CN207117533U - A kind of lighting system system - Google Patents
A kind of lighting system system Download PDFInfo
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- CN207117533U CN207117533U CN201720851069.4U CN201720851069U CN207117533U CN 207117533 U CN207117533 U CN 207117533U CN 201720851069 U CN201720851069 U CN 201720851069U CN 207117533 U CN207117533 U CN 207117533U
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- 230000005611 electricity Effects 0.000 claims abstract description 28
- 238000010248 power generation Methods 0.000 claims abstract description 23
- 238000004146 energy storage Methods 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 13
- 230000005619 thermoelectricity Effects 0.000 claims 1
- 238000003780 insertion Methods 0.000 abstract description 4
- 230000037431 insertion Effects 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000005679 Peltier effect Effects 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 4
- 230000005680 Thomson effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004210 cathodic protection Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 210000000031 electric organ Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/60—Thermal-PV hybrids
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of lighting system system, including solar energy power generating structure be connected with the TRT of thermo-electric generation structure composition one, with TRT and the energy storage device of storing up electricity, the inverter being connected with energy storage device, the lighting apparatus that is connected by 220V with inverter；Solar energy power generating structure includes the concentrator of optically focused and absorbs the photovoltaic power generation plate of photon, photovoltaic power generation plate connects energy storage device with external circuit, and thermo-electric generation structure includes thermo-electric generation plate below the photovoltaic power generation plate, located at thermo-electric generation plate bottom and pulls open the bottom heat spreader, the metal heat-conducting tube of bottom heat spreader connection insertion ground end, metal heat-conducting tube connection that the temperature difference generated electricity and collects moisture in air and be back to the condenser that bottom heat spreader radiated；Solar energy power generating structure and thermo-electric generation structure composition integrative-structure and in the form of an array arranged distribution.With safe and reliable, service life length, maintenance cost is low, makes full use of the energy, reduces energy resource consumption.
Description
Technical field
A kind of construction applications of electricity generation system are the utility model is related to, more particularly to one kind is sent out using photovoltaic generation and the temperature difference
Electric forming integrative-structure, and combine the lighting system system that temperature difference mobile phone underground water further widens temperature difference lifting generating effect.
Background technology
At present, solar power generation is divided into solar energy power generating and can focus on very much heat generating.Photovoltaic generation：Solar-electricity
Pond plate is that a pair of light have response and can convert light energy into the device of electric power, and can produce the material of photovoltaic effect has many kinds, such as：
Monocrystalline silicon, polysilicon, non-crystalline silicon, GaAs, selenium indium copper etc..Their electricity generating principle is essentially identical, is now described by taking crystal as an example
Light power generation process, P-type crystal silicon can obtain N-type silicon through overdoping phosphorus, form P-N junction.When light irradiates solar cell surface
When, a part of photon is absorbed by silicon materials；The energy transmission of photon has given silicon atom, electronics is more moved, and turns into freely
Electronics gathers in P-N junction both sides forms potential difference, when circuit is connected in outside, in the presence of the voltage, it will have electric current
Flow through external circuit and produce certain power output.The essence of this process is：Photon energy is converted into the process of electric energy.
And Salar light-gathering thermo-electric generation is that heat energy is converted directly into electric energy using Xi Baike effects.Principle is：No matter
Thermoelectric material is to be used to freeze or generate electricity, and what is utilized is all the physical property of thermoelectric material in itself.Used thermoelectric material hair
Electricity is substantially three basic effects, i.e. Seebeck effect, Peltier effect and Thomson effect.
Seebeck (Seeback) effect：By two kinds of different conductor a and b（N-type and p-type semiconductor）It is composed in series back
Road, and joint 1 and joint 2 is maintained at different temperature T1 and T2（T1>T2）, hole and n-type in p-type semiconductor are partly led
Electrons in body are accumulated to high/low temperature end respectively, and a potential production is so just had between conductor b open-circuit position X and y
Raw, this effect is referred to as difference of temperature, i.e. Seebeck effect.It will be passed through by the different semi-conductor thermoelectric material of N, P two types
The higher flow deflector series connection of electrical conductivity, and establish the temperature difference at A, B both ends, then apply voltage at load RL both ends, you can be formed with
The electric organ of certain power output and output voltage, thermoelectromotive force and the temperature of two joints and the material of composition closed-loop path
It is relevant.In the little scope of temperature difference, thermoelectromotive force Eab is directly proportional to temperature difference T, is represented by Eab=α ab Δ T,
In formula：α ab are the thermoelectric power of Seebeck coefficient, also known as material pair, α ab=dE/dT, unit V/K.To common material
For material, Seebeck coefficient is relatively low, but for semiconductor, Seebeck coefficient is higher, generally semiconductor temperature differential generating
The thermoelectric power of device is hundreds of μ V/K.So Seebeck effect is more obvious in a semiconductor material.With semiconductor skill
The development of art, this effect obtain more attention and application.
Peltier (Peltier) effect：The phenomenon opposite with Seebeck effect is Peltier effect, is applied at x and y both ends
Add an applied voltage, electric current will be had in the loop being made up of two kinds of conductors of a, b, by, while by connecing in a, b conductor
Occur absorbing heat respectively at first 1,2 and exothermic phenomenon.Assuming that the heat absorption of joint（Or heat release）Speed is Q, and experiment finds Q and loop
In electric current, directly proportional, i.e. Q=π ab I, in formula：π ab are proportionality constant, referred to as Peltier coefficient, and its unit is W/A,
It can be represented with the unit V of voltage.The microphysics essence of Peltier effect is derived from carrier and is forming two kinds of conductors in loop
In potential energy difference.When carrier enters another conductor from a kind of conductor through joint, it is necessary near joints and lattice
Generation energy exchange, also referred to as thermal vibration, cause two joints to occur absorbing heat respectively and exothermic phenomenon, and produce the Δ T temperature difference.
Thomson (Thomson) effect：Two above effect be directed to by two kinds of different metals or semiconductor group into return
Road, Thomson effect are then the difference of temperature being present in single uniform conductor.If flow through the electric current of a uniform flow conductor
For I, the temperature difference T=T1-T2 put on the sense of current, then the neither endothermic nor exothermic speed on this section of conductor is Q=β I Δs T
；In formula：β is Thomson coefficient, and its unit is identical with Seebeck coefficient (V/K).The cause and Peltier effect of Thomson effect
It is similar, but in Thomson effect, the capacity volume variance of carrier is as caused by thermograde.Thomson coefficient, Seebeck system
Number, the relational expression between Peltier coefficient be α=π/T,。
But the above-mentioned generation mode referred to could not utilize solar energy and the energy of photo-thermal, its conversion ratio well
Extremely low, the simple photovoltaic generation for using solar energy is all no so far to solve the problems, such as to improve conversion ratio well, and uses the temperature difference
Generate electricity and be that the temperature difference can not be widened further there is also defect, can be only sustained in a certain temperature approach, it is impossible to lifting hair well
Electrical efficiency.
The content of the invention
The shortcomings that the purpose of this utility model is to overcome above-mentioned prior art, there is provided a kind of lighting system system, should
The form that lighting system system forms integrative-structure using solar energy power generating and thermo-electric generation is generated electricity, with reference to corresponding
The complete whole system of the compositions such as electric storage device, inverter and lighting apparatus.Utilize the optically focused of solar energy power generating structure
Device gets together sunshine, is radiated in photovoltaic power generation plate and is generated electricity, simultaneously because optically focused temperature is very high, photovoltaic generation
Thermo-electric generation plate below plate will carry out radiating by bottom heat spreader and pull open the temperature difference being generated electricity；Bottom heat spreader connects metal
Heat conducting pipe inserts ground end by the water in condensing unit collection air, and because ground end temperature is lower than surface temperature, condenser is collected
The water come further can radiate to bottom heat spreader, and the temperature difference of thermo-electric generation plate is also further pulled open and lifts generating
Efficiency.With safe and reliable, service life length, maintenance cost is low, without noise；Solar energy and any thermal source etc. can be utilized to send out
Electricity；The area use of any special climate is adapted to, the energy is made full use of, reduces energy resource consumption.
Technical scheme is used by the utility model solves its technical problem：A kind of lighting system system, including the sun
Energy storage that energy photovoltaic power generation structure is connected with the TRT of thermo-electric generation structure composition one, with TRT and storing up electricity fills
The inverter put, being connected with energy storage device, the lighting apparatus being connected by 220V with inverter；Solar energy power generating knot
Structure includes the concentrator of optically focused and absorbs the photovoltaic power generation plate of photon, and photovoltaic power generation plate connects energy storage device, temperature with external circuit
Poor electrification structure includes thermo-electric generation plate below the photovoltaic power generation plate, located at thermo-electric generation plate bottom and pulls open the temperature difference and carries out
The bottom heat spreader of generating, the metal heat-conducting tube of bottom heat spreader connection insertion ground end, metal heat-conducting tube connection are collected in air
Moisture is simultaneously back to the condenser that bottom heat spreader is radiated；Solar energy power generating structure and thermo-electric generation structure composition one
Body structure and in the form of an array arranged distribution.
Further, described thermo-electric generation plate includes N-type semiconductor thermoelectric material, P-type semiconductor thermoelectric material, N-type
Semi-conductor thermoelectric material one end forms the A flow deflectors being connected in series, N-type half with one end of corresponding N-type semiconductor thermoelectric material
The B water conservancy diversion that the C flow deflectors and the P-type semiconductor thermoelectric material other end that the conductor thermoelectric material other end is connected in series are connected in series
Piece and C flow deflectors and B flow deflectors form loop-coupled RL and loaded；When hot junction is heated, shape between A flow deflectors and B flow deflectors
Into T1 temperature and T2 temperature, the temperature difference is formed between T1 temperature and T2 temperature, two kinds of carriers all flow to cold end, and RL loads both ends are applied
Making alive, form the thermoelectric generator with certain power output and output voltage；Thermoelectric generator contains 18 group of -128 group temperature
Poor power generation plate and in series or in parallel repeated arrangement.
In addition, thermo-electric generation plate except using sunshine optically focused heat energy power-generating in addition to, can also be used city processing rubbish heat,
Industrial exhaust heat, used heat and vehicle exhaust heat, underground heat etc. generate electricity, and make full use of the energy, reduce energy resource consumption and environmental pollution；Should
Thermo-electric generation plate generates electricity very possible application field in terms of small-power, such as various sensing circuits, gate and the wrong electricity that disappears
μ W, the mW level power supplies on road, the small generator in small short-range communication means and Physiologic Studies etc..Using special at some
Occasion, especially in the power station of space；At present, existing many commercialized heat to electricity conversion in satellite and other spacecrafts
Device input runs well, and using effect is very good, it may also be used for the cathodic protection of underwater oil pipe, automatic weather from far-off regions are pre-
Power supply outfit called out the stops etc..
Further, described TRT also includes wind-driven generator structure and is used for auxiliary power generation.
In summary, lighting system system of the present utility model forms one using solar energy power generating and thermo-electric generation
The form of structure is generated electricity, with reference to the complete whole system of the compositions such as corresponding electric storage device, inverter and lighting apparatus.
Sunshine is got together using the beam condensing unit of solar energy power generating structure, is radiated in photovoltaic power generation plate and is generated electricity,
Simultaneously because optically focused temperature is very high, the thermo-electric generation plate below photovoltaic power generation plate will carry out radiating by bottom heat spreader and pull open temperature
Difference is generated electricity；Bottom heat spreader connection metal heat-conducting tube insertion ground end collects the water in air by condensing unit, due to ground
Bottom temperature is lower than surface temperature, and condenser, which collects the water come, further to be radiated to bottom heat spreader, thermo-electric generation plate
Temperature difference also further pull open and lift generating efficiency.With safe and reliable, service life length, maintenance cost is low, does not make an uproar
Sound；Solar energy and any thermal source etc. can be utilized to generate electricity；The area use of any special climate is adapted to, makes full use of the energy,
Reduce energy resource consumption.
Brief description of the drawings
Fig. 1 is a kind of structure connection block diagram of lighting system system of the utility model embodiment 1；
Fig. 2 is the schematic diagram that photovoltaic power generation plate is combined with thermo-electric generation plate；
Fig. 3 is the principle schematic of thermo-electric generation plate.
Embodiment
Embodiment 1
A kind of lighting system system described by the present embodiment 1, as shown in Figure 1 and Figure 2, including solar energy power generating knot
That structure is connected with the TRT 1 of thermo-electric generation structure composition one, with TRT and the energy storage device 2 of storing up electricity and energy storage
The inverter 3 of device connection, the lighting apparatus 4 being connected by 220V with inverter；Solar energy power generating structure includes
The concentrator of optically focused and the photovoltaic power generation plate 5 for absorbing photon, photovoltaic power generation plate connect energy storage device, thermo-electric generation with external circuit
Structure includes thermo-electric generation plate 6 below the photovoltaic power generation plate, located at thermo-electric generation plate bottom and pulls open the temperature difference and is generated electricity
Bottom heat spreader, bottom heat spreader connection insertion ground end metal heat-conducting tube, metal heat-conducting tube connection collect moisture in air
And it is back to the condenser that bottom heat spreader is radiated；Solar energy power generating structure is integrally tied with thermo-electric generation structure composition
Structure and in the form of an array arranged distribution.
As shown in figure 3, the thermo-electric generation plate includes N-type semiconductor thermoelectric material 7, P-type semiconductor thermoelectric material 8, N-type half
Conductor thermoelectric material one end forms the A flow deflectors 9 being connected in series with one end of corresponding N-type semiconductor thermoelectric material, N-type is partly led
The B flow deflectors that the C flow deflectors 10 and the P-type semiconductor thermoelectric material other end that the body heat electric material other end is connected in series are connected in series
11st, loop-coupled RL loads 12 are formed with C flow deflectors and B flow deflectors；When hot junction is heated, between A flow deflectors and B flow deflectors
T1 temperature and T2 temperature are formed, the temperature difference is formed between T1 temperature and T2 temperature, two kinds of carriers all flow to cold end, RL loads both ends
Apply voltage, form the thermoelectric generator with certain power output and output voltage；Thermoelectric generator contains 18 group of -128 group
Thermo-electric generation plate and in series or in parallel repeated arrangement.
In addition, thermo-electric generation plate except using sunshine optically focused heat energy power-generating in addition to, can also be used city processing rubbish heat,
Industrial exhaust heat, used heat and vehicle exhaust heat, underground heat etc. generate electricity, and make full use of the energy, reduce energy resource consumption and environmental pollution；Should
Thermo-electric generation plate generates electricity very possible application field in terms of small-power, such as various sensing circuits, gate and the wrong electricity that disappears
μ W, the mW level power supplies on road, the small generator in small short-range communication means and Physiologic Studies etc..Using special at some
Occasion, especially in the power station of space；At present, existing many commercialized heat to electricity conversion in satellite and other spacecrafts
Device input runs well, and using effect is very good, it may also be used for the cathodic protection of underwater oil pipe, automatic weather from far-off regions are pre-
Power supply outfit called out the stops etc..
The TRT also includes wind-driven generator structure and is used for auxiliary power generation.
It is described above, only it is preferred embodiment of the present utility model, not structure of the present utility model is made any
Formal limitation.Every any simple modification made according to the technical essence of the utility model to above example, it is equal
Change and modification, in the range of still falling within the technical solution of the utility model.
Claims (3)
1. a kind of lighting system system, it is characterised in that including solar energy power generating structure and thermo-electric generation structure composition one
The TRT of body, be connected with TRT and the energy storage device of storing up electricity, be connected with energy storage device inverter, pass through
The lighting apparatus that 220V is connected with inverter；The concentrator of solar energy power generating structure including optically focused and and absorb photon
Photovoltaic power generation plate, photovoltaic power generation plate connect energy storage device with external circuit, and thermo-electric generation structure includes being located under photovoltaic power generation plate
The thermo-electric generation plate of side, located at thermo-electric generation plate bottom and pull open bottom heat spreader, bottom heat spreader that the temperature difference generated electricity and connect
Patch the metal heat-conducting tube into ground end, metal heat-conducting tube connection collects moisture in air and is back to bottom heat spreader and radiated
Condenser；Solar energy power generating structure and thermo-electric generation structure composition integrative-structure and in the form of an array arranged distribution.
2. a kind of lighting system system according to claim 1, it is characterised in that described thermo-electric generation plate includes N-type
Semi-conductor thermoelectric material, P-type semiconductor thermoelectric material, N-type semiconductor thermoelectric material one end and corresponding N-type semiconductor thermoelectricity material
One end of material forms C flow deflectors and the p-type half that A flow deflectors, the N-type semiconductor thermoelectric material other end being connected in series are connected in series
The B flow deflectors and C flow deflectors and B flow deflectors that the conductor thermoelectric material other end is connected in series form loop-coupled RL and loaded；When
When hot junction are heated, T1 temperature and T2 temperature are formed between A flow deflectors and B flow deflectors, the temperature difference is formed between T1 temperature and T2 temperature,
RL loads both ends apply voltage, form the thermoelectric generator with certain power output and output voltage；Thermoelectric generator contains
18 group of -128 group thermo-electric generation plate and in series or in parallel repeated arrangement.
3. a kind of lighting system system according to claim 2, it is characterised in that described TRT also includes wind
Energy electric generator structure is used for auxiliary power generation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720851069.4U CN207117533U (en) | 2017-07-14 | 2017-07-14 | A kind of lighting system system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720851069.4U CN207117533U (en) | 2017-07-14 | 2017-07-14 | A kind of lighting system system |
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| Publication Number | Publication Date |
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| CN207117533U true CN207117533U (en) | 2018-03-16 |
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| CN201720851069.4U Expired - Fee Related CN207117533U (en) | 2017-07-14 | 2017-07-14 | A kind of lighting system system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359850A (en) * | 2017-07-14 | 2017-11-17 | 江门市卡迪光电科技有限公司 | A kind of lighting system system |
| TWI732731B (en) * | 2020-12-31 | 2021-07-01 | 國立虎尾科技大學 | Automatic lighting device |
-
2017
- 2017-07-14 CN CN201720851069.4U patent/CN207117533U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359850A (en) * | 2017-07-14 | 2017-11-17 | 江门市卡迪光电科技有限公司 | A kind of lighting system system |
| TWI732731B (en) * | 2020-12-31 | 2021-07-01 | 國立虎尾科技大學 | Automatic lighting device |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180719 Address after: 529000 4, 1 (1), 1 Nanshan Road, Jianghai District, Jiangmen, Guangdong. Patentee after: Guangdong blue Lighting Co. Ltd. Address before: 529000 1 1 Wuyi Road, Jianghai District, Jiangmen, Guangdong (self compiled A02) Patentee before: Jiangmen kardy Photoelectric Technology Co. Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200420 Address after: 529000 Building 2, No. 442, Wuyi Road, Jianghai District, Jiangmen City, Guangdong Province (self compiled B9) Patentee after: JIANGMEN CRDLIGHT OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 529000 Nanshan Road, Jianghai District, Jiangmen City, Guangdong Province, No. 105, 1 Building, 4 Floors (Whole Floor) Patentee before: GUANGDONG YANYANG LIGHTING Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180316 Termination date: 20200714 |