CN207227596U - Clamper assembly for optical quartz crystal electrodiffusion processing - Google Patents
Clamper assembly for optical quartz crystal electrodiffusion processing Download PDFInfo
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- CN207227596U CN207227596U CN201721075877.2U CN201721075877U CN207227596U CN 207227596 U CN207227596 U CN 207227596U CN 201721075877 U CN201721075877 U CN 201721075877U CN 207227596 U CN207227596 U CN 207227596U
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- 239000013078 crystal Substances 0.000 title claims abstract description 100
- 230000003287 optical effect Effects 0.000 title claims abstract description 95
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 239000010453 quartz Substances 0.000 title claims abstract description 86
- 238000012545 processing Methods 0.000 title claims abstract description 24
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 76
- 238000009413 insulation Methods 0.000 claims abstract description 43
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- 239000011810 insulating material Substances 0.000 description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a kind of clamper assembly for optical quartz crystal electrodiffusion processing, for clamping the optical quartz crystal (4) for treating that electrodiffusion is handled；Clamper assembly includes upper clamper clamping plate (11), upper insulation plate (12) and the noble metal electrode plate cathode (13) being fixedly linked successively from top to bottom, further includes the lower gripper clamping plate (21) set gradually from bottom to up, lower insulation plate (22) and noble metal electrode plate anode (23)；The upper clamper clamping plate (11) is connected with lower gripper clamping plate (21) by the way that clamper screw arbor assembly (7) is up and down；Positive electrode lead (15) is set on the noble metal electrode plate cathode (13), negative electrode lead (25) is set on noble metal electrode plate anode (23)；Noble metal electrode plate cathode (13) is located at the surface of noble metal electrode plate anode (23).
Description
Technical field
It the utility model is related to a kind of clamper assembly for optical quartz crystal electrodiffusion processing.
Background technology
Artificial optical quartz crystal has the infrared and good transmitance of ultraviolet band, also with birefringence, optical activity etc.
Optical property, is widely used in the manufacture of the optics such as optical prism, lens, polarizer, optical filter.With optics
The trend of miniaturization, it is increasingly harsh to the quality requirement of optical quartz crystal.It is miscellaneous inside quartz crystal in order to effectively exclude
Matter defect, reduces strip flaw, and carry out impurity diffusion migration using charge compensation improves optical-quality homogeneous as the crystal later stage is carried out
The effective measures of property.
The existing relevant research report of the migration of foreign ion inside quartz crystal.《Along quartz crystal Z axis and the height of X-axis
Piezoelectricity is spread》(HIGH VOLTAGE DIFFUSION ALONG Z-AND X-AXES ON QUARTZ CRYSTAL
1999joint Meeting EFTF-IEEE IFCS 769-772) disclose and can have along the electrodiffusion of piezoelectric quartz crystal Z axis
Effect migration alkaline impurities ion (is usually Na+), to improve the electron mobility of piezoelectric quartz crystal and dielectric properties.At present,
The research of foreign ion inside optical quartz crystal, control striped, refractive index and optical transmittance is removed also not using electrodiffusion
Appear in the newspapers.
Utility model content
The technical problem to be solved by the present invention is to provide a kind of clamping for optical quartz crystal electrodiffusion processing
Device assembly.
In order to solve the above-mentioned technical problem, the utility model provides a kind of folder for optical quartz crystal electrodiffusion processing
Holder component, the optical quartz crystal of electrodiffusion processing is treated for clamping；
Clamper assembly includes upper clamper clamping plate, upper insulation plate and the noble metal electrode being fixedly linked successively from top to bottom
Plate cathode, further includes the lower gripper clamping plate set gradually from bottom to up, lower insulation plate and noble metal electrode plate anode；
The upper clamper clamping plate is connected with lower gripper clamping plate by the way that clamper screw arbor assembly is up and down；
That is, upper clamper clamping plate and lower gripper clamping plate can be moved up and down by clamper screw rod, so as to adjust noble metal
The distance between electrode plate cathode and noble metal electrode plate anode；
Positive electrode lead is set on the noble metal electrode plate cathode, sets negative electrode to draw on noble metal electrode plate anode
Line；
The noble metal electrode plate cathode being fixedly linked with upper insulation plate is located at the noble metal electricity being fixedly linked with lower insulation plate
The surface of pole plate anode.
