CN207053382U - A kind of atomizing piece control circuit - Google Patents
A kind of atomizing piece control circuit Download PDFInfo
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- CN207053382U CN207053382U CN201721073133.7U CN201721073133U CN207053382U CN 207053382 U CN207053382 U CN 207053382U CN 201721073133 U CN201721073133 U CN 201721073133U CN 207053382 U CN207053382 U CN 207053382U
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Abstract
The utility model belongs to atomizing piece actuation techniques field, more particularly, to a kind of atomizing piece control circuit.The atomizing piece control circuit is controlled using single-chip microcomputer, and single-chip microcomputer control IC circuits are boosted, and IC circuits produce the waveform that Vpp is 80V, pass through the drive waveform atomizing piece normal work after boosting twice.
Description
Technical field
The utility model belongs to atomizing piece actuation techniques field, more particularly, to a kind of atomizing piece control circuit.
Background technology
Atomizing piece, using electronics high frequency oscillation, (frequency of oscillation is 1.7MHz or 2.4MHz to ultrasonic ultrasonic delay line memory, more than people's
Audibility range, the electronic absolutely not injure to human body and animal), by the high-frequency resonant of ceramic atomizing piece, by aqueous water
Minor structure is broken up and produces the elegant water smoke of nature, is not required to heat or add any chemical reagents.Compared with heating atomization mode,
Energy saving 90%.Substantial amounts of anion will be discharged in atomization process in addition, itself and the smog, the dust etc. that are floated in air
Electrostatic reaction is produced, makes its precipitation, while can also effectively remove the harmful substances such as formaldehyde, carbon monoxide, bacterium, obtains air
To purification, the generation of disease is reduced.
Referenced patent document CN106100432A discloses a kind of piezoelectric ceramic atomizer patch drive circuit, including atomizing piece and
Circuit occurs for high-frequency impulse, and the high-frequency impulse occurs circuit and opened including power output end, transformer, first switch pipe, second
Pipe and switch controlled circuit are closed, the transformer includes the first primary side winding, the second primary side winding, the first secondary being engaged
Winding and iron core, first vice-side winding is in parallel with atomizing piece, after first primary side winding and the series connection of first switch pipe simultaneously
It is associated on power output end, is connected in parallel on after second primary side winding and the series connection of second switch pipe on power output end, it is described to open
Close the first control signal of pipe control circuit output and the second control signal, first control signal inputted to first switch pipe,
Second control signal is inputted to second switch pipe.The disclosed atomization piece driving circuit of the referenced patent document, passes through switch
The break-make of management and control circuit controling switch pipe, realizes the control to pulse frequency, is not fed back for pulse amplitude, the reality
Apply example and use opened loop control, when supply voltage is unstable, be not adjusted, atomizing piece may be caused damage.
Utility model content
Part in view of the shortcomings of the prior art, the utility model proposes a kind of atomizing piece control circuit, the atomization
Piece control circuit is controlled using single-chip microcomputer, and single-chip microcomputer control IC circuits are boosted, and IC circuits after boosting twice, production
The waveform that raw Vpp is 80V, passes through the drive waveform atomizing piece normal work.
The utility model adopts the following technical scheme that：
A kind of atomizing piece control circuit, it includes single-chip microprocessor MCU, electrostatic protection element U2, the 4th resistance R4, the 5th resistance
R5, the 6th resistance R6, the first FET Q1, the 9th resistance R9, the 3rd electric capacity C3, the first inductance CD1, the second diode D2,
4th electric capacity C4, the second inductance CD2, the 15th resistance R15, the 17th resistance R17, the 18th resistance R18, the 9th electric capacity C9,
3rd FET Q3, the 7th electric capacity C7；
The 4th pin of the electrostatic protection element U2 connects the first port of single-chip microprocessor MCU, single-chip microcomputer through the 4th resistance R4
MCU second port connects the first FET Q1 grid through the 9th resistance R9, and the first FET Q1 drain electrode meets power supply BAT
+, source electrode connects electrostatic protection element U2 the 6th pin, and electrostatic protection element U2 the 6th pin is grounded through the 3rd electric capacity C3, quiet
The first inductance CD1, electrostatic protection element U2 the first pin are concatenated between electric protection element U2 the 6th pin and the first pin
Second pin, electrostatic protection element U2 second pin ground connection, electrostatic protection element are connect through the second diode D2, the 4th electric capacity C4
U2 the 3rd pin is grounded through the 5th resistance R5, a 6th resistance R6 termination electrostatic protection element U2 the 3rd pin, another
Terminate the 4th electric capacity C4 and the second diode D2 common port；
3rd pin of single-chip microprocessor MCU connects the 3rd FET Q3 grid, the 3rd FET through the 15th resistance R15
Q3 source electrode is grounded through the 18th resistance R18, and the 3rd FET Q3 drain electrode meets the 4th electric capacity C4 and through the second inductance CD2
Two diode D2 common port, the 3rd FET Q3 drain electrode connect atomizing piece through the 7th electric capacity C7, and the of the single-chip microprocessor MCU
Four pins are grounded through the 9th electric capacity C9, and the 4th pin of single-chip microprocessor MCU connects the 3rd FET Q3 source through the 17th resistance R17
Pole.
The technical program further optimizes, and the single-chip microprocessor MCU is 51 series monolithics.
The technical program further optimizes, the model LC3312 of the electrostatic protection element U2.
The technical program further optimizes, and the first FET Q1 is p-type FET.
The utility model has the advantages that relative to prior art：1. the utility model is using single-chip microcomputer to IC
Circuit is controlled so that after IC circuits often boost twice, reaches target voltage values；2. the utility model uses single-chip microcomputer control
The open circuit of IC circuits processed and path, realize intelligent control；3. the utility model single-chip microcomputer is carried out to the magnitude of voltage after secondary booster
Sampling, the magnitude of voltage after boosting is understood in real time, realize accurate control.
Brief description of the drawings
Fig. 1 is the schematic diagram of atomizing piece control circuit.
Embodiment
To further illustrate each embodiment, the utility model is provided with accompanying drawing.These accompanying drawings are in the utility model discloses
A part for appearance, it can coordinate the associated description of specification to explain the running of embodiment original mainly to illustrate embodiment
Reason.Cooperation refers to these contents, and those of ordinary skill in the art will be understood that other possible embodiments and this practicality are new
The advantages of type.Component in figure is not necessarily to scale, and similar element numbers are conventionally used to indicate similar component.
The utility model is further illustrated in conjunction with the drawings and specific embodiments.
As shown in fig.1, the schematic diagram of the atomizing piece control circuit of the utility model preferably embodiment.It includes monolithic
Machine MCU, electrostatic protection element U2, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the first FET Q1, the 9th resistance
R9, the 3rd electric capacity C3, the first inductance CD1, the second diode D2, the 4th electric capacity C4, the second inductance CD2, the 15th resistance R15,
17th resistance R17, the 18th resistance R18, the 9th electric capacity C9, the 3rd FET Q3, the 7th electric capacity C7；
The 4th pin of the electrostatic protection element U2 connects the first port of single-chip microprocessor MCU, single-chip microcomputer through the 4th resistance R4
MCU second port connects the first FET Q1 grid through the 9th resistance R9, and the first FET Q1 drain electrode meets power supply BAT
+, source electrode connects electrostatic protection element U2 the 6th pin, and electrostatic protection element U2 the 6th pin is grounded through the 3rd electric capacity C3, quiet
The first inductance CD1, electrostatic protection element U2 the first pin are concatenated between electric protection element U2 the 6th pin and the first pin
Second pin, electrostatic protection element U2 second pin ground connection, electrostatic protection element are connect through the second diode D2, the 4th electric capacity C4
U2 the 3rd pin is grounded through the 5th resistance R5, a 6th resistance R6 termination electrostatic protection element U2 the 3rd pin, another
Terminate the 4th electric capacity C4 and the second diode D2 common port；
3rd pin of single-chip microprocessor MCU connects the 3rd FET Q3 grid, the 3rd FET through the 15th resistance R15
Q3 source electrode is grounded through the 18th resistance R18, and the 3rd FET Q3 drain electrode meets the 4th electric capacity C4 and through the second inductance CD2
Two diode D2 common port, the 3rd FET Q3 drain electrode connect atomizing piece through the 7th electric capacity C7, and the of the single-chip microprocessor MCU
Four pins are grounded through the 9th electric capacity C9, and the 4th pin of single-chip microprocessor MCU connects the 3rd FET Q3 source through the 17th resistance R17
Pole.
It should be noted that the single-chip microprocessor MCU model AT89S51 of the embodiment.AT89S51 is a low-power consumption, high
8 single-chip microcomputers of performance CMOS, what piece included 4k Bytes ISP (In-system programmable) can repeatedly erasable 1000
Secondary Flash read-only program memories, device are manufactured using high density, the nonvolatile storage technologies of atmel corp, compatibility mark
Quasi- MCS-51 instruction systems and 80C51 pin configurations, general 8 central processing units and ISP Flash storage is integrated with chip
Unit, AT89S51 are used widely in numerous embedded Control application systems.
In addition, the model LC3312 of the electrostatic protection element U2.The first FET Q1 is p-type field-effect
Pipe.The CN2 interfaces one of the embodiment terminate atomizing piece, one end ground connection.
Electrostatic protection element U2 and other electronic components composition IC circuits.
The first port of single-chip microprocessor MCU carries out the control of boosting IC circuits, the 5th resistance R5 and the 6th resistance R6 to boosting
IC boost values are configured, boosting IC carry out once boosting reach 16V after, the 3rd port control circuit of single-chip microprocessor MCU is to electricity
Pressure carries out secondary booster, and after secondary booster, producing VPP in CN2, (Vpp refers to the minimum of exchange or pulse signal to peak
Voltage, also referred to as peak-to-peak value.) be 80V waveform, drive atomizing piece normal work.4th port of single-chip microprocessor MCU, to secondary
The magnitude of voltage of boosting is sampled.The second port of single-chip microprocessor MCU, open circuit and path of the control battery to boosting IC.
Although specifically showing and describing the utility model with reference to preferred embodiment, those skilled in the art should
This is understood, is not departing from the spirit and scope of the present utility model that appended claims are limited, in form and details
On the utility model can be made a variety of changes, be the scope of protection of the utility model.
Claims (4)
- A kind of 1. atomizing piece control circuit, it is characterised in that：It includes single-chip microprocessor MCU, electrostatic protection element U2, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the first FET Q1, the 9th resistance R9, the 3rd electric capacity C3, the first inductance CD1, Two diode D2, the 4th electric capacity C4, the second inductance CD2, the 15th resistance R15, the 17th resistance R17, the 18th resistance R18, 9th electric capacity C9, the 3rd FET Q3, the 7th electric capacity C7；The 4th pin of the electrostatic protection element U2 connects the first port of single-chip microprocessor MCU through the 4th resistance R4, single-chip microprocessor MCU Second port connects the first FET Q1 grid through the 9th resistance R9, and the first FET Q1 drain electrode connects power supply BAT+, source Pole connects electrostatic protection element U2 the 6th pin, and electrostatic protection element U2 the 6th pin is grounded through the 3rd electric capacity C3, and electrostatic is protected The first inductance CD1 is concatenated between protection element U2 the 6th pin and the first pin, electrostatic protection element U2 the first pin is through Two diode D2, the 4th electric capacity C4 connect second pin, and electrostatic protection element U2 second pin is grounded, electrostatic protection element U2's 3rd pin is grounded through the 5th resistance R5, a 6th resistance R6 termination electrostatic protection element U2 the 3rd pin, another termination 4th electric capacity C4 and the second diode D2 common port；3rd pin of single-chip microprocessor MCU connects the 3rd FET Q3 grid through the 15th resistance R15, the 3rd FET Q3's Source electrode is grounded through the 18th resistance R18, and the 3rd FET Q3 drain electrode meets the 4th electric capacity C4 and the two or two through the second inductance CD2 Pole pipe D2 common port, the 3rd FET Q3 drain electrode connect atomizing piece through the 7th electric capacity C7, and the 4th of the single-chip microprocessor MCU draws Pin is grounded through the 9th electric capacity C9, and the 4th pin of single-chip microprocessor MCU connects the 3rd FET Q3 source electrode through the 17th resistance R17.
- 2. atomizing piece control circuit as claimed in claim 1, it is characterised in that：The single-chip microprocessor MCU is 51 series monolithics.
- 3. atomizing piece control circuit as claimed in claim 1, it is characterised in that：The model of the electrostatic protection element U2 LC3312。
- 4. atomizing piece control circuit as claimed in claim 1, it is characterised in that：The first FET Q1 is imitated for p-type field Ying Guan.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721073133.7U CN207053382U (en) | 2017-08-25 | 2017-08-25 | A kind of atomizing piece control circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721073133.7U CN207053382U (en) | 2017-08-25 | 2017-08-25 | A kind of atomizing piece control circuit |
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| Publication Number | Publication Date |
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| CN207053382U true CN207053382U (en) | 2018-02-27 |
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| CN201721073133.7U Active CN207053382U (en) | 2017-08-25 | 2017-08-25 | A kind of atomizing piece control circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110279514A (en) * | 2019-07-31 | 2019-09-27 | 郑州福盛康眼科医疗技术有限公司 | A kind of eye atomizer and its control circuit |
-
2017
- 2017-08-25 CN CN201721073133.7U patent/CN207053382U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110279514A (en) * | 2019-07-31 | 2019-09-27 | 郑州福盛康眼科医疗技术有限公司 | A kind of eye atomizer and its control circuit |
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