CN207251570U - A kind of soft switch circuit - Google Patents

A kind of soft switch circuit Download PDF

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Publication number
CN207251570U
CN207251570U CN201721200116.5U CN201721200116U CN207251570U CN 207251570 U CN207251570 U CN 207251570U CN 201721200116 U CN201721200116 U CN 201721200116U CN 207251570 U CN207251570 U CN 207251570U
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oxide
semiconductor
metal
voltage
capacitance
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陈晓斌
张辉
宋安国
吴壬华
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Shenzhen Shinry Technologies Co Ltd
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Shenzhen Shinry Technologies Co Ltd
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Abstract

The utility model embodiment discloses a kind of soft switch circuit, wherein the soft switch circuit rises suppressor using the first metal-oxide-semiconductor of discrete component, the second metal-oxide-semiconductor, first voltage, second voltage rises suppressor, commutation controller, power slot and power output interface and forms., can be by rising suppressor and second voltage rising suppressor reduction circuit turn-off power loss with the first voltage of paralleled power switches using the utility model.

Description

A kind of soft switch circuit
Technical field
It the utility model is related to electronic technology field, more particularly to a kind of soft switch circuit.
Background technology
The application of on-off circuit is quite varied in electronic technology field, and on-off circuit mainly includes hard switching circuit and soft On-off circuit.Wherein, hard switching circuit due to switching loss it is larger, be gradually switched on and off the less soft switch circuit of loss and substitute. The climbing speed of voltage when in the prior art, in order to suppress soft switch circuit shut-off, is one larger electricity of paralleled power switches Hold, reduce the climbing speed of switch tube voltage, reduce the turn-off power loss of turn off process.However, due to paralleled power switches Capacitance is larger, and exciting current is difficult to meet the voltage upset in dead time, increases exciting current by force and adds primary side peak value It has impact on switching rate.
Utility model content
The utility model embodiment provides a kind of soft switch circuit, rises suppressor by switch tube shunt voltage, can To reduce the turn-off power loss of soft switch circuit.
To solve the above-mentioned problems, the utility model embodiment provides a kind of soft switch circuit, including:First metal-oxide-semiconductor, Two metal-oxide-semiconductors, first voltage rise suppressor, second voltage rises suppressor, commutation controller, power slot and power supply output connect Mouthful;Wherein:
First metal-oxide-semiconductor and the first voltage rise that suppressor is in parallel, the drain electrode of first metal-oxide-semiconductor respectively with institute State first voltage and rise one end of suppressor and be connected with the power slot, the source electrode of first metal-oxide-semiconductor is respectively with described the The draining of two metal-oxide-semiconductors, the first voltage rise the other end of suppressor, the second voltage rises one end and the institute of suppressor The one end for stating commutation controller is connected, and is connected by second metal-oxide-semiconductor with the power output interface;
Second metal-oxide-semiconductor is in parallel with second voltage rising suppressor, while second metal-oxide-semiconductor and the rectification Controller is in parallel, and the source electrode with first metal-oxide-semiconductor, the first voltage rise suppression respectively for the drain electrode of second metal-oxide-semiconductor One end that the other end of device, the second voltage rise suppressor is connected with one end of the commutation controller, and passes through First metal-oxide-semiconductor is connected with the power slot, and the source electrode of second metal-oxide-semiconductor rises with the second voltage respectively to be suppressed The other end of device, the other end of the commutation controller are connected with the power output interface.
Wherein, the first voltage rises suppressor and includes:First capacitance and first switch;
Drain electrode of the one end of first capacitance respectively with power slot and first metal-oxide-semiconductor is connected, first electricity The other end of appearance is connected with one end of the first switch;
One end of the first switch is connected with first capacitance, the other end of the first switch respectively with it is described The source electrode of first metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, the second voltage rise one end of suppressor and the rectification control One end of device processed is connected.
Wherein, the second voltage rises suppressor and includes:Second capacitance and second switch;
The source electrode with first metal-oxide-semiconductor, second metal-oxide-semiconductor drain, described respectively for one end of second capacitance First voltage rise suppressor the other end be connected with one end of the commutation controller, the other end of second capacitance with One end of the second switch is connected;
One end of the second switch is connected with second capacitance, the other end of the second switch respectively with it is described The source electrode of second metal-oxide-semiconductor, the other end of the commutation controller are connected with the power output interface.
Wherein, the first voltage rises suppressor and includes:First resistor, the 3rd capacitance and the 3rd metal-oxide-semiconductor;
The first resistor is in parallel with the 3rd capacitance, one end of the first resistor respectively with first metal-oxide-semiconductor Drain, one end of the 3rd capacitance is connected with the power slot, the other end of the first resistor is respectively with described The drain electrode of the other end of three capacitances and the 3rd metal-oxide-semiconductor is connected;
3rd capacitance is in parallel with the first resistor, one end of the 3rd capacitance respectively with first metal-oxide-semiconductor Drain, one end of the first resistor is connected with the power slot, the other end of the 3rd capacitance is respectively with described The drain electrode of the other end of one resistance and the 3rd metal-oxide-semiconductor is connected;
3rd metal-oxide-semiconductor drain electrode respectively with the other end of the first resistor and the other end phase of the 3rd capacitance Connection, the source electrode of the 3rd metal-oxide-semiconductor source electrode with first metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, described the respectively One end that two voltages rise suppressor is connected with one end of the commutation controller.
Wherein, the second voltage rises suppressor and includes:Second resistance, the 4th capacitance and the 4th metal-oxide-semiconductor;
The second resistance is in parallel with the 4th capacitance, one end of the second resistance respectively with first metal-oxide-semiconductor Source electrode, the draining of second metal-oxide-semiconductor, one end of the 4th capacitance, the first voltage rise the other end of suppressor Be connected with one end of the commutation controller, the other end of the second resistance respectively with the other end of the 4th capacitance and The drain electrode of 4th metal-oxide-semiconductor is connected;
4th capacitance is in parallel with the second resistance, one end of the 4th capacitance respectively with first metal-oxide-semiconductor Source electrode, the draining of second metal-oxide-semiconductor, one end of the second resistance, the first voltage rise the other end of suppressor Be connected with one end of the commutation controller, the other end of the 4th capacitance respectively with the other end of the second resistance and The drain electrode of 4th metal-oxide-semiconductor is connected;
4th metal-oxide-semiconductor drain electrode respectively with the other end of the second resistance and the other end phase of the 4th capacitance Connection, the source electrode of the 4th metal-oxide-semiconductor other end with the commutation controller, the source electrode of second metal-oxide-semiconductor and institute respectively Power output interface is stated to be connected.
Wherein, the first voltage rises suppressor and includes:3rd resistor, the first diode, the first voltage-stabiliser tube and the 5th Capacitance;
The 3rd resistor and first diodes in parallel, one end of the 3rd resistor respectively with the first MOS The draining of pipe, the cathode tube of the one or two pole is connected with the power slot, the other end of the 3rd resistor respectively with institute The anode for stating the first diode is connected with the anode of first voltage-stabiliser tube;
First diode is in parallel with the 3rd resistor, and the anode of first diode is electric with the described 3rd respectively The other end of resistance is connected with the anode of first voltage-stabiliser tube, the cathode of first diode respectively with the first MOS The draining of pipe, one end of the 3rd resistor is connected with the power slot;
The anode of first voltage-stabiliser tube respectively with the other end of the 3rd resistor and the anode of first diode It is connected, the cathode of first voltage-stabiliser tube is connected with one end of the 5th capacitance;
One end of 5th capacitance is connected with the cathode of first voltage-stabiliser tube, the other end point of the 5th capacitance The draining of source electrode, second metal-oxide-semiconductor not with first metal-oxide-semiconductor, the second voltage rise one end and the institute of suppressor The one end for stating commutation controller is connected.
Wherein, the second voltage rises suppressor and includes:4th resistance, the second diode, the second voltage-stabiliser tube and the 6th Capacitance;
4th resistance and second diodes in parallel, one end of the 4th resistance respectively with the first MOS The source electrode of pipe, the draining of second metal-oxide-semiconductor, the cathode of second diode, the first voltage rise the another of suppressor One end is connected with one end of the commutation controller, the other end of the 4th resistance sun with second diode respectively Pole is connected with the anode of second voltage-stabiliser tube;
Second diode and the 4th resistor coupled in parallel, the anode of second diode are electric with the described 4th respectively The other end of resistance is connected with the anode of second voltage-stabiliser tube, the cathode of second diode respectively with the first MOS The source electrode of pipe, the draining of second metal-oxide-semiconductor, one end of the 4th resistance, the first voltage rise the another of suppressor End is connected with one end of the commutation controller;
The anode of second voltage-stabiliser tube respectively with the other end of the 4th resistance and the anode of second diode It is connected, the cathode of second voltage-stabiliser tube is connected with one end of the 6th capacitance;
One end of 6th capacitance is connected with the cathode of second voltage-stabiliser tube, the other end point of the 6th capacitance The source electrode and the power output interface of the other end, second metal-oxide-semiconductor not with the commutation controller are connected.
Wherein, the commutation controller includes:Inductance, transformer, the 3rd diode, the 4th diode, the 7th capacitance and Commutation capacitor;
One end of the inductance L source electrode with first metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, described first respectively The other end and the second voltage that voltage rises suppressor rise one end of suppressor and are connected, the other end of the inductance and One end of the transformer is connected;
One end of the transformer is connected with the other end of the inductance and the anode of the 3rd diode respectively, institute The other end for stating transformer is connected with one end of the 7th capacitance and the anode of the 4th diode respectively, the transformation The sliding end of device is connected with the cathode of the commutation capacitor;
The anode of 3rd diode is connected with one end of the transformer, the cathode difference of the 3rd diode It is connected with the cathode of the 4th diode and the anode of the commutation capacitor;
The anode of 4th diode is connected with the other end of the transformer, the cathode point of the 4th diode It is not connected with the cathode of the 3rd diode and the anode of the commutation capacitor;
The anode of the commutation capacitor respectively with the cathode of the 3rd diode and the cathode phase of the 4th diode Connection, the cathode of the commutation capacitor are connected with the sliding end of the transformer;
One end of 7th capacitance is connected with the other end of the transformer, the other end difference of the 7th capacitance Rise the other end of suppressor with the second voltage, the source electrode of second metal-oxide-semiconductor is connected with the power output interface.
Implement the utility model embodiment, have the advantages that:
The soft switch circuit of the present invention rises suppressor using first voltage and second voltage rises suppressor and reduces metal-oxide-semiconductor Turn-off power loss, suppressor is risen by capacitance and the first voltage that is composed in series of switch and second voltage rises suppressor, is passed through When switch can control capacitance in parallel with metal-oxide-semiconductor, capacitance suppresses metal-oxide-semiconductor voltage increase rate, reduces the turn-off power loss of circuit;By Capacitance, resistance and metal-oxide-semiconductor composition first voltage rise suppressor and second voltage rising suppressor, pass through the switch speed of metal-oxide-semiconductor The cost optimization of soft switch circuit realization is added with the difference of conducting resistance;By resistance, diode, voltage-stabiliser tube and capacitance group Into first voltage rise suppressor and second voltage and rise suppressor, solve soft open by the effect of diode and voltage-stabiliser tube The problem of auxiliary tube is lost in powered-down road.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme in the embodiment of the utility model, will make below to required in embodiment Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the utility model, For those of ordinary skill in the art, without creative efforts, can also be obtained according to these attached drawings Other attached drawings.
Fig. 1 is a kind of circuit diagram of soft switch circuit of the present invention;
Fig. 2 is the circuit diagram of another soft switch circuit of the invention;
Fig. 3 is the circuit diagram of another soft switch circuit of the invention.
Embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out Clearly and completely describe, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole realities Apply example.Based on the embodiment in the utility model, those of ordinary skill in the art institute without making creative work The every other embodiment obtained, shall fall within the protection scope of the present invention.
Fig. 1 is referred to, for an embodiment of the present invention provides a kind of circuit diagram of soft switch circuit.As shown in Figure 1, institute Stating soft switch circuit 10 includes:First metal-oxide-semiconductor 11, the second metal-oxide-semiconductor 12, first voltage rise suppressor 13, second voltage rises Suppressor 14, commutation controller 15, power slot 16 and power output interface 17;
First metal-oxide-semiconductor 11 is in parallel with first voltage rising suppressor 13, the drain electrode point of first metal-oxide-semiconductor 11 Do not rise one end of suppressor 13 with the first voltage and the power slot 16 is connected, the source electrode of first metal-oxide-semiconductor 11 Rise the other end of suppressor 13 with the draining of second metal-oxide-semiconductor 12, the first voltage respectively, the second voltage rises One end of suppressor 14 is connected with one end of the commutation controller 15, and passes through second metal-oxide-semiconductor 12 and the electricity Source output interface phase 17 connects;
Second metal-oxide-semiconductor 12 is in parallel with second voltage rising suppressor 14, while second metal-oxide-semiconductor 12 and institute State the parallel connection of commutation controller 15, the drain source electrode with first metal-oxide-semiconductor 11, described first respectively of second metal-oxide-semiconductor 12 Voltage rises the one of the other end of suppressor 13, one end of second voltage rising suppressor 14 and the commutation controller 15 End is connected, and is connected by first metal-oxide-semiconductor 11 with the power slot 16, the source electrode point of second metal-oxide-semiconductor 12 Do not rise the other end of suppressor 14, the other end of the commutation controller 15 and power supply output with the second voltage to connect Mouth 17 is connected.
In the first embodiment of the embodiment of the present invention, the first voltage, which rises suppressor 13, to be included:First electricity Hold 131 and first switch 132;
Drain electrode of the one end of first capacitance 131 respectively with power slot 16 and first metal-oxide-semiconductor 11 is connected, described The other end of first capacitance 131 is connected with one end of the first switch 132;
One end of the first switch 132 is connected with first capacitance 131, the other end of the first switch 132 The source electrode with first metal-oxide-semiconductor 11, the draining of second metal-oxide-semiconductor 12, the second voltage rise suppressor 14 respectively One end is connected with one end of the commutation controller 15.
Further, in embodiments of the present invention, the second voltage rises suppressor 14 and includes:Second capacitance, 141 He Second switch 142;
The leakage of one end of second capacitance 141 source electrode with first metal-oxide-semiconductor 11, second metal-oxide-semiconductor 12 respectively The other end that pole, the first voltage rise suppressor 13 is connected with one end of the commutation controller 15, second electricity The other end of appearance 141 is connected with one end of the second switch 142;
One end of the second switch 142 is connected with second capacitance 141, the other end of the second switch 142 The source electrode with second metal-oxide-semiconductor 12, the other end of the commutation controller 15 are connected with the power output interface 17 respectively Connect.
In the first embodiment of the embodiment of the present invention, the first voltage rises suppressor 13 and includes the first electricity Hold 131 and first switch 132, wherein, the shut-off of the first metal-oxide-semiconductor 11 is in parallel with first capacitance 131 initial stage, and described first Capacitance 131 can have the voltage increase rate that larger capacitance can suppress first metal-oxide-semiconductor 11, so as to reduce State the turn-off power loss of the first metal-oxide-semiconductor 11;After first metal-oxide-semiconductor 11 complete switches off, the first switch 132 disconnects, at this time First capacitance 131 is in off position.Since the shut-off time at initial stage of first metal-oxide-semiconductor 11 is shorter, described first Capacitance 131 can meet exciting current without increasing primary side peak value in a short time.
In second of embodiment of the embodiment of the present invention, Fig. 2 is referred to, for an embodiment of the present invention provides another kind The circuit diagram of soft switch circuit.
As shown in Fig. 2, in second of embodiment of the embodiment of the present invention, the first voltage rises suppressor 13 and wraps Include:First resistor 133, the 3rd capacitance 134 and the 3rd metal-oxide-semiconductor 135;
The first resistor 133 is in parallel with the 3rd capacitance 134, one end of the first resistor 133 respectively with it is described The draining of first metal-oxide-semiconductor 11, one end of the 3rd capacitance 134 is connected with the power slot 16, the first resistor 133 Drain electrode of the other end respectively with the other end and the 3rd metal-oxide-semiconductor 135 of the 3rd capacitance 134 is connected;
3rd capacitance 134 is in parallel with the first resistor 133, one end of the 3rd capacitance 134 respectively with it is described The draining of first metal-oxide-semiconductor 11, one end of the first resistor 133 is connected with the power slot 16, the 3rd capacitance 134 Drain electrode of the other end respectively with the other end and the 3rd metal-oxide-semiconductor 135 of the first resistor 133 is connected;
The drain other end with the first resistor 133 and the 3rd capacitance 134 respectively of 3rd metal-oxide-semiconductor 135 The other end be connected, the source electrode of the 3rd metal-oxide-semiconductor 135 source electrode with first metal-oxide-semiconductor 11, the 2nd MOS respectively One end that the draining of pipe 12, the second voltage rise suppressor 13 is connected with one end of the commutation controller 15.
Further, in embodiments of the present invention, the second voltage rises suppressor 14 and includes:Second resistance 143, the Four capacitances 144 and the 4th metal-oxide-semiconductor 145;
The second resistance 143 is in parallel with the 4th capacitance 144, one end of the second resistance 143 respectively with it is described The source electrode of first metal-oxide-semiconductor 11, the draining of second metal-oxide-semiconductor 12, one end of the 4th capacitance 144, in the first voltage The other end for rising suppressor 13 is connected with one end of the commutation controller 15, the other end difference of the second resistance 143 Drain electrode with the other end and the 4th metal-oxide-semiconductor 145 of the 4th capacitance 144 is connected;
4th capacitance 144 is in parallel with the second resistance 143, one end of the 4th capacitance 144 respectively with it is described The source electrode of first metal-oxide-semiconductor 11, the draining of second metal-oxide-semiconductor 12, one end of the second resistance 143, in the first voltage The other end for rising suppressor 13 is connected with one end of the commutation controller 15, the other end difference of the 4th capacitance 144 Drain electrode with the other end and the 4th metal-oxide-semiconductor 145 of the second resistance 143 is connected;
The drain other end with the second resistance 143 and the 4th capacitance 144 respectively of 4th metal-oxide-semiconductor 145 The other end be connected, the source electrode of the 4th metal-oxide-semiconductor 145 other end with the commutation controller 15, described second respectively The source electrode of metal-oxide-semiconductor 12 is connected with the power output interface 17.
In second of embodiment of the embodiment of the present invention, first metal-oxide-semiconductor 11 and second metal-oxide-semiconductor 12 are opened It is smaller to close the slower conducting resistance of speed, and the switching speed of the 3rd metal-oxide-semiconductor 135 and the 4th metal-oxide-semiconductor 145 is very fast but leads The resistance that is powered is larger, can increase the cost optimization of the realization of soft switch circuit 10.
In the third embodiment of the embodiment of the present invention, Fig. 3 is referred to, for an embodiment of the present invention provides another kind The circuit diagram of soft switch circuit.
As shown in figure 3, in the third embodiment of the embodiment of the present invention, the first voltage rises suppressor 13 and wraps Include:3rd resistor 136, the first diode 137, the first voltage-stabiliser tube 138 and the 5th capacitance 139;
The 3rd resistor 136 is in parallel with first diode 137, one end of the 3rd resistor 136 respectively with institute State the draining of the first metal-oxide-semiconductor 11, the cathode of first diode 137 is connected with the power slot 16, the 3rd resistor 136 other end is connected with the anode of first diode 137 and the anode of first voltage-stabiliser tube 138 respectively;
First diode 137 is in parallel with the 3rd resistor 136, the anode of first diode 137 respectively with The other end of the 3rd resistor 136 is connected with the anode of first voltage-stabiliser tube 138, the moon of first diode 137 Pole respectively with the draining of first metal-oxide-semiconductor 11, one end of the 3rd resistor 136 and the power slot 16 are connected;
The anode of first voltage-stabiliser tube 138 other end with the 3rd resistor 136 and first diode respectively 137 anode is connected, and the cathode of first voltage-stabiliser tube 138 is connected with one end of the 5th capacitance 139;
One end of 5th capacitance 139 is connected with the cathode of first voltage-stabiliser tube 138, the 5th capacitance 139 The other end source electrode with first metal-oxide-semiconductor 11, the draining of second metal-oxide-semiconductor 12, the second voltage rise suppression respectively One end of device 14 processed is connected with one end of the commutation controller 15.
Further, in embodiments of the present invention, the second voltage rises suppressor 14 and includes:4th resistance 146, Two diodes 147, the second voltage-stabiliser tube 148 and the 6th capacitance 149;
4th resistance 146 is in parallel with second diode 147, one end of the 4th resistance 146 respectively with institute State the source electrode of the first metal-oxide-semiconductor 11, the draining of second metal-oxide-semiconductor 12, the cathode of second diode 147, first electricity The other end that pressure rises suppressor 13 is connected with one end of the commutation controller 15, the other end of the 4th resistance 146 It is connected respectively with the anode of second diode 147 and the anode of second voltage-stabiliser tube 148;
Second diode 147 is in parallel with the 4th resistance 146, the anode of second diode 147 respectively with The other end of 4th resistance 146 is connected with the anode of second voltage-stabiliser tube 148, the moon of second diode 147 The pole source electrode with first metal-oxide-semiconductor 11, the draining of second metal-oxide-semiconductor 12, one end of the 4th resistance 146, institute respectively The other end for stating first voltage rising suppressor 13 is connected with one end of the commutation controller 15;
The anode of second voltage-stabiliser tube 148 other end with the 4th resistance 146 and second diode respectively 147 anode is connected, and the cathode of second voltage-stabiliser tube 148 is connected with one end of the 6th capacitance 149;
One end of 6th capacitance 149 is connected with the cathode of second voltage-stabiliser tube 148, the 6th capacitance 149 The other end respectively the other end with the commutation controller 15, the source electrode of second metal-oxide-semiconductor 12 and the power supply output connect Mouth 17 is connected.
In the third embodiment of the embodiment of the present invention, voltage is formed using resistance, diode, voltage-stabiliser tube and capacitance Rise suppressor, complete soft switching can be realized for second metal-oxide-semiconductor by using the first voltage to rise suppressor 13, be used It can be that first metal-oxide-semiconductor realizes complete soft switching that the second voltage, which rises suppressor 14, be by the second voltage-stabiliser tube 148 Whether no reverse-conducting is to realize that first voltage rises the parallel connection of 13 and second metal-oxide-semiconductor 12 of suppressor.Pass through the first voltage-stabiliser tube 138 Whether whether reverse-conducting is to realize that second voltage rises the parallel connection of 14 and first metal-oxide-semiconductor 11 of suppressor, Sofe Switch electricity is reduced The loss of auxiliary tube in road 10.
Further, in embodiments of the present invention, the commutation controller 15 includes:Inductance 151, transformer the 152, the 3rd Diode 153, the 4th diode 154, the 7th capacitance 155 and commutation capacitor 156;
One end of the inductance 151 source electrode with first metal-oxide-semiconductor 11, the drain electrode of second metal-oxide-semiconductor 12, institute respectively The other end for stating first voltage rising suppressor 13 is connected with one end of second voltage rising suppressor 14, the inductance 151 other end is connected with one end of the transformer 152;
One end of the transformer 152 respectively with the other end of the inductance 151 and the anode of the 3rd diode 153 Be connected, the other end of the transformer 152 respectively with one end of the 7th capacitance 155 and the 4th diode 154 Anode is connected, and the sliding end of the transformer 152 is connected with the cathode of the commutation capacitor 156;
The anode of 3rd diode 153 is connected with one end of the transformer 152, the 3rd diode 153 Cathode be connected respectively with the cathode of the 4th diode 154 and the anode of the commutation capacitor 156;
The anode of 4th diode 154 is connected with the other end of the transformer 152, the 4th diode 154 cathode is connected with the cathode of the 3rd diode 153 and the anode of the commutation capacitor 156 respectively;
The anode of the commutation capacitor 156 cathode with the 3rd diode 153 and the 4th diode 154 respectively Cathode be connected, the cathode of the commutation capacitor 156 is connected with the sliding end of the transformer 152;
One end of 7th capacitance 156 is connected with the other end of the transformer 152, the 7th capacitance 156 The other end rises the other end of suppressor 14, the source electrode of second metal-oxide-semiconductor 12 and the power supply with the second voltage respectively Output interface 17 is connected.
The soft switch circuit of the present invention rises suppressor using first voltage and second voltage rises suppressor and reduces metal-oxide-semiconductor Turn-off power loss, suppressor is risen by capacitance and the first voltage that is composed in series of switch and second voltage rises suppressor, is passed through When switch can control capacitance in parallel with metal-oxide-semiconductor, capacitance suppresses the suppression time of metal-oxide-semiconductor voltage increase rate, reduces circuit and closes Breakdown consumes;First voltage is formed by capacitance, resistance and metal-oxide-semiconductor and rises suppressor and second voltage rising suppressor, passes through metal-oxide-semiconductor Switch speed and conducting resistance difference add soft switch circuit realization cost optimization;By resistance, diode, voltage-stabiliser tube Rise suppressor with the first voltage of capacitance composition and second voltage rises suppressor, pass through the effect solution of diode and voltage-stabiliser tube Determine the problem of auxiliary tube is lost in soft switch circuit.
One of ordinary skill in the art will appreciate that realize all or part of flow in above-described embodiment method, being can be with Relevant hardware is instructed to complete by computer program, the program can be stored in a computer read/write memory medium In, the program is upon execution, it may include such as the flow of the embodiment of above-mentioned each method.Wherein, the storage medium can be magnetic Dish, CD, read-only memory (Read-Only Memory, ROM) or random access memory (Random Access Memory, RAM) etc..
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly Enclose, therefore equivalent variations made according to the claims of the present invention, it is still within the scope of the present invention.

Claims (8)

  1. A kind of 1. soft switch circuit, it is characterised in that including:First metal-oxide-semiconductor, the second metal-oxide-semiconductor, first voltage rise suppressor, Second voltage rises suppressor, commutation controller, power slot and power output interface;Wherein,
    First metal-oxide-semiconductor and the first voltage rise that suppressor is in parallel, and the drain electrode of first metal-oxide-semiconductor is respectively with described the One end that one voltage rises suppressor is connected with the power slot, the source electrode of first metal-oxide-semiconductor respectively with the 2nd MOS The draining of pipe, the first voltage rise the other end of suppressor, the second voltage rises one end of suppressor and described whole One end of stream controller is connected, and is connected by second metal-oxide-semiconductor with the power output interface;
    Second metal-oxide-semiconductor is in parallel with second voltage rising suppressor, while second metal-oxide-semiconductor is controlled with the rectification Device is in parallel, and the source electrode with first metal-oxide-semiconductor, the first voltage rise suppressor respectively for the drain electrode of second metal-oxide-semiconductor One end that the other end, the second voltage rise suppressor is connected with one end of the commutation controller, and by described First metal-oxide-semiconductor is connected with the power slot, and the source electrode of second metal-oxide-semiconductor rises suppressor with the second voltage respectively The other end, the other end of the commutation controller are connected with the power output interface.
  2. 2. soft switch circuit according to claim 1, it is characterised in that the first voltage, which rises suppressor, to be included:The One capacitance and first switch;
    Drain electrode of the one end of first capacitance respectively with power slot and first metal-oxide-semiconductor is connected, first capacitance The other end is connected with one end of the first switch;
    One end of the first switch is connected with first capacitance, and the other end of the first switch is respectively with described first The source electrode of metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, the second voltage rise one end of suppressor and the commutation controller One end be connected.
  3. 3. soft switch circuit according to claim 2, it is characterised in that the second voltage, which rises suppressor, to be included:The Two capacitances and second switch;
    One end of second capacitance source electrode with first metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, described first respectively Voltage rise suppressor the other end be connected with one end of the commutation controller, the other end of second capacitance with it is described One end of second switch is connected;
    One end of the second switch is connected with second capacitance, and the other end of the second switch is respectively with described second The source electrode of metal-oxide-semiconductor, the other end of the commutation controller are connected with the power output interface.
  4. 4. soft switch circuit according to claim 1, it is characterised in that the first voltage, which rises suppressor, to be included:The One resistance, the 3rd capacitance and the 3rd metal-oxide-semiconductor;
    The first resistor is in parallel with the 3rd capacitance, one end leakage with first metal-oxide-semiconductor respectively of the first resistor Pole, one end of the 3rd capacitance are connected with the power slot, and the other end of the first resistor is electric with the described 3rd respectively The drain electrode of the other end of appearance and the 3rd metal-oxide-semiconductor is connected;
    3rd capacitance is in parallel with the first resistor, one end leakage with first metal-oxide-semiconductor respectively of the 3rd capacitance Pole, one end of the first resistor are connected with the power slot, and the other end of the 3rd capacitance is electric with described first respectively The drain electrode of the other end of resistance and the 3rd metal-oxide-semiconductor is connected;
    The drain electrode of 3rd metal-oxide-semiconductor is connected with the other end of the first resistor and the other end of the 3rd capacitance respectively Connect, the source electrode of the 3rd metal-oxide-semiconductor source electrode with first metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, described second respectively One end that voltage rises suppressor is connected with one end of the commutation controller.
  5. 5. soft switch circuit according to claim 4, it is characterised in that the second voltage, which rises suppressor, to be included:The Two resistance, the 4th capacitance and the 4th metal-oxide-semiconductor;
    The second resistance is in parallel with the 4th capacitance, one end of second resistance source with first metal-oxide-semiconductor respectively Pole, the draining of second metal-oxide-semiconductor, one end of the 4th capacitance, the first voltage rise the other end and the institute of suppressor The one end for stating commutation controller is connected, the other end of the second resistance respectively with the other end of the 4th capacitance and described The drain electrode of 4th metal-oxide-semiconductor is connected;
    4th capacitance is in parallel with the second resistance, one end of the 4th capacitance source with first metal-oxide-semiconductor respectively Pole, the draining of second metal-oxide-semiconductor, one end of the second resistance, the first voltage rise the other end and the institute of suppressor The one end for stating commutation controller is connected, the other end of the 4th capacitance respectively with the other end of the second resistance and described The drain electrode of 4th metal-oxide-semiconductor is connected;
    The drain electrode of 4th metal-oxide-semiconductor is connected with the other end of the second resistance and the other end of the 4th capacitance respectively Connect, the source electrode of the 4th metal-oxide-semiconductor other end with the commutation controller, the source electrode of second metal-oxide-semiconductor and described respectively Power output interface is connected.
  6. 6. soft switch circuit according to claim 1, it is characterised in that the first voltage, which rises suppressor, to be included:The Three resistance, the first diode, the first voltage-stabiliser tube and the 5th capacitance;
    The 3rd resistor and first diodes in parallel, one end of the 3rd resistor respectively with first metal-oxide-semiconductor Drain electrode, the cathode of the one or two pole are connected with the power slot, and the other end of the 3rd resistor is respectively with described first The anode of two poles is connected with the anode of first voltage-stabiliser tube;
    First diode is in parallel with the 3rd resistor, the anode of first diode respectively with the 3rd resistor The other end is connected with the anode of first voltage-stabiliser tube, the cathode of first diode respectively with first metal-oxide-semiconductor Drain electrode, one end of the 3rd resistor are connected with the power slot;
    The anode of first voltage-stabiliser tube is connected with the other end of the 3rd resistor and the anode of first diode respectively Connect, the cathode of first voltage-stabiliser tube is connected with one end of the 5th capacitance;
    One end of 5th capacitance is connected with the cathode of first voltage-stabiliser tube, the other end of the 5th capacitance respectively with The source electrode of first metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, the second voltage rise one end of suppressor and described whole One end of stream controller is connected.
  7. 7. soft switch circuit according to claim 6, it is characterised in that the second voltage, which rises suppressor, to be included:The Four resistance, the second diode, the second voltage-stabiliser tube and the 6th capacitance;
    4th resistance and second diodes in parallel, one end of the 4th resistance respectively with first metal-oxide-semiconductor Source electrode, the draining of second metal-oxide-semiconductor, the cathode of second diode, the first voltage rise the other end of suppressor Be connected with one end of the commutation controller, the other end of the 4th resistance respectively with the anode of second diode and The anode of second voltage-stabiliser tube is connected;
    Second diode and the 4th resistor coupled in parallel, the anode of second diode respectively with the 4th resistance The other end is connected with the anode of second voltage-stabiliser tube, the cathode of second diode respectively with first metal-oxide-semiconductor Source electrode, the draining of second metal-oxide-semiconductor, one end of the 4th resistance, the first voltage rise suppressor the other end and One end of the commutation controller is connected;
    The anode of second voltage-stabiliser tube is connected with the other end of the 4th resistance and the anode of second diode respectively Connect, the cathode of second voltage-stabiliser tube is connected with one end of the 6th capacitance;
    One end of 6th capacitance is connected with the cathode of second voltage-stabiliser tube, the other end of the 6th capacitance respectively with The other end of the commutation controller, the source electrode of second metal-oxide-semiconductor are connected with the power output interface.
  8. 8. according to claim 1-7 any one of them soft switch circuits, it is characterised in that the commutation controller includes:Electricity Sense, transformer, the 3rd diode, the 4th diode, the 7th capacitance and commutation capacitor;
    One end of the inductance L source electrode with first metal-oxide-semiconductor, the draining of second metal-oxide-semiconductor, the first voltage respectively The other end and the second voltage for rising suppressor rise one end of suppressor and are connected, the other end of the inductance and described One end of transformer is connected;
    One end of the transformer is connected with the other end of the inductance and the anode of the 3rd diode respectively, the change The other end of depressor is connected with one end of the 7th capacitance and the anode of the 4th diode respectively, the transformer Sliding end is connected with the cathode of the commutation capacitor;
    The anode of 3rd diode is connected with one end of the transformer, the cathode of the 3rd diode respectively with institute The cathode for stating the 4th diode is connected with the anode of the commutation capacitor;
    The anode of 4th diode is connected with the other end of the transformer, the cathode of the 4th diode respectively with The cathode of 3rd diode is connected with the anode of the commutation capacitor;
    The anode of the commutation capacitor is connected with the cathode of the 3rd diode and the cathode of the 4th diode respectively, The cathode of the commutation capacitor is connected with the sliding end of the transformer;
    One end of 7th capacitance is connected with the other end of the transformer, and the other end of the 7th capacitance is respectively and institute The other end, the source electrode of second metal-oxide-semiconductor for stating second voltage rising suppressor are connected with the power output interface.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109417352A (en) * 2017-09-18 2019-03-01 深圳欣锐科技股份有限公司 A kind of soft switch circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109417352A (en) * 2017-09-18 2019-03-01 深圳欣锐科技股份有限公司 A kind of soft switch circuit
CN109417352B (en) * 2017-09-18 2021-11-16 深圳欣锐科技股份有限公司 Soft switching circuit

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