CN206256165U - Chemical vapor depsotition equipment - Google Patents
Chemical vapor depsotition equipment Download PDFInfo
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- CN206256165U CN206256165U CN201621405530.5U CN201621405530U CN206256165U CN 206256165 U CN206256165 U CN 206256165U CN 201621405530 U CN201621405530 U CN 201621405530U CN 206256165 U CN206256165 U CN 206256165U
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Abstract
Chemical vapor depsotition equipment disclosed in the utility model includes inlet duct, and the inlet duct includes：First reacting gas gas outlet, it is used to convey the first reacting gas to the pending substrate, and the second reacting gas gas outlet is used to convey the second reacting gas to the pending substrate；Isolating device is distributed in around the first reacting gas gas outlet, and isolating device causes that the first reacting gas and the hybrid reaction of the second reacting gas spatially realize localization；Two kinds of gas outlets constitute minimum period construction unit together with the isolating device being distributed in around the first reacting gas gas outlet, and this equipment includes a cycle construction unit or more than one periodic structure unit；Drive device, it is used to drive the pending substrate or drives inlet duct.The utility model is designed by isolating device and for the hybrid reaction of two kinds of reacting gas spatially to realize localization, by the relative motion between inlet duct and substrate carrier, deposition processes is carried out to substrate.
Description
Technical field
The utility model is related to a kind of chemical vapor depsotition equipment, particularly a kind of with spatial localization reactive deposition
Chemical vapor depsotition equipment.
Background technology
How film growth apparatus, be accurate to monoatomic layer film thickness monitoring, and realizes the uniform fast-growth of large area,
Low cost is adapted to large-scale application, i.e. the equipment of yield production type precise control thickness is the focus of current industry research.
At present, common chemical vapor deposition (CVD) equipment such as aumospheric pressure cvd (APCVD), low pressure
The film deposition rate for learning the equipment such as vapour deposition (LPCVD), plasma reinforced chemical vapour deposition (PECVD) is very fast, accurately
Control thickness is relatively difficult, it is also difficult to ensures the uniformity of large area, and is capable of the molecular beam epitaxy (MBE) of precise control thickness
Then cost is high with metal-organic chemical vapor deposition equipment (MOCVD) equipment.
Ald (ALD) equipment is relatively low as cost, and can precise control thickness representative, when being roughly divided into tradition
Between type and space response type.Conventional temporal type is back and forth passed through two kinds of reacting gas with time pulse formula, realizes monoatomic layer growth,
This mode growth rate is extremely low, is mainly used in research and development field, it is more difficult to accomplish industrial production.The growth rate of space response type with
Substrate is related with respect to the movement velocity of puff prot, can make the board-like forms of In-Line and realize industrial production.But in air inlet
Slightly show complexity in mode, two kinds of reacting gas need to be spatially segregated from, and need the third nonreactive gas as isolation
Gas is further isolated.Such as Patent No. CN201510101018.5, entitled semiconductor processing equipment；Patent No.
CN20151013771.7, entitled semiconductor processing equipment；Patent No. 20151013771.9, entitled semiconductor processes set
Response type semiconductor processing equipment in space disclosed in three standby art solutions goes out comprising first gas outlet, second gas
Mouthful, the first gas outlet exports the first reacting gas, and the second gas outlet exports second reacting gas, and equipment is also included not with the
The third gas outlet of the gas reaction of one gas vent and second gas outlet, the 3rd gas outlet is in the first gas outlet and second
Gas wall or gas curtain (equivalent to the isolating device in book of telling somebody what one's real intentions are) are formed between gas outlet, two kinds of reacting gas crosstalks are prevented.On
State in technical scheme, three kinds of gases need to realize uniform jet in larger area the design, it is necessary to more complicated.
Therefore, in order to overcome above mentioned problem, different from space response type atomic layer deposition apparatus, the utility model patent is only
Space isolation design is carried out to a kind of reacting gas, second reacting gas is without isolation, and can leave its diffusion, anti-at the first
Answer in gas barrier space and the first reacting gas hybrid reaction, and simultaneously need not be used as the third non-reaction of separation gas
Gas, realizes the chemical vapor depsotition equipment with spatial localization reactive deposition.
The content of the invention
The purpose of this utility model be provide one kind can precise control thickness, with spatial localization reactive deposition
Chemical vapor depsotition equipment.
The principle that the utility model is based on：
It is main that using differential responses gas, reactivity is set with the difference of diffusion coefficient under uniform temperature with pressure
Standby design, isolating device is being spread around the first slower reacting gas, spreads the second very fast and excessive reacting gas part
By after isolating device, in the insulating space of the first reacting gas, with the first reacting gas hybrid reaction, product is deposited to
On pending substrate；Outside the insulating space of the first reacting gas, second amount of reacting gas is far more than the first reaction gas
Body, can be only generated gaseous state intermediate product, not deposit on pending substrate, and then realize space around the first reacting gas
Localization reactive deposition.
Chemical vapor depsotition equipment of the present utility model includes：
Inlet duct, containing the first reacting gas gas outlet and the second reacting gas gas outlet, the first reacting gas gas outlet
For conveying the first reacting gas to pending substrate；Second reacting gas gas outlet, for conveying second to pending substrate
Reacting gas；First reacting gas, the second reacting gas select suitable gas source according to film to be deposited, in selection, lead to
Normal diffusion velocity is fast, low cost reacts and sink as the second reacting gas, the first reacting gas and the second reacting gas
Product forms required film on pending substrate.
Isolating device, is distributed in around the first reacting gas gas outlet, and isolating device causes the first reacting gas and second
The hybrid reaction of reacting gas spatially realizes localization；
Reactive deposition localization refers to the deposition reaction of the first reacting gas and the second reacting gas by limitation isolating device
The particular space for being isolated, in this particular space, the first reacting gas mixes participation with the second reacting gas to be treated
Deposition reaction on treatment substrate, outside the particular space, the first reacting gas is not involved in the reaction on pending substrate.
First reacting gas gas outlet and the second reacting gas gas outlet be distributed in around the first reacting gas gas outlet
Isolating device constitute together minimum periodic structure unit, the chemical vapor depsotition equipment include a cycle construction unit
Or more than one periodic structure unit；Pending substrate carrier, for loading pending substrate.
Drive device, for driving the inlet duct air inlet and pending substrate to realize relative motion, and then realizes
Uniform deposition of the spatial localization reactive deposition on direction of relative movement.Cycle for driving chemical vapor depsotition equipment ties
Structure unit (i.e. inlet duct and the isolating device being distributed in around the first reacting gas gas outlet) and pending substrate carrier；Drive
The effect of dynamic device is to make to form relative motion between inlet duct and substrate, wherein comprising three kinds of forms of relative motion, i.e.,
First, drive device drives pending substrate carrier, the periodic structure unit remains stationary of chemical vapor depsotition equipment；2nd, drive
Device drives the periodic structure unit of chemical vapor depsotition equipment, pending substrate carrier remains stationary；3rd, drive device drives
The periodic structure unit and pending substrate carrier of chemical vapor depsotition equipment, the periodic structure unit of chemical vapor depsotition equipment
Moved with pending substrate carrier.Isolating device includes but is not limited to the pumping being distributed in around a kind of reacting gas gas outlet
Groove, pumping groove is communicated with pump-line, and pumping groove includes but is not limited to one group, two groups or the combination of multigroup pumping groove, is evacuated groove
The first reacting gas and the second reacting gas are extracted, pumping groove forms the particular space of reaction by extracting above-mentioned reacting gas,
The reacting gas of extraction discharges chemical vapor depsotition equipment along exhaust tube.Pumping groove enters along pending substrate carrier and inlet duct
The direction of relative movement A/F of gas port is 1 × 10-3M to 1 × 10-1M, pumping channel opening center and the first reacting gas
The spacing of gas outlet is 2 × 10-3M to 2 × 10-1M, control pumping speed is anti-with the mixing of the second reacting gas by the first reacting gas
In local space where pumping groove should be limited in.
In implementation method of the present utility model, the corresponding carrier gas of reacting gas includes but is not limited to H2、N2, the gas such as Ar
Or the gaseous mixture of above-mentioned gas.
In implementation method of the present utility model, the spacing between reacting gas gas outlet and pending substrate is 1 × 10- 4M to 2 × 10-1M, appropriate preferably spacing is needed according to reaction.
In implementation method of the present utility model, the spacing between two kinds of reacting gas gas outlets is 1 × 10-3M to 1m, root
Appropriate preferably spacing is needed according to reaction.
In implementation method of the present utility model, inlet duct air inlet and pending substrate relative motion speed is 1 ×
10-3M/s to 10m/s, appropriate preferably relative motion speed is needed according to reaction.
In implementation method of the present utility model, reactive deposition temperature is 0 DEG C to 2000 DEG C, is needed according to reaction appropriate excellent
Select temperature.
In implementation method of the present utility model, reaction treatment pressure is 1 × 10-8Pa to 1 × 106Pa, according to reaction need
Will suitably preferred pressure.
In implementation method of the present utility model, reactive deposition speed is 1 × 10-11M/s to 5 × 10-8M/s, according to reaction
Need appropriate preferred deposition speed.
The beneficial effects of the utility model：
The utility model only needs to, by a kind of design of reacting gas isolating device, realize the local of space reactive deposition
Change, by relative motion between inlet duct air inlet and pending substrate, and then realize spatial localization reactive deposition in phase
To the uniform deposition in the direction of motion, so as to obtained being capable of precise control thickness, the change with spatial localization reactive deposition
Learn vapor deposition apparatus.
It is have reactive deposition " print head " in the insulating space of the first reacting gas and the second reacting gas hybrid reaction,
Relative motion is realized with pending substrate by inlet duct air inlet, realizes localization reactive deposition on direction of relative movement
" printing-type " uniform deposition.The utility model can be referred to as printing-type chemical vapor deposition (Printing CVD) equipment,
With splendid large-area uniformity, precise control growth rate (backward compatible spatial ald), high/low temperature deposition is equal
Be adapted to, cost is relatively low, be adapted to industrial production the features such as, can be used for solar cell, large area with portable FPD, flexibility
The fields such as display, semiconductor, gas sensor.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model chemical vapor depsotition equipment.
The explanation of reference numeral：
10 inlet ducts
101 total sources of the gas
102 first reacting gas gas outlets
103 second reacting gas gas outlets
11 isolating devices
12 pending substrate carriers
13 drive devices
Specific embodiment
Specific embodiment example 1
Below in conjunction with the accompanying drawings and embodiment is described in detail to the utility model, but the utility model is not limited to
This.
Fig. 1 be according to of the present utility model with spatial localization reactive deposition, being capable of precise control thickness chemical gaseous phase
The schematic diagram of the embodiment 1 of depositing device.As shown in figure 1, inlet duct 10 in the embodiment, including total source of the gas 101, first is anti-
Answer gas outlet 102, the second reacting gas gas outlet 103.
102 is the first reacting gas gas outlet, and the reacting gas includes but is not limited to individually be passed through metallic compound, alkyl
Such as trimethyl aluminium, trimethyl gallium, triethyl-gallium, diethyl zinc, trimethyl indium, levulinic ketone group such as acetylacetone copper, levulinic
Ketone magnesium, nickel acetylacetonate, acetylacetone,2,4-pentanedione cadmium, vanadium acetylacetonate, tert-butyl alcohol base such as tert-butyl alcohol aluminium, tert-butyl alcohol titanium, tert-butyl alcohol magnesium, uncle
Butanol hafnium, zirconium tert-butoxide, halogen family such as gallium chloride, zinc chloride, Boron tribromide, ruthenium trichloride, titanium tetrachloride, zirconium chloride, tetrachloro
Change hafnium, tantalic chloride, tin tetraiodide, tungsten hexafluoride, other are such as four (ethyl-methyl amido) hafniums, dibutyltin diacetate, four different
Titanium propanolate etc., or the gaseous mixture of above two or two or more gases is passed through, for adulterating or generating multi-element compounds.
103 is the second reacting gas gas outlet, the reacting gas include but is not limited to individually to be passed through methane, silane, aqueous vapor,
Nitrous oxide, oxygen, ozone, hydrogen sulfide, hydrogen selenide, ammonia, hydrogen phosphide, arsenic hydride etc., or be passed through above two or
The gaseous mixture of two or more gases, for adulterating or generating multi-element compounds.Two kinds of corresponding carrier gas of reacting gas include but
It is not limited to H2、N2, the gas such as Ar or above-mentioned gas gaseous mixture.Spacing between two reacting gas gas outlets is 1 × 10-3m
To 1m, preferably spacing is 1 × 10-2M to 5 × 10-1m。
Around a kind of reacting gas gas outlet 102, isolating device 11 realizes space reactive deposition local to isolating device 11
Change, reactive deposition localization refers to that the deposition reaction of the first reacting gas and the second reacting gas is limited in this space.Every
From the pumping groove that device includes but is not limited to be distributed in around a kind of reacting gas gas outlet 102, pumping groove is included but is not limited to
One group, two groups or the combination of multigroup pumping groove, are preferably evacuated groove relative with inlet duct air inlet along pending substrate carrier
Direction of motion A/F is 1 × 10-3M to 2 × 10-2M, is preferably evacuated channel opening center and the first reacting gas trimethyl aluminium
Gas outlet spacing be 2 × 10-3M to 1 × 10-1M, controls pumping speed by the mixing of the first reacting gas and the second reacting gas
Reaction is limited in the local space where being evacuated groove.
First reacting gas gas outlet 102 and the second reacting gas gas outlet 103 be distributed in the first reacting gas outlet
Isolating device 11 around mouth 102 constitutes the periodic structure unit of minimum together, and the chemical vapor depsotition equipment includes one
Periodic structure unit or more than one periodic structure unit；Have on direction of relative movement a cycle construction unit or one with
The upper periodic structure unit.
Pending substrate carrier 12, for loading pending substrate, the carrier material include but is not limited to quartz, graphite,
Metallic aluminium, stainless steel etc..Spacing 1 × 10 between pending substrate carrier 12 and gas outlet 102 and 103-4M to 2 × 10- 1M, preferably spacing 2 × 10-4M to 5 × 10-2m。
Drive device 13, in this example for driving the pending substrate carrier 12, realizes and inlet duct air inlet
The relative motion of mouth, and then realize uniform deposition of the spatial localization reactive deposition on direction of relative movement.Drive device makes
The movement rate of pending substrate carrier 12 is 1 × 10-3M/s to 10m/s, preferred movement speed is 1 × 10-3M/s to 10m/s.
In the utility model embodiment 1, chemical vapor depsotition equipment at a temperature of certain growth, including 0 DEG C to 2000
DEG C, according to deposition film requirements preferable temperature, under certain reaction treatment pressure, including 1 × 10-8Pa to 1 × 106Pa, according to heavy
The product preferred reaction treatment pressure of film requirements.In above parameter after preferably, further preferably reacting gas air inflow, just obtains institute
It is 1 × 10 to need film reactive deposition speed-11M/s to 5 × 10-8M/s, preferably reactive deposition speed are 1 × 10-10M/s to 1 ×
10-8m/s。
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Specific embodiment example 2
For silica-based solar cell back of the body passivation field application, the utility model is used in monocrystalline silicon or multicrystalline silicon substrate
Surface depositing Al2O3Passivation film.Now the 102 of Fig. 1 are the first reacting gas gas outlets, and the reacting gas is included but is not limited to
Trimethyl aluminium, triethyl aluminum, tert-butyl alcohol aluminium etc., the present embodiment is by taking trimethyl aluminium as an example.103 is the second reacting gas outlet
Mouthful, the reacting gas includes but is not limited to aqueous vapor, nitrous oxide, oxygen, ozone etc., and the present embodiment is by taking aqueous vapor as an example.It is excellent
It is 1 × 10 to select the spacing between two reacting gas gas outlets-2M to 5 × 10-1m。
In the present embodiment, trimethyl aluminium can just react with aqueous vapor in room temperature (25 DEG C) and temperatures above, it is contemplated that
Silica-based solar cell Al2O3The back of the body passivation effect of film, preferred film depositing temperature is 100 DEG C to 300 DEG C.It is preferred that at reaction
Reason pressure is 1Pa to 2 × 104Pa。
Under above-mentioned preferred temperature and reaction treatment pressure, two kinds of reacting gas from gas outlet out after, gas along
Gas outlet injection (gas outlet external and internal pressure difference correlation), and (concentration difference correlation) is spread to other directions, its diffusion is dynamic mistake
Journey, meets Fick laws, with gas flow, gas flow rate, pipeline gas concentration, gas outlet pipeline pressure, reaction treatment pressure
There is relation etc. factor.From qualitative, gas concentration difference is bigger, and gas molecule is smaller, spreads faster.From cost-effective angle
Set out, the first reacting gas metallic compound is generally more expensive, thus the second reacting gas is generally excessively used, its concentration is higher.
The molecular weight considered further that to the first reacting gas metallic compound is generally several times as much as the second reacting gas.Thus in other condition bases
In the case of this is consistent, the diffusion of the second reacting gas is faster than the first reacting gas.Specific to the utility model embodiment 2, aqueous vapor
Diffusion be significantly faster than trimethyl aluminium, the two diffusion coefficient has several times or even has difference in magnitude.Therefore, in two kinds of reaction gases
Body from gas outlet out after, diffusion of moisture is fast, and trimethyl aluminium diffusion is slow, and aqueous vapor mainly collects with the hybrid reaction of trimethyl aluminium
In trimethyl aluminium gas outlet periphery.
Designed by the isolating device plus pumping groove around the gas outlet of the first reacting gas trimethyl aluminium, optimization is taken out
Air drain is 1 × 10 along the direction of relative movement A/F of pending substrate and inlet duct air inlet-3M to 2 × 10-2M, it is excellent
Choosing pumping channel opening center is 2 × 10 with the spacing of the gas outlet of the first reacting gas-3M to 1 × 10-1M, and then optimum suction
Groove pumping speed.Excessive diffusion of moisture is partly taken away discharge after coming, preferably pending substrate carrier 12 and gas outlet 102 and
Spacing 1 × 10 between 103-3M to 2 × 10-2M so that pumping groove cloth into insulating space in, in pending substrate surface
Upper trimethyl aluminium meets chemical reaction mol ratio with the molar concentration rate of aqueous vapor, realizes trimethyl aluminium on pending substrate surface
React completely.A small amount of complete trimethyl aluminium of unreacted reacts along pumping groove pumping direction and aqueous vapor, and product is pumped row
Go out.Minimal amount of trimethyl aluminium through pumping groove cloth into insulating space, with the excessive aqueous vapor generation same quilt of gaseous state intermediate product
Take discharge away.So on pending substrate surface, only be evacuated groove cloth into insulating space treatment substrate surface on throwing
The face of penetrating has reactive deposition to generate, and uniform deposition is realized by the relative motion of pending substrate and inlet duct air inlet.
Drive device 13, optional step-by-step movement roller is used to drive the pending substrate carrier 12, the optional graphite of carrier to carry
Plate.Drive device makes the preferred movement speed of pending substrate carrier 12 be 1 × 10-2M/s to 1m/s.
According to actual Al2O3Thin film passivation effect demand, preferred Al2O3Film thickness is 2 × 10-9M to 3 × 10-8m。
After above parameter is preferred, the design flow production capacity power according to equipment, preferably Al2O3The sedimentation rate of film be 1 ×
10-10M/s to 1 × 10-9M/s, and then the preferably source consumption of aqueous vapor and trimethyl aluminium.
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Specific embodiment example 3
For display field and the transparent conductive oxide film (transparent in thin film solar field
Conductive oxide abbreviation TCO) application, it is thin that the utility model is used for low temperature (not higher than 250 DEG C) deposition transparency conducting layer
Film, transparent conductive film material includes but is not limited to binary oxide such as ZnO, In2O3、SnO2, doping ternary oxide is as aoxidized
Aluminium zinc (AZO), indium zinc oxide (IZO), tin indium oxide (ITO), aluminum oxide tin (ATO) etc..
By taking ZnO as an example, now the 102 of Fig. 1 are the first reacting gas gas outlets to the present embodiment, and the reacting gas is included but not
It is limited to diethyl zinc and zinc chloride, the present embodiment is by taking diethyl zinc as an example.103 is the second reacting gas gas outlet, the reaction gas
Body includes but is not limited to aqueous vapor, nitrous oxide, oxygen, ozone etc., and the present embodiment is by taking aqueous vapor as an example.It is preferred that two reaction gases
Spacing between body gas outlet is 1 × 10-2M to 5 × 10-1m。
In the present embodiment, diethyl zinc can just react with aqueous vapor in room temperature (25 DEG C) and temperatures above, it is contemplated that
The conductive characteristic of ZnO film, preferred film depositing temperature be 50 DEG C to 250 DEG C, preferably reaction treatment pressure be 1Pa to 5 ×
104Pa。
At above-mentioned preferred temperature with preferred reaction treatment pressure, the diffusion of aqueous vapor is significantly faster than diethyl zinc, the two
Diffusion coefficient has several times or even has difference in magnitude.Therefore, two kinds of reacting gas from gas outlet out after, diffusion of moisture
Hurry up, and diethyl zinc diffusion is slow, aqueous vapor is concentrated mainly on the periphery of diethyl zinc gas outlet with the hybrid reaction of diethyl zinc.
Designed by the isolating device plus pumping groove around the gas outlet of the first reacting gas diethyl zinc, optimization is taken out
Air drain is 1 × 10 along the direction of relative movement A/F of pending substrate and inlet duct air inlet-3M to 2 × 10-2M, it is excellent
Choosing pumping channel opening center is 2 × 10 with the spacing of the gas outlet of the first reacting gas diethyl zinc-3M to 1 × 10-1M, and then
Optimum suction groove pumping speed.Excessive diffusion of moisture is partly taken away discharge after coming, preferably pending substrate carrier 12 and outlet
Spacing 1 × 10 between mouth 102 and 103-3M to 2 × 10-2M so that pumping groove cloth into insulating space in, in pending lining
Diethyl zinc meets chemical reaction mol ratio with the molar concentration rate of aqueous vapor on basal surface, realizes diethyl on pending substrate surface
The reaction completely of base zinc.
Drive device 13, optional step-by-step movement roller is used to drive the pending substrate carrier 12, the optional graphite of carrier to carry
Plate.Drive device makes the preferred movement speed of pending substrate carrier 12 be 5 × 10-2M/s to 1m/s.
According to actual ZnO film conductive effect demand, preferred ZnO film thickness is 1 × 10-8M to 1 × 10-6m.With
After upper parameter is preferred, the design flow production capacity power according to equipment, the preferably sedimentation rate of ZnO film are 2 × 10-9M/s to 1 × 10- 8M/s, and then the preferably source consumption of aqueous vapor and diethyl zinc.
To reduce resistivity, can be from doping multivariant oxide conductive film.By taking AZO as an example, it is only necessary to by the first reaction
Gas is changed to the gaseous mixture of diethyl zinc and trimethyl aluminium, by controlling the source amount ratio of diethyl zinc and trimethyl aluminium, adjustment
The doping molar percentage of the doping of aluminium in AZO films, preferably aluminium is 1% to 10%.
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Specific embodiment example 4
For the thin film transistor (TFT) (Thin-film of field of flexible display or large area and portable flat display field
Transistor, abbreviation TFT) to apply, the utility model is used for deposition film insulation gate dielectric layer, and gate dielectric membrane material includes
But it is not limited to Al2O3、HfO2、ZrO2、Ta2O5Etc..
The present embodiment is with Al2O3As a example by, now the 102 of Fig. 1 are the first reacting gas gas outlets, the reacting gas include but
Trimethyl aluminium, triethyl aluminum, tert-butyl alcohol aluminium etc. are not limited to, the present embodiment is by taking trimethyl aluminium as an example.103 is the second reacting gas
Gas outlet, the reacting gas includes but is not limited to aqueous vapor, nitrous oxide, oxygen, ozone etc., and the present embodiment is with aqueous vapor
Example.It is preferred that the spacing between two reacting gas gas outlets is 1 × 10-2M to 5 × 10-1m。
The present embodiment Al2O3As TFT insulated gates thickness of dielectric layers preferably 1 × 10-8M to 5 × 10-7M, and as passivation
The embodiment 2 of layer increases compared to thickness.From industrial production angle, unit interval output higher is needed in equipment design
Amount, for this purpose, preferably reactive deposition speed is 2 × 10-9M/s to 1 × 10-8M/s, preferably drive device make pending lining
The movement rate of bottom carrier 12 is 5 × 10-2M/s to 1m/s, and then the preferably source consumption of aqueous vapor and trimethyl aluminium.
Above-described embodiment only illustrates the utility model with body, should not see as to limitation of the present utility model.It is any not take off
The various modifications and changes of tool are carried out at from the utility model objective, all should be in protection domain of the present utility model.
Specific embodiment example 5
Applied with the thin film transistor (TFT) (TFT) of portable flat display field for field of flexible display or large area,
The utility model is used for deposited semiconductor thin film channel layer (channel layer), channel layer thin film material on thin film dielectric layer
Material includes but is not limited to binary compound such as ZnO, In2O3、SnO2, adulterate multi-element compounds such as aluminum zinc oxide (AZO), indium oxide
Zinc (IZO), tin indium oxide (ITO), aluminum oxide tin (ATO), titanium-doped zinc oxide (ZnO:Ti oxynitriding zinc (ZnN), is mixed:O), amorphous
Indium gallium zinc (a-IGZO), amorphous oxide gallium aluminium zinc (a-AGZO), amorphous oxide indium tin zinc (a-ATZO), two layer composite structure
Such as IZO/IGZO, ITO/IGZO, AZO/IGZO, multilayer cycle composite construction such as ZnO/AZO superlattices, ZnO/Al2O3Superlattices etc.
Deng.
By taking ZnO as an example, now the 102 of Fig. 1 are the first reacting gas gas outlets to the present embodiment, and the reacting gas is included but not
It is limited to diethyl zinc and zinc chloride, the present embodiment is illustrated with diethyl zinc.103 is the second reacting gas gas outlet, the reaction gas
Body includes but is not limited to aqueous vapor, nitrous oxide, oxygen, ozone etc., and the present embodiment is by taking aqueous vapor as an example.It is preferred that two reaction gases
Spacing between body gas outlet is 1 × 10-2M to 5 × 10-1m。
The present embodiment ZnO is as TFT channel thickness degree preferably 1 × 10-8M to 1 × 10-7M, with the embodiment as TCO
3 are reduced compared to thickness.Need to match suitable unit interval quantum of output in equipment design, for this purpose, preferably reactive deposition
Speed is 5 × 10-10M/s to 2 × 10-9M/s, preferably drive device make the movement rate of pending substrate carrier 12 be 1 × 10- 2M/s to 1m/s, and then the preferably source consumption of aqueous vapor and diethyl zinc.
Comprehensive the utility model embodiment 3, example 4 and example 5, it is possible to achieve from bottom to top insulate gate dielectric layer, channel layer, thoroughly
The volume production equipment line (bottom to up all in-line) of bright conductive layer whole In-line formulas, this contribute to increase production capacity,
Reduces cost, raising yield etc., it is significant to display industry.
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Specific embodiment example 6
For the high-k insulated gate media applications of semiconductor applications MOSFET, the utility model is thin for depositing high-k
Film medium layer, gate dielectric membrane material includes but is not limited to Al2O3、HfO2、ZrO2、Ta2O5Etc..
The present embodiment is with Al2O3As a example by, now the 102 of Fig. 1 are the first reacting gas gas outlets, the reacting gas include but
Trimethyl aluminium, triethyl aluminum, tert-butyl alcohol aluminium etc. are not limited to, the present embodiment is by taking trimethyl aluminium as an example.103 is the second reacting gas
Gas outlet, the reacting gas includes but is not limited to aqueous vapor, nitrous oxide, ozone etc., and the present embodiment is by taking aqueous vapor as an example.It is preferred that
Spacing between two reacting gas gas outlets is 1 × 10-2M to 5 × 10-1m。
The present embodiment Al2O3Used as high-k insulation gate mediums, preferred thickness is 2 × 10-9M to 3 × 10-8m.With embodiment
2 is close.But unlike, required reactive deposition temperature is higher than embodiment 2, and preferably reactive deposition temperature is 200 DEG C to 400
DEG C, preferably reaction treatment pressure is 1Pa to 2 × 104Pa.Need to match suitable unit interval quantum of output, pin in equipment design
To this purpose, preferably reactive deposition speed is 5 × 10-10M/s to 2 × 10-9M/s, preferably drive device make pending substrate carrier
12 movement rate is 1 × 10-2M/s to 1m/s, and then the preferably source consumption of aqueous vapor and trimethyl aluminium.
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Specific embodiment example 7
For resistive formula random access memory (resistiverandom access in the non-volatile formula memory area of semiconductor
Memory, abbreviation RRAM) to apply, the utility model is used for depositing metal oxide variable resistor film layer, including but not limited to
ZnO, NiO, HfO in the middle of metal/metal oxide/metal (M/MO/M) sandwich2、ZnMgO、ZnO:Cu、ZnO:Ti、
ZTO, composite construction such as ZnMgO/ZnO, ZrO2/ZnO、Al2O3/HfO2、Al2O3/HfO2/Al2O3Etc.；Or by metal electrode
TCO materials are changed to, the TCO thin film and intermediate metal oxide deposited in transparent resistance variable memory TCO/MO/TCO structures are thin
Film, such as ITO/ZnO/ITO, AZO/ZnO/ITO, ITO/HfO2/ ITO, ITO/IGZO/ITO etc..
The present embodiment is with the metal oxide HfO in the middle of sandwich2As a example by, now the 102 of Fig. 1 are the first reacting gas
Gas outlet, the reacting gas includes but is not limited to tert-butyl alcohol hafnium, hafnium tetrachloride, four (ethyl-methyl amido) hafniums etc., this implementation
Example is by taking four (ethyl-methyl amido) hafniums as an example.103 is the second reacting gas gas outlet, and the reacting gas includes but is not limited to water
Gas, nitrous oxide, oxygen, ozone etc., the present embodiment is by taking aqueous vapor as an example.It is preferred that between two reacting gas gas outlets
Away from being 1 × 10-2M to 5 × 10-1m。
The present embodiment HfO2As resistive formula random access memory intermidate oxide thickness of interlayer preferably 1 × 10-9M to 1 ×
10-8M, required very thin thickness.Need to match suitable unit interval quantum of output in equipment design, for this purpose, preferably react
Sedimentation rate is 2 × 10-10M/s to 1 × 10-9M/s, preferably drive device make the movement rate of pending substrate carrier 12 for 1 ×
10-2M/s to 1 × 10-1M/s, and then the preferably source consumption of aqueous vapor and four (ethyl-methyl amido) hafniums.
Accordingly, depositing Al2O3/HfO2、Al2O3/HfO2/Al2O3Deng composite construction oxide layer when, only need to be by preferred thickness
Determine that sedimentation time is successively passed through trimethyl aluminium and four (ethyl-methyl amido) hafniums.
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Specific embodiment example 8
For the application of metal phase conductive electrode field, the utility model is used for thin in substrate deposition metal phase conductive electrode
Film, including but not limited to TiN, TaN, HfN, RuO2Etc..By taking TiAlN thin film electrode as an example, now the 102 of Fig. 1 are the present embodiment
First reacting gas gas outlet, the reacting gas includes but is not limited to titanium tetrachloride, tert-butyl alcohol titanium, titanium tetraisopropylate etc., this
Embodiment is illustrated with titanium tetrachloride.103 is the second reacting gas gas outlet, and the present embodiment is by taking ammonia as an example.It is preferred that two reactions
Spacing between gas outlet is 1 × 10-2M to 5 × 10-1m。
In the present embodiment, titanium tetrachloride and ammonia need the higher temperature just to react, it is considered to electrode resistance rate, excellent
Film deposition temperature is selected for 300 DEG C to 600 DEG C, preferably reaction treatment pressure is 1Pa to 2 × 104Pa。
The present embodiment TiN is as conductive electrode thickness preferably 1 × 10-9M to 5 × 10-8M, matching is needed in equipment design
Suitable unit interval quantum of output, for this purpose, preferably reactive deposition speed is 1 × 10-10M/s to 1 × 10-9M/s, preferably
Drive device makes the movement rate of pending substrate carrier 12 be 1 × 10-2M/s to 2 × 10-1M/s, and then preferably ammonia and four
The source consumption of titanium chloride.
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Specific embodiment example 9
For the application of gas sensor field, the utility model is used to deposit air-sensitive film layer, such as ZnO, WO3、SnO2、
TiO2、In2O3、V2O5Etc., for the detection of toxic gas and fuel gas.
The present embodiment SnO2As a example by, now the 102 of Fig. 1 are the first reacting gas gas outlets, and the reacting gas is included but not
It is limited to butter of tin, tin tetraiodide, dibutyltin diacetate etc., the present embodiment is illustrated with tin tetraiodide.103 is the second reaction
Gas outlet, the reacting gas includes but is not limited to aqueous vapor, nitrous oxide, oxygen, ozone etc., and the present embodiment is with oxygen
As a example by.It is preferred that the spacing between two reacting gas gas outlets is 1 × 10-2M to 5 × 10-1m。
In the present embodiment, tin tetraiodide and oxygen need the higher temperature just to react, it is considered to air-sensitive effect, preferably
Film deposition temperature is 300 DEG C to 600 DEG C, and preferably reaction treatment pressure is 1Pa to 2 × 104Pa。
The present embodiment SnO2As gas sensing film thickness preferably 2 × 10-9M to 1 × 10-7M, needs in equipment design
Suitable unit interval quantum of output is matched, for this purpose, preferably reactive deposition speed is 2 × 10-10M/s to 1 × 10-9M/s,
It is preferred that drive device makes the movement rate of pending substrate carrier 12 be 1 × 10-2M/s to 2 × 10-1M/s, and then preferably oxygen
With the source consumption of tin tetraiodide.
Above-described embodiment is only used for illustrating the utility model, should not see as to limitation of the present utility model.It is any
The various modifications and changes that the utility model objective is carried out are not departed from, all should be in protection domain of the present utility model.
Claims (10)
1. a kind of chemical vapor depsotition equipment, it includes：
Inlet duct, containing the first reacting gas gas outlet and the second reacting gas gas outlet, the first reacting gas gas outlet is used for
The first reacting gas is conveyed to pending substrate；Second reacting gas gas outlet is used to convey the second reaction gas to pending substrate
Body；
Isolating device, is distributed in around the first reacting gas gas outlet, and isolating device causes the first reacting gas and second
The hybrid reaction of reacting gas spatially realizes localization；
First reacting gas gas outlet and the second reacting gas gas outlet be distributed in around the first reacting gas gas outlet every
Constitute the periodic structure unit of minimum together from device, the chemical vapor depsotition equipment includes a cycle construction unit or one
Individual above periodic structure unit；
Pending substrate carrier, for loading pending substrate；
Drive device, periodic structure unit or pending substrate carrier for driving chemical vapor depsotition equipment, or drive
The periodic structure unit and pending substrate carrier of dynamic chemical vapor depsotition equipment.
2. chemical vapor depsotition equipment as claimed in claim 1, it is characterised in that the isolating device makes the first reacting gas
Localization is spatially realized with the hybrid reaction of the second reacting gas, isolating device isolates specific space, specific at this
In space, the first reacting gas mixes the deposition reaction participated on pending substrate with the second reacting gas, in the specific sky
Between it is outer, the first reacting gas is not involved in the reaction on pending substrate.
3. chemical vapor depsotition equipment as claimed in claim 1 or 2, it is characterised in that the isolating device is to be distributed in the
A kind of pumping groove around reacting gas gas outlet, the pumping groove is connected with pump-line.
4. chemical vapor depsotition equipment as claimed in claim 3, it is characterised in that the pumping groove is in the first reacting gas
Gas outlet is provided with one group, two groups or multigroup；It is evacuated relative motion of the groove along pending substrate carrier and inlet duct air inlet
Direction A/F is 1 × 10-3M to 1 × 10-1M, the spacing of pumping channel opening center and the first reacting gas gas outlet for 2 ×
10-3M to 2 × 10-1m；The hybrid reaction of the first reacting gas and the second reacting gas is limited in pumping by pumping groove control pumping speed
In local space where groove.
5. chemical vapor depsotition equipment as claimed in claim 1, it is characterised in that the drive device realizes chemical vapor deposition
Relative motion between the periodic structure unit and pending substrate carrier of product equipment；Drive device drives chemical vapor deposition to set
Standby periodic structure unit motion, pending substrate carrier is motionless；Or drive device drives substrate carrier motion, chemical gaseous phase
The periodic structure unit of depositing device is motionless；Or drive device drives the periodic structure unit of chemical vapor depsotition equipment and treats
Treatment substrate carrier, the periodic structure unit motion of chemical vapor depsotition equipment, pending substrate carrier is also moved.
6. the chemical vapor depsotition equipment as described in claim 1,2,4 or 5, it is characterised in that the isolating device is realized anti-
Answering gas localization reaction compartment has three-dimensional character, in the state of inlet duct with pending substrate carrier geo-stationary,
Localization reaction compartment is deposited to includes following shape on pending substrate：Circle, annular, sector, empty quadrilateral or reality
Heart quadrangle.
7. the chemical vapor depsotition equipment as described in claim 1,2,4 or 5, it is characterised in that the first reacting gas gas outlet
Spacing between isolating device is 1 × 10-4M to 1 × 10-1m。
8. the chemical vapor depsotition equipment as described in claim 1,2,4 or 5, it is characterised in that the first reacting gas gas outlet
And the second spacing between reacting gas gas outlet and pending substrate is 1 × 10-4M to 2 × 10-1m。
9. the chemical vapor depsotition equipment as described in claim 1,2,4 or 5, it is characterised in that the first reacting gas gas outlet
And the second spacing between reacting gas gas outlet is 1 × 10-3M to 1m.
10. the chemical vapor depsotition equipment as described in claim 1,2,4 or 5, it is characterised in that the reaction gas of inlet duct first
Body gas outlet and the second reacting gas gas outlet and pending substrate relative motion speed are 1 × 10-3M/s to 10m/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621405530.5U CN206256165U (en) | 2016-12-21 | 2016-12-21 | Chemical vapor depsotition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621405530.5U CN206256165U (en) | 2016-12-21 | 2016-12-21 | Chemical vapor depsotition equipment |
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| Publication Number | Publication Date |
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| CN206256165U true CN206256165U (en) | 2017-06-16 |
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ID=59030346
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|---|---|---|---|
| CN201621405530.5U Withdrawn - After Issue CN206256165U (en) | 2016-12-21 | 2016-12-21 | Chemical vapor depsotition equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435528A (en) * | 2016-12-21 | 2017-02-22 | 江苏微导纳米装备科技有限公司 | Chemical vapor deposition equipment |
| CN108456868A (en) * | 2018-02-06 | 2018-08-28 | 江苏微导纳米装备科技有限公司 | A kind of polylactone method for manufacturing thin film |
| CN108715449A (en) * | 2018-06-29 | 2018-10-30 | 中国建筑材料科学研究总院有限公司 | Chemical vapor deposition prepares the device of carbonization silicon sponge |
-
2016
- 2016-12-21 CN CN201621405530.5U patent/CN206256165U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435528A (en) * | 2016-12-21 | 2017-02-22 | 江苏微导纳米装备科技有限公司 | Chemical vapor deposition equipment |
| CN106435528B (en) * | 2016-12-21 | 2019-02-19 | 江苏微导纳米装备科技有限公司 | Chemical vapor depsotition equipment |
| CN108456868A (en) * | 2018-02-06 | 2018-08-28 | 江苏微导纳米装备科技有限公司 | A kind of polylactone method for manufacturing thin film |
| CN108715449A (en) * | 2018-06-29 | 2018-10-30 | 中国建筑材料科学研究总院有限公司 | Chemical vapor deposition prepares the device of carbonization silicon sponge |
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