CN207676945U - A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant - Google Patents
A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant Download PDFInfo
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- CN207676945U CN207676945U CN201721678741.0U CN201721678741U CN207676945U CN 207676945 U CN207676945 U CN 207676945U CN 201721678741 U CN201721678741 U CN 201721678741U CN 207676945 U CN207676945 U CN 207676945U
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- China
- Prior art keywords
- manganese cobalt
- cobalt nickel
- polyimides
- time constant
- temperature
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- KFDQGLPGKXUTMZ-UHFFFAOYSA-N [Mn].[Co].[Ni] Chemical compound [Mn].[Co].[Ni] KFDQGLPGKXUTMZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000004642 Polyimide Substances 0.000 claims abstract description 28
- 229920001721 polyimide Polymers 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010980 sapphire Substances 0.000 claims abstract description 20
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- 239000010931 gold Substances 0.000 claims abstract description 15
- 229920006335 epoxy glue Polymers 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 229920006332 epoxy adhesive Polymers 0.000 abstract 1
- 239000000463 material Substances 0.000 description 14
- 239000004952 Polyamide Substances 0.000 description 6
- 229920002647 polyamide Polymers 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- MZZUATUOLXMCEY-UHFFFAOYSA-N cobalt manganese Chemical compound [Mn].[Co] MZZUATUOLXMCEY-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005576 amination reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- Laminated Bodies (AREA)
Abstract
This patent discloses a kind of manganese cobalt nickel temperature-sensitive devices of controllable time constant, which is characterized in that device architecture is：There are polyimides, epoxy glue, manganese cobalt nickel, gold electrode successively on a sapphire substrate.Wherein the Sapphire Substrate is the sapphire of twin polishing, the polyimides is the polyimides of imidization, and thickness is 1~40 micron, and the manganese cobalt nickel is attached on polyimides by Wear Characteristics of Epoxy Adhesive, its thickness is 8~10 microns, and the gold electrode is located at manganese cobalt nickel surface both ends.This patent has following advantage：1, simple for process, easily implement.2, it can determine time constant by controlling polyimide thickness, can precisely meet the application demand of different time constant.
Description
Technical field
This patent is related to manganese cobalt nickel temperature-sensitive device technology, in particular to a kind of manganese cobalt nickel heat sensor of controllable time constant
Part.
Background technology
Non-brake method temperature-sensitive infrared detector is a kind of important infrared detector, has system compared to photon infrared detector
It is standby of low cost, it is not necessarily to low-temperature cooling system, wide-band response, use temperature range is wide, and device encapsulates the advantages that simple, temperature-sensitive
The variation that the resistance-temperature characteristics of device can make small temperature change be transformed into resistance forms big signal output, especially suitable
For high-acruracy survey, manganese cobalt nickel is as a kind of all band temperature-sensitive radiation detector material, and in military affairs, civilian and industrial circle has
It and is widely applied.
In thermosensitive resistance infrared detector, unquestionably, the big material of temperature-coefficient of electrical resistance should be chosen and do reception member
Part, however signal magnitude is also related with the temperature difference that heat radiation can establish on element, when thermal time constant also referred to as responds
Between, it characterizes the temperature of temperature-sensitive element with the speed characteristics of variation of ambient temperature.I.e. in defined medium, when environment temperature is sent out
When raw mutation, the temperature-sensitive element temperature change 63.2% required time of the first and last temperature difference.The size and element of time constant
Radiator structure have direct relation.This patent is to prepare a kind of manganese cobalt nickel temperature-sensitive device, using polyimides as manganese cobalt nickel with
Supporting layer between substrate can determine the time constant of manganese cobalt nickel temperature-sensitive device by controlling polyimide thickness.
Invention content
The purpose of this patent is to provide a kind of manganese cobalt nickel temperature-sensitive device of controllable time constant, can be sub- by controlling polyamides
Amine thickness meets the requirement that different detected objects need the different response times.
