CN207074987U - The circuit structure of low-noise amplifier in microwave integrated circuit - Google Patents
The circuit structure of low-noise amplifier in microwave integrated circuit Download PDFInfo
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- CN207074987U CN207074987U CN201720105344.8U CN201720105344U CN207074987U CN 207074987 U CN207074987 U CN 207074987U CN 201720105344 U CN201720105344 U CN 201720105344U CN 207074987 U CN207074987 U CN 207074987U
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Abstract
The utility model discloses a kind of circuit structure of the low-noise amplifier in microwave integrated circuit, including resistance R1, resistance R2, electric capacity Cin, electric capacity Cout, inductance L1, inductance L2, inductance L3, transistor Q1, transistor Q2 and transistor Q3, described resistance R1 one end is connected with supply voltage, the R1 other ends and transistor Q3 drain electrode are connected, and the transistor Q3 grids are connected with described resistance R2 one end again, the resistance R2 other ends again with electric capacity CinConnected with the inductance L3, the inductance L3 is connected with the transistor Q1 grids again, and the transistor Q1 source electrodes are connected with the inductance L2.While very low noise coefficient is provided, the input impedance of certain resistance is readily obtained, inductance L2 and inductance L3 realize the matching of input jointly, and transistor Q3 and transistor Q1 forms convection current mirror, electric capacity Cin and electric capacity Cout is used for radio frequency and DC-isolation, so as to have good performance.
Description
Technical field
It the utility model is related to microwave technical field, and in particular to a kind of low-noise amplifier in microwave integrated circuit
Circuit structure.
Background technology
The intermediate frequency of microwave and millimeter wave radio-frequency module is generally in 500MHz between 5GHz, while this frequency range is also current profit
With rate highest radio frequency band, the typical case of this frequency should have cdma mobile communication and WLAN etc., these systems with
In, LNA needs have good performance, so as to while enough gains are provided, reduce the shadow to system noise performance
Ring.
Utility model content
The utility model overcomes the deficiencies in the prior art, there is provided a kind of to be used to reduce the phase interaction between input and output
The circuit structure of low-noise amplifier in microwave integrated circuit.
In view of the above mentioned problem of prior art, according to one side of the present utility model, the technology to solve above-mentioned is asked
Topic, the utility model use following technical scheme：
A kind of circuit structure of low-noise amplifier in microwave integrated circuit, including resistance R1, resistance R2, electric capacity Cin、
Electric capacity Cout, inductance L1, inductance L2, inductance L3, transistor Q1, transistor Q2 and transistor Q3, described resistance R1 one end and power supply
Voltage connects, and the R1 other ends connect with transistor Q3 drain electrodes, and the transistor Q3 grids connect with described resistance R2 one end again
Connect, the resistance R2 other ends again with electric capacity CinConnected with the inductance L3, the inductance L3 again with the transistor Q1 grids
Connection, the transistor Q1 source electrodes are connected with the inductance L2, and the transistor Q1 drain electrodes connect with transistor Q2 drain electrodes,
The transistor Q2 is connected with supply voltage, the transistor Q2 source electrodes again respectively with inductance L1 and electric capacity CoutConnection, it is described
Inductance L1 is also connected with supply voltage.
In order to which the utility model is better achieved, further technical scheme is：
It is in parallel with the inductance L1 according to an embodiment of the present utility model, in addition to electric capacity C1, the electric capacity C1.
According to another embodiment of the present utility model, the transistor Q1 is field-effect transistor.
According to another embodiment of the present utility model, the transistor Q2 is field-effect transistor.
The utility model can also be：
According to another embodiment of the present utility model, the transistor Q3 is field-effect transistor.
Compared with prior art, one of the beneficial effects of the utility model are：
The circuit structure of low-noise amplifier in microwave integrated circuit of the present utility model, transistor Q2 are defeated for reducing
Interaction between entering and exporting, there is provided good isolation, the resonance point of input and output is generally adjusted to unanimously, but also may be used
Responded with providing relatively flat width with staggering certain frequency as needed, while very low noise coefficient is provided, held
It is easy to get to the input impedance of certain resistance, inductance L2 and inductance L3 realize the matching of input, transistor Q3 and transistor jointly
Q1 forms convection current mirror, and electric capacity Cin and electric capacity Cout is used for radio frequency and DC-isolation, so as to have good performance.
Brief description of the drawings
, below will be to embodiment for clearer explanation present specification embodiment or technical scheme of the prior art
Or the required accompanying drawing used is briefly described in the description of prior art, it should be apparent that, drawings in the following description are only
It is the reference to some embodiments in present specification, for those skilled in the art, is not paying creative work
In the case of, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the circuit structure of the low-noise amplifier in the microwave integrated circuit according to the utility model one embodiment
Schematic diagram.
Embodiment
The utility model is described in further detail with reference to embodiment, but embodiment of the present utility model is not
It is limited to this.
As shown in figure 1, Fig. 1 shows that the low noise in the microwave integrated circuit according to the utility model one embodiment is put
The circuit structure of big device, the circuit structure of the low-noise amplifier in a kind of microwave integrated circuit, it is characterised in that including resistance
R1, resistance R2, electric capacity Cin, electric capacity Cout, inductance L1, inductance L2, inductance L3, transistor Q1, transistor Q2 and transistor Q3, institute
State resistance R1 one end to be connected with supply voltage, the R1 other ends connect with transistor Q3 drain electrodes, and the transistor Q3 grids are again
Be connected with described resistance R2 one end, the resistance R2 other ends again with electric capacity CinConnected with the inductance L3, the inductance L3 is again
It is connected with the transistor Q1 grids, the transistor Q1 source electrodes are connected with the inductance L2, the transistor Q1 drain electrodes and institute
State transistor Q2 drain electrode connections, the transistor Q2 is connected with supply voltage, the transistor Q2 source electrodes again respectively with inductance L1
With electric capacity CoutConnection, the inductance L1 are also connected with supply voltage.Also include electric capacity C1, the electric capacity C1 and the inductance L1
It is in parallel.The transistor Q1 can be field-effect transistor.The transistor Q2 can be field-effect transistor.The transistor
Q3 can be field-effect transistor.
The circuit structure of low-noise amplifier in this microwave integrated circuit, its part designed for LNA, transistor Q1 are
Entering apparatus, produces the small-signal leakage current directly proportional to input voltage, and transistor Q2 is used to reduce between input and output
Interaction, there is provided good isolation, the resonance point of input and output is generally adjusted to unanimously, but can also be staggered as needed
Certain frequency is responded with providing relatively flat width.In order to obtain real impedance, in source electrode using the negative feedback of perception, providing very
While low noise coefficient, the input impedance of certain resistance is readily obtained, inductance L2 and inductance L3 realize input jointly
Matching, so as to have good performance.Transistor Q3 and transistor Q1 forms convection current mirror, electric capacity CinWith electric capacity CoutFor that will penetrate
Frequency and DC-isolation.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be with it is other
The difference of embodiment, identical similar portion cross-reference between each embodiment.
Although reference be made herein to the utility model is described multiple explanatory embodiments of the present utility model, still,
It should be understood that those skilled in the art can be designed that a lot of other modifications and embodiment, these modifications and embodiment
It will fall within spirit disclosed in the present application and spirit.
Claims (5)
- A kind of 1. circuit structure of the low-noise amplifier in microwave integrated circuit, it is characterised in that including resistance R1, resistance R2, Electric capacity Cin, electric capacity Cout, inductance L1, inductance L2, inductance L3, transistor Q1, transistor Q2 and transistor Q3, the resistance R1 mono- End be connected with supply voltage, and the R1 other ends and transistor Q3 drain connection, the transistor Q3 grids again with the resistance R2 one end connect, the resistance R2 other ends again with electric capacity CinConnected with the inductance L3, the inductance L3 again with the crystal Pipe Q1 grids are connected, and the transistor Q1 source electrodes are connected with the inductance L2, the transistor Q1 drain electrodes and the transistor Q2 Drain electrode connection, the transistor Q2 is connected with supply voltage, the transistor Q2 source electrodes again respectively with inductance L1 and electric capacity CoutEven Connect, the inductance L1 is also connected with supply voltage.
- 2. the circuit structure of the low-noise amplifier in microwave integrated circuit according to claim 1, it is characterised in that also Including electric capacity C1, the electric capacity C1 is in parallel with the inductance L1.
- 3. the circuit structure of the low-noise amplifier in microwave integrated circuit according to claim 1, it is characterised in that institute It is field-effect transistor to state transistor Q1.
- 4. the circuit structure of the low-noise amplifier in microwave integrated circuit according to claim 1, it is characterised in that institute It is field-effect transistor to state transistor Q2.
- 5. the circuit structure of the low-noise amplifier in microwave integrated circuit according to claim 1, it is characterised in that institute It is field-effect transistor to state transistor Q3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720105344.8U CN207074987U (en) | 2017-01-25 | 2017-01-25 | The circuit structure of low-noise amplifier in microwave integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720105344.8U CN207074987U (en) | 2017-01-25 | 2017-01-25 | The circuit structure of low-noise amplifier in microwave integrated circuit |
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| Publication Number | Publication Date |
|---|---|
| CN207074987U true CN207074987U (en) | 2018-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720105344.8U Active CN207074987U (en) | 2017-01-25 | 2017-01-25 | The circuit structure of low-noise amplifier in microwave integrated circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555970A (en) * | 2021-07-27 | 2021-10-26 | 黄石邦柯科技股份有限公司 | Wireless energy transfer device with stable output voltage |
-
2017
- 2017-01-25 CN CN201720105344.8U patent/CN207074987U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555970A (en) * | 2021-07-27 | 2021-10-26 | 黄石邦柯科技股份有限公司 | Wireless energy transfer device with stable output voltage |
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