CN207353258U - Dielectric film and dielectric layer structure - Google Patents
Dielectric film and dielectric layer structure Download PDFInfo
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- CN207353258U CN207353258U CN201721271650.5U CN201721271650U CN207353258U CN 207353258 U CN207353258 U CN 207353258U CN 201721271650 U CN201721271650 U CN 201721271650U CN 207353258 U CN207353258 U CN 207353258U
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 87
- 239000003989 dielectric material Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims description 71
- 239000004411 aluminium Substances 0.000 claims description 55
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 55
- 229910052782 aluminium Inorganic materials 0.000 claims description 55
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 50
- 239000010936 titanium Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 30
- 239000010955 niobium Substances 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 23
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 238000000231 atomic layer deposition Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052735 hafnium Inorganic materials 0.000 claims description 14
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052746 lanthanum Inorganic materials 0.000 claims description 14
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 14
- 229910052758 niobium Inorganic materials 0.000 claims description 14
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 14
- 238000003475 lamination Methods 0.000 claims description 13
- HVXCTUSYKCFNMG-UHFFFAOYSA-N aluminum oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[Al+3] HVXCTUSYKCFNMG-UHFFFAOYSA-N 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 4
- DNXNYEBMOSARMM-UHFFFAOYSA-N alumane;zirconium Chemical compound [AlH3].[Zr] DNXNYEBMOSARMM-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 42
- 238000000034 method Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 12
- 229910001928 zirconium oxide Inorganic materials 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 108010028930 invariant chain Proteins 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
The utility model, which provides a kind of dielectric film and dielectric layer structure, the dielectric film, to be included：Basal plane, it is formed with some hydroxyls (OH keys)；And binary or polynary dielectric film are in an ALD layer, including the Part I chemisorbed by the hydroxyl (OH keys) on the first presoma and the basal plane and react the electric dielectric material that lures formed, and by the hydroxyl (OH keys) on the second presoma and the basal plane Part II chemisorbed and react the tracking-resistant stream dielectric material formed.The flow model of the utility model can slow down the phenomenon of capacitance reduction, the characteristic of Low dark curient can also be substantially improved, so as to optimize the capacitance characteristic of dielectric layer structure.
Description
Technical field
The utility model belongs to field of semiconductor manufacture, more particularly to a kind of dielectric film and dielectric layer structure.
Background technology
With size micro, high dielectric constant material substitutes traditional silica (SiO2) dielectric layer, it can not only tie up
Hold enough driving currents, and can keep same equivalent oxidated layer thickness (equivalent oxide thickness,
EOT the actual physics thickness of oxide layer, the sub- tunneling effect of effective inhibitory amount are increased in the case of).
Though high dielectric constant material is with higher dielectric constant, higher capacitance, its energy gap is relatively narrow, has
The shortcomings that height electric leakage, so solving the problems, such as the problem of high electric leakage is urgent at this stage.
A kind of preparation method of existing high dielectric constant material as shown in Figure 1, provide a substrate 101, in described first
Dielectric substance 102 is lured on substrate.
But though single high dielectric constant material with higher dielectric constant, it usually has higher electric leakage,
Therefore, it is usually described to lure dielectric substance and the dielectric material of tracking-resistant to be alternately distributed use, as shown in Fig. 2, providing first
One substrate 101, dielectric substance 102 is lured in being formed on the substrate；Then, lure formation on dielectric substance 102 anti-described
The dielectric material 103 of electric leakage, to lure the drain conditions of dielectric substance 102 described in suppression.However, the medium material of this tracking-resistant
Material, its dielectric constant is usually relatively low, can cause the reduction of the dielectric constant of overall dielectric layer.
Although what the above method can obtain Low dark curient to a certain extent lures dielectric substance, it need to be by two layers of Jie
Material, which overlaps, to be formed, and causing its thickness to need to be designed to, comparison is thick, is caused it to sacrifice the capacitance of a part, is unfavorable for
The reduction of equivalent oxide thickness, hinders the micro of device size.
Based on the above, there is provided a kind of Low dark curient and low thickness lure dielectric material structure and preparation method thereof to belong in fact
It is necessary.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of dielectric film, dielectric
Rotating fields and production method, for solving the problems, such as to lure in the prior art, electric dielectric layer structure leakage current is larger or thickness is larger.
In order to achieve the above objects and other related objects, the utility model provides a kind of production method of dielectric film, institute
Stating production method includes step：1) basal plane is provided；2) in formation hydroxyl (OH keys) on the basal plane；And 3) in the basal plane
Upper progress atomic layer deposition (Atomic Layer Deposition, ALD), is successively passed through including before the first presoma and second
At least two presomas of body are driven, the Part I of first presoma being first passed through and the hydroxyl (OH keys) produces chemistry
Adsorb and react formation and lure electric dielectric material, after the Part II of second presoma that is passed through and the hydroxyl (OH keys) produce
It is biochemical to adsorb and react to form tracking-resistant stream dielectric material, to form the binary of high-k and tracking-resistant stream or polynary
Dielectric film is in an ALD layer.
Preferably, the Part II of the hydroxyl (OH keys) accounts for the Part I of the hydroxyl (OH keys) and described second
The ratio for the summation divided is 5%~40%, to ensure that it has while reducing the binary or polynary dielectric film leakage current
High-k.
Preferably, first presoma forms group including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of group combination of the above, second presoma include aluminium (Al) and silicon (Si) form one kind in group or
Two kinds.
Further, in step 3), it is zirconium (Zr) particle that first presoma, which is selected, and second presoma, which is selected, is
Aluminium (Al) particle, is first passed through zirconium (Zr) particle, makes the hydroxyl of the zirconium (Zr) particle and Part I (OH keys) generationization
Learn and adsorb and react, be then passed directly into the aluminium (Al) particle, make the hydroxyl of the aluminium (Al) particle and Part II
(OH keys) produces chemisorbed and reacts, with formation aluminium-zirconium oxide (ZrAlOx) dielectric film on the basal plane.
Preferably, step 3) atom layer deposition process (ALD) use condition include using process pressure scope for 0.1~
2torr, process temperature range are 200~400 DEG C.
Preferably, the thickness range of the step 3) binary or polynary dielectric film is 4~10nm.
Preferably, in step 2), by water (H2) or ozone (O O3) importing make positioned at the base surface reaction generation
The hydroxyl (OH keys).
The utility model also provides a kind of production method of dielectric layer structure, including step：1) substrate is provided, in described
Substrate surface forms the first hydroxyl (OH keys), is passed through the first source of the gas, and first source of the gas is produced with first hydroxyl (OH keys)
Chemisorbed is simultaneously reacted, and electric dielectric layer is lured to be formed；2) the second hydroxyl (OH keys) is formed on electric dielectric layer in described lure, and carried out
Atomic layer deposition, is successively passed through at least two presomas including the first presoma and the second presoma, described be first passed through
The Part I of one presoma and second hydroxyl (OH keys), which produces chemisorbed and reacts formation, lures electric dielectric material, rear logical
The Part II of second presoma entered and second hydroxyl (OH keys), which produces chemisorbed and reacts, forms tracking-resistant
Dielectric material is flowed, to form the binary of high-k and tracking-resistant stream or polynary dielectric film in an ALD layer；
And 3) trihydroxy (OH keys) is formed in the binary or polynary dielectric film surface, and it is passed through second source of the gas, described the
Two sources of the gas produce chemisorbed with the trihydroxy (OH keys) and react, to form tracking-resistant stream dielectric layer.
Preferably, first source of the gas forms group including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of combination of the above, second source of the gas include aluminium (Al) and silicon (Si) and form one kind or two in group
Kind.(element code lacks Chinese)
Preferably, further included before electric dielectric layer is lured described in formation：Tetrahydroxy (OH is formed in the substrate surface
Key), titanium (Ti) particle is passed through, the Ti particles produce chemisorbed and react with the tetrahydroxy (OH keys) forms titanium oxide
(TiOx) film, to lure the adhesion property of electric dielectric layer and the substrate described in raising.
Further, further included before electric dielectric layer is lured described in formation：Formed on the titanium oxide (TiOx) film
Several are by luring the lamination that electric base dielectric layer and tracking-resistant stream base dielectric layer are formed.
The utility model also provides a kind of dielectric film, including：Basal plane, it is formed with some hydroxyls (OH keys)；And two
First or polynary dielectric film is in an ALD layer, including by the hydroxyl (OH keys) on the first presoma and the basal plane
Part I chemisorbed and react the electric dielectric material that lures of formation, and by the hydroxyl on the second presoma and the basal plane
The Part II chemisorbed of base (OH keys) and the tracking-resistant stream dielectric material for reacting formation.
Preferably, the Part II of the hydroxyl (OH keys) accounts for the Part I and the institute of the hydroxyl (OH keys)
The ratio for stating the summation of the hydroxyl (OH keys) of Part II is 5%~40%, is leaked with reducing the binary or polynary dielectric film
Electric current simultaneously ensures it with high-k at the same time.
Preferably, first presoma forms group including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of group combination of the above, second presoma include aluminium (Al) and silicon (Si) form one kind in group or
Two kinds.
Further, it is zirconium (Zr) particle that first presoma, which is selected, and it is aluminium (Al) grain that second presoma, which is selected,
Son, aluminium (Al) particle is between interrupted zirconium (Zr) particle being dispersed in the ALD layer.
Preferably, the thickness range of the binary or polynary dielectric film is 4~10nm.
The utility model also provides a kind of dielectric film, including binary or polynary dielectric film, is formed in an atomic layer deposition
In lamination, the dielectric film includes aluminium-zirconium oxide (ZrAlOx) dielectric film, and zirconium (Zr) particle and aluminium (Al) particle are with layer
The ALD layer is arranged in, aluminium (Al) particle dispersedly fills up the gap between zirconium (Zr) particle on a basal plane.
Preferably, aluminium (Al) particle occupies the area of the ALD layer and is accounted for relative to the zirconium (Zr) particle
Both area according to ALD layer ratios are between 5.3%~67%.
The utility model also provides a kind of dielectric layer structure, including：Electric dielectric layer is lured, by the first source of the gas and is located at a substrate
On the first hydroxyl (OH keys) chemisorbed and react generation；Binary or polynary dielectric film, are formed in an ALD layer
In, including by the first presoma with luring the Part I chemisorbed of the second hydroxyl (OH keys) on electric dielectric layer described in simultaneously
What reaction was formed lures electric dielectric material, and by the second presoma with luring the second hydroxyl (OH keys) on electric dielectric layer described in
Part II chemisorbed and react the tracking-resistant stream dielectric material of formation；And tracking-resistant stream dielectric layer, by the second source of the gas
With trihydroxy (OH keys) chemisorbed in the binary or polynary dielectric film and reacting generation.
Preferably, first source of the gas forms group including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of combination of the above, second source of the gas include aluminium (Al) and silicon (Si) and form one kind or two in group
Kind.
Preferably, the binary or polynary dielectric film include aluminium-zirconium oxide (ZrAlOx) dielectric film, zirconium (Zr) particle
The ALD layer is arranged in aluminium (Al) particle, aluminium (Al) particle dispersedly fills up zirconium (Zr) on a basal plane with layer
Gap between particle.
Preferably, aluminium (Al) particle occupies the area of the ALD layer and is accounted for relative to the zirconium (Zr) particle
Both area according to ALD layer ratios are between 5.3%~67%.
Preferably, described lure is also formed between electric dielectric layer and the substrate by titanium (Ti) particle and tetrahydroxy (OH
Key) chemisorbed and titanium oxide (TiOx) film of formation is reacted, to lure the adhesion of electric dielectric layer and the substrate described in raising
Performance.
Further, titanium oxide (TiOx) film and described lure are also formed with several by luring electricity between electric dielectric layer
The lamination that base dielectric layer is formed with tracking-resistant stream base dielectric layer.
As described above, the dielectric film of the utility model, dielectric layer structure and production method, have the advantages that：
Chemisorbed is successively occurred using the OH keys of two kinds of precursors and substrate surface and is reacted for the utility model, due to anti-
For leakage current material precursor before deposition process ,-the OH on most of substrate produces suction-operated with high-k presoma
And react, until tracking-resistant stream material precursor starts deposition growing, reacted without enough-OH, therefore deposit anti-
The thickness of the dielectric material for the tracking-resistant stream that should go out can be also thinner than general deposit thickness, you can to obtain the anti-leakage of thinner thickness
Electricity lures dielectric material layer.The flow model of the utility model can slow down the phenomenon of capacitance reduction, can also be substantially improved
The characteristic of Low dark curient, so as to optimize the capacitance characteristic of dielectric layer structure.
Brief description of the drawings
Fig. 1~Fig. 2 is shown as the structural representation that each step of production method of dielectric layer structure of the prior art is presented
Figure.
Fig. 3~Fig. 5 is shown as the structure diagram that each step of production method of the dielectric film of the utility model is presented.
Fig. 6~Figure 10 is shown as the structural representation that each step of production method of the dielectric layer structure of the utility model is presented
Figure.
Component label instructions
101 substrates
102 lure dielectric substance
The dielectric material of 103 tracking-resistant
201 substrates
202 hydroxyls (OH keys)
203 ZrAlOx dielectric films
204 ZrOx base dielectric layers
205 AlOx base dielectric layers
206 TiOx films
207 ZrOx dielectric layers
208 AlOx dielectric layers
Embodiment
Illustrate the embodiment of the utility model below by way of specific instantiation, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints with answering
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Refer to Fig. 3~Figure 10.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, when only display is with related component in the utility model rather than according to actual implementation in illustrating then
Component count, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation
Become, and its assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Fig. 3~Fig. 5, the present embodiment provides a kind of production method of dielectric film, the production method includes step
Suddenly：
As shown in figure 3, step 1) is carried out first, there is provided a basal plane.
