CN207134382U

CN207134382U - Light-emitting device, back light unit and liquid crystal display

Info

Publication number: CN207134382U
Application number: CN201720788209.8U
Authority: CN
Inventors: 刘俊宏; 廖世安; 刘建良
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2017-06-29
Filing date: 2017-06-29
Publication date: 2018-03-23
Anticipated expiration: 2027-06-29
Also published as: CN208127240U

Abstract

The utility model discloses a kind of light-emitting device, comprising：One ray structure, there is an electrode, light penetrating object, a reflecting layer and a metal coupling.Light penetrating object covers ray structure and has one first side surface and one second side surface.Reflecting layer covers the first side surface and does not cover the second side surface.Metal coupling is formed directly on electrode.

Description

Light-emitting device, back light unit and liquid crystal display

Technical field

A kind of light-emitting device is the utility model is related to, more particularly, to a kind of light-emitting device, it is formed comprising a reflecting layer In two sides of a light penetrating object.

Background technology

Light emitting diode (Light-Emitting Diode；LED) there is consume energy low, long lifespan, small volume, reaction speed The characteristics such as fast and optics output stabilization.In recent years, light emitting diode is gradually applied to the backlight in liquid crystal display.

Utility model content

For above and other objects, features and advantages of the present utility model can be become apparent, special embodiment below, And coordinate appended accompanying drawing, it is described as follows.

The purpose of this utility model is to provide a kind of light-emitting device, back light unit and liquid crystal display, existing to solve The problem of technology is present.

For the above-mentioned purpose, the utility model discloses a kind of light-emitting device, comprising：One ray structure, with an electrode, thoroughly Body of light, a reflecting layer and a metal coupling.Light penetrating object covers ray structure and with one first side table substantially perpendicular to one another Face and one second side surface.Reflecting layer covers the first side surface and does not cover the second side surface.Metal coupling is formed directly into electrode On.

The light penetrating object has a lower surface, is covered by the reflecting layer.

The light penetrating object also includes one the 3rd side surface and one the 4th side surface, and the reflecting layer covers the 3rd side surface and not Cover the 4th side surface.

First side surface and the 3rd side surface are relative to each other；Second side surface and the 4th side surface phase each other It is right.

The metal coupling has a side wall, is covered by the reflecting layer.

The ray structure has an insulating barrier, and there is the insulating barrier part to be covered by the metal coupling.

The reflecting layer covers the insulating barrier.

The reflecting layer has an inclined inner surface.

The light penetrating object has a upper surface, and the inner surface accompanies one 60~80 degree of angle with the upper surface.

Wavelength convert particle of the light-emitting device also comprising more wavelength convert particles or a variety of species.

There is a lower surface and a scratch to be formed at the lower surface in the reflecting layer.

The ray structure includes patterned substrate and the light emitting host of at least two is collectively forming on the patterned substrate.

The light-emitting device only includes three exiting surfaces.

This also provides a kind of back light unit with new, comprising：Light guide plate；Diffuser plate, it is arranged on the light guide plate；And hair Light source, the side of the light guide plate is arranged on, and comprising a support plate and above-mentioned light-emitting device, be arranged on the support plate；

The utility model also provides a kind of side casting type liquid crystal display, and it includes above-mentioned back light unit.

The utility model has the advantage of, the luminous device structure is reasonable, is easy to make, so as to reduce cost of manufacture, and And the light-emitting device so as to further improve luminous mass and efficiency, and is widely used by the design in reflecting layer.

Brief description of the drawings

Figure 1A is the upper schematic diagram of a light-emitting device in the embodiment of the utility model one；

Figure 1B is diagrammatic cross-sections of the Figure 1A along X-X line segments；

Fig. 1 C are diagrammatic cross-sections of the Figure 1A along Y-Y line segments；

Fig. 1 D are the enlarged drawing at A in Figure 1B；

Fig. 1 E are the enlarged drawing at B in Fig. 1 C；

Fig. 1 F are that the lower of a light-emitting device regards schematic diagram in the embodiment of the utility model one；

Fig. 2A~Fig. 2 H are the fabrication processing schematic perspective view of a light-emitting device in the embodiment of the utility model one；

Fig. 3 A~Fig. 3 H are respectively diagrammatic cross-sections of Fig. 2A~Fig. 2 H along II-II line segments；

Fig. 4 A are diagrammatic cross-sections of Fig. 2 E along III-III line segments；

Fig. 4 B are diagrammatic cross-sections of Fig. 2 G along III-III line segments；

Fig. 5 A are the upper schematic diagram of a light-emitting device in the embodiment of the utility model one；

Fig. 5 B are diagrammatic cross-sections of Fig. 5 A along X-X line segments；

Fig. 6 A are the diagrammatic cross-section of the back light unit of a side casting type liquid crystal display；

Fig. 6 B are the schematic perspective view of light emitting source and light guide plate.

Symbol description

100th, 200 light-emitting device

11st, 11 ' ray structure

110th, 110 ' patterned substrate

1101 upper surfaces

1102 lower surfaces

1103 first side surfaces

1104 second side surfaces

1105 the 3rd side surfaces

1106 the 4th side surfaces

1110 holes

111A, 111B light emitting host

1111 first type semiconductor layers

1112 active layers

1113 second type semiconductor layers

1114 first insulating barriers

1115 second insulating barriers

1116th, 106A, 106B conductive layer

1117 the 3rd insulating barriers

1118 first electrodes

1119 second electrodes

1120 ohmic contact layers

1121 mirror layer

1161 first areas

1162 second areas

1163 the 3rd regions

112 grooves

1181 sides

1124 upper surfaces

12 light penetrating objects

121 upper surfaces

122 lower surfaces

123 first side surfaces

124 second side surfaces

125 the 3rd side surfaces

126 the 4th side surfaces

13 wavelength conversion bodies

131 wavelength convert particles

15A, 15B metal coupling

15A2,15B2 side wall

151 scratches

17 reflecting layer

170 sidepieces

171 bottoms

1711 Part I

1712 Part II

1713 Part III

175 outer surfaces

176 inner surfaces

1714th, 15A1,15B1 lower surface

191st, 194 temporary transient adhesive tape

195 box dams

231 grooves

901 light emitting sources

9011 support plates

902 light guide plates

903 diffuser plates

904 reflectors

Embodiment

Following examples will be similar or identical in accompanying drawing or explanation along with brief description of the drawings concept of the present utility model Part use identical label, and in the accompanying drawings, shape, thickness or the height of element can be expanded or shunk.This practicality is new Each embodiment cited by type is not used to limit the scope of the utility model only to illustrate the utility model.To this practicality New made any modification apparent easy to know or change are without departure from spirit and scope of the present utility model.

Figure 1A shows the upper schematic diagram of a light-emitting device 100 in the embodiment of the utility model one, to clearly show that, Figure 1A Only display part layering and each layer all with depicted as solid lines (however, conductive layer 1116 is represented by dotted lines, illustrate to be described in detail as afterwards) without It is nontransparent, transparent or semitransparent by its material.Figure 1B shows sectional views of the Figure 1A along X-X line segments.Fig. 1 C show Figure 1A edges The sectional view of Y-Y line segments.Fig. 1 D show the enlarged drawing at Figure 1B A.Fig. 1 E are the enlarged drawing at Fig. 1 C B.Fig. 1 F are shown The lower of light-emitting device 100 regards schematic diagram.Represented to be simple, Figure 1B and Fig. 1 C ray structure 11 or light emitting host 111A is only with side Shape represents that detailed construction is described in Fig. 1 D and Fig. 1 E.

Reference picture 1A, Figure 1B and Fig. 1 D, light-emitting device 100 include a ray structure 11, a light penetrating object 12, a wavelength and turned Change body 13, a reflecting layer 17 and metal coupling (metal bump) 15A, 15B.Ray structure 11 includes a patterned substrate 110 And two light emitting host 111A, 111B.Patterned substrate (patterned substrate) 110 is essentially a cuboid, bag Containing a upper surface 1101, relative to upper surface 1101 lower surface 1102 and be connected to upper surface 1101 and lower surface 1102 it Between four side surfaces (the first side surface 1103, the second side surface 1104, the 3rd side surface 1105 and the 4th side surface 1106). Lower surface 1102 is a patterned surface, and it has the concaveconvex structure of rule or irregular alignment.Light penetrating object 12 covers upper surface 1101st, four side surfaces 1103~1106 and partial lower surface 1102.

Reference picture 1D, in the present embodiment, ray structure 11 include patterned substrate 110, two light emitting host 111A, 111B Be collectively forming on patterned substrate 110, a groove 112 is formed between two light emitting host 111A, 111B so that two light emitting hosts 111A, 111B are physically separated each other.Each light emitting host 111A, 111B include the activity of one first type semiconductor layer 1111, one The type semiconductor layer 1113 of layer 1112 and one second.One first insulating barrier 1114 is formed in groove 112 and covers light emitting host 111A, 111B the first type semiconductor layer 1111 are to avoid circuit paths unnecessary between adjacent light emitting host 111A, 111B (short Road).One mirror layer 1121 is formed in the second type semiconductor layer 1113.One second insulating barrier 1115 is formed at the first insulating barrier 1114 And in mirror layer 1121 and expose the mirror layer 1121 of part and light emitting host 111B the second type semiconductor layer of part 1113.One Conductive layer 1116 is formed at the second insulating barrier 1115.In addition, the second insulating barrier 1115 can cover the side wall of the first insulating barrier 1114. The side wall of the second insulating barrier of covering part 1115 of conductive layer 1116 simultaneously extends to light emitting host 111B mirror layer 1121.One the 3rd is exhausted Edge layer 1117 is formed on conductive layer 1116 and covers light emitting host 111A, 111B, and the conductive layer 1116 of exposed portion.One One electrode 1118 and a second electrode 1119 are respectively formed on light emitting host 111A and light emitting host 111B.Light emitting host Electrical connection between 111A, 111B will be in rear description.One ohmic contact layer 1120 may be selectively formed at the second type semiconductor layer Between 1113 and mirror layer 1121, to reduce the driving voltage of light-emitting device 100.

To clearly show that, Figure 1A conductive layer 1116 is represented by dotted lines.Reference picture 1A, Fig. 1 D and Fig. 1 E, conductive layer 1116 With a first area 1161, a second area 1162 (Figure 1A oblique line block) and one the 3rd region 1163.First area 1161 are only formed at light emitting host 111A and are physically separated with second area 1162.Second area 1162 is around first area 1161.Second area 1162 is in contact with light emitting host 111A the first type semiconductor layer 1111, and is further formed at groove The second insulating barrier 1115 in 112 and light emitting host 111B the second type semiconductor layer 1113 is extended to, thus conductive layer 1116 Being connected in series light emitting host 111A, (due to the position of hatching, this annexation is not shown in Fig. 1 D with light emitting host 111B In).

Reference picture 1A, Fig. 1 D and Fig. 1 E, multiple holes 1110 are formed in the 3rd insulating barrier 1117, and the only shape of hole 1110 It is not formed at light emitting host 111B at light emitting host 111A.First electrode 1118 may extend to hole 1110 and with hair The first area 1161 of conductive layer 1116 forms electrical connection, thus, first electrode 1118 and light emitting host on light main body 111A 111A the second type semiconductor layer 1113 forms electrical connection.3rd region 1163 of conductive layer 1116 is only formed at light emitting host 111B.3rd region 1163 of conductive layer 1116 of the second electrode 1119 directly with being exposed from the 3rd insulating barrier 1117 connects Touch.3rd region 1163 of conductive layer 1116 is in contact with light emitting host 111B the first type semiconductor layer 1111.In this implementation In, for example, when first electrode 1118 electrically connects with the positive pole of outer electrode, and second electrode 1119 and outer electrode is negative When pole electrically connects, electric current sequentially flows through first electrode 1118 in hole 1110, the first area 1161, luminous of conductive layer 1116 Main body 111A the second type semiconductor layer 1113, light emitting host 111A active layer 1112, light emitting host 111A the first type half Conductor layer 1111, the second area 1162 of conductive layer 1116, light emitting host 111B the second type semiconductor layer 1113, light emitting host 111B active layer 1112, light emitting host 111B the first type semiconductor layer 1111, the 3rd region 1163 of conductive layer 1116, most Afterwards to second electrode 1119, therefore, light emitting host 111A is serially connected with light emitting host 111B and cuts and light.It is in addition, comprehensive Above global design is closed, can reduce that hole 1110 is formed at light emitting host 111B manufacture craft program and conductive layer 1116 covers Light emitting host 111A, 111B side wall can increase the luminous intensity (lumen) of light-emitting device 100 and reduce the entirety of light-emitting device 100 Forward bias voltage drop (Vf).

In the present embodiment, first electrode 1118, second electrode 1119, the material of conductive layer 1116 can be metals, example As golden (Au), silver-colored (Ag), copper (Cu), chromium (Cr), aluminium (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn) or its alloy or its Stack combinations.Mirror layer 1121 can the light that is sent of Refl-Luminous main body, and silver-colored (Ag), aluminium (Al) or Bragg reflection can be included Mirror (Distributed Bragg Reflector).First insulating barrier 1114 can be single or multiple lift.When the first insulating barrier 1114 For individual layer when, material can include oxide, nitride or polymer (polymer)；Oxide can include aluminum oxide (Al₂O₃)、 Silica (SiO₂), titanium dioxide (TiO₂), tantalum pentoxide (Tantalum Pentoxide, Ta₂O₅) or aluminum oxide (AlO_x)； Nitride can include aluminium nitride (AlN), silicon nitride (SiN_x)；Polymer can include polyimides (polyimide) or benzo ring Butane (benzocyclobutane, BCB).When the first insulating barrier 1114 is multilayer, material can include aluminum oxide (Al₂O₃), oxygen SiClx (SiO₂), titanium dioxide (TiO₂), niobium pentaoxide (Nb₂O₅) and silicon nitride (SiN_x) lamination it is anti-to form a Prague Penetrate mirror (Distributed Bragg Reflector).The selection of second insulating barrier 1115 and the material of the 3rd insulating barrier 1117 can With reference to the first insulating barrier 1114.

Reference picture 1A, Figure 1B and Fig. 1 C, light penetrating object 12 coat ray structure 11 and are essentially a cuboid, therefore in figure In 1A, light penetrating object 12 is a rectangle.Light penetrating object 12 include a upper surface 121, relative to upper surface 121 lower surface 122 and Four side surfaces (the first side surface 123, the second side surface 124, the 3rd side being connected between upper surface 121 and lower surface 122 The side surface 126 of surface 125 and the 4th).In figure ia, the first side surface 123 and the 3rd side surface 125 are substantially parallel to each other simultaneously Relatively, and it is the long side of cuboid.Second side surface 124 and the 4th side surface 126 are parallel to each other and relative, and are cuboid Short side.The second side surface of substantial orthogonality 124 of first side surface 123.Reflecting layer 17 has a sidepiece 170 and a bottom 171.Side Portion 170 covers the first side surface 123, the 3rd side surface 125, but does not cover the second side surface 124 and the 4th side surface 126.Bottom Portion 171 covers lower surface 122.Upper surface 121 is not covered by reflecting layer 17.Similarly, reflecting layer 17 covers ray structure 11 the first side surface 1103 and the 3rd side surface 1105, and the second side surface 1104 and the 4th side of ray structure 11 are not covered Surface 1106.

Reference picture 1C, sidepiece 170 have an outer surface 175 and an inner surface 176, and outer surface 175 is essentially a plane (being straight line in Fig. 1 C) and vertical upper surface 121.Inner surface 176 has an inclined-plane (being oblique line in Fig. 1 C) and relative to upper surface 121 tilt.Inner surface 176 accompanies one 60~80 degree of angle (θ) with upper surface 121.In detail, inner surface 176 and outer surface The distance between 175 (D1) become larger from the direction of upper surface 121 to the lower surface 122 of light penetrating object 12.Inner surface 176 reflects The light that ray structure 11 is sent is with towards the upper surface 121 of light penetrating object 12.In other words, the institute of 17 Refl-Luminous structure of reflecting layer 11 The light sent towards the upper surface 121 of light penetrating object 12 and/or side surface 124,126 to leave light-emitting device 100.

Further, reflecting layer 17 is a mixture, and it includes a matrix, and multiple reflective particles are doped in matrix, It is diffusing reflection (diffuse that in reflecting layer 17 reflection and its reflection kenel, which can occur, for the light that therefore ray structure 11 is sent reflection).Matrix is an insulating materials and includes silica matrix (silicone-based) or epoxy substrate (epoxy- based)；Reflective particle can include titanium dioxide, silica, barium sulfate or aluminum oxide.Because reflecting layer 17 is for different ripples Long reflectivity has correlation with its thickness, and therefore, the thickness in reflecting layer 17 is (i.e. between inner surface 176 and outer surface 175 most Big distance) between 50 μm~160 μm.It is anti-for 430~450nm light for crest value when the thickness in reflecting layer 17 is less than 50 μm The rate of penetrating can be less than 90%；It can be less than 88% for crest value for the reflectivity of 540~570nm light；And it is 620 for crest value The reflectivity of~670nm light can be less than 80%.It is 430~450nm for crest value when the thickness in reflecting layer 17 is about 160 μm The reflectivity of light, 540~570nm light and 620~670nm light can all be more than 95%.However, when the thickness in reflecting layer 17 is more than 160 μm, light-emitting device 100 can be increased in the thickness and cost of manufacture of Y-direction, may limit its application (such as：Hand Machine, liquid crystal display, wearable device (wrist-watch, bracelet, necklace etc.)).In another embodiment, according to different applications, reflection The thickness of layer 17 is also greater than 160 μm, or, between 50 μm~1000 μm.

Reference picture 1B, Fig. 1 D and Fig. 1 F, the bottom 171 in reflecting layer 17 are formed at the lower surface 122 of light penetrating object 12 and had One Part I 1711, a Part II 1712 and a Part III 1713.By Fig. 1 D sectional view, Part I 1711, one The Part III 1713 of Part II 1712 and one is separated from each other, and Part I 1711 covers metal coupling 15A；Part II 1712 covering metal coupling 15A, 15B；Part III 1713 covers metal coupling 15B.From Fig. 1 F, Part I 1711, One Part II 1712 and a Part III 1713 are connected to each other.

Metal coupling 15A, 15B are in contact with first electrode 1118 and second electrode 1119 and form electrical connection respectively.Gold Category projection 15A, 15B each have substantially planar lower surface 15A1, a 15B1.In addition, bottom 171 is also substantial with one Flat lower surface 1714." substantially planar " is defined as when light-emitting device 100 by electronic type microscope in 60~100 times Enlargement ratio is lower when analyzing, and lower surface 15A1,15B1,1714 are flat.However, when light-emitting device 100 passes through electronic type Microscope in the enlargement ratio more than 400 times is lower analyze when, or pass through surface profile rugosity instrument (alphastep film Thickness measuring instrument) or AFM (atomic force microscope；AFM) When measured, lower surface 15A1,15B1,1714 are a rough surface, and roughness (Ra) is 2~3 μm/mm²。

In Fig. 1 D, directly the 3rd insulating barrier 1117 of contact of Part II 1712 in reflecting layer 17 is simultaneously filled up completely with first Between electrode 1118 and second electrode 1119, and there is not light penetrating object 12 to be formed at the Part II 1712 in reflecting layer 17 and the 3rd exhausted Between edge layer 1117.In another embodiment, during manufacture craft, light penetrating object 12 can be formed at second of reflecting layer 17 Points 1712 and the 3rd between insulating barrier 1117.

Metal coupling (15A, 15B) is a Pb-free solder, its include it is at least one be selected from by tin, copper, silver, bismuth, indium, zinc and Antimony forms the material in group.Metal coupling 15A, 15B height (H1) are between 20~150 μm.In one embodiment, Metal coupling is formed by reflow manufacture craft (reflow soldering).In detail, scolding tin glue is positioned on electrode, so After being heated in a reflow oven to melt scolding tin glue and produce engagement (joint), metal coupling 15A, 15B are consequently formed. Scolding tin glue and tin-silver-copper, tin-antimony or Jin-tin can be included and be more than 215 DEG C or more than 220 DEG C with a fusing point, or between Between 215~240 DEG C (such as 217 DEG C, 220 DEG C, 234 DEG C).In addition, peak temperature (the peak value temperature in reflow manufacture craft Degree typically occurs in reflow area (reflow zone) stage) it is more than 250 DEG C or more than 260 DEG C, or between 250~270 DEG C Between (such as 255 DEG C, 265 DEG C).

With reference to figure 1F, metal coupling 15A, 15B have multiple scratches 151 being formed on surface.Scratch 151 can pass through light Observed by microscope.Scratch 151 also may extend to nonmetallic projection 15A, 15B region, such as the following table in reflecting layer 17 Face 1714.In detail, scratch 151 is substantially a straight line and continuously extends in the lower surface 1714 in reflecting layer 17, metal coupling On 15A, 15B lower surface 15A1,15B1.Correlative detail is described in detail as after.

Reference picture 1B and Fig. 1 C, wavelength conversion body 13 are formed in light penetrating object 12.In the present embodiment, wavelength conversion body 13 It is scattered in comprising multiple wavelength convert particles 131 in a matrix.The upper table of the overlay pattern substrate 110 of wavelength convert particle 131 Face 1101, the first side surface 1103, the second side surface 1104, the 3rd side surface 1105 of part and the 4th partial side surface 1106.The side surface 1105 of part the 3rd and the side surface 1106 of part the 4th are not wavelength-converted particle 131 and covered.Selectivity Ground, wavelength conversion body 13 and/or light penetrating object 12 can also include spread powder.Matrix includes epoxy resin (Epoxy), silica gel (Silicone), pi (PI), excessively benzocyclobutene (BCB), fluorine cyclobutane (PFCB), Su8, acrylic resin (Acrylic Resin), polymethyl methacrylate (PMMA), PET (PET), makrolon (PC), Or PEI (Polyetherimide).Light penetrating object 12 can include epoxy resin (Epoxy), silica gel (Silicone), gather Sub- acid amides (PI), benzocyclobutene (BCB), cross fluorine cyclobutane (PFCB), be Su8, acrylic resin (Acrylic Resin), poly- Methyl methacrylate (PMMA), PET (PET), makrolon (PC) or PEI (Polyetherimide).When the matrix of wavelength conversion body 13 is identical with the material of light penetrating object 12, interface therebetween is in electronics Fuzzy unobvious under microscope irradiation, or, between not seeing the matrix and light penetrating object 12 for thering is interface to be present in wavelength conversion body 13, Imply that wavelength convert particle 131 is scattered in light penetrating object 12.

Wavelength convert particle 131 is with 5 μm~100 μm of particle size and can include one or more kinds of (a variety of) kinds The inorganic fluorescent material (phosphor) of class, organic molecule fluorchrome (organic fluorescent colorant), half The combination of conductor material (semiconductor) or above-mentioned material.Inorganic fluorescent material material is glimmering including but not limited to yellow green Light powder or red fluorescence powder.The composition of yellowish green fluorescent powder be for example aluminum oxide (YAG or TAG), silicate, vanadate, Alkaline-earth metal selenides or metal nitride.The composition of red fluorescence powder is such as fluoride (K₂TiF₆:Mn⁴⁺、K₂SiF₆:Mn⁴ ⁺), silicate, vanadate, alkaline earth sulfide (CaS), metal oxynitride or tungsten hydrochlorate race mixture.Wavelength convert Concentration expressed in percentage by weight (w/w) of the particle in matrix is between 50~70%.Semi-conducting material includes nm-sized crystalline body (nano Crystal semi-conducting material), such as quantum dot (quantum-dot) luminescent material.Quantum dot light emitting material can be selected from by Zinc sulphide (ZnS), zinc selenide (ZnSe), zinc telluridse (ZnTe), zinc oxide (ZnO), cadmium sulfide (CdS), cadmium selenide (CdSe), tellurium Cadmium (CdTe), gallium nitride (GaN), gallium phosphide (GaP), gallium selenide (GaSe), gallium antimonide (GaSb), GaAs (GaAs), nitrogen Change aluminium (AlN), aluminum phosphate (AlP), aluminium arsenide (AlAs), indium phosphide (InP), indium arsenide (InAs), tellurium (Te), vulcanized lead (PbS), indium antimonide (InSb), lead telluride (PbTe), lead selenide (PbSe), antimony telluride (SbTe), zinc-cadmium sulfide selenium (ZnCdSeS) copper and indium (CuInS), caesium lead chloride (CsPbCl, are vulcanized₃), caesium lead bromide (CsPbBr₃) and caesium lead iodide (CsPbI₃) group that is formed.

Spread powder includes titanium dioxide, silica, zirconium oxide, zinc oxide or aluminum oxide, can scatter the institute of ray structure 11 The light sent.Concentration expressed in percentage by weight (w/w) of the spread powder in matrix between 0.1~0.5% and with one 10nm~100nm or 10~50 μm of particle size.In one embodiment, weight hundred powder concentration of the spread powder (or wavelength convert particle) in matrix Thermogravimetric analyzer (thermogravimetric analyzer can be passed through；TGA) measure.Briefly it, in heating process, matrix It can be gradually risen and be removed after a specified temp is reached (evaporation or thermal cracking) due to temperature, residual spread powder (or ripple Long conversion particles).By measuring the change of weight, can obtain matrix and the respective weight of spread powder (or wavelength convert particle), And concentration expressed in percentage by weight of the spread powder in matrix.Or it can first measure the total of matrix and spread powder (or wavelength convert particle) Weight, recycle solvent to remove colloid, finally measure the weight of spread powder (or wavelength convert particle), and then try to achieve spread powder The concentration expressed in percentage by weight of (or wavelength convert particle) in matrix.

Wavelength convert particle 131 can absorb the first light that ray structure 11 is sent and is converted into and the first smooth different spectral The second light.If the first light mixes with the second light can produce the 3rd light.In the present embodiment, the 3rd light is in CIE1931 chromatic diagrams In there is point coordinates of the same colour (x, y), wherein, 0.27≤x≤0.285；0.23≤y≤0.26.In another embodiment, the first light The 3rd light, such as white light can be produced by being mixed with the second light.It can be made according to the concentration expressed in percentage by weight and species of wavelength convert particle Light-emitting device under hot stable state have a white light with respect to colour temperature (CCT) be 2200K~6500K (such as：2200K、2400K、 2700K, 3000K, 5700K, 6500K), in CIE1931 chromatic diagrams there is point coordinates of the same colour (x, y) can fall within seven Mike Asias It is more than 80 or the color rendering (CRI) more than 90 when the scope of oval (MacAdam ellipse), and with one.In another implementation Example, the first light mix the coloured light that can produce purple light, amber light, green glow, gold-tinted or other non-white light with the second light.

As known to Figure 1A~Fig. 1 C, the first side surface 123 of light penetrating object 12 and the 3rd side surface 125 are covered by reflecting layer 17 Lid, and lower surface 122 is also covered by reflecting layer 17, therefore light-emitting device 100 substantially only has three exiting surfaces.Change speech It, the just upper surface 121 directly through light penetrating object 12, the second side surface 124 and the 4th side table that ray structure 11 is sent Leave light-emitting device 100 in face 126.The lighting angle of ray structure 11 is about 140 degree, therefore the light more than 50% can be by upper surface 1101 (or upper surfaces 121 of light penetrating object 12) are outwards projected, and the upper surface 1101 of ray structure 11 is defined as ray structure 11 main exiting surface.Ray structure 11 is identical with the light direction of light-emitting device 100, its be all outwards projected by Z-direction (from Develop electro-optical device 100).Therefore, the exiting surface of the main exiting surface and light-emitting device 100 of ray structure 11 is substantial parallel.Herein Described lighting angle is defined as when brightness is the 50% of high-high brightness, and the angular range now included is light emitting anger Degree.The detailed description of lighting angle refers to the content of TaiWan, China application case 104103105.

In one embodiment, reflecting layer 17 includes metal, such as：Golden (Au), silver-colored (Ag), copper (Cu), chromium (Cr), aluminium (Al), platinum (Pt), nickel (Ni) or rhodium (Rh), therefore the light that ray structure 11 is sent occurs to reflect kenel in reflecting layer 17 For mirror-reflection (specular reflection).In addition, the thickness that reflecting layer 17 is metal and reflecting layer 17 isWhen, you can reach 99% reflectivity, thus, light-emitting device 100 can be reduced in the thickness of Y-direction.Less chi It is very little contribute to increase light-emitting device 100 application (such as：Mobile phone, liquid crystal display, wearable device (wrist-watch, bracelet, necklace Deng)).Reflecting layer 17 can be formed at light penetrating object 12 by sputter (sputter), plating or change plating mode.Optionally, can add One layer of tack coat (not shown), such as：Silica, to increase to each other then between reflecting layer 17 and light penetrating object 12 Power.Or first the progress of light penetrating object 12 one is surface-treated (such as：The corona treatment of helium, oxygen or nitrogen), then directly Reflecting layer 17 is formed, that is, reflecting layer 17 directly contacts with light penetrating object 12, thus increases between light penetrating object 12 and reflecting layer 17 Adhesion.

Two light emitting hosts in Figure 1A are one another in series.In other embodiment, ray structure 11 can include a light emitting host The light emitting host of more than at least two or three is one another in series, is in parallel, string and Hybrid connections or bridge-type connect.When luminous When structure 11 includes multiple light emitting hosts, multiple light emitting hosts can be collectively forming on a substrate, or multiple light emitting hosts are each From with a substrate, then it is fixed on a support plate, or part light emitting host is collectively forming on a substrate, and another part lights Main body each has a substrate, and the two is fixed on a support plate jointly again.In addition, two light emitting hosts in embodiment are to fall Assembling structure and it is electrically connected to each other by a conductive layer, however, two light emitting hosts are alternatively a horizontal configuration and by routing side Formula is electrically connected to each other.

When above-mentioned light emitting host is a heterojunction structure, the first type semiconductor layer and the second type semiconductor layer are, for example, to wrap Coating (cladding layer) and/or limiting layer (confinement layer), can provide electronics, hole respectively and have One is more than the energy gap of active layer, thus improves electronics, hole and is combined in active layer with luminous probability.First type semiconductor Layer, active layer and the second type semiconductor layer can include III-V race's semi-conducting material, such as Al_xIn_yGa_(1-x-y)N or Al_xIn_yGa_(1-x-y)P, wherein 0≤x, y≤1；(x+y)≤1.According to the material of active layer, light emitting host can send a crest value Feux rouges, the crest of (peak wavelength) or dominant wavelength (dominant wavelength) between 610nm and 650nm The indigo plant of green glow, crest value or dominant wavelength between 450nm and 490nm of value or dominant wavelength between 530nm and 570nm Light, crest value or dominant wavelength between 400nm~440nm purple light or crest value between 200nm~400nm ultraviolet light.