Improvement as the clamper assembly of the utility model：
Described it is fixedly linked in the noble metal electrode plate cathode being fixedly linked with upper insulation plate and with lower insulation plate
Noble metal electrode plate anode between be arranged alternately noble metal electrode plate anode, noble metal electrode plate cathode, make to be located at upper insulation
Noble metal electrode plate cathode, noble metal electrode plate anode between plate and lower insulation plate are to be arranged alternately successively；
All positive electrode leads are in parallel, and all negative electrode leads are in parallel.
The further of clamper assembly as the utility model is improved：
Clamper screw arbor assembly includes 4 screw rods of arrangement of being square, and the first half of every screw rod and lower half are equipped with
With the matched nut of screw rod；
The corresponding first half for being sleeved on 4 screw rods in 4 angles of upper clamper clamping plate, upper clamper clamping plate rely on position
It is connected in the nut of the screw rod first half with screw slide；
The corresponding lower half for being sleeved on 4 screw rods in 4 angles of lower gripper clamping plate, lower gripper clamping plate rely on position
Nut in screw rod lower half is connected with screw slide.
The further of clamper assembly as the utility model is improved：
The positive electrode lead, negative electrode lead are respectively sleeved in electrode insulation casing.
The further of clamper assembly as the utility model is improved：
The upper insulation plate, lower insulation plate are made by high temperature insulating material, and the high temperature insulating material is high purity quartz
Glass；
Noble metal electrode plate cathode, noble metal electrode plate anode are made by platinum；
Upper clamper clamping plate, lower gripper clamping plate are made by 304 stainless steels.
The utility model is also provided a kind of electricity of the optical quartz crystal carried out using above-mentioned clamper assembly and expanded at the same time
Method is dissipated, is comprised the following steps：
1), treat that the upper and lower surface of the optical quartz crystal of electrodiffusion processing carries out the processing of finish and the depth of parallelism；
2) cleaning treatment, is carried out to the optical quartz crystal obtained by step 1)；
3) optical quartz crystal obtained by step 2), is placed in clamper assembly；
4), electrodiffusion：
First calculated with 1500 ± 100V/cm and open DC high voltage electric field (that is, being powered) after applying DC electric field intensity；
When being then warming up to that insulation 12 ± 1 is small after thermostat temperature with 40 ± 5 DEG C per hour of speed, then with per hour 40 ±
5 DEG C of speed turns off DC high voltage electric field when being cooled to room temperature；
The thermostat temperature is 520~570 DEG C.
Improvement as the electrodiffusion method of above-mentioned optical quartz crystal：
The step 3) is divided into following two modes：
When mode 1, optical quartz crystal are only one piece：
In the noble metal electrode plate cathode being fixedly linked with upper insulation plate and the noble metal being fixedly linked with lower insulation plate
Optical quartz crystal is set between electrode plate anode, by adjusting upper clamper clamping plate, lower gripper clamping plate in clamper screw rod
Overlying relation on component, so that it is guaranteed that two planes up and down of optical quartz crystal are corresponding with noble metal electrode plate
Cathode, noble metal electrode plate anode good contact；
When mode 2, optical quartz crystal are polylith：
One piece of optical quartz crystalline substance is respectively set between neighbouring noble metal electrode plate cathode, noble metal electrode plate anode
Body, by adjusting upper clamper clamping plate, overlying relation of the lower gripper clamping plate on clamper screw arbor assembly, so that it is guaranteed that
Two planes up and down of every piece of optical quartz crystal are respectively corresponding good with noble metal electrode plate cathode, noble metal electrode plate anode
Good contact.
Electrodiffusion further improvements in methods as above-mentioned optical quartz crystal：
Step 1) is：Processing is ground to optical quartz crystal surface (axial plane), surface smoothness Ra reaches 9nm,
The depth of parallelism reaches 0.001mm.
