CN207603590U - A kind of comparator circuit - Google Patents
A kind of comparator circuit Download PDFInfo
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- CN207603590U CN207603590U CN201721679339.4U CN201721679339U CN207603590U CN 207603590 U CN207603590 U CN 207603590U CN 201721679339 U CN201721679339 U CN 201721679339U CN 207603590 U CN207603590 U CN 207603590U
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Abstract
The utility model is related to a kind of comparator circuit, including：One current mirror load；First metal-oxide-semiconductor, source electrode are connect with the first output terminal of the current mirror load, and drain electrode is grounded by second resistance；Second metal-oxide-semiconductor, source electrode are connect with the second output terminal of the current mirror load, and are passed through first resistor and connect with the source electrode of first metal-oxide-semiconductor, and drain electrode is grounded by 3rd resistor；One comparator unit；First switch, one end are connect with the source electrode of first metal-oxide-semiconductor, and the other end is connect with first threshold current source；Second switch, one end are connect with the source electrode of second metal-oxide-semiconductor, and the other end is connect with second threshold current source；And one connect with the first threshold current source and second threshold current source with adjust the first threshold current source and second threshold current source size of current threshold current adjustment unit.The utility model in the source electrode of the first metal-oxide-semiconductor and the second metal-oxide-semiconductor by generating voltage difference, so as to fulfill the accurate adjustable of comparator turn threshold.
Description
Technical field
The utility model is related to a kind of comparator circuits.
Background technology
It is well known that the size that comparator is widely used in various analog signals judges.As shown in Figure 1, conventional comparison
Device circuit be it is a kind of judge both end voltage size zero-crossing comparator, including multiple metal-oxide-semiconductor M8-M14, wherein, metal-oxide-semiconductor M8 with
The source electrode of metal-oxide-semiconductor M9 is connected, and input voltage signal V+, V- are applied directly to the grid of metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9, metal-oxide-semiconductor M8 respectively
It is equal with the breadth length ratio of metal-oxide-semiconductor M9, metal-oxide-semiconductor M10 and metal-oxide-semiconductor M11, when input voltage signal V+ is higher than input voltage signal V-
When, metal-oxide-semiconductor M9 fills the electric current for being less than metal-oxide-semiconductor M11 to the electric current of metal-oxide-semiconductor M12 grids and dragging down, so that the grid of metal-oxide-semiconductor M12
Voltage reduces, and metal-oxide-semiconductor M12 is closed, and the electric current of metal-oxide-semiconductor M13 raises output voltage OUT, realizes Zero-cross comparator.Certainly, if
The breadth length ratio of metal-oxide-semiconductor M10 and metal-oxide-semiconductor M11 are different, then can also realize that the voltage of different threshold values compares, but this can only realize one
Kind compares threshold value, and the threshold value is affected by technique.Therefore, this comparator circuit can not be applicable to comparator
The system that threshold value accurately controls.
Utility model content
In order to solve the above-mentioned problems of the prior art, the utility model is intended to provide a kind of comparator circuit, with reality
Now comparator turn threshold is accurate adjustable.
A kind of comparator circuit described in the utility model, including：
One current mirror load, first input end are connected with the second input terminal and receive an operating voltage signal；
First metal-oxide-semiconductor, grid receive a negative comparison voltage signal, the first output of source electrode and the current mirror load
End connection, drain electrode are grounded by second resistance；
Second metal-oxide-semiconductor, grid receives one, and just relatively voltage signal, source electrode are exported with the second of the current mirror load
End connection, and pass through first resistor and connect with the source electrode of first metal-oxide-semiconductor, drain electrode is grounded by 3rd resistor；
One comparator unit, positive input terminal are connected to the drain electrode of first metal-oxide-semiconductor, and negative input end is connected to described
The drain electrode of second metal-oxide-semiconductor；
First switch, one end are connect with the source electrode of first metal-oxide-semiconductor, and the other end connects with first threshold current source
It connects；
Second switch, one end are connect with the source electrode of second metal-oxide-semiconductor, and the other end connects with second threshold current source
It connects；And
One connect with the first threshold current source and second threshold current source with adjust the first threshold current source with
And the threshold current adjustment unit of the size of current of second threshold current source.
