CN207183286U - Back contacts crystal silicon battery electrode screen structure - Google Patents
Back contacts crystal silicon battery electrode screen structure Download PDFInfo
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- CN207183286U CN207183286U CN201721165582.4U CN201721165582U CN207183286U CN 207183286 U CN207183286 U CN 207183286U CN 201721165582 U CN201721165582 U CN 201721165582U CN 207183286 U CN207183286 U CN 207183286U
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- main gate
- gate line
- pole main
- negative pole
- crystal silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of back contacts crystal silicon battery electrode screen structure, it is arranged on the back surface of crystal silicon battery, p-type doped region and n-type doping area are provided with the back surface of crystal silicon battery, the electrode screen structure includes just superfine grid line, the thin grid line of negative pole, positive pole main gate line and negative pole main gate line；The just superfine grid line is arranged in the back surface of crystal silicon battery with the thin grid line of the negative pole in interdigitated successively lateral cross, is respectively used to collect p-type doped region and the electric current in n-type doping area；The positive pole main gate line and the negative pole main gate line back surface of the longitudinal arrangement in crystal silicon battery in parallel to each other；The positive pole main gate line only with the just superfine grid line electrical communication, the negative pole main gate line only with the thin grid line electrical communication of the negative pole.The problem of structure can effectively avoid scrapping caused by unidentified print direction or measurement direction or repetition measurement problem, and high degree simplifies printing and the test identification direction of production process, improves production efficiency.
Description
Technical field
The utility model crystal silicon solar battery technical field, more particularly to a kind of back contacts crystal silicon battery electrode half tone knot
Structure.
Background technology
Photovoltaic generation is one of current major way for utilizing solar energy, and solar energy power generating is cleaned, safely, just because of it
The features such as sharp, efficient, it has also become countries in the world common concern and the new industry given priority to.Therefore, further investigate and utilize
Solar energy resources, to alleviating crisis of resource, tool of improving the ecological environment is of great significance.
In order to increase the market competitiveness, it is imperative that drop originally puies forward effect, improves product efficiency beautifully into each photovoltaic enterprise
The only way which must be passed.
However, current high-efficiency battery has complex manufacturing technology in itself, harsh is required to environment cleanliness, yields with
The problem of qualification rate is low, therefore the direction in line with low production cost and simplified production of high-efficiency battery is fast-developing.
Utility model content
The utility model proposes a kind of back contacts crystal silicon battery electrode screen structure, to avoid because production process is not right
The problem of identification of half tone figure causes positive and negative main gate line to be connected misalignment with differentiation and follow-up test Problem-Error.
The utility model provides following technical scheme：
A kind of back contacts crystal silicon battery electrode screen structure, the back surface of crystal silicon battery is arranged on, the crystal silicon battery
P-type doped region and n-type doping area are provided with back surface, the back contacts crystal silicon battery electrode screen structure includes just superfine grid
The thin grid line of line, negative pole, positive pole main gate line and negative pole main gate line, wherein：
In interdigitated, lateral cross is arranged in the crystal silicon battery to the just superfine grid line successively with the thin grid line of the negative pole
Back surface, be respectively used to collect the p-type doped region and the electric current in n-type doping area；
The positive pole main gate line and the negative pole main gate line back of the body table of the longitudinal arrangement in the crystal silicon battery in parallel to each other
Face；
The positive pole main gate line is only only thin with the negative pole with the just superfine grid line electrical communication, the negative pole main gate line
Grid line electrical communication.
In one embodiment of the present utility model, the infall of the positive pole main gate line and the thin grid line of the negative pole, institute
State negative pole main gate line and the infall of the just superfine grid line is provided with insulation material layer, completely cut off the positive pole main gate line and institute
State the electric connection between the thin grid line of negative pole, between the negative pole main gate line and the just superfine grid line.
In one embodiment of the present utility model, the quantity of the positive pole main gate line is two or more, is distributed respectively
In the low order end and high order end of the crystal silicon battery；The negative pole main gate line be evenly distributed on the positive pole main gate line of low order end with most
Between the positive pole main gate line of left end.
In one embodiment of the present utility model, the quantity of the negative pole main gate line is two or more.
In one embodiment of the present utility model, the quantity of the negative pole main gate line is two or more, is distributed respectively
In the low order end and high order end of the crystal silicon battery；The positive pole main gate line be evenly distributed on the negative pole main gate line of low order end with most
Between the negative pole main gate line of left end.
In one embodiment of the present utility model, the quantity of the positive pole main gate line is two or more.
The utility model is allowed to compared with prior art, the advantages of following and product be present due to using above technical scheme
Pole effect：
1) back contacts crystal silicon battery electrode screen structure provided by the utility model, by control positive pole main gate line only with institute
State just superfine grid line electrical communication, the negative pole main gate line only with the thin grid line electrical communication of the negative pole, so as to avoid because not
Scrapped caused by identification print direction or measurement direction or repetition measurement problem, high degree simplify the printing and test of production process
The problem of identifying direction, high degree improves production efficiency.
2) infall of positive pole main gate line and the thin grid line of the negative pole, the negative pole main gate line and the just superfine grid are passed through
The infall of line is provided with insulation material layer, completely cuts off between the positive pole main gate line and the thin grid line of the negative pole, the negative pole
Electric connection between main gate line and the just superfine grid line, it is simple and reliable.
Brief description of the drawings
Fig. 1 is the schematic diagram of the back contacts crystal silicon battery electrode screen structure of the utility model embodiment.
In figure：The just superfine grid line of 100- crystal silicon batteries, 110-, the thin grid line of 120- negative poles, 210- positive poles main gate line, 220- are born
Pole main gate line.
Embodiment
Below in conjunction with the drawings and specific embodiments to the utility model proposes back contacts crystal silicon battery electrode screen structure
It is described in further detail.According to following explanation and claims, advantages and features of the present utility model will become apparent from.Need
Bright, accompanying drawing uses using very simplified form and non-accurately ratio, only to convenience, lucidly aids in illustrating
The purpose of the utility model embodiment.
Referring to Fig. 1, present embodiment discloses a kind of back contacts crystal silicon battery electrode screen structure, crystal silicon battery is arranged on
100 back surface, p-type doped region and n-type doping area are provided with the back surface of the crystal silicon battery 100, and the back contacts are brilliant
Silion cell electrode screen structure includes just superfine grid line 110, the thin grid line 120 of negative pole, positive pole main gate line 210 and negative pole main gate line
220, wherein：
In interdigitated, lateral cross is arranged in the crystalline substance to the just superfine grid line 110 successively with the thin grid line 120 of the negative pole
The back surface of silion cell 100, it is respectively used to collect the p-type doped region and the electric current in n-type doping area；The positive pole main gate line
210 with the negative pole main gate line 220 back surface of the longitudinal arrangement in the crystal silicon battery 100 in parallel to each other；The positive pole master
Grid line 210 is only electric with the just superfine electrical communication of grid line 110, the negative pole main gate line 220 grid line 120 only thin with the negative pole
Property connection.By controlling positive pole main gate line only only to be born with the just superfine grid line electrical communication, the negative pole main gate line with described
Superfine grid line electrical communication, scrapped so as to avoid caused by unidentified print direction or measurement direction or repetition measurement problem, pole
The problem of printing of big simplifying production process and test identification direction, high degree improves production efficiency.
In order to effectively completely cut off between the positive pole main gate line 210 and the thin grid line 120 of the negative pole and negative pole main gate line
Electric connection between 220 and the just superfine grid line 110, as embodiment, the positive pole main gate line 210 with it is described
Infall, the negative pole main gate line 220 and the infall of the just superfine grid line 110 of the thin grid line 120 of negative pole are provided with absolutely
Edge material layer, to completely cut off between the positive pole main gate line 210 and the thin grid line 120 of the negative pole, the negative pole main gate line 220 and institute
State the electric connection between just superfine grid line 110.
In one embodiment of the present utility model, the quantity of the positive pole main gate line 210 is two or more, is divided respectively
Low order end and high order end of the cloth in the crystal silicon battery；The negative pole main gate line 220 is evenly distributed on the positive pole main grid of low order end
Between line and the positive pole main gate line of high order end, as shown in Figure 1.And it is used as an optional mode, the quantity of the negative pole main gate line 220
For two.And the left half of positive pole main gate line of crystal silicon battery and negative pole main gate line and the right half of positive pole main gate line of crystal silicon battery and
Negative pole main gate line is symmetrical relative to the crystal silicon battery longitudinal centre line.So as to be effectively prevented from leading thin grid line figure pair
The problems such as answering incomplete or test errors.Because, it is assumed that main gate line is from left to right successively according to positive pole main gate line, negative pole main grid
Line, positive pole main gate line, negative pole main gate line are arranged in order, then the problem of certainly existing both positive and negative polarity to be distinguished when producing, if not differentiating between
Then necessarily cause to lead the problems such as thin grid line figure corresponds to incomplete or test errors.
