CN202167483U - IGBT power half-bridge module - Google Patents
IGBT power half-bridge module Download PDFInfo
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- CN202167483U CN202167483U CN2011202270755U CN201120227075U CN202167483U CN 202167483 U CN202167483 U CN 202167483U CN 2011202270755 U CN2011202270755 U CN 2011202270755U CN 201120227075 U CN201120227075 U CN 201120227075U CN 202167483 U CN202167483 U CN 202167483U
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- main electrode
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- electrode
- flute profile
- groove
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Abstract
The utility model relates to an IGBT (insulated gate bipolar transistor) power half-bridge module which is characterized in that: a semiconductor chip is connected with a metal-clad ceramic substrate; one side of a main electrode is connected with the metal-clad ceramic substrate; the other end of the main electrode penetrates a shell; the metal-clad ceramic substrate is connected with a copper base which is fixed on the shell; the metal-clad ceramic substrate, the semiconductor chip and the main electrode are insulatingly sealed in the shell by insulating cement; the main electrode comprises a buckling part and a leading-out part which are arranged in the shell and have groove-shaped sections; the side wall of a groove-shaped outer groove of the main electrode is fixed on the metal-clad ceramic substrate; the side wall of an inner groove is close to the wall of the shell; the groove-shaped bottom surface of a first input electrode is arranged relatively to the groove-shaped bottom surface of a second input electrode; and a clapboard stretching downward from the top of the shell is arranged between the groove-shaped bottom surfaces of the first input electrode and the second input electrode and the bottom of the clapboard is sealed by the insulating cement. The IGBT power half-bridge module provided by the utility model has the advantages of having reasonable structure, increasing the area between the two input electrodes which are opposite to each other, reducing main loop inductance and guaranteeing insulating property.
Description
Technical field
The utility model relates to a kind of IGBT power half-bridge module, belongs to the semi-conductor power module technical field.
Background technology
IGBT power half-bridge module mainly by semiconductor chip (igbt chip), cover formations such as cermet substrate (DBC), copper soleplate and housing, main electrode, main electrode one end be fixed on cover on the cermet substrate, the other end passes housing is installed in housing bending back through securing member top.Concentrate and reduce the major loop inductance for fear of the power model heat, can reduce the loop area between positive and negative two input electrodes in the main electrode usually.See shown in Figure 1ly, the electrode of present a kind of power model is flute profile, and two groove face down bondings of the flute profile of main electrode are connected on and cover on the cermet substrate; For reducing the major loop inductance; With distance shrinkage between two input electrodes of main electrode, this main electrode causes the excessive problem of pad stress when adopting big bending can avoid electrode to bend, but also because two input electrode right opposites are merely channel-section; Cause two input electrodes very little, make power model major loop inductance not reach the optimization effect over against area.See shown in Figure 2; Be the power model of present another kind of structure, this main electrode is welded on to be covered on the cermet substrate, because main electrode is through step; Though main electrode is arranged side by side; Can increase by two input electrodes over against area, but can't the distance between two input electrodes be reduced to minimum, in fact can't reach the purpose that reduces the major loop inductance significantly.In addition, when positive and negative electrode in the power model main electrode over against the area close time, under the high voltage situation, be difficult to guarantee insulation property again.
Summary of the invention
The purpose of the utility model provides a kind of rational in infrastructure, can increase between two input electrodes over against area, reduces the major loop inductance, can guarantee the IGBT power half-bridge module of insulation property again.
The utility model is that the technical scheme that achieves the above object is: a kind of IGBT power half-bridge module; Comprise copper soleplate, cover cermet substrate, semiconductor chip and main electrode and housing; Semiconductor chip is connected and covers on the cermet substrate; One side of main electrode with cover that the cermet substrate is connected, opposite side passes housing; Covers the cermet substrate and be connected on the copper soleplate, and copper soleplate is fixed on the housing, cover cermet substrate, semiconductor chip and main electrode with the insulating cement insulated enclosure in housing; It is characterized in that: said main electrode is made up of the bending part and the extension that are arranged in the housing and the cross section is flute profile; The flute profile water jacket sidewall of main electrode bending part be fixed on cover on the cermet substrate, the inside groove sidewall is near inner walls, the flute profile bottom surface of first input electrode in the main electrode and the flute profile bottom surface of second input electrode are oppositely arranged, the dividing plate in the housing is provided with between the flute profile bottom surface of first input electrode and second input electrode and the bottom is arranged on sealing in the insulating cement.
The main electrode of the utility model is made up of the bending part and the extension that are arranged in the housing and the cross section is flute profile; Because the flute profile water jacket sidewall of main electrode bending part is fixed on and covers on the cermet substrate; And main electrode inside groove sidewall is near inner walls, but therefore the dogleg section length of main electrode is longer, and can not only well be released in main electrode bends constantly; The stress that the main electrode weld causes; Rational in infrastructure, and the flute profile bottom surface of two input electrodes of the utility model main electrode is oppositely arranged, and can at utmost dwindle the distance between two input electrodes; And two flute profile bottom surfaces have relatively also increased increasing over against area of two input electrodes, so can reduce the major loop inductance.The utility model has increased dividing plate on housing; Be arranged on through this dividing plate between the flute profile bottom surface of two input electrodes; To playing the good insulation performance effect between two input electrodes, also can improve the mechanical strength of housing simultaneously, and effectively prevent housing distortion through dividing plate.The utility model covers main electrode bottom and dividing plate through insulating cement; Can make the good sealing of formation between dividing plate and two input electrodes; Therefore can increase the creepage distance between two input electrodes through dividing plate; Distance between two input electrodes the most in short-term, even if under the high voltage situation, insulation property that also can fine assurance two input electrodes.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is made further detailed description.
Fig. 1 is that former IGBT power half-bridge module main electrode is connected a kind of structural representation that covers on the cermet substrate.
Fig. 2 is that former IGBT power half-bridge module main electrode is connected the another kind of structural representation that covers on the cermet substrate.
Fig. 3 is the structural representation of the utility model IGBT power half-bridge module.
Fig. 4 is the A-A sectional structure sketch map of Fig. 3.
Fig. 5 is the structural representation of the utility model first electrode.
Wherein: 1-inserts, 2-housing, 2-1-dividing plate, 3-bolt, 4-output electrode; 5-first input electrode, 5-1-draw-in groove, 6-second input electrode, 7-control terminal, 8-insulating cement; 9-copper soleplate, 10-cover the cermet substrate, 11-electrical connector, 12-semiconductor chip.
Embodiment
See Fig. 3, shown in 4; The IGBT power half-bridge module of the utility model comprises copper soleplate 9, covers cermet substrate 10, semiconductor chip 12 and main electrode and housing 2 that semiconductor chip 12 is connected and covers on the cermet substrate 10; See shown in Figure 3; This housing 2 adopts ambroin to process, and is fixed on inserts 1 around the housing 2, conveniently through securing member module is installed in required place; One side of main electrode with cover that cermet substrate 10 is connected, opposite side passes housing 2; The main electrode of the utility model comprises first input electrode 5, second input electrode 6 and output electrode 4 that structure is identical, and control terminal 7 also is fixed on and covers on the cermet substrate 10, will cover cermet substrate 10, semiconductor chip 12 and main electrode and control terminal 7 is connected to form half-bridge circuit through electrical connector 11; Covering cermet substrate 10 is connected on the copper soleplate 9; This copper soleplate 9 is fixed on the housing 2, cover cermet substrate 10, semiconductor chip 12 and main electrode with insulating cement 8 insulated enclosures in housing 2, this insulating cement can adopt silica gel or other glue.See shown in Fig. 3～5; The main electrode of the utility model is made up of the bending part and the extension that are arranged in the housing 2 and the cross section is flute profile, the flute profile water jacket sidewall of main electrode bending part be fixed on cover on the cermet substrate 10, the inside groove sidewall is near housing 2 inwalls, so make the bending part of main electrode longer; And have an advantage that absorbs and discharge mechanical stress and thermal stress; The extension of main electrode overlays on housing 2 tops after passing housing 2 and bending, and the main electrode that overlays on housing 2 tops is provided with via hole, and this via hole is with to be installed in housing 2 top nuts corresponding; The extension that bolt 3 passes via hole on the main electrode main electrode after with bending is installed on the housing 2; The both sides of the utility model main electrode are respectively equipped with draw-in groove, the position of control terminal 7 are carried out spacing through this draw-in groove is convenient, see shown in Figure 5; Be the utility model first input electrode 5, the draw-in groove 5-1 in first input electrode, 5 both sides.
See shown in Figure 4ly, the flute profile bottom surface of first input electrode 5 in the utility model main electrode and the flute profile bottom surface of second input electrode 6 are oppositely arranged, and therefore can the distance between two input electrodes be controlled at minimum; Increased increasing of two input electrodes simultaneously, reached the purpose that reduces the major loop inductance, had dividing plate 2-1 in the housing 2 over against area; Three weeks of this dividing plate 2-1 are connected with inner walls, and the mechanical strength through dividing plate 2-1 improves housing 2 can effectively prevent housing 2 distortion; Between the flute profile bottom surface of the dividing plate 2-1 setting and first input electrode 5 and the flute profile bottom surface of second input electrode 6; And dividing plate 2-1 bottom is arranged on sealing in the insulating cement 8, and the dividing plate 2-1 on the utility model housing 2 wall thickness from top to bottom reduces gradually, and the flute profile bottom surface of first input electrode 5 and second input electrode, 6 flute profile bottom surfaces and dividing plate 2-1 top join; Seal through 8 couples of dividing plate 2-1 of insulating cement bottom; Because insulating cement 8 is very little with housing 2 dielectric constants, so can well guarantee the insulation property of main electrode bottom, is inserted between two input electrodes through the dividing plate 2-1 on the housing 2 simultaneously; Increase the creepage distance between two input electrodes, have good insulation property.
Claims (3)
1. IGBT power half-bridge module; Comprise copper soleplate (9), cover cermet substrate (10), semiconductor chip (12) and main electrode and housing (2); Semiconductor chip (12) is connected and covers on the cermet substrate (10); One side of main electrode with cover that cermet substrate (10) is connected, opposite side passes housing (2); Covering cermet substrate (10) is connected on the copper soleplate (9); Copper soleplate (9) is fixed on the housing (2); Cover cermet substrate (10), semiconductor chip (12) and main electrode with insulating cement (8) insulated enclosure in housing (2), it is characterized in that: said main electrode is made up of with extension the bending part that is arranged in the housing (2) and the cross section is flute profile, the flute profile water jacket sidewall of main electrode bending part be fixed on cover on the cermet substrate (10), the inside groove sidewall is near housing (2) inwall; The flute profile bottom surface of first input electrode (5) in the main electrode and the flute profile bottom surface of second input electrode (6) are oppositely arranged, and the dividing plate (2-1) in the housing (2) is provided with between the flute profile bottom surface of first input electrode (5) and second input electrode (6) and the bottom is arranged in the insulating cement (8) and seals.
2. IGBT power half-bridge module according to claim 1; It is characterized in that: the dividing plate (2-1) of said housing (2) wall thickness from top to bottom reduces gradually, and the flute profile bottom surface of first input electrode (5) and second input electrode (6) flute profile bottom surface and dividing plate (2-1) top join.
3. IGBT power half-bridge module according to claim 1 is characterized in that: said main electrode both sides are respectively equipped with draw-in groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202270755U CN202167483U (en) | 2011-06-30 | 2011-06-30 | IGBT power half-bridge module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202270755U CN202167483U (en) | 2011-06-30 | 2011-06-30 | IGBT power half-bridge module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202167483U true CN202167483U (en) | 2012-03-14 |
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ID=45803292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202270755U Expired - Fee Related CN202167483U (en) | 2011-06-30 | 2011-06-30 | IGBT power half-bridge module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202167483U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254902A (en) * | 2011-06-30 | 2011-11-23 | 江苏宏微科技有限公司 | IGBT (Insulated Gate Bipolar Translator) power half-bridge module |
| CN104584213A (en) * | 2012-08-24 | 2015-04-29 | 三菱电机株式会社 | Semiconductor device |
| CN104112718B (en) * | 2014-07-25 | 2016-12-07 | 西安交通大学 | A kind of low stray inductance GaN power integration module of two-sided layout |
-
2011
- 2011-06-30 CN CN2011202270755U patent/CN202167483U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254902A (en) * | 2011-06-30 | 2011-11-23 | 江苏宏微科技有限公司 | IGBT (Insulated Gate Bipolar Translator) power half-bridge module |
| CN104584213A (en) * | 2012-08-24 | 2015-04-29 | 三菱电机株式会社 | Semiconductor device |
| CN104112718B (en) * | 2014-07-25 | 2016-12-07 | 西安交通大学 | A kind of low stray inductance GaN power integration module of two-sided layout |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120314 Termination date: 20170630 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |