CN207624696U - ESD protection device - Google Patents
ESD protection device Download PDFInfo
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- CN207624696U CN207624696U CN201721674156.3U CN201721674156U CN207624696U CN 207624696 U CN207624696 U CN 207624696U CN 201721674156 U CN201721674156 U CN 201721674156U CN 207624696 U CN207624696 U CN 207624696U
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Abstract
The utility model is related to Esd protection devices, reduce the resistance when conducting of the Esd protection device of diode-type.Esd protection device (10) has semiconductor substrate (20), esd protection circuit portion (345) and ungrounded conductor (90).Esd protection circuit portion (345) is formed in the first main surface side of semiconductor substrate (20), including diode D1, D2.Diode D1 and diode D2 is realized by the PN junction that the thickness direction along esd protection circuit portion (345) is formed, and is connected via semiconductor substrate (20).Ungrounded conductor (90) is formed in the second interarea of semiconductor substrate (20).Ungrounded conductor (90) includes at least part in the region between diode D1 and diode D2 in the vertical view of semiconductor substrate (20), and Chong Die at least part of diode D1 or diode D2.
Description
Technical field
The Esd protection device that the utility model is related to be formed using thin-film technique to semiconductor substrate.
Background technology
Now, the case where various electronic devices are using semiconductor circuit components such as IC are more.To prevent this semi-conductor electricity
For the purpose of electrostatic breakdown caused by the surge current of circuit component, electronic device is provided with Esd protection device.
For example, recording the Esd protection device of diode fashion in patent document 1.The Esd protection device passes through for half
Conductor substrate forms diode using thin-film technique and realizes.
Esd protection device is connected between the signal wire and ground of the IC for being connected with protected object, if surge current is being believed
The flowing of number line, then be oriented to ground by the surge current.
Patent document 1：No. 2014/162795 pamphlet of International Publication No.
However, in the construction using diode fashion as described in Patent Document 1, it is high in the dynamic electric resistor of diode
In the case of, it generates surge current and does not flow to Esd protection device, ESD protects this problem that do not work.
Utility model content
Therefore, the purpose of the utility model is to provide the Esd protection devices of the low diode-type of resistance when conducting.
The Esd protection device of the utility model has：Semiconductor substrate has the first mutually opposed interarea and the second master
Face；Esd protection circuit portion is formed in above-mentioned first main surface side of above-mentioned semiconductor substrate, including the first diode element and
Two diode elements；And ungrounded conductor, it is formed on above-mentioned second interarea of above-mentioned semiconductor substrate, above-mentioned one or two pole
Tube elements and above-mentioned second diode element along the thickness direction of above-mentioned semiconductor substrate are formed with PN junction and via above-mentioned
Semiconductor substrate connects, when overlooking above-mentioned semiconductor substrate, above-mentioned ungrounded conductor include above-mentioned first diode element with
At least part in the region between above-mentioned second diode element, and with above-mentioned first diode element or the above-mentioned 2nd 2
At least part of pole pipe element is overlapped.
In this configuration, between the first diode element and the second diode element, connect in parallel with semiconductor substrate
It is connected to ungrounded conductor.Ungrounded conductor conductivity height (resistivity is low) compared with semiconductor substrate, fills so being protected as ESD
The resistance when conducting set reduces.
In addition, in the Esd protection device of the utility model, preferably ungrounded conductor is formed in the entire of the second interarea
Face.
In this configuration, the raising of the further reduction and reliability structurally of conductivity is realized.
In addition, in the Esd protection device of the utility model, structure preferably below.Esd protection circuit portion has
Three diode elements, the third diode element along the thickness direction of above-mentioned semiconductor substrate be formed with PN junction and with it is above-mentioned
Semiconductor substrate connects, and has on the surface in above-mentioned esd protection circuit portion：First terminal conductor, with above-mentioned first diode member
Part connects, and Chong Die with above-mentioned first diode element in above-mentioned vertical view；Second terminal conductor, with above-mentioned second diode member
Part connects, and Chong Die with above-mentioned second diode element in above-mentioned vertical view；And third terminal conductor, with above-mentioned three or two pole
Tube elements connect, and Chong Die with above-mentioned third diode element in above-mentioned vertical view, and above-mentioned third terminal conductor is to be connected to ground
Terminal conductor, above-mentioned ungrounded conductor is the shape Chong Die with above-mentioned third diode element in above-mentioned vertical view, above-mentioned
When vertical view, above-mentioned third terminal conductor is connected between above-mentioned first terminal conductor and above-mentioned Second terminal conductor, above-mentioned third
The distance of terminal conductor and above-mentioned first terminal conductor is big at a distance from above-mentioned third terminal conductor and above-mentioned Second terminal conductor
It causes identical.
In this configuration, it realizes and has the first electric current road including the first diode element and third diode element
The Esd protection device of diameter and the second current path including the second diode element and third diode element.Moreover,
The difference of resistance when conducting between these first current paths and the second current path is suppressed, also, the first current path
Being isolated between the second current path also improves.
Can also be following structure in addition, in the Esd protection device of the utility model.Above-mentioned semiconductor substrate exists
It is rectangle when vertical view, and diagonal with the first diagonal sum second, above-mentioned esd protection circuit portion has the 4th diode element, should
4th diode element is formed with PN junction along the thickness direction of above-mentioned semiconductor substrate and is connect with above-mentioned semiconductor substrate,
Have on the surface in above-mentioned esd protection circuit portion and is connect with above-mentioned 4th diode element and in above-mentioned vertical view with the above-mentioned 4th
Diode element overlapping forth terminal conductor and virtual terminal conductor, above-mentioned ungrounded conductor be in above-mentioned vertical view at least
A part of shape Chong Die with above-mentioned 4th diode element, above-mentioned first terminal conductor and above-mentioned virtual terminal conductor are above-mentioned
Be respectively arranged at when vertical view the surface in above-mentioned esd protection circuit portion above-mentioned first it is diagonal near, above-mentioned Second terminal conductor
The above-mentioned second diagonal of the surface in above-mentioned esd protection circuit portion is respectively arranged in above-mentioned vertical view with above-mentioned forth terminal conductor
Near, above-mentioned third terminal conductor is configured at the central portion on the surface in above-mentioned esd protection circuit portion in above-mentioned vertical view.
In this configuration, have the first current path including the first diode element and third diode element including
Second current path of the second diode element and third diode element and including the 4th diode element and the three or two pole
The third current path of tube elements, the configuration for realizing terminal conductor balance good Esd protection device.Moreover, these first
The difference of resistance when conducting between current path, the second current path, third current path is suppressed.In addition, the first electric current road
Being isolated between diameter and the second current path also improves.
In addition, in the Esd protection device of the utility model, preferably following structure.In above-mentioned vertical view, above-mentioned
One terminal conductor and above-mentioned forth terminal conductor are configured at the same side, above-mentioned ungrounded conductor relative to above-mentioned third terminal conductor
Have between above-mentioned first terminal conductor and above-mentioned forth terminal conductor and does not form conductor portion.
In this configuration, the isolation between the first current path, the second current path and third current path improves.
According to the utility model, in the Esd protection device of diode-type, resistance when conducting can be reduced.
Description of the drawings
Fig. 1 (A) is the vertical view from the first main surface side of the Esd protection device of the first embodiment of the utility model
Figure, Fig. 1 (B) is side sectional view, and Fig. 1 (C) is the vertical view observed from the second main surface side.
Fig. 2 is the equivalent circuit diagram of the Esd protection device of the first embodiment of the utility model.
Fig. 3 (A) is the vertical view from the first main surface side of the Esd protection device of the second embodiment of the utility model
Figure, Fig. 3 (B) is the vertical view from the second main surface side of the Esd protection device of the second embodiment of the utility model.
Fig. 4 (A), Fig. 4 (B) are the side sectional views of the Esd protection device of the second embodiment of the utility model.
Fig. 5 is the equivalent circuit diagram of the Esd protection device of the second embodiment of the utility model.
Fig. 6 is the vertical view from the first main surface side of the Esd protection device of the third embodiment of the utility model.
Fig. 7 is the vertical view from the second main surface side of the Esd protection device of the 4th embodiment of the utility model.
Fig. 8 (A), Fig. 8 (B) are the side sectional views of the Esd protection device of the 4th embodiment of the utility model.
Fig. 9 is the equivalent circuit diagram of the Esd protection device of the 4th embodiment of the utility model
The explanation of reference numeral：10,10A, 10B, 10C...ESD protective device；20,20A, 20B, 20C... are semiconductor-based
Plate；30,30A, 30C...n type epitaxial layer；41、41A、41B、41C、42、42A、42B、42C、43A、43B、43C、44A、44B、
44C, 45C...n trap；51、51A、51B、51C、52、52A、52B、52C、53A、53B、53C、54A、54B、54C、55C...p
Layer；60,60A... wiring layers again；71,71A, 71B, 71C, 72,72A, 72B, 72C, 73A, 73C, 74A, 75C... contact are led
Body；81,81A, 81B, 81C, 82,82A, 82B, 82C, 83A, 83B, 83C, 84A, 84B, 84C, 85C, 89A... terminal conductor；
90, the ungrounded conductor of 90A, 90B, 90C...；345...ESD protection circuit department；901B, 902B... conductor portion；CR1、CR2、
The corner CR3, CR4...；D1, D2, D3, D4, DG... diode；GAP... conductor portion is not formed；The end P1, P2, P3, P4, PG...
Son；PT1... the first current path；PT2... the second current path；PT3... third current path；PT4... the 4th electric current road
Diameter；R20, R21, R22, R24, RD1, RD2, RC... resistance.
Specific implementation mode
The Esd protection device of the first embodiment of the utility model is illustrated with reference to attached drawing.Fig. 1 (A) is this reality
With the vertical view from the first main surface side of the Esd protection device of novel first embodiment.Fig. 1 (B) is ESD protections
The side sectional view of device.Fig. 1 (C) is the vertical view from the second main surface side of the Esd protection device.Fig. 1 (B) is observation
The figure of A-A sections shown in Fig. 1 (A).
As shown in Fig. 1 (A), Fig. 1 (B), Fig. 1 (C), Esd protection device 10 has semiconductor substrate 20, esd protection circuit
Portion 345, again wiring layer 60, contact conductor 71,72, terminal conductor 81,82, ungrounded conductor 90.
Semiconductor substrate 20 is the Si substrates of N-shaped.Semiconductor substrate 20 is rectangle when looking down.Semiconductor substrate 20 and thickness
Degree direction is orthogonal and has mutually opposed the first interarea and the second interarea.The thickness of preferred semiconductor substrate 20 is relatively thin as possible.
Esd protection circuit portion 345 is formed in the first main surface side of semiconductor substrate 20.Esd protection circuit portion 345 has pair
In semiconductor substrate 20 using so-called thin-film technique formed esd protection circuit portion 345, N-shaped epitaxial layer 30, n traps 41,42,
And p layers 51,52.
N-shaped epitaxial layer 30 is abutted with the first interarea of semiconductor substrate 20, has defined thickness.N-shaped epitaxial layer 30 is n
Type adulterates the layer fewer than semiconductor substrate 20.
N traps 41,42 are formed in N-shaped epitaxial layer 30.N traps 41,42 are substantially to penetrate through N-shaped epitaxial layer 30 along thickness direction
Shape.N traps 41,42 are by configured separate.One square end of n traps 41,42 is contacted with the first interarea of semiconductor substrate 20.N traps 41,
42 be layer of the N-shaped doping than N-shaped epitaxial layer more than 30.
P layers 51,52 are formed in the face of the side opposite with the face abutted with semiconductor substrate 20 in N-shaped epitaxial layer 30.
The face is the surface of semiconductor substrate 20, is the surface in esd protection circuit portion 345.Table of the p layers 51,52 from semiconductor substrate 20
Face is formed with defined depth.Esd protection circuit portion 345 (overlooking Esd protection device 10) is overlooked, p layers 51 and p layers 52 detach.
In the vertical view, p layers 51 are Chong Die with n traps 41, another party's end in contact with n traps 41.In the vertical view, p layers 52 and 42 weight of n traps
It is folded, another party's end in contact with n traps 42.P layers 51,52 are the layers of p-type doping.
Through this structure, the first diode for being formed with PN junction in thickness direction by p layers 51 and n traps 41 is realized
Element and the second diode element for being formed with PN junction in thickness direction by p layers 52 and n traps 42.
Wiring layer 60 is formed in the surface in esd protection circuit portion 345 again.Wiring layer 60 is by insulating properties such as insulative resins again
Material is formed.
Terminal conductor 81,82 is formed in again surface (in the wiring layer 60 and esd protection circuit portion 345 and again of wiring layer 60
The face of the opposite side in face of abutting).Terminal conductor 81,82 is rectangle when looking down.Esd protection device 10 is overlooked, terminal is led
Body 81 and terminal conductor 82 detach.Terminal conductor 81 is Chong Die with p layers 51.Terminal conductor 82 is Chong Die with p layers 52.Terminal conductor 81 with
" the first terminal conductor " of the utility model is corresponding, and terminal conductor 82 is corresponding with " the Second terminal conductor " of the utility model.
Contact conductor 71,72 is formed in again in wiring layer 60.Overlook Esd protection device 10, contact conductor 71 and p layers 51 and
Terminal conductor 81 is overlapped.Contact conductor 71 is contacted with p layers 51 and terminal conductor 81.In the vertical view, contact conductor 72 and p layers 52
It is overlapped with terminal conductor 82.Contact conductor 72 is contacted with p layers 52 and terminal conductor 82.
Ungrounded conductor 90 is formed in the entire surface of the second interarea of semiconductor substrate 20.Ungrounded conductor 90 is by conductivity
Material metal such as Cu, Al that 1 digit or more is higher by relative to semiconductor substrate 20 is constituted.In addition, ungrounded conductor is not
It is directly grounded, and is electrically independent from the conductor layer of ground or other circuit elements.
Through this structure, Esd protection device 10 realizes circuit shown in Fig. 2.Fig. 2 is first reality of the utility model
Apply the equivalent circuit diagram of the Esd protection device of mode.
As shown in Fig. 2, Esd protection device 10 has diode D1, D2, resistance R20.Diode D1 is by p layers 51 and n traps 41
PN junction realize, be above-mentioned the first diode element.Diode D2 is realized by the PN junction of p layers 52 and n traps 42, is above-mentioned
Second diode element.Resistance R20 is realized by semiconductor substrate 20.Terminals P 1 is realized that terminals P 2 is by terminal by terminal conductor 81
Conductor 82 is realized.
Diode D1 includes resistance RD1, is so-called Zener diode.The anode of diode D1 is connect with terminals P 1, and two
The cathode of pole pipe D1 is connect with resistance R20.
Diode D2 includes resistance RD2, is so-called Zener diode.The anode of diode D2 is connect with terminals P 2, and two
The cathode of pole pipe D2 is connect with resistance R20.
Also, in Esd protection device 10, the cathode of diode D1 and the cathode of diode D2 pass through ungrounded conductor 90
Connection.In other words, the cathode of the cathode of diode D1 and diode D2 pass through the resistance R20 that is made of semiconductor substrate 20 and non-
The parallel circuit of earth conductor 90 connects.In addition, ungrounded conductor 90 includes resistance Rc.According to above-mentioned, ungrounded conductor 90
The material that conductivity is higher by 1 digit or more relative to semiconductor substrate 20 is constituted.Therefore, the electricity of the resistance Rc of ungrounded conductor 90
The resistance value of the resistance R20 of resistance value ratio semiconductor substrate 20 is much smaller (Rc ＜ ＜ R20).
In such a configuration, the knot only being connect by resistance R20 with the cathode of the cathode of diode D1 and diode D2
Structure compares, and the resistance between terminals P 1 and terminals P 2 when diode D1, D2 are connected reduces.As a result, by by terminals P 1 or
The either side of person's terminals P 2 is connect with signal wire, and another party is grounded, to which surge current is easy in terminals P 1 and terminals P 2
Between flow, be easy surge current being oriented to ground.
Especially in order to by 10 filming of Esd protection device and by 20 filming of semiconductor substrate, resistance
R20 increases, but by having ungrounded conductor 90, and to which the resistance between terminals P 1 and terminals P 2 is lower, surge current is easy
It is flowed between terminals P 1 and terminals P 2, is easy surge current being oriented to ground.
In addition, in the above description, ungrounded conductor 90 is formed in the entire surface of the second interarea of semiconductor substrate 20.
However, it includes region between terminal conductor 81 and terminal conductor 82 that ungrounded conductor 90, which is when overlooking Esd protection device 10,
At least part, and at least part shape Chong Die with the either side of terminal conductor 81 and terminal conductor 82.Into
One step is preferred, at least part in the region that be when overlooking Esd protection device 10 include between n traps 41 and n traps 42, and at least
The part shape Chong Die with the either side of n traps 41 and n traps 42.That is, ESD protections fill ungrounded conductor 90 when looking down
At least part in the region between 10, including diode D1 and diode D2 is set, and with diode D1's or diode D2
At least part is overlapped.
It is manufactured by manufacturing method as follows by the Esd protection device 10 that this spline structure is constituted.First, pass through film
Technique forms esd protection circuit portion 345 in the first interarea of semiconductor substrate 20.Specifically, the of semiconductor substrate 20
One interarea forms N-shaped epitaxial layer 30.Next, carrying out local doping for N-shaped epitaxial layer 30, n traps 41,42 are formed.Next,
P layers 51 are formed in the surface side of n traps 41, p layers 52 are formed in the surface side of n traps 42.It is formed with esd protection circuit portion as a result,
345.Next, the surface in esd protection circuit portion 345 forms wiring layer 60 again.It is penetrated through next, being formed in wiring layer 60 again
Hole is partly formed conductor by plating etc. and includes the through hole.Terminal conductor 81 and contact 71 1 bodily form of conductor as a result,
At terminal conductor 82 and contact conductor 72 are integrally formed.
Next, being illustrated to the Esd protection device of the second embodiment of the utility model with reference to attached drawing.Fig. 3 (A)
It is the vertical view from the first main surface side of the Esd protection device of the second embodiment of the utility model.Fig. 3 (B) is this
The vertical view from the second main surface side of Esd protection device.Fig. 4 (A), Fig. 4 (B) are the side, sectionals of the Esd protection device
Figure.Fig. 4 (A) is the figure of B-B sections shown in observation chart 3 (A), and Fig. 4 (B) is the figure of C-C sections shown in observation chart 3 (A).
Fig. 5 is the equivalent circuit diagram of the Esd protection device of the second embodiment of the utility model.
As shown in Fig. 3 (A), Fig. 3 (B), Fig. 4 (A), Fig. 4 (B) and Fig. 5, it is simple for, the ESD of present embodiment is protected
Protection unit 10A for first embodiment Esd protection device 10, in the quantity of diode element and the quantity of terminal conductor
Different on increased point, basic composition of the diode element of Esd protection device 10 etc. is identical as Esd protection device 10, omits
The explanation of identical position.
Esd protection device 10A has semiconductor substrate 20A, 41A, 42A, 43A, 44A, p layers of N-shaped epitaxial layer 30A, n trap
51A, 52A, 53A, 54A, again wiring layer 60A, contact conductor 71A, 72A, 73A, 74A and terminal conductor 81A, 82A, 83A,
84A、89A.Terminal conductor 83A is corresponding with " the third terminal conductor " of the utility model, terminal conductor 84A and the utility model
" forth terminal conductor " is corresponding, and terminal conductor 89A is corresponding with " the virtual terminal conductor " of the utility model.
Semiconductor substrate 20A is made of form identical with the semiconductor substrate 20 of first embodiment, and when vertical view is big
Cause rectangle.N-shaped epitaxial layer 30A is made of form identical with the N-shaped epitaxial layer 30 of first embodiment, is formed in semiconductor-based
The first interarea of plate 20A.
N traps 41A, 42A, 43A, 44A is made of and essential structure structure identical with the n traps 41,42 of first embodiment
At.P layers of 51A, 52A, 53A, 54A are made of and essential structure is constituted identical with the p of first embodiment layers 51,52.Root
According to the structure, the first diode element, the second diode element, third diode element, the 4th diode element are realized.The
One diode element is formed by PN junction by 41A and p layers of 51A of n traps and realizes.Second diode element is by 42A and p layers of 52A institutes of n traps
The PN junction of formation is realized.Third diode element is formed by PN junction by 43A and p layers of 53A of n traps and realizes.4th diode element
PN junction is formed by by 44A and p layers of 54A of n traps to realize.
Wiring layer 60A is made of and essential structure is constituted identical with the wiring layer again 60 of first embodiment again.It connects
Conductor 71A, 72A, 73A, 74A is touched to be formed and essential structure structure by the contact conductor 71,72 with first embodiment is identical
At.Terminal conductor 81A, 82A, 83A, 84A, 89A are made of and base identical with the terminal conductor 81,82 of first embodiment
This construction is constituted.
Ungrounded conductor 90A is made of form identical with the ungrounded conductor 90 of first embodiment, is formed in and is partly led
The entire surface of the second interarea of structure base board 20A.In addition, ungrounded conductor 90A includes resistance identical with first embodimently
The value resistance Rc more much smaller than semiconductor substrate 20A.
According to this structure, Esd protection device 10A realizes circuit shown in fig. 5.Fig. 5 is the second of the utility model
The equivalent circuit diagram of the Esd protection device of embodiment.
As shown in figure 5, Esd protection device 10A has diode D1, D2, D4, DG, resistance R21, R22, R24, RC.Two poles
Pipe D1 is formed by PN junction by p layers of 51A and n traps 41A and realizes, is above-mentioned the first diode element.Diode D2 is by p layers of 52A
It is formed by PN junction with n traps 42A to realize, is above-mentioned the second diode element.Diode D4 is by p layers of 54A and n traps 44A institutes shape
At PN junction realize, be above-mentioned the 4th diode element.Diode DG is formed by PN junction by p layers of 53A and n traps 43A and realizes,
It is above-mentioned third diode element.Resistance R21, R22, R24 are realized by semiconductor substrate 20A.More specifically, resistance R21
The interconnecting piece for diode D1 in semiconductor substrate 20A and to pass through region between the interconnecting piece for diode DG real
It is existing.Interconnecting pieces for diode D2 of the resistance R22 in semiconductor substrate 20A and between the interconnecting piece for diode DG lead to
Cross region realization.Interconnecting pieces for diode D4 of the resistance R24 in semiconductor substrate 20A and the connection for diode DG
It is realized by region between portion.Terminals P 1 is realized that terminals P 2 is realized by terminal conductor 82A by terminal conductor 81A, and terminals P 4 is by holding
Sub- conductor 84A realizes that terminals P G is realized by terminal conductor 83A.
The anode of diode D1 is connect with terminals P 1.The cathode of diode D1 is via resistance R21 and ungrounded conductor 90A institutes
The parallel circuit of the resistance Rc of composition, connect with the cathode of diode DG.The anode of diode D2 is connect with terminals P 2.Diode
The parallel circuit with resistance Rc that the cathode of D2 is constituted via resistance R22 and ungrounded conductor 90A, the cathode with diode DG
Connection.The anode of diode D4 is connect with terminals P 4.The cathode of diode D4 is via resistance R24 and ungrounded conductor 90A institutes structure
At the parallel circuit with resistance Rc, connect with the cathode of diode DG.The anode of diode DG is connect with terminals P G.Terminals P G
It is the terminal of ground connection.
With this configuration, the transmission path of connection terminal P1 and terminals P G are the first current path PT1 of surge current.Even
The transmission path of connecting terminal P2 and terminals P G are the second current path PT2 of surge current.The biography of connection terminal P4 and terminals P G
Defeated path is the third current path PT3 of surge current.
Moreover, in this configuration, compared with the case where no ungrounded conductor 90A, the first current path PT1, second
The resistance when conducting of current path PT2 and third current path PT3 reduces.As a result, in the first current path PT1, second
In current path PT2 and third current path PT3, surge current is easy flowing.
The Esd protection device 10A being made of above structure is rectangle when looking down, have corner CR1, CR2, CR3,
This four angles CR4.In other words, it forms the semiconductor substrate of Esd protection device 10A and is formed in the table of the semiconductor substrate
The esd protection circuit portion in face is rectangle when looking down, has this four angles corner CR1, CR2, CR3, CR4.Corner CR1 and corner
CR3 is located at the position of diagonal (first is diagonal), and corner CR2 and corner CR4 are located at the position of diagonal (second is diagonal).
Terminal conductor 81A, contact 71A, p layers of 51A and n traps 41A of conductor are configured near the CR1 of corner.Terminal conductor
82A, contact 72A, p layers of 52A and n traps 42A of conductor are configured near the CR2 of corner.It is attached that terminal conductor 89A is configured at corner CR3
Closely.Terminal conductor 84A, contact 74A, p layers of 54A and n traps 44A of conductor are configured near the CR4 of corner.
Terminal conductor 83A, contact 73A, p layers of 53A and n traps 43A of conductor are configured at the central portion on first direction.Such as
Shown in Fig. 3 (A), Fig. 3 (B), so-called first direction refers to direction (connection corner CR4 and the angle for connecting corner CR1 and corner CR2
The direction of portion CR3).In addition, terminal conductor 83A, contact 73A, p layers of 53A and n traps 43A of conductor are extended along second direction
Shape.As shown in Fig. 3 (A), Fig. 3 (B), so-called second direction refers to connecting the direction (joint angle of corner CR1 and corner CR4
The direction of portion CR2 and corner CR3).(A), Fig. 3 (B) are it is found that first direction and second direction are mutually orthogonal according to fig. 3.
Terminal conductor 83A is configured in a first direction between terminal conductor 81A and terminal conductor 82A.Such as Fig. 3 (A) institute
Show, terminal conductor 83A and terminal conductor 81A distances D13 and terminal conductor 83A and terminal conductor 82A distances D23 substantially phases
Together.Here, the distance between 2 terminal conductors refers to the shortest distance between this 2 terminal conductors when overlooking Esd protection device 10A.
Similarly, contact conductor 73A is configured in a first direction between contact conductor 71A and contact conductor 72A, contact
At a distance from conductor 73A and contact conductor 71A and contact conductor 73A is roughly the same at a distance from contact conductor 72A.In addition, p layers
53A is configured in a first direction between p layers of 51A and p layers of 52A, at a distance from p layers of 53A and p layers of 51A and p layers of 53A and p layers of 52A
Distance it is roughly the same.In addition, n traps 43A is configured in a first direction between n trap 41A and n traps 42A, n traps 43A and n traps 41A
Distance and n traps 43A and n traps 42A at a distance from it is roughly the same.Here, the distance between 2 n traps refers to overlooking Esd protection device
Shortest distance when 10A between this 2 n traps.
By using above-mentioned structure, when overlooking Esd protection device 10A, terminal conductor 81A and terminal conductor 83A away from
From roughly the same at a distance from terminal conductor 83A with terminal conductor 82A.In addition, the biography of the surge current of the first current path PT1
The transmission range of the surge current of defeated distance and the second current path PT2 is roughly the same.Reduce the first current path as a result,
The difference of resistance when the conducting of PT1 and the second current path PT2.As a result, the difference of the ESD protection features between current path becomes
It is small, obtain same characteristic while utilized current path (terminal conductor of external connection) can not be depended on.
In addition, by making terminal conductor 83A become the conductor of ground connection, as a result, the first current path PT1 and the second electric current road
Isolation between diameter PT2 improves.Here, being isolated between so-called first current path PT1 and the second current path PT2 refer to from
The surge current of terminal conductor 81A inputs is difficult to the surge electricity for being transferred to terminal conductor 82A and being inputted from terminal conductor 82A
Stream is difficult to be transferred to terminal conductor 81A.
In addition, by using above-mentioned structure, Esd protection device 10A, terminal conductor 81A and terminal conductor 83A are overlooked
Distance and terminal conductor 84A are roughly the same at a distance from terminal conductor 83A.In addition, the surge current of the first current path PT1
The transmission range of the surge current of transmission range and third current path PT3 is roughly the same.Reduce the first current path as a result,
The difference of resistance when the conducting of PT1 and third current path PT3.
In addition, though it is not shown, but preferably make terminal conductor 84A at a distance from terminal conductor 81A (along second direction
Distance) than terminal conductor 84A, (distance along a first direction) is long at a distance from terminal conductor 83A, with this configuration, the first electricity
Raising is isolated between flow path PT1 and third current path PT3.
In addition, in such a configuration, all four angles in the Esd protection device 10A of rectangle are led configured with terminal
Body, so compared with the mode of no terminal conductor 89A, mounting stability improves.
In addition, since the terminal conductor 83A being connected to ground is more than other terminal conductor 81A, 82A, 84A, realize more
Stable ground connection.
In addition, in the above description, ungrounded conductor 90A is formed in the entire of the second interarea of semiconductor substrate 20A
Face.However, ungrounded conductor 90A is the shape for all conditions for meeting following (1), (2), (3).
(1) region that be when overlooking Esd protection device 10A include between terminal conductor 81A and terminal conductor 83A is extremely
A few part, and the shape that at least part is Chong Die with the either side of terminal conductor 81A and terminal conductor 83A.It is further excellent
Choosing, at least part in the region that be when overlooking Esd protection device 10A include between n trap 41A and n traps 43A, and at least one
The part shape Chong Die with the either side of n trap 41A and n traps 43A.That is, ungrounded conductor 90A overlooks Esd protection device 10A
When include region between diode D1 and diode D3 at least part, and at least with diode D1 or diode D3
Part overlapping.
(2) region that be when overlooking Esd protection device 10A include between terminal conductor 82A and terminal conductor 83A is extremely
A few part, and the shape that at least part is Chong Die with the either side of terminal conductor 82A and terminal conductor 83A.It is further excellent
Choosing, at least part in the region that be when overlooking Esd protection device 10A include between n trap 42A and n traps 43A, and at least one
The part shape Chong Die with the either side of n trap 42A and n traps 43A.That is, ungrounded conductor 90A overlooks Esd protection device 10A
When, include at least part in region between diode D2 and diode D3, and extremely with diode D2 or diode D3
Few part overlapping.
(3) region that be when overlooking Esd protection device 10A include between terminal conductor 84A and terminal conductor 83A is extremely
A few part, and the shape that at least part is Chong Die with the either side of terminal conductor 84A and terminal conductor 83A.It is further excellent
Choosing, at least part in the region that be when overlooking Esd protection device 10A include between n trap 44A and n traps 43A, and at least one
The part shape Chong Die with the either side of n trap 44A and n traps 43A.That is, ungrounded conductor 90A overlooks Esd protection device 10A
When include region between diode D4 and diode D3 at least part, and at least with diode D4 or diode D3
Part overlapping.
Next, being illustrated to the Esd protection device of the third embodiment of the utility model with reference to attached drawing.Fig. 6 is
The vertical view from the first main surface side of the Esd protection device of the third embodiment of the utility model.
As shown in fig. 6, the Esd protection device 10B of present embodiment is protected relative to the ESD involved by second embodiment
Device 10A is different in the structure of ungrounded conductor 90B.Other structures of Esd protection device 10B and Esd protection device 10A
It is identical, omit the explanation of same place.
The semiconductor substrate 20B of Esd protection device 10B is corresponding with the semiconductor substrate 20A of SD protective devices 10A.ESD is protected
P layer 51B, 52B, 53B, 54B of protection unit 10B is corresponding with the p of Esd protection device 10A layer 51A, 52A, 53A, 54A.ESD is protected
Contact conductor 71A, 72A, 73A, 74A couple of contact conductor 71B, 72B, 73B, 74B and Esd protection device 10A of device 10B
It answers.Terminal conductor 81B, 82B, 83B, 84B of Esd protection device 10B and terminal conductor 81A, 82A of Esd protection device 10A,
83A, 84A are corresponded to.In addition, although it is not shown, but Esd protection device 10B N-shaped epitaxial layer と n traps respectively with Esd protection device
The N-shaped epitaxial layer and n traps of 10A corresponds to.
Ungrounded conductor 90B has conductor portion 901B and conductor portion 902B.Conductor portion 901B and conductor portion 902B is to
The shape that one direction extends is in a second direction via the shape for not forming conductor portion GAP arrangements.It is same with first embodiment
Sample, include the resistance value resistance Rc more much smaller than semiconductor substrate 20B in conductor portion 901B and conductor portion 902B.
Conductor portion 901B is Chong Die with terminal conductor 81B, 82B and for the partly overlapping shape of terminal conductor 83B.It leads
Body portion 902B is Chong Die with terminal conductor 84B, 89B and for the partly overlapping shape of terminal conductor 83B.In addition, conductor portion
902B is at least Chong Die with terminal conductor 84B and for the partly overlapping shape of terminal conductor 83B.
By using such structure, the conductor portion 901B Chong Die with terminal conductor 81B and Chong Die with terminal conductor 84B
Conductor portion 902B is not formed conductor portion GAP separation.Therefore, between the first current path PT1 and third current path PT3 every
From raising.
Next, being illustrated to the Esd protection device of the 4th embodiment of the utility model with reference to attached drawing.Fig. 7 is
The vertical view from the second main surface side of the Esd protection device.Fig. 8 (A), Fig. 8 (B) are that the side of the Esd protection device is cutd open
View.Fig. 8 (A) is the figure for observing D-D sections shown in Fig. 7, and Fig. 8 (B) is the figure for observing E-E sections shown in Fig. 7.Fig. 9
It is the equivalent circuit diagram of the Esd protection device of the second embodiment of the utility model.
As shown in Fig. 7, Fig. 8 (A), Fig. 8 (B) and Fig. 9, it is simple for, 10C pairs of the Esd protection device of present embodiment
In first embodiment Esd protection device 10 in the quantity of diode element and the increased point of the quantity of terminal conductor not
Together.The basic composition of the diode element of Esd protection device 10C etc. is identical as Esd protection device 10, and same place illustrates province
Slightly.
Esd protection device 10C has semiconductor substrate 20C, N-shaped epitaxial layer 30C, n trap 41C, 42C, 43C, 44C, 45C, p
Layer 51C, 52C, 53C, 54C, 55C, again wiring layer 60C, contact conductor 71C, 72C, 73C, 74C, 75C and terminal conductor
81C、82C、83C、84C、85C。
Semiconductor substrate 20C is made of form identical with the semiconductor substrate 20 of first embodiment, and when vertical view is big
Cause rectangle.N-shaped epitaxial layer 30C is made of form identical with the N-shaped epitaxial layer 30 of first embodiment, is formed in semiconductor-based
The first interarea of plate 20C.
N traps 41C, 42C, 43C, 44C, 45C is made of and basic structure identical with the n traps 41,42 of first embodiment
Make composition.P layers of 51C, 52C, 53C, 54C, 55C are made of and essential structure identical with the p of first embodiment layers 51,52
It constitutes.With this configuration, the first diode element, the second diode element, third diode element, the 4th diode are realized
Element.First diode element is formed by PN junction by 41C and p layers of 51C of n traps and realizes.Second diode element is by n traps 42C and p
Layer 52C is formed by PN junction realization.Third diode element is formed by PN junction by 43C and p layers of 53C of n traps and realizes.Four or two pole
Tube elements are formed by PN junction by 44C and p layers of 54C of n traps and realize.5th diode element is formed by by 45C and p layers of 55C of n traps
PN junction is realized.
Wiring layer 60C is made of and essential structure is constituted identical with the wiring layer again 60 of first embodiment again.It connects
Conductor 71C, 72C, 73C, 74C, 75C is touched to be formed and basic structure by the contact conductor 71,72 with first embodiment is identical
Make composition.Terminal conductor 81C, 82C, 83C, 84C, 85C by it is identical with the terminal conductor 81,82 of first embodiment form with
And essential structure is constituted.
Ungrounded conductor 90C is made of same form of the ungrounded conductor 90 with first embodiment, is formed in and is partly led
The entire surface of the second interarea of structure base board 20C.
Include resistance value than semiconductor substrate 20A in ungrounded conductor 90C in addition, in the same manner as first embodiment
Much smaller resistance Rc.
Shown in Fig. 9, Esd protection device 10C have diode D1, D2, D3, D4, DG, resistance R21, R22, R23, R24,
RC.Diode D1 is formed by PN junction by p layers of 51C and n traps 41C and realizes, is above-mentioned the first diode element.Diode D2 by
P layers of 52C and n traps 42C are formed by PN junction realization, are above-mentioned the second diode elements.Diode D3 is by p layers of 54C and n traps
44C is formed by PN junction realization, is above-mentioned the 4th diode element.Diode D4 is formed by PN by p layers of 55C and n traps 45C
It is solid existing, it is above-mentioned the 5th diode element.Diode DG is formed by PN junction by p layers of 53C and n traps 43C and realizes, is above-mentioned
Third diode element.Resistance R21, R22, R23, R24 are realized by semiconductor substrate 20C.
More specifically, interconnecting pieces for diode D1 of the resistance R21 in semiconductor substrate 20B be directed to diode
It is realized by region between the interconnecting piece of DG.Interconnecting pieces and needle for diode D2 of the resistance R22 in semiconductor substrate 20B
It is realized by region between the interconnecting piece of diode DG.Companies for diode D4 of the resistance R23 in semiconductor substrate 20B
It socket part and is realized by region between the interconnecting piece of diode DG.Resistance R24 is directed to two poles in semiconductor substrate 20B
It the interconnecting piece of pipe D5 and is realized by region between the interconnecting piece of diode DG.Terminals P 1 is realized by terminal conductor 81C, is held
Sub- P2 is realized that terminals P 3 is realized by terminal conductor 84C by terminal conductor 82C, and terminals P 4 is realized by terminal conductor 85C, terminals P G
It is realized by terminal conductor 83C.
The anode of diode D1 is connect with terminals P 1.The cathode of diode D1 is via resistance R21's and ungrounded conductor 90C
The parallel circuit of resistance Rc is connect with the cathode of diode DG.The anode of diode D2 is connect with terminals P 2.The moon of diode D2
Pole is connect via the parallel circuit of the resistance Rc of resistance R22 and ungrounded conductor 90C with the cathode of diode DG.Diode D3
Cathode via resistance R23 and ungrounded conductor 90C resistance Rc parallel circuit, connect with the cathode of diode DG.Two poles
The anode of pipe D4 is connect with terminals P 4.The cathode of diode D4 via the resistance Rc of resistance R24 and ungrounded conductor 90C parallel connection
Circuit is connect with the cathode of diode DG.The anode of diode DG is connect with terminals P G.Terminals P G is the terminal of ground connection.
According to the structure, the transmission path of connection terminal P1 and terminals P G are the first current path PT1 of surge current.Even
The transmission path of connecting terminal P2 and terminals P G are the second current path PT2 of surge current.The biography of connection terminal P4 and terminals P G
Defeated path is the third current path PT3 of surge current.The transmission path of connection terminal P5 and terminals P G are the of surge current
Four current path PT4.
Moreover, in this configuration, compared with the case where no ungrounded conductor 90C, the first current path PT1, second
The resistance when conducting of current path PT2, third current path PT3 and the 4th current path PT4 reduces.As a result, first
In current path PT1, the second current path PT2, third current path PT3 and the 4th current path PT4, surge current holds
Easily flowing.
The Esd protection device 10C being made of above structure is rectangle when looking down, have corner CR1, CR2, CR3,
This four angles CR4.In other words, it forms the semiconductor substrate of Esd protection device 10C and is formed in the table of the semiconductor substrate
The esd protection circuit portion in face is rectangle when looking down, has this four angles corner CR1, CR2, CR3, CR4.Corner CR1 and corner
CR3 is located at the position of diagonal (first is diagonal), and corner CR2 and corner CR4 are located at the position of diagonal (second is diagonal).
Terminal conductor 81C, contact 71C, p layers of 51C and n traps 41C of conductor are configured near the CR1 of corner.Terminal conductor
82C, contact 72C, p layers of 52C and n traps 42C of conductor are configured near the CR2 of corner.Terminal conductor 84C, contact conductor 74C, p
Layer 54C and n traps 44C is configured near the CR3 of corner.Terminal conductor 85C, contact 75C, p layers of 55C and n traps 45C of conductor match
It is placed near the CR4 of corner.
Terminal conductor 83C, contact 73C, p layers of 53C and n traps 43C of conductor are configured at the central portion on first direction.Such as
Shown in Fig. 7, so-called first direction refers to the direction (side of connection corner CR4 and corner CR3 for connecting corner CR1 and corner CR2
To).In addition, terminal conductor 83C, contact 73C, p layers of 53C and n traps 43C of conductor are the shapes extended along second direction.Such as
Shown in Fig. 7, so-called second direction refers to connecting the direction (side of connection corner CR2 and corner CR3 of corner CR1 and corner CR4
To).As shown in Figure 7, first direction and second direction are mutually orthogonal.
Terminal conductor 83C is configured in a first direction between terminal conductor 81C and terminal conductor 82C.As shown in fig. 7,
Terminal conductor 83C and terminal conductor 81C distances D13 and terminal conductor 83C and terminal conductor 82C distances D23 are roughly the same.
Similarly, terminal conductor 83C and terminal conductor 85C distances D53 and terminal conductor 83C and terminal conductor 84C distances D43 are big
It causes identical.Here, the distance between 2 terminal conductors refers to most short between this 2 terminal conductors when overlooking Esd protection device 10C
Distance.
By using above-mentioned structure, to overlook Esd protection device 10C, terminal conductor 81C and terminal conductor 83C
Distance and terminal conductor 82C are roughly the same at a distance from terminal conductor 83C.In addition, the surge current of the first current path PT1
The transmission range of the surge current of transmission range and the second current path PT2 is roughly the same.
Similarly, at a distance from terminal conductor 85C and terminal conductor 83C and terminal conductor 84C is at a distance from terminal conductor 83C
It is roughly the same.In addition, the surge current of the transmission range and the 4th current path PT4 of the surge current of third current path PT3
Transmission range it is roughly the same.
Reduce the difference of the resistance when conducting of the first current path PT1 and the second current path PT2 as a result,.Similarly,
Reduce the difference of the resistance when conducting of third current path PT3 and the 4th current path PT4.As a result, between current path
The difference of ESD protection features becomes smaller, and can not depend on utilized current path (terminal conductor of external connection) and obtain equally
Characteristic.
In addition, by making terminal conductor 83C become the conductor of ground connection, to the first current path PT1 and the second electric current road
Raising is isolated between isolation, third current path PT3 and the 4th current path PT4 between diameter PT2.Here, the first electric current
Being isolated between path P T1 and the second current path PT2 refers to that the surge current inputted from terminal conductor 81C is difficult to be transferred to end
Sub- conductor 82C and the surge current inputted from terminal conductor 82C are difficult to be transferred to terminal conductor 81C.Similarly, third electricity
Being isolated between flow path PT3 and the 4th current path PT4 refers to that the surge current inputted from terminal conductor 84C is difficult to be transferred to
Terminal conductor 85C and the surge current inputted from terminal conductor 85C are difficult to be transferred to terminal conductor 84C.
In addition, by using above-mentioned structure, thus when overlooking Esd protection device 10C, terminal conductor 81C and terminal
The distance and terminal conductor 85C of conductor 83C is roughly the same at a distance from terminal conductor 83C.In addition, the first current path PT1
The transmission range of the surge current of the transmission range of surge current and the 4th current path PT4 is roughly the same.Reduce as a result,
The difference of resistance when the conducting of one current path PT1 and the 4th current path PT4.