In above-mentioned comparator circuit, the threshold current adjustment unit includes：
One operational amplifier, positive input terminal receive a reference voltage signal, and negative input end passes through the 4th resistance eutral grounding；
Third metal-oxide-semiconductor, grid are connect with the output terminal of the operational amplifier, source electrode and the operational amplifier
Negative input end connects；
4th metal-oxide-semiconductor, drain electrode are connect with the drain electrode of the third metal-oxide-semiconductor；
5th metal-oxide-semiconductor, drain electrode are connect with the source electrode of the 4th metal-oxide-semiconductor；
6th metal-oxide-semiconductor, drain electrode of the grid respectively with the grid and the 4th metal-oxide-semiconductor of the 5th metal-oxide-semiconductor are connect,
Its source electrode is connect with the source electrode of the 5th metal-oxide-semiconductor；
7th metal-oxide-semiconductor, grid are connect with the grid of the 4th metal-oxide-semiconductor, the drain electrode of source electrode and the 6th metal-oxide-semiconductor
Connection；And
One proportional current mirror unit, first input end are connect with the drain electrode of the 7th metal-oxide-semiconductor, the second input terminal
It is connect with the first threshold current source, third input terminal is connect with the second threshold current source, output terminal ground connection.
In above-mentioned comparator circuit, the proportional current mirror unit includes：
One is connected to the reference constant-current source between the drain electrode of the 7th metal-oxide-semiconductor and ground, size of current I；
N the first binary switch, one end of those the first binary switch are connected to the first threshold current source, often
The other end of a first binary switch is grounded respectively by one first constant-current source；
N the second binary switch, one end of those the second binary switch are connected to the second threshold current source, often
The other end of a second binary switch is grounded respectively by one second constant-current source；
Wherein, the size of current of n first constant-current sources be followed successively by I, 2I ..., 2nI, n second constant-current sources
Size of current be followed successively by I, 2I ..., 2nI.
In above-mentioned comparator circuit, the current mirror load includes：Connect with the source electrode of first metal-oxide-semiconductor
One current source and the second current source being connect with the source electrode of second metal-oxide-semiconductor, wherein, first current source and the second electricity
The size of current in stream source is identical.
In above-mentioned comparator circuit, the second resistance is identical with the resistance value size of 3rd resistor.
In above-mentioned comparator circuit, the first resistor and the resistance that the 4th resistance is same type.
As a result of above-mentioned technical solution, the utility model is by comparing to pipe, i.e. the first metal-oxide-semiconductor and
First resistor is connected between two metal-oxide-semiconductors, and using current mirror load and by setting first threshold current source or second threshold
The electric current of first resistor is flowed through in the size of current control of current source, to generate voltage in the source electrode of the first metal-oxide-semiconductor and the second metal-oxide-semiconductor
Difference, so as to fulfill the accurate adjustable of comparator turn threshold.
Description of the drawings
Fig. 1 is the structure diagram of conventional comparator circuit；
Fig. 2 is a kind of structure diagram of comparator circuit of the utility model；
Fig. 3 is the structure diagram of threshold current adjustment unit in a kind of comparator circuit of the utility model.
Specific embodiment
Below in conjunction with the accompanying drawings, the preferred embodiment of the utility model is provided, and is described in detail.