As an example, the basal plane can be by suitably forming the Semiconductor substrate of hydroxyl (OH keys) 202, dielectric layer, metal
Layer etc. provides, for example, the basal plane can be the surface of silicon substrate, capacitive electrode plates surface, lure dielectric substance layer surface
Or dielectric material of tracking-resistant etc., and it is not limited to above-mentioned cited example.
As shown in figure 3, step 2) is then carried out, in formation hydroxyl (OH keys) 202 on the basal plane.
As an example, by water (H2) or ozone (O O3) importing make positioned at base surface reaction generation hydroxyl (OH
Key) 202, the pressure limit of processing procedure is 0.1~2torr, and process temperature range is 200~400 DEG C.
As shown in Fig. 4~Fig. 5, step 3) is finally carried out, atomic layer deposition (Atomic Layer are carried out on the basal plane
Deposition, ALD), successively it is passed through at least two presomas including the first presoma and the second presoma, the institute being first passed through
State the Part I generation chemisorbed of the first presoma and the hydroxyl (OH keys) 202 and react formation and lure electric dielectric material,
The Part II of second presoma being passed through afterwards and the hydroxyl (OH keys) 202, which produces chemisorbed and reacts, forms anti-leakage
The dielectric material of electric current, to form the binary of high-k and tracking-resistant stream or polynary dielectric film in an ALD layer
In.
As an example, first presoma is formed including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of group combination of the above, second presoma form one kind in group including aluminium (Al) and silicon (Si)
Or two kinds.
As an example, the atom layer deposition process (ALD) that this step uses makes the binary or polynary dielectric film, adopt
Process pressure scope is 0.1~2torr, and process temperature range is 200~400 DEG C.In the present embodiment, described two are made
Process pressure scope is 1torr used by first or polynary dielectric film, and process temperature range is 300 DEG C.
As an example, the Part II of the hydroxyl (OH keys) 202 accounts for Part I and the institute of the hydroxyl (OH keys) 202
The ratio for stating the summation of second is 5%~40%, to ensure while reducing the binary or polynary dielectric film leakage current
It is with high-k.
In the present embodiment, it is zirconium (Zr) particle that first presoma, which is selected, and it is aluminium that second presoma, which is selected,
(Al) particle, is first passed through zirconium (Zr) particle, makes the hydroxyl of the zirconium (Zr) particle and Part I (OH keys) 202 generationizations
Learn and adsorb and react, be then passed directly into the aluminium (Al) particle, make the hydroxyl of the aluminium (Al) particle and Part II
(OH keys) 202 produces chemisorbed and reacts, with formation aluminium-zirconium oxide (ZrAlOx) dielectric film 203 on the basal plane.
Since aluminium oxide (AlOx) is relatively low compared to titanium oxide (TiOx)/zirconium oxide (ZrOx) its dielectric constant, forbidden band is wide
Degree is wider, has the advantages that Low dark curient.But excessive AlOx can cause effective dielectric constant to decline, thus limit the storage of its electric charge
Storage.And ZrOx has higher dielectric constant, but its energy gap is relatively narrow, has the shortcomings that high electric leakage.In order to solve to leak electricity
Problem, the thickness of capacitance dielectric layer must just increase, consequently, it is possible to can sacrifice the capacitance of part on the contrary.The utility model is adopted
Chemisorbed successively occurs with the hydroxyl (OH keys) 202 of two kinds of precursors and 201 surface of substrate and reacts, reactional equation is：O3+
Zr+Al → ZrAlOx (ZAO), since aluminium (Al) atom is before deposition process, the hydroxyl (OH keys) 202 on most of substrate 201
(such as 90% or 80% hydroxyl (OH keys) 202) has produced suction-operated and has reacted with zirconium (Zr) atom, when aluminium (Al) is former
Without enough hydroxyl (OH keys) 202 (such as only remaining 10% or 20% hydroxyl (OH keys) when son starts deposition growing
202) reaction completely therewith, therefore, the AlOx thickness that the deposition reaction of the utility model institute goes out can be also thinner than general deposit thickness,
That is the thickness of the lamination of the thickness of the ZrAlOx of the utility model ZrOx identical compared to general dielectric properties and AlOx
It is thin.The utility model can slow down the phenomenon of capacitance reduction, the characteristic of Low dark curient can also be substantially improved, so as to optimize Jie
Electric layer capacitance characteristic.
As an example, the thickness range of binary described in this step or polynary dielectric film is 4~10nm, for example, described two
The thickness of first or polynary dielectric film can be 4nm, 5nm, 6nm, 7nm8nm, 9nm, 10nm etc., can be carried out according to actual demand
Arbitrary setting.
As shown in figure 5, the present embodiment also provides a kind of dielectric film, including：Basal plane, it is formed with some hydroxyls (OH keys)
202；And binary or polynary dielectric film be in an ALD layer, including by described on the first presoma and the basal plane
The Part I chemisorbed of hydroxyl (OH keys) 202 and the electric dielectric material that lures for reacting formation, and by the second presoma and institute
State the dielectric material of the Part II chemisorbed of the hydroxyl (OH keys) 202 and the tracking-resistant stream for reacting formation on basal plane.
As an example, the Part II of the hydroxyl (OH keys) 202 accounts for described the first of the hydroxyl (OH keys) 202
Part and the ratio of the summation of the hydroxyl (OH keys) 202 of the Part II are 5%~40%, to reduce the binary or polynary
Dielectric film leakage current simultaneously ensures it with high-k at the same time.
As an example, first presoma is formed including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of group combination of the above, second presoma form one kind in group including aluminium (Al) and silicon (Si)
Or two kinds.
As an example, it is zirconium (Zr) particle that first presoma, which is selected, it is aluminium (Al) grain that second presoma, which is selected,
Son, aluminium (Al) particle is between the interrupted zirconium (Zr) particle being dispersed in the ALD layer.
As an example, the thickness range of the binary or polynary dielectric film is 4~10nm.
The present embodiment also provides a kind of dielectric film, including binary or polynary dielectric film, is formed in an atomic layer deposition
In layer, the dielectric film includes aluminium-zirconium oxide (ZrAlOx) dielectric film 203, and zirconium (Zr) particle and aluminium (Al) particle are with layer
The ALD layer is arranged in, aluminium (Al) particle dispersedly fills up the gap between zirconium (Zr) particle on a basal plane.
As an example, aluminium (Al) particle occupies the area of the ALD layer relative to the zirconium (Zr) particle
Both the area of ALD layer ratios are occupied between 5.3%~67%.
Using two kinds of precursors and the hydroxyl (OH keys) 202 on 201 surface of substrate chemisorbed successively occurs for the utility model
And react, reactional equation is：O3+ Zr+Al → ZrAlOx (ZAO), since aluminium (Al) atom is before deposition process, most of substrate
Hydroxyl (OH keys) 202 (such as 90% or 80% hydroxyl (OH keys) 202) on 201 produces suction-operated with zirconium (Zr) atom
And react, until aluminium (Al) atom starts deposition growing without enough hydroxyl (OH keys) 202 (such as only remaining 10% or
20% hydroxyl (OH keys) 202) reaction completely therewith, therefore, aluminium (Al) Ox thickness meetings that the deposition reaction of the utility model institute goes out
It is also thinner than general deposit thickness, i.e. the thickness of the ZrAlOx of the utility model zirconium identical compared to general dielectric properties
(Zr) thickness of Ox and the lamination of aluminium (Al) Ox are thin.The utility model can slow down the phenomenon of capacitance reduction, also can be significantly
The characteristic of Low dark curient is lifted, so as to optimize dielectric layer capacitance characteristic.
Embodiment 2
As shown in Fig. 6~Figure 10, the utility model also provides a kind of production method of dielectric layer structure, including step：
As shown in fig. 6, step 1) is carried out first, there is provided a substrate 201, such as the bottom electrode plate of capacitance, in the substrate 201
Upper formation hydroxyl (OH keys), is passed through titanium (Ti) particle, and the Ti particles produce chemisorbed with the hydroxyl (OH keys) and react
Titanium oxide (TiOx) film 206 is formed, the TiOx films 206 not only have higher dielectric constant, but also can effectively carry
The adhesion property of high follow-up dielectric layer structure and the substrate 201.
As shown in fig. 7, step 2) is then carried out, in forming several by luring electricity on the titanium oxide (TiOx) film 206
The lamination that base dielectric layer is formed with tracking-resistant stream base dielectric layer, it is in the present embodiment, described by luring electric base dielectric layer and anti-leakage
The lamination that electric current base dielectric layer is formed is 3, described to lure electric base dielectric layer to include zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti)
And lanthanum (La) forms oxide more than one or both of group, it is ZrOx basic units 204 to select in the present embodiment, institute
State tracking-resistant stream base dielectric layer and include aluminium (Al) and silicon (Si) and form oxide in one or both of group, in this reality
It is AlOx basic units 205 to apply selection in example.
As shown in figure 8, step 4) is then carried out, in described by luring electric base dielectric layer to be formed with tracking-resistant stream base dielectric layer
Stack surface form hydroxyl (OH keys), be passed through the first source of the gas, first source of the gas produces chemistry with the hydroxyl (OH keys) and inhales
It is attached and react, lure electric dielectric layer to be formed.
As an example, first source of the gas forms group including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of group combination of the above, in the present embodiment, described to lure electric dielectric layer to select be ZrOx layers 207.
As shown in figure 9, then carrying out step 5), hydroxyl (OH keys) is formed on electric dielectric layer in described lure, and carry out atom
Layer deposition, is successively passed through at least two presomas including the first presoma and the second presoma, before described first be first passed through
The Part I for driving body and the hydroxyl (OH keys) produces chemisorbed and reacts formation and lures electric dielectric material, after be passed through it is described
The Part II of second presoma and the hydroxyl (OH keys), which produces chemisorbed and reacts, forms tracking-resistant stream dielectric material, with
Form high-k and the binary of tracking-resistant stream or polynary dielectric film are in an ALD layer.
As an example, by water (H2) or ozone (O O3) importing make to lure electric dielectric layer surface reaction generation hydroxyl positioned at described
Base (OH keys), the pressure limit of processing procedure is 0.1~2torr, and process temperature range is 200~400 DEG C.
Atomic layer deposition (Atomic Layer Deposition, ALD) is carried out on electric dielectric layer in described lure, is successively led to
Enter at least two presomas including the first presoma and the second presoma, first presoma being first passed through and the hydroxyl
The Part I of (OH keys), which produces chemisorbed and reacts formation, lures electric dielectric material, after second presoma that is passed through and institute
The Part II for stating hydroxyl (OH keys) produces chemisorbed and reacts the dielectric material for forming tracking-resistant stream, normal to form high dielectric
Count and the binary of tracking-resistant stream or polynary dielectric film are in an ALD layer.
As an example, first presoma is formed including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of group combination of the above, second presoma form one kind in group including aluminium (Al) and silicon (Si)
Or two kinds.
As an example, the atom layer deposition process (ALD) that this step uses makes the binary or polynary dielectric film, adopt
Process pressure scope is 0.1~2torr, and process temperature range is 200~400 DEG C.In the present embodiment, described two are made
Process pressure scope is 1torr used by first or polynary dielectric film, and process temperature range is 300 DEG C.
As an example, the Part II of the hydroxyl (OH keys) accounts for the Part I and described second of the hydroxyl (OH keys)
The ratio of the summation in portion is 5%~40%, to ensure that it has while reducing the binary or polynary dielectric film leakage current
High-k.
In the present embodiment, it is zirconium (Zr) particle that first presoma, which is selected, and it is aluminium that second presoma, which is selected,
(Al) particle, is first passed through zirconium (Zr) particle, the hydroxyl of the zirconium (Zr) particle and Part I (OH keys) is produced chemistry
Adsorb and react, be then passed directly into the aluminium (Al) particle, make the hydroxyl (OH of the aluminium (Al) particle and Part II
Key) produce chemisorbed and react, with formation aluminium-zirconium oxide (ZrAlOx) dielectric film 203 on the basal plane.
As shown in Figure 10, step 6) is finally carried out, hydroxyl is formed in 203 surface of the aluminium-zirconium oxide (ZrAlOx) dielectric film
Base (OH keys), is passed through second source of the gas, second source of the gas produces chemisorbed with the hydroxyl (OH keys) and reacts, with shape
Into tracking-resistant stream dielectric layer.
As an example, second source of the gas includes aluminium (Al) and silicon (Si) forms one or both of group.At this
In embodiment, it is AlOx layer 208 that the tracking-resistant stream dielectric layer, which is selected,.
The alternate ZrOx base dielectric layers 204 of the utility model are opposite with the manufacture craft of the lamination of AlOx base dielectric layers 205
It is relatively simple, process costs can be effectively saved, and the dielectric layer structure can be caused to reach certain dielectric constant and compared with one
Fixed electric leakage performance, successively occurs chemisorbed with hydroxyl (OH keys) using two kinds of precursors afterwards and reacts, reactional equation is：
O3+ Zr+Al → ZrAlOx (ZAO), since aluminium (Al) atom is before deposition process, hydroxyl (OH keys) (example on most of basal plane
Hydroxyl (OH keys) such as 90% or 80%) suction-operated has been produced with zirconium (Zr) atom and has been reacted, when aluminium (Al) atom starts
It is completely anti-therewith without enough hydroxyls (OH keys) (such as only remaining 10% or 20% hydroxyl (OH keys)) during deposition growing
Should, therefore, the AlOx thickness that the deposition reaction of the utility model institute goes out can be also thinner than general deposit thickness, i.e. the utility model
The thickness of the lamination of the thickness of the ZrAlOx ZrOx identical compared to general dielectric properties and AlOx is thin.The utility model
ZrAlOx dielectric films 203 can slow down capacitance reduction phenomenon, the characteristic of Low dark curient can also be substantially improved, so as to optimize
Dielectric layer capacitance characteristic.
As shown in Figure 10, the present embodiment also provides a kind of dielectric layer structure, including：Substrate 201, titanium oxide (TiOx) film
206th, several are by luring lamination that electric base dielectric layer is formed with tracking-resistant stream base dielectric layer, luring electric dielectric layer, binary or polynary
Dielectric film and tracking-resistant stream dielectric layer.
Titanium oxide (TiOx) film 206 is formed by titanium (Ti) particle and hydroxyl (OH keys) chemisorbed and reacting, shape
Described in Cheng Yu on base 201；
It is described several by the lamination for luring electric base dielectric layer and tracking-resistant stream base dielectric layer to be formed, be formed at the oxidation
Titanium (TiOx) film 206；In the present embodiment, it is described to lure electric base dielectric layer to include zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti)
And lanthanum (La) forms oxide more than one or both of group, it is ZrOx basic units 204 to select in the present embodiment, institute
State tracking-resistant stream base dielectric layer and include aluminium (Al) and silicon (Si) and form oxide in one or both of group, in this reality
It is AlOx basic units 205 to apply selection in example.
It is described to lure electric dielectric layer by the first source of the gas and hydroxyl (OH keys) chemisorbed on the lamination and react raw
Into；First source of the gas forms one kind or two in group including zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
Kind of combination of the above, in the present embodiment, described to lure electric dielectric layer to select be ZrOx dielectric layers 207.
The binary or polynary dielectric film, are formed in an ALD layer, including by the first presoma with being located at
The Part I chemisorbed of the hydroxyl (OH keys) lured on electric dielectric layer and that reacts formation lure electric dielectric material, Yi Jiyou
Second presoma described in luring the Part II chemisorbed of the hydroxyl (OH keys) on electric dielectric layer and reacting the anti-of formation
Leakage current dielectric material；As an example, first presoma includes zirconium (Zr), niobium (Nb), hafnium (Hf), titanium (Ti) and lanthanum (La)
One or both of formed group combination of the above, second presoma includes aluminium (Al) and silicon (Si) is formed in group
One or two；In the present embodiment, the binary or polynary dielectric film include aluminium-zirconium oxide (ZrAlOx) dielectric film
203, zirconium (Zr) particle and aluminium (Al) particle are arranged in the ALD layer with layer, and aluminium (Al) particle is dispersedly filled up
Gap on one basal plane between zirconium (Zr) particle.Further, aluminium (Al) particle occupies the face of the ALD layer
Product occupies both the area of ALD layer ratios relative to the zirconium (Zr) particle between 5.3%~67%.
The tracking-resistant stream dielectric layer, by the second source of the gas and the hydroxyl (OH in the binary or polynary dielectric film
Key) chemisorbed and react generation.Second source of the gas includes aluminium (Al) and silicon (Si) forms one or both of group,
In the present embodiment, it is AlOx dielectric layers 208 that the tracking-resistant stream dielectric layer, which is selected,.
As described above, the dielectric film of the utility model, dielectric layer structure and production method, have the advantages that：
Chemisorbed is successively occurred using the hydroxyl (OH keys) of two kinds of precursors and substrate surface and is reacted for the utility model,
Since tracking-resistant stream presoma is before deposition process ,-the OH on most of substrate produces absorption with high-k presoma and makees
With and react, until tracking-resistant stream presoma starts deposition growing, reacted without enough-OH, therefore institute's deposition reaction
The thickness of the dielectric material of the tracking-resistant stream gone out can be also thinner than general deposit thickness, you can to obtain the Low dark curient of thinner thickness
Lure dielectric substance.The flow model of the utility model can slow down the phenomenon of capacitance reduction, and low drain can also be substantially improved
The characteristic of electricity, so as to optimize the capacitance characteristic of dielectric layer structure.
So the utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by the claim of the utility model.
Claims (13)
- A kind of 1. dielectric film, it is characterised in that including：Basal plane, it is formed with some hydroxyls (OH keys)；AndBinary or polynary dielectric film are in an ALD layer, including by the hydroxyl on the first presoma and the basal plane The Part I chemisorbed of (OH keys) and the electric dielectric material that lures for reacting formation, and by the second presoma and the basal plane The Part II chemisorbed of the hydroxyl (OH keys) simultaneously reacts the tracking-resistant stream dielectric material of formation.
- 2. dielectric film according to claim 1, it is characterised in that：The Part II of the hydroxyl (OH keys) accounts for institute The ratio for stating the summation of the Part I of hydroxyl (OH keys) and the hydroxyl (OH keys) of the Part II is 5%~40%, To reduce the binary or polynary dielectric film leakage current and ensure it with high-k at the same time.
- 3. dielectric film according to claim 1, it is characterised in that：First presoma include zirconium (Zr), niobium (Nb), Hafnium (Hf), titanium (Ti) and lanthanum (La) form one or both of group combination of the above, and second presoma includes aluminium (Al) and silicon (Si) forms one or both of group.
- 4. dielectric film according to claim 3, it is characterised in that：The binary or polynary dielectric film include aluminium oxide Zirconium (ZrAlOx) dielectric film, it is zirconium (Zr) particle that first presoma, which is selected, and it is aluminium (Al) that second presoma, which is selected, Particle, aluminium (Al) particle is between the interrupted zirconium (Zr) particle being dispersed in the ALD layer.
- 5. dielectric film according to any one of claim 1 to 4, it is characterised in that：The binary or polynary dielectric are thin The thickness range of film is 4~10nm.
- A kind of 6. dielectric film, it is characterised in that including binary or polynary dielectric film, it is formed in an ALD layer, The dielectric film includes aluminium-zirconium oxide (ZrAlOx) dielectric film, and zirconium (Zr) particle and aluminium (Al) particle are arranged in institute with layer ALD layer is stated, aluminium (Al) particle dispersedly fills up the gap between zirconium (Zr) particle on a basal plane.
- 7. dielectric film according to claim 6, it is characterised in that：Aluminium (Al) particle occupies the atomic layer deposition The area of layer occupied relative to the zirconium (Zr) particle both the area of ALD layer ratios between 5.3%~ 67%.
- A kind of 8. dielectric layer structure, it is characterised in that including：Electric dielectric layer is lured, the first hydroxyl (OH keys) chemisorbed by the first source of the gas and on a substrate simultaneously reacts generation；Binary or polynary dielectric film, are formed in an ALD layer, including by the first presoma with luring electricity positioned at described The Part I chemisorbed of the second hydroxyl (OH keys) on dielectric layer and that reacts formation lure electric dielectric material, and by second Presoma described in luring the Part II chemisorbed of the second hydroxyl (OH keys) on electric dielectric layer and reacting the anti-of formation Leakage current dielectric material；AndTracking-resistant stream dielectric layer, is changed by the second source of the gas and the trihydroxy (OH keys) in the binary or polynary dielectric film Learn and adsorb and react generation.
- 9. dielectric layer structure according to claim 8, it is characterised in that：First source of the gas include zirconium (Zr), niobium (Nb), Hafnium (Hf), titanium (Ti) and lanthanum (La) form one or both of group combination of the above, and second source of the gas includes aluminium (Al) And silicon (Si) forms one or both of group.
- 10. dielectric layer structure according to claim 8, it is characterised in that：The binary or polynary dielectric film include oxygen Change aluminium zirconium (ZrAlOx) dielectric film, zirconium (Zr) particle and aluminium (Al) particle are arranged in the ALD layer, aluminium with layer (Al) particle dispersedly fills up the gap between zirconium (Zr) particle on a basal plane.
- 11. dielectric layer structure according to claim 10, it is characterised in that：Aluminium (Al) particle occupies the atomic layer The area of sedimentary occupied relative to the zirconium (Zr) particle both the area of ALD layer ratios between 5.3%~ 67%.
- 12. dielectric layer structure according to claim 8, it is characterised in that：It is described to lure between electric dielectric layer and the substrate It is also formed with by titanium (Ti) particle and tetrahydroxy (OH keys) chemisorbed and reacts the titanium oxide formed (TiOx) film, carries The adhesion property of electric dielectric layer and the substrate is lured described in height.
- 13. dielectric layer structure according to claim 12, it is characterised in that：Titanium oxide (TiOx) film is lured with described Several are also formed between electric dielectric layer by luring the lamination that electric base dielectric layer and tracking-resistant stream base dielectric layer are formed.
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