In manganese cobalt nickel thermistor detector, since manganese cobalt nickel thin slice is made thin, thermal diffusion transversely can be ignored,
Heat is mainly conducted along substrate, and bigger than space radiation heat transfer is more.As for heat loss through convection, as long as vacuum is extracted into a certain degree
It can ignore.Therefore heat transfer of the device along substrate direction has played decisive action.According to temperature-sensitive device time constant formula
K0It is the thermal conductivity along substrate direction, K0Size and thermal foil thermal conductivity K1, the thermal conductivity K of epoxy glue2, polyamides Asia
The thermal conductivity K of amine3, the thermal conductivity K of Sapphire Substrate4It is related.
It is defined according to thermal conductivity
K is material thermal conductivity, and A is the sectional area for transmitting heat, and d is the length that heat is conducted through.For actual heat
Quick element, A are exactly element area.Control thermal conductivity K0Numerical value there are two types of method, first, materials different selection thermal conductivity k,
The other is changing the thickness of material.Here we are using the thick polyimide between control manganese cobalt nickel material and Sapphire Substrate
It spends to realize.
A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant of this patent, as indicated at 4, which is characterized in that device architecture
For：There are polyimides 2, epoxy glue 3, manganese cobalt nickel 4, gold electrode 5 successively in Sapphire Substrate 1.The wherein described sapphire lining
Bottom 1 is the sapphire of twin polishing, and the polyimides 2 is the polyimides of imidization, and thickness is 1~40 micron, described
Manganese cobalt nickel 4 be to be pasted on polyimides 2 by epoxy glue 3, thickness be 8~10 microns, the gold electrode 5 be positioned at
The gold electrode that two thickness at manganese cobalt nickel surface both ends are 8000~10000 angstroms.
The manganese cobalt nickel temperature-sensitive device of described a kind of controllable time constant, it is characterised in that method and step is as follows：
1, by 1 surface spin coating of Sapphire Substrate, one strata acid imide 2 and imidization.
2, structure manganese cobalt nickel material clean as shown in Figure 2 is waited for into patch.
3, manganese cobalt nickel material 4 is pasted onto 2 surface of polyimides by epoxy glue 3 and cured.
Sacrificial substrate 7 and silicon dioxide sacrificial layer 6 are scratched, and are immersed in hydrofluoric acid by 4, photoetching scribe line
It is removed in buffer solution.
5, photoetching electrode pattern prepares two gold electrodes 5 on manganese cobalt nickel surface.
6, finally through over etching, scribing.Just obtain manganese cobalt nickel temperature-sensitive device.
This patent has following advantage：
1, simple for process, easily implement.
2, it can determine time constant by controlling polyimide thickness, can precisely meet the application of different time constant
Demand.
Description of the drawings
Fig. 1 is that polyimide substrate cuts open figure, and wherein label declaration is as follows：(1) Sapphire Substrate；(2) polyimides；
Fig. 2 is manganese cobalt nickel material profile figure, and wherein label declaration is as follows：(4) manganese cobalt nickel；(6) sacrificial layer；(7) lining is sacrificed
Bottom；
Fig. 3 is sectional view after polyimides is pasted with manganese cobalt nickel, and wherein label declaration is as follows：(1) Sapphire Substrate；(2)
Polyimides (3) epoxy glue；(4) manganese cobalt nickel；(6) sacrificial layer；(7) gold electrode；
Fig. 4 is sectional view after temperature-sensitive device molding, and wherein label declaration is as follows：(1) Sapphire Substrate；(2) polyimides；
(3) epoxy glue；(4) manganese cobalt nickel；(5) gold electrode；
Fig. 5 is polyimide thickness and time constant relational graph.
Specific implementation mode
Specific implementation of the patent mode is further described below in conjunction with the accompanying drawings：
We are prepared for the manganese cobalt nickel temperature-sensitive device of tri- kinds of different time constants of ABC, and structural parameters are respectively：A：
280um Sapphire Substrates, 1 micrometer polyamide, 1 micron of epoxy glue, 8 microns of manganese cobalt nickels, 8000 angstroms of gold electrodes；
B：280um Sapphire Substrates, 20 micrometer polyamides, 1 micron of epoxy glue, 9 microns of manganese cobalt nickels, 9000 angstroms of gold electricity
Pole；
C：280um Sapphire Substrates, 40 micrometer polyamides, 1 micron of epoxy glue, 10 microns of manganese cobalt nickels, 10000 angstroms of gold electricity
Pole；
Device preparation method is as follows：
1, prepared by substrate：Polyimides 2 is uniformly spun in Sapphire Substrate 1 by sol evenning machine, spin coating condition is：
500 revs/min of initial velocity 5 seconds；1500 revs/min 30 seconds at a high speed.Spin coating is put into baking oven progress imidization after reuniting acid imide 2, sub-
Amination temperature is followed successively by：80℃：1 hour；120℃：1 hour；180℃：1 hour；300℃：5 hours；The purpose of low-temperature bake is
In order to allow most of solvent to volatilize, if initial temperature is excessively high, the solvent by near surface is quickly run away, and the solvent of the inside will be by
It seals and generates bubble.So avoiding generating bubble here by the way of step-up temperature.It is sub- that polyamides is measured after the completion of imidization
Amine thickness.If thickness miss the mark thickness repeats spin coating until polyimides lowest point thickness is more than target thickness.It will
2 grinding and polishing of polyimides is to required target thickness, as shown in Figure 1.
2, material prepares：Selecting structure 4 material of manganese cobalt nickel as shown in Figure 2 simultaneously cleans up, and waits for patch, wherein sacrificial layer
Material be silica, the material of sacrificial substrate is sapphire.
3, patch：Manganese cobalt nickel 4 is pasted into 2 surface of polyimides by epoxy glue 3 and high temperature tabletting cures, such as Fig. 3 institutes
Show.
4, substrate desquamation：Photoetching scribe line controls blade depths, sacrificial substrate 7 and sacrificial layer 6 is scratched.Again by device
Part buffered hydrofluoric acid solution impregnates until sacrificial layer 6 is corroded, and such purpose is to shell sacrificial substrate 7 from manganese cobalt nickel 4
From getting off.
5, device formation：The material for exposing manganese cobalt nickel 4 will have been removed to carry out photoetching and two gold electrodes are prepared on its surface
5, then device is etched and is molded, transfer scribing.Manganese cobalt nickel temperature-sensitive device is thus obtained, as shown in Figure 4.
Claims (1)
1. a kind of manganese cobalt nickel temperature-sensitive device of controllable time constant, which is characterized in that device architecture is：In Sapphire Substrate
(1) there are polyimides (2), epoxy glue (3), manganese cobalt nickel (4), gold electrode (5) on successively；The wherein Sapphire Substrate (1)
For the sapphire of twin polishing, the polyimides (2) is the polyimides of imidization, and thickness is 1~40 micron, described
Manganese cobalt nickel (4) is pasted on polyimides (2) by epoxy glue (3), and thickness is 8~10 microns, the gold electrode (5)
The gold electrode for being 8000~10000 angstroms for two thickness positioned at manganese cobalt nickel surface both ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721678741.0U CN207676945U (en) | 2017-12-06 | 2017-12-06 | A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721678741.0U CN207676945U (en) | 2017-12-06 | 2017-12-06 | A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207676945U true CN207676945U (en) | 2018-07-31 |
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| CN201721678741.0U Active CN207676945U (en) | 2017-12-06 | 2017-12-06 | A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107978670A (en) * | 2017-12-06 | 2018-05-01 | 中国科学院上海技术物理研究所 | A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant and preparation method thereof |
-
2017
- 2017-12-06 CN CN201721678741.0U patent/CN207676945U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107978670A (en) * | 2017-12-06 | 2018-05-01 | 中国科学院上海技术物理研究所 | A kind of manganese cobalt nickel temperature-sensitive device of controllable time constant and preparation method thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231229 Address after: 200083, 2nd Floor, Building 4, No. 860 Dongtiyuhui Road, Hongkou District, Shanghai Patentee after: Shanghai Harveck Optoelectronic Technology Co.,Ltd. Address before: 200083 No. 500, Yutian Road, Shanghai, Hongkou District Patentee before: SHANGHAI INSTITUTE OF TECHNICAL PHYSICS, CHINESE ACADEMY OF SCIENCE |