As shown in Figure 2,3, the utility model, i.e., a kind of comparator circuit, including：
Current mirror load 100, first input end are connected with the second input terminal and receive operating voltage signal VDD, specifically
For, current mirror load 100 includes：First current source I1 and the second current source I2, the first current source I1 and the second current source
The input terminal of I2 is connected and receives operating voltage signal VDD, wherein, the size of current of the first current source I1 and the second current source I2
It is identical, i.e. I1=I2；
First metal-oxide-semiconductor M1, grid receive negative comparison voltage signal V-, and the first of source electrode and current mirror load 100 is defeated
The output terminal connection of outlet, i.e. the first current source I1, drain electrode are grounded by second resistance R2；
Second metal-oxide-semiconductor M2, grid receive positive relatively voltage signal V+, and the second of source electrode and current mirror load 100 is defeated
The output terminal connection of outlet, i.e. the second current source I2, and pass through first resistor R1 and connect with the source electrode of the first metal-oxide-semiconductor M1, it leaks
Pole is grounded by 3rd resistor R3, wherein, second resistance R2 is identical with the resistance value size of 3rd resistor R3, i.e. R2=R3；
Comparator unit Comp, positive input terminal are connected to the drain electrode of the first metal-oxide-semiconductor M1, and negative input end is connected to second
The drain electrode of metal-oxide-semiconductor M2, in the present embodiment, comparator unit Comp are conventional zero-crossing comparator；
First switch S1, one end are connect with the source electrode of the first metal-oxide-semiconductor M1, and the other end connects with first threshold current source I3
It connects；
Second switch S2, one end are connect with the source electrode of the second metal-oxide-semiconductor M2, and the other end connects with second threshold current source I4
It connects；And
Connect with first threshold current source I3 and second threshold current source I4 with adjust the first threshold current source I3 with
And the threshold current adjustment unit 200 of the size of current of second threshold current source I4, specifically, threshold current adjustment unit
200 include：
Operational amplifier A MP, positive input terminal receive the reference voltage signal of chip interior, such as the band in the present embodiment
Gap reference voltage signal Vbg (voltage signal does not change substantially with temperature and technique change), negative input end passes through the 4th
Resistance R4 is grounded；
Third metal-oxide-semiconductor M3, grid are connect with the output terminal of operational amplifier A MP, and source electrode is with operational amplifier A MP's
Negative input end connects；
4th metal-oxide-semiconductor M4, drain electrode are connect with the drain electrode of third metal-oxide-semiconductor M3；
5th metal-oxide-semiconductor M5, drain electrode are connect with the source electrode of the 4th metal-oxide-semiconductor M4；
6th metal-oxide-semiconductor M6, drain electrode of the grid respectively with the grid and the 4th metal-oxide-semiconductor M4 of the 5th metal-oxide-semiconductor M5 are connect,
Source electrode is connect with the source electrode of the 5th metal-oxide-semiconductor M5；
7th metal-oxide-semiconductor M7, grid are connect with the grid of the 4th metal-oxide-semiconductor M4, and the drain electrode of source electrode and the 6th metal-oxide-semiconductor M6 connect
It connects；And
Proportional current mirror unit 300, first input end are connect with the drain electrode of the 7th metal-oxide-semiconductor M7, the second input terminal
It is connect with first threshold current source I3, third input terminal is connect with second threshold current source I4, output terminal ground connection, specific next
It says, proportional current mirror unit 300 includes：
The reference constant-current source 301 being connected between the drain electrode of the 7th metal-oxide-semiconductor M7 and ground, size of current I；
N the first binary switch k1、k2、……、kn, those first binary switch k1、k2、……、knOne end phase
It is connected to first threshold current source I3, each first binary switch k1、k2、……、knThe other end pass through one first constant current respectively
Source 302 is grounded；
N the second binary switch a1、a2、……、an, those second binary switch a1、a2、……、anOne end phase
It is connected to second threshold current source I4, each second binary switch a1、a2、……、anThe other end pass through one second constant current respectively
Source 303 is grounded；
Wherein, the size of current of n the first constant-current sources 302 be followed successively by I, 2I ..., 2nI, n the second constant-current sources 303
Size of current be followed successively by I, 2I ..., 2nI.
It is described in detail with reference to the operation principle of Fig. 2,3 pairs of the utility model.
