CN207082720U - A kind of low cost, the short cavity distributed feedback laser of high finished product rate - Google Patents

A kind of low cost, the short cavity distributed feedback laser of high finished product rate Download PDF

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Publication number
CN207082720U
CN207082720U CN201720829192.6U CN201720829192U CN207082720U CN 207082720 U CN207082720 U CN 207082720U CN 201720829192 U CN201720829192 U CN 201720829192U CN 207082720 U CN207082720 U CN 207082720U
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laser
echo area
uptake zone
grating
distributed feedback
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国伟华
刘功海
赵龚媛
陆巧银
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Ningbo Yuanxin Optoelectronic Technology Co., Ltd.
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Aorui Peak (wuhan) Electronic Technology Co Ltd
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Abstract

It the utility model is related to semiconductor laser field, it is proposed that a kind of low cost, the short cavity distributed feedback laser of high finished product rate.The laser contains gain region, echo area and the part of uptake zone three:The gain region needs Injection Current, and gain is provided to laser;One end of gain region is the echo area, the region contain with gain region identical core structure, but the region is not injected into electric current;Bragg grating is all contained in active area and echo area, and the grating layer of wherein active area contains one section of phase shift;One section of uptake zone is integrated behind echo area, its waveguide transmission layer is similarly active quantum-well materials, and uptake zone can increase the waveguide absorption of uptake zone under reverse-biased, to reduce end face reflection, and the working condition of monitoring laser;The other end of gain region is the output end face of laser, and the end face is coated with anti-reflection film to reduce reflection.This laser scheme can make laser chamber grow it is shorter when still there is relatively low gain for threshold value to become reconciled side mode suppression ratio, while have that manufacture difficulty is small, cost is low and the characteristics of high yield rate.

Description

A kind of low cost, the short cavity distributed feedback laser of high finished product rate
Technical field
The invention belongs to semiconductor laser field.
Background technology
With the development of high-capacity and ultra high-speed Fibre Optical Communication Technology and the update of data center, high straight modulation rate Semiconductor laser grow into one of Primary Component of optical fiber telecommunications system and optical-fiber network of future generation.In dense wave division multipurpose (DWDM) in system, 25Gb/s high speed directly modulates the emitter that laser can be used for forming 100Gb/s Ethernet of future generation. In the development of LAN, it is then the key for realizing 40Gb/s fiber optic communications that the high speed of 25GHz modulation bandwidths, which directly modulates laser, Device, wherein distributed feed-back (Distributed Feedback, DFB) laser due to its high power and single longitudinal mode characteristic it is good and By extensive concern both domestic and external and research.
Distributed feedback laser has a variety of implementations at present, wherein most important scheme has two kinds:One kind is phase shift point Cloth feedback laser (Utaka K., Akiba S., Sakai K., et al., λ/4-shifted InGaAsP/InP DFB lasers[J].Quantum Electronics,IEEE Journal of,1986,22(7):1042-1051.);Another kind is Uniform grating, both ends of the surface plate respectively high-reflecting film and anti-reflection film distributed feedback laser (Razeghi M., Blondeau R., Krakowski M.,et al.Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD[J].Quantum Electronics,IEEE Journal of, 1985,21(6):507-511.)。
Traditional phase shifted distributed feedback laser is all that both ends are required for plating anti-reflection film, and the feedback of so whole laser is come From in grating.Because two end faces are not provided with the feedback of effect now, cause end face cleavage surface position relative to the not true of grating Qualitatively influence to be eliminated.As a result of traditional phase shift, the reflection peak wavelengths of grating are the bragg wavelength of grating, Simultaneously and laser chamber resonance wavelength, while also by be laser excitation wavelength.Because anti-reflection film has been plated at both ends, so The output of laser is constant power two end faces, but generally only can be coupled in optical fiber can as the external world for the output of one end Power output.This means the power output of laser have lost half.
At present, it is to improve the modulation bandwidth most effectual way of directly modulated lasers to reduce laser chamber length.Such as to realize More than 30GHz modulation bandwidth, the chamber length of laser need to be reduced to less than 200 microns.As fruit caving length be reduced to 200 microns or After shorter, the gain for threshold value of the phase shifted distributed feedback laser of λ/4 of traditional both ends of the surface plating anti-reflection film will become very high, Cleavage, the technology difficulty of plated film can be increased simultaneously, laser performance will be deteriorated.If high-reflecting film, the other end are plated using one end The method of plating anti-reflection film reduces gain for threshold value, and 30GHz bandwidth can be achieved in the case of a length of 150 microns of chamber (Kobayashi W.,Tadokoro T.,Ito T.,et al.,High-speed operation at 50Gb/s and 60-km SMF transmission with 1.3-μm InGaAlAs-based DML[C]//Semiconductor Laser Conference(ISLC),2012 23rd IEEE International.IEEE,2012:50-51.), but laser side Mould rejection ratio and yield rate will substantially reduce, that is to say, that some advantages of traditional phase shifted distributed feedback laser such as The advantages of high side mode suppression ratio, high finished product rate and excitation wavelength controllable precise, just all disappears.
To solve predicament above, a kind of relatively good solution is at the both ends of traditional phase distributed feedback laser Distributed Blatt reflective area (e.g., Simoyama T., Matsuda M., Okumura S., the et al., 50- of integrating passive Gbps direct modulation using 1.3-μm AlGaInAs MQW distribute-reflector lasers [C]//European Conference and Exhibition on Optical Communication.Optical Society of America,2012:P2.11.).The two echo areas enhance the feedback of whole laser resonant cavity thus Gain for threshold value can be reduced, while the reflection of the two echo areas is also based on grating, its reflected phase is can be by passive ripple Lead the Material growth in area and the manufacture craft in later stage accurately control, thus will not reduce the side mode suppression ratio of laser with into Product rate, so remaining able to retain the advantages of λ/4 phase shifted distributed feedback laser.But so manufacture craft becomes extremely complex, Mainly the integrated of both ends passive wave guide needs to dock regrowth techniques, and its technical difficulty is big, complex process.
Distributed feedback laser is applied in each communication system at present, is required for supervising the working condition of laser Control, in order to understand the state of whole communication system.Traditional phase shifted distributed feedback laser is required for plating anti-reflection film at both ends, Need to integrate a detector in a package, the power of non-output end is monitored.And for the phase shifted distributed feedback of short cavity Laser, if needed using the method that high-reflecting film is plated in one end, the other end plates anti-reflection film come what is realized in output end to output Light is split, to realize that the working condition to laser is monitored.Both approaches all increase the encapsulation of laser later stage Complexity and cost.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention proposes a kind of low cost, the short cavity distributed feed-back of high finished product rate swashs The method of light device (175 microns and less).The laser is divided into three parts:Active area, echo area and uptake zone, wherein having Source region and echo area two parts all contain grating;There is phase-shifted region in active area grating, active area length is less than or equal to 175 microns; In one end of the non-output of active area, echo area grating is the grating of uniform period for echo area;The uptake zone is integrated in echo area Below, the end face of one end of laser output is coated with anti-reflection film.
Described distributed feedback laser, the waveguide of described echo area and active area use identical core structure, instead The waveguide transmission floor for penetrating area is similarly active quantum-well materials.The quantum-well materials of echo area can be by the light extraction of laser itself To pellucidity, the loss of last waveguide is the internal loss of active area waveguide for pumping.
The distributed feedback laser, the length of its echo area can carry out self-defined, length according to required reflectivity Longer, reflectivity is higher, is mainly limited by waveguide internal loss.
The distributed feedback laser, the grating coefficient of coup of its echo area can be made by oneself according to required reflectivity Justice, it is not absolutely required to identical with the grating of active area, and the coefficient of coup is bigger, and reflectivity is higher.
The distributed feedback laser, its uptake zone can increase the absorption of waveguide under reverse-biased, be absorbed with reducing The reflection of area's rear end face.
The distributed feedback laser, its uptake zone can be considered as detector, for monitoring laser under reverse-biased Working condition.
The distributed feedback laser, the exterior end surface portion selection of its uptake zone use window region, or with horizontal tilt End face, come reduce reflection.
The distributed feedback laser output end plates anti-reflection film, and the reflectivity of anti-reflection film is less than 1%, to reduce reflection.
Compared with existing distributed feedback laser, the present invention introduces Bragg grating in echo area, can improve laser The feedback of device resonator, Anti-reflective coating is plated equivalent in active area end face, therefore gain for threshold value can be reduced so that laser can be with Short cavity length (200 microns and less) work is realized, the straight modulation bandwidth of laser can be so improved, laser can be improved in addition The slope efficiency of device output;Meanwhile one section of uptake zone is integrated behind echo area, the reflection of echo area rear end face is reduced, quite In plating anti-reflection film in echo area rear end face, make reflected phase caused by echo area controllable, therefore side mode suppression ratio will not be caused Reduction.Laser uses identical waveguide core layer in active area, echo area and uptake zone simultaneously, and the formation of echo area no longer needs Want complicated docking regrowth process;And only have output end face to need to plate anti-reflection film in whole manufacturing process, therefore with system Make the characteristics of difficulty is small, cost is low, high yield rate.
Brief description of the drawings
Technical scheme is further described in detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the structural representation of the distributed feedback laser of the present invention.
Embodiment
As shown in figure 1, the present invention it is a kind of low cost, high finished product rate short cavity distributed feedback laser include uptake zone 1, Echo area 2 and active area gain region 3, also known as optical gain region, active area gain region 1 from top to down include Top electrode contact layer 4, Cap rock 10, output end face increase under cap rock 5, grating layer 6, upper light limiting layer 7, quantum well layer 8, lower light limiting layer 9, waveguide in waveguide Permeable membrane 11, Top electrode contact layer 12.Echo area 2 includes cap rock 4, grating layer 5, upper light limiting layer 6, quantum in waveguide from top to down Cap rock 9 under well layer 7, lower light limiting layer 8, waveguide.The grating of gain region active area gain region part includes phase-shifted region, phase-shifted region The grating on both sides be synperiodic uniform grating.The introducing of phase-shifted region causes the bragg wavelength of grating simultaneously and resonator Resonance wavelength, while be also laser excitation wavelength.This allow to by accurately control the bragg wavelength of grating come Control the excitation wavelength of laser.Simultaneously because grating can only provide maximally effective reflection at bragg wavelength, so laser The unimodular property of device is good.
One section is introduced in one end of the non-output of laser and is uniformly distributed Bragg grating formation echo area, the volume of echo area External feedback can cause the gain for threshold value of laser to reduce, therefore can realize that short cavity is grown, while the feedback of echo area causes laser The power output increase of device output end, therefore the slope efficiency of laser can be improved.
In addition, introducing the uptake zone of one section of no-raster behind the launch site of laser, uptake zone is done as active area There is electrode, in the state of reverse-biased, the absorption of waveguide can be increased, reduce the reflection of echo area rear end face, equivalent to reflecting Area's rear end face plating anti-reflection film, makes reflected phase caused by echo area controllable, will not cause the reduction of side mode suppression ratio, increase swashs The yield rate of light device.
Bragg reflection grating, its periods lambda calculate according to below equation:
Wherein, m is grating series, and λ is the bragg wavelength corresponding to grating, and grating can produce highest at the wavelength Reflection, neffFor the effective refractive index of waveguide.
The feedback of echo area is adjusted by following two methods:
1. adjusting the length of this section of grating, in the case of certain coefficient of coup, length is longer, the equivalent reflective of echo area Rate is bigger.
2. adjusting the coefficient of coup of this section of grating, in the case where grating length is certain, the coefficient of coup is bigger, echo area Equivalent reflectivity is bigger.
Because grating is to be process by high-precision preparation method such as utilize electron beam lithography, and instead The rear end face for penetrating area integrates one section of uptake zone and can reduce end face reflection, and the phase that the grating of echo area provides feedback can be smart Really control, the feedback that the feedback and gain region grating that such echo area is provided provide can keep same-phase, this ensure that Laser can at maximum feedback wavelength lasing.
So cause laser that there are three big features simultaneously:First can be achieved on the short cavity laser of Low threshold;Second It is that the excitation wavelength of laser can be controlled accurately, exactly controls the bragg wavelength of grating;3rd be laser single mode into Product rate is high.The cleavage surface of traditional plating highly reflecting films is easily provided the reflection higher than 90%, can reduce laser threshold, but Because the position of the cleavage surface of laser sufficiently accurate can not control, thus the reflection cannot be guaranteed it is anti-with gain region grating Same-phase is penetrated, this causes the excitation wavelength of laser accurately to control, while has the problem of very serious single mode yield.
Uptake zone, echo area, the gain region of the distributed feedback laser have identical waveguiding structure, and waveguide transmission layer is all For active layer 7;Grating 6 is not present in uptake zone, in the state of reverse-biased, can increase the absorption of waveguide, reduce echo area rear end The reflection in face, make reflected phase caused by echo area controllable, and by monitor it is reverse-biased under size of current, to reflect laser Working condition;Metal electrode 4 is not present in echo area, is not injected into electric current, can not obtain gain, and simply increasing is played for laser The effect of large end face reflectivity;Therefore extra etching and regrowth techniques are not needed in technique, manufacture craft is simple, cost It is relatively low.
In the uptake zone exterior end surface portion of laser, further to reduce the influence of cleavage surface reflection, window can be used Area or the inclined cleavage surface of horizontal direction etc. so that finally obtaining cleavage surface reflection does not influence the performance of laser.
The laser output face plating anti-reflection film of distributed feedback laser, the reflectivity of anti-reflection film can be less than 1%.
It should be noted last that above embodiment is merely illustrative of the technical solution of the present invention and unrestricted, Although the present invention is described in detail with reference to preferred embodiment, it will be understood by those within the art that, can be right Technical scheme is modified or equivalent substitution, and without departing from the spirit and scope of technical solution of the present invention, its is equal It should cover among scope of the presently claimed invention.

Claims (6)

1. a kind of low cost, the short cavity distributed feedback laser of high finished product rate, it is characterised in that the laser is divided into three portions Point:Grating is all contained in active area, echo area and uptake zone, the active area and echo area;One section of phase shift be present in active area grating; In one end of the non-output of active area, echo area grating is the grating of uniform period for the echo area;The other end of echo area is institute Uptake zone is stated, uptake zone does not have grating;The end face of one end of laser output is coated with anti-reflection film.
2. low cost according to claim 1, the short cavity distributed feedback laser of high finished product rate, it is characterised in that described The waveguide of echo area, active area and uptake zone use identical core structure, the waveguide transmission layer of echo area and uptake zone is same Sample is active quantum-well materials.
3. low cost according to claim 1 or 2, the short cavity distributed feedback laser of high finished product rate, it is characterised in that institute Reflection can be provided by stating echo area, and length is longer, and reflectivity is higher.
4. low cost according to claim 1 or 2, the short cavity distributed feedback laser of high finished product rate, it is characterised in that institute Uptake zone is stated in the state of reverse-biased, the absorption of waveguide can be increased, to reduce the reflection of laser rear end face.
5. low cost according to claim 1 or 2, the short cavity distributed feedback laser of high finished product rate, it is characterised in that institute Uptake zone is stated in the state of reverse-biased, detector, the working condition for monitoring laser can be used as.
6. low cost according to claim 1, the short cavity distributed feedback laser of high finished product rate, it is characterised in that described The reflectivity of the anti-reflection film of laser output is less than 1%.
CN201720829192.6U 2017-07-10 2017-07-10 A kind of low cost, the short cavity distributed feedback laser of high finished product rate Active CN207082720U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111817132A (en) * 2019-04-12 2020-10-23 晶连股份有限公司 Improved structure of modulation laser diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111817132A (en) * 2019-04-12 2020-10-23 晶连股份有限公司 Improved structure of modulation laser diode

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Effective date of registration: 20181226

Address after: 315191 Unit 701, East Road, Jiangshan Town Science and Technology Park, Yinzhou District, Ningbo City, Zhejiang Province, 43

Patentee after: Ningbo Yuanxin Optoelectronic Technology Co., Ltd.

Address before: 430000 East Lake New Technology Development Zone, Wuhan City, Hubei Province, 439 High-tech Avenue 999 Future Science and Technology City A5 North District, 4 7-storey 701 Units

Patentee before: Aorui PEAK (Wuhan) Electronic Technology Co Ltd