CN207166360U - Voltage reduction module switchs and possessed the voltage reduction module and chip of voltage reduction module switch - Google Patents

Voltage reduction module switchs and possessed the voltage reduction module and chip of voltage reduction module switch Download PDF

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Publication number
CN207166360U
CN207166360U CN201721161821.9U CN201721161821U CN207166360U CN 207166360 U CN207166360 U CN 207166360U CN 201721161821 U CN201721161821 U CN 201721161821U CN 207166360 U CN207166360 U CN 207166360U
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Prior art keywords
reduction module
semiconductor element
voltage reduction
inverse parallel
switch
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CN201721161821.9U
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骆明星
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Hitachi anstamo Automotive Systems (Suzhou) Co.,Ltd.
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Hitachi Automotive Systems Suzhou Ltd
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Abstract

It the utility model is related to a kind of voltage reduction module switch and possess the voltage reduction module and chip of voltage reduction module switch, voltage reduction module switch includes：The 1st semiconductor element and the 1st diode of inverse parallel connection, it forms the 1st inverse parallel connector, and one end input of the 1st inverse parallel connector has supply voltage；The 2nd semiconductor element and the 2nd diode of inverse parallel connection, it forms the 2nd inverse parallel connector, and the other end and the 2nd semiconductor element of the 1st semiconductor element are connected in series；And it is connected in parallel with the 2nd inverse parallel connector, its one end is connected to the tie point of the 1st inverse parallel connector and the 2nd inverse parallel connector, 3rd semiconductor element of its other end ground connection, 1st semiconductor element and the 2nd semiconductor element are according to pwm control signal, alternating, complementary ground switched conductive state and cut-off state, so as to which supply voltage be depressured, the 3rd semiconductor element suppresses the 2nd semiconductor element and misleaded when frequency hopping occurs for pwm control signal.

