CN207492755U - A kind of photographic device and Portable multiple spectrum camera shooting and display equipment - Google Patents
A kind of photographic device and Portable multiple spectrum camera shooting and display equipment Download PDFInfo
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- CN207492755U CN207492755U CN201720325776.XU CN201720325776U CN207492755U CN 207492755 U CN207492755 U CN 207492755U CN 201720325776 U CN201720325776 U CN 201720325776U CN 207492755 U CN207492755 U CN 207492755U
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Abstract
The utility model provides a kind of photographic device and Portable multiple spectrum camera shooting and display equipment.The Portable multiple spectrum images and shows integration of equipments photographic device and display device in one, and the photographic device includes：First imaging sensor, for responding the light radiation of the first spectral band and acquiring its image information；Second imaging sensor is set to the side of described first image sensor, for responding the light radiation of the second spectral band and acquiring its image information；The light radiation image of first band in incident light is focused on described first image sensor, focuses on the light radiation image of second band on second imaging sensor by lens system.Lens system and two imaging sensors share same optical axis.By the digital processing and comparison to two band images, the utility model accurately can detect and show the accurate location of veins beneath the skin and shape and can avoid blood vessel in operation or special processing is done to blood vessel.
Description
Technical field
The utility model is related to the image capture device fields of multiple spectrum more particularly to a kind of apply to examine in medical image
One is shown to the photographic device of infrared ray and visible image capturing and with the photographic device in disconnected and treatment and with visible ray
The picture pick-up device of change.
Background technology
The structure and tissue of inside of human body are that human eye cannot be directly viewed.Rely solely on the exterior contour and human body of human body
Anatomical knowledge is difficult to accurately find and positions subcutaneous internal structure and organize.
Human vas is hidden in below the epidermis, is often blocked by subcutaneous fat or even bone, in the environment of visible ray
It is extremely faint from the reflected visible image signal of subcutaneous tissue, and it is mingled with scattering optical noise and various phantom, even
It is completely not visible for human eye.Although before puncture, doctor often may require that patient clench fist or with pat site of puncture skin
The mode of skin allows blood vessel more as it can be seen that still according to the factors such as the age of patient, the thickness of subcutaneous fat, veins beneath the skin it is visual
Property is still very undesirable.According to the blood-vessel image and medical knowledge to may be seen indistinctly, the puncture done to blood vessel often misplaces, leads
It causes a disease the pain of patient, delay treatment opportunity or even causes injection accident.In addition to the blood drawing directly done to blood vessel and injection with
Outside, the operations such as acupuncture and other medical operatings are required for accurately knowing the position of blood vessel, to avoid blood vessel in operation
Or special processing is done to blood vessel.The vein blood vessel image enhancement instrument currently existed is by the near red of the vein blood vessel of intake
Outer image is projected directly into human skin surface with visible ray again.Complicated optical system must be used in order to reduce bit errors
As possible so that infrared photography and visible ray projection are answered on same optical axis so as to cause optical system and mechanical servo
Miscellaneous, volume and weight is all excessively huge, and power consumption, is not suitable for portable medical diagnosis and the application of wider market.
Utility model content
For the defects in the prior art, the purpose of this utility model is to provide a kind of photographic device and integrated mostly light
The photographic device of spectrogram picture and the Portable multiple spectrum camera shooting of real-time displaying device and display equipment.The multispectral camera shooting and display
Equipment is so as to overcome difficulty of the prior art, and in outdoor, the occasion of small space and no urban electricity supply also can be accurate
The position of blood vessel really is detected and shows, to avoid blood vessel in operation or special processing to be done to blood vessel.
One side according to the present utility model, provides a kind of photographic device, and the photographic device includes：First image passes
Sensor, for responding the light radiation of first kind spectrum or wave-length coverage and acquiring its image information；Second imaging sensor and
The overlapped either phase mutual one of described first image sensor is spaced the light for responding the second class spectrum or wave-length coverage
It radiates and acquires its image information；Lens system, is set to the incident side of described first image sensor, and the lens system will
The light radiation image of first kind spectrum or wave-length coverage in the incident radiation of its incident side focuses on described first image
Second image sensing is focused on sensor, by the second class spectrum in incident light or the light radiation image of wave-length coverage
On device.According to the structure and relative position of above-mentioned each device or parts, the lens system, the first imaging sensor and
The optical axis of second imaging sensor can be coincided together with very high registration accuracy naturally.
Optionally, the photographic device is by the image and the second class spectrum or wave of the first kind spectrum of acquisition or wave-length coverage
The image of long range is output to the flat-panel monitor that the equipment carries after treatment, with the visible spectrum of observer or wavelength model
The image enclosed is shown.
Optionally, the photographic device further includes optical filter, the optical filter be set to described first image sensor and
Between second imaging sensor, the first kind finished is not yet absorbed for stop described first image sensor light emission side
The light radiation of spectrum or wave-length coverage.
It spaced can set between described first image sensor, optical filter and the second imaging sensor, also may be used
Three to be fitted closely together with optical cement.In order to improve optical transmittance, the light refractive index choosing of the optical cement used
The average value or difference selected close proximity to the light refractive index at two fitting interfaces are less than or equal to 0.25.
Optionally, the photographic device further includes polaroid, the polaroid be set to described first image sensor and
Between second imaging sensor or the light incident surface of the first imaging sensor is set to, for filtering the infrared ray of scattering.
Optionally, described first image sensor has been used including being made in CMOS in crystalline silicon substrate or CCD type
Image sensor element, the crystalline silicon substrate reduce the thickness of substrate will pass through near infrared ray by reduction process.
Optionally, described first image sensor has been used including the non-crystalline silicon (amorphous to visible ray sensitivity
Silicon) film or amorphous selenium (amorphous selenium) film graphics sensing element, second imaging sensor
The infrared image sensor of CMOS or CCD type including silicon metal are used；
Optionally, either amorphous selenium film visible images sensing element is formed in glass or knot to above-mentioned amorphous silicon membrane
Crystal silicon or other can penetrate near infrared ray substrate on；And the CMOS or CCD infrared image sensing elements of the silicon metal
It is formed in crystalline silicon substrate.
Optionally, above-mentioned amorphous silicon membrane or amorphous selenium film visible images sensing element are formed directly into the knot
On crystal silicon CMOS or CCD infrared image sensor, and positioned at the incident side of the CMOS or CCD infrared image sensors.
Optionally, above-mentioned photographic device further includes one first insulating layer, and first insulating layer is set to the non-crystalline silicon
Between thin-film device and CMOS the or CCD infrared image sensors, the first imaging sensor and the second imaging sensor are done
Complete electrical isolation.
Optionally, the picture signal of the amorphous silicon membrane in above-mentioned first imaging sensor or amorphous selenium film passes through non-
The selection and scanning of the thin film transistor (TFT) of crystal silicon or polysilicon (TFT) switch arrays, are output to peripheral circuit.
Optionally, the picture signal of the amorphous silicon membrane in above-mentioned first imaging sensor or amorphous selenium film passes through system
CMOS the CCD circuits made in crystalline silicon substrate are read and are output to external circuit.CMOS the CCD circuits and
Second imaging sensor shares same crystalline silicon substrate.
The amorphous silicon thin film device includes multiple visible images detection pixel units, and each visible images are visited
It surveys pixel unit and includes multiple visible images detection sub-pixel；The CMOS infrared image sensors or CCD infrared images pass
Sensor includes multiple infrared view detection pixel units.
Each visible images detection sub-pixel include a components of photo-electric conversion such as photodiode and one with
The non-crystalline silicon of the photodiode electrical connection or polycrystalline SiTFT switch.
The photodiode includes：Be oppositely arranged respectively as cathode and the first transparent conductive film and of anode
Two transparent conductive films；And the photodiode of p-i-n structure：Including p-type heavily doped layer, undoped semiconductor layer and N-shaped
Heavily doped layer is set between first transparent conductive film and second transparent conductive film, and with described first thoroughly
Bright conductive film and second transparent conductive film electrical connection, transparent are led by first transparent conductive film and described second
Conductive film applies it reverse bias voltage.According to hydrogen content and fault in material density, effective forbidden band of the non-doped layer
Width is 1.6eV~2.1eV.According to visible absorption coefficient, ideal thickness is 1.5 μm~2.2 μm.Dynamic as needed
The rising morning of range and dark current reads, and the reverse bias voltage can be selected between -5V to -10V.The amorphous silicon membrane
Transistor switch includes a drain electrode and source electrode, the source electrode are electrically connected with second transparent conductive film.
Each infrared view detection pixel unit includes：Substrate；Light-to-current inversion charge saves layer, is set to described
Crystalline silicon substrate is close to the side of the amorphous silicon thin film device；Charge transfer layer is set to the crystalline silicon substrate close to institute
State the side of amorphous silicon thin film device；Second insulating layer is set to the crystalline silicon substrate close to the amorphous silicon thin film device
Side, and cover light-to-current inversion charge savings layer, the charge transfer layer and the crystalline silicon substrate；Transmit grid
Layer, is set to side of the second insulating layer far from the crystalline silicon substrate, positioned at first insulating layer and described second
Between insulating layer.
Each pixel of first imaging sensor includes more than two for the response of the light of special spectrum or wave band
Sub-pixel, particularly include the situation including tri- sub-pixels of RGB.Color can not also be distinguished, each sub-pixel is right
The light radiation response of same spectrum or wave band.Sub-pixel is to pass through covering for the light response of special spectrum or wave band
Colored filter on sub-pixel is reached.As a kind of special case, the filbtercharacteristic on each sub-pixel makes one
Sample or all colored filters of removal, such first imaging sensor just can only output gray level picture signal.
Other side according to the present utility model, can select to allow as needed the pixel size of the second imaging sensor
Equal to the sub-pixel size of the first imaging sensor, it can also select to allow each pixel size of the second imaging sensor to be equal to the
The pixel size for each including a plurality of sub-pixels of one imaging sensor.It even can select to allow the picture of the second imaging sensor
Plain size is equal to the size of a plurality of first image sensor pixels.The above arrangement is to eliminate first and the to reach
The Moire fringe that interference fringe between two image sensor arrays is namely commonly called as.These are arranged, and can also be reached to first
With the opposite adjustment of the image resolution ratio and signal strength of the second imaging sensor.
Other side according to the present utility model provides a kind of Portable multiple spectrum camera shooting and display equipment, described to set
It is standby to include：One ontology；One photographic device as described above, the side of the ontology；Multiple light sources, the light source are taken the photograph around described
As device；And a display screen, the opposite side of the ontology is set to, the display screen is shown to be acquired according to the photographic device
The infrared line pattern information and visible light pattern information arrived.
Optionally, the Portable multiple spectrum camera shooting and display equipment further include：One extinction shoulder, the extinction shoulder are set
The side of the ontology is placed in, surround the photographic device, between the photographic device and the light source, the extinction shoulder
Platform completely cuts off the linear light path between the light source and the photographic device.
Optionally, the Portable multiple spectrum camera shooting and display equipment further include at least one handle, and the handle connects institute
Ontology is stated, the handle is internally provided with accommodating space, and the accommodating space is equipped with power supply and control circuit, the control circuit
The power supply, photographic device, light source and display screen are connected respectively.
In view of this, the Portable multiple spectrum of the utility model images and shows equipment by the structure or group of inside of human body
It knits for information about, with bidimensional, three-dimensional even dynamic image is direct and shows in real time, substantially increases veins beneath the skin
It is visual so that human eye can be observed directly and in real time, can accurately know the position of blood vessel, blood can be avoided when easy to operation
Pipe does blood vessel special processing, helps to carry out diagnose and treat to the internal structure and tissue of human body.
Description of the drawings
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other spies of the utility model
Sign, objects and advantages will become more apparent upon：
Fig. 1 is a kind of structure diagram of photographic device of the utility model；
Fig. 2 is the structure diagram of another photographic device of the utility model；
Fig. 3 is the structure diagram of another photographic device of the utility model；
Fig. 4 is the visible images detected pixel on the first imaging sensor of another photographic device of the utility model
Unit and infrared view detection pixel unit to bitmap；
Fig. 5 is first imaging sensor of another photographic device of the utility model and the structure of the second imaging sensor
Schematic diagram；
Fig. 6 is the visible images detected pixel on the first imaging sensor of another photographic device of the utility model
Unit and infrared view detection pixel unit to bitmap；
Fig. 7 is a kind of Portable multiple spectrum camera shooting of the utility model and the structure diagram of display equipment；
Fig. 8 is the side view of the Portable multiple spectrum camera shooting and display equipment in Fig. 7；
Fig. 9 is that the Portable multiple spectrum camera shooting of the utility model and display equipment are showing infrared image and x-ray image
Picture.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that this practicality is new
The design of example embodiment fully and completely, and comprehensively will be communicated to those skilled in the art by type.It is identical in figure
Reference numeral represent same or similar structure, thus repetition thereof will be omitted.
Described feature, structure or characteristic can be incorporated in one or more embodiments in any suitable manner
In.In the following description, many specific implementation details are provided so as to provide the abundant reason to the basic conception of the utility model
Solution.However, one of ordinary skill in the art would recognize that, without one or more in specific detail or using other methods,
Constituent element, material etc. can also put into practice the basic conception and technical solution of the utility model.In some cases, it is not shown in detail
Or description known features, material or operation are to avoid fuzzy the utility model.
The technology contents of the utility model are described further with reference to the accompanying drawings and examples.
Fig. 1 is referred to, it illustrates a kind of structure diagrams of photographic device of the utility model.As shown in Figure 1, at this
In the embodiment of utility model, which includes：First imaging sensor 11, the second imaging sensor 12 and lens system
System 13.
First imaging sensor 11 includes pel array, signal processing unit and scanning circuit, is used to respond the first kind
The light radiation of wave-length coverage simultaneously acquires its image information.In the utility model embodiment, the light radiation of first kind wave-length coverage
It is visible ray.That is, the first imaging sensor 11 is a visible light image sensor.First imaging sensor 11 is responded from 400nm
The visible wavelength of light of human eye in the range of to 760nm.To in the wave-length coverage, the relatively good semi-conducting material of response characteristic it
First, silicon.
First imaging sensor 11 includes the components of photo-electric conversion, which can be amorphous silicon hydride or amorphous
The semiconductor films membrane module such as selenium or oxide semiconductor.The semiconductor film membrane module is driven by thin film transistor (TFT) array, and half
Conductor thin film device and thin film transistor (TFT) array are formed on one and can penetrate on the substrate of infrared ray.For example, the photoelectricity becomes
Change the electronics gesture in the photodiode either CCD device that element can be in crystalline silicon substrate and cmos device makes together
Trap.Or it is prepared on the photodiode film of the PIN structural of amorphous silicon hydride on glass substrate.First imaging sensor
11 number of pixels can be in the relatively low resolutions such as HVGA (320X240) to FHD (1028X780) and more high image resolution
It is any.Respective colored filter is both provided in each pixel of first imaging sensor 11, it is hereby achieved that colored
Image.
In the embodiment of the utility model, the first imaging sensor 11 is produced in a crystalline silicon substrate.It needs to illustrate
, after the first imaging sensor is formed, the substrate of the silicon wafer forms sufficiently thin but not shadow by wafer thinning process
Ring the light-to-current inversion of visible images, the base plate bottom being stored and read out.Its act on be by useless crystalline silicon substrate as far as possible
It is thinned, infrared ray is reduced to the greatest extent in the crystalline silicon substrate of the first imaging sensor 1 (visible light image sensor) with this
Absorption loss water, optionally, thickness be less than 10 microns.
Second imaging sensor 12 includes pel array, signal processing unit and scanning circuit, is set to the first image
The light emission side of sensor 11, for responding the light radiation of the second class wave-length coverage and acquiring its image information.In the utility model
In embodiment, the light radiation of the second class wave-length coverage is infrared ray.That is, the second imaging sensor 12 can be made in crystallization for one
CMOS or CCD infrared imaging sensors on silicon substrate.Second imaging sensor 12 can be directed to the infrared ray for needing to respond
Radiation, selects suitable semiconductor probe pel array.For the near infrared radiation from 760nm to 1100nm, can use
The photodiode being formed in a crystalline silicon substrate.Its benefit is that relevant electricity can be formed on a piece of crystalline silicon substrate
Lotus storage, amplification, scanning and signal and noise processing circuit.And response wave can be used for the infrared ray (MWIR) of medium wavelength
Length is until the vulcanized lead (PbS) or response wave length of 3um is until materials such as the lead selenides (PbSe) of 5um.For more long wavelength's
Infra-red radiation (such as radiation of more than the 10um in thermal imaging) can use the mode of bolometer (Bolometer).At this
A little occasions, the storage of charge are amplified, scanning, and the processing circuit of signal and noise is just necessarily dependent upon the silicon being fabricated separately and integrates
Circuit or the MEMS device being integrated in energy conversion element and circuit on silicon chip.
As shown in Figure 1, lens system 13 is set to the incident side of described first image sensor, the lens system utilizes
The difference of the refractive index of visible ray and infrared ray in the medium focuses on the visible images 31 in the incident light of its incident side
Second figure is focused on the components of photo-electric conversion of described first image sensor 11, by the infrared view 32 in incident light
As sensor 12 the components of photo-electric conversion on.In the embodiment shown in fig. 1, lens system 13 is an infrared ray and visible ray
The lens system of dual-purpose.It should be noted that, although it illustrate only a lens in Fig. 1, but this does not represent the utility model
It is only limited to using single lens, which can be the optical system for having plural lenses.
In the alternative embodiment of the utility model, lens system 13, the first imaging sensor 11 and the second image pass
The optical axis coincidence of sensor 12.I.e. as shown in Figure 1, lens system 13, the first imaging sensor 11 and the second imaging sensor 12
Optical axis all on same optical axis 30.So as to entire photographic device optical system can be made fairly simple, volume compared with
It is small, also, visible images 31 and infrared view 32 be substantially entirely it is point-to-point accurately align together with, avoid and work as
Three be same light path when caused by optically with the error on later image image procossing.
Further, in the alternative embodiment of the utility model, which further includes optical filter 14.Optical filter 14
It is set between the first imaging sensor 11 and the second imaging sensor 12, for stopping 11 light emission side of the first imaging sensor
The light radiation (not yet absorbing the visible ray finished) of the first kind wave-length coverage finished is not yet absorbed, so as to, it is ensured that into the
The light radiation of two imaging sensors 12 is all sightless infrared radiation.In the embodiment shown in fig. 1, the first image sensing
Spaced setting between device 11,14 and second imaging sensor 12 of optical filter.It should be noted that in the utility model
In other embodiments, if if the first imaging sensor 11 can be implemented the visible absorption of the overwhelming majority at these
The optical filter 14 can also be omitted in example, it will not be described here.
Further, in other alternative embodiments of the utility model, which can further include polaroid.
The polaroid is set between the first imaging sensor 11 and the second imaging sensor 12 or the polaroid is set to first
The light incident surface of imaging sensor 11, for the infrared ray of the scattering of 11 light emission side of filtered first image sensor, so that
Second imaging sensor 12 can obtain the infrared view being more clear.
Fig. 2 is another embodiment of the photographic device of the utility model, refers to Fig. 2, it illustrates this practicalities
The structure diagram of novel another photographic device.Unlike above-mentioned photographic device shown in FIG. 1, in this embodiment
In, it is fitted between described first image sensor and the optical filter by the first optical cement, second imaging sensor
It is fitted between the optical filter by the second optical cement.In the embodiment depicted in figure 2, the first optical cement 151 is set to
Between one imaging sensor 11 and optical filter 14, the two is bonded；Second optical cement 152 is set to the second imaging sensor
It is bonded between 12 and optical filter 14, to the two.Wherein, in order to make into the second imaging sensor 12 infrared radiation most
Greatly, therefore, the thickness for the first optical cement 151 and the second optical cement 152 and its there are one being needed to the refractive index of infrared ray
Rational range of choice.
Further, in order to reduce multipath reflection and suction of the light in the first optical cement 151 and the second optical cement 152
It receives.In the alternative embodiment of the utility model, the refractive index of the infrared ray of the first optical cement 151 should be passed with the first image as possible
Refractive index of the sensor 11 close to 151 side of the first optical cement approaches.Optionally, the infrared refraction rate of the first optical cement 151 with
11 light-emitting surface of the first imaging sensor and the difference of the average value of the refractive index of optical filter 14 that it is in direct contact are less than or equal to
0.25.For example, if the first imaging sensor 11 is when making hydrogenation non crystal silicon film on the glass substrate, the first optical cement
151 refractive index should approach, for example difference is less than with the average value of the glass substrate light-emitting surface and the refractive index of optical filter 14
Equal to 0.25.Similarly, the refractive index of the infrared ray of the second optical cement 152 should be as possible with the second imaging sensor 12 close to second
The refractive index of 152 side of optical cement approaches.Optionally, the filter that the infrared refraction rate of the second optical cement 152 is in direct contact with it
The difference of the average value of the refractive index of 12 incidence surface of mating plate and the second imaging sensor is less than or equal to 0.25, which can be real
Existing effect similar to the above embodiments, it will not be described here.
Fig. 3 to Fig. 5 is another embodiment of the photographic device of the utility model, please also refer to Fig. 3 to Fig. 5,
The visible ray figure on structure diagram, the first imaging sensor which respectively show another photographic device of the utility model
As detection pixel unit and infrared view detection pixel unit pass bitmap and the first imaging sensor and the second image
The structure diagram of sensor.Wherein, Fig. 3 can be understood as a kind of simplification embodiment of above-mentioned embodiment illustrated in fig. 1.With above-mentioned figure
Unlike photographic device shown in 1, the semiconductor film membrane modules of the components of photo-electric conversion as the first imaging sensor 11 by
Thin film transistor (TFT) array drives and is formed directly on an insulating film (such as first insulating layer 16 in Fig. 3), the insulating film
It is formed directly on the second imaging sensor.In this embodiment, the first imaging sensor 11 is amorphous silicon thin film device.Second
Imaging sensor 12 is CMOS infrared image sensors or CCD infrared image sensors.Wherein, amorphous silicon thin film device forms institute
It states on CMOS infrared image sensors or CCD infrared image sensors, and red positioned at the CMOS infrared image sensors or CCD
The incident side of outer imaging sensor.In other words, it is that the first imaging sensor 11 is integrated in the second image to pass in this embodiment
On sensor 12.I.e. by hydrogenation non crystal silicon film (a-SiH) direct formation of film at surface silicon wafer CMOS infrared image sensors or CCD
Above infrared image sensor.
Specifically, the pixel of each sub-pixel of the pel array of the second imaging sensor and the first imaging sensor
The sub-pixel of N number of number of array is corresponding and spatially coincidence is overlapping, and N is greater than or equal to 1.As shown in figure 4, the amorphous
Silicon thin film device includes multiple visible images detection pixel units 18, and each visible images detection pixel unit includes multiple
Visible images detect sub-pixel 181.The CMOS infrared image sensors or CCD infrared image sensors include multiple infrared
Line image detection pixel unit 19.In the embodiment shown in fig. 4, each visible images detection pixel unit 18 can by three
See that light image detection sub-pixel 181 forms, three visible images detection sub-pixels 181 are respectively red sub-pixel, green
Pixel and blue subpixels.Wherein, each infrared view detection pixel unit 19 and a visible images detect sub- picture
Element 181 is corresponding.It should be noted that infrared view detection pixel unit 121 detects sub-pixel with visible images herein
112 it is corresponding both refer to flush (as shown in Figure 4) along two boundaries in the incident direction of light, avoided with this in infrared image
The upper interference figure (namely Moire fringe) occurred between two pel arrays.
In the embodiment shown in fig. 5, each visible images detection sub-pixel 181 includes a photodiode and one
The amorphous silicon film transistor switch being electrically connected with the photodiode.Wherein, photodiode is as just the light of visible ray
Electric transducer part can be the P-I-N photodiodes of a-SiH.
Specifically, which mainly includes：The first transparent conductive film 111, second being oppositely arranged is transparent
Conductive film 112, p-type heavily doped layer and N-shaped heavily doped layer (being depicted without in figure) and non-doped layer 113.This three-layer thin-film
Stack up and be referred to simply as PIN photodiode.As shown in figure 5, non-doped layer 113 is set to the first transparent conductive film
111 and second between transparent conductive film 112, and is electrically connected with the first transparent conductive film 111 and the second transparent conductive film 112
It connects.First transparent conductive film 111 and the second transparent conductive film 112 apply a reverse bias voltage to non-doped layer 113.
In the alternative embodiment of the utility model, effective energy gap of non-doped layer 113 is 1.6eV~2.1eV, and thickness is 1.0 μm
~2.2 μm.Reverse bias voltage is -5V~-10V.And then the non-doped layer 113 can convert most of visible ray
Into electronics and it is stored on the capacitance of the photodiode.And in the range of the energy gap, wavelength is more than
The absorption of the infrared light of 760nm can be ignored.When being opened amorphous silicon film transistor TFT switch, charge just by
The external charge amplifier being connected with the data line of amorphous silicon film transistor TFT switch is integrated and is amplified.
Amorphous silicon film transistor switch includes at least a source electrode.Second electrically conducting transparent of source electrode and PIN photodiode
Film is electrically connected.It is illustrated by taking the amorphous silicon film transistor TFT switch of a bottom grating structure as an example in Fig. 5, but other structures
Thin film switch can also be applied.Specifically, as shown in figure 5, amorphous silicon film transistor switch is by film 115,116,118
With 119 compositions.Film 116 be conductive metal layer, as amorphous silicon film transistor switch source electrode and drain electrode.Film 115
Channel semiconductor for non-crystalline silicon.Film 119 is the control grid of amorphous silicon membrane transistor switch, can be metal or
Polysilicon membrane.Film 118 is the gate insulating layer of amorphous silicon membrane transistor switch.
Each infrared view detection pixel unit 19 includes：Crystalline silicon substrate 120, light-to-current inversion charge savings layer 121,
Charge transfer layer 122, second insulating layer 123 and transmission grid layer 124.Light-to-current inversion charge savings layer 121 is set to crystallization
Silicon substrate 120 is close to the side of amorphous silicon thin film device.Charge transfer layer 122 is set to crystalline silicon substrate 120 close to non-crystalline silicon
The side of thin-film device.Second insulating layer 123 is set to crystalline silicon substrate 120 close to the side of amorphous silicon thin film device, and covers
Lid light-to-current inversion charge savings layer 121, charge transfer layer 122 and crystalline silicon substrate 120.Transmission grid layer 124 is set to the
Two sides of the insulating layer 123 far from crystalline silicon substrate 120, between the first insulating layer 16 and second insulating layer 123.Wherein,
Light-to-current inversion charge savings layer 121, charge transfer layer 122 and transmission grid layer can pass through semiconductor integrated circuit and photoelectricity
The technique of diode.
Further, visible ray 31 incident when the thickness of the non-doped layer of amorphous silicon hydride 113 is more than 1.5um
It is almost completely absorbed in non-doped layer 113, however amorphous silicon hydride of the energy gap more than 1.6eV is for more than 760nm
Infrared ray 32 be nearly free from absorption.Incident infrared ray 32 passes through non-doped layer 113 and reaches the second image biography in this way
Light-to-current inversion and charge the savings layer 121 of sensor.The electron-hole pair being converted into layer 121 is saved in light-to-current inversion charge,
By electric field it is separated after store.When cut-in voltage is applied to the control grid (film of amorphous silicon film transistor switch
119) when on, the charge stored in the photodiode is delivered to external preamplifier, such as charge integration amplification
Device does further signal processing.As a same reason, transmission grid layer 124 will be stored in light-to-current inversion after the raceway groove of FET is opened
The external circuit that is transmitted electronically in the potential well of charge savings layer 121 does further signal processing.That is, implement herein
In example, by the way that the first imaging sensor is integrated on the second imaging sensor, the advantage of integrated circuit is taken full advantage of, so as to
The photographic device is allow to obtain the visible images compared with hi-vision resolution and signal-to-noise ratio.Lamination-type shown in fig. 5 it is infrared and
Visible image capturing chip can absorb the picture signal of infrared ray and visible ray simultaneously, it is no longer necessary to which additional infrared ray blocks filter
The optical filter that wave plate or visible ray block.Visible image capturing usually requires RGB coloured silks film so as to separating color signal.RGB coloured silk films
The infrared light for being more than 760nm can also not only be accomplished substantially thoroughly with the luminous ray through a wavelength range
It is bright, ensure that incident infrared ray can reach the infrared image sensor positioned at chip bottom with this.
Further, in the embodiment shown in fig. 3, the photographic device further includes one first insulating layer 16.First absolutely
Edge layer 16 is set to the first imaging sensor 11 (amorphous silicon thin film device), and (CMOS infrared images pass with the second imaging sensor 12
Sensor or CCD infrared image sensors) between, it is electrically insulated to the first imaging sensor 11 and the second imaging sensor 12,
So as to reduce the parasitic capacitance that capacitive couplings between the two generate, signal cross-talk caused by avoiding the parasitic capacitance with this with
And the increase of the switching noise (KTC noise) based on capacitance.It should be noted that in the embodiment of the utility model, this
The thickness and dielectric constant of one insulating layer 16 should consider to reduce above-mentioned parasitic capacitance as possible, also to consider to reduce infrared ray to the greatest extent
Multiple reflections between film.The chemical composition and membrance casting condition of light refractive index (related to dielectric constant) and insulating film
Closely related, this will not be repeated here.
Further, in other implementations of the utility model, semiconductor film membrane module can also be formed directly into
On two imaging sensors, wherein, it controls the selecting switch of the picture signal of the semiconductor film membrane module, signal amplification circuit and makes an uproar
Sound reduces circuit, is produced in same crystalline silicon substrate with the second imaging sensor.The embodiment can also be realized similar
Effect, it will not be described here.
In the above-described embodiments, it is fully sharp by the way that the first imaging sensor is directly integrated on the second imaging sensor
With the advantage of integrated circuit, so as to which the photographic device be allow to obtain the visible ray figure compared with hi-vision resolution and signal-to-noise ratio
Picture.
In addition, in Fig. 3 to embodiment shown in fig. 5, since infrared view detection pixel unit 121 is monochromatic.
And then in this embodiment, the spatial resolution on some direction of the second imaging sensor 12 is the first imaging sensor 11
Three times.Since the signal of infrared view is fainter, in order to strengthen the signal of infrared view, therefore, two images pass
The contraposition of the pixel and pixel of sensor or the sub-pixel of several visible rays correspond to the sub-pixel of an infrared light, than
As tri- sub-pixels of RGB correspond to one infrared sub-pixel 60.Fig. 6 is referred to, the another kind it illustrates the utility model is taken the photograph
As device the first imaging sensor on visible images detection pixel unit and infrared view detection pixel unit pair
Bitmap.Unlike above-mentioned photographic device shown in Fig. 4, each infrared view detection pixel unit and a visible ray figure
As detection pixel unit is corresponding.As shown in fig. 6, infrared view detection pixel unit 19 and visible images detected pixel list
Member 18 is corresponding, and then, it can avoid occurring two pixels on infrared image while the signal for strengthening infrared view
Interference figure between array.
It should be noted that from the perspective of the interference fringe between image is prevented, if visible light image sensor
Number of pixels be infrared image sensor number of pixels integral multiple, the alignment of each infrared image element and visible light pixel
It is all completely equivalent.Can be to avoid occurring the interference figure between two pel arrays on infrared image, it will not be described here.
Fig. 7 is a kind of Portable multiple spectrum camera shooting of the utility model and the structure diagram of display equipment.Fig. 8 is Fig. 7
In Portable multiple spectrum camera shooting and display equipment side view.As shown in FIG. 7 and 8, one side according to the present utility model,
A kind of Portable multiple spectrum camera shooting and display equipment are provided, including：One photographic device 1, multiple light including at least non-visible light
2 and one panel display screen 4 of source.Photographic device 1 is above-mentioned Fig. 1 to photographic device shown in fig. 6.Multiple light sources 2 are around camera shooting
Device 1, light source 2 include an at least infrared light supply.With reference to shown in Fig. 7, multiple light sources 2 are with photographic device 1 for center of circle center pair
It placed 8 with claiming.In this 8 light sources 2 can be white visible light source (such as：LED light source).Panel display screen 4 can be with
It is liquid crystal display or self luminous OLED display, is not limited.Panel display screen 4 is shown to be adopted according to photographic device 1
Collect and the image information of the light radiation of first kind wave-length coverage (visible ray as described above) that is processed or merging
With the light radiation image information of the second class wave-length coverage (infrared ray as described above).
The suction of near infrared light of the hemoglobin to wavelength from 760nm to 1000nm in blood vessel is mainly utilized in the utility model
Then the different principle of other tissues of yield and surrounding, the near-infrared image that will absorb blood vessel first carry out image procossing
It is shown jointly with the image of visible ray afterwards, the exact position (infrared line pattern information) of blood vessel network etc. is added to operator's meat
On the image (visible light pattern information) that eye is observed that, a kind of visual Overlay is realized.In other application
In example, translucent image and relevant text information can also be added on blood vessel network infrared image, realized
The effect of the augmented reality of another visual superposition, but not limited to this.By using the utility model, greatly improve
The visuality of veins beneath the skin or internal internal organs, can be accurate on the video pictures outside conventional patient's body on medical
See the blood vessel network of patient's body in ground.
The Portable multiple spectrum camera shooting of the utility model and display equipment further include an ontology 5, one handle 7 and extinction shoulder
Platform 6, but not limited to this.Ontology 5 include the first face and with corresponding second face in the first face.First face sets photographic device
1 and light source 2, the second face setting panel display screen 4.By the way that photographic device 1 and panel display screen 4 are remotely distinguished as possible
The opposite two sides of photographic device ontology 5 is arranged on, to reduce the interference that the light of panel display screen 4 acquires ontology 3 video.Hand
Handle 7 connects ontology 5, and 7 surface of handle has control panel.The inside of handle 7 is additionally provided with accommodating space, is set in the accommodating space
There are power supply and control circuit.Control circuit connects above-mentioned power supply, control panel respectively, and photographic device, light source and tablet are shown
Display screen.
Between photographic device 1 and light source 2, extinction shoulder 6 completely cuts off between light source 2 and photographic device 1 extinction shoulder 6
Linear light path.The outer surface of extinction shoulder 6 is coated with light absorbent.Extinction shoulder 6 is that a surface has absorbable spurious rays to apply
The step or fence structure of layer, ensure that the light from the lamp source 2 on periphery can not be directly entered picture pick-up device, to improve video
The contrast of picture, brightness improve picture quality.
Fig. 9 is that Portable multiple spectrum images and show equipment in display infrared image and the picture of x-ray image.The infrared figure
As that can be captured in real-time or historical data.The image of X ray is then the historical data of the subject.Although
Infrared image is not projected directly into human skin surface, but in medical procedure, injection needle, acupuncture needle, doctor
Finger, scale and probe can be filmed and are shown in simultaneously the tablet at the portable instrument back side by photographic device 1
On display screen, so as to convenient, position that is quick and relatively accurately finding the tissues such as blood vessel and bone, and implement to prick
Needle, injection, drop, the operation of the medical treatments such as acupuncture and massage.In other application, such as detection consumption electronic product and vapour
In the coating analytic process of the uniformity and accident trace of vehicle surface paint, metope and paint, operating personnel then can be straight
It connects and draws infrared and X-ray image profile on subject surface with pen.Then infrared, ultraviolet or X-ray shadow is painted with to surface
The object of picture implements the operations such as reparation.The handle of the instrument both can directly be held, and can also be fixed on a board.It is this
Detection can be that single human body or parts are implemented, can also be to the production on production line after being fixed on a board
Product do no triage and test.
To sum up, the Portable multiple spectrum camera shooting of the utility model and display equipment are by the structure of inside of human body or tissue
For information about, with bidimensional, three-dimensional even dynamic image directly displays out, and substantially increase veins beneath the skin or internal internal organs can
Depending on property so that human eye can be observed directly and in real time, can accurately know the position of blood vessel, blood vessel can be avoided when easy to operation
Or special processing is done to blood vessel, help to carry out diagnose and treat to the internal structure and tissue of human body.
The basic conception of the utility model and specific several embodiments are described above.Need exist for statement
It is that the utility model is not limited to above-mentioned particular implementation, those skilled in the art can be within the scope of the claims
Various deformations or amendments are made, this has no effect on the substantive content of the utility model.The utility model is also not limited to this practicality
For the ease of illustrating the described medical image application of basic conception in novel, also include the application such as work of other field certainly
Industry product and environment measuring, the quality testing of multi-sheet printed and multilayer spray painting judge humans and animals by veins beneath the skin map
Game and commercial activity of identity, Virtual Space and augmented reality etc..
Claims (14)
1. a kind of photographic device, which is characterized in that the photographic device includes：
First imaging sensor, including pel array, signal processing unit and scanning circuit, for responding first kind wave-length coverage
Light radiation and acquire the first kind wave-length coverage light radiation its image information；
Second imaging sensor including pel array, signal processing unit and scanning circuit, is set to described first image sensing
The light emission side of device, for responding the light radiation of the second class wave-length coverage and acquiring the volume light radiation of the second class wave-length coverage
Image information；
One lens system, is set to the incident side of described first image sensor, and the lens system is by the incidence of its incident side
The light radiation image of the first kind wave-length coverage in light focused on described first image sensor, by the institute in incident light
The light radiation image for stating the second class wave-length coverage is focused on second imaging sensor, and the lens system, the first figure
As sensor and the optical axis coincidence of the second imaging sensor.
2. photographic device as described in claim 1, which is characterized in that the photographic device further includes optical filter, the optical filtering
Piece is set between described first image sensor and second imaging sensor, for stopping described first image sensor
The light radiation of the first kind wave-length coverage of light emission side.
3. photographic device as claimed in claim 2, which is characterized in that between described first image sensor and the optical filter
It is fitted by the first optical cement, is fitted between second imaging sensor and the optical filter by the second optical cement.
4. photographic device as claimed in claim 3, which is characterized in that the infrared refraction rate of first optical cement and its institute
The difference of the light-emitting surface for the described first image sensor being in direct contact and the average value of the refractive index of the optical filter be less than etc.
In 0.25.
5. photographic device as claimed in claim 3, which is characterized in that the infrared refraction rate of second optical cement is straight with it
The difference of the average value of the refractive index of the incidence surface of the optical filter of contact and second imaging sensor is less than or equal to
0.25。
6. photographic device as described in claim 1, which is characterized in that the photographic device further includes polaroid, the polarisation
Piece is set between described first image sensor and second imaging sensor.
7. photographic device as described in claim 1, which is characterized in that the light radiation of the first kind wave-length coverage be wavelength from
0.4 micron to 0.76 micron of visible ray；The light radiation of the second class wave-length coverage is wavelength from 0.76 micron to 10 micron
Infrared light.
8. photographic device as described in claim 1, which is characterized in that described first image sensor production is in a silicon wafer chip base
On plate, the silicon wafer substrate is handled by thinning, and average thickness is less than 10 microns.
9. photographic device as described in claim 1, which is characterized in that described first image sensor includes light-to-current inversion member
Part, the components of photo-electric conversion are semiconductor film membrane module, the semiconductor film membrane module for amorphous silicon hydride or amorphous selenium or
Oxide semiconductor；Second imaging sensor is CMOS the or CCD infrared image sensings being made in a crystalline silicon substrate
Device.
10. photographic device as claimed in claim 9, which is characterized in that the semiconductor film membrane module is by thin film transistor (TFT) battle array
Row are driven, and the semiconductor film membrane module and the thin film transistor (TFT) array be formed on one can through infrared ray
On substrate.
11. photographic device as claimed in claim 9, which is characterized in that the semiconductor film membrane module is by thin film transistor (TFT) battle array
Row drive and are formed directly on an insulating film, and the insulating film is formed directly on second imaging sensor.
12. photographic device as claimed in claim 9, which is characterized in that the semiconductor film membrane module is formed directly into described
On second imaging sensor, wherein, control the selecting switch of the picture signal of the semiconductor film membrane module, signal amplification circuit and
Noise-reducing circuit is produced on second imaging sensor in same crystalline silicon substrate.
13. photographic device as described in claim 1, which is characterized in that the pel array of second imaging sensor it is every
A sub-pixel is all corresponding with the sub-pixel of N number of number of the pel array of described first image sensor and spatially overlaps
It is overlapping, wherein, N is for positive integer and more than or equal to 1.
14. a kind of Portable multiple spectrum camera shooting and display equipment, it is characterised in that：The Portable multiple spectrum camera shooting and display are set
It is standby to include：
One ontology；
Just like the photographic device described in any one of claim 1 to 13, positioned at the side of the ontology；
Including at least the multiple light sources of a non-visible light sources, the light source is located at photographic device side and around the camera shooting
Device；And
One panel display screen, is set to the opposite side of the ontology, and panel display screen visible ray is shown according to described more
Spectrum photographic device collects and the image information and of the light radiation of first kind wave-length coverage that is processed or merging
The light radiation image information of two class wave-length coverages.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720325776.XU CN207492755U (en) | 2017-03-30 | 2017-03-30 | A kind of photographic device and Portable multiple spectrum camera shooting and display equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720325776.XU CN207492755U (en) | 2017-03-30 | 2017-03-30 | A kind of photographic device and Portable multiple spectrum camera shooting and display equipment |
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| Publication Number | Publication Date |
|---|---|
| CN207492755U true CN207492755U (en) | 2018-06-15 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720325776.XU Expired - Fee Related CN207492755U (en) | 2017-03-30 | 2017-03-30 | A kind of photographic device and Portable multiple spectrum camera shooting and display equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107007260A (en) * | 2017-03-30 | 2017-08-04 | 展谱光电科技（上海）有限公司 | A kind of camera device and Portable multiple spectrum shooting and display device |
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2017
- 2017-03-30 CN CN201720325776.XU patent/CN207492755U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107007260A (en) * | 2017-03-30 | 2017-08-04 | 展谱光电科技（上海）有限公司 | A kind of camera device and Portable multiple spectrum shooting and display device |
| CN107007260B (en) * | 2017-03-30 | 2023-05-16 | 展谱光电科技（上海）有限公司 | Image pickup device and portable multispectral image pickup and display equipment |
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