CN207398110U - A kind of wafer location structure for reducing film defects - Google Patents

Abstract

The utility model provides a kind of wafer location structure for reducing film defects, the location structure includes being supported on the electrostatic pallet (electrostatic chuck) of the bottom and is arranged on the shelter (process kit) of crystal round fringes, the shelter with set on the contact surface of the electrostatic pallet it is fluted；Can also hollow structure be set in the shelter.The utility model passes through the groove and/or the hollow structure, the heat transfer of the shelter can be reduced, there is shelter and the situation of its own face film stripping so as to avoid the shelter rapid drop in temperature, in this way, the film of crystal column surface growth can also be from the damage of overburden.

Description

A kind of wafer location structure for reducing film defects

Technical field

The utility model is related to technical field of manufacturing semiconductors, are positioned more particularly to a kind of wafer for reducing film defects Structure.

Background technology

With the rapid development of semiconductor technology, the number of transistors that can be carried on one single chip increases with surprising rapidity It is long, at the same time, semiconductor makers for it is cost-effective need urgently to wish to accommodate on single wafer it is more Chip.This trend has promoted being substantially reduced for feature sizes of semiconductor devices, and correspondingly also chip manufacturing process is proposed Higher requirement, one of them challenging problem are exactly to high-aspect-ratio (to be defined as the depth and width in gap Ratio) gap non-porous filling capacity.

Before this, the universal using plasma enhancing chemical vapor deposition (PECVD) in most of chip factories carries out dielectric Filling.This technique has good filling perforation effect for the interval for being more than 0.8 micron, however for being less than 0.8 micron Interval can generate pinch off when having the interval of high depth-to-width ratio with the filling of one step of pecvd process in midseptum.

It has been born during how exploration meets the filling in high-aspect-ratio gap and control production cost simultaneously highly dense Plasma chemical vapor deposition (HDP CVD) technique is spent, HDP CVD techniques since the advent of the world is by its uniqueness in high density Synchronously depositing and etch the reaction process of dielectric in plasm reaction cavity realizes at a lower temperature to high-aspect-ratio The excellent filling at interval, the dielectric insulating film deposited has many advantages, such as high density, low impurity defect, while has to silicon chip excellent Good adhesive capacity, therefore, since HDP CVD techniques are used by advanced chip factory since the 1990s mid-term, To rapidly become 0.25 micron many advantages, such as its remarkable porefilling capability, the deposit quality of stabilization, reliable electrology characteristic The mainstream of following advanced technologies.

But thing followed film defects are also unavoidable in HDP CVD technical process, are particularly crystal round fringes Shelter (process kit) caused by film defects, since its size is big, and cannot be utterly destroyed, to yield It influences very big.The source of this defect is as follows：(do not give as shown in Figure 1, carrying out film on 2 surface of wafer using plasma Diagram) deposition while, can also deposit one on the shelter 12 (for crystal round fringes to be supported with positioning) of crystal round fringes Layer film 3, since the electrostatic pallet 11 (electrostatic chuck) for being supported on bottom is with the shelter 12 Contact, and cooling system (not illustrated) is provided in electrostatic pallet 11, when electrostatic pallet 11 is in the cooling of cooling system During lower cooling, the temperature of the shelter 12 contacted therewith also can drastically decline, can so cause shelter 12 with its from 3 phase of film on body surface is removed, and the film 3 after stripping drops from 12 surface of shelter, in the airflow function of chamber indoor gas Under, the film 3 of stripping may fall on the film on 2 surface of wafer, and 2 surface film of wafer is caused to form large-sized defect. Such as the electron micrograph that Fig. 2 is the crystal column surface film with large scale defect.

Therefore it provides a kind of wafer location structure that can reduce film defects is necessary.

Utility model content

In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of reduction film defects Wafer location structure, it is bad and cause wafer table for solving shelter and its own surface film adhesiveness in the prior art There is large scale defect in long film of looking unfamiliar.

In order to achieve the above objects and other related objects, the utility model provides a kind of wafer positioning for reducing film defects Structure, the wafer location structure include being supported on the electrostatic pallet of the bottom and are arranged on the masking knot of crystal round fringes Structure, the shelter with set on the contact surface of the electrostatic pallet it is fluted.

A kind of structure of optimization of the wafer location structure of film defects, the shelter are reduced as the utility model In be provided with hollow structure.

A kind of structure of optimization of the wafer location structure of film defects, the hollow structure are reduced as the utility model In be arranged to vacuum.

A kind of structure of optimization of the wafer location structure of film defects is reduced as the utility model, in the hollow knot It is also filled up in structure with heat-barrier material, wherein, the pyroconductivity of the heat-barrier material is less than the heat of the material of the shelter Conductivity.

A kind of structure of optimization of the wafer location structure of film defects, the heat-barrier material are reduced as the utility model For ceramic fibre, calcium silicates or aluminium silicate composite.

A kind of structure of optimization of the wafer location structure of film defects, the hollow structure are reduced as the utility model Cross sectional shape be rectangle.

A kind of structure of optimization of the wafer location structure of film defects is reduced as the utility model, the groove is cut Face shape is rectangle.

A kind of structure of optimization of the wafer location structure of film defects, the electrostatic pallet are reduced as the utility model For aluminium material.

A kind of structure of optimization of the wafer location structure of film defects, the electrostatic pallet are reduced as the utility model With cooling system.

A kind of structure of optimization of the wafer location structure of film defects, the shelter are reduced as the utility model For ceramic material.

As described above, the wafer location structure of the reduction film defects of the utility model, has the advantages that：

1st, groove is set on the contact surface of the shelter and the electrostatic pallet, institute can be reduced by the groove The contact area between shelter and the electrostatic pallet is stated, so as to reduce the heat transfer of the shelter, and then is avoided The shelter rapid drop in temperature and there is the situation that shelter and its surface film are removed, the film of crystal column surface It would not be damaged be subject to overburden.

2nd, by increasing hollow structure in the shelter, the heat transfer of the shelter is reduced, so as to avoid The shelter rapid drop in temperature and there is the situation that shelter and its surface film are removed, the film of crystal column surface It would not be damaged be subject to overburden.

3rd, by the groove and/or hollow structure, prevent the shelter temperature rapid decrease, can extend described The service life of shelter.

Description of the drawings

Fig. 1 is shown as the semi-section schematic diagram of wafer location structure of the prior art.

Fig. 2 is shown as the electron micrograph of the crystal column surface film with large scale defect in the prior art.

Fig. 3 is shown as the semi-section schematic diagram of the wafer location structure of the utility model.

Fig. 4, which is shown as the defects of crystal column surface film before and after the utility model sets groove quantitative comparison, to scheme.

Component label instructions

11 electrostatic pallets

12 shelters

121 grooves

122 hollow structures

2 wafers

3 films

Specific embodiment

Illustrate the embodiment of the utility model by particular specific embodiment below, those skilled in the art can be by this Content disclosed by specification understands other advantages and effect of the utility model easily.

Refer to attached drawing.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only coordinating The revealed content of specification, so that those skilled in the art understands and reads, being not limited to the utility model can be real The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size It is whole, in the case where not influencing the effect of the utility model can be generated and the purpose that can reach, should all still fall in the utility model institute The technology contents of announcement are obtained in the range of covering.Meanwhile in this specification it is cited as " on ", " under ", "left", "right", The term of " centre " and " one " etc. is merely convenient to understanding rather than to limit the enforceable scope of the utility model for narration, Its relativeness is altered or modified, in the case where changing technology contents without essence, when being also considered as the enforceable scope of the utility model.

As shown in figure 3, the utility model provides a kind of wafer location structure for reducing film defects, the wafer positioning knot Structure includes at least the electrostatic pallet 11 for being supported on 2 bottom of wafer and the shelter 12 for being arranged on 2 edge of wafer, described to cover Shield structure 12 on the contact surface of the electrostatic pallet 11 with setting fluted 121.

It should be noted that the electrostatic pallet 11 is that the wafer 2, electrostatic pallet are supported by electrostatic adsorption Also the heating element (not illustrated) heated to wafer 2 is embedded in 11, when utilization HDP CVD techniques are in wafer When 2 surfaces carry out film growth, certain temperature environment can be provided, at the same the electrostatic pallet 11 itself also have it is very high Temperature.There are cooling system, such as water cooling system in the electrostatic pallet 11, it, can be to the electrostatic by cooling system Pallet 11 cools down.

The shelter 12 (process kit) is arranged on the edge of the wafer 2, and the wafer 2 can be carried out Edge positions；The masking to other component in cavity is can be used for, other component in cavity is avoided to plate film.As shown in figure 3, The shelter 12 has step, and when carrying out technique, directly 2 edge of wafer is placed on step, while described in utilization Electrostatic pallet 11 carries out absorption fixation to wafer.

As an example, as shown in figure 3, the cross sectional shape of the groove 121 can be rectangle, it is of course also possible to be other Suitable shape, as long as contact area between the shelter 12 and the electrostatic pallet 11 can will be reduced.In addition, The quantity of the groove 121 is also unlimited, and in the present embodiment, as shown in figure 3, the groove 121 is 2, i.e. side and bottom surface is each One.Contact area between the shelter 12 and the electrostatic pallet 11 can be reduced by the groove 121, reduced The heat transfer of the shelter 12 avoids 12 surface film of shelter from departing from and drop to 2 surface of wafer.

As an example, it is provided with hollow structure 122 in the shelter 12.The cross sectional shape of the hollow structure 122 Can be rectangle, it is of course also possible to be other suitable shapes, such as circular, triangle etc., it is not limited herein.In addition, The quantity of the hollow structure 122 is also unlimited, in the present embodiment, as shown in figure 3, set in the shelter 12 it is described in Hollow structure 122 is 3.

As an example, could be provided as vacuum condition in the hollow structure 122 or in the hollow structure 122 Filling has heat-barrier material, wherein, the pyroconductivity of the heat-barrier material is less than the pyroconductivity of the material of the shelter, The heat-barrier material can be ceramic fibre, calcium silicates or aluminium silicate composite etc., unlimited herein.Wherein, in described In hollow structure vacuum condition or filling with insulation material, purpose is set to be provided to avoid the temperature of the shelter 12 rapid Decline and the shelter 12 and its own face film is caused to depart from.

As an example, the material of the electrostatic pallet 11 is aluminium material, the material of the shelter 12 is ceramic material. Certainly, in other embodiments, the electrostatic pallet 11 and shelter 12 can also be other suitable materials, herein not Limit.

Be illustrated in figure 4 set groove 121 before and after 2 surface film of wafer the defects of quantitative comparison scheme, wherein top Broken line represents to set the defects of wafer film before groove 121 quantity, and the broken line of lower section represents to set the wafer 2 after groove 121 The defects of surface film quantity.As can be seen that after setting the groove 121, the defects of 2 surface film surface of wafer, number is significantly It reduces, improves film yield.

In conclusion the utility model provides a kind of wafer location structure for reducing film defects, the location structure bag Include the electrostatic pallet (electrostatic chuck) for being supported on the bottom and the shelter for being arranged on crystal round fringes (process kit), the shelter with set on the contact surface of the electrostatic pallet it is fluted；It can also be covered described Hollow structure is set in shield structure.The utility model can reduce the masking by the groove and/or the hollow structure There is shelter and is removed with its own face film so as to avoid the shelter rapid drop in temperature in the heat transfer of structure Situation, therefore the film of crystal column surface will not also be damaged be subject to overburden.

So the utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.

The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model God and all equivalent modifications completed under technological thought or change, should be covered by the claim of the utility model.

Claims (10)

1. a kind of wafer location structure for reducing film defects, which is characterized in that the wafer location structure includes being supported on institute State the electrostatic pallet of bottom and be arranged on the shelter of the crystal round fringes, the shelter with the electrostatic support It is set on the contact surface of disk fluted.

2. the wafer location structure according to claim 1 for reducing film defects, it is characterised in that：In the shelter It is provided with hollow structure.

3. the wafer location structure according to claim 2 for reducing film defects, it is characterised in that：In the hollow structure It is arranged to vacuum.

4. the wafer location structure according to claim 2 for reducing film defects, it is characterised in that：In the hollow structure In also fill up with heat-barrier material, wherein, the pyroconductivity of the heat-barrier material is less than the heat biography of the material of the shelter Conductance.

5. the wafer location structure according to claim 4 for reducing film defects, it is characterised in that：The heat-barrier material is Ceramic fibre, calcium silicates or aluminium silicate composite.

6. the wafer location structure according to claim 2 for reducing film defects, it is characterised in that：The hollow structure Cross sectional shape is rectangle.

7. the wafer location structure according to claim 1 for reducing film defects, it is characterised in that：The section of the groove Shape is rectangle.

8. the wafer location structure according to claim 1 for reducing film defects, it is characterised in that：The electrostatic pallet is Aluminium material.

9. the wafer location structure according to claim 1 for reducing film defects, it is characterised in that：The electrostatic pallet tool There is cooling system.

10. the wafer location structure according to claim 1 for reducing film defects, it is characterised in that：The shelter For ceramic material.