CN207052609U

CN207052609U - A kind of GaN high electron mobility transistor

Info

Publication number: CN207052609U
Application number: CN201721087795.XU
Authority: CN
Inventors: 孔欣
Original assignee: Chengdu Hiwafer Technology Co Ltd
Current assignee: Chengdu Hiwafer Technology Co Ltd
Priority date: 2017-08-29
Filing date: 2017-08-29
Publication date: 2018-02-27
Anticipated expiration: 2027-08-29

Abstract

The utility model discloses a kind of GaN high electron mobility transistor, including epitaxy of gallium nitride structure, source electrode, drain electrode and two gate electrodes；Described source electrode and drain electrode form Ohm connection with epitaxy of gallium nitride structure respectively, two described gate electrodes are respectively positioned between source electrode and drain electrode, two gate electrodes include bus and the multiple branch lines being connected with bus, described bus forms Schottky contacts with epitaxy of gallium nitride structure, the surrounding of branch line is wrapped up using medium and goed deep into the channel layer of epitaxy of gallium nitride structure, while the branch line of two gate electrodes is arranged in interdigitated.The utility model has additionally introduced this poor Control factors of grid voltage again on the basis of single grid voltage regulates and controls channel carrier so that grid are more abundant, more efficient to the control measures of channel carrier, are advantageously implemented device and more flexibly work.

Description

A kind of GaN high electron mobility transistor

Technical field

It the utility model is related to compound semiconductor device technical field, a kind of GaN high electron mobility transistor.

Background technology

Third generation semiconductor gallium nitride obtains educational circles and industry because disruptive field intensity is high, anti-radiation performance is good, high temperature resistant works More and more pay close attention on boundary.At present, GaN HEMTs（HEMT）Because of its distinctive high electron mobility, high by two Dimensional electron gas surface density, high breakdown electric field, high-power output density, it is considered as the head of RF/Microwave power amplifier of future generation Selecting technology.

GaN HEMT are three terminal devices, are divided into three grid, source, leakage electrodes.Carrier is under the driving of leakage pressure by source electricity Pole transports to drain electrode, forms leakage current, and grid is the core means for regulating and controlling leakage current.Prior art is only by grid Pole tension goes influence channel carrier to transport, and device output current control methods are single.

Utility model content

The purpose of this utility model is overcome the deficiencies in the prior art, there is provided a kind of GaN high electron mobility crystal Pipe.

The purpose of this utility model is achieved through the following technical solutions：A kind of GaN high electron mobility crystal Pipe, including epitaxy of gallium nitride structure, source electrode, drain electrode and two gate electrodes；Described source electrode and drain electrode respectively with nitrogen Change gallium epitaxial structure and form Ohm connection, described two gate electrodes are respectively positioned between source electrode and drain electrode, two gate electrodes Including bus and the multiple branch lines being connected with bus, described bus forms Schottky contacts with epitaxy of gallium nitride structure, The surrounding of branch line is wrapped up using medium and goed deep into the channel layer of epitaxy of gallium nitride structure, while the branch line of two gate electrodes Arranged in interdigitated.

Further, described epitaxy of gallium nitride structure includes AlN nucleating layers, GaN cushions and ditch successively from bottom to up Channel layer, AlN insert layers, AlGaN potential barrier and GaN cap.

Further, a kind of described GaN high electron mobility transistor also includes being located at epitaxy of gallium nitride structure bottom The substrate in portion.

Further, described medium is SiN media.

The beneficial effects of the utility model are：The utility model makes two gate electrodes, each grid between source-drain electrode Electrode is formed by bus and branch line, and branch's line graph of two gate electrodes is arranged in interdigitated respectively, and is indulged in device Go deep on deep direction to channel layer.Pass through the cross-over design of two grid branch lines so that adjacent, belong to different grid The branch line of pole forms many capacity plate antennas, at this time if larger voltage difference be present between two grids, can drive ditch Road carrier moves between two capacitor plates being made up of branch line, forms electric capacity " discharge and recharge " process so that in raceway groove Normally it is split from source to the carrier of leakage motion.Voltage difference between two gate electrodes is bigger, the raceway groove current-carrying being split Sub- ratio is higher, in this way, just having additionally introduced this poor regulation and control of grid voltage again on the basis of single grid voltage regulates and controls channel carrier Factor so that grid are more abundant, more efficient to the control measures of channel carrier, are advantageously implemented the more flexible work of device Make.

Brief description of the drawings

Fig. 1 is structural plan schematic diagram of the present utility model；

It is the cross-sectional view in A-A ' faces in Fig. 1 shown in Fig. 2；

It is the cross-sectional view in B-B ' faces in Fig. 1 shown in Fig. 3；

In figure, 1- epitaxy of gallium nitride structures, 2- source electrodes, 3- drain electrodes, 4- first gate electrodes, 4-1- first gate electrodes are total Line, 4-2- first gate electrode branch lines, the gate electrodes of 5- second, 5-1- second gate electrode bus, 5-2- second gate electrode branches lines, 6- media, 7- area of isolation, 8-GaN cap layers；9-AlGaN barrier layers；10-AlN insert layers；11-GaN is buffered and channel layer；12- AlN nucleating layers；13- substrates.

Embodiment

The technical solution of the utility model is described in further detail below in conjunction with the accompanying drawings：

In order to introduce the second variable of regulation and control leakage current, a kind of new GaN HEMT knots of the present embodiment design outside grid voltage Structure：Device has two grids, and each grid is divided into bus and branch line, and the branch line of two grid is arranged in interdigitated, and And be deep into below gallium nitride channel layer, SiN media between branch line metal and epitaxial structure be present.Adjacent Liang Ge grid branch Line belongs to different grids, and a typical capacity plate antenna structure is formed with SiN media therebetween and epitaxial structure, once two grid Between a voltage difference be present, will perpendicular to capacitor plate direction produce electric field, induce channel carrier it is anti-along electric field Direction is moved, and to transport direction just vertical for the direction of an electric field and normal channel carrier, so can be to channel carrier Generation shunting action normally is transported, so as to reach the purpose of regulation and control leakage current, namely the influence raceway groove realized outside grid voltage carries The second variable that stream transports：Voltage difference between two grid.

Specifically, the GaN high electron mobility transistor of the present embodiment as shown in Figure 1, Figure 2 and Figure 3, including nitridation Gallium epitaxial structure 1, source electrode 2, drain electrode 3, the gate electrode 5 of first gate electrode 4 and second；Described source electrode 2 and drain electrode 3 is divided Ohm connection is not formed with epitaxy of gallium nitride structure 1, the gate electrode 5 of first gate electrode 4 and second is respectively positioned on source electrode 2 and drain electrode Between 3, first gate electrode 4 includes first gate electrode bus 4-1 and the multiple first grids being connected with first gate electrode bus 4-1 electricity Pole branch line 4-2, corresponding, the second gate electrode 5 includes second gate electrode bus 5-1 and is connected with second gate electrode bus 5-1 Multiple second gate electrode branches line 5-2, first gate electrode bus 4-1 and second gate electrode bus 5-1 respectively with outside gallium nitride Prolong structure 1 and form Schottky contacts, first gate electrode branch line 4-2 and second gate electrode branches line 5-2 surrounding use medium 6 Wrap up and go deep into the channel layer of epitaxy of gallium nitride structure 1, while first gate electrode branch line 4-2 and second gate electrode branches line 5-2 arranges in interdigitated.In the present embodiment, medium 6 is SiN media, and medium 6 is used to avoiding gate electrode and source, drain electrode straight Connected channel layer conducting.

Specifically, Fig. 1 is the planar structure schematic diagram of the GaN high electron mobility transistor of the present embodiment.Wherein, 2 For source electrode, 3 be drain electrode, and 4 be first gate electrode, and 4-1 is first gate electrode bus, and 4-2 is first gate electrode branch line, 5 For the second gate electrode, 5-1 is second gate electrode bus, and 5-2 is second gate electrode branches line.Area of isolation 7 refers to dotted line frame Inside, it is a device for possessing complete function within the region.

Fig. 2 show the cross-sectional view in A-A ' faces in Fig. 1.Wherein 2 be source electrode, and 3 be drain electrode, and 4 be the first grid Electrode, 5 be the second gate electrode, and 6 be SiN media；8 ~ 12 are combined as epitaxy of gallium nitride structure 1, wherein 8 be GaN cap；9 are AlGaN potential barrier；10 be AlN insert layers；11 be GaN bufferings and channel layer；12 be AlN nucleating layers；13 be substrate.

Fig. 3 show the cross-sectional view in B-B ' faces in Fig. 1, and the section vertically downward, reflects first along grid branch line Interleaved state between gate electrode branch line 4-2 and second gate electrode branches line 5-2.Wherein, 4-2 is first gate electrode branch Line, 5-2 are second gate electrode branches line；6 be SiN media；8 ~ 12 are combined as epitaxy of gallium nitride structure 1, wherein 8 be GaN cap, 9 be AlGaN potential barrier, and 10 be AlN insert layers, and 11 be that GaN is buffered and channel layer, GaN bufferings and channel layer 11 have partial zones Domain covers SiN media 6 again after being etched away；12 be AlN nucleating layers；13 be substrate.It can see from shown in Fig. 3, it is adjacent First gate electrode branch line 4-2 and second gate electrode branches line 5-2 and SiN media 6 between the two and epitaxy of gallium nitride structure 1 Capacity plate antenna structure is formed, applies a certain size electricity on first gate electrode branch line 4-2 and second gate electrode branches line 5-2 Pressure difference, can be to adjust the migratory direction of channel carrier so that under normal circumstances by source electrode 2 in a manner of capacitor charge and discharge The motion that the carrier moved to drain electrode 3 is perpendicularly to the direction, and then adjust source-drain current.

The specifically used mode of the present embodiment is as described below：

Source electrode 2 and drain electrode 3 are originated into electrode terminal and Zhongdao electrode terminal as carrier transport, and applied Add certain voltage, wherein source electrode 2 is grounded, and drain electrode 3 applies the positive voltage no more than 20V；

Apply a certain size voltage difference between two gate electrodes, voltage difference scope is -10V-+10V, and driving raceway groove carries Stream moves between two capacitor plates being made up of branch line so that is moved under normal circumstances from source electrode 2 to drain electrode 3 Carrier be split, that is, the motion being perpendicularly to the direction, so adjust source-drain current.

The utility model is described by embodiment, but the utility model is not construed as limiting, with reference to this practicality New description, other changes of the disclosed embodiments, is such as readily apparent that for the professional person of this area, such Change should belong within the scope of the utility model claims restriction.

Claims

A kind of 1. GaN high electron mobility transistor, it is characterised in that：Including epitaxy of gallium nitride structure, source electrode, electric leakage Pole and two gate electrodes；Described source electrode and drain electrode form Ohm connection with epitaxy of gallium nitride structure respectively, and described two Individual gate electrode is respectively positioned between source electrode and drain electrode, and two gate electrodes include bus and the multiple branches being connected with bus Line, described bus and epitaxy of gallium nitride structure form Schottky contacts, the surrounding of branch line wrapped up using medium and go deep into The channel layer of epitaxy of gallium nitride structure, while the branch line of two gate electrodes is arranged in interdigitated.
A kind of 2. GaN high electron mobility transistor according to claim 1, it is characterised in that：Described gallium nitride Epitaxial structure from bottom to up successively include AlN nucleating layers, GaN cushions and channel layer, AlN insert layers, AlGaN potential barrier and GaN cap.
A kind of 3. GaN high electron mobility transistor according to claim 1, it is characterised in that：Also include being located at nitrogen Change the substrate of gallium epitaxial structure bottom.
A kind of 4. GaN high electron mobility transistor according to claim 1, it is characterised in that：Described medium is SiN media.