CN207053412U - One kind is based on NP raceway groove complementation depletion type MOS FET commutation diodes - Google Patents

Abstract

The utility model discloses one kind in diode field to be based on NP raceway groove complementation depletion type MOS FET commutation diodes,Including depletion type NMOS tube M1,Depletion type PMOS M2 and low turn-on voltage Schottky diode D1,Depletion type NMOS tube M1 drain electrode connects diode D1 negative side,Depletion type PMOS M2 drain electrode connects diode D1 side of the positive electrode,Depletion type NMOS tube M1 grid connects diode D1 side of the positive electrode,Depletion type PMOS M2 grid connects diode D1 negative side,The utility model is in low-power susceptibility,High power capacity and reduction reverse leakage current etc. have superior function,By connecting NP channel depletion type metal-oxide-semiconductors at the Schottky diode D1 both ends of low turn-on voltage,So that diode D1 possess low turn-on voltage holding on the premise of also have it is higher by voltage,Preferably playing protection diode D1 prevents breakdown effect,Available in the diode in wireless charging link.

Description

One kind is based on NP raceway groove complementation depletion type MOS FET commutation diodes

Technical field

It the utility model is related to a kind of diode, more particularly to a kind of pole of rectification two based on wireless energy transfer application Pipe.

Background technology

In wireless energy transfer application, low-power input is improved frequently with the Schottky diode with low turn-on voltage Rectification high efficiency under horizontal；But due to semiconductor technology limitation, the Schottky diode with low turn-on voltage is difficult to Realize higher blanking voltage, the i.e. Schottky diode with strong low-power susceptibility, it is difficult to realize high power capacity.One In the wireless energy transfer application for needing wide Power Dynamic Range a bit, the Schottky diode with low turn-on voltage is difficult to win Appoint.Meanwhile semiconductor technology determines that the Schottky diode of low turn-on voltage has larger saturation current, i.e. reverse leakage Stream, reduce the rectification efficiency of rectifier.

Utility model content

The purpose of this utility model is to provide one kind and is based on NP raceway groove complementation depletion type MOS FET commutation diodes, has low The characteristics of power susceptibility, high power capacity and reduction reverse leakage current.

What the purpose of this utility model was realized in：One kind is based on the pole of NP raceway groove complementation depletion type MOS FET rectifications two Pipe, including the Schottky diode D1 of depletion type NMOS tube M1, depletion type PMOS M2 and low turn-on voltage, the depletion type NMOS tube M1 drain electrode connects diode D1 negative side, and the drain electrode of the depletion type PMOS M2 connects diode D1 side of the positive electrode, The grid of the depletion type NMOS tube M1 connects diode D1 side of the positive electrode, and the grid of the depletion type PMOS M2 meets diode D1 Negative side.

During utility model works, under forward biased condition, depletion type NMOS tube, depletion type PMOS simultaneously turn on, electricity Line structure is equivalent to the Schottky diode of low turn-on voltage, and diode low-power susceptibility is arranged to improve；During reverse bias, It is carried in depletion type NMOS tube source, grid voltage and is carried in depletion type gate pmos, when source voltage is more than threshold voltage, consumption Type NMOS tube, depletion type PMOS are first shut off to the greatest extent, and maintain larger reverse bias voltage to prevent Schottky at its leakage, source the two poles of the earth Diode breakdown, to improve commutation diode power capacity.Meanwhile the leakage of reverse bias depletion type NPMOS pipes, source electrode provide reversely Current path, and the leakage current of NMOS tube, PMOS is minimum, and this smaller leakage current is kept before NMOS tube, PMOS breakdown, Therefore the leakage current based on NP raceway groove complementation depletion type MOS tubes is much smaller than D1.

Compared with prior art, the beneficial effects of the utility model are, the utility model is in low-power susceptibility, Gao Gong Rate capacity and reduction reverse leakage current etc. have superior function, pass through the Schottky diode D1 two in low turn-on voltage End connection NP channel depletion type metal-oxide-semiconductors so that diode D1 also has higher on the premise of possessing low turn-on voltage holding By voltage, preferably play a part of protection diode D1.The rectification two that the utility model can be used in wireless charging link Pole pipe.

Further being limited as of the present utility model, the drain electrode of the depletion type NMOS tube M1 connects diode D1 negative pole, Output negative pole of the depletion type NMOS tube M1 source electrode as MOSFET commutation diodes, the drain electrode of the depletion type PMOS connect two The positive pole of pole pipe, the input positive pole of the source electrode of depletion type PMOS as MOSFET commutation diodes.

Further being limited as of the present utility model, the grid of the depletion type NMOS tube M1 connects diode D1 positive pole, The grid of the depletion type PMOS M2 connects diode D1 negative pole.Depletion type PMOS M2 grid be connected with D1 negative pole with Vgs, p under forward bias are provided<0, depletion type NMOS tube M1 grid are connected with D1 positive pole to provide Vgs under forward bias, n >0, ensure that M1, M2 are turned under forward bias.

Further limited as of the present utility model, the grid of the depletion type NMOS tube M1 connects depletion type PMOS M2's Source electrode, the grid of the depletion type PMOS M2 connect depletion type NMOS tube M1 source electrode.Depletion type PMOS M2 grid and consumption Type NMOS tube M1 source electrode is connected to provide Vgs under forward bias, p to the greatest extent<0, depletion type NMOS tube M1 grid and depletion type PMOS M2 source electrode is connected to provide Vgs under forward bias, n>0, ensure that M1,2 turn under forward bias.

Further limited as of the present utility model, the depletion type NMOS tube is provided with several, and string between each other It is linked together, i.e., the source electrode of upper depletion type NMOS tube connects the drain electrode of next depletion type NMOS tube, all depletion type NMOS tubes Grid link together and be followed by the input positive pole of MOSFET commutation diodes；The depletion type PMOS is provided with several, And series connection is connected together between each other, i.e., the drain electrode of upper depletion type PMOS connects the source electrode of next depletion type PMOS, owns The grid of depletion type PMOS, which links together, is followed by the output negative pole of MOSFET commutation diodes.

Brief description of the drawings

Fig. 1 is the circuit theory diagrams of embodiment 1 in the utility model.

Fig. 2 is the circuit theory diagrams of embodiment 2 in the utility model.

Fig. 3 is the circuit theory diagrams of embodiment 3 in the utility model.

Embodiment

The utility model is described further with reference to specific embodiment.

Embodiment 1

One kind as shown in Figure 1 is based on NP raceway groove complementation depletion type MOS FET commutation diodes, including depletion type NMOS tube M1, depletion type PMOS M2 and low turn-on voltage Schottky diode D1, the drain electrode of the depletion type NMOS tube M1 connect two Pole pipe D1 negative pole, the drain electrode of the depletion type PMOS M2 connect diode D1 positive pole, the grid of the depletion type NMOS tube M1 Pole connects diode D1 positive pole, and the grid of the depletion type PMOS M2 connects diode D1 negative pole, depletion type NMOS tube M1's Output negative pole of the source electrode as MOSFET commutation diodes, the source electrode of depletion type PMOS is as the defeated of MOSFET commutation diodes Enter positive pole.

According to semiconductor intellectual, the drain electrode of metal-oxide-semiconductor, source electrode provide main electrical current path.

When forward bias voltage V is carried in the NP raceway groove complementation depletion type MOS FET commutation diode both ends shown in Fig. 1, NMOS tube, the leakage of PMOS, source electrode and diode D1 carry out partial pressure to V, it is assumed that the partial pressure on D1 is：Vd1<Vd<Vth,（Its In, Vd1 is the voltage on diode D1, i.e., positive and negative voltage across poles；Vd is diode D1 cut-in voltages, for the diode of determination What D1, Vd were also to determine；Vth is the threshold voltage that metal-oxide-semiconductor is opened, for example, for depletion type NMOS, Vgs, n>-Vth When, metal-oxide-semiconductor could be opened）I.e.：

Vd1+Vsd,p+Vds,n=V

Understood according to Fig. 3 circuit connecting mode and Kirchoff s voltage are theoretical

Vgs,p=-(Vd1+Vsd,p)

Vgs,n=Vd1+Vds,n

Due to forward bias voltage V>0, current path is the source electrode of PMOS, drains and arrive D1 positive poles, finally by D1 negative poles Drain electrode, the source electrode of NMOS tube are flowed through, so Vd1>0, Vsd, p>0, Vds, n>0, i.e.,

Vgs,p<0<Vth

Vgs,n>0>-Vth

Depletion type NMOS tube, PMOS turn under forward bias voltage.

When reverse bias voltage V ' is carried in the commutation diode both ends shown in Fig. 1, reverse current path is NMOS tube D1 negative poles are arrived in source electrode, drain electrode, drain electrode, the source electrode of PMOS are finally flowed through by D1 positive poles, it is assumed that the reverse bias voltage on D1 is Vd1’<VD1 | br (VD1 | br is the reverse blanking voltages of D1), so

Vsd,n+Vds,p+Vd1’=V’

Reverse bias is the reversion of voltage direction, so voltage still meets V '>0, so Vd1 '>0, Vds, p>0, Vsd, n>0, so

Vgs,p=Vd1’+Vds,p

Vgs,n=-(Vd1’+Vsd,n)

As reverse bias voltage increases, work as Vgs, p=Vd1 '+Vds, p>Vth, Vgs, n=- (Vd1 '+Vsd, n)<-Vth When, due to M1, M2 physical characteristic are consistent and the circuit structure of its NP raceway groove complementation depletion type MOS FET commutation diode it is symmetrical Property, Vsd, n=Vds, p, so NMOS tube, PMOS simultaneously close off, NMOS tube, PMOS maintain most of reverse bias voltage To provide D1 protection, thus corresponding diagram 1 it is reverse can be expressed as by voltage (Vsd, n | br and Vds, p | br is respectively M1, M2 reverse blanking voltage)

Vbr=Vsd,n|br+VD1|br+ Vds,p|br。

Embodiment 2

One kind as shown in Figure 2 is based on NP raceway groove complementation depletion type MOS FET commutation diodes, including depletion type NMOS tube M1, depletion type PMOS M2 and low turn-on voltage Schottky diode D1, the drain electrode of the depletion type NMOS tube M1 connect two Pole pipe D1 negative pole, the drain electrode of the depletion type PMOS M2 connect diode D1 positive pole, the grid of the depletion type NMOS tube M1 Pole connects depletion type PMOS M2 source electrode, and the grid of the depletion type PMOS M2 connects depletion type NMOS tube M1 source electrode, exhausted Output negative pole of the type NMOS tube M1 source electrode as MOSFET commutation diodes, the source electrode of depletion type PMOS are whole as MOSFET Flow the input positive pole of diode.

According to semiconductor intellectual, the leakage of metal-oxide-semiconductor, source electrode provide main current path.

When forward bias voltage V is carried in commutation diode both ends, obtained according to Fig. 2 circuit connecting mode：

Vgs,p=-V<Vth

-Vth<Vgs,n=V

Depletion type NMOS tube, PMOS turn under forward bias voltage.

When reverse bias voltage V ' is carried in the commutation diode both ends shown in Fig. 2, reverse current path is NMOS tube D1 negative poles are arrived in source, drain electrode, and leakage, the source electrode of PMOS are finally flowed through by D1 positive poles, and reverse bias is the reversion of voltage direction, so Voltage still meets V '>0, so Vd1 '>0, Vds, p>0, Vsd, n>0, so

Vgs,p=V’

Vgs,n=-V’

As reverse bias voltage increases, work as Vgs, p>Vth, Vgs, n<During-Vth, NPMOS pipes M1 and M2 are closed simultaneously Close, M1, M2 maintain most of reverse bias voltage to provide D1 protection, so the reverse of corresponding diagram 3 can be with table by voltage Be shown as (Vsd, n | br and Vds, p | br is M1, M2 reverse blanking voltage respectively)

Vbr=Vsd,n|br+VD1|br+ Vds,p|br。

Fig. 1 circuit structures and the contrast of Fig. 2 circuit structures：

Because two kinds of structures are managed using depletion type NPMOS, so the on state characteristic under forward bias voltage is identical, Ensure that depletion type NMOS tube M1, PMOS M2 are normally opened i.e. under forward bias voltage；

1.M1, M2 close voltage：

Under reverse bias voltage, for Fig. 1, Vgs, p=V '-Vsd, n, Vgs, n=- (V '-Vds, p), while meet Vsd, n >0, Vds, p>0, and it is loaded directly into grid and source in M1, M2 for Fig. 2, Vgs, p=V ', Vgs, n=- V ', reverse bias voltage Pole both ends, with reverse bias voltage V ' increase, the NP raceway groove complementation depletion type MOS tube commutation diodes shown in Fig. 2 can Realized under smaller reverse bias voltage to M1,2 shut-off to provide Schottky diode D1 protection；

2. the reverse leakage current analysis of commutation diode：

According to semiconductor relevant knowledge, the Schottky diode D1 of low turn-on voltage reverse drain saturation current is very big, and one As be more than NPMOS pipes reverse drain saturation current.Above-mentioned analysis can obtain needing when M1 and M2 closings in Fig. 1 circuit structures Bigger reverse bias voltage, as reverse bias voltage V '=Vth, in Fig. 2 circuit structures M1 and M2 shut-off, and in Fig. 1 M1 and M2 still keeps it turned on and provides Schottky diode D1 current path, so for certain voltage scope in Fig. 1 be present, The reverse leakage current of corresponding commutation diode is more than the leakage current of diode shown in Fig. 2.

Embodiment 3

One kind as shown in Figure 3 is based on NP raceway groove complementation depletion type MOS FET commutation diodes, including n depletion type NMOS M11-M1n, n depletion type PMOS M21-M2n of pipe and 1 low turn-on voltage Schottky diode D1, n depletion type NMOS tube M11-M1n is cascaded, i.e., M11 source electrode is connected with M12 drain electrode, and M12 source electrode is connected with M13 drain electrode, By that analogy, output negative pole of the M1n source electrode as MOSFET commutation diodes, M11 drain electrode connect diode D1 negative pole；n Individual depletion type PMOS M21-M2n is cascaded, i.e., M21 source electrode is connected with M22 drain electrode, the leakage of M22 source electrode and M23 Extremely it is connected, by that analogy, the input positive pole of M2n source electrode as MOSFET commutation diodes, the grid between M11-M1n connects It is followed by M2n source electrode together, the grid between M21-M2n, which links together, is followed by M1n source electrode, and M11 drain electrodes connect diode D1 negative poles, M21 drain electrodes connect diode D2 positive poles.

As a kind of continuation of the structure of embodiment 2, when forward bias voltage V is carried in its both ends,

Vsd,p1+Vsd,p2+…+Vsd,pN+Vd+Vds,n1+Vds,n2+…+Vds,nN=V

So have for M2

Vgs,p1=-V

Vgs,p2=-V+Vsd,p1

Vgs,pN=-V+Vsd,p1+…+Vsd,p(N-1)

Have for M1

Vgs,n1=V

Vgs,n2=V-Vds,n1

Vgs,nN=V-Vds,n1-…-Vds,n(N-1)

The partial pressure of current path：Vsd, p1+Vsd, p2+ ...+Vsd, pN+Vd+Vds, n1+Vds, n2+ ...+Vds, nN=V, So

V>Vsd,p1+Vsd,p2+…+Vsd,Pn

V> Vds,n1+Vds,n2+…+Vds,nN

For the N under any circuit continuation, NPMOSFET meets Vgs, pN<0, Vgs, nN>0, so depletion type NPMOSFET complementary depletion type circuit continuation still meets circuit turn-on under forward biased condition.

Under the conditions of reverse bias voltage V ',

Vds,p1+Vds,p2+…+Vds,pN+Vd’+Vsd,n1+Vsd,n2+…+Vsd,nN=V’

So have for M2

Vgs,p1=V’

Vgs,p2=V-Vds,p1

Vgs,pN=V-Vds,p1-…-Vds,p(N-1)

Have for M1

Vgs,n1=-V’

Vgs,n2=-V’+Vsd,n1

Vgs,nN=-V’-Vsd,n1-…-Vsd,n(N-1)

Current path partial pressure Vds, p1+Vds, p2+ ...+Vds, pN+Vd '+Vsd, n1+Vsd, n2+ ...+Vsd, nN=V '

See that turn off at first is the NPMOSFET of outermost by the voltage relationship of above-mentioned grid, source electrode, all closed to MOSFET D1 sufficiently large reverse protection voltages will be supplied to when closing, i.e.,

Vbr=Vsd,n1|br+…+Vsd,nN|br+VD1|br+Vds,p1|br+…+ Vds,pN|br

=N*(Vsd,n|br+ Vds,p|br)+ VD1|br。

The utility model is not limited to above-described embodiment, on the basis of technical scheme disclosed in the utility model, this The technical staff in field is according to disclosed technology contents, it is not necessary to which performing creative labour can is special to some of which technology Sign makes some and replaces and deform, and these are replaced and deformed in the scope of protection of the utility model.

Claims (5)

1. one kind be based on NP raceway groove complementation depletion type MOS FET commutation diodes, it is characterised in that including depletion type NMOS tube M1, Depletion type PMOS M2 and the Schottky diode D1 with low turn-on voltage, the drain electrode of the depletion type NMOS tube M1 connect two Pole pipe D1 negative side, the drain electrode of the depletion type PMOS M2 meet diode D1 side of the positive electrode, the depletion type NMOS tube M1 Grid connect diode D1 side of the positive electrode, the grid of the depletion type PMOS M2 connects diode D1 negative side.

2. one kind according to claim 1 is based on NP raceway groove complementation depletion type MOS FET commutation diodes, it is characterised in that The drain electrode of the depletion type NMOS tube M1 connects diode D1 negative pole, and depletion type NMOS tube M1 source electrode is as the complementary consumption of NP raceway grooves The output negative pole of type MOSFET commutation diodes, the drain electrode of the depletion type PMOS connect the positive pole of diode, depletion type to the greatest extent Input positive pole of the source electrode of PMOS as NP raceway groove complementation depletion type MOS FET commutation diodes.

3. one kind according to claim 2 is based on NP raceway groove complementation depletion type MOS FET commutation diodes, it is characterised in that The grid of the depletion type NMOS tube M1 connects diode D1 positive pole, and the grid of the depletion type PMOS M2 connects diode D1's Negative pole.

4. one kind according to claim 2 is based on NP raceway groove complementation depletion type MOS FET commutation diodes, it is characterised in that The grid of the depletion type NMOS tube M1 connects depletion type PMOS M2 source electrode, and the grid of the depletion type PMOS M2, which connects, to be exhausted Type NMOS tube M1 source electrode.

5. one kind according to claim 2 is based on NP raceway groove complementation depletion type MOS FET commutation diodes, it is characterised in that The depletion type NMOS tube is provided with several, and series connection is connected together between each other, i.e., the source electrode of upper depletion type NMOS tube The drain electrode of next depletion type NMOS tube is connect, the grid of all depletion type NMOS tubes, which links together, is followed by MOSFET commutation diodes Input positive pole；The depletion type PMOS is provided with several, and series connection is connected together between each other, i.e., a upper depletion type The drain electrode of PMOS connects the source electrode of next depletion type PMOS, and the grid of all depletion type PMOSs, which links together, to be followed by The output negative pole of MOSFET commutation diodes.