CN207217552U - The ultrathin slice power diode of environmental protection - Google Patents

The ultrathin slice power diode of environmental protection Download PDF

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Publication number
CN207217552U
CN207217552U CN201721160365.6U CN201721160365U CN207217552U CN 207217552 U CN207217552 U CN 207217552U CN 201721160365 U CN201721160365 U CN 201721160365U CN 207217552 U CN207217552 U CN 207217552U
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CN
China
Prior art keywords
framework
upper piece
environmental protection
boss face
smaf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201721160365.6U
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Chinese (zh)
Inventor
杨吉明
匡华强
范宇
卞敏龙
程晓云
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu High Diode Semiconductor Co Ltd
Original Assignee
Jiangsu High Diode Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN201721160365.6U priority Critical patent/CN207217552U/en
Application granted granted Critical
Publication of CN207217552U publication Critical patent/CN207217552U/en
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model is related to the ultrathin slice power diode of environmental protection, including body, bottom sheet framework and upper piece framework, upper piece be provided with crystal grain between framework and bottom sheet framework, it is described upper piece boss face is provided between framework and crystal grain;The boss face is square, in the ultrathin slice power diode of the environmental protection, make round boss face into square boss face so that the contact area of upper piece framework and crystal grain greatly promotes, change grain size, so that 400W's uses power ascension the TVS product power is got a promotion to 600W;Moreover, product design is SMAF, SMAF products are mainly thinner than SMB, small etc., and SMAF reduces by a process flow than SMB, production cost is reduced, and client applies upper limitation to the On-line Product road plate, improves TVS practical value, energy loss is reduced, improves its environmental protection characteristic.