Certainly, as another embodiment, the quantity that can also set the negative pole main gate line 220 is two, respectively
It is distributed in the low order end and high order end of the crystal silicon battery 100；The positive pole main gate line 210 is evenly distributed on the negative pole of low order end
Between main gate line and the negative pole main gate line of high order end.And be used as an optional mode, the quantity of the positive pole main gate line for two or
More.Its principle is similar with the mode shown in Fig. 1, therefore does not state excessively.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the scope of the utility model
Calmly, any change, the modification that the those of ordinary skill in the utility model field does according to the disclosure above content, belonging to right will
Seek the protection domain of book.
Claims (6)
1. a kind of back contacts crystal silicon battery electrode screen structure, it is arranged on the back surface of crystal silicon battery, the back of the body of the crystal silicon battery
P-type doped region and n-type doping area are provided with surface, it is characterised in that the back contacts crystal silicon battery electrode screen structure bag
Just superfine grid line, the thin grid line of negative pole, positive pole main gate line and negative pole main gate line are included, wherein：
The just superfine grid line is arranged in the back of the body of the crystal silicon battery with the thin grid line of the negative pole in interdigitated successively lateral cross
Surface, it is respectively used to collect the p-type doped region and the electric current in n-type doping area；
The positive pole main gate line and the negative pole main gate line back surface of the longitudinal arrangement in the crystal silicon battery in parallel to each other；
The positive pole main gate line only with the just superfine grid line electrical communication, the negative pole main gate line only with the thin grid line of the negative pole
Electrical communication.
2. back contacts crystal silicon battery electrode screen structure as claimed in claim 1, it is characterised in that the positive pole main gate line with
Infall, the negative pole main gate line and the infall of the just superfine grid line of the thin grid line of negative pole are provided with insulating materials
Layer, completely cuts off between the positive pole main gate line and the thin grid line of the negative pole, between the negative pole main gate line and the just superfine grid line
Electric connection.
3. back contacts crystal silicon battery electrode screen structure as claimed in claim 1 or 2, it is characterised in that the positive pole main grid
The quantity of line is two, is respectively distributed to the low order end and high order end of the crystal silicon battery；The negative pole main gate line is uniformly distributed
Between the positive pole main gate line of low order end and the positive pole main gate line of high order end.
4. back contacts crystal silicon battery electrode screen structure as claimed in claim 3, it is characterised in that the negative pole main gate line
Quantity is two or more.
5. back contacts crystal silicon battery electrode screen structure as claimed in claim 1 or 2, it is characterised in that the negative pole main grid
The quantity of line is two, is respectively distributed to the low order end and high order end of the crystal silicon battery；The positive pole main gate line is uniformly distributed
Between the negative pole main gate line of low order end and the negative pole main gate line of high order end.
6. back contacts crystal silicon battery electrode screen structure as claimed in claim 5, it is characterised in that the positive pole main gate line
Quantity is two or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721165582.4U CN207183286U (en) | 2017-09-12 | 2017-09-12 | Back contacts crystal silicon battery electrode screen structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721165582.4U CN207183286U (en) | 2017-09-12 | 2017-09-12 | Back contacts crystal silicon battery electrode screen structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207183286U true CN207183286U (en) | 2018-04-03 |
Family
ID=61746123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721165582.4U Active CN207183286U (en) | 2017-09-12 | 2017-09-12 | Back contacts crystal silicon battery electrode screen structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207183286U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11588060B1 (en) | 2022-02-24 | 2023-02-21 | Solarlab Aiko Europe Gmbh | Electrode structure of back contact cell, back contact cell, back contact cell module, and back contact cell system |
-
2017
- 2017-09-12 CN CN201721165582.4U patent/CN207183286U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11588060B1 (en) | 2022-02-24 | 2023-02-21 | Solarlab Aiko Europe Gmbh | Electrode structure of back contact cell, back contact cell, back contact cell module, and back contact cell system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200803 Address after: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Co-patentee after: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Co-patentee after: State Power Investment Group Qinghai Photovoltaic Industry Innovation Center Co., Ltd Address before: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. |
|
| TR01 | Transfer of patent right |