CN207649820U - High-precision MEMS gas pressure Sensitive Apparatuses - Google Patents
High-precision MEMS gas pressure Sensitive Apparatuses Download PDFInfo
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- CN207649820U CN207649820U CN201721667021.4U CN201721667021U CN207649820U CN 207649820 U CN207649820 U CN 207649820U CN 201721667021 U CN201721667021 U CN 201721667021U CN 207649820 U CN207649820 U CN 207649820U
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Abstract
The utility model discloses a kind of high-precision MEMS gas pressure Sensitive Apparatuses, including substrate, upper capacitor plate, lower capacitor plate, top crown top electrode and bottom crown top electrode, the top crown conductive layer is made of electrode under the top crown conductive bar and top crown that conduct, the bottom crown conductive layer is made of electrode under the bottom crown conductive bar and bottom crown that conduct, and the lower capacitor plate is electrically connected with bottom crown conductive layer；Si3N4 heat insulating laminas are provided with top crown conductive column through-hole, upper pole through-hole and lower pole through-hole, one top crown conductive column lower end is located at top crown conductive column upper end in top crown conductive column through-hole and is connect with upper capacitor plate, and the top crown top electrode is covered in pole via bottoms and side wall and is in electrical contact with electrode under top crown.The utility model MEMS gas pressure sensing elements have higher measurement accuracy and lower power consumption, mechanical structure stability good, and its is small, at low cost.
Description
Technical field
The present invention relates to MEMS（Micro Electro Mechanical System, MEMS）Technical field, it is special
It is not related to a kind of high-precision MEMS gas pressure Sensitive Apparatuses.
Background technology
Relative to traditional mechanical pick-up device, the smaller of MEMS pressure sensor, control accuracy higher, manufacture craft
With silicon semiconductor technical compatibility, thus cost performance increases substantially.The pressure sensor made based on MEMS technology has been answered extensively
For all trades and professions such as medical treatment, chemical industry, electronics.For example, the tire gauge in medical field, sphygmomanometer, health scale etc.；Industrial circle
In digital pressure gauge, digital stream scale etc.；The engine oil pressure sensor of vehicle electric field, brake system air pressure
Force snesor, the pressure sensor of tire pressure monitoring system, engine air inlet tube pressure sensor, seat comfort degree sensor, side
Face crash sensor etc..With the continuous development of science and technology being constantly progressive with economic level, MEMS pressure sensor application
Field it is more and more wider, have become a kind of indispensable electronic component of microelectronic industry at present.
Invention content
The present invention provides a kind of high-precision MEMS gas pressure Sensitive Apparatuses, this high-precision MEMS gas pressure Sensitive Apparatuses
It is good with higher measurement accuracy and lower power consumption, mechanical structure stability, and its is small, it is at low cost, with silicon semiconductor
Manufacturing process is compatible with.
In order to achieve the above objectives, the technical solution adopted by the present invention is：A kind of high-precision MEMS gas pressure Sensitive Apparatuses,
Including substrate, upper capacitor plate, lower capacitor plate, top crown top electrode and bottom crown top electrode, have on the substrate
One SiO2 insulating layers, this SiO2 insulating layers upper surface have the lower capacitor plate and be spaced apart top crown conductive layer,
Bottom crown conductive layer, the top crown conductive layer is made of electrode under the top crown conductive bar and top crown that conduct, under described
Pole plate conductive layer is made of electrode under the bottom crown conductive bar and bottom crown that conduct, and the lower capacitor plate is led with bottom crown
Electric layer is electrically connected；
One Si3N4 heat insulating laminas are covered in top crown conductive layer, lower capacitor plate, bottom crown conductive layer respectively surface,
The upper capacitor plate is located at Si3N4Above heat insulating lamina, and the fringe region of upper capacitor plate and Si3N4 heat insulating laminas
Between be positioned apart from several top crown support columns, to pole plate on the capacitor with positioned at lower capacitor plate surface
Si3N4 heat insulating laminas form a cavity between region；
The Si3N4 heat insulating laminas are provided with top crown conductive column through-hole, upper pole through-hole and lower pole through-hole, and a top crown is conductive
Column lower end is located at top crown conductive column upper end in top crown conductive column through-hole and is connect with upper capacitor plate, and the top crown powers on
Pole is covered in pole via bottoms and side wall and is in electrical contact with electrode under top crown, and top crown top electrode is extended to positioned at upper pole
The Si3N4 heat insulating laminas region of bore periphery, the bottom crown top electrode be covered in lower pole via bottoms and side wall and with lower pole
Electrode is in electrical contact under plate, and bottom crown top electrode is extended to positioned at the Si3N4 heat insulating laminas region of lower pole bore periphery, a sealing
Ring coats top crown support column and is located at upper capacitor plate marginal zone and Si3N4Between heat insulating lamina.
Further improved technology scheme is as follows in above-mentioned technical proposal：
1. in said program, the top crown conductive column through-hole is between top crown conductive layer and lower capacitor plate
Gap in.
2. in said program, the upper capacitor plate, lower capacitor plate, top crown top electrode and bottom crown power on
Pole material is metal, DOPOS doped polycrystalline silicon or undoped gallium arsenide.
3. in said program, the substrate is silicon substrate, glass substrate, germanium substrate or gallium arsenide substrate.
4. in said program, the upper capacitor plate, lower capacitor plate, top crown top electrode and bottom crown power on
Pole is obtained using sputtering or electroplating technology.
5. in said program, the SiO2 insulating layers and Si3N4Heat insulating lamina is prepared using CVD or LPCVD methods.
6. in said program, the SiO2 insulating layers and Si3N4Heat insulating lamina is prepared using CVD or LPCVD methods.
Since above-mentioned technical proposal is used, the present invention has following advantages compared with prior art：
High-precision MEMS gas pressure Sensitive Apparatuses of the present invention, when the pressure and element internal cavities of extraneous surveyed gas
When reference pressure forms pressure difference so that a pole plate of capacitor deforms upon, and then converts the change of capacitance to voltage
Signal exports, which has higher precision and lower power consumption, small, at low cost, manufacture craft
Simply and with silicon semiconductor process compatible, it can be achieved that extensive generate.
Description of the drawings
Fig. 1 is the three-dimensional structure figure of high-precision MEMS gas pressure Sensitive Apparatuses of the present invention；
Fig. 2 is the vertical semi-cutaway of high-precision MEMS gas pressure Sensitive Apparatuses of the present invention；
The process flow chart of Fig. 3 ~ 9 high-precision MEMS gas pressure Sensitive Apparatuses of the present invention.
In the figures above：1, substrate；2、SiO2Insulating layer；3、Si3N4Heat insulating lamina；4, LTO sealing rings；5, on capacitor
Pole plate；5a, top crown top electrode；Electrode under 5b, top crown；5c, top crown conductive bar；5d, top crown conductive column；5e, upper pole
Plate support column；6, lower capacitor plate；6a, bottom crown top electrode；Electrode under 6b, bottom crown；6c, bottom crown conductive bar；7、
BPSG sacrificial layers；7a, top crown support column through-hole；7b, top crown conductive column through-hole；8, cavity；9, top crown conductive layer；10、
Bottom crown conductive layer.
Specific implementation mode
The invention will be further described with reference to the accompanying drawings and embodiments：
Embodiment 1：A kind of high-precision MEMS gas pressure Sensitive Apparatuses, including substrate 1, upper capacitor plate 5, capacitor
Bottom crown 6, top crown top electrode 5a and bottom crown top electrode 6a have on the substrate 1 a SiO2 insulating layers 2, this SiO2 exhausted
Top crown conductive layer 9, the bottom crown conductive layer 10 that 2 upper surface of edge layer has the lower capacitor plate 6 and is spaced apart, it is described
Top crown conductive layer 9 is made of electrode 5b under the top crown conductive bar 5c and top crown that conduct, the bottom crown conductive layer 10
It is made of electrode 6b under the bottom crown conductive bar 6c and bottom crown that conduct, the lower capacitor plate 6 and bottom crown conductive layer
10 electrical connections；
It is respective that one Si3N4 heat insulating laminas 3 are covered in top crown conductive layer 9, lower capacitor plate 6, bottom crown conductive layer 10
Surface, the upper capacitor plate 5 are located at Si3N43 top of heat insulating lamina, and the fringe region and Si3N4 of upper capacitor plate 5
Several top crowns support column 5e has been positioned apart between heat insulating lamina 3, to pole plate 5 on the capacitor be located at capacitor
A cavity 8 is formed between 3 region of Si3N4 heat insulating laminas on 6 surface of bottom crown；
The Si3N4 heat insulating laminas 3 are provided with top crown conductive column through-hole 7b, upper pole through-hole and lower pole through-hole, a top crown
The lower ends conductive column 5d are located at the top crown upper ends conductive column 5d in top crown conductive column through-hole 7b and are connect with upper capacitor plate 5, institute
It states top crown top electrode 5a to be covered in pole via bottoms and side wall and be in electrical contact with electrode 5b under top crown, and top crown powers on
Pole 5a is extended to positioned at 3 region of Si3N4 heat insulating laminas of upper pole bore periphery, and the bottom crown top electrode 6a is covered in lower extremely logical
Hole bottom and side wall is simultaneously in electrical contact with electrode 6b under bottom crown, and bottom crown top electrode 6a is extended to positioned at lower pole bore periphery
3 region of Si3N4 heat insulating laminas, a sealing ring 4 coat top crown support column 5e and are located at 5 marginal zone of upper capacitor plate and Si3N4
Between heat insulating lamina 3.
Above-mentioned top crown conductive column through-hole 7b is in the gap between top crown conductive layer 9 and lower capacitor plate 6.
Above-mentioned upper capacitor plate 5, lower capacitor plate 6, top crown top electrode 5a and bottom crown top electrode 6a materials are
Metal.
Above-mentioned substrate 1 is silicon substrate bottom；Above-mentioned upper capacitor plate 5, lower capacitor plate 6, top crown top electrode 5a and
Bottom crown top electrode 6a is obtained using electroplating technology.
Above-mentioned SiO2 insulating layers 2 and Si3N4Heat insulating lamina 3 is prepared using CVD method.
Above-mentioned SiO2 insulating layers 2 and Si3N4Heat insulating lamina 3 is prepared using CVD method.
Embodiment 2：A kind of high-precision MEMS gas pressure Sensitive Apparatuses, including substrate 1, upper capacitor plate 5, capacitor
Bottom crown 6, top crown top electrode 5a and bottom crown top electrode 6a have on the substrate 1 a SiO2 insulating layers 2, this SiO2 exhausted
Top crown conductive layer 9, the bottom crown conductive layer 10 that 2 upper surface of edge layer has the lower capacitor plate 6 and is spaced apart, it is described
Top crown conductive layer 9 is made of electrode 5b under the top crown conductive bar 5c and top crown that conduct, the bottom crown conductive layer 10
It is made of electrode 6b under the bottom crown conductive bar 6c and bottom crown that conduct, the lower capacitor plate 6 and bottom crown conductive layer
10 electrical connections；
It is respective that one Si3N4 heat insulating laminas 3 are covered in top crown conductive layer 9, lower capacitor plate 6, bottom crown conductive layer 10
Surface, the upper capacitor plate 5 are located at Si3N43 top of heat insulating lamina, and the fringe region and Si3N4 of upper capacitor plate 5
Several top crowns support column 5e has been positioned apart between heat insulating lamina 3, to pole plate 5 on the capacitor be located at capacitor
A cavity 8 is formed between 3 region of Si3N4 heat insulating laminas on 6 surface of bottom crown；
The Si3N4 heat insulating laminas 3 are provided with top crown conductive column through-hole 7b, upper pole through-hole and lower pole through-hole, a top crown
The lower ends conductive column 5d are located at the top crown upper ends conductive column 5d in top crown conductive column through-hole 7b and are connect with upper capacitor plate 5, institute
It states top crown top electrode 5a to be covered in pole via bottoms and side wall and be in electrical contact with electrode 5b under top crown, and top crown powers on
Pole 5a is extended to positioned at 3 region of Si3N4 heat insulating laminas of upper pole bore periphery, and the bottom crown top electrode 6a is covered in lower extremely logical
Hole bottom and side wall is simultaneously in electrical contact with electrode 6b under bottom crown, and bottom crown top electrode 6a is extended to positioned at lower pole bore periphery
3 region of Si3N4 heat insulating laminas, a sealing ring 4 coat top crown support column 5e and are located at 5 marginal zone of upper capacitor plate and Si3N4
Between heat insulating lamina 3.
Above-mentioned upper capacitor plate 5, lower capacitor plate 6, top crown top electrode 5a and bottom crown top electrode 6a materials are
DOPOS doped polycrystalline silicon.
Above-mentioned substrate 1 is germanium substrate；Above-mentioned upper capacitor plate 5, lower capacitor plate 6, top crown top electrode 5a and under
Pole plate top electrode 6a is obtained using sputtering technology.
Above-mentioned SiO2 insulating layers 2 and Si3N4Heat insulating lamina 3 is prepared using LPCVD methods.
Above-mentioned SiO2 insulating layers 2 and Si3N4Heat insulating lamina 3 is prepared using LPCVD methods.
The MEMS gas pressures sensing element of above-described embodiment is further illustrated as follows：Agent structure includes one group of disc
Upper capacitor plate 5 and lower capacitor plate 6, and in one circular LTO sealing ring 4 of the edge ring set of upper and lower pole plate,
The effect of sealing ring is so that the cavity 8 between upper and lower pole plate seals, and is allowed to keep the reference pressure of a fixed numbers.
The lower capacitor plate 6 is located at the upper surface that 1 surface high-temp of Si substrates aoxidizes the SiO2 insulating layers 2 to be formed, and in capacitor
The side covering Si3N4 heat insulating laminas 3 of 6 face upper capacitor plate 5 of bottom crown, Si3N4 heat insulating laminas 3 and top crown it
Between be to maintain the sealing cavity 8 of certain Reference pressure.The effect of Si3N4 heat insulating laminas 3 is：When ambient pressure is higher than the ginseng of cavity
When examining air pressure, under pressure to lower recess, the presence of Si3N4 heat insulating laminas can prevent on capacitor upper capacitor plate 5
Pole plate 5 touches the short circuit phenomenon of the formation of lower capacitor plate 6.
When the MEMS gas pressure sensing elements are placed under test gas, ambient atmos and element internal cavities 8 are deposited
In pressure difference, the circumferential edges of upper capacitor plate 5 are clamped motionless but overhead middle section will produce under force
The deformation heaved or be recessed so that capacitance variation.For the capacitance for measuring on capacitor between bottom crown, pole on the capacitor
Plate 5 passes sequentially through conductive column 5d, conductive bar 5c, lower electrode 5b and top electrode 5a；Lower capacitor plate 6 passes sequentially through conductive bar
6c, lower electrode 6b and top electrode 6a.A pair of of the top electrode 5a and 6a for being under the jurisdiction of the upper and lower pole plate of capacitor is exposed to entire sensitive member
The upper surface of part, welding lead is connect with outer signal modulate circuit when being encapsulated in order to the later stage.The deformation of upper capacitor plate 5
Caused capacitance variation, is amplified by signal conditioning circuit, to realize the transformation between ambient atmos pressure and electric signal.
A kind of manufacturing process being used to prepare above-mentioned MEMS gas pressure sensing elements, includes the following steps：
Step 1: as shown in figure 3, in 1 surface high-temp oxidation growth of Si substrates, one layer of SiO2Insulating layer 2, for Si to be isolated
Substrate and element；
Step 2: as shown in figure 4, in SiO2One layer of Cu film is sputtered on insulating layer 2, thickness is 0.5 μm, resist coating,
Through exposure and development, etching forms lower capacitor plate 6, bottom crown conductive bar 6c, electrode 6b under bottom crown, electrode under top crown
5b, top crown conductive bar 5c；
Step 3: as shown in figure 5, use LPCVD methods grow a layer thickness for 0.2 μm Si3N4 be isolated thin layer 3, and
Si3N4 layers are etched away in corresponding position and forms windows to expose electrode 6b under bottom crown, and electrode 5b and top crown are led under top crown
Electricity 5c, Si3N4The effect of heat insulating lamina be prevent upper capacitor plate gas pressure effect under deformation contacted with bottom crown and
Short circuit；
Step 4: as shown in fig. 6, the BPSG sacrificial layers 7 that coating a layer thickness is 1 μm, etch four top crown supports
Column through-hole 7a（Attached drawing 6 is vertical semi-cutaway, only shows 2 through-holes）With 1 top crown conductive column through-hole 7b；Wherein top crown
Support column through-hole 7a, which is etched to, exposes Si3N4 isolation thin layers 3, and top crown conductive column through-hole 7b is etched to and exposes top crown conduction
5c；
Step 5: as shown in fig. 7, one layer of Cu film is electroplated on BPSG sacrificial layers 7, thickness is 0.5 μm, and is etched
The upper capacitor plate 5 of disc-shaped；
Step 6: as shown in figure 8, after removal BPSG sacrificial layers 7, four top crown support column 5e and 1 upper pole are shown
Plate conductive column 5d.The effect of four support columns is that support top crown edge makes the overhead structure in the clamped centre of circumference, this
There are gap between outer four support columns, sacrificial layer removal liquid is readily permeable to enter and gets rid of the sacrificial layer below top crown,
So that forming cavity structure between pole plate 5 and Si3N4 heat insulating laminas 3 on the capacitor；
Step 7: as shown in figure 9, the LTO layers of 2 μ m thicks are coated with, by techniques such as exposure, development, etchings in capacitance
Device top crown 5 circumference ring set, one LTO sealing ring, the effect of sealing ring are so that between top crown 5 and Si3N4 heat insulating laminas 3
Cavity 8 seal and be allowed to keep the reference pressure of a fixed numbers；
Step 8: sputtering the Cu films that thickness is 0.5 μm on the window of Si3N4 heat insulating laminas 3 and etching top crown
Top electrode 5a and bottom crown top electrode 6a is to get to the MEMS gas pressure sensing elements belonging to the present invention.As shown in Fig. 2, this
Sample, lower capacitor plate 6 pass sequentially through electrode 6b under bottom crown conductive bar 6c, bottom crown, bottom crown top electrode 6a, and capacitance
Device top crown 5 passes sequentially through electrode 5b, top crown top electrode 5a under top crown conductive column 5d, top crown conductive bar 5c, top crown,
Finally lead is drawn to outer signal modulate circuit from two top electrodes.
When using above-mentioned high-precision MEMS gas pressure Sensitive Apparatuses, inside the pressure and element of extraneous surveyed gas
When the reference pressure of cavity forms pressure difference so that a pole plate of capacitor deforms upon, and then the change of capacitance is converted
It is exported for voltage signal, which has higher precision and lower power consumption, small, at low cost, system
Make it is simple for process and also with silicon semiconductor process compatible, it can be achieved that extensive generate.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (6)
1. a kind of high-precision MEMS gas pressure Sensitive Apparatuses, it is characterised in that：Including substrate（1）, upper capacitor plate（5）、
Lower capacitor plate（6）, top crown top electrode（5a）With bottom crown top electrode（6a）, the substrate（1）It is upper to have a SiO2 exhausted
Edge layer（2）, this SiO2 insulating layer（2）Upper surface has the lower capacitor plate（6）With the top crown conductive layer being spaced apart
（9）, bottom crown conductive layer（10）, the top crown conductive layer（9）By the top crown conductive bar conducted（5c）Under top crown
Electrode（5b）Composition, the bottom crown conductive layer（10）By the bottom crown conductive bar conducted（6c）With electrode under bottom crown（6b）
Composition, the lower capacitor plate（6）With bottom crown conductive layer（10）Electrical connection；
One Si3N4 heat insulating laminas（3）It is covered in top crown conductive layer（9）, lower capacitor plate（6）, bottom crown conductive layer（10）
Respective surface, the upper capacitor plate（5）Positioned at Si3N4Heat insulating lamina（3）Top, and upper capacitor plate（5）Marginal zone
Domain and Si3N4 heat insulating laminas（3）Between be positioned apart from several top crown support columns（5e）, thus pole plate on the capacitor
（5）With positioned at lower capacitor plate（6）The Si3N4 heat insulating laminas on surface（3）A cavity is formed between region（8）；
The Si3N4 heat insulating laminas（3）It is provided with top crown conductive column through-hole（7b）, upper pole through-hole and lower pole through-hole, a top crown
Conductive column（5d）Lower end is located at top crown conductive column through-hole（7b）Interior top crown conductive column（5d）Upper end and upper capacitor plate（5）
Connection, the top crown top electrode（5a）Be covered in pole via bottoms and side wall and with electrode under top crown（5b）Electrical contact,
And top crown top electrode（5a）Extend to the Si3N4 heat insulating laminas positioned at upper pole bore periphery（3）Region, the bottom crown power on
Pole（6a）Be covered in lower pole via bottoms and side wall and with electrode under bottom crown（6b）Electrical contact, and bottom crown top electrode（6a）Prolong
Extend to the Si3N4 heat insulating laminas positioned at lower pole bore periphery（3）Region, a sealing ring（4）Coat top crown support column（5e）And
Positioned at upper capacitor plate（5）Marginal zone and Si3N4Heat insulating lamina（3）Between.
2. high-precision MEMS gas pressure Sensitive Apparatuses according to claim 1, it is characterised in that：The top crown is conductive
Column through-hole（7b）Positioned at top crown conductive layer（9）With lower capacitor plate（6）Between gap in.
3. high-precision MEMS gas pressure Sensitive Apparatuses according to claim 1, it is characterised in that：Pole on the capacitor
Plate（5）, lower capacitor plate（6）, top crown top electrode（5a）With bottom crown top electrode（6a）Material is metal, DOPOS doped polycrystalline silicon
Or undoped gallium arsenide.
4. high-precision MEMS gas pressure Sensitive Apparatuses according to claim 1, it is characterised in that：The substrate（1）For
Silicon substrate, glass substrate, germanium substrate or gallium arsenide substrate.
5. high-precision MEMS gas pressure Sensitive Apparatuses according to claim 1, it is characterised in that：The SiO2 insulating layers
（2）And Si3N4Heat insulating lamina（3）It is prepared using CVD or LPCVD methods.
6. high-precision MEMS gas pressure Sensitive Apparatuses according to claim 1, it is characterised in that：Pole on the capacitor
Plate（5）, lower capacitor plate（6）, top crown top electrode（5a）With bottom crown top electrode（6a）Using sputtering or electroplating technology
It obtains.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107830966A (en) * | 2017-12-05 | 2018-03-23 | 苏州科技大学 | MEMS gas pressures sensing element and its manufacturing process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107830966A (en) * | 2017-12-05 | 2018-03-23 | 苏州科技大学 | MEMS gas pressures sensing element and its manufacturing process |
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Granted publication date: 20180724 Termination date: 20191205 |