Description

Voltage reduction module switchs and possessed the voltage reduction module and chip of voltage reduction module switch
Technical field
It the utility model is related to a kind of voltage reduction module switch and possess the voltage reduction module and chip of voltage reduction module switch.
Background technology
In existing ECU (Electronic Control Unit：Electronic control unit) etc. need power supply electricity in product Pressure is used further to drive after being depressured.Such as patent document 1, with reference to its Fig. 1, switch element 101 includes main switch MHSAnd from Switch MLS, logic control circuit 1022, which is based on the driving of pulse width modulating signal PWM and clock signal of system CLK generations first, to be believed Number DRH and the second drive signal DRL.First drive signal DRH and the second drive signal DRL substantially has complementary logic shape State, it is respectively used to drive main switch MHS and from switch MLS, so that main switch MHSWith from switch MLSComplementally turn on and close Disconnected switching, i.e., main switch MHSFrom switch M during conductingLSShut-off, main switch MHSFrom switch M during shut-offLSConducting, so as to be based on the master Switch MHSWith from switch MLSTurn-on and turn-off switching by input voltage vin decompression be output voltage Vo.
Patent document：
Patent document 1：CN104038040A
Utility model content
Utility model technical problem to be solved
Then, in existing decompression control loop, frequency hopping phenomenon occurs in PWM generator, it means that at one section Interior high-side switch and low side switch are all in cut-off state, if temperature is too high, electric current is larger, and now external inductors can produce Larger reverse induction electric current, so as to the internal NPN transistor in false triggering low side switch.When next high-side switch turns on Cause low side switch scaling loss.
For solving the technical scheme of technical problem
The utility model is accomplished in view of the above problems, its object is to, there is provided a kind of voltage reduction module switch and tool The voltage reduction module and chip of standby voltage reduction module switch.Voltage reduction module switch includes：1st semiconductor element and the 1st diode, 1st semiconductor element is connected with the 1st diode inverse parallel, so as to form the 1st inverse parallel connector, the 1st inverse parallel One end input of connector has supply voltage；2nd semiconductor element and the 2nd diode, the 2nd semiconductor element and the 2nd two Pole pipe inverse parallel is connected, and so as to form the 2nd inverse parallel connector, the other end of the 1st semiconductor element is led with the described 2nd half Volume elements part is connected in series；And the 3rd semiconductor element, the 3rd semiconductor element are in parallel with the 2nd inverse parallel connector even Connecing, its one end is connected to the tie point of the 1st inverse parallel connector and the 2nd inverse parallel connector, and its other end is grounded, 1st semiconductor element and the 2nd semiconductor element according to pwm control signal, alternating, complementary switched conductive state with Cut-off state, so as to which the supply voltage be depressured, the 3rd semiconductor element is jumped in the pwm control signal During frequency, suppress the 2nd semiconductor element and mislead.
Utility model effect
Involved by the utility model voltage reduction module switch and possess the voltage reduction module switch voltage reduction module and chip i.e. Make low side switch PWM generator occur frequency hopping phenomenon in the case of, also can normal work will not be burnt.
Brief description of the drawings
Fig. 1 is the figure for the composition for representing the voltage reduction module 1 involved by the utility model.
Fig. 2 is the equivalent structure figure for representing downside MOS transistor LS.
Fig. 3 is the timing diagram of PWM generator 3.
Embodiment
Below, the voltage reduction module of voltage reduction module switch is switched and possessed for the voltage reduction module involved by the utility model Preferred embodiment, illustrated using accompanying drawing, but for identical or suitable part in each figure, add identical label and enter Row explanation.
Embodiment
Fig. 1 is the figure for the composition for representing the voltage reduction module 1 involved by the utility model.As shown in figure 1, voltage reduction module 1 with External inductors L1, external capacitive C1, external capacitive C2 are connected to form loop, itself and in voltage reduction module 1 device annexation will Illustrate later.Thus, after being depressured to supply voltage VB, V is exported in point AA(VA<VB), for after (not shown) The driving of level circuit, or implement further decompression.
Voltage reduction module 1 includes：Voltage reduction module switch 2, PWM generator 3, control unit 4, power supply 5.Wherein, power supply 5 is to drop Die block switch 2 output supply voltage VB, PWM generator 3 produce for control voltage reduction module switch 2 square wave pwm signal simultaneously Export to control unit 4, control unit 4 receives the square wave pwm signal from PWM generator, to the output PWM controls of voltage reduction module switch 2 Signal processed is to be controlled so that voltage reduction module switchs 2 and external inductance L1 and supply voltage VB is depressured.
Voltage reduction module switch 2 is by high side MOS transistor HS, downside MOS transistor LS, parasitic high side diode D2, parasitism Low side diodes D1 and Schottky diode D4 is formed.High side MOS transistor HS connects with parasitic high side diode D2 inverse parallels Connect to form high side inverse parallel connector, downside MOS transistor LS is connected low to form with parasitic low side diodes D1 inverse parallels Side inverse parallel connector, also, high side inverse parallel connector is connected in series in point B, Schottky two with downside inverse parallel connector Pole pipe D4 is connected in parallel with downside MOS transistor LS, and one end ground connection of its side opposite with point B sides.Via point B also Be connected with external inductors L1 one end, the external inductors L1 other end point A and external capacitive C1 and external capacitive C2's and One end of connection connector is connected, external capacitive C1 and external capacitive the C2 other end for being connected in parallel body ground connection.The voltage reduction module Switch 2 by high side MOS transistor HS and downside MOS transistor LS alternating, complementaries switched conductive state and cut-off state so as to Realize decompression.
Specifically, in the case where voltage reduction module switchs 2 normal works, high side MOS transistor HS conductings, downside MOS Transistor LS ends, and supply voltage VB passes through high side MOS transistor HS and inductance L1 and electric capacity C1, C2, at point A, power supply Voltage VB is depressurized as VA.Afterwards, it is changed into ending in high side MOS transistor HS, and downside MOS transistor LS is changed into turning on When, inductance L1 forward current and reverse induction electric current is by downside MOS transistor LS, so as to realize backflow functionality.
The situation for frequency hopping phenomenon occur is illustrated below, before this, to downside MOS transistor LS internal structure Illustrate.As shown in Fig. 2 Fig. 2 shows downside MOS transistor LS equivalent structure figure.Downside MOS transistor LS is equivalent to The parasitic big resistance R of connection one between the base stage and emitter stage of one NPN triode (hereinafter referred to as body NPN triode)LS, and its Reversal connection diode D1 is connected between the base stage of NPN triode and colelctor electrode.
