CN207719212U - Back side illumination image sensor - Google Patents
Back side illumination image sensor Download PDFInfo
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- CN207719212U CN207719212U CN201820161716.3U CN201820161716U CN207719212U CN 207719212 U CN207719212 U CN 207719212U CN 201820161716 U CN201820161716 U CN 201820161716U CN 207719212 U CN207719212 U CN 207719212U
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Abstract
The utility model provides a kind of back side illumination image sensor, and the back side illumination image sensor includes photoreceptor portion and circuit part, wherein the photoreceptor portion includes：Lenticule and optical filter, incident photon, which first passes through lenticule and is then passed through optical filter, to be entered in back side illumination image sensor；Transparent conductive film is located under lenticule and optical filter, and incident photon continues through the transparent conductive film and enters；And first substrate, it is located under transparent conductive film, and for capturing and detecting the photon received；It is characterized in that：Hetero-junctions is formed between transparent conductive film and the first substrate.
Description
Technical field
The utility model is related to a kind of imaging sensors of back-illuminated type structure.Specifically, the utility model is related to one kind with
Back side illumination image sensor based on hetero-junctions photoreceptor.
Background technology
Cmos image sensor is just taking over the imaging sensor market dominated by ccd image sensor.It is limited in order to use
The imaging sensor of size reaches high-resolution, and the size of each pixel constantly becomes smaller in cmos image sensor, this makes photosensitive
Accounting (fill factor) of the area in each elemental area becomes particularly important.Fill factor is low to be meaned to be located on photoreceptor
The metallic circuit of side makes partial photonic be lost in by reflection before reaching photoreceptor, this leverages conventional image sensor
Light receiving efficiency, therefore high fill factor is necessary to high luminous sensitivity.However, constantly to reduce system noise, promoted
Device speed, the circuit needs in each pixel become increasingly complex, then high speed, low noise cmos image sensor in,
Fill factor inevitably reduces.Therefore, to realize that highly sensitive high speed, low noise cmos image sensor are very
Difficult.
The prior art is back-illuminated type (BSI) imaging sensor to the solution of fill factor.It is sensed in back side illumination image
In device, light injects imaging sensor from the back side (i.e. photoreceptor portion side) of imaging sensor, and the circuit in pixel is being schemed
As the front side of sensor.Therefore, competition for space of the photoreceptor with pixel circuit in semiconductor surface is avoided.In general, back-illuminated
Formula imaging sensor includes photoreceptor portion and circuit part successively since light incident side, and photoreceptor portion may include successively
The components such as lenticule, optical filter, transparency conducting layer and the first substrate, and circuit part may include such as interlayer insulating film, mutually
The even basic element of character such as layer.
Such as U.S. Patent No. US7,875,948B2 application, light inject image sensing from the back side of imaging sensor
Device will first pass through photoreceptor portion.In this us patent, a kind of imaging sensor of back-illuminated type is described, including：Setting exists
Light receiving element in first substrate；Interlayer insulating film on the first substrate with the light receiving element is set；
It is spaced apart with the light receiving element and across the alignment keys of the interlayer insulating film and the first substrate；With multilayered structure
The multiple interconnection layers being arranged on the interlayer insulating film, wherein the back side of nethermost interconnection layer is connected to the alignment keys；
Cover the front-side passivation layer of the interconnection layer；Back side passivation layer on the back side of the first substrate is set；Setting exists
On the back side passivation layer and it is connected to the transparency conducting layers of the alignment keys；And be arranged on the transparency conducting layer with
In face of the colored filter and lenticule of the light receiving element.Wherein, first substrate includes p-type (the first conduction type) conduction
Material and it is doped with p type impurity ion, and light receiving element and source electrode and drain electrode are all doped with N-type (the second conductive-type
Type), to form semiconductor PN, which makes depletion region (i.e. efficient photoelectricity treater carrier-collection areas) be in imaging sensor
The front side circuit part side of imaging sensor (i.e. close to).
But in these such as U.S. Patent No. US7, the back side illumination image sensor of 875,948B2 application, sense
" knot " of light device, majority is semiconductor PN, still in the front side of imaging sensor.Most of light photon is in semiconductor
Former microns of (silicon) are absorbed, it means that most of photon is absorbed in the back side close to imaging sensor.In light
After son is absorbed, generates carrier (photoelectric effect) and collected for device.Highest carrier collection efficiency be happened at " knot " and
Adjacent position.Therefore, possess the region of highest carrier collection efficiency and highest (or most of) photonic absorption
And the region that photoelectric effect occurs is spatially misaligned.Therefore, the overall photoresponse of back side illumination image sensor is that do not have
There is optimization.In order to make the region that photonic absorption and most photoelectric effect occur with efficient carrier-collection areas apart from more
Closely, what back side illumination image sensor was produced is very thin, and thickness is mostly from several microns to tens micron.Realize ultra-thin image sensing
A kind of method of device is that the method etched portions semiconductor of chemical method, mechanical means or chemistry and mechanical bond is used from back side
(silicon) substrate material.This is very exquisite and complicated technique, often causes very low production yield and higher production difficult
Degree and cost.The method that another kind realizes ultra-thin imaging sensor is to use special SOI (Silicon-On-Insulator)
Substrate, this substrate are more expensive than conventional silicon substrate very much.
In addition, although cmos image sensor have passed through flourishing for recent years, most crucial part is photosensitive
Device is still using most traditional silicon substrate PN junction photoreceptor.One the reason is that, traditional silicon substrate PN junction photoreceptor can use and system
Make the realization of pixel circuit same process；Another reason is in the past, and photoreceptor is not to influence cmos image sensor performance
Bottleneck.However, in the case where pixel circuit and CMOS technology rapidly develop, traditional silicon substrate PN junction photoreceptor shows that technique needs
Ask and performance on deficiency.Traditional silicon substrate PN junction photoreceptor requires to be formed in high temperature (being mostly 900 DEG C or more).High temperature process steps
Photosensitive region minority carrier life time may be seriously affected, to influence the conversion quantum efficiency of photoreceptor.In addition, high-temperature technology make it is photosensitive
Device needs to prepare simultaneously with pixel circuit, this makes the production technology of two parts of device not to be separately optimized targetedly,
Production technology conditions each other, and device performance is finally made not optimize really.Current CMOS technology is quite ripe (to be arrived at
10nm technology nodes), however optimize CMOS technology can not often be directly used in imaging sensor prepare in (often make
With 60nm even 90nm technology nodes).One of the major reasons are exactly component part mostly important in imaging sensor, photoreceptor
Preparation process, seriously restrict the preparation of circuit in pixel.
Therefore, a kind of high fill factor that can benefit from back side illumination image sensor and with relatively easy, cheap life
Production. art realizes that the imaging sensor of high luminous sensitivity is required.
Utility model content
The purpose of this utility model is to provide based on the hetero-junctions photoreceptor that transparent conductive film and silicon substrate are formed
Back side illumination image sensor.
Novel silicon base hetero-junctions photoreceptor has a common boundary still using silicon chip as substrate, with the film deposited under low temperature condition in hetero-junctions
Place forms depletion region, and then helps to collect the free carrier of opto-electronic conversion generation, generates photosignal.Low temperature preparation it is intrinsic
Firstly reduce high temperature preparation process；More importantly the structure and low temperature preparation condition of such hetero-junctions photoreceptor make photoreceptor
It can be eventually fabricated after the completion of prepared by cmos circuit, and not interfere with completed cmos circuit portion in photoreceptor preparation process
Point.In this way, the harsh restriction to pixel circuit design is released from.
The combination of back side illumination image sensor and novel heterojunction photoreceptor is almost ideal to solve typical back side illumination image
The defect of sensor.First, the back side illumination image sensor structure in conjunction with after remains the advantage close to 100% fill factor；
Secondly, the efficient absorption region of light and the efficient collecting zone of free carrier coincide with back surface.This eliminates the need for substrate quarter
The necessity of erosion, on the one hand reduces technique threshold, on the one hand avoids the use of expensive special substrate S OI.
The above-mentioned purpose of utility model and advantage of the utility model are realized in the following manner：
The utility model provides a kind of back side illumination image sensor comprising photoreceptor portion and circuit part, wherein institute
Stating photoreceptor portion includes：Lenticule and optical filter, incident photon first pass through the lenticule and select to filter by optical filter again
After enter in back side illumination image sensor；Transparent conductive film is located under lenticule and optical filter, and incident photon after
It is continuous to be entered by the transparent conductive film；And first substrate, it is located under transparent conductive film, and for capturing and detecting
The photon received；Wherein, hetero-junctions is formed between transparent conductive film and the first substrate.
In a preferred embodiment, the photoreceptor portion further includes being located among transparent conductive film and the first substrate
Passivation layer on the second surface of first substrate.
In a preferred embodiment, the thickness of the passivation layer is 0.5 nanometer to 10 nanometers, preferably 2 nanometers to 3 nanometers.
In some other embodiment, the thickness of the passivation layer can also be 10 nanometers to 500 nanometers, preferably 50 nanometers
To 100 nanometers.
In practical applications, 10 nanometers to 500 nanometers of passivation layer can be received in terms of reducing noise better than 0.5 nanometer to 10
The passivation layer of rice, and 0.5 nanometer to 10 nanometers of passivation layer is better than 10 nanometers extremely in conversion quantum efficiency, response speed etc.
500 nanometers of passivation layer.Therefore, in different application scene the thickness of passivation layer can select according to different needs it is different excellent
Change mode.
In a preferred embodiment, the passivation layer is conductting layer.Passivation layer material itself can be insulating materials, passivation
Layer lateral isolation and longitudinally through tunneling effect, the principles such as fault of construction realize charge conducting.
In a preferred embodiment, the passivation layer can be by wide bandgap material, low bandgap material, band gap engineering material
Material, the passivation layer can be by crystalline materials, amorphous material, fine structure material, nano structural material, intrinsic material, compound
The formation such as material, alloy material, dopant material.
In a preferred embodiment, the first substrate is lightly doped N-type silicon substrate.
In a preferred embodiment, the thickness of the first substrate is 2 microns to 200 microns, preferably 20 microns to 80 microns.
In a preferred embodiment, the transparent conductive film can be used as counnter attack layer so as to selectively reduce one kind
Or the reflection of a variety of incident photons with predetermined wavelength.
In a preferred embodiment, the composition of the transparent conductive film includes tin indium oxide (ITO), zinc oxide (ZnO), mixes
Miscellaneous zinc oxide (doped ZnO), indium oxide (In2O3), tin oxide (SnO2) etc..
In a preferred embodiment, the thickness of the transparent conductive film is 10 nanometers to 500 nanometers, preferably 80 nanometers.
In a preferred embodiment, the photoreceptor portion further includes other counnter attack layers, these counnter attack layers and electrically conducting transparent
Film is used together selectively to reduce the reflection of one or more incident photons with predetermined wavelength.
In a preferred embodiment, the circuit part of the back side illumination image sensor may include back surface passivation domain,
The back surface passivation domain is arranged on the first surface of first substrate opposite with the second surface of the first substrate, and described
Back surface passivation domain belongs to heavily doped region, and (n-type doping or p-type are mixed with the doping with the first substrate same type
It is miscellaneous).
The utility model also provides a kind of method of manufacture back side illumination image sensor, and the method includes following step successively
Suddenly：
First substrate is provided；
The circuit part of back side illumination image sensor is made on the basis of the first substrate；
The photoreceptor portion of back side illumination image sensor, the wherein system of photoreceptor portion are made on the basis of the first substrate
Work includes：
Transparent conductive film is formed on the first substrate,
Optical filter and lenticule are made on nesa coating,
Wherein, hetero-junctions is formed between transparent conductive film and the first substrate.
In a preferred embodiment, before transparent conductive film formation, passivation layer is formed on the first substrate, wherein described
Passivation layer is located on the second surface of the first substrate among transparent conductive film and the first substrate.
In a preferred embodiment, the thickness of the passivation layer is 0.5 nanometer to 10 nanometers, preferably 2 nanometers to 3 nanometers.
In some other embodiment, the thickness of the passivation layer can also be 10 nanometers to 500 nanometers, preferably 50 nanometers
To 100 nanometers.
In practical applications, 10 nanometers to 500 nanometers of passivation layer can be received in terms of reducing noise better than 0.5 nanometer to 10
The passivation layer of rice, and 0.5 nanometer to 10 nanometers of passivation layer is better than 10 nanometers extremely in conversion quantum efficiency, response speed etc.
500 nanometers of passivation layer.Therefore, in different application scene the thickness of passivation layer can select according to different needs it is different excellent
Change mode.
In a preferred embodiment, the passivation layer is conductting layer.Passivation layer material itself can be insulating materials, passivation
Layer lateral isolation and longitudinally through tunneling effect, the principles such as fault of construction realize charge conducting.
In a preferred embodiment, the passivation layer can be by wide bandgap material, low bandgap material, band gap engineering material
The formation such as material, crystalline material, amorphous material, fine structure material, nano structural material, intrinsic material, composite material, alloy material
The formation such as material, dopant material.
In a preferred embodiment, first substrate is lightly doped N-type silicon substrate.
In a preferred embodiment, the thickness of first substrate is 2 microns to 200 microns, preferably 20 microns to 80
Micron.
In a preferred embodiment, the transparent conductive film can be used as counnter attack layer so as to selectively reduce one kind
Or the reflection of a variety of incident photons with predetermined wavelength.
In a preferred embodiment, the composition of the transparent conductive film includes tin indium oxide (ITO), zinc oxide (ZnO), mixes
Miscellaneous zinc oxide (doped ZnO), indium oxide (In2O3), tin oxide (SnO2) etc..
In a preferred embodiment, the thickness of the transparent conductive film is 10 nanometers to 500 nanometers, preferably 80 nanometers.
In a preferred embodiment, the photoreceptor portion also sets up other counnter attack layers, these counnter attack layers and electrically conducting transparent
Film is used together selectively to reduce the reflection of one or more incident photons with predetermined wavelength.
In a preferred embodiment, the manufacture of the photoreceptor portion can be carried out at 250 DEG C or less.
In a preferred embodiment, further include in the second surface phase with the first substrate in circuit part manufacturing process
To the first substrate first surface on setting back surface passivation domain, and the back surface passivation domain belongs to heavily doped area
Domain, and with the doping with the first substrate same type (n-type doping or p-type are adulterated).
Based on above-mentioned narration, the back side illumination image sensor of the utility model be formed by hetero-junctions be located at pixel control and
The opposite side of reading circuit is located at and circuit difference table to be formed by depletion region (i.e. efficient photoelectricity treater carrier-collection areas)
The back side in face, and with close on the photon efficient absorption area coincidence of transparent conductive film in the back side of the first substrate.
Transparent conductive film in the utility model is the part as hetero-junctions, can also include reflection or counnter attack work(
Can, the thickness of transparent conductive film can be according to the refractive index, the refractive index of the first substrate and the tool of target light of transparent conductive film
Bulk wave length designs to reduce the reflection of these target lights to play anti-reaction.Similar design can also be applied to
Reflection function is to refuse the injection of some target lights.Different from traditional back side illumination image sensing based on PN junction photoreceptor
Device need additional optical coating or component (such as in United States Patent (USP) US7,875,948 to play anti-counteractive back side blunt
Change layer 125) to introduce anti-reflection function.
In some embodiments, transparent conductive film is configured as single layer counnter attack layer to realize counnter attack work(by simple thickness
Can, the preparation of counnter attack layer is therefore simplified without independent step manufacture counnter attack layer.In other embodiments, transparent
Conductive film can also be used as one layer of multilayer counnter attack layer and that anti-reaction is played together with other counnter attack layers is anti-to simplify
The preparation of anti-layer.
Back surface passivation domain in the utility model is the heavy doping with the first substrate same conductivity (for example, by using about 1
×1018-20cm-3) region, it collects photosignal as potential energy wells help and reduces photocurrent carrier answering in first surface
It closes.
It is previously mentioned in manufacturing method in the utility model, herein it should be noted that traditional photosensitive based on PN junction
In the back side illumination image sensor of device, because of depletion region (the i.e. efficient photoelectricity treater carrier collection area caused by PN junction photoreceptor
Domain) it is misaligned with the photon efficient absorption region of closing on transparent conductive film, so needing etched substrate or using specialized substrates (ratio
Such as SOI substrate), so as to make depletion region and photon efficient absorption region as close possible to even partially overlap.Therefore, the prior art
The thickness of the first substrate after middle etching is usually 10 microns hereinafter, being even as thin as 2-3 microns, to make photon efficient absorption area
Domain is overlapped with depletion region (i.e. efficient photoelectricity treater carrier-collection areas) as possible.But etched substrate technology difficulty is very big and good
Rate is low, and under identical tolerance cases, substrate thickness is low to make performance difference caused by tolerance amplify；And use specialized substrates price high
It is expensive.
In order to improve the above problem, the utility model uses the sensing of the back side illumination image based on hetero-junctions photoreceptor
Device, wherein hetero-junctions will be formed by transparent conductive film and the first substrate (such as N-type silicon substrate), the help light being then consequently formed
The depletion region of electrical signal collection is located at back side with circuit different surfaces, and with photon efficient absorption area coincidence, so
The first substrate in the present embodiment needs without substrate etching or only slight substrate etching, and technology difficulty is greatly lowered, carries
Rise yield.Meanwhile photon efficient absorption region can certain journey with overlapping for depletion region (i.e. efficient photoelectricity treater carrier-collection areas)
Conversion quantum efficiency is promoted on degree.
In addition, can also reduce the noise as caused by semiconductor surface defect with certain thickness first substrate and have
Conducive to the absorption of light.If the thickness of the first substrate is too thin, (such as 10 microns in the prior art hereinafter, to be even as thin as 2-3 micro-
Rice), serious influence can be caused on the absorption of the near infrared light with longer wavelength, such imaging sensor is near infrared light
Susceptibility is very low because near infrared light penetration depth is wideer than visible, most near infrared light photons can penetrate photosensitive region without
Method is received, for example the near infrared light penetration depth in a silicon substrate that wavelength is 940 nanometers is about 100 microns.In certain feelings
Under condition (such as the thickness of the first substrate of selection is 100 microns), it is convenient to omit the step of etching, to this without over etching
The first substrate can be more preferable to the near-infrared absorption effect with fixed wave length.Under normal conditions, for 860 nanometers
The thickness of near-infrared visible light, the first substrate after etching is preferably 20 microns to 80 microns.
Optimize for the anti-reflection of the light to different target wavelength, can be realized by adjusting the thickness of transparent conductive film
(i.e. transparent conductive film not only forms hetero-junctions photoreceptor, while realizing or assisting to realize optics counnter attack layer function).Electrically conducting transparent
The thickness of film be about 10 nanometers to 500 nanometers (for example, about 20 nanometers, 50 nanometers, 80 nanometers, 100 nanometers, 200 nanometers, 500 receive
Rice etc.), preferably from about 80 nanometers (being directed to about 600 nano red visible lights).This thickness by transparent conductive film refractive index and
The wavelength for the light to be directed to is designed.
It should be noted that transparent conductive film, which can be used as single layer counnter attack layer, realizes anti-reflection function, which simplify counnter attacks
Layer preparation and save the step of counnter attack layer is prepared separately in the prior art.In other embodiments, transparent conductive film
As one layer of multilayer counnter attack layer anti-reflection function can be realized together with its counnter attack layer.
Compared with prior art, since the PN junction of the prior art is high-temperature technology, circuit and photoreceptor need to synchronize preparation, no
Then the high-temperature technology of PN junction can influence the circuit part prepared, therefore the preparation process of circuit and photoreceptor can not be excellent respectively
Change.And hetero-junctions is formed as low temperature process (be less than 250 DEG C) in the present invention, so the formation of hetero-junctions does not influence
Any circuit part prepared, therefore can finally prepare photoreceptor by after circuit preparation optimization, make photoreceptor and circuit work
Skill all realizes optimization.That is in the present embodiment, photoreceptor finally can be being prepared after prepared by circuit part and optimize,
Because the low temperature process of the formation of hetero-junctions does not interfere with the circuit part prepared.
Part back side illumination image sensor makes passivation layer in back surface in the prior art, and counnter attack layer and transparent conductive film are come
Apply back side reverse bias voltage, to reduce the compound of back side free carrier, to promote conversion quantum efficiency.The present embodiment
Structure seem and have a similarity with this structure, but practical structures and application purpose difference are apparent.First, in passivation layer property side
Face, passivation layer is insulating layer in the prior art, provides capacitance, is reduced by repelling few sub (minority carrier) to realize
Surface it is compound, and passivation layer is conductting layer in this kind of structure by taking the present embodiment as an example, and it is real to pass through the principles such as tunnelling current
Existing current lead-through.Secondly, in terms of passivation layer thickness, passivation layer thickness is hundreds of nanometers to several microns in the prior art, and
Passivation layer is several nanometers to hundreds of nanometers in this kind of structure by taking the present embodiment as an example.It is foreseeable selection be 0.5 nanometer extremely
10 nanometers, preferably from about 2 nanometers to 3 nanometers, in this case passivation layer can have the properties such as ultra-thin and tunnelling, this type
Passivation layer can improve the overall performance of back side illumination image sensor, help to improve conversion quantum efficiency in photoreceptor and photosensitive
Susceptibility.In foreseeable other selections, the thickness of passivation layer can also be 10 nanometers to 500 nanometers, and preferably 50 nanometers extremely
100 nanometers.In practical applications, 10 nanometers to 500 nanometers of passivation layer can be received in terms of reducing noise better than 0.5 nanometer to 10
The passivation layer of rice, and 0.5 nanometer to 10 nanometers of passivation layer is better than 10 nanometers extremely in conversion quantum efficiency, response speed etc.
500 nanometers of passivation layer.Therefore, in different application scene the thickness of passivation layer can select according to different needs it is different excellent
Change mode.
Description of the drawings
Fig. 1 is the section view of the first embodiment of the back side illumination image sensor of the utility model；
Fig. 2 a to Fig. 2 i show the manufacturing process of the first embodiment of back side illumination image sensor；
Fig. 3 is the section view of the second embodiment of the back side illumination image sensor of the utility model；
Fig. 4 a to Fig. 4 j show the manufacturing process of the second embodiment of back side illumination image sensor；
Specific implementation mode
The embodiments of the present invention are related to the back side illumination image sensor according to the utility model embodiment and its preparation
Method, it particularly relates to which the back side illumination image based on hetero-junctions photoreceptor according to the utility model embodiment senses
Device and preparation method thereof.
With reference to attached drawing, indicate different attached through the same or similar reference numeral of the various embodiments of the utility model
Identical and similar element in figure.
Since the utility model is about the back side illumination image sensor based on hetero-junctions photoreceptor, so back-illuminated type
The structure of the circuit part of imaging sensor can substantially use state of the art (such as U.S. Patent No. US7,
875,948B2) known circuit structure and manufacturing process in, in the following embodiments, the utility model only introduces circuit
The difference and improvement of part and the prior art.
Since the utility model is about the back side illumination image sensor based on hetero-junctions photoreceptor, that is to say, that relate to
And and propose application of the hetero-junctions photoreceptor in back side illumination image sensor for the first time, so in the following embodiments,
Hetero-junctions photoreceptor will be introduced in the application of back side illumination image sensor, the structure of back side illumination image sensor and manufacturer
Method.
Fig. 1 shows the section view of the first embodiment of the back side illumination image sensor of the utility model, wherein attached drawing
" 100 " are marked to indicate the back side illumination image sensor pixel unit based on hetero-junctions photoreceptor.In this embodiment, referring to
Fig. 1, the pixel unit 100 is by sequence from top to bottom successively including lenticule 190, smooth layer 150 (for making smooth surface simultaneously
And conducive to the preparation of lenticule), the optical filter 170 that is arranged in smooth layer 150, transparent conductive film 130, the first substrate 10, the
One to the 4th interlayer insulating film 30,50,70,90 and the second substrate 110.Wherein, cheap N-type may be used in the second substrate
Or P-type silicon substrate or glass substrate, in the present embodiment, using P-type silicon substrate.In the first substrate 10 from right to left
Source electrode and drain electrode 22 successively equipped with transistor in back surface passivation domain 14, the first separation layer 18, pixel control and reading circuit,
26 and second separation layer 34, these components all (combined with the first interlayer insulating film with the first surface 20 of the first substrate 10
The front surface of first substrate 10) it combines.The door of transistor in pixel control and reading circuit is equipped in the first interlayer insulating film
Pole insulating layer 38 and gate pole conductive layer 42.In addition, further respectively having interlayer in first to fourth interlayer insulating film 30,50,70,90
Conductive layer 46,52,56,64.
Herein it should be noted that in order to simply consider, the present embodiment exemplarily only shows the portion of circuit part
Part, in practical application or other embodiments, circuit part can there are different settings, (for example there is not according to actual demand
With the interlayer insulating film of number, interlayer conductive layer etc.), can also include according to actual demand it is commonly used in the prior art its
Its component, such as United States Patent (USP) US7, the alignment keys etc. in 875,948B2.
In the embodiment shown in fig. 1, setting in addition to transparent conductive film 130, the first substrate 10 and back surface passivation domain 14
Outside setting, the setting of other associated components may be by techniques known in the art completion, such as introduce in the background technology
United States Patent (USP) US7,875,948B2.
About transparent conductive film 130, the setting of the first substrate 10 and back surface passivation domain 14, the present embodiment, which exists, such as to be divided into
It sets:Transparent conductive film 130 is arranged on 10 back side of the first substrate, wherein the shape between transparent conductive film 130 and the first substrate 10
At hetero-junctions.Back surface passivation domain 14 is arranged on the first surface 20 (i.e. the front surface of the first substrate 10) of the first substrate 10.
Be formed by hetero-junctions be located at pixel control and reading circuit opposite side, i.e., with the homonymy of light entrance area.The
One substrate 10 can be N-type either P-type silicon substrate (or SOI substrate), and the first substrate 10 serves as a contrast for N-type silicon in the present embodiment
Bottom, and lightly doped (for example, about 1 × 1013-15cm-3).In addition, in the present embodiment, the sense of the back side illumination image sensor
Light device structure is silicon based hetero-junction, i.e. silicon substrate (N-type) (i.e. the first substrate 10) and transparent conductive film 130 (N-type) is formed heterogeneous
Knot.It is emphasized that in the hetero-junctions of other embodiments, the first substrate 10 and transparent conductive film 130 can have identical
Either different conduction types (such as N-type or p-type).
Since the utility model is related to the back side illumination image sensors based on hetero-junctions photoreceptor, so, it is different from
In the prior art in preparing circuitry processes (or before, or later), pair it is carried out with the photoreceptor region on surface with circuit and lining
The different doping of bottom conduction type, to form PN junction (such as United States Patent (USP) US7, the PN junction employed in 875,948B2), and
In the present embodiment, doping identical with substrate conduction type is being carried out with the photoreceptor region on surface with circuit, to form N-N
+ height back of the body passivation domain.In addition, PN junction in the prior art is located at the homonymy of pixel control and reading circuit, and in the present embodiment,
Hetero-junctions is located at the opposite side of pixel control and reading circuit.
Depletion region (i.e. efficient photoelectricity treater carrier collection is formd when transparent conductive film 130 is arranged on the first substrate 10
Region), it is emphasized that, it helps the depletion region that photosignal is collected to be located at the back side with circuit different surfaces, is led by transparent
Electrolemma 130 is provided with the hetero-junctions photoreceptor that N-type silicon substrate 10 is formed.In this case, it is formed by depletion region (i.e. efficiently
Photocurrent carrier collecting zone) and the photon efficient absorption area coincidence of transparent conductive film 130 is closed in the back of the body of the first substrate 10
Side.
In the present embodiment, a part of the transparent conductive film 130 as hetero-junctions can also include reflection or counnter attack work(
Energy.The thickness of transparent conductive film 130 can be according to transparent conductive film 130 refractive index, the refractive index and target of the first substrate 10
The specific wavelength of light designs to reduce the reflection of these target lights to play anti-reaction.Similar design may be used also
To refuse the injection of some target lights applied to reflection function.Different from traditional back-illuminated type based on PN junction photoreceptor
Imaging sensor needs additional optical coating or component (such as to play counnter attack work in United States Patent (USP) US7,875,948B2
Back side passivation layer 125) to introduce anti-reflection function.
In the present embodiment, transparent conductive film 130 is configured as single layer counnter attack layer to realize counnter attack by simple thickness
Therefore function simplifies the preparation of counnter attack layer without independent step manufacture counnter attack layer.In other embodiments, thoroughly
Bright conductive film 130 can also be used as one layer of multilayer counnter attack layer and play anti-reaction together with other counnter attack layers to simplify
The preparation of counnter attack layer.
In the present embodiment, the back surface passivation domain 14 on the first surface 20 of the first substrate 10, which is arranged, is and the first lining
The heavy doping of 10 same conductivity of bottom is (for example, by using about 1 × 1018-20cm-3) region, collect optical telecommunications as potential energy wells help
Number and reduce photocurrent carrier in the compound of first surface 20.
Back side illumination image sensor pixel unit 100 as shown in Figure 1 can pass through the following step as shown in Fig. 2 a to Fig. 2 i
It is rapid to complete：
Fig. 2 a show that the first substrate 10 when processing starts, first substrate 10 have the first surface 20 of the first substrate
(i.e. the front surface of the first substrate) and original second surface 40 (i.e. the original rear surface of the first substrate).With the first substrate 10
Based on (N-type silicon substrate being lightly doped), by technical method known in the art, (including photoengraving, ion implanting are mixed first
Miscellaneous, anneal, etching, passivation layer deposition, oxidation etc.) preparation of realizing pel array and pixel internal circuit, it completes such as Fig. 2 b extremely
The step of Fig. 2 d, wherein it includes the first separation layer 18 in the first substrate 10, pixel control and reading as shown in Figure 2 b to be formed
The source electrode and drain electrode 22,26 of transistor and the second separation layer 34 in circuit；It is as shown in Figure 2 c in the first interlayer insulating film
The gate insulation layer 38 and gate pole conductive layer 42 of transistor in pixel control and reading circuit, and it is respectively provided at first to fourth
Interlayer conductive layer 46,52,56,64 in interlayer insulating film 30,50,70,90；The 4th interlayer insulating film of adjoining as shown in Figure 2 d
90 the second substrate 110 (P-type silicon substrate is used in the present embodiment).
Different from the prior art, in the prior art, in preparing circuitry processes (or before, or later), pair with
Circuit is carried out with the photoreceptor region on surface and the different types of doping of substrate conduction, to form PN junction.And in the present embodiment,
Doping identical with substrate conduction type is being carried out with the photoreceptor region on surface with circuit, to form N-N+ height back of the body passivation
Domain is to reduce compound and be exported conducive to photosignal.This means that there is no depletion region side with the photoreceptor region on surface with circuit
Photosignal is helped to collect.In the present embodiment, the depletion region that photosignal is collected is helped to be located at the back side with circuit different surfaces, by
Transparent conductive film is provided with the hetero-junctions photoreceptor that N-type silicon substrate is formed.
It also differ in that, when preparing circuit, prepares the back of the body table being arranged on the first surface 20 of the first substrate 10
Face passivation domain 14 (as shown in Figure 2 b) is the heavy doping with 10 same conductivity of the first substrate (for example, by using about 1 × 1018- 20cm-3) region, it collects photosignal as potential energy wells help and reduces photocurrent carrier in the compound of first surface 20.The back of the body
Surface passivation domain 14 can be realized by techniques known in the art, these technologies include but not limited to that ion implanting, high temperature move back
Fire, High temperature diffusion, doped layer deposition, passivation layer formation etc., preferably ion implanting and high annealing.
In the present embodiment, after circuit completes with surface side, by the methods of bonding known in the art, by silicon
Piece is connected in support substrate, is attached on the second substrate 110 (as shown in Figure 2 d), to make the back surface of the first substrate 10
(i.e. original second surface 40) is easy to process.As shown in Figure 2 e, it is hundreds of microns by thickness from the back surface of the first substrate 10
First substrate of (such as 100 microns, 200 microns, 500 microns) uses chemical method, mechanical means or chemistry and mechanical mixture
Method is etched to about 2 microns to 200 microns (for example, about 10 microns, 20 microns, 30 microns, 50 microns or 100 microns), preferably
20 microns to 80 microns, or without etching.As shown in Figure 2 e, the original second surface 40 of the first substrate 10 is after over etching
The second surface 60 after etching is formed, and after over etching, as shown in figure 2f, the first substrate 10 is with from the after etching
The substrate that first surface 20 is above-mentioned thickness is arrived on two surfaces 60.