Fig. 2A~Fig. 2 H show the fabrication processing schematic perspective view of a light-emitting device in the embodiment of the utility model one, Fig. 3 A~Fig. 3 H are shown in Fig. 2A~Fig. 2 H along the sectional view of II-II lines respectively.For the sake of succinct, Fig. 2A~Fig. 2 H and Ray structure 11 in Fig. 3 A~Fig. 3 H only lays down a definition by taking cuboid as an example, however, in top view, other shapes, such as just Square, trapezoidal, parallelogram, rhombus, triangle, pentagon, hexagon, circle, it can also be applied to of the present utility model In all embodiments.Related thin portion structure may be referred to Figure 1A~Fig. 1 F description.

With reference to figure 2A and Fig. 3 A, multiple ray structures 11 are placed in the first temporary transient adhesive tape (by taking nine ray structures 11 as an example) On 191.Electrode 1118,11119 is bonded to the first temporary transient adhesive tape 191.In one embodiment, the quantity of ray structure 11 and row Row mode is only to illustrate, it is impossible to limits the scope of the utility model.

With reference to figure 2B and Fig. 3 B, the transparent body containing multiple wavelength convert particles 131 fully covers ray structure 11. Ray structure 11 is immersed in the transparent body, can't be exposed in environment (such as in air of surrounding).Then, enter Row heat treatment forms light penetrating object 12 so that the transparent body is fully cured.In one embodiment, the transparent body can utilize dispensing (spray), apply The modes such as cloth (coating), spraying (dispensing), printing (screen printing) are formed on ray structure 11.If The transparent body is to be formed in a manner of spraying (spraying) or dispensing (dispensing) on ray structure 11, and the transparent body is whole Different height (Z-direction) is had on the diverse location in individual region.After hardening, the transparent body is cured into light penetrating object 12, and thoroughly Body of light 12 also has different height on diverse location.

Furthermore due to gravity, in the curing process, wavelength convert particle 131 understands natural sedimentation, therefore, most ripple Long conversion particles 131 can contact ray structure 11, and the wavelength convert particle 131 of only a fraction can be attached to ray structure 11 Side surface (detailed construction refers to Figure 1B and Fig. 1 C associated description).In other embodiments, it can control the temperature of solidification And the time determines distribution of the wavelength convert particle 131 in light penetrating object 12.For example, when wavelength convert particle 131 When being not yet precipitated to bottom and the transparent body has been fully cured, and wavelength convert particle 131 can be suspended among light penetrating object 12, and not with Ray structure 11 contacts.Or in the transparent body add antiprecipitant (such as：Silica), prevented also from wavelength convert Grain 131 is precipitated to bottom in solidification process, may be such that wavelength convert particle 131 can be evenly dispersed in light penetrating object 12 it In.

In another embodiment, the transparent body containing multiple wavelength convert particles 131 can be initially formed as a wavelength conversion sheet, Fit in again on ray structure 11.Fitting is by the closely sealed of mold (not shown) and lower mould (not shown), while to ripple Long conversion sheet heating and pressurization, make it closely can be engaged with ray structure 11 to soften wavelength conversion sheet.In addition, work as upper mould Tool and lower mould are very close to but being evacuated when wavelength conversion sheet not yet contacts ray structure 11, can reduce wavelength conversion sheet and hair Bubble between photo structure 11, improve the engaging force between wavelength conversion sheet and ray structure 11.

With reference to figure 2C and Fig. 3 C, a physical step that removes is carried out to planarize light penetrating object 12, makes the upper table of light penetrating object 12 Face 121 becomes substantially planar.

With reference to figure 2D and Fig. 3 D, the second temporary transient adhesive tape 194 is used for being bonded the upper surface 121 of light penetrating object 12, and first is temporary transient Adhesive tape 191 is then removed to expose electrode 1118,1119.

With reference to figure 2E and Fig. 3 E, flipchart 2D (or Fig. 3 D) structure, and cutting step is carried out to form multiple grooves 231 In light penetrating object 12.The section shape of groove 231 depends on used cutter shape and size during manufacture craft.By In the position of section, groove 231 is not depicted in Fig. 3 E.Fig. 4 A are diagrammatic cross-sections of Fig. 2 E along III-III line segments, therefore It is visual to obtain groove 231.

With reference to figure 2F and Fig. 3 F, scolding tin glue is coated on electrode 1118,1119, and carries out a reflow manufacture craft with shape Into metal coupling 15A, the 15B directly contacted with electrode 1118,1119.In detail, scolding tin glue is coated with electrode 1118,1119 On, and scolding tin glue has a projected area to be less than electrode 1118,1119 and only covers the electrode 1118,1119 of a part.Due to electricity Pole 1118, the metal of 1119 bottoms are gold, pass through layer gold and the wetting reaction (wetting reaction) of scolding tin glue, scolding tin Glue can be expanded with electrode 1118,1119 corresponding to fully covering, that is, scolding tin glue has and is substantially equal to counter electrode 1118th, 1119 projected area.Furthermore, after reflow manufacture craft, scolding tin glue can solidify and form metal coupling 15A, 15B. In this stage, metal coupling 15A, 15B are without physical from removing step (description as after) and have a profile without wedge angle. Metal coupling 15A, 15B have the area of section tapered into Z-direction.Further, since manufacture craft variability, metal Projection 15A can have a shape for being different from metal coupling 15B.In fig. ib, metal coupling 15A is convex different from metal with one Block 15B section.Other the related descriptions of scolding tin glue refer to foregoing paragraph and omitted for succinct event in this.

Reference picture 2G and Fig. 3 G, it is in its uncured state that multiple reflective particle (not shown), which are mixed into a matrix to form one, Glue-line (color of glue-line, which may depend on, is mixed into reflective particle, common color for white).Then, it is convex with glue-line covering metal Block 15A, 15B, light penetrating object 12 and groove 231 (it is preferred that groove 231 be completely covered by glue-line or only small part region not by Covering or residual bubble) so that metal coupling 15A, 15B, light penetrating object 12 are not exposed in environment (such as the sky exposed to surrounding In gas).

Then, fully solidify glue-line, and then form reflecting layer 17.Now, the height in reflecting layer 17 is more than metal coupling 15A, 15B height.Reflecting layer 17 can utilize dispensing (spray), coating (coating), spraying (dispensing), printing Modes such as (screen printing) is formed.In the present embodiment, because glue-line is to spray (spraying) or dispensing (dispensing) mode is formed, therefore glue-line has different height (Z-direction) (ginseng on the diverse location of whole region According to Fig. 3 G).After hardening, glue-line is cured into reflecting layer 17, and reflecting layer 17 also has different height on diverse location.Class As, reflecting layer 17 or a preformed reflector plate, then fit on light penetrating object 12.The description of fitting refers to foregoing phase Close paragraph.

Box dam 195 is optionally provided for limiting a region.Therefore, when inserting glue-line, glue-line can be limited In the region.In the case of box dam 195 is not provided with, box dam 195 helps to reduce glue-line usage amount.Due to section Position, the structure that glue-line inserts groove 231 is shown in Fig. 4 B.

With reference to figure 2H and Fig. 3 H, box dam 195 is removed, and carries out physical (the grinding or cutting) step that removes until exposed gold Belong to projection 15A, 15B.It is physical removal step in, partially reflecting layer 17 first be removed until expose metal coupling 15A, 15B.Further, removal step can be persistently carried out again, and therefore, reflecting layer 17 and metal coupling 15A, 15B can be removed simultaneously. In physical removal step, reflecting layer 17 is removed simultaneously with metal coupling 15A, 15B, therefore reflecting layer 17 and metal coupling 15A, 15B lower surface 1714,15A1,15B1 essence copline, and lower surface 1714,15A1,15B1 become substantial each other It is flat.Related detailed description refers to foregoing paragraph and omitted for succinct event in this.

In the present embodiment, after physical removal step, metal coupling 15A, 15B lower surface 15A1,15B1's The maximal roughness that maximal roughness poor (Ra1) may be slightly larger than, and be equal to or be slightly less than the lower surface 1714 of reflecting layer 17 is poor (Ra2). It is convex that metal is measured by surface profile rugosity instrument (alpha step film thickness measuring instrument) Block 15A, 15B lower surface 15A1,15B1, in one 50 μm of measurement length, metal coupling 15A, 15B lower surface 15A1, The difference of peak and minimum point (it is poor to be defined as maximal roughness) is Ra1 in 15B1；Similarly, the following table in reflecting layer 17 is measured During face 1714, in one 50 μm of measurement length, the difference of peak and minimum point is in the lower surface 1714 in reflecting layer 17 Ra2；2μm≤Ra1≤15μm；2μm≤Ra2≤15μm；0≤|Ra2-Ra1|≤13μm.

Physical removal step is carried out using mechanical cutter.The material of mechanical cutter can include high-carbon steel, diamond, Ceramics or boron oxide.During removal, water (lapping liquid (slurry) or chemical solution need not be added) can be only added With reduce cutter and material to be cut (such as：Reflecting layer, light penetrating object or metal coupling) between because friction and elevated temperature Degree, and thus clean the material to be cut removed.Moreover, it is more if the hardness for the cutter selected is more than material to be cut Individual scratch (not shown) can be formed on material to be cut, and it can be by observed by light microscope.So, in one embodiment, , possibly can not be via observation by light microscope to scraping by adjusting cutting parameter (such as material of cutting speed or cutter) Trace.

Finally, carry out cutting step (not shown) and remove the second temporary transient adhesive tape 194 to form multiple hairs independent of each other Electro-optical device.

Temporary transient adhesive tape 191,194 can temporarily fix ray structure or light-emitting device when being in manufacturing process.Temporarily Adhesive tape 191,194 includes blue film, fin/glue, photodissociation glued membrane (UV release tape) or poly- polyethylene terephthalate (PET)。

Fig. 5 A show the top view of a light-emitting device 200 in the embodiment of the utility model one, and to clearly show that, Fig. 5 A are only aobvious Show part layer and each layer all using depicted as solid lines regardless of whether its material is nontransparent, transparent or semitransparent.Fig. 5 B show Fig. 5 A edges The diagrammatic cross-section of X-X line segments.Other views refer to the corresponding description of light-emitting device 100.

As shown in Fig. 5 A and Fig. 5 B, light-emitting device 200 includes a ray structure 11 ', a light penetrating object 12, multiple wavelength converts Particle 131, a reflecting layer 17 and metal coupling (metal bump) 15A, 15B.As shown in Figure 5 B, ray structure 11 ' only includes One light emitting host.Light emitting host includes non-patterned substrate 110 ', the first type semiconductor layer 1111, an active layer 1112,1 the Two type semiconductor layers 1113.In the present embodiment, wavelength convert particle 131 is scattered in light penetrating object 12 and is not precipitated to bottom.

One groove 112 is formed with the first type semiconductor layer 1111 of exposure.One first insulating barrier 1114 is formed in groove 112 And the first type semiconductor layer of covering part 1111.One conductive layer 106A forms on the first insulating barrier 1114 and exhausted not by first In the first type semiconductor layer 1111 that edge layer 1114 is covered.Second insulating barrier 1115 is formed with covering part conductive layer 106A. One mirror layer 1121 is formed in the second type semiconductor layer 1113.First electrode 1118 is formed not to be covered by the second insulating barrier 1115 The conductive layer 106A of lid, and the first type semiconductor layer 1111 is electrically connected by conductive layer 106A.First electrode 1118 is not complete Cover the conductive layer 106A exposed from the second insulating barrier 1115, thus the conductive layer 106A of expose portion.Metal coupling 15A Formed directly to contact first electrode 1118, and directly contact the conductive layer 106A exposed from first electrode 1118.This Outside, metal coupling 15A also cover or directly contact portion the second insulating barrier 1115.One ohmic contact layer can be selectively formed Between the second type semiconductor layer 1113 and mirror layer 1121, to reduce the driving voltage of light-emitting device 200.

Furthermore conductive layer 106B is further formed in mirror layer 1121.Second insulating barrier 1115 is further formed to cover Partial conductive layer 106B.Second electrode 1119 is formed in the second insulating barrier 1115 and not covered by the second insulating barrier 1115 Conductive layer 106B on, to electrically connect the second type semiconductor layer 1113.Metal coupling 15B is formed directly to contact second electrode 1119.In operation, it is assumed that the first type semiconductor layer 1111 is a n-type semiconductor layer and the second type semiconductor layer 11113 is a p-type Semiconductor layer, when light-emitting device 200 electrically connects with external power source, electric current can flow through metal coupling 15B, second electrode 1119, Conductive layer 106B, mirror layer 1121, the second type semiconductor layer 1113, active layers 1112, the first type semiconductor layer 1111, conductive layer 106A, first electrode 1118 and metal coupling 15A, light-emitting device 200 are thus luminous.

The bottom 171 in reflecting layer 17 covers and directly contacts the second insulating barrier 1115 and metal coupling 15A, 15B side Wall 15A2,15B2.The side 1181 of first electrode 1118 is directly covered and do not connect directly with bottom 171 by metal coupling 15A Touch.Other related descriptions refer to the relevant paragraph of light-emitting device 100.

Fig. 6 A show the sectional view of the back light unit of a side casting type liquid crystal display.Back light unit include a light emitting source 901, One light guide plate 902 and a diffuser plate 903, are arranged on light guide plate 902.Light emitting source 901 includes a support plate 9011, multiple luminous Device 100 is arranged on support plate 9011, and circuit structure (not shown) is formed on support plate 9011 to control light-emitting device 100.Light emitting source 901 is arranged on two sides of light guide plate 902.When light-emitting device 100 lights, the light that is sent by it (R) outwards projected by Z-direction and (leave light-emitting device 100), therefore support plate 9011 is vertically arranged with light guide plate 902 and (implies that hair The light-emitting area of electro-optical device 100 is vertical with support plate 9011), relatively efficiently light (R) can be injected in light guide plate 902.

When light (R) injects light guide plate 902, light guide plate 902 can change the direction of light (R) and towards diffuser plate 903. Optionally, a reflector 904 may be disposed on the light guide plate 902 relative to diffuser plate 903, to reflection light (R).It is luminous Metal coupling 15A, 15B of device 100 are directly fixed on the circuit structure of support plate 9011 by solder (solder), change speech It, does not have another substrate (submount) between metal coupling 15A, 15B and support plate 9011.In one embodiment, support plate 9011 structures that can be one of the forming with reflector 904 and presentation L-type, and light-emitting device 100 is only arranged at the one of light guide plate 902 Side, it thus can reduce manufacture craft cost and simplify assembling flow path.

Fig. 6 B show the stereogram of light emitting source 901 and light guide plate 902 in Fig. 6 A.Light-emitting device 100 lines up one along the X direction Tie up array, and the long side of the parallel support plate 9011 in reflecting layer 17.In the present embodiment, the number and arrangement mode of light-emitting device 100 The not limited to this only as example.Due to light-emitting device 100 in long side direction (X-direction) lighting angle between 130~150 Degree, therefore the distance (D5) between light-emitting device of the present utility model 100 between 12mm~15mm and will not make light guide plate 902 produce dark space.According to different applications, distance (D5) can be between 4mm~15mm.

It is to be understood that the above embodiments are that can be combined with each other or replace in appropriate circumstances in the utility model, Rather than it is only limitted to described specific embodiment.Each embodiment cited by the utility model only to illustrate the utility model, And it is not used to limit the scope of the utility model.Anyone any obvious modification or change made to the utility model Connect and do not depart from spirit and scope of the present utility model.

Claims

1. a kind of light-emitting device, it is characterised in that the light-emitting device includes：

Ray structure, there is an electrode；

Light penetrating object, the ray structure is covered, and with one first side surface and one second side surface substantially perpendicular to one another；

Reflecting layer, cover first side surface and do not cover second side surface；And

Metal coupling, it is formed directly on the electrode.

2. light-emitting device as claimed in claim 1, it is characterised in that the light penetrating object has a lower surface, by the reflecting layer institute Covering.

3. light-emitting device as claimed in claim 1, it is characterised in that the light penetrating object also includes the 3rd side surface and the 4th side table Face, the reflecting layer cover the 3rd side surface and do not cover the 4th side surface.

4. light-emitting device as claimed in claim 3, it is characterised in that first side surface and the 3rd side surface phase each other It is right；Second side surface and the 4th side surface are relative to each other.

5. light-emitting device as claimed in claim 1, it is characterised in that the metal coupling has a side wall, by the reflecting layer institute Covering.

6. light-emitting device as claimed in claim 1, it is characterised in that the ray structure has insulating barrier, and the insulating barrier has A part is covered by the metal coupling.

7. light-emitting device as claimed in claim 6, it is characterised in that the reflecting layer covers the insulating barrier.

8. light-emitting device as claimed in claim 1, it is characterised in that the reflecting layer has an inclined inner surface.

9. light-emitting device as claimed in claim 8, it is characterised in that the light penetrating object has a upper surface, and the inner surface is with being somebody's turn to do Upper surface accompanies one 60~80 degree of angle.

10. light-emitting device as claimed in claim 1, it is characterised in that the light-emitting device also includes more wavelength convert particles Or the wavelength convert particle of a variety of species.

11. light-emitting device as claimed in claim 1, it is characterised in that the reflecting layer has a lower surface and a scratch shape Into in the lower surface.

12. light-emitting device as claimed in claim 1, it is characterised in that the ray structure includes patterned substrate and at least two Individual light emitting host is collectively forming on the patterned substrate.

13. light-emitting device as claimed in claim 1, it is characterised in that the light-emitting device only includes three exiting surfaces.

14. a kind of back light unit, it is characterised in that the back light unit includes：

Light guide plate；

Diffuser plate, it is arranged on the light guide plate；And

Light emitting source, the side of the light guide plate is arranged on, and it is luminous comprising a support plate and as described in any in claim 1 to 13 Device, it is arranged on the support plate.

15. a kind of side casting type liquid crystal display, it is characterised in that the side casting type liquid crystal display includes as claimed in claim 14 Back light unit.