Description

The ultrathin slice power diode of environmental protection
Technical field
Field of power electronics is the utility model is related to, more particularly to a kind of ultrathin slice power diode of environmental protection.
Background technology
Transient Voltage Suppressor (TVS) have the response time is fast, transient power is big, leakage current is low, breakdown voltage deviation is small, Clamp voltage be relatively easy to control, without damage limit, small volume the advantages that.At present be widely used to computer system, communication apparatus, The every field such as AC/DC power supply, automobile, household electrical appliance, instrument and meter.
At present, the basic condition of prior art is essentially identical, structure composition or technical recipe and determination point:Transient state (transition) Voltage suppression diode abbreviation TVS device, under the conditions of defined applied in reverse, when the instantaneous overvoltage arteries and veins for bearing a high-energy When rushing, its working impedance can be down to very low conduction value immediately, it is allowed to high current by, and by voltage clamping to predeterminated level, So as to effectively protect the precision components in electronic circuit against damages.TVS product structures are formed with framework, tin cream, crystal grain, Epoxy resin forms.Boss contact is smaller with the contact area of crystal grain using round boss face, and power can only achieve 400W, existing Be SMB encapsulation mostly, SMB encapsulation is thicker, and process is more, so considerably increases production cost, causes the wave of the energy Take.
Utility model content
The technical problems to be solved in the utility model is:For overcome the deficiencies in the prior art, there is provided a kind of environmental protection is ultra-thin Matrix formula power diode.
Technical scheme is used by the utility model solves its technical problem:A kind of ultrathin pole of slice power two of environmental protection Pipe, including body, the inside plastic packaging of body have bottom sheet framework and upper piece framework, and the upper piece framework is located at the upper of bottom sheet framework Side, it is described upper piece be provided with crystal grain between framework and bottom sheet framework, it is described upper piece boss face is provided between framework and crystal grain;
The boss face is square;
The body is encapsulated using SMAF.
Preferably, the body is made up of epoxy resin.
Preferably, one end of upper piece framework is located at the outside of body, one end of the bottom sheet framework is located at body Outside and be located at the both sides of body with upper piece framework.
The beneficial effects of the utility model are that in the ultrathin slice power diode of the environmental protection, round boss face is made into Square boss face changes grain size, so that 400W's makes so that the contact area of upper piece framework and crystal grain greatly promotes 600W is promoted to power, the TVS product power is got a promotion;Moreover, product design SMAF, SMAF product are main It is thinner than SMB, small etc., and SMAF reduces by a process flow than SMB, reduces production cost, and client is to the On-line Product road Plate applies upper limitation, improves TVS practical value, reduces energy loss, improves its environmental protection characteristic.
Brief description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples.
Fig. 1 is the structural representation of the ultrathin slice power diode of environmental protection of the present utility model;
In figure:1. bottom sheet framework, 2. upper piece frameworks, 3. crystal grain, 4. bodies, 5. boss faces.
Embodiment
The utility model is described in further detail presently in connection with accompanying drawing.These accompanying drawings are simplified schematic diagram, Only illustrate basic structure of the present utility model in a schematic way, therefore it only shows the composition relevant with the utility model.
As shown in figure 1, a kind of ultrathin slice power diode of environmental protection, including body 4, under the inside plastic packaging of body 4 has Piece framework 1 and upper piece framework 2, the upper piece framework 2 are located at the top of bottom sheet framework 1, upper piece framework 2 and the bottom sheet framework 1 Between be provided with crystal grain 3, it is described upper piece boss face 5 is provided between framework 2 and crystal grain 3;
The boss face 5 is square;
The body 4 is encapsulated using SMAF.
Preferably, the body 4 is made up of epoxy resin.
Preferably, one end of upper piece framework 2 is located at the outside of body 4, one end of the bottom sheet framework 1 is positioned at this The outside of body 4 and the both sides for being located at body 4 with upper piece framework 2.
Wherein, the contact of boss face 5 is smaller with the contact area of crystal grain 3 using round boss face 5, and power can only achieve 400W, by making round boss face 5 into square boss face 5 so that the contact area of upper piece framework 2 and crystal grain 3 carries significantly Rise, change the size of crystal grain 3, so that 400W's uses power ascension the TVS product power is got a promotion to 600W.
In fact:SMA, SMB, SMC, it is a kind of packing forms of diode product, three's difference is little, simply specific It is of different sizes in small product size, SMA<SMB<SMC;SMAF is one kind in SMA encapsulation.
It is now SMAF by the product design moreover, TVS 600W product is mainly SMB product before, SMAF products Mainly thinner than SMB, small etc. and SMAF reduces by a process flow than SMB, reduces production cost and client to the On-line Product Road plate applies upper limitation, improves TVS practical value, reduces energy loss, improves its environmental protection characteristic.
Compared with prior art, in the ultrathin slice power diode of the environmental protection, round boss face 5 is made into square boss Face 5 changes the size of crystal grain 3, so that 400W's uses work(so that the contact area of upper piece framework 2 and crystal grain 3 greatly promotes Rate is promoted to 600W, the TVS product power is got a promotion;Moreover, product design SMAF, SMAF product mainly compare SMB is thin, small etc., and SMAF reduces by a process flow than SMB, reduces production cost, and client is to the On-line Product road plate Using upper limitation, TVS practical value is improved, reduces energy loss, improve its environmental protection characteristic.
Using it is above-mentioned according to desirable embodiment of the present utility model as enlightenment, pass through above-mentioned description, related work people Member can carry out various changes and amendments in the range of without departing from this item utility model technological thought completely.This item is real The content being not limited to new technical scope on specification, it is necessary to which its technology is determined according to right Property scope.

Claims (3)

1. a kind of ultrathin slice power diode of environmental protection, it is characterised in that including body, the inside plastic packaging of body has bottom sheet frame Frame and upper piece framework, the upper piece framework are located at the top of bottom sheet framework, it is described upper piece crystalline substance is provided between framework and bottom sheet framework Grain, it is described upper piece boss face is provided between framework and crystal grain;
The boss face is square;
The body is encapsulated using SMAF.
2. the ultrathin slice power diode of environmental protection as claimed in claim 1, it is characterised in that the body is by epoxy resin It is made.
3. the ultrathin slice power diode of environmental protection as claimed in claim 1 or 2, it is characterised in that upper piece framework One end is located at the outside of body, and one end of the bottom sheet framework is located at the outside of body and is located at the two of body with upper piece framework Side.
CN201721160365.6U 2017-09-11 2017-09-11 The ultrathin slice power diode of environmental protection Active CN207217552U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721160365.6U CN207217552U (en) 2017-09-11 2017-09-11 The ultrathin slice power diode of environmental protection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721160365.6U CN207217552U (en) 2017-09-11 2017-09-11 The ultrathin slice power diode of environmental protection

Publications (1)

Publication Number Publication Date
CN207217552U true CN207217552U (en) 2018-04-10

Family

ID=61824280

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721160365.6U Active CN207217552U (en) 2017-09-11 2017-09-11 The ultrathin slice power diode of environmental protection

Country Status (1)

Country Link
CN (1) CN207217552U (en)

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