Assuming that first switch S1 is closed, second switch S2 is disconnected, and first threshold current source I3 draws the source of the first metal-oxide-semiconductor M1
Pole.When comparator is in overturning state, the pressure drop on second resistance R2 and 3rd resistor R3 is equal, so flowing through the two resistance
Electric current it is equal, so as to show that the electric current for flowing through the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 is equal, that is, the I5=I6 in Fig. 2, into
And the pressure drop of grid source VGS1, VGS2 of first, second metal-oxide-semiconductor M1, M2 are equal.Thus obtain with following formula 1.~4.：
I1=I2 is 1.；
I5=I6 is 2.；
I1+I7-I3=I5 is 3.；
I2-I7=I6 is 4.；
According to above-mentioned formula 1.~5. and 6. 4. can obtain with following formula：
I7=I3/2 is 5.；
(V+)-(V-)=VGS1+I7*R1-VGS2=I3/2*R1 is 6.；
It can be seen that the turn threshold of comparator becomes for R1*I3/2.
Similarly, if second switch S2 is closed, first switch S1 is disconnected, then the turn threshold of comparator is-R1*I4/2.
Therefore, by adjusting the size of current of first threshold current source I3 and second threshold current source I4, you can easily
Set the turn threshold of comparator.
In order to accurately obtain the turn threshold of comparator, can threshold value be obtained by internal reference level divided by resistance
Adjust electric current.Specifically, operational amplifier A MP negative-feedbacks allow the source voltage of third metal-oxide-semiconductor M3 to be equal to reference voltage first
Therefore Vbg, flows through the reference current I=Vbg/R4 of the 4th resistance R4, as a result, with reference to the size of current I=of constant-current source 301
Vbg/R4, so can obtain first threshold current source I3 size of current expression formula 7.：
I3=(20k1+21k2+……+2nkn)*Vbg/R4 ⑦；
Wherein, k1~knRepresent binary switch state, it is 1 to be closed duration, cut off value 0；
By above formula 6. and 7., the further expression formula of turn threshold can be obtained 8.：
(V+)-(V-)=(20k1+21k2+……+2nkn)*Vbg*R1/2R4 ⑧。
Wherein, k1* (Vbg*R1)/2R4 is the minimum turn threshold according to actual needs setting.
Similarly, the expression formula of the size of current of second threshold current source I4 can be obtained 9.：
I4=(20a1+21a2+……+2nan)*Vbg/R4 ⑨；
Wherein, a1~anRepresent binary switch state, it is 1 to be closed duration, cut off value 0
Thus the further expression formula of turn threshold is obtained 10.：
(V+)-(V-)=- (20k1+21k2+……+2nkn)*Vbg*R1/2R4 ⑩。
8. and 10. according to above formula as can be seen that have the opposite resistance value of first resistor R1 and the 4th resistance R4 in turn threshold,
Therefore, in the present embodiment first resistor R1 and the 4th resistance R4 be same type resistance, so as to eliminate technique to overturning
The influence of threshold value.
Above-described, the only preferred embodiment of the utility model is not intended to limit the scope of the utility model, this
Above-described embodiment of utility model can also make a variety of changes.I.e. every claims according to the present utility model application and
Simple, the equivalent changes and modifications that description is made fall within the claims of the utility model patent.This
The not detailed description of utility model is routine techniques content.
Claims (6)
1. a kind of comparator circuit, which is characterized in that the circuit includes：
One current mirror load, first input end are connected with the second input terminal and receive an operating voltage signal；
First metal-oxide-semiconductor, grid receive a negative comparison voltage signal, and the first output terminal of source electrode and the current mirror load connects
It connects, drain electrode is grounded by second resistance；
Second metal-oxide-semiconductor, grid receives one, and just relatively voltage signal, the second output terminal of source electrode and the current mirror load connect
It connects, and passes through first resistor and connect with the source electrode of first metal-oxide-semiconductor, drain electrode is grounded by 3rd resistor；
One comparator unit, positive input terminal are connected to the drain electrode of first metal-oxide-semiconductor, and negative input end is connected to described second
The drain electrode of metal-oxide-semiconductor；
First switch, one end are connect with the source electrode of first metal-oxide-semiconductor, and the other end is connect with first threshold current source；
Second switch, one end are connect with the source electrode of second metal-oxide-semiconductor, and the other end is connect with second threshold current source；With
And
One connect to adjust the first threshold current source and with the first threshold current source and second threshold current source
The threshold current adjustment unit of the size of current in two threshold current sources.
2. comparator circuit according to claim 1, which is characterized in that the threshold current adjustment unit includes：
One operational amplifier, positive input terminal receive a reference voltage signal, and negative input end passes through the 4th resistance eutral grounding；
Third metal-oxide-semiconductor, grid are connect with the output terminal of the operational amplifier, and source electrode is negative defeated with the operational amplifier
Enter end connection；
4th metal-oxide-semiconductor, drain electrode are connect with the drain electrode of the third metal-oxide-semiconductor；
5th metal-oxide-semiconductor, drain electrode are connect with the source electrode of the 4th metal-oxide-semiconductor；
6th metal-oxide-semiconductor, drain electrode of the grid respectively with the grid and the 4th metal-oxide-semiconductor of the 5th metal-oxide-semiconductor are connect, source
Pole is connect with the source electrode of the 5th metal-oxide-semiconductor；
7th metal-oxide-semiconductor, grid are connect with the grid of the 4th metal-oxide-semiconductor, and the drain electrode of source electrode and the 6th metal-oxide-semiconductor connects
It connects；And
One proportional current mirror unit, first input end are connect with the drain electrode of the 7th metal-oxide-semiconductor, the second input terminal and institute
The connection of first threshold current source is stated, third input terminal is connect with the second threshold current source, output terminal ground connection.
3. comparator circuit according to claim 2, which is characterized in that the proportional current mirror unit includes：
One is connected to the reference constant-current source between the drain electrode of the 7th metal-oxide-semiconductor and ground, size of current I；
N the first binary switch, one end of those the first binary switch is connected to the first threshold current source, Mei Gesuo
The other end for stating the first binary switch is grounded respectively by one first constant-current source；
N the second binary switch, one end of those the second binary switch is connected to the second threshold current source, Mei Gesuo
The other end for stating the second binary switch is grounded respectively by one second constant-current source；
Wherein, the size of current of n first constant-current sources be followed successively by I, 2I ..., the electricity of 2nI, n second constant-current sources
Stream size be followed successively by I, 2I ..., 2nI.
4. comparator circuit according to claim 1, which is characterized in that the current mirror load includes：With described first
First current source of the source electrode connection of metal-oxide-semiconductor and the second current source being connect with the source electrode of second metal-oxide-semiconductor, wherein, institute
The size of current for stating the first current source and the second current source is identical.
5. comparator circuit according to claim 1, which is characterized in that the resistance value of the second resistance and 3rd resistor is big
It is small identical.
6. comparator circuit according to claim 2, which is characterized in that the first resistor is mutually similar with the 4th resistance
The resistance of type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721679339.4U CN207603590U (en) | 2017-12-06 | 2017-12-06 | A kind of comparator circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721679339.4U CN207603590U (en) | 2017-12-06 | 2017-12-06 | A kind of comparator circuit |
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| Publication Number | Publication Date |
|---|---|
| CN207603590U true CN207603590U (en) | 2018-07-10 |
Family
ID=62762704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721679339.4U Withdrawn - After Issue CN207603590U (en) | 2017-12-06 | 2017-12-06 | A kind of comparator circuit |
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| Country | Link |
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| CN (1) | CN207603590U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107769758A (en) * | 2017-12-06 | 2018-03-06 | 上海灿瑞科技股份有限公司 | A kind of comparator circuit |
-
2017
- 2017-12-06 CN CN201721679339.4U patent/CN207603590U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107769758A (en) * | 2017-12-06 | 2018-03-06 | 上海灿瑞科技股份有限公司 | A kind of comparator circuit |
| CN107769758B (en) * | 2017-12-06 | 2024-03-22 | 上海灿瑞科技股份有限公司 | Comparator circuit |
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