CN207705200U - Field-effect tube - Google Patents
Field-effect tube Download PDFInfo
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- CN207705200U CN207705200U CN201721693541.2U CN201721693541U CN207705200U CN 207705200 U CN207705200 U CN 207705200U CN 201721693541 U CN201721693541 U CN 201721693541U CN 207705200 U CN207705200 U CN 207705200U
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Abstract
The utility model is related to a kind of MOS field effect transistors, using vertical source electrode, drain and gate, stick together more carbon nanotubes side by side above as groove and form a three-dimensional fin formula field effect transistor device by carbon nanotube is aerial.The area of plane of substrate can be saved using vertical grid, technique line width can be accomplished minimum.By the aerial ballistic velocity that can improve carrier of carbon nanotube, current density can be improved using more carbon nanotubes, these designs can significantly improve the performance of field-effect transistor.By electrode design at the vertical area of plane that can effectively save substrate, the smaller that single field-effect transistor is done, extra small transistor can not only show quantum effect but also can put down more transistors on an equal amount of chip, more improve the performance of chip.Carbon nanotube is maked somebody a mere figurehead and is allowed to not contact with substrate, the ballistic velocity of carrier can be improved after aerial so that transistor has better performance.
Description
Technical field
The utility model is related to field-effect tube, the fin field effect more particularly to application carbon nanotube as conductive trench
Pipe and preparation method thereof.
Background technology
Current information age, integrated (IC) circuit play very important effect, it is electronic information technology development
Basis and core.The fast development of integrated circuit is mutual with the development of modern communications, computer, Internet and multimedia technology
Drive, greatly affect the every aspect lived now, wherein for IC circuits field-effect transistor have it is very important
Status.Field-effect transistor (Field Effect Transistor abbreviations (FET)) abbreviation field-effect tube, by most current-carrying
Son participates in conduction, also referred to as unipolar transistor, it belongs to voltage controlled semiconductor device.
Moore's Law is follow, the characteristic size of traditional integrated circuit silicon-based transistor constantly reduces, however by itself
The limitation of material property, minimum dimension have been approached the limit.With the continuous diminution of size, by the shadow of numerous non-ideal effects
It rings, the performance no longer equal proportion raising with the scaled down of its size of device.
For break through Conventional MOS transistors size limitation, scientist with carbon nanotube instead of traditional silicon materials come
Fieldtron is manufactured, existing carbon nanotube field-effect transistor is mostly the form of the single carbon pipe of two dimension.
Zhong Hanqing etc. is proposed and is had studied a kind of asymmetric Schottky contacts type single-walled carbon nanotube field-effect transistor
(SWNT-FET).In the SWNTFET of this asymmetric contact structures, metal and the carbon nanotube of two kinds of different work functions form Xiao
Te Ji is contacted.One end of carbon nanotube and the metallic aluminium (Al) of low work function form source electrode, the other end and high-work-function metal palladium
(Pd) drain electrode is formed.For drain terminal Pd/CNT, additional minus gate voltage can reduce barrier height, be conducive to the flowing of carrier, increase
High current.For source Al/CNT, additional positivity grid voltage reduces barrier height, is conducive to electron injection raceway groove, and electric current obtains
Enhancing.
Its performance still has the prodigious rising space.
Utility model content
Based on this, it is necessary in view of the above technical problems, provide a kind of field-effect tube, performance is more excellent.
A kind of field-effect tube, including：
Silicon base, the length of the silicon base is 450 nanometers to 600 nanometers, width is 250 nanometers to 350 nanometers and thick
75 nanometers to 125 nanometers of degree；
In the silicon base and the source electrode vertical with the silicon base, the height of the source electrode is 450 nanometers to 600
Nanometer, width are 250 nanometers to 350 nanometers and 75 nanometers to 125 nanometers of thickness, and the source electrode is made of metallic aluminium；
In the silicon base and the grid vertical with the silicon base, the height of the grid is 450 nanometers to 600
Nanometer, width are 250 nanometers to 350 nanometers and 75 nanometers to 125 nanometers of thickness, and the grid includes the metallic gold contacted with each other
Layer and silicon dioxide insulating layer are made, and the thickness of the metal layer gold is 4 to 6 nanometers；
In the silicon base and the drain electrode vertical with the silicon base, the height of the drain electrode is 450 nanometers to 600
Nanometer, width are 250 nanometers to 350 nanometers and 75 nanometers to 125 nanometers of thickness, and the drain electrode is made of Metal Palladium；And
With more carbon nanotubes parallel to each other of the source electrode, the silicon dioxide insulating layer and the drain contact,
The carbon nanotube is parallel with the silicon base, a carbon nanotube nearest from the silicon base in the more carbon nanotubes
It is more than or equal to 5 nanometers with a distance from the silicon base, the distance between described more carbon nanotubes are received more than or equal to 5
Rice；
Wherein, the grid is between the source electrode and the drain electrode；The distance between the grid and source electrode are more than
Or it is equal to 50 nanometers；The distance between the grid and drain electrode are more than or equal to 50 nanometers；The source electrode, the grid and
The length of the drain electrode, width and height are equal.
Above-mentioned field-effect tube has the following technical effects：
Vertical electrode structure：The source electrode of transistor, drain and gate are designed as to the three-dimensional structure of pillar；Such structure
The area of plane is saved, transistor size is reduced, the quantity for increasing transistor on chip so that performance is more preferable；
More carbon nanotube groove structures：Using more carbon nanotubes as conductive trench, is obtained with this and received than single carbon
The higher current density of mitron；
Carbon nanotube aerial construction：For traditional field-effect transistor, electronics can attract substrate table in transmission process
The positive charge in face, therefore the positive charge of substrate surface is moved in wave mode, substrate surface phonon polarizes and generates heat, affects field
The performance of effect transistor.And during electron-transport, since the positive charge with substrate surface attracts each other, transmission speed
Degree is affected, and reduces, and greatly affected its electron mobility, therefore the aerial trajectory speed that can improve carrier later
Degree, can polarize to avoid substrate surface phonon and its generation of heat, improvement electron mobility improve the performance of transistor；
Carbon nanotube is as conductive trench：For traditional mos field effect transistor, its electric current
Calculation isWherein μeffIndicate carrier mobility,Indicate length-width ratio, Cox(Vg-Vt) table
Show the quantity of electric charge in raceway groove, VdsIndicate source electrode and drain electrode both ends institute making alive.And field-effect of the carbon nanotube as conductive trench
Transistor, its Current calculation mode are Indicate source electrode, drain electrode two
Institute's making alive is held, indicates the movement velocity of carrier, contact position transmission is indicated, indicates the charge in raceway groove；It can be found that using carbon
The field-effect transistor that nanotube makees conductive trench can obtain higher electric current.
In other one embodiment, the length of the silicon base is 500 nanometers, width is 300 nanometers and thickness 100
Nanometer.
In other one embodiment, the height of the source electrode is 500 nanometers, length is that 300 nanometers and width 100 are received
Rice.
In other one embodiment, the height of the grid is 500 nanometers, length is that 300 nanometers and width 100 are received
Rice.
In other one embodiment, the height of the drain electrode is 500 nanometers, length is that 300 nanometers and width 100 are received
Rice.
In other one embodiment, the quantity of the carbon nanotube is 3 or 4 or 5.
In other one embodiment, the distance between described more carbon nanotubes are equal.
In other one embodiment, using e-beam induced deposition method in the more carbon nanotubes and the source
The contact portion of pole, the silicon dioxide insulating layer and the drain electrode carries out deposition and gets ready.
In other one embodiment, " using e-beam induced deposition method the more carbon nanotubes with it is described
The contact portion of source electrode, the silicon dioxide insulating layer and the drain electrode carry out deposition get ready " in e-beam induced deposition method it is quick-fried
The quantity of point is 1 either 2 or 3 or 4.
The preparation method of field-effect tube described in a kind of any of the above-described,
Make grid：Silicon nanowires is fixed by e-beam induced deposition method on a silicon substrate, silicon nanowires is aoxidized
To silicon dioxide insulating layer, then last layer metal layer gold is beaten on its surface with electron beam induced deposition；
Make source electrode：Resist coating on a silicon substrate is exposed using the first mask plate and is then developed, utilizes deposition
Method deposited metal aluminium carries out dissolving photoresist to photoresist lift off with acetone；
Make drain electrode：Resist coating on a silicon substrate is exposed using the second mask plate and is then developed, utilizes deposition
Method deposited metal palladium carries out dissolving photoresist to photoresist lift off with acetone；
More carbon nanotubes are assembled into the surface of the source electrode, the silicon dioxide insulating layer and the drain electrode.
In other one embodiment, using e-beam induced deposition method in the more carbon nanotubes and the source
The contact portion of pole, the silicon dioxide insulating layer and the drain electrode carries out deposition and gets ready.
In other one embodiment, " using e-beam induced deposition method the more carbon nanotubes with it is described
The contact portion of source electrode, the silicon dioxide insulating layer and the drain electrode carry out deposition get ready " in e-beam induced deposition method it is quick-fried
The quantity of point is 1 either 2 or 3 or 4.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of field-effect tube provided by the embodiments of the present application.
Fig. 2 is a kind of flow chart of the preparation method of field-effect tube provided by the embodiments of the present application.
Specific implementation mode
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only used to explain
The utility model is not used to limit the utility model.
Refering to fig. 1, a kind of field-effect tube, including：Silicon base 100, be set to the silicon base on and with the silicon substrate dolly
Straight source electrode 200, in the silicon base and the grid 300 vertical with the silicon base, be set in the silicon base and with
The vertical drain electrode 400 of the silicon base and with more of the source electrode, the silicon dioxide insulating layer and the drain contact mutually
Parallel carbon nanotube 500.
The length of the silicon base is 450 nanometers to 600 nanometers, width is 250 nanometers to 350 nanometers and 75 nanometers of thickness
To 125 nanometers.
The height of the source electrode is 450 nanometers to 600 nanometers, width is that 250 nanometers to 350 nanometers and 75 nanometers of thickness arrive
125 nanometers, the source electrode is made of metallic aluminium.
The height of the grid is 450 nanometers to 600 nanometers, width is that 250 nanometers to 350 nanometers and 75 nanometers of thickness arrive
125 nanometers, the grid includes that the metal layer gold 310 contacted with each other and silicon dioxide insulating layer 320 are made, the metal layer gold
Thickness be 4 to 6 nanometers.More preferably, the thickness of the metal layer gold is 5 nanometers.
The height of the drain electrode is 450 nanometers to 600 nanometers, width is that 250 nanometers to 350 nanometers and 75 nanometers of thickness arrive
125 nanometers, the drain electrode is made of Metal Palladium.
The carbon nanotube is parallel with the silicon base, one nearest from the silicon base in the more carbon nanotubes
Carbon nanotube with a distance from the silicon base be more than or equal to 5 nanometers, the distance between described more carbon nanotubes be more than or
Person is equal to 5 nanometers.
The grid is between the source electrode and the drain electrode.The distance between the grid and source electrode are more than or wait
In 50 nanometers.The distance between the grid and drain electrode are more than or equal to 50 nanometers.The source electrode, the grid and the leakage
The length of pole, width and height are equal.
Carbon nanotube is maked somebody a mere figurehead and is allowed to not contact with substrate, previously described field-effect transistor of crossing is joined by majority carrier
With conduction, the ballistic velocity of carrier can be improved after aerial so that transistor has better performance.
Above-mentioned field-effect tube has the following technical effects：
Vertical electrode structure：The source electrode of transistor, drain and gate are designed as to the three-dimensional structure of pillar；Such structure
The area of plane is saved, transistor size is reduced, the quantity for increasing transistor on chip so that performance is more preferable；
More carbon nanotube groove structures：Using more carbon nanotubes as conductive trench, is obtained with this and received than single carbon
The higher current density of mitron；
Carbon nanotube aerial construction：For traditional field-effect transistor, electronics can attract substrate table in transmission process
The positive charge in face, therefore the positive charge of substrate surface is moved in wave mode, substrate surface phonon polarizes and generates heat, affects field
The performance of effect transistor.And during electron-transport, since the positive charge with substrate surface attracts each other, transmission speed
Degree is affected, and reduces, and greatly affected its electron mobility, therefore the aerial trajectory speed that can improve carrier later
Degree, can polarize to avoid substrate surface phonon and its generation of heat, improvement electron mobility improve the performance of transistor；
Carbon nanotube is as conductive trench：For traditional mos field effect transistor, its electric current
Calculation is, wherein indicating carrier mobility, indicates length-width ratio, indicates the quantity of electric charge in raceway groove, indicates source electrode and drain electrode
Both ends institute making alive.And field-effect transistor of the carbon nanotube as conductive trench, its Current calculation mode are, indicate source
Pole, drain electrode both ends institute making alive, indicate the movement velocity of carrier, indicate contact position transmission, indicate the charge in raceway groove；It can be with
It was found that higher electric current can be obtained by making the field-effect transistor of conductive trench with carbon nanotube.
In other one embodiment, the length of the silicon base is 500 nanometers, width is 300 nanometers and thickness 100
Nanometer.
In other one embodiment, the height of the source electrode is 500 nanometers, length is that 300 nanometers and width 100 are received
Rice.
In other one embodiment, the height of the grid is 500 nanometers, length is that 300 nanometers and width 100 are received
Rice.
In other one embodiment, the height of the drain electrode is 500 nanometers, length is that 300 nanometers and width 100 are received
Rice.
In other one embodiment, the quantity of the carbon nanotube is 3 or 4 or 5.
In other one embodiment, the distance between described more carbon nanotubes are equal.
In other one embodiment, using e-beam induced deposition method in the more carbon nanotubes and the source
The contact portion of pole, the silicon dioxide insulating layer and the drain electrode carries out deposition and gets ready.
In other one embodiment, " using e-beam induced deposition method the more carbon nanotubes with it is described
The contact portion of source electrode, the silicon dioxide insulating layer and the drain electrode carry out deposition get ready " in e-beam induced deposition method it is quick-fried
The quantity of point 600 is 1 either 2 or 3 or 4.
Carbon nanotube and metal electrode measuring contact resistance when any two body surface contacts, necessarily lead to contact electricity
Resistance, it is mainly made of lumped resistance and film layer resistance two parts.Wherein, lumped resistance refers to that electric current passes through practical contact surface
When, the resistance of presentation due to electric current linear shrinkage (or concentration).When two articles contact, even if surface is very smooth, they it
Between contact be not under microcosmic yet entire surface contact, but the point contact on contact surface, practical contact surface size and object
Surface smooth degree and contact size refer to that pollution film at two articles surface interface contacts with each other in relation to film layer resistance
The resistance generated afterwards.There is no really clean metal surface in air, surface is either aoxidized or adsorbed gas is thin
Or the dust in film, deposition atmosphere, therefore under microcosmic, any contact surface is all pollution face.When electric current is by polluting face just
It will present film layer resistance.In actually measuring, lumped resistance and film layer resistance are not distinguish usually, but measure electric current stream
Cross the all-in resistance generated when two articles contact surface.The size of the two contact resistance mainly with carbon nanotube (CNT) is intermetallic connects
The work function (work function) of touch pressure and two kinds of materials is related.Contact is bigger, work function difference is smaller, between CNT and metal
Contact resistance with regard to smaller.
Deposition is carried out with gold electrode contact portion to get ready, increase with electron beam induced deposition (EBID) method to carbon nanotube
The contact force of CNT/ metals to increase effective contact area reduces contact resistance between the two.
It is a kind of flow chart of the preparation method of field-effect tube provided by the embodiments of the present application refering to Fig. 2.
The preparation method of field-effect tube described in a kind of any of the above-described,
S110, grid is made：Silicon nanowires is fixed by e-beam induced deposition method on a silicon substrate, to silicon nanowires oxygen
Change obtains silicon dioxide insulating layer, then beats last layer metal layer gold on its surface with electron beam induced deposition.
The high-precision (generating silicon dioxide insulating layer and metal layer gold) that Conventional processing methods are not achieved can be reached
S120, source electrode is made：Resist coating on a silicon substrate is exposed using the first mask plate and is then developed, profit
With deposition method metallic aluminium, dissolving photoresist is carried out to photoresist lift off with acetone.
S130, drain electrode is made：Resist coating on a silicon substrate is exposed using the second mask plate and is then developed, profit
With deposition method Metal Palladium, dissolving photoresist is carried out to photoresist lift off with acetone.
S140, the surface that more carbon nanotubes are assembled into the source electrode, the silicon dioxide insulating layer and the drain electrode.
In other one embodiment, using e-beam induced deposition method in the more carbon nanotubes and the source
The contact portion of pole, the silicon dioxide insulating layer and the drain electrode carries out deposition and gets ready.
In other one embodiment, " using e-beam induced deposition method the more carbon nanotubes with it is described
The contact portion of source electrode, the silicon dioxide insulating layer and the drain electrode carry out deposition get ready " in e-beam induced deposition method it is quick-fried
The quantity of point is 1 either 2 or 3 or 4.
It is appreciated that it is unlimited to make source electrode, grid and the sequence of drain electrode.
Specifically, single CNT is picked up from the CNT clusters tentatively disperseed by multioperation nano-machines hand first.By more
The root aligning electrodes surface of operation nano-machines hand control CNT simultaneously moves closer to, both under the action of Van der Waals force mutually
Absorption increases the contact force between CNT and metal electrode with electron beam induced deposition, increases its contact stabilization, and reduce
Contact resistance.Ultimately form the fin carbon nanotube field-effect transistor of 3 D stereo.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (9)
1. a kind of field-effect tube, which is characterized in that including：
Silicon base, the length of the silicon base is 450 nanometers to 600 nanometers, width is 250 nanometers to 350 nanometers and thickness 75
Nanometer is to 125 nanometers；
In the silicon base and the source electrode vertical with the silicon base, the height of the source electrode are 450 nanometers and are received to 600
Rice, width are 250 nanometers to 350 nanometers and 75 nanometers to 125 nanometers of thickness, and the source electrode is made of metallic aluminium；
In the silicon base and the grid vertical with the silicon base, the height of the grid are 450 nanometers and are received to 600
Rice, width are 250 nanometers to 350 nanometers and 75 nanometers to 125 nanometers of thickness, and the grid includes the metal layer gold contacted with each other
It is made with silicon dioxide insulating layer, the thickness of the metal layer gold is 4 to 6 nanometers；
In the silicon base and the drain electrode vertical with the silicon base, the height of the drain electrode are 450 nanometers and are received to 600
Rice, width are 250 nanometers to 350 nanometers and 75 nanometers to 125 nanometers of thickness, and the drain electrode is made of Metal Palladium；And
It is described with more carbon nanotubes parallel to each other of the source electrode, the silicon dioxide insulating layer and the drain contact
Carbon nanotube is parallel with the silicon base, and a carbon nanotube nearest from the silicon base is from institute in the more carbon nanotubes
The distance for stating silicon base is more than or equal to 5 nanometers, and the distance between described more carbon nanotubes are more than or equal to 5 nanometers；
Wherein, the grid is between the source electrode and the drain electrode；The distance between the grid and source electrode be more than or
Equal to 50 nanometers；The distance between the grid and drain electrode are more than or equal to 50 nanometers；The source electrode, the grid and described
The length of drain electrode, width and height are equal.
2. field-effect tube according to claim 1, which is characterized in that the length of the silicon base is 500 nanometers, width is
300 nanometers and 100 nanometers of thickness.
3. field-effect tube according to claim 1, which is characterized in that the height of the source electrode is 500 nanometers, length is
300 nanometers and 100 nanometers of width.
4. field-effect tube according to claim 1, which is characterized in that the height of the grid is 500 nanometers, length is
300 nanometers and 100 nanometers of width.
5. field-effect tube according to claim 1, which is characterized in that the height of the drain electrode is 500 nanometers, length is
300 nanometers and 100 nanometers of width.
6. field-effect tube according to claim 1, which is characterized in that the quantity of the carbon nanotube is 3 or 4 or 5
Root.
7. field-effect tube according to claim 1, which is characterized in that the distance between described more carbon nanotubes are equal.
8. field-effect tube according to claim 1, which is characterized in that using e-beam induced deposition method in the more carbon
The contact portion of nanotube and the source electrode, the silicon dioxide insulating layer and the drain electrode carries out deposition and gets ready.
9. field-effect tube according to claim 8, which is characterized in that " using e-beam induced deposition method described more
The contact portion of root carbon nanotube and the source electrode, the silicon dioxide insulating layer and the drain electrode carries out deposition and gets ready " in electricity
The quantity of beamlet induced deposition burst point is 1 either 2 or 3 or 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721693541.2U CN207705200U (en) | 2017-12-07 | 2017-12-07 | Field-effect tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721693541.2U CN207705200U (en) | 2017-12-07 | 2017-12-07 | Field-effect tube |
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| CN207705200U true CN207705200U (en) | 2018-08-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107819037A (en) * | 2017-12-07 | 2018-03-20 | 苏州大学 | Using the fin field effect pipe of CNT as conductive trench and preparation method thereof |
-
2017
- 2017-12-07 CN CN201721693541.2U patent/CN207705200U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107819037A (en) * | 2017-12-07 | 2018-03-20 | 苏州大学 | Using the fin field effect pipe of CNT as conductive trench and preparation method thereof |
| WO2019109376A1 (en) * | 2017-12-07 | 2019-06-13 | 苏州大学 | Fin field effect transistor using carbon nanotubes as conductive trenches and preparation method thereof |
| CN107819037B (en) * | 2017-12-07 | 2023-10-27 | 苏州大学 | Fin type field effect transistor using carbon nano tube as conductive groove and preparation method thereof |
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