Reference picture 3 illustrates to caused frequency hopping phenomenon in the PWM generator 3 of voltage reduction module 1, and Fig. 3 is PWM generator 3 timing diagram.Frequency hopping phenomenon be changed into ending in high side MOS transistor HS, and downside MOS transistor LS be unchanged as conducting and Keep the phenomenon of cut-off.Fig. 3 shows square wave pwm signal HS PWM, LS PWM and clock signal as caused by PWM generator 3 Relation between CLK.In Fig. 3, transverse axis is the time, and the longitudinal axis is that PWM generator 3 is inputted to high side MOS transistor HS square wave PWM Signal HS PWM, input to downside MOS transistor LS square wave pwm signal LS PWM and clock signal clk with the time electricity It is flat.
, height when normal, high side MOS transistor HS and downside MOS transistor LS alternately switch in a cycle T, i.e., While side MOS transistor HS is turned on, downside MOS transistor LS cut-offs (during being, for example, t1), and high side MOS transistor afterwards HS is changed into ending, and downside MOS transistor LS switches to conducting (during being, for example, t2), and arrives next cycle, similarly, high side MOS transistor HS switches to conducting, and downside MOS transistor LS switches to cut-off.
On the other hand, under certain conditions, such as during t2, conducting should be switched to (in figure shown in dotted line square wave) Downside MOS transistor LS is not turned on and is kept cut-off state, i.e., produces frequency hopping phenomenon.
Thus, in the case where there is frequency hopping phenomenon, forward current I has just been started and has been realized back by parasitic low side diodes D1 Road function.But because body NPN triode is ended, reverse current I ' can only be reverse flowed to parasitic low side diodes D1.Work as leakage When electric current is bigger, due to big resistance RLSPresence and the base stage in body NPN triode forms certain potential, when base stage-hair When pressure difference between emitter-base bandgap grading exceedes on state threshold voltage, meeting false triggering body NPN triode conducting, in next cycle, high side MOS transistor HS switches to conducting again when, now high side MOS transistor HS and downside MOS transistor LS is simultaneously turned on so that electricity The direct scaling loss downside MOS transistor LS of source voltage VB.
However, in voltage reduction module switch 2 of the present utility model, in one Xiao Te of downside MOS transistor LS both ends parallel connection Based diode D4.In the state of downside MOS transistor LS body NPN triode does not turn on, Schottky diode D4 is utilized Leakage current big " shortcoming " so that most of reverse current I ' flows through Schottky diode D4, produces discharge current, so that The pressure drop obtained between base-emitter reduces, and thereby guarantees that when high side MOS transistor HS is turned on, downside MOS transistor LS It will not mislead, avoid that high side MOS transistor HS occurs and downside MOS transistor LS is simultaneously turned on and scaling loss downside MOS crystal The problem of pipe LS.So as to, even if there is frequency hopping phenomenon, loop also can normal work, downside MOS transistor LS will not mislead, Without scaling loss downside MOS transistor LS.
In addition, inventor of the present utility model is studied the condition for producing frequency hopping phenomenon, three kinds of jumps are enumerated below Frequency phenomenon Production conditions：
(1) voltage reduction module is restarted after Thermal shutdown and switchs 2 (test conditions：Supply voltage VB=16V, work temperature a =105 DEG C, Tj=125 DEG C of tie point temperature, load current I=2.2A)；
(2) continuous repeated priming, closing power supply (test condition：Supply voltage VB=16V, a=105 DEG C of work temperature, Tj=125 DEG C of tie point temperature)；
(3) dutycycle >=80% for the pulse that PWM generator 3 exports.
With reference to above-mentioned frequency hopping phenomenon Production conditions, inventor of the present utility model has carried out emulation experiment, respectively to not adding Pressure difference VF1 when adding the Schottky diode D4 frequency hopping does not occur yet between the base-emitter of body NPN triode, it is not added with Schottky diode D4 and occur pressure difference VF2 during frequency hopping between the base-emitter of body NPN triode and addition Xiao Pressure difference VF3 when frequency hopping occurring after special based diode D4 between the base-emitter of body NPN triode is measured.
Emulate example 1：It is not added with Schottky and does not occur frequency hopping phenomenon
Test condition：1. 105 DEG C 2. continuous repeated priming, close power supply (i.e., above-mentioned frequency hopping phenomenon Production conditions (2)) 3. Supply voltage VB=16V
Measure result：Under normal running conditions, the pressure difference VF1 between the base-emitter of body NPN triode is 0.65V, the body NPN triode do not mislead.
Emulate example 2：It is not added with Schottky diode and frequency hopping phenomenon occurs
Test condition：1. 105 DEG C 2. continuous repeated priming, close power supply (i.e., above-mentioned frequency hopping phenomenon Production conditions (2)) 3. Supply voltage VB=16V
Measure result:Pressure difference VF2 between the base-emitter of body NPN triode is 0.9V, the poles of body NPN tri- Pipe misleads and scaling loss.
Emulate example 3：Add Schottky diode and frequency hopping phenomenon occur
Test condition：1. 105 DEG C 2. continuous repeated priming, close power supply (i.e., above-mentioned frequency hopping phenomenon Production conditions (2)) 3. Supply voltage VB=16V
Measure result:Pressure difference VF3 between the base-emitter of body NPN triode is 0.65V, body NPN tri- Pole pipe does not mislead, i.e., over-heated fault and does not occur.
Thus, it is possible to clearly：In the case where increasing Schottky diode, body NPN triode can be effectively reduced Pressure difference between base-emitter, so as to suppress downside MOS transistor LS over-heated faults because of caused by frequency hopping.
In the utility model, high-side transistor low side transistors are by taking MOS transistor as an example, but as long as can be led by switching Logical, cut-off carrys out solid line decompression, can also use other switch elements, such as FET, triode etc..
In addition, in the utility model, by taking Schottky diode as an example, but as long as being when frequency hopping occurs, suppress downside MOS Transistor LS's misleads, and consumes the device of most of reverse recovery current, can also use larger its of leakage current Its device.Such as the larger transient diode of new leakage electric current, Zener diode etc..
The present invention is not limited to above-mentioned embodiment, can implement various changes in the range of its purport is not departed from.
Industrial application
The utility model is applicable to need voltage reduction module to perform in the various electronic equipments of decompression, chip.Wherein, originally Schottky diode D4 in specification can be directly integrated in voltage reduction module or chip, can also be connected on existing decompression mould outside The outside of block or chip.
Label declaration
1 voltage reduction module
2 voltage reduction modules switch
3 PWM generators
4 control units
5 power supplys
HS high side MOS transistors
LS downside MOS transistors
D1, D2 parasitic diode
D4 Schottky diodes
C1, C2 capacitor
L1 inductors

