CN207602977U - A kind of semiconductor laser module - Google Patents
A kind of semiconductor laser module Download PDFInfo
- Publication number
- CN207602977U CN207602977U CN201721432118.7U CN201721432118U CN207602977U CN 207602977 U CN207602977 U CN 207602977U CN 201721432118 U CN201721432118 U CN 201721432118U CN 207602977 U CN207602977 U CN 207602977U
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- cathode sheets
- cathode
- solder
- heat sink
- laser chip
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Abstract
The utility model discloses a kind of semiconductor laser module, which includes：Micro-channel heat sink (1), laser chip (2), insulated rubber film (3), the first cathode sheets (4) and the second cathode sheets (5)；Wherein, the anode of the laser chip (2) is weldingly connected with the micro-channel heat sink (1) by the first solder, the cathode of the laser chip (2) is weldingly connected with first cathode sheets (4) by the second solder, first cathode sheets (4) are connected with second cathode sheets (5), and the insulated rubber film (3) is set between second cathode sheets and the micro-channel heat sink.The utility model is compared with traditional wire bonding mode, apply for that the packaging method of embodiment is simple for process, the contact area by way of solder connection is big with the first cathode sheets for the cathode of laser chip simultaneously, rapid heat dissipation, be not in situation about being burnt due to device caused by broken string, improve the stability and reliability of device.
Description
Technical field
The utility model belongs to laser testing field, belongs to a kind of semiconductor laser module.
Background technology
At present, semiconductor laser module can be divided into microchannel water cooling, macro channel water-cooling and conduction by the type of cooling
Cooling.Wherein water-cooling semiconductor laser module in microchannel includes micro-channel heat sink, laser chip, insulated rubber film and cathode
Piece, wherein laser chip anode are connected with micro-channel heat sink, and laser chip cathode is connected with cathode sheets by wire bonding, insulation
Glued membrane is set between cathode sheets and micro-channel heat sink, plays insulating effect.But since laser chip power is big, by electricity
Current density is big, traditional microchannel water-cooling semiconductor laser module in use it occur frequently that the situation of wire breaking,
So as to cause burning for device, the reliability of device has been seriously affected.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of semiconductor laser modules and its packaging method, use
In overcome the prior art the shortcomings that.
It is as follows that the utility model solves the technical solution that above-mentioned technical problem is taken：
A kind of semiconductor laser module, the module include：Micro-channel heat sink (1), laser chip (2), insulated rubber film
(3), the first cathode sheets (4) and the second cathode sheets (5)；Wherein, the anode of the laser chip (2) and the micro-channel heat sink
(1) it is weldingly connected by the first solder, the cathode of the laser chip (2) passes through the second solder with first cathode sheets (4)
It is weldingly connected, first cathode sheets (4) are connected with second cathode sheets (5), and the insulated rubber film (3) is set to described
Between two cathode sheets and the micro-channel heat sink.
Preferably, first cathode sheets are connected with second cathode sheets by way of crimping.
Preferably, first solder is slicken solder.
Preferably, second solder is slicken solder.
Preferably, the micro-channel heat sink is suppressed by the anaerobic copper foil for being carved with microchannel.
The utility model applies for that the packaging method of embodiment is simple for process, simultaneously compared with traditional wire bonding mode
The contact area by way of solder connection is big with the first cathode sheets for the cathode of laser chip, rapid heat dissipation, is not in due to disconnected
The situation that device caused by line is burnt improves the stability and reliability of device.The cathode sheets of wire bonding mode are one section
Formula, the application is two-part, and the first cathode sheets are connect by welding with laser chip, improve the reliability of device；Second
Cathode sheets are connect by crimping mode with the first cathode sheets, convenience simple for process.
Other features and advantages of the utility model will illustrate, also, in the following description partly from specification
In become apparent or understood by implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is realized and is obtained in the specification, claims and attached drawing write.
Description of the drawings
The utility model is described in detail below in conjunction with the accompanying drawings, so that the above-mentioned advantage of the utility model is more
Clearly.Wherein,
Fig. 1 is the structure diagram of the utility model semiconductor laser module；
Fig. 2 is the schematic diagram of the part-structure of the utility model semiconductor laser module；
Fig. 3 is the schematic diagram of the part-structure of the utility model semiconductor laser module；
Fig. 4 is the schematic diagram of the part-structure of the utility model semiconductor laser module.
Specific embodiment
The embodiment of the utility model is described in detail below with reference to accompanying drawings and embodiments, whereby to the utility model
How applied technology method solves technical problem, and the realization process for reaching technique effect can fully understand and implement according to this.
If it should be noted that do not form conflict, each feature in each embodiment and each embodiment in the utility model
It can be combined with each other, the technical solution formed is within the protection scope of the utility model.
As shown in Figs 1-4, the embodiment of the present application provides a kind of semiconductor laser module, which includes：Microchannel
Heat sink 1, laser chip 2, insulated rubber film 3, the first cathode sheets 4 and the second cathode sheets 5.
In the embodiment of the present application, 2 anode of laser chip is weldingly connected with 1 cathode of micro-channel heat sink by the first solder, micro-
It 1 is suppressed by the oxygen-free copper for being carved with microchannel that channel is heat sink, due to laser chip coefficient of thermal expansion and oxygen-free copper thermal expansion
Coefficient differs greatly, and to reduce the generation of stress, the first solder is preferably slicken solder in the embodiment of the present application, can be that indium base welds
Material or tin solder.
In the embodiment of the present application, 2 cathode of laser chip is weldingly connected with the first cathode sheets 4 by the second solder, it is preferable that
Second solder is slicken solder, can be indium-based solder or tin solder.The side that 2 and first cathode sheets 4 of laser chip pass through welding
Formula is connected, and contact area is big, rapid heat dissipation, is conducive to electric current and passes through, and so as to reduce the generation of thermal resistance, improves the effect of laser
Rate.Simultaneously compared to the mode of more traditional wire bonding, avoid since device is burnt caused by wire breaking, so as to improve
The stability of device.
In the embodiment of the present application, insulated rubber film 3 is two-sided all to have viscosity, after the insulated rubber film back side is pasted on micro-channel heat sink
End, 4 rear end of the first cathode sheets is pasted on the positive front end of insulated rubber film 3, after the second cathode sheets 5 are pasted on 3 front of insulated rubber film
On end, 4 rear end of the first cathode sheets contacts with each other with 5 front end of the second cathode sheets, while is since the second cathode sheets rear end is pasted on
The active force of insulated rubber film allows the first cathode sheets to be connected by way of crimping with the second cathode sheets.Due to laser chip
Width very little, the length of the first cathode sheets directly influence whether the welding effect of cathode, to improve 2 and first cathode of laser chip
4 welding performance of piece, the length of the first cathode sheets is the smaller the better, and in the embodiment of the present application, the length of the first cathode sheets is less than half
Heat sink length, the length of the second cathode sheets is more than the length of heat sink half, while the length of the first cathode sheets and the second cathode
The sum of length of piece is more than heat sink length.Insulated rubber film plays insulating effect, for prevent the first cathode sheets or the second cathode sheets with
It is heat sink to be in contact.Cathode sheets are the scale copper of surface gold-plating in the embodiment of the present application.
The embodiment of the present application additionally provides a kind of packaging method of semiconductor laser module, the method includes：
The front end of laser chip anode and micro-channel heat sink is welded together by the first solder；
First cathode sheets and the laser chip cathode are welded together by the second solder, wherein first cathode
Piece is not attached to the micro-channel heat sink；
Insulated rubber film is pasted into the rear end with the micro-channel heat sink；
Second cathode sheets are pasted on the insulated rubber film, wherein first cathode sheets and the second cathode sheets phase
Even.
Further, first cathode sheets are connected with second cathode sheets by way of crimping.
Further, first solder is slicken solder.
Further, second solder is slicken solder.
The utility model applies for that the packaging method of embodiment is simple for process, simultaneously compared with traditional wire bonding mode
The contact area by way of solder connection is big with the first cathode sheets for the cathode of laser chip, rapid heat dissipation, is not in due to disconnected
The situation that device caused by line is burnt improves the stability and reliability of device.The cathode sheets of wire bonding mode are one section
Formula, the application is two-part, and the first cathode sheets are connect by welding with laser chip, improve the reliability of device；Second
Cathode sheets are connect by crimping mode with the first cathode sheets, convenience simple for process.
Finally it should be noted that：The above descriptions are merely preferred embodiments of the present invention, is not limited to this
Utility model, although the utility model is described in detail with reference to the foregoing embodiments, for those skilled in the art
For, it can still modify to the technical solution recorded in foregoing embodiments or to which part technical characteristic
Carry out equivalent replacement.Within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on,
It should be included within the scope of protection of this utility model.
Claims (5)
1. a kind of semiconductor laser module, which is characterized in that the module includes：Micro-channel heat sink (1), laser chip (2), absolutely
Edge glued membrane (3), the first cathode sheets (4) and the second cathode sheets (5)；Wherein, the anode of the laser chip (2) and the microchannel
Heat sink (1) is weldingly connected by the first solder, and the cathode of the laser chip (2) passes through second with first cathode sheets (4)
Solder is weldingly connected, and first cathode sheets (4) are connected with second cathode sheets (5), and the insulated rubber film (3) is set to institute
It states between the second cathode sheets and the micro-channel heat sink.
2. semiconductor laser module as described in claim 1, which is characterized in that first cathode sheets are cloudy with described second
Pole piece is connected by way of crimping.
3. semiconductor laser module as described in claim 1, which is characterized in that first solder is slicken solder.
4. semiconductor laser module as described in claim 1, which is characterized in that second solder is slicken solder.
5. semiconductor laser module as described in claim 1, which is characterized in that the micro-channel heat sink is by being carved with microchannel
Anaerobic copper foil suppress.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721432118.7U CN207602977U (en) | 2017-10-31 | 2017-10-31 | A kind of semiconductor laser module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721432118.7U CN207602977U (en) | 2017-10-31 | 2017-10-31 | A kind of semiconductor laser module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207602977U true CN207602977U (en) | 2018-07-10 |
Family
ID=62758548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721432118.7U Active CN207602977U (en) | 2017-10-31 | 2017-10-31 | A kind of semiconductor laser module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207602977U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658692A (en) * | 2017-10-31 | 2018-02-02 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor laser module and its method for packing |
| CN112490844A (en) * | 2020-11-26 | 2021-03-12 | 苏州长光华芯光电技术股份有限公司 | Bar laser packaging structure and preparation method thereof |
-
2017
- 2017-10-31 CN CN201721432118.7U patent/CN207602977U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658692A (en) * | 2017-10-31 | 2018-02-02 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor laser module and its method for packing |
| CN112490844A (en) * | 2020-11-26 | 2021-03-12 | 苏州长光华芯光电技术股份有限公司 | Bar laser packaging structure and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 215163 No.2 workshop-1-102, No.2 workshop-2-203, zone a, industrial square, science and Technology City, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Address before: 215163 No.2 factory building, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |