CN207180156U - A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas - Google Patents
A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas Download PDFInfo
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- CN207180156U CN207180156U CN201721183202.XU CN201721183202U CN207180156U CN 207180156 U CN207180156 U CN 207180156U CN 201721183202 U CN201721183202 U CN 201721183202U CN 207180156 U CN207180156 U CN 207180156U
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Abstract
The utility model proposes a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas, raw material tracheae is passed through in heat exchanger, condense tracheae, flue gas leading and air supply pipe, raw material tracheae is connected to the air inlet of low-temperature fractionating tower, the gas outlet of low-temperature fractionating tower is connected to flue gas leading, the liquid outlet connected drainage pipe of low-temperature fractionating tower, discharging tube is provided with the first purity detector, discharge opeing three tunnel parallel connections of pipe end point set the first cryogenic liquid storage tank respectively, second cryogenic liquid storage tank and the 3rd cryogenic liquid storage tank, first cryogenic liquid storage tank, the first valve is set respectively on the inlet of second cryogenic liquid storage tank and the 3rd cryogenic liquid storage tank, second valve and the 3rd valve;The liquid outlet of first cryogenic liquid storage tank, the second cryogenic liquid storage tank and the 3rd cryogenic liquid storage tank is respectively connecting to the inlet end of air supply pipe, and the outlet side of air supply pipe sets gradually the second purity detector and flowmeter.The utility model thoroughly solves the problems, such as that quality of filling gas is unqualified and caused.
Description
Technical field
It the utility model is related to a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas.
Background technology
Monocrystalline silicon crystal pulling furnace exhaust gas is rich in argon gas, and argon content reaches more than 98%, by routine processing method by its
In impurity oil, dust, CO, O2、CO2, the gas component that is obtained after disposing such as moisture be argon gas, nitrogen, hydrogen, wherein argon
Gas accounting more than 99%, because these three gas boiling points differ larger, it is easy to separate three using cryogenic rectification technology, from
Rectifier bottoms obtain high-purity liquid argon gas, are the nitrogen and hydrogen for needing to discharge at the top of rectifying column.
Monocrystalline silicon crystal pulling furnace institute crystal pulling very high purity, therefore very high is required to high-purity argon gas, once high-purity argon gas purity
It is unqualified and enter crystal pulling furnace, it will it is unqualified to institute's crystal pulling or even fatal damage is caused to crystal pulling furnace, therefore ensure into
The high-purity argon gas quality for entering monocrystalline silicon crystal pulling furnace is extremely important.
When conventional low temperature method richness argon gas extracts high-purity argon gas, directly high-purity argon, Ran Houjin are extracted from rectifier bottoms
Enter the heat exchanger of system using after cold, then detection argon gas impurity content supplies client.However, argon gas defects inspecting has hysteresis
Property, if argon gas impurity is exceeded suddenly, its exceeded impurity, which enters detecting instrument, certain time, when instrument detects contaminant overstandard
When, it is switched to standby high-purity gas supply and has had little time, impure not pure gas comes into crystal pulling furnace.In addition, artificial
Switching will cause more not pure gas to enter crystal pulling furnace not in time.Case above, will all cause not pure gas enter crystal pulling
Stove, damage purity of monocrystalline silicon even injure to damaging property of crystal pulling furnace.
Utility model content
The utility model proposes a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas, thoroughly solve
Quality of filling gas of having determined unqualified the problem of causing the crystal-pulling of crystal pulling furnace institute to be damaged or destroyed crystal pulling furnace, while the cold of liquid argon is also
To making full use of.
What the technical solution of the utility model was realized in:
A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas, including heat exchanger 1, cryogenic rectification
Tower 8, the first cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13, wear in the heat exchanger 1
Cross raw material tracheae 2, condensation tracheae 3, flue gas leading 4 and air supply pipe 7, the raw material tracheae 2 and be connected to the air inlet of low-temperature fractionating tower 8
Mouthful, the gas outlet of the low-temperature fractionating tower 8 is connected to flue gas leading 4, the liquid outlet connected drainage pipe 9 of the low-temperature fractionating tower 8, institute
State discharging tube 9 and be provided with the first purity detector 10, three tunnel parallel connections of the end of discharging tube 9 point set the first cryogenic liquid respectively
Storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13, first cryogenic liquid storage tank 11, the second low temperature
First valve 14, the second valve 15 and the 3rd valve are set respectively on the inlet of the cryogenic liquid storage tank 13 of wet tank 12 and the 3rd
Door 16;The liquid outlet of first cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13 point
The inlet end of air supply pipe 7 is not connected to, and the outlet side of the air supply pipe 7 sets gradually the second purity detector 20 and flowmeter
21。
Preferably, the raw material tracheae 2 forms heat exchange structure with condensation tracheae 3, flue gas leading 4, air supply pipe 7.
Preferably, the inlet end of the air supply pipe 7 is additionally provided with a loop branch pipe 5, and the loop branch pipe 5 is connected to low temperature essence
The inlet of tower 8 is evaporated, and loop branch pipe 5 is provided with the 4th valve 6.
Preferably, first cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13
It is upper that first booster 17, the second booster 18 and the 3rd booster 19 are set respectively.
Preferably, first cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13
It is upper to be connected to downtake pipe 22, the blast pipe 24 of second exhaust pipe 23 and the 3rd, the downtake pipe 22, second exhaust pipe respectively
23 and the 3rd are respectively equipped with the 5th valve 25, the 6th valve 26 and the 7th valve 27, and downtake pipe 22, on blast pipe 24
Two blast pipes 23 and the 3rd blast pipe 24 are connected to vaporizer 28 respectively, and the vaporizer 28 is connected to the outlet of air supply pipe 7
End.
Had the beneficial effect that caused by the utility model:Once the high-purity argon gas purity of output is unqualified, due to defects inspecting
Delay or operational error, then the underproof gas of purity can enter cryogenic liquid storage tank (such as first cryogenic liquid storage tank), but
It is cryogenic liquid storage tank (such as the second cryogenic liquid storage tank) institute's supplied gas for supplying or qualified.At this moment first is detected
Gas is unqualified in cryogenic liquid storage tank, then liquid therein is discharged into unstripped gas, readjusts rectifying column operating mode, adjustment
Line replacement is entered to the first cryogenic liquid storage tank using qualified high-purity argon gas after qualified, until the qualified ability of product therein is outside
Supply, ensure the stability of quality of filling gas.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, drawings in the following description are only
It is some embodiments of the utility model, for those of ordinary skill in the art, is not paying the premise of creative work
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas as shown in Figure 1, including heat exchanger
1st, low-temperature fractionating tower 8, the first cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13, it is described
In heat exchanger 1 cryogenic rectification is connected to through raw material tracheae 2, condensation tracheae 3, flue gas leading 4 and air supply pipe 7, the raw material tracheae 2
The air inlet of tower 8, the gas outlet of the low-temperature fractionating tower 8 are connected to flue gas leading 4, the liquid outlet connection of the low-temperature fractionating tower 8
Discharging tube 9, the discharging tube 9 are provided with the first purity detector 10, and three tunnel parallel connections of the end of discharging tube 9 point set the respectively
One cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13, first cryogenic liquid storage tank
11st, first valve 14, the second valve are set respectively on the inlet of the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13
The valve 16 of door 15 and the 3rd;First cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank
13 liquid outlet is respectively connecting to the inlet end of air supply pipe 7, and the outlet side of the air supply pipe 7 sets gradually the second purity detector
20 and flowmeter 21.
Raw material tracheae 2 forms heat exchange structure, raw material tracheae with condensation tracheae 3, flue gas leading 4, air supply pipe 7 in the present embodiment
2, using the low-temperature receiver in other pipes, unstripped gas are cooled.
The inlet end of air supply pipe 7 is additionally provided with a loop branch pipe 5, and the loop branch pipe 5 is connected to the feed liquor of low-temperature fractionating tower 8
Mouthful, and loop branch pipe 5 is provided with the 4th valve 6;First cryogenic liquid storage tank 11, the second cryogenic liquid storage tank 12 and the 3rd
First booster 17, the second booster 18 and the 3rd booster 19 are set respectively in cryogenic liquid storage tank 13;First low temperature
Downtake pipe 22, second is connected to respectively in wet tank 11, the second cryogenic liquid storage tank 12 and the 3rd cryogenic liquid storage tank 13
The blast pipe 24 of blast pipe 23 and the 3rd, it is respectively equipped with the downtake pipe 22, the blast pipe 24 of second exhaust pipe 23 and the 3rd
5th valve 25, the 6th valve 26 and the 7th valve 27, and downtake pipe 22, the blast pipe 24 of second exhaust pipe 23 and the 3rd divide
Vaporizer 28 is not connected to, and the vaporizer 28 is connected to the outlet side of air supply pipe 7.
The tail gas that crystal pulling furnace discharges in the utility model is used as unstripped gas after preliminary treatment, is dropped into heat exchanger 1
Enter low-temperature fractionating tower 8 after temperature liquefaction, high purity liquid state argon gas caused by the bottom of low-temperature fractionating tower 8 is extracted out, is stored up into cryogenic liquid
Tank, cryogenic liquid storage tank use 3, and the liquid outlet of cryogenic liquid storage tank is connected with heat exchanger 1, are utilized by heat exchanger 1 cold
Become the high-purity argon gas of normal temperature after amount, high-purity argon gas resupplies client's use.