Similarly, Esd protection device 10C is overlooked, terminal conductor 82C is at a distance from terminal conductor 83C and terminal conductor 84C
With it is roughly the same at a distance from terminal conductor 83C.In addition, transmission range and the third electricity of the surge current of the second current path PT2
The transmission range of the surge current of flow path PT3 is roughly the same.Reduce the second current path PT2 and third electric current road as a result,
The difference of resistance when the conducting of diameter PT3.
In addition, though it is not shown, but preferably make terminal conductor 85C at a distance from terminal conductor 81C (along second direction
Distance) than terminal conductor 85C, (distance along a first direction) is long at a distance from terminal conductor 83C, with this configuration, the first electricity
Raising is isolated between flow path PT1 and the 4th current path PT4.Similarly, preferably make terminal conductor 84C and terminal conductor
The distance (along the distance of second direction) of 82C than terminal conductor 84C at a distance from terminal conductor 83C (along a first direction
Distance) it is long, with this configuration, raising is isolated between the second current path PT2 and third current path PT3.
In addition, by using the structure, also due to the terminal conductor 83C being connected to ground be more than other terminal conductor 81C,
82C, 84C, 85C, and realize more stable ground connection.
In addition, in explanation in the third embodiment, show have the mode of a virtual terminal conductor, but also can
Enough virtual terminal conductors for 2 or more apply above-mentioned structure.
Claims (5)
1. a kind of Esd protection device, which is characterized in that have：
Semiconductor substrate has mutually opposed the first interarea and the second interarea；
Esd protection circuit portion is formed in above-mentioned first main surface side of above-mentioned semiconductor substrate, including the first diode element and
Two diode elements；And
Ungrounded conductor is formed on above-mentioned second interarea of above-mentioned semiconductor substrate,
Above-mentioned first diode element and above-mentioned second diode element are formed with along the thickness direction of above-mentioned semiconductor substrate
PN junction and via above-mentioned semiconductor substrate connect,
When overlooking above-mentioned semiconductor substrate, above-mentioned ungrounded conductor includes above-mentioned first diode element and above-mentioned two or two pole
At least part in the region between tube elements, and extremely with above-mentioned first diode element or above-mentioned second diode element
Few part overlapping.
2. Esd protection device according to claim 1, which is characterized in that
Above-mentioned ungrounded conductor is formed in the entire surface of above-mentioned second interarea.
3. Esd protection device according to claim 1 or 2, which is characterized in that
Above-mentioned esd protection circuit portion has third diode element, and the third diode element is along above-mentioned semiconductor substrate
Thickness direction is formed with PN junction and is connect with above-mentioned semiconductor substrate,
Have on the surface in above-mentioned esd protection circuit portion：
First terminal conductor is connect with above-mentioned first diode element, and in above-mentioned vertical view with above-mentioned first diode element
Overlapping；
Second terminal conductor is connect with above-mentioned second diode element, and in above-mentioned vertical view with above-mentioned second diode element
Overlapping；And
Third terminal conductor is connect with above-mentioned third diode element, and in above-mentioned vertical view with above-mentioned third diode element
Overlapping,
Above-mentioned third terminal conductor is the terminal conductor being connected to ground,
Above-mentioned ungrounded conductor is the shape Chong Die with above-mentioned third diode element in above-mentioned vertical view,
In above-mentioned vertical view,
Above-mentioned third terminal conductor is connected between above-mentioned first terminal conductor and above-mentioned Second terminal conductor,
The distance of above-mentioned third terminal conductor and above-mentioned first terminal conductor and above-mentioned third terminal conductor and above-mentioned Second terminal
The distance of conductor is roughly the same.
4. Esd protection device according to claim 3, which is characterized in that
Above-mentioned semiconductor substrate is rectangle when looking down, and diagonal with the first diagonal sum second,
Above-mentioned esd protection circuit portion has the 4th diode element, and the 4th diode element is along above-mentioned semiconductor substrate
Thickness direction is formed with PN junction and is connect with above-mentioned semiconductor substrate,
The surface in above-mentioned esd protection circuit portion have connect with above-mentioned 4th diode element and in above-mentioned vertical view with it is above-mentioned
The forth terminal conductor and virtual terminal conductor of 4th diode element overlapping,
Above-mentioned ungrounded conductor is the shape that at least part is Chong Die with above-mentioned 4th diode element in above-mentioned vertical view,
Above-mentioned first terminal conductor and above-mentioned virtual terminal conductor are respectively arranged at above-mentioned esd protection circuit portion in above-mentioned vertical view
Surface above-mentioned first it is diagonal near,
Above-mentioned Second terminal conductor and above-mentioned forth terminal conductor are respectively arranged at above-mentioned esd protection circuit portion in above-mentioned vertical view
Surface above-mentioned second it is diagonal near,
Above-mentioned third terminal conductor is configured at the central portion on the surface in above-mentioned esd protection circuit portion in above-mentioned vertical view.
5. Esd protection device according to claim 4, which is characterized in that
In above-mentioned vertical view,
Above-mentioned first terminal conductor and above-mentioned forth terminal conductor are configured at the same side relative to above-mentioned third terminal conductor,
Above-mentioned ungrounded conductor has between above-mentioned first terminal conductor and above-mentioned forth terminal conductor does not form conductor portion.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JP2016237411 | 2016-12-07 | ||
| JP2016-237411 | 2016-12-07 | ||
| JP2017-170743 | 2017-09-06 | ||
| JP2017170743A JP6866807B2 (en) | 2016-12-07 | 2017-09-06 | ESD protection device |
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| Publication Number | Publication Date |
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| CN207624696U true CN207624696U (en) | 2018-07-17 |
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|---|---|---|---|---|
| JPS61206269A (en) * | 1985-03-11 | 1986-09-12 | Nec Corp | Semiconductor device |
| JPH06104394B2 (en) * | 1986-06-11 | 1994-12-21 | 株式会社東芝 | Portable storage media |
| JP2003197667A (en) * | 2001-12-27 | 2003-07-11 | Kinseki Ltd | Integrated circuit device |
| WO2016013555A1 (en) * | 2014-07-23 | 2016-01-28 | 株式会社村田製作所 | Esd protection function-equipped composite electronic component |
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