Claims (10)

  1. A kind of 1. voltage reduction module switch, it is characterised in that including：
    1st semiconductor element and the 1st diode, the 1st semiconductor element are connected with the 1st diode inverse parallel, so as to form 1st inverse parallel connector, one end input of the 1st inverse parallel connector have supply voltage；
    2nd semiconductor element and the 2nd diode, the 2nd semiconductor element are connected with the 2nd diode inverse parallel, so as to form 2nd inverse parallel connector, the other end and the 2nd semiconductor element of the 1st semiconductor element are connected in series；And
    3rd semiconductor element, the 3rd semiconductor element are connected in parallel with the 2nd inverse parallel connector, and its one end is connected to institute The tie point of the 1st inverse parallel connector and the 2nd inverse parallel connector is stated, its other end ground connection,
    1st semiconductor element and the 2nd semiconductor element are according to pwm control signal, alternating, complementary ground switched conductive shape State and cut-off state, so as to which the supply voltage be depressured,
    3rd semiconductor element suppresses the 2nd semiconductor element and misleaded when frequency hopping occurs for the pwm control signal.
  2. 2. voltage reduction module switch as claimed in claim 1, it is characterised in that
    At least one in 1st semiconductor element and the 2nd semiconductor element is MOS transistor.
  3. 3. voltage reduction module switch as claimed in claim 1 or 2, it is characterised in that
    3rd semiconductor element is Schottky diode.
  4. 4. voltage reduction module switch as claimed in claim 1 or 2, it is characterised in that
    The dutycycle of the pwm control signal is more than 80%.
  5. 5. voltage reduction module switch as claimed in claim 3, it is characterised in that
    The dutycycle of the pwm control signal is more than 80%.
  6. A kind of 6. voltage reduction module, it is characterised in that including：
    Voltage reduction module switch as any one of claim 1 to 5.
  7. 7. voltage reduction module as claimed in claim 6, it is characterised in that also include：
    Power supply；The power supply switchs output supply voltage to the voltage reduction module；
    PWM generator, the PWM generator produce the pwm signal for controlling the voltage reduction module switch；And
    Control unit, the control unit receive the pwm signal from the PWM generator, and output PWM controls are switched to the voltage reduction module Signal processed is to be controlled so that the voltage reduction module switch is depressured to the supply voltage.
  8. 8. voltage reduction module as claimed in claims 6 or 7, it is characterised in that
    3rd semiconductor element is formed at the outside of the voltage reduction module.
  9. A kind of 9. chip, it is characterised in that
    Possesses voltage reduction module as claimed in claim 7 or 8.
  10. 10. chip as claimed in claim 9, it is characterised in that
    3rd semiconductor element is formed at the outside of the chip.
CN201721161821.9U 2017-09-11 2017-09-11 Voltage reduction module switchs and possessed the voltage reduction module and chip of voltage reduction module switch Active CN207166360U (en)

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Application Number Priority Date Filing Date Title
CN201721161821.9U CN207166360U (en) 2017-09-11 2017-09-11 Voltage reduction module switchs and possessed the voltage reduction module and chip of voltage reduction module switch

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CN207166360U true CN207166360U (en) 2018-03-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114915162A (en) * 2022-06-30 2022-08-16 苏州浪潮智能科技有限公司 Step-down converter control device and method, power architecture and server

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114915162A (en) * 2022-06-30 2022-08-16 苏州浪潮智能科技有限公司 Step-down converter control device and method, power architecture and server
CN114915162B (en) * 2022-06-30 2023-11-07 苏州浪潮智能科技有限公司 Step-down converter control device and method, power architecture and server

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Address after: 215126 No.255 Xinglong Street, Suzhou Industrial Park, Jiangsu Province

Patentee after: Hitachi anstamo Automotive Systems (Suzhou) Co.,Ltd.

Address before: 215126 No.255 Xinglong Street, Suzhou Industrial Park, Jiangsu Province

Patentee before: HITACHI AUTOMOTIVE SYSTEMS (SUZHOU) Co.,Ltd.