The liquid high-purity argon gas that low-temperature fractionating tower 8 extracts, first passes around the first purity detector 10 and detects, after detection is qualified
The first cryogenic liquid storage tank 11 is entered back into, after the first cryogenic liquid storage tank 11 is filled, goes successively to the second cryogenic liquid storage tank
12.Now open the 5th valve 25, as qualified if first booster whether qualified by the detection gas of the second purity detector 20
17 pair of first cryogenic liquid storage tank 11 confess liquid argon therein from after being pressurized, by heat exchanger using being returned to after cold
Normal temperature supplies crystal pulling furnace;Likewise, after the second cryogenic liquid storage tank 12 is full of, whether qualified, when if detecting gas therein
When liquid in one cryogenic liquid storage tank 11 runs low, it is switched to the second cryogenic liquid storage tank 12 and starts to take liquid to supply by heat exchanger
Gas, at this moment, the liquid of rectifier bottoms initially enter the 3rd cryogenic liquid storage tank 13;And the second cryogenic liquid storage tank then will wherein
Elevated pressures gas emptying, in order to which the liquid in rectifying column can enter.In this way, three cryogenic liquid storage tanks are cut successively
Change.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
Within the spirit and principle of utility model, any modification, equivalent substitution and improvements made etc., the utility model should be included in
Protection domain within.
Claims (5)
1. a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas, it is characterised in that including heat exchanger
(1), low-temperature fractionating tower (8), the first cryogenic liquid storage tank (11), the second cryogenic liquid storage tank (12) and the 3rd cryogenic liquid storage tank
(13), through raw material tracheae (2), condensation tracheae (3), flue gas leading (4) and air supply pipe (7), the raw material in the heat exchanger (1)
Tracheae (2) is connected to the air inlet of low-temperature fractionating tower (8), and the gas outlet of the low-temperature fractionating tower (8) is connected to flue gas leading (4),
The liquid outlet connected drainage pipe (9) of the low-temperature fractionating tower (8), the discharging tube (9) are provided with the first purity detector (10),
Three tunnel parallel connections of discharging tube (9) end point set the first cryogenic liquid storage tank (11), the second cryogenic liquid storage tank (12) respectively
It is low with the 3rd cryogenic liquid storage tank (13), first cryogenic liquid storage tank (11), the second cryogenic liquid storage tank (12) and the 3rd
First valve (14), the second valve (15) and the 3rd valve (16) are set respectively on the inlet of geothermal liquid storage tank (13);It is described
The liquid outlet of first cryogenic liquid storage tank (11), the second cryogenic liquid storage tank (12) and the 3rd cryogenic liquid storage tank (13) connects respectively
The inlet end of air supply pipe (7) is connected to, the outlet side of the air supply pipe (7) sets gradually the second purity detector (20) and flowmeter
(21)。
2. a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas as claimed in claim 1, it is special
Sign is that the raw material tracheae (2) forms heat exchange structure with condensation tracheae (3), flue gas leading (4), air supply pipe (7).
3. a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas as claimed in claim 1, it is special
Sign is that the inlet end of the air supply pipe (7) is additionally provided with a loop branch pipe (5), and the loop branch pipe (5) is connected to cryogenic rectification
The inlet of tower (8), and loop branch pipe (5) is provided with the 4th valve (6).
4. a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas as claimed in claim 1, it is special
Sign is, in first cryogenic liquid storage tank (11), the second cryogenic liquid storage tank (12) and the 3rd cryogenic liquid storage tank (13)
First booster (17), the second booster (18) and the 3rd booster (19) are set respectively.
5. a kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas as claimed in claim 1, it is special
Sign is, in first cryogenic liquid storage tank (11), the second cryogenic liquid storage tank (12) and the 3rd cryogenic liquid storage tank (13)
Downtake pipe (22), second exhaust pipe (23) and the 3rd blast pipe (24), the downtake pipe (22), second are connected to respectively
The 5th valve (25), the 6th valve (26) and the 7th valve (27) are respectively equipped with blast pipe (23) and the 3rd blast pipe (24),
And downtake pipe (22), second exhaust pipe (23) and the 3rd blast pipe (24) are connected to vaporizer (28), the vapour respectively
Change the outlet side that device (28) is connected to air supply pipe (7).
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CN201721183202.XU CN207180156U (en) | 2017-09-13 | 2017-09-13 | A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas |
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CN201721183202.XU CN207180156U (en) | 2017-09-13 | 2017-09-13 | A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas |
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CN107525347A (en) * | 2017-09-13 | 2017-12-29 | 湖北和远气体股份有限公司 | A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas |
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Cited By (1)
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CN107525347A (en) * | 2017-09-13 | 2017-12-29 | 湖北和远气体股份有限公司 | A kind of device for ensureing monocrystalline silicon richness argon tail gas purification high-purity argon gas quality of filling gas |
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