Using the clamper assembly of the utility model, the electrodiffusion that can carry out optical quartz crystal in atmosphere handles work
Skill；Compared with the prior art, have the advantages that simple to operation；The electrodiffusion treatment process can carry out big face to bulky crystal
Long-pending electrodiffusion processing, and the prior art can only carry out electrodiffusion to being cut into quartz-crystal resonator device bar, so this reality
Actual operability is had more with new.
The optical quartz crystal electrodiffusion treatment process carried out using the clamper assembly of the utility model, can be selective
Ground changes the charge compensation state in artificial optical quartz crystal, and to remove the impurity in crystal, corrusion tunnel density, improves light
Learn the optical homogeneity and other performance of quartz crystal.That is, the optical quartz carried out using the clamper assembly of the utility model
Crystal current DIFFUSION TREATMENT technique, can not only remove the impurity in crystal, and can improve crystal optics uniformity, effective drop
Low striped (arteries and veins reason) defect, improves the optical homogeneity and other performance index of optical quartz crystal.
The clamper assembly of the utility model, is cleverly shared for two pieces of crystal using one piece of electrode, effectively saved
Electrode material, also simplify interelectrode insulation measures, improve the efficiency of electrodiffusion experiment.
Brief description of the drawings
Specific embodiment of the present utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is a kind of structure diagram of the clamper assembly for 4 electrodiffusion of monolithic optical quartz crystal；
Fig. 2 is the real use state schematic diagram (monolithic crystal high voltage electric field electrode lead-out structure figure) of Fig. 1；
Fig. 3 is a kind of structure diagram of the clamper assembly for 4 electrodiffusion of polylith optical quartz crystal；
Fig. 4 is the real use state schematic diagram (polylith crystal high voltage electric field electrode lead-out structure figure) of Fig. 3.
Embodiment
The utility model is described further with reference to specific embodiment, but the scope of protection of the utility model is simultaneously
It is not limited only to this.
Embodiment 1, a kind of clamper assembly for 4 electrodiffusion of monolithic optical quartz crystal, as described in Figure 1, including from
Upper clamper clamping plate 11, upper insulation plate 12 and the noble metal electrode plate cathode 13 being fixedly linked successively under, further include under
The supreme lower gripper clamping plate 21 set gradually, lower insulation plate 22 and noble metal electrode plate anode 23, the noble metal electrode plate is just
Pole 13 is located at the surface of noble metal electrode plate anode 23.Positive electrode lead 15, your gold are set on noble metal electrode plate cathode 13
Belong to and negative electrode lead 25 is set on electrode plate anode 23；Positive electrode lead 15, negative electrode lead 25 are respectively sleeved on electrode
In insulating sleeve 6.
Upper clamper clamping plate 11 and lower gripper clamping plate 21 are movably connected by clamper screw arbor assembly 7；It is specific as follows：
Clamper screw arbor assembly 7 includes 4 screw rods of arrangement of being square, and the first half of every screw rod and lower half are equipped with
With the matched nut of screw rod；The corresponding first half for being sleeved on 4 screw rods in 4 angles of upper clamper clamping plate 11, upper folder
Holder clamping plate 11 positioned at the nut of the screw rod first half with screw slide by being connected；4 angles of lower gripper clamping plate 21 are corresponding
The lower half of 4 screw rods is sleeved on, lower gripper clamping plate 21 passes through the nut positioned at screw rod lower half and screw slide phase
Even.
Upper insulation plate 12, lower insulation plate 22 are made by high temperature insulating material；The high temperature insulating material is high purity quartz glass
Glass.
Noble metal electrode plate cathode 13, noble metal electrode plate anode 23 are made by platinum plate；
Upper clamper clamping plate 11, the material of lower gripper clamping plate 21 are made by 304 stainless steels.