Herein it should be noted that traditional based in the back side illumination image sensor of PN junction photoreceptor, because serving as reasons
Depletion region caused by PN junction photoreceptor (i.e. efficient photoelectricity treater carrier-collection areas) and the photon for closing on transparent conductive film are efficient
Absorption region is misaligned, so needing etched substrate or using specialized substrates (such as SOI substrate), to make depletion region and photon
Efficient absorption region as close possible to even partially overlap.Therefore, the thickness of the first substrate 10 after etching in the prior art is logical
Be often 10 microns hereinafter, be even as thin as 2-3 microns, so as to make photon efficient absorption region as possible with depletion region (i.e. efficient photoelectricity treater
Carrier-collection areas) it overlaps.But etched substrate technology difficulty is very big and yield is low, and under identical tolerance cases, substrate
Thickness is low to make performance difference caused by tolerance amplify；And use specialized substrates expensive.
In order to improve the above problem, the utility model uses the sensing of the back side illumination image based on hetero-junctions photoreceptor
Device, wherein hetero-junctions will be formed by transparent conductive film and the first substrate 10 (such as N-type silicon substrate), the help being then consequently formed
The depletion region that photosignal is collected is located at back side with circuit different surfaces, and with photon efficient absorption area coincidence, so
The first substrate 10 in the present embodiment is without substrate etching or only needs slight substrate etching, and technique hardly possible is greatly lowered
Degree promotes yield.Meanwhile overlapping for photon efficient absorption region and depletion region (i.e. efficient photoelectricity treater carrier-collection areas) can one
Determine to promote conversion quantum efficiency in degree.
In addition, with certain thickness first substrate 10 can also reduce as caused by semiconductor surface defect noise and
Be conducive to the absorption of light.If the thickness of the first substrate 10 is too thin, (such as 10 microns in the prior art hereinafter, be even as thin as 2-
3 microns), serious influence can be caused on the absorption of the near infrared light with longer wavelength, such imaging sensor is to near-infrared
The susceptibility of light is very low, because near infrared light penetration depth is wideer than visible, most near infrared light photons can penetrate photosensitive area
Domain can not be received, for example the near infrared light penetration depth in a silicon substrate that wavelength is 940 nanometers is about 100 microns.At certain
In the case of a little (such as the thickness of the first substrate of selection is 100 microns), it is convenient to omit the step of etching, to it is this without
First substrate of etching can be more preferable to the near-infrared visible absorption effect with fixed wave length.Under normal conditions, for
The thickness of 860 nanometers of near-infrared visible light, the first substrate 10 is preferably 20 microns to 80 microns.
Then, as shown in Figure 2 g, after being cleaned by standard surface, the first substrate it is etched after second surface 60
It is upper to use physical deposition, such as chemical deposition of low-pressure chemical vapor deposition (LPCVD), such as plasma enhanced chemical vapour phase
Deposit the plasma deposition of (PECVD), combined deposition, pulsed laser deposition, liquid deposition, such as direct current of physical chemistry deposition
Sputtering sedimentation, electron beam evaporation (e-beam evaporation), the thermal evaporation (thermal of sputtering and radio-frequency sputtering
) etc. evaporation well known technology makes transparent conductive film in fields.In addition, the composition of transparent conductive film 130 includes but not
It is limited to tin indium oxide, zinc oxide, doping zinc-oxide etc..In the present embodiment, transparent conductive film 130 is mixed by the aluminium of radio frequency sputtering deposition
Miscellaneous zinc oxide (Al-ZnO) is realized.
Optimize for the anti-reflection of the light to different target wavelength, the thickness of adjusting transparent conductive film 130 can be passed through
It realizes (i.e. transparent conductive film not only forms hetero-junctions photoreceptor, while realizing or assisting to realize optics counnter attack layer function).It is transparent
The thickness of conductive film 130 be about 10 nanometers to 500 nanometers (for example, about 20 nanometers, 50 nanometers, 80 nanometers, 100 nanometers, 200 receive
Rice, 500 nanometers etc.).In the present embodiment, the thickness of transparent conductive film 130 is about 80 nanometers.This thickness passes through to electrically conducting transparent
The wavelength of film refractive index and the light to be directed to is designed, and the design is directed to about 600 nano red visible lights.
It should be noted that taking the scheme of optimization in the present embodiment, i.e., transparent conductive film 130 is used as single layer counnter attack
Layer realizes anti-reflection function, which simplify the preparation of counnter attack layer and saves the step of counnter attack layer is prepared separately in the prior art.
In other embodiments, transparent conductive film 130 can also be used as one layer of multilayer counnter attack layer realized together with its counnter attack layer it is anti-
Counter-function.
After the making for completing transparent conductive film, using technology well known in the art, as shown in fig. 2h in transparent conductive film
Upper surface 80 on make smooth layer 150 to make smooth surface be conducive to the preparation of lenticule, while in transparent conductive film
Optical filter 170 is made in smooth layer 150 on upper surface 80, then as shown in fig. 2i, using technology well known in the art, flat
Optical microlens 190 are made on the upper surface 120 of slip layer 150, and are finally completed the making of imaging sensor.
Compared with prior art, since the PN junction of the prior art is high-temperature technology, circuit and photoreceptor need to synchronize preparation, no
Then the high-temperature technology of PN junction can influence the circuit part prepared, therefore the preparation process of circuit and photoreceptor can not be excellent respectively
Change.And hetero-junctions is formed as low temperature process (be less than 250 DEG C) in the present invention, so the formation of hetero-junctions does not influence
Any circuit part prepared, therefore can finally prepare photoreceptor by after circuit preparation optimization, make photoreceptor and circuit work
Skill all realizes optimization.That is in the present embodiment, photoreceptor finally can be being prepared after prepared by circuit part and optimize,
Because the low temperature process of the formation of hetero-junctions does not interfere with the circuit part prepared.
Fig. 3 shows the section view of the second embodiment of the back side illumination image sensor of the utility model, wherein attached drawing
" 200 " are marked to indicate the back side illumination image sensor pixel unit based on hetero-junctions photoreceptor.In this embodiment, referring to
Fig. 3, pixel unit 200 have structure similar with first embodiment shown in Fig. 1.This will not be repeated here for identical part, please join
See the narration of first embodiment relevant portion.The difference is that passivation layer 210 is arranged in the first substrate 10 and transparent conductive film
Between 130, hood 68 is arranged on the upper surface of transparent conductive film 130 80 and is centered around around optical filter, the second table
Face pixel separation is arranged on the second surface 60 of the first substrate in the first substrate 10 from area 72 and is arranged to and hood
68 is corresponding, first surface pixel separation be arranged on the first surface 20 of the first substrate in the first substrate 10 from area 76 and
It is arranged to corresponding from area 72 with hood 68 and second surface pixel separation.Depth of the pixel separation from area 72 and 76 in Fig. 3
Ratio shows that actual ratio is alterable for demonstration explanation, it might even be possible to which the two is fused to same through isolated area.
Fig. 4 a to Fig. 4 j show the preparation process of the second embodiment of the back side illumination image sensor of the utility model, should
Preparation process is similar with the preparation process of above-mentioned first embodiment, and this will not be repeated here for identical part, and it is real to refer to first
Apply the narration of a relevant portion.The difference is that as shown in Figure 4 b, when preparing circuit, preparing and being arranged in the first substrate 10
First surface 20 on first surface pixel separation from area 76, positioned at the close edge of the first substrate 10 and be centered around
One separation layer 18, pixel control and reading circuit in transistor source electrode and drain electrode 22,26 and the second separation layer 34 around；
After obtaining the second surface 60 after the etching of the first substrate 10, as shown in figure 4g, on it by second surface pixel separation from area
72 are arranged in the first substrate 10, and second surface pixel separation is opposite from area 76 from area 72 and first surface pixel separation
It answers.Depth scale of the pixel separation from area 72 and 76 shows that actual ratio is alterable, it might even be possible to which the two is melted for demonstration explanation
It is combined into same through isolated area.
It also differ in that, as shown in figure 4h, after standard surface cleans, after the etching of the first substrate 10
Passivation layer 210 is made by using techniques known in the art on two surfaces 60, these technologies include but not limited to use physics
Deposition, such as chemical deposition of low-pressure chemical vapor deposition (LPCVD), such as plasma enhanced chemical vapor deposition
(PECVD) plasma-deposited, physical chemistry deposition combined deposition, pulsed laser deposition, thermal evaporation, electron beam evaporation, example
Such as d.c. sputtering and the sputtering sedimentation of radio-frequency sputtering, atomic arrangement (atomic alignment), wet oxidation, dry oxidation,
Well known technology makes passivation layer 210 in the fields such as chemical solution oxidation.Passivation layer 210 can be by with identical or different
Material, structure, multiple sublayers of ingredient form to be passivated junction interface (second surface 60 i.e. after the etching of the first substrate 10)
And/or enhancing depletion region is to optimize the performance of photoreceptor.
Passivation layer 210 for example can be by wide bandgap material, low bandgap material, band gap engineering material, crystalline material, amorphous
The formation such as body material, fine structure material, nano structural material, intrinsic material (intrinsic material), composite material, conjunction
The formation such as golden material, dopant material.In certain embodiments, passivation layer 210 for example passes through oxidation, etching, passivation, doping, mill
Light, texurization process (texturing) are formed on the first substrate 10.
The thickness of passivation layer 210 is 0.5 nanometer to 10 nanometers, preferably 2 nanometers to 3 nanometers.In some other embodiment,
The thickness of the passivation layer can also be 10 nanometers to 500 nanometers, preferably 50 nanometers to 100 nanometers.In practical applications, it 10 receives
The passivation layer of rice to 500 nanometers can be in terms of reducing noise better than 0.5 nanometer to 10 nanometers of passivation layer, and 0.5 nanometer to 10
The passivation layer of nanometer is better than 10 nanometers to 500 nanometers of passivation layer in conversion quantum efficiency, response speed etc..Therefore, exist
The thickness of passivation layer can select different optimal ways according to different needs in different application scene.
And in the present embodiment, passivation layer 210 is made about 2 nanometers to 3 by chemical solution method for oxidation (salpeter solution) and is received
Rice silica and realize.
Later, still as shown in figure 4h, on passivation layer 210 transparent conductive film is made using technology known in the art
In 130, with above-mentioned first embodiment the first substrate it is etched after second surface 60 on make transparent conductive film 130
Manufacturing process and property having the same, that is to say, that in the present embodiment, transparent conductive film 130 can be used not only for generating different
Matter knot is also used as counnter attack layer, and specific narration refers to statement of the first embodiment in relation to transparent conductive film 130, does not do herein
It repeats.
After the making for completing transparent conductive film, using technology well known in the art, as shown in figure 4i in transparent conductive film
Upper surface 80 on make smooth layer 150 to be preparation that smooth surface is conducive to lenticule, while in transparent conductive film
Optical filter is made in smooth layer 150 on upper surface 80 and the upper table in transparent conductive film 130 is arranged in hood 68, hood 68
It on face 80 and is centered around around optical filter, then as shown in figure 4j, using technology well known in the art, in smooth layer 150
Upper surface 120 on make optical microlens 190, and be finally completed the making of imaging sensor.
In this embodiment, hood 68, first surface pixel separation from area 76 and second surface pixel separation from area 72
All it is component as known in the art, introduces them into main function in the present embodiment and be to enhance back-illuminated type shown in embodiment
The performance of imaging sensor can be omitted in other embodiments.
Similarly with first embodiment, compared with prior art, since the PN junction of the prior art is high-temperature technology, circuit
And photoreceptor need to synchronize preparation, otherwise the high-temperature technology of PN junction can influence the circuit part prepared, therefore circuit and photosensitive
The preparation process of device can not be separately optimized.And hetero-junctions is formed as low temperature process (be less than 250 DEG C) in the present invention,
So the formation of hetero-junctions does not influence any circuit part prepared, therefore can finally be prepared after circuit preparation optimization
Photoreceptor makes photoreceptor and circuit technology all realize optimization.That is in the present embodiment, can be prepared simultaneously in circuit part
Photoreceptor finally is being prepared after optimization, because the low temperature process of the formation of hetero-junctions does not interfere with the circuit part prepared.
In addition, part back side illumination image sensor makes passivation layer in back surface in the prior art, counnter attack layer and transparent lead
Electrolemma applies back side reverse bias voltage, to reduce the compound of back side free carrier, to promote conversion quantum efficiency.This
The structure of embodiment is seemed has similarity with this structure, but practical structures and application purpose difference are apparent.First, in passivation layer
Properties, passivation layer is insulating layer in the prior art, provides capacitance, by repelling few sub (minority carrier) come real
The compound of surface is now reduced, and passivation layer 210 is conductting layer in this kind of structure by taking the present embodiment as an example, passes through tunnelling current
Etc. principles realize current lead-through.Secondly, in terms of passivation layer thickness, passivation layer thickness is hundreds of nanometers to several in the prior art
Micron, and passivation layer 210 is several nanometers to hundreds of nanometers in this kind of structure by taking the present embodiment as an example.Foreseeable selection is
0.5 nanometer to 10 nanometers, preferably from about 2 nanometers to 3 nanometers, in this case passivation layer can have the properties such as ultra-thin and tunnelling,
The passivation layer of this type can improve the overall performance of back side illumination image sensor, help to improve the quantum conversion in photoreceptor
Efficiency and photosensitive susceptibility.In foreseeable other selections, the thickness of passivation layer can also be 10 nanometers to 500 nanometers, excellent
Select 50 nanometers to 100 nanometers.In practical applications, 10 nanometers to 500 nanometers of passivation layer can be better than 0.5 in terms of reducing noise
The passivation layer of nanometer to 10 nanometers, and 0.5 nanometer to 10 nanometers of passivation layer is excellent in conversion quantum efficiency, response speed etc.
In 10 nanometers to 500 nanometers of passivation layer.Therefore, the thickness of passivation layer can select according to different needs in different application scene
Select different optimal ways.
Claims (19)
1. a kind of back side illumination image sensor, the back side illumination image sensor includes photoreceptor portion and circuit part, wherein
The photoreceptor portion includes：
Lenticule (190) and optical filter (170), incident photon first pass through the lenticule (190) be then passed through optical filter (170) into
Enter into back side illumination image sensor；
Transparent conductive film (130), the transparent conductive film is located under lenticule (190) and optical filter (170), and incident light
Son continues through the transparent conductive film (130) entrance；And
First substrate (10), first substrate (10) are located under transparent conductive film (130), and for capturing and detection connects
The photon received；
It is characterized in that：
Hetero-junctions is formed between transparent conductive film (130) and the first substrate (10).
2. back side illumination image sensor according to claim 1, it is characterised in that：The photoreceptor portion further includes being located at
Passivation layer on the second surface (60) of transparent conductive film (130) and intermediate the first substrate (10) of the first substrate (10)
(210)。
3. back side illumination image sensor according to claim 2, it is characterised in that：The thickness of the passivation layer (210) is
0.5 nanometer to 10 nanometers.
4. back side illumination image sensor according to claim 2, it is characterised in that：The thickness of the passivation layer (210) is 2
Nanometer is to 3 nanometers.
5. back side illumination image sensor according to claim 2, it is characterised in that：The thickness of the passivation layer (210) is
10 nanometers to 500 nanometers.
6. back side illumination image sensor according to claim 2, it is characterised in that：The thickness of the passivation layer (210) is
50 nanometers to 100 nanometers.
7. back side illumination image sensor according to claim 2, it is characterised in that：The passivation layer (210) is conductting layer.
8. back side illumination image sensor according to claim 2, it is characterised in that：The passivation layer (210) can be by width
The formation such as band gap material, low bandgap material, band gap engineering material.
9. back side illumination image sensor according to claim 2, it is characterised in that：The passivation layer (210) can be by crystalline substance
The formation such as body material, amorphous material, fine structure material, nano structural material.
10. back side illumination image sensor according to claim 2, it is characterised in that：The passivation layer (210) can be by this
Levy the formation such as material, composite material, alloy material, dopant material.
11. back side illumination image sensor according to claim 1 or 2, it is characterised in that：First substrate (10) is light
Spend the N-type silicon substrate of doping.
12. back side illumination image sensor according to claim 1 or 2, it is characterised in that：The thickness of first substrate (10)
Degree is 2 microns to 200 microns.
13. back side illumination image sensor according to claim 1 or 2, it is characterised in that：The thickness of first substrate (10)
Degree is 20 microns to 80 microns.
14. back side illumination image sensor according to claim 1 or 2, it is characterised in that：The transparent conductive film (130)
Counnter attack layer be can be used as so as to selectively reduce the reflection of one or more incident photons with predetermined wavelength.
15. back side illumination image sensor according to claim 1 or 2, it is characterised in that：The transparent conductive film (130)
Composition include tin indium oxide (ITO), zinc oxide (ZnO), doping zinc-oxide (doped ZnO), indium oxide (In2O3), tin oxide
(SnO2) etc..
16. back side illumination image sensor according to claim 1 or 2, it is characterised in that：The transparent conductive film (130)
Thickness be 10 nanometers to 500 nanometers.
17. back side illumination image sensor according to claim 1 or 2, it is characterised in that：The transparent conductive film (130)
Thickness be 80 nanometers.
18. back side illumination image sensor according to claim 14, it is characterised in that：The photoreceptor portion further includes it
Its counnter attack layer, these counnter attack layers are used together one or more with predetermined so as to selectively reduce with transparent conductive film
The reflection of the incident photon of wavelength.
19. back side illumination image sensor according to claim 1 or 2, it is characterised in that：The back side illumination image sensor
Circuit part include back surface passivation domain (14), the back surface passivation domain (14) is arranged in second with the first substrate (10)
On the first surface (20) of opposite the first substrate (10) in surface (60), and the back surface passivation domain (14) belongs to severe and mixes
Miscellaneous region, and with the doping with the first substrate (10) same type.
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| CN201820161716.3U CN207719212U (en) | 2018-01-30 | 2018-01-30 | Back side illumination image sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098203A (en) * | 2018-01-30 | 2019-08-06 | 维深半导体公司 | Back side illumination image sensor and its preparation |
| CN110211983A (en) * | 2019-06-14 | 2019-09-06 | 德淮半导体有限公司 | A kind of imaging sensor and preparation method thereof |
| CN110323236A (en) * | 2019-05-09 | 2019-10-11 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
-
2018
- 2018-01-30 CN CN201820161716.3U patent/CN207719212U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098203A (en) * | 2018-01-30 | 2019-08-06 | 维深半导体公司 | Back side illumination image sensor and its preparation |
| WO2019149022A1 (en) * | 2018-01-30 | 2019-08-08 | 维深半导体公司 | Back-lit image sensor and preparation thereof |
| US11810938B2 (en) | 2018-01-30 | 2023-11-07 | Visionary Semiconductor Inc. | Back-lit image sensor based on heterojunction and preparation thereof |
| CN110323236A (en) * | 2019-05-09 | 2019-10-11 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110211983A (en) * | 2019-06-14 | 2019-09-06 | 德淮半导体有限公司 | A kind of imaging sensor and preparation method thereof |
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