multiple through-holes
At etching and processing.However the embodiment of the utility model embodiment is without being limited thereto, those skilled in the art can be according to reality
It needs to carry out related setting.
Fig. 3 shows the schematic partial cross-sectional view of lower electrode in Fig. 2.
As shown in figure 3, the lower electrode 1200 of the Etaching device of the utility model embodiment includes main-body electrode plate 1210, the
One bulge-structure 1221, the second bulge-structure 1222 and protection wall 1250.
The upper surface of main-body electrode plate 1210 is opposite with substrate 100, and the upper surface of main-body electrode plate 1210 includes cooling zone
Domain 1211 and fringe region 1212.
First bulge-structure 1221 is formed on the fringe region 1212 of 1210 upper surface of main-body electrode plate, and structure is point
Shape object is used to support the edge of substrate 100 and prevents the electrostatic phenomenon between substrate 100 and the edge of lower electrode 1200.Its
In, the forming method of the first bulge-structure 1221 be by the originally smooth fringe region 1212 in 1210 upper surface of lower electrode body into
Row etching, however the embodiment of the utility model embodiment is without being limited thereto, those skilled in the art can be according to actual needs
Carry out related setting.
Second bulge-structure 1222 is formed on the cooled region 1211 of 1210 upper surface of main-body electrode plate, structure and the
One bulge-structure 1221 is identical, is for punctiform object.Second bulge-structure 1222 is used to support substrate 100 and forms substrate
Gap between 100 and lower electrode 1200, so that cooling gas can cool down substrate 100.
Protection wall 1250 is formed between the cooled region 1211 and fringe region 1212 of 1210 upper surface of main-body electrode plate,
The upper surface of protection wall 1250 is designed as flat surface, is used to support substrate 100 and cooling gas is limited in cooled region,
Keep cooling gas more abundant to the cooling at 100 back side of substrate.Wherein, it is convex to be uniformly dispersed with first for the both sides of protection wall 1250
Play structure 1221 and the second bulge-structure 1222.
In some preferred embodiments, lower electrode 1200 further includes multiple through-holes 1230 and corresponding stretching structure
1240.Each through-hole 1230 extends vertically through main-body electrode plate 1210 to be connected to the upper and lower surface of main-body electrode plate 1210；Flexible knot
Structure 1240 is placed in a corresponding through-hole 1230, is used for the distance between control base board 100 and lower electrode 1200, that is, is being etched
After device completes etching to substrate 100, stretching structure 1240 jacks up substrate 100, consequently facilitating transferring out etch station.It is preferred that
Ground, through-hole 1230 can be distributed between the first bulge-structure 1221, wherein stretching structure 1240 is for example realized with lifter pin.
The through-hole 1230 of the utility model embodiment can be voluntarily arranged according to actual needs with the position of stretching structure 1240.
Based on the upper surface of main-body electrode plate 1210, protect the rising height of wall 1250, the first bulge-structure 1221 it is prominent
The rising height for playing height and the second bulge-structure 1222 is all in the same horizontal plane, to protect wall 1250, first raised
Structure 1221 and the second bulge-structure 1222 being capable of smoothly bearing substrate 100.
The utility model has the beneficial effects that a kind of new Etaching device is proposed, by the way that the lower surrounding them of lower electricity to have
There is the fringe region in smooth planar structure region to be designed to that surface has the fringe region of concaveconvex structure, to reduce marginal zone
The contact area in domain and glass substrate is effectively prevented the fringe region roughness of electrode under Etaching device within maintenance period
Decline, to reduce during glass substrate is processed, because the reason of Electrostatic Absorption and Electro-static Driven Comb leads to glass substrate
The probability of fragmentation improves production yield；In the intersection of lower electrode original pointing object support construction and concavo-convex marginal portion
Equipped with protection wall, which, which can effectively stop, carries out the glass substrate back side cooling cooling gas, that is, protects wall will
Cooling gas is limited in cooled region；The Etaching device of the utility model can also be saved before starting etching every time, under polishing
The time in electrode edge region does not need roughness measurement and carries out roughness concentration to lower electrode edge, greatly improves
Working efficiency.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiments of the present invention, these embodiments there is no all details of detailed descriptionthe,
The specific embodiment that the utility model is only described is not limited yet.Obviously, as described above, many modification and change can be made
Change.These embodiments are chosen and specifically described to this specification, is in order to preferably explain the principles of the present invention and actually to answer
With to enable skilled artisan to utilize the utility model and repairing on the basis of the utility model well
Change use.
Claims (10)
1. a kind of Etaching device, for being etched to substrate, including：
Reaction chamber；
First electrode is located in the reaction chamber；And
Second electrode is located in the reaction chamber, is oppositely arranged in parallel with the first electrode, is used for bearing substrate；It is special
Sign is that the second electrode includes：
Main-body electrode plate, upper surface is opposite with the substrate, and the upper surface includes cooled region and fringe region；
Wall is protected, between the cooled region and the fringe region；
The fringe region is formed between protection wall and the edge of the main-body electrode plate；
At least one first raised structures are located in the fringe region.
2. Etaching device according to claim 1, which is characterized in that the second electrode further includes multiple through-holes, each
The through-hole is through the main-body electrode plate to be connected to the upper and lower surface of the main-body electrode plate.
3. Etaching device according to claim 2, which is characterized in that the second electrode further includes corresponding with the through-hole
Stretching structure, the stretching structure is located in the through-hole, for control between the substrate and the second electrode away from
From.
4. Etaching device according to claim 3, which is characterized in that each through-hole is located at first raised structures
Between.
5. Etaching device according to claim 3, which is characterized in that the stretching structure can be realized with lifter pin.
6. Etaching device according to claim 1, which is characterized in that the cooled region is equipped at least one second protrusion
Structure,
At least one second raised structures are contacted with the substrate to form gap.
7. Etaching device according to claim 6, which is characterized in that first raised structures are punctiform object.
8. Etaching device according to claim 6, which is characterized in that second raised structures are punctiform object.
9. Etaching device according to claim 6, which is characterized in that first raised structures and the second protrusion knot
Structure is evenly distributed on the protection wall both sides.
10. Etaching device according to claim 9, which is characterized in that the protection wall, first raised structures and
The height of second raised structures is in same level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721630231.6U CN207775084U (en) | 2017-11-29 | 2017-11-29 | Etaching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721630231.6U CN207775084U (en) | 2017-11-29 | 2017-11-29 | Etaching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207775084U true CN207775084U (en) | 2018-08-28 |
Family
ID=63234248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721630231.6U Active CN207775084U (en) | 2017-11-29 | 2017-11-29 | Etaching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207775084U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349828A (en) * | 2019-06-20 | 2019-10-18 | 深圳市华星光电技术有限公司 | Dry etching equipment |
-
2017
- 2017-11-29 CN CN201721630231.6U patent/CN207775084U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349828A (en) * | 2019-06-20 | 2019-10-18 | 深圳市华星光电技术有限公司 | Dry etching equipment |
| CN110349828B (en) * | 2019-06-20 | 2021-12-03 | Tcl华星光电技术有限公司 | Dry etching apparatus |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215301, 1, Longteng Road, Kunshan, Jiangsu, Suzhou Patentee after: Kunshan Longteng Au Optronics Co Address before: 215301, 1, Longteng Road, Kunshan, Jiangsu, Suzhou Patentee before: Kunshan Longteng Optronics Co., Ltd. |
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| CP01 | Change in the name or title of a patent holder |