Embodiment 2, a kind of clamper assembly for 4 electrodiffusion of polylith optical quartz crystal, as described in Figure 3, it is in reality
Apply and made following improvement on the basis of example 1：
It is fixedly linked in the noble metal electrode plate cathode 13 being fixedly linked with upper insulation plate 12 and with lower insulation plate 22
Noble metal electrode plate anode 23, noble metal electrode plate cathode 13 are arranged alternately between noble metal electrode plate anode 23, is made positioned at upper
Noble metal electrode plate cathode 13, noble metal electrode plate anode 23 between insulation board 12 and lower insulation plate 22 are to be arranged alternately successively
(and position relationship directly over being respectively positioned on)；All positive electrode leads 15 are in parallel, and all negative electrode leads 25 are in parallel.
Remaining is equal to embodiment 1.
Embodiment 3, a kind of electrodiffusion method of optical quartz crystal, follow the steps below successively：
1), by treat electrodiffusion processing optical quartz crystal 4 two optical axis surfaces up and down cut, grind plus
Work, makes its surface smoothness Ra reach 9nm, and upper and lower two optical axis surfaces depth of parallelism reaches 0.001mm.
Remarks explanation：
Two plane up and down on the two optical axis surfaces up and down, i.e. optical quartz crystal 4 of optical quartz crystal 4.
Cutting can use multi-cutting machine or wire cutting machine to carry out, and attrition process is by two optical axises of optical quartz crystal
With 25 μm of uniformly mixed abrasive fluid attrition process, 3 μm of uniformly mixed abrasive fluid attrition process are then first used again in surface；This is
Routine techniques.
2) two optical axis surfaces after processing, are subjected to cleaning treatment；
The cleaning treatment is specially：It is in supersonic wave cleaning machine, the optical quartz after the grinding obtained by step 1) is brilliant
Body 4, which is put into water, be cleaned by ultrasonic 15 minutes, is then placed in deionized water and be cleaned by ultrasonic 15 minutes, is then blown
Wind dries, and finally cleans finished surface with absolute ethyl alcohol, and naturally dry is spare.
This step 2) belongs to routine techniques.
3) optical quartz crystal 4 obtained by step 2), is placed in clamper assembly；
It is divided into following two situations：
1., when the quantity of optical quartz crystal 4 is only one piece, be used for monolithic light using as described in Fig. 1 (embodiment 1)
Learn the clamper assembly of 4 electrodiffusion of quartz crystal；
By adjusting upper clamper clamping plate 11, upper-lower position of the lower gripper clamping plate 21 on clamper screw arbor assembly 7 closes
System, so that it is guaranteed that two planes up and down of optical quartz crystal 4 are corresponding with noble metal electrode plate cathode 13, noble metal electrode
23 good contact of plate anode；
Due to being provided with upper insulation plate 12 between upper clamper clamping plate 11 and noble metal electrode plate cathode 13, accordingly, it is capable to
Ensure to keep insulation between noble metal electrode plate cathode 13 and upper clamper clamping plate 11；
Similarly, due to being provided with lower insulation plate 22 between lower gripper clamping plate 21 and noble metal electrode plate anode 23, because
This, can ensure that and insulation is kept between lower gripper clamping plate 21 and noble metal electrode plate anode 23.
Use state is as shown in Figure 2.
2., when optical quartz crystal 4 quantity for some pieces (>=2 pieces, and the thickness of optical quartz crystal 4 need it is consistent)
When, use the clamper assembly for 4 electrodiffusion of polylith optical quartz crystal as described in Fig. 3 (embodiment 2)；
This some pieces optical quartz crystal 4 stacking successively from top to bottom, is specially：In neighbouring noble metal electricity
One piece of optical quartz crystal 4 is respectively set between pole plate cathode 13, noble metal electrode plate anode 23, by adjusting upper clamper clamping plate
11st, overlying relation of the lower gripper clamping plate 21 on clamper screw arbor assembly 7, so that it is guaranteed that every piece of optical quartz crystal 4
Two planes up and down it is respectively corresponding with noble metal electrode plate cathode 13,23 good contact of noble metal electrode plate anode.
Use state is as shown in Figure 4.
Such as described in Figure 4, altogether there is provided 5 pieces of optical quartz crystals 4, therefore it is followed successively by under upper：Upper clamper folder
Plate 11, upper insulation plate 12, noble metal electrode plate cathode 13, optical quartz crystal 4, the noble metal being fixedly linked with upper insulation plate 12
Electrode plate anode 23, optical quartz crystal 4, noble metal electrode plate cathode 13, optical quartz crystal 4, noble metal electrode plate anode
23rd, optical quartz crystal 4, noble metal electrode plate cathode 13, optical quartz crystal 4, your gold being fixedly linked with lower insulation plate 22
Belong to electrode plate anode 23, lower insulation plate 22, lower gripper clamping plate 21.
The clamp structure of polylith crystal electrodiffusion as described in Figure 3, realizes a plate electrode and is shared for two pieces of crystal, had
The technical advantage for save space, reducing cost, can once realize 4 electrodiffusion of polylith optical quartz crystal.
4), the band for being formed step 3) need electrodiffusion processing optical quartz crystal 4 clamper assembly be put into plus
In hot device, heater fire door is closed, according to crystal thickness, is calculated with 1500V/cm and applies DC electric field intensity, and be powered.
Heated constant temperature temperature is set, heater is heated, and is warming up to constant temperature according to 40 DEG C per hour of speed
Temperature, 520-570 DEG C of the thermostat temperature, i.e. optical quartz crystal transformation temperature should be less than (temperature of transformation temperature is 573 DEG C).
Record heating-up temperature and high voltage electric field current value.After reaching thermostat temperature, when insulation 12 is small, then according to 40 DEG C per hour of speed
Rate cools down, and when temperature is down to room temperature, closes high voltage electric field.
At this time, when for situation 1. (that is, the quantity of optical quartz crystal 4 is only one piece) when, noble metal electrode plate cathode 13
Pass through positive electrode lead 15 and negative electrode lead 25 and external high voltage power supply positive and negative anodes phase respectively with noble metal electrode plate anode 23
Even, so as to fulfill corresponding DC electric field intensity is applied to optical quartz crystal 4.
When for situation 2. (that is, the quantity of optical quartz crystal 4 is some pieces) when, at this time, all noble metal electrode plates
Cathode 13 is in parallel by positive electrode lead 15 thereon, is then connected again with external high voltage power supply cathode.All noble metals
Then electrode plate negative electrode 23 is connected with external high voltage power supply anode again by 25 phase of negative electrode lead thereon and company.So as to
Realization applies corresponding DC electric field intensity to every piece of optical quartz crystal 4.
Remarks explanation：
Above-mentioned " cm " corresponding thickness for referring to every piece of optical quartz crystal 4；Therefore, electric field strength is only with treating electrodiffusion
The thickness of every piece of optical quartz crystal 4 of processing is related, does not have relation with its size.
Quartz crystal is at normal temperatures insulator, will not produce electric current, but, in heating and certain DC high-voltage off field
Foreign ion therein can produce migration, form electric current.The purpose of recording voltage is to prevent excessive voltage from causing between electrode
(that is, between noble metal electrode plate cathode 13 and noble metal electrode plate anode 23) or electrode and clamper (upper clamper clamping plate 11,
Lower gripper clamping plate 21) between electric discharge, the purpose of record current is to monitor the electrodiffusion state of crystal, is represented when electric current is reduced
Foreign ion migration terminates.
6), by the part of the close positive and negative electrode of the optical quartz crystal 4 obtained by step 5) by electrodiffusion processing into
The conventional cutting process of row (such as multi-cutting machine or wire cutting machine can be used to carry out), obtains high optical homogeneity crystal material
Material.This is also routine techniques.
As the optical quartz crystal 4 after the electrodiffusion processing of original optical quartz crystal 4 and the above-mentioned gained of raw material
Impurity content contrast it is as shown in table 1 below, the contrast of corrusion tunnel density index is as shown in table 2 below, arteries and veins manage index contrast
As shown in table 3 below, the contrast of optical homogeneity is as shown in table 4 below.
Remarks explanation：Provided in table 1 below be situation 1. (that is, the quantity of optical quartz crystal 4 is only one piece) when
Data.
Detection data shows, when being situation 2. (that is, when the quantity of optical quartz crystal 4 is 5 pieces), the data obtained and upper feelings
Condition is 1. consistent (no significant difference).
The thickness of optical quartz crystal 4 is 24cm, and gained performance data is as follows：
Table 1, impurity content (ppm)
Most important impurity is the impurity such as aluminium (Al), iron (Fe), sodium (Na), calcium (Ca) in artificial optical quartz crystal.From
In above-mentioned table 1, it may be seen that：Under 4 corresponding impurity content of optical quartz crystal after electrodiffusion processing has significantly
Drop.
Table 2, corrusion tunnel density index
Remarks explanation：The detection foundation of above-mentioned corrusion tunnel density index is GB/T3352-2012；With 23 samples according to
GB/T3352-2012 national standards carry out the detection of corrusion tunnel density index, as a result as described in Table 2.
The dislocation of impurity has been inlayed in synthetic quartzcrystal, the pipe-like hole formed through corrosion is referred to as corrusion tunnel,
The defect can produce stress distortion in crystal, in the optical property application of quartz crystal, form striped (arteries and veins reason) defect, warp
Electrodiffusion technique is crossed, reduces corrusion tunnel density, so as to achieve the purpose that to reduce striped (arteries and veins reason).
Table 3, striped (arteries and veins reason) index
Remarks explanation：The detection foundation of above-mentioned striped (arteries and veins reason) index is GB/T7895-2008；
According to table 3, we learn：By the implementation of the electrodiffusion technique of the utility model, striped (arteries and veins effectively can use
Reason) product improves 26.33 percentage points.The purpose for being handled by late stage process and improving striped (arteries and veins reason) index is realized, its
It is after electrodiffusion to improve the basis mechanism improved, and corrusion tunnel density improves crystal refractive index after reducing, so as to reduce striped
Defect.
Table 4, optical homogeneity
| Rank | Optical homogeneity (refractive index elementary errors Δ n) | |
| It is original | B | ≤5×10-6 |
| After electrodiffusion processing | A | ≤2×10-6 |
Remarks explanation：Above-mentioned optical homogeneity detection foundation is GB/T7895-2008；
Crystalline material optical homogeneity after electrodiffusion process improves a rank, and A grades are brought up to from B grades,
Refractive index elementary errors Δ n concrete numerical values are from≤5 × 10-6Bring up to≤2 × 10-6。
Comparative example 1-1, made the electric field strength in 3 step 4) of embodiment " 1300V/cm " into by " 1500V/cm ", and phase
Soaking time should be extended, i.e. by 12 it is small when be changed to 15 it is small when；Remaining is equal to embodiment 3.
Comparative example 1-2, made the electric field strength in 3 step 4) of embodiment " 1700V/cm " into by " 1500V/cm ", is kept the temperature
Time is constant；Remaining is equal to embodiment 3.
Comparative example 2, made the thermostat temperature in 3 step 4) of embodiment into " 500 DEG C " by " 520-570 DEG C ", remaining is equivalent
In embodiment 3.
Above-mentioned all comparative example is carried out impurity content, striped (arteries and veins reason) index etc. to detect, the data obtained to such as
Described in table 5 below and above-mentioned table 3.
Table 5, impurity content (%)
Comparative example 3, changed upper clamper clamping plate 11, the material of lower gripper clamping plate 21 in embodiment 3 by 304 stainless steels
Into conventional iron；Remaining is equal to embodiment 3.It can cause following defect：The mechanical strength meeting of clamper at the working temperature
Decline, can not effectively clamp electrode and crystal, cause loose contact, produce electrical contact spark, influence electrodiffusion effect.
Finally, it should also be noted that it is listed above be only the utility model several specific embodiments.Obviously,
The utility model is not limited to above example, can also there is many deformations.Those of ordinary skill in the art can be new from this practicality
All deformations that type disclosure is directly exported or associated, are considered as the scope of protection of the utility model.
Claims (4)
1. for the clamper assembly of optical quartz crystal electrodiffusion processing, treat that the optical quartz of electrodiffusion processing is brilliant for clamping
Body (4)；It is characterized in that：
Clamper assembly includes upper clamper clamping plate (11), upper insulation plate (12) and the noble metal being fixedly linked successively from top to bottom
Electrode plate cathode (13), further includes the lower gripper clamping plate (21) set gradually from bottom to up, lower insulation plate (22) and noble metal
Electrode plate anode (23)；
The upper clamper clamping plate (11) and lower gripper clamping plate (21) pass through the up and down phase of clamper screw arbor assembly (7)
Even；
Positive electrode lead (15) is set on the noble metal electrode plate cathode (13), is set on noble metal electrode plate anode (23) negative
Contact conductor (25)；
The noble metal electrode plate cathode (13) being fixedly linked with upper insulation plate (12) is located at what is be fixedly linked with lower insulation plate (22)
The surface of noble metal electrode plate anode (23).
2. the clamper assembly according to claim 1 for optical quartz crystal electrodiffusion processing, it is characterized in that：
In the noble metal electrode plate cathode (13) being fixedly linked with upper insulation plate (12) and described and lower insulation plate (22)
Noble metal electrode plate anode (23), noble metal electrode plate are being arranged alternately between the noble metal electrode plate anode (23) being fixedly linked just
Pole (13), makes noble metal electrode plate cathode (13), noble metal electrode between upper insulation plate (12) and lower insulation plate (22)
Plate anode (23) is to be arranged alternately successively；
All positive electrode leads (15) are in parallel, and all negative electrode leads (25) are in parallel.
3. the clamper assembly according to claim 1 or 2 for optical quartz crystal electrodiffusion processing, it is characterized in that：
Clamper screw arbor assembly (7) includes 4 screw rods of arrangement of being square, the first half of every screw rod and lower half be equipped with
The matched nut of screw rod；
The corresponding first half for being sleeved on 4 screw rods in 4 angles of upper clamper clamping plate (11), upper clamper clamping plate (11) according to
By being connected positioned at the nut of the screw rod first half with screw slide；
The corresponding lower half for being sleeved on 4 screw rods in 4 angles of lower gripper clamping plate (21), lower gripper clamping plate (21) according to
It is connected by the nut positioned at screw rod lower half with screw slide.
4. the clamper assembly according to claim 3 for optical quartz crystal electrodiffusion processing, it is characterized in that：
The positive electrode lead (15), negative electrode lead (25) are respectively sleeved in electrode insulation casing (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721075877.2U CN207227596U (en) | 2017-08-25 | 2017-08-25 | Clamper assembly for optical quartz crystal electrodiffusion processing |
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| CN201721075877.2U CN207227596U (en) | 2017-08-25 | 2017-08-25 | Clamper assembly for optical quartz crystal electrodiffusion processing |
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| CN201721075877.2U Withdrawn - After Issue CN207227596U (en) | 2017-08-25 | 2017-08-25 | Clamper assembly for optical quartz crystal electrodiffusion processing |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107400930A (en) * | 2017-08-25 | 2017-11-28 | 山东博达光电有限公司 | The electrodiffusion facture of optical quartz crystal and clamper assembly used |
| CN109001517A (en) * | 2018-05-02 | 2018-12-14 | 上海大学 | It is a kind of based on all -fiber voltage sensing device for mixing manganese silica fibre |
-
2017
- 2017-08-25 CN CN201721075877.2U patent/CN207227596U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107400930A (en) * | 2017-08-25 | 2017-11-28 | 山东博达光电有限公司 | The electrodiffusion facture of optical quartz crystal and clamper assembly used |
| CN107400930B (en) * | 2017-08-25 | 2023-05-30 | 山东博达光电有限公司 | Electric diffusion treatment method for optical quartz crystal and holder assembly used in same |
| CN109001517A (en) * | 2018-05-02 | 2018-12-14 | 上海大学 | It is a kind of based on all -fiber voltage sensing device for mixing manganese silica fibre |
| CN109001517B (en) * | 2018-05-02 | 2021-04-09 | 上海大学 | All-fiber voltage sensing device based on manganese-doped quartz fiber |
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