CN207233731U - A kind of packaging system of built-in connection half-bridge circuit - Google Patents

A kind of packaging system of built-in connection half-bridge circuit Download PDF

Info

Publication number
CN207233731U
CN207233731U CN201721139811.5U CN201721139811U CN207233731U CN 207233731 U CN207233731 U CN 207233731U CN 201721139811 U CN201721139811 U CN 201721139811U CN 207233731 U CN207233731 U CN 207233731U
Authority
CN
China
Prior art keywords
pin
core plate
plastic packaging
built
bridge circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201721139811.5U
Other languages
Chinese (zh)
Inventor
廖兵
沈礼福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Crystal Microelectronics Co Ltd
Original Assignee
Suzhou Crystal Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Crystal Microelectronics Co Ltd filed Critical Suzhou Crystal Microelectronics Co Ltd
Priority to CN201721139811.5U priority Critical patent/CN207233731U/en
Application granted granted Critical
Publication of CN207233731U publication Critical patent/CN207233731U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model belongs to semiconductor frame technical field, more particularly, to a kind of packaging system of built-in connection half-bridge circuit.Plastic packaging part and the first pin extended respectively by plastic packaging part, second pin, the 3rd pin, the 4th pin, the 5th pin, first not be electrically connected mutually is equipped with the plastic packaging part and carries core plate and the second load core plate, wherein first load core plate lower end is connected with second pin, second carries core plate surrounding carries the spaced insulation of core plate with first, second load core plate lower end is connected with the 3rd pin, while the first pin or second pin with the 3rd pin without electric connection.Kept after the utility model plastic packaging consistent with the plastic packaging size of current 247 standard profiles of TO, the encapsulation of the half-bridge circuit of built-in connection is completed on the basis of it need not change existing encapsulation producing line equipment, greatly reduce the cost of half-bridge circuit, half-bridge device the space occupied in the circuit board is reduced, improves assembly reliability and efficiency of assembling.

Description

A kind of packaging system of built-in connection half-bridge circuit
Technical field
The utility model belongs to semiconductor frame technical field, more particularly, to a kind of encapsulation of built-in connection half-bridge circuit Device.
Background technology
With the continuous development of circuit design, the purposes of inverter circuit is more and more extensive, the use of single-phase full bridge inverter circuit Way is particularly extensive, and the conversion of electric energy is realized in numerous areas, it is possible to achieve different electric energy conversion purposes.Common is single-phase By 4 MOSFET, either 4 IGBT form each full-bridge circuit including two groups by 2 MOSFET or 2 IGBT to full-bridge circuit The half-bridge circuit of composition.
But independently installed 4 MOSFET are, it is necessary to which the space of 12 pin pads and 4 tube bodies, so wastes significantly The limited space of circuit board, and increased pin pad also increases rosin joint, the risk of desoldering at the same time, product is made Adverse effect is brought with reliability.
Utility model content
The purpose of this utility model is that the defects of being directed to the prior art and deficiency, there is provided a kind of simple in structure, design is closed The packaging system of reason, built-in connection half-bridge circuit easy to use,
To achieve the above object, the technical solution adopted in the utility model is:It includes plastic packaging part, the first pin, the Two pins, the 3rd pin, the 4th pin, the 5th pin;It is characterized in that:It is equipped with what is be not electrically connected mutually in the plastic packaging part First, which carries core plate and second, carries core plate, wherein the first load core plate lower end is connected with second pin, second carries core plate surrounding and the One carries the spaced insulation of core plate, and the second load core plate lower end is connected with the 3rd pin, is welded with the described first load core plate Upper bridge MOSFET chips;Lower bridge MOSFET chips are welded with second load core plate;First pin is the grid of upper bridge MOSFET Pole, second pin are the drain electrode of upper bridge MOSFET, and the 3rd pin is both the source electrode of upper bridge MOSFET, and the leakage of lower bridge MOSFET Pole, the 4th pin are the grids of lower bridge MOSFET, and the 5th pin is the source electrode of lower bridge MOSFET;The first pin or second draw at the same time Foot is with the 3rd pin without electric connection.
Preferably, the described first load core plate top is connected with plastic packaging location hole, bottom then with second pin It is connected.
Preferably, the width of the plastic packaging part is 15.5mm, length 20.5mm.
Preferably, the sum of the first load core plate area and second load core plate area are not more than TO-247 packaging frames Area, and second carry core plate area it is adjustable.
Preferably, first pin, second pin, the 3rd pin, the 4th pin, the 5th pin stretch out Plastic Division The length divided is more than 1.0cm, and pin widths are both greater than 1.0mm.
Preferably, the second pin and the spacing of the 3rd pin are more than 1mm.
With the above structure, the utility model has the beneficial effect that:Compare with conventional frame specification, carried by second Potsherd among core plate, carries core plate and second by first and carries core plate isolation, can built-in encapsulation half-bridge circuit.Not only save significantly The space of power saving road plate, and reduce pin pad, while rosin joint, the risk of desoldering are decreased, effective increase The reliability that product uses, it is easy to plastic packaging, storage.
Brief description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, drawings in the following description are only It is some embodiments of the utility model, for those of ordinary skill in the art, before not making the creative labor property Put, other attached drawings can also be obtained according to these attached drawings.
Fig. 1 is the structure diagram of the utility model.
Fig. 2 is the block schematic illustration of the utility model
Embodiment
Below in conjunction with the accompanying drawings, the utility model is further described.
Referring to as shown in Figure 1, present embodiment adopts the following technical scheme that:It includes plastic packaging part 1, the first pin 21st, second pin 22, the 3rd pin 23, the 4th pin 24, the 5th pin 25.It is equipped with the plastic packaging part 1 and does not connect electrically mutually First connect carries core plate 31 and second and carries core plate 32, and the first load core plate 31 top is connected with plastic packaging location hole 41, lower end and the Two pins 22 are connected, and the second load 32 surrounding of core plate and the first load core plate 31 are completely separated, i.e., first carries core plate 31 and second carries 32 separate type of core plate is isolated, and second carries core plate 32 outside the first load core plate 31.Second carries 32 lower end of core plate and the 3rd Pin 23 is connected, and the first pin 21 and load 31 and the 3rd pin 23 of core plate of second pin 22 and first are all connectionless.
1 volume of plastic packaging part is consistent with current general TO-247 plastic packagings partial volume, width 15.5mm, and length is 20.5mm, therefore encapsulating producing line equipment need not be improved for this frame.
Two carry core plate 31,32 gross areas no more than the area of the current general TO-247 packaging frames used, and first carries The area ratio that core plate 31 and second carries core plate 32 can be adjusted according to the chip for being actually needed encapsulation.First carry core plate 31 with The adjacent boundary spacing of second load core plate 32 is not less than 0.5mm.This spacing width can increase to greatest extent two it is discrete Carry the area of core plate 31,32, and the spacing will not because two carry core plate 31, cause 32 hypotelorisms after plastic packaging first, Two carry 31,32 starveds of core plate, pin hole exception.
First load core plate 31 and the 3rd pin 23, second carry core plate 32 and the junction width and pin of the 4th pin 24 are wide Degree is consistent, and is required to be more than 1mm.So pin is not interfered with carrying the bond strength of core plate, after in addition reducing Resinite flowing when bending part will not be to plastic packaging produces blocking action.
As shown in Fig. 2, before the frame plastic packaging, frame 5 is connected with all pins.Carried out first in the first load core plate 31 The welding of upper bridge MOSFET chips 61, carries out the welding of lower bridge MOSFET chips 62, then by first on the second load core plate 32 The grid for carrying the MOSFET chips 62 in core plate 31 is connected with the first plain conductor 1 of pin 21, and first is carried in core plate 31 The source electrode of MOSFET chips is connected with the 3rd plain conductor 2 72 of pin 23.Second is carried the MOSFET chips in core plate 32 Grid is connected with the 4th plain conductor 3 73 of pin 24, and the source electrode for second being carried the MOSFET chips in core plate 32 draws with the 5th Foot 25 is connected with plain conductor 4 74.Plastic packaging is carried out to the plastic packaging region 1 shown in figure, a plastic packaging part 1 is formed, completes Behind plastic packaging part 1, frame 5 is cut off, so just in the first pin 21, second pin 22, the 3rd pin 23, the 4th pin 24, 5th pin 25 forms the pin of half-bridge circuit, and the first pin is the grid of upper bridge MOSFET, and second pin is upper bridge The drain electrode of MOSFET, the 3rd pin are both the source electrode of upper bridge MOSFET, and the drain electrode of lower bridge MOSFET, the 4th pin bridge at present The grid of MOSFET, the 5th pin are the source electrodes of lower bridge MOSFET.
Present embodiment beneficial effect:Compare with conventional frame specification, the pottery among core plate is carried by second Tile, carries core plate and second by first and carries core plate isolation, can built-in encapsulation half-bridge circuit.Circuit board is not only greatly saved Space, and reduce pin pad, while rosin joint, the risk of desoldering are decreased, it is effectively increased what product used Reliability, it is easy to plastic packaging, storage.
Certainly, the built-in encapsulation that MOSFET used herein forms half-bridge circuit is only that the utility model is preferably implemented Mode, not limits the use scope of the utility model with this, therefore including
The built-in connection encapsulation that the switching devices such as IGBT/MOSFET/ triodes form half-bridge circuit belongs to similar improvement, Belong to and equivalent change is made in the utility model principle, should be included in the scope of protection of the utility model.
Certainly TO-247 encapsulation used herein is only the preferable embodiment of the utility model, is not limited with this The use scope of the use of the new type, therefore, packaging appearance is improved to form the interior of half-bridge circuit including TO-220, TO-3P, TO-264 etc. The frame structure for putting connection encapsulation belongs to similar improvement, belongs to and equivalent change is made in the use of the new type principle, all according to this The equivalent transformation or modification that the Spirit Essence of utility model main technical schemes is done, should all cover the protection in the utility model Within the scope of.

Claims (6)

1. a kind of packaging system of built-in connection half-bridge circuit, it includes plastic packaging part (1), the first pin (21), second pin (22), the 3rd pin (23), the 4th pin (24), the 5th pin (25);It is characterized in that:It is equipped with the plastic packaging part (1) First not be electrically connected mutually carries core plate (31) and second and carries core plate (32), wherein first carries core plate (31) lower end and second pin (22) it is connected, second carries core plate (32) surrounding carries core plate (31) spaced insulation with first, and second carries core plate (32) lower end It is connected with the 3rd pin (23), bridge MOSFET chips (61) is welded with the described first load core plate (31);Second carries core Lower bridge MOSFET chips (62) are welded with plate (32);First pin (21) be upper bridge MOSFET grid, second pin (22) drain electrode for being upper bridge MOSFET, the 3rd pin (23) is both the source electrode of upper bridge MOSFET, and the drain electrode of lower bridge MOSFET, 4th pin (24) is the grid of lower bridge MOSFET, and the 5th pin (25) is the source electrode of lower bridge MOSFET;First pin at the same time (21) or second pin (22) with the 3rd pin (23) without electric connection.
A kind of 2. packaging system of built-in connection half-bridge circuit according to claim 1, it is characterised in that:Described is described First load core plate (31) top is connected with plastic packaging location hole (41), and bottom is then connected with second pin (22).
A kind of 3. packaging system of built-in connection half-bridge circuit according to claim 1, it is characterised in that:The plastic packaging Partly the width of (1) is 15.5mm, length 20.5mm.
A kind of 4. packaging system of built-in connection half-bridge circuit according to claim 1, it is characterised in that:Described first Carry core plate (31) area and second and carry the area that the sum of core plate (32) area is not more than TO-247 packaging frames, and second carries core plate (32) area is adjustable.
A kind of 5. packaging system of built-in connection half-bridge circuit according to claim 1, it is characterised in that:Described first Pin (21), second pin (22), the 3rd pin (23), the 4th pin (24), the 5th pin (25) stretch out plastic packaging part (1) Length is more than 1.0cm, and pin widths are both greater than 1.0mm.
A kind of 6. packaging system of built-in connection half-bridge circuit according to claim 1, it is characterised in that:Described second draws Foot (22) and the spacing of the 3rd pin (23) are more than 1mm.
CN201721139811.5U 2017-09-07 2017-09-07 A kind of packaging system of built-in connection half-bridge circuit Active CN207233731U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721139811.5U CN207233731U (en) 2017-09-07 2017-09-07 A kind of packaging system of built-in connection half-bridge circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721139811.5U CN207233731U (en) 2017-09-07 2017-09-07 A kind of packaging system of built-in connection half-bridge circuit

Publications (1)

Publication Number Publication Date
CN207233731U true CN207233731U (en) 2018-04-13

Family

ID=61860911

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721139811.5U Active CN207233731U (en) 2017-09-07 2017-09-07 A kind of packaging system of built-in connection half-bridge circuit

Country Status (1)

Country Link
CN (1) CN207233731U (en)

Similar Documents

Publication Publication Date Title
CN101834176B (en) Half-bridge drive circuit chip
CN109817612B (en) Encapsulation structure for improving electrothermal performance of welded silicon carbide power module
CN104465549B (en) A kind of power semiconductor modular
CN102254902A (en) IGBT (Insulated Gate Bipolar Translator) power half-bridge module
CN202120917U (en) Large power IGBT flat crimping type packaging structure
CN106971992B (en) A kind of half-bridge power semiconductor module
CN104578708A (en) Combined busbar applied to parallel connection of IGBTs
CN203481226U (en) Large power crimping type IGBT device
CN207233731U (en) A kind of packaging system of built-in connection half-bridge circuit
CN110071079A (en) A kind of power device packaging structure and its method
CN206312886U (en) A kind of packaging system of chopper circuit
CN205050829U (en) High power packaging structure who can be used to surface mounting
CN204793295U (en) Slim power module
CN203521422U (en) Insulated gate bipolar translator (IGBT) layout
CN207199612U (en) A kind of packaging system of half-bridge circuit
CN203104302U (en) Laminated bus bar used for diode clamping type three-electrical level current transformer
CN207165558U (en) A kind of two-side radiation power model of laminated base plate
CN202406000U (en) IGBT half-bridge power module
CN202524305U (en) Strip copper piece structure of frequency converter module
CN211480449U (en) Laminated busbar of high-power inverter
CN202167483U (en) IGBT power half-bridge module
CN201655805U (en) Half bridge drive circuit chip
CN209312767U (en) A kind of encapsulating structure improving solder type silicon carbide power module electric heating property
CN206312893U (en) The packaging system of chopper circuit
CN209087837U (en) A kind of IGBT module

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant