CN207051430U - A kind of hand-held semiconductor minority carrier lifetime tester - Google Patents

A kind of hand-held semiconductor minority carrier lifetime tester Download PDF

Info

Publication number
CN207051430U
CN207051430U CN201720857295.3U CN201720857295U CN207051430U CN 207051430 U CN207051430 U CN 207051430U CN 201720857295 U CN201720857295 U CN 201720857295U CN 207051430 U CN207051430 U CN 207051430U
Authority
CN
China
Prior art keywords
resistance
pin
electric capacity
chip
inductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201720857295.3U
Other languages
Chinese (zh)
Inventor
李�杰
刘世伟
于友
石坚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Chenyu Rare Material Technology Co Ltd
Original Assignee
Shandong Chenyu Rare Material Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Chenyu Rare Material Technology Co Ltd filed Critical Shandong Chenyu Rare Material Technology Co Ltd
Priority to CN201720857295.3U priority Critical patent/CN207051430U/en
Application granted granted Critical
Publication of CN207051430U publication Critical patent/CN207051430U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The utility model provides a kind of hand-held semiconductor minority carrier lifetime tester, including：Instrument body, the power line being connected respectively with instrument body and detection device；Instrument body is provided with display screen, power switch button, reset switch button, laser switch button, laser upshift button, laser downshift button, brightness of display screen adjusting knob；Infrared laser, mainboard and the power subsystem for being powered to tester inner member are provided with inside instrument body；Mainboard is provided with single-chip microcomputer, constant-current source gear selecting module, AD acquisition modules, laser driving circuit, program compiling circuit；Probe is pressed in silicon material with certain dynamics during use, probe spacing 0.5MM, laser is opened after waiting stabilization, is radiated between two probes, and laser is closed, gathered data while closing laser, and a test period completes.By output data presentation of information to display screen, personnel easy to operation, which watch, obtains information.

Description

A kind of hand-held semiconductor minority carrier lifetime tester
Technical field
It the utility model is related to semiconductor minority carrier lifetime field, more particularly to a kind of hand-held semiconductor minority carrier life time Tester.
Background technology
Minority carrier lifetime (abbreviation minority carrier life time) be in crystal non-equilibrium minority carrier by producing to compound presence Average time interval, decay to the time needed for the 1/e (e=2.718) of initial value equal to non-equilibrium minority carrier concentration, Also known as minority carrier lifetime, body life time, unit are μ s.Minority carrier life time is an important parameter of semi-conducting material, and it is half-and-half The performance of conductor device, the efficiency of solar cell have important influence.The minority carrier life time of semi-conducting material is to assess partly to lead One of important parameter of body material.The foundation distinguished as technique adjustment and material, the accurate measurement of minority carrier life time have weight The practical significance wanted.
At present, existing hand-held semiconductor minority carrier lifetime tester is bench device, by host computer (calculating) and bottom A set of test system of machine (test) composition, whole system need to be fixed and measured indoors, can not directly apply to semiconductor Workshop is measured in real time, and measurement process is complicated, needs professional to operate host computer to measure, complex for operation step, Efficiency is low.
The content of the invention
In order to overcome above-mentioned deficiency of the prior art, the utility model provides a kind of hand-held semiconductor minority carrier life time and surveyed Instrument is tried, including：Instrument body, the power line being connected respectively with instrument body and detection device；
Instrument body is provided with display screen, power switch button, reset switch button, laser switch button, laser Upshift button, laser downshift button, brightness of display screen adjusting knob；
Infrared laser, mainboard and the power supply list for being powered to tester inner member are provided with inside instrument body Member；
Mainboard is provided with single-chip microcomputer, constant-current source gear selecting module, AD acquisition modules, laser driving circuit, program compiling electricity Road；
Reset switch button, laser switch button, display screen, constant-current source gear selecting module, program compiling circuit respectively with Single-chip microcomputer connects；
The data message of detection detected element, and by AD acquisition modules by the data information transfer of collection extremely Single-chip microcomputer；
Infrared laser is connected by laser driving circuit with single-chip microcomputer, and laser driving circuit is used to make single-chip microcomputer root According to the input instruction of laser switch button, infrared laser start and stop are controlled；
Laser upshift button, laser downshift button is connected with constant-current source gear selecting module respectively, for passing through user Laser upshift button or laser downshift button regulation stall；
Power switch button is connected with power subsystem, and power switch button controls the break-make of power subsystem；
Brightness of display screen adjusting knob is connected with display screen, and brightness of display screen adjusting knob adjusts the brightness of display screen.
Preferably, instrument body includes：Hand grip portion and viewing area；
Hand grip portion outer wrap has rubber layer, and two sides of hand grip portion are provided with anti-slip rubber projection；
The top of instrument body is provided with the jack for being adapted and being connected with detection device.
Preferably, constant-current source gear selecting module includes：Constant-current source generation circuit, inductance L1, resistance R1, resistance R2, resistance R3, Resistance R4, resistance R5, resistance R6, electric wire connecting junction U3, transport and placing device LM1, FET Q1, gear selecting switch；
Inductance L1 first terminates+5v power supplys, the ends of inductance L1 second difference connecting resistance R1 first ends, No. eight pin of transport and placing device LM1 Connected with power supply VCC-A ends, the ends of resistance R1 second are connected with No. tri- pin of transport and placing device LM1 and electric wire connecting junction U3 No.1 pin respectively, amplifier No. tetra- pin of device LM1, No. tri- pin of electric wire connecting junction U3, the ends of resistance R2 second, the ends of resistance R3 second, the ends of resistance R4 second, resistance R5 second End, the ends of resistance R6 second are grounded respectively, No. bis- pin of transport and placing device LM1 S poles with FET Q1 respectively, the GDK1 of gear selecting switch, The GDK2 of gear selecting switch, the GDK3 of gear selecting switch, the GDK4 connections of gear selecting switch, the GDK11 of gear selecting switch, gear selecting switch GDK22, the GDK33 of gear selecting switch, the GDK44 of gear selecting switch respectively with resistance R3 first ends, resistance R4 first ends, resistance R5 the One end, the connection of resistance R6 first ends；Transport and placing device LM1 No.1s pin connection FET Q1 G poles and resistance R2 first ends.
Preferably, circuit, which occurs, for constant-current source includes：Photoelectric relay U1, photoelectric relay U2, resistance R7, resistance R8, electricity Hinder R9, resistance R10；
The pin of photoelectric relay U1 mono- are single by resistance R8 connections by resistance R7 connection single-chip microcomputers, the pin of photoelectric relay U1 tri- Piece machine, the pin of photoelectric relay U2 mono- pass through resistance R10 connection monolithics by resistance R9 connection single-chip microcomputers, the pin of photoelectric relay U2 tri- Machine, the pin of photoelectric relay U1 bis-, four pin, the pin of photoelectric relay U2 bis-, four pin are grounded respectively；The pin selecting shelves of photoelectric relay U1 five The GDK33 of the pin selecting gear switch of the GDK3 of switch, photoelectric relay U1 six, photoelectric relay U1 seven pin selecting gear switch GDK4, the GDK44 of photoelectric relay U1 octal selecting gear switch, the GDK1 of the pin selecting gear switch of photoelectric relay U2 five, photoelectricity The GDK2, photoelectric relay U2 eight of the GDK11 of the pin selecting gear switch of relay U2 six, photoelectric relay U2 seven pin selecting gear switch AQY212 is respectively adopted in the GDK22 of pin selecting gear switch, photoelectric relay U1, photoelectric relay U2.
Preferably, laser driving circuit includes：Inductance L2, inductance L3, resistance R11, resistance R12, resistance R13, three poles Pipe Q3, FET Q2；
Resistance R11 first ends connect single-chip microcomputer, and resistance R11 second terminates triode Q3 base stages, triode Q3 colelctor electrodes difference Connecting resistance R12 first ends, resistance R13 first ends, the ends of resistance R12 second connect+12v power supplys, the ends of resistance R13 second by inductance L2 FET Q2G ends are connect, FET Q2D ends connect+12v power supplys, FET Q2S termination infrared lasers by inductance L3 LED1_A, infrared laser LED1_B are grounded, triode Q3 grounded emitters.
Preferably, in addition to：Two voltage-multiplying circuits, two voltage-multiplying circuits supply hand-held semiconductor minority carrier life time for producing 22V Tester inner member uses；
Two voltage-multiplying circuits include：Electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, multiplication of voltage chip U4, diode D1, diode D2, resistance R14, resistance R15；
The pin of multiplication of voltage chip U4 mono-, electric capacity C3 first ends, electric capacity C5 first ends are grounded respectively, the pin of multiplication of voltage chip U4 five and electric capacity The ends of C3 second connect；The pin of multiplication of voltage chip U4 bis- connect with six pin, the ends of electric capacity C5 second with resistance R14 first ends respectively；Multiplication of voltage core The pin of piece U4 tetra-, octal, the ends of resistance R15 second, electric capacity C2 first ends, electric capacity C4 first ends, diode D1 anodes, input+13v are common Electric capacity C1 is met with connection, the ends of resistance R14 second difference connecting resistance R15 first ends, the pin of multiplication of voltage chip U4 seven, the pin of multiplication of voltage chip U4 tri- First end, the ends of electric capacity C1 second connect diode D1 negative electrodes, diode D2 anodes, diode D2 negative electrodes and the ends of electric capacity C4 second respectively 22V output ends, the ends of electric capacity C2 second ground connection are connect respectively；Multiplication of voltage chip U4 uses NE555；
Single-chip microcomputer uses STM32F103ZET6.
Preferably, in addition to：Program compiles circuit；
Program compiling circuit is connected with single-chip microcomputer, and program compiling circuit includes：Chip U5, resistance R21, resistance R22 are compiled, Resistance R23, resistance R24, resistance R25；
Compiling chip U5 uses JTAG1；The pin of compiling chip U5 mono-, two pin, resistance R21 first ends, resistance R22 first ends, Resistance R23 first ends, resistance R24 first ends meet+3.3v, the pin of the termination compiling chips of resistance R21 second U5 tri-, resistance R22 respectively The pin of second termination compiling chip U5 five, the pin of the termination compiling chips of resistance R23 second U5 seven, the termination compiling chips of resistance R24 second The pin of U5 13, the pin of compiling chip U5 nine are grounded by resistance R25；The pin of compiling chip U5 tetra-, six pin, octal, ten pin, 12 pin, 14 pin, 16 pin, ten octals, 20 pin are grounded respectively.
Preferably, power subsystem includes：For the confession powered to hand-held semiconductor minority carrier lifetime tester inner member Battery, for the charging circuit to be charged to supplying cell；
Charging circuit includes：Resistance R21, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, Resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, resistance R33, electric capacity C11, electric capacity C12, electric capacity C13, electric capacity C14 ,+5v supply terminals U11, diode D11, diode D12, diode D13, indicator lamp LED1, indicator lamp LED2, inductance L4, inductance L5, inductance L6, inductance L7, inductance L8, inductance L9, triode Q11, triode Q12, voltage stabilizing chip U12, transport and placing device LM3 ,+12v supply terminals U11；
Resistance R21 first ends are grounded, and resistance R21 the second terminating resistor R22 first ends, the ends of resistance R22 second connect electricity respectively Appearance C11 first ends, inductance L8 first ends, inductance L9 first ends, No. five pin of voltage stabilizing chip U12, inductance L9 second terminate+5v power supplys Terminals U11 No.1 pin, No. bis- pin ground connection of+5v supply terminals U11, the ends of electric capacity C11 second ground connection, voltage stabilizing chip U12 tetra- Pin connects the ends of inductance L8 second, diode D11 anodes respectively, and diode D11 negative electrodes meet electric capacity C13 first ends, electric capacity C14 respectively One end, resistance R26 first ends ,+13v power supplys, diode D12 anodes, the pin of voltage stabilizing chip U12 tri- ground connection, the pin of voltage stabilizing chip U12 mono- It is grounded by resistance R23 and electric capacity C12, the pin of voltage stabilizing chip U12 bis- are grounded by resistance R24 respectively, are connected with resistance R25 first ends Connect, the ends of resistance R25 second are connected with the ends of resistance R26 second, diode D12 negative electrodes, inductance L4, inductance L5, diode D13 series connection Connection, the ends of electric capacity C13 second and the ends of electric capacity C14 second be grounded respectively, diode D13 negative electrodes difference connecting resistance R27 first ends and Inductance L7 first ends；
The ends of resistance R27 second, the ends of resistance R32 second, the ends of resistance R33 second, the pin of transport and placing device LM3 mono- ,+12v power supply wirings The pin of U11 bis- are held, earth leakage protective device F1 is connected jointly, and resistance R32 first terminates USB1, and resistance R33 first ends are connected by resistance R31 Triode Q12 base stages, the pin of transport and placing device LM3 tri- connection resistance R32 sliding ends are connect, inductance L7 passes through inductance L6 connection transport and placing devices LM3 Two pin, the pin of+12v supply terminals U11 mono- ground connection, the pin of transport and placing device LM3 tetra- ground connection, transport and placing device LM3 octals connect+12v power supplys, three poles Pipe Q12 grounded emitters, triode Q12 colelctor electrodes connect indicator lamp LED1 first ends, the ends of indicator lamp LED1 second difference connecting resistance The ends of R28 second, resistance R29 first ends；Resistance R28 first terminates USB2, and resistance R29 second terminates triode Q11 base stages, three poles Pipe Q11 emitter stages are grounded by indicator lamp LED2, and triode Q11 colelctor electrodes meet USB3 by resistance R30；Transport and placing device LM3 is used LM393；Voltage stabilizing chip U12 uses LM2576S-ADJ-TO263.
Preferably, display screen uses TFT_LCD；
AD acquisition modules use two-way Differential Input capture card, chip ADSD1256.
Preferably, detection device includes：Two sets of detection agencies；
Detection agency is provided with probe, wire and plug；
Plug is adapted with the jack and is connected.
As can be seen from the above technical solutions, the utility model has advantages below：
Operating personnel can measure the data message of detected element by hand-held semiconductor minority carrier lifetime tester.Use When probe is pressed in silicon material with certain dynamics, probe spacing 0.5MM, wait it is stable after laser open, be radiated at root probe Between, laser is closed, gathered data while closing laser, and a test period completes.Single-chip microcomputer enters to whole process Output data presentation of information to display screen, personnel's viewing easy to operation are simultaneously obtained information by row control.And hand-held semiconductor Supplying cell is easy to carry built in minority carrier lifetime tester.
Brief description of the drawings
In order to illustrate more clearly of the technical solution of the utility model, the required accompanying drawing used in description will be made below Simply introduce, it should be apparent that, drawings in the following description are only some embodiments of the utility model, for this area For those of ordinary skill, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the overall schematic of hand-held semiconductor minority carrier lifetime tester；
Fig. 2 is instrument body schematic diagram；
Fig. 3 is constant-current source gear selecting module circuit diagram；
Fig. 4 is that circuit figure occurs for constant-current source；
Fig. 5 is that circuit figure occurs for constant-current source；
Fig. 6 is laser driving circuit circuit diagram；
Fig. 7 is two voltage-multiplying circuit circuit diagrams；
Fig. 8 is that program compiles circuit figure；
Fig. 9 is charging circuit circuit diagram；
Figure 10 is detection agency structural representation.
Embodiment
, below will fortune to enable purpose of utility model of the present utility model, feature, advantage more obvious and understandable With specific embodiment and accompanying drawing, the technical scheme of the utility model protection is clearly and completely described, it is clear that below Described embodiment is only the utility model part of the embodiment, and not all embodiment.Based on the reality in this patent Example is applied, all other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, is all belonged to In the scope of this patent protection.
The present embodiment provides a kind of hand-held semiconductor minority carrier lifetime tester, as shown in Figure 1, 2, including：Instrument body 11, the power line and detection device being connected respectively with instrument body 11；
Instrument body 11 is provided with display screen 12, power switch button 15, reset switch button 16, laser switch button 13, laser upshift button 17, laser downshift button 18, brightness of display screen adjusting knob 14；
The inside of instrument body 11 is provided with infrared laser 1, mainboard and the power supply for being powered to tester inner member Unit；
Mainboard is provided with single-chip microcomputer 3, constant-current source gear selecting module 4, AD acquisition modules 5, laser driving circuit 6, program volume Encode road 8；Reset switch button 16, laser switch button 13, display screen 12, constant-current source gear selecting module 4, program compiling circuit 8 are connected with single-chip microcomputer 3 respectively；
The data message of detection detected element, and by AD acquisition modules by the data information transfer of collection extremely Single-chip microcomputer；
Infrared laser 1 is connected by laser driving circuit 6 with single-chip microcomputer 3, and laser driving circuit 6 is used to make monolithic Machine 3 controls the start and stop of infrared laser 1 according to the input instruction of laser switch button 13；Laser upshift button 17, laser Downshift button 18 is connected with constant-current source gear selecting module 4 respectively, for making user be dropped by laser upshift button 17 or laser The shelves regulation stall of button 18；Power switch button 15 is connected with power subsystem, and power switch button 15 controls the logical of power subsystem It is disconnected；Brightness of display screen adjusting knob 14 is connected with display screen 12, and brightness of display screen adjusting knob adjusts the brightness of display screen.Reset Switch key 16 is used for monolithic processor resetting.
Hand-held semiconductor minority carrier lifetime tester is using Microwave Photoconductive Decay method test minority carrier life time, including light injection Produce two processes of change of electron-hole pair and microwave sounding signal.Laser injection produces electron-hole pair, sample conductance Rate increase, when removing ambient light injection, for electrical conductivity with time exponential damping, this trend has shown few sub attenuation trend, The trend that can be then changed over time by observing electrical conductivity can survey few sub life-span.And electrical conductivity is detected during microwave signal Change, the principle directly proportional to the variable quantity of electrical conductivity of the variable quantity according to microwave signal.
Hand-held semiconductor minority carrier lifetime tester can measure the resistivity and minority carrier life time of detected element, may be used also certainly To measure other data messages of detected element, detection device 2 uses two probes.Probe is pressed in certain dynamics during use In silicon material, probe spacing 0.5MM, laser is opened after waiting stabilization, is radiated between 2 probes, and laser is closed, and is closed and is swashed Gathered data while light device, a test period complete.Contacted specifically, probe meets (VCCA, VCCB), constant-current source gear selecting, AD gathered datas (voltage), VCCB voltage, electric current, obtain voltage x current, obtain resistance, obtain resistivity, and DAC calculates output simulation electricity Pressure, laser is opened, close laser, single-chip microcomputer obtains minority carrier life time, shown by display screen.
In the present embodiment, as shown in Figure 10, detection device includes：Two sets of detection agencies 31；Detection agency 31 is provided with probe 32, wire 33 and plug 34；Plug 34 is adapted with the jack 21 and is connected.
In the present embodiment, as shown in figure 3, constant-current source gear selecting module includes：Constant-current source generation circuit, inductance L1, resistance R1, Resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, electric wire connecting junction U3, transport and placing device LM1, FET Q1, gear selecting switch；
Inductance L1 first terminates+5v power supplys, the ends of inductance L1 second difference connecting resistance R1 first ends, No. eight pin of transport and placing device LM1 Connected with power supply VCC-A ends, the ends of resistance R1 second are connected with No. tri- pin of transport and placing device LM1 and electric wire connecting junction U3 No.1 pin respectively, amplifier No. tetra- pin of device LM1, No. tri- pin of electric wire connecting junction U3, the ends of resistance R2 second, the ends of resistance R3 second, the ends of resistance R4 second, resistance R5 second End, the ends of resistance R6 second are grounded respectively, No. bis- pin of transport and placing device LM1 S poles with FET Q1 respectively, the GDK1 of gear selecting switch, The GDK2 of gear selecting switch, the GDK3 of gear selecting switch, the GDK4 connections of gear selecting switch, the GDK11 of gear selecting switch, gear selecting switch GDK22, the GDK33 of gear selecting switch, the GDK44 of gear selecting switch respectively with resistance R3 first ends, resistance R4 first ends, resistance R5 the One end, the connection of resistance R6 first ends；Transport and placing device LM1 No.1s pin connection FET Q1 G poles and resistance R2 first ends.
In the present embodiment, as shown in Figure 4, Figure 5, circuit, which occurs, for constant-current source includes：Photoelectric relay U1, photoelectric relay U2, resistance R7, resistance R8, resistance R9, resistance R10；
The pin of photoelectric relay U1 mono- are single by resistance R8 connections by resistance R7 connection single-chip microcomputers, the pin of photoelectric relay U1 tri- Piece machine, the pin of photoelectric relay U2 mono- pass through resistance R10 connection monolithics by resistance R9 connection single-chip microcomputers, the pin of photoelectric relay U2 tri- Machine, the pin of photoelectric relay U1 bis-, four pin, the pin of photoelectric relay U2 bis-, four pin are grounded respectively；The pin selecting shelves of photoelectric relay U1 five The GDK33 of the pin selecting gear switch of the GDK3 of switch, photoelectric relay U1 six, photoelectric relay U1 seven pin selecting gear switch GDK4, the GDK44 of photoelectric relay U1 octal selecting gear switch, the GDK1 of the pin selecting gear switch of photoelectric relay U2 five, photoelectricity The GDK2, photoelectric relay U2 eight of the GDK11 of the pin selecting gear switch of relay U2 six, photoelectric relay U2 seven pin selecting gear switch AQY212 is respectively adopted in the GDK22 of pin selecting gear switch, photoelectric relay U1, photoelectric relay U2.
In the present embodiment, as shown in fig. 6, laser driving circuit includes：Inductance L2, inductance L3, resistance R11, resistance R12, resistance R13, triode Q3, FET Q2；
Resistance R11 first ends connect single-chip microcomputer, and resistance R11 second terminates triode Q3 base stages, triode Q3 colelctor electrodes difference Connecting resistance R12 first ends, resistance R13 first ends, the ends of resistance R12 second connect+12v power supplys, the ends of resistance R13 second by inductance L2 FET Q2G ends are connect, FET Q2D ends connect+12v power supplys, FET Q2S termination infrared lasers by inductance L3 LED1_A, infrared laser LED1_B are grounded, triode Q3 grounded emitters.
In the present embodiment, as shown in fig. 7, also including：Two voltage-multiplying circuits, two voltage-multiplying circuits supply hand-held for producing 22V Semiconductor minority carrier lifetime tester inner member uses；Two voltage-multiplying circuits include：Electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, Electric capacity C5, multiplication of voltage chip U4, diode D1, diode D2, resistance R14, resistance R15；The pin of multiplication of voltage chip U4 mono-, electric capacity C3 first End, electric capacity C5 first ends are grounded respectively, and the pin of multiplication of voltage chip U4 five are connected with the ends of electric capacity C3 second；The pin of multiplication of voltage chip U4 bis- respectively with Six pin, the ends of electric capacity C5 second connect with resistance R14 first ends；The pin of multiplication of voltage chip U4 tetra-, octal, the ends of resistance R15 second, electric capacity C2 First end, electric capacity C4 first ends, diode D1 anodes, input+13v are connected jointly, the ends of resistance R14 second difference connecting resistance R15 First end, the pin of multiplication of voltage chip U4 seven, the pin of multiplication of voltage chip U4 tri- connect electric capacity C1 first ends, and the ends of electric capacity C1 second meet diode D1 respectively Negative electrode, diode D2 anodes, diode D2 negative electrodes and the ends of electric capacity C4 second connect 22V output ends, the ends of electric capacity C2 second ground connection respectively； Multiplication of voltage chip U4 uses NE555；Single-chip microcomputer uses STM32F103ZET6.Two voltage-multiplying circuits produce 22V, make for LM393 power supplies With.LM393 supply voltage need to it is bigger 1.8V than input voltage just can normal work, for convenience and save circuit, two times of piezoelectricity Road is boosted, and supply LM393 is used.
In the present embodiment, as shown in figure 8, program compiling circuit is connected with single-chip microcomputer, program compiling circuit includes：Compile core Piece U5, resistance R21, resistance R22, resistance R23, resistance R24, resistance R25；
Compiling chip U5 uses JTAG1；The pin of compiling chip U5 mono-, two pin, resistance R21 first ends, resistance R22 first ends, Resistance R23 first ends, resistance R24 first ends meet+3.3v, the pin of the termination compiling chips of resistance R21 second U5 tri-, resistance R22 respectively The pin of second termination compiling chip U5 five, the pin of the termination compiling chips of resistance R23 second U5 seven, the termination compiling chips of resistance R24 second The pin of U5 13, the pin of compiling chip U5 nine are grounded by resistance R25；The pin of compiling chip U5 tetra-, six pin, octal, ten pin, 12 pin, 14 pin, 16 pin, ten octals, 20 pin are grounded respectively.
In the present embodiment, as shown in figure 9, power subsystem includes：For in hand-held semiconductor minority carrier lifetime tester The supplying cell of portion's power elements, for the charging circuit to be charged to supplying cell；
Charging circuit includes：Resistance R21, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, Resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, resistance R33, electric capacity C11, electric capacity C12, electric capacity C13, electric capacity C14 ,+5v supply terminals U11, diode D11, diode D12, diode D13, indicator lamp LED1, indicator lamp LED2, inductance L4, inductance L5, inductance L6, inductance L7, inductance L8, inductance L9, triode Q11, triode Q12, voltage stabilizing chip U12, transport and placing device LM3 ,+12v supply terminals U11；
Resistance R21 first ends are grounded, and resistance R21 the second terminating resistor R22 first ends, the ends of resistance R22 second connect electricity respectively Appearance C11 first ends, inductance L8 first ends, inductance L9 first ends, No. five pin of voltage stabilizing chip U12, inductance L9 second terminate+5v power supplys Terminals U11 No.1 pin, No. bis- pin ground connection of+5v supply terminals U11, the ends of electric capacity C11 second ground connection, voltage stabilizing chip U12 tetra- Pin connects the ends of inductance L8 second, diode D11 anodes respectively, and diode D11 negative electrodes meet electric capacity C13 first ends, electric capacity C14 respectively One end, resistance R26 first ends ,+13v power supplys, diode D12 anodes, the pin of voltage stabilizing chip U12 tri- ground connection, the pin of voltage stabilizing chip U12 mono- It is grounded by resistance R23 and electric capacity C12, the pin of voltage stabilizing chip U12 bis- are grounded by resistance R24 respectively, are connected with resistance R25 first ends Connect, the ends of resistance R25 second are connected with the ends of resistance R26 second, diode D12 negative electrodes, inductance L4, inductance L5, diode D13 series connection Connection, the ends of electric capacity C13 second and the ends of electric capacity C14 second be grounded respectively, diode D13 negative electrodes difference connecting resistance R27 first ends and Inductance L7 first ends；
The ends of resistance R27 second, the ends of resistance R32 second, the ends of resistance R33 second, the pin of transport and placing device LM3 mono- ,+12v power supply wirings The pin of U11 bis- are held, earth leakage protective device F1 is connected jointly, and resistance R32 first terminates USB1, and resistance R33 first ends are connected by resistance R31 Triode Q12 base stages, the pin of transport and placing device LM3 tri- connection resistance R32 sliding ends are connect, inductance L7 passes through inductance L6 connection transport and placing devices LM3 Two pin, the pin of+12v supply terminals U11 mono- ground connection, the pin of transport and placing device LM3 tetra- ground connection, transport and placing device LM3 octals connect+12v power supplys, three poles Pipe Q12 grounded emitters, triode Q12 colelctor electrodes connect indicator lamp LED1 first ends, the ends of indicator lamp LED1 second difference connecting resistance The ends of R28 second, resistance R29 first ends；Resistance R28 first terminates USB2, and resistance R29 second terminates triode Q11 base stages, three poles Pipe Q11 emitter stages are grounded by indicator lamp LED2, and triode Q11 colelctor electrodes meet USB3 by resistance R30；Transport and placing device LM3 is used LM393；Voltage stabilizing chip U12 uses LM2576S-ADJ-TO263.
Charging circuit charges for supplying cell, that is, 5V turns 12V, separately has and turns circuit for lamp, indicator lamp LED2 is red light, is filled In electricity.Indicator lamp LED1 is that green light is full of lamp.Turn lamp using comparator LM393 to realize.
Display screen uses TFT_LCD；AD acquisition modules use two-way Differential Input capture card, chip ADSD1256.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or new using this practicality Type.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein The General Principle of justice can be realized in other embodiments in the case where not departing from spirit or scope of the present utility model.Cause This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein The most wide scope consistent with features of novelty.

Claims (10)

  1. A kind of 1. hand-held semiconductor minority carrier lifetime tester, it is characterised in that including：Instrument body, respectively with instrument body The power line and detection device of connection；
    Instrument body is provided with display screen, power switch button, reset switch button, laser switch button, laser upshift Button, laser downshift button, brightness of display screen adjusting knob；
    Infrared laser, mainboard and the power subsystem for being powered to tester inner member are provided with inside instrument body；
    Mainboard is provided with single-chip microcomputer, constant-current source gear selecting module, AD acquisition modules, laser driving circuit, program compiling circuit；
    Reset switch button, laser switch button, display screen, constant-current source gear selecting module, program compiling circuit respectively with monolithic Machine connects；
    The data message of detection detected element, and by AD acquisition modules by the data information transfer of collection to monolithic Machine；
    Infrared laser is connected by laser driving circuit with single-chip microcomputer, and laser driving circuit is used to make single-chip microcomputer according to sharp The input instruction of light device switch key, control infrared laser start and stop；
    Laser upshift button, laser downshift button is connected with constant-current source gear selecting module respectively, for making user pass through laser Device upshift button or laser downshift button regulation stall；
    Power switch button is connected with power subsystem, and power switch button controls the break-make of power subsystem；
    Brightness of display screen adjusting knob is connected with display screen, and brightness of display screen adjusting knob adjusts the brightness of display screen.
  2. 2. hand-held semiconductor minority carrier lifetime tester according to claim 1, it is characterised in that
    Instrument body includes：Hand grip portion and viewing area；
    Hand grip portion outer wrap has rubber layer, and two sides of hand grip portion are provided with anti-slip rubber projection；
    The top of instrument body is provided with the jack for being adapted and being connected with detection device.
  3. 3. hand-held semiconductor minority carrier lifetime tester according to claim 1 or 2, it is characterised in that
    Constant-current source gear selecting module includes：Circuit, inductance L1, resistance R1, resistance R2, resistance R3, resistance R4, resistance occur for constant-current source R5, resistance R6, electric wire connecting junction U3, transport and placing device LM1, FET Q1, gear selecting switch；
    Inductance L1 first terminates+5v power supplys, the ends of inductance L1 second difference connecting resistance R1 first ends, No. eight pin of transport and placing device LM1 and electricity Source VCC-A ends are connected, and the ends of resistance R1 second are connected with No. tri- pin of transport and placing device LM1 and electric wire connecting junction U3 No.1 pin respectively, transport and placing device LM1 No. four pin, No. tri- pin of electric wire connecting junction U3, the ends of resistance R2 second, the ends of resistance R3 second, the ends of resistance R4 second, the ends of resistance R5 second, electricity Resistance R6 second ends are grounded respectively, and No. bis- pin of transport and placing device LM1 respectively open by the S poles with FET Q1, the GDK1 of gear selecting switch, gear selecting The GDK2 of pass, the GDK3 of gear selecting switch, the GDK4 connections of gear selecting switch, the GDK11 of gear selecting switch, the GDK22 of gear selecting switch, choosing The GDK33 of gear switch, the GDK44 of gear selecting switch are electric with resistance R3 first ends, resistance R4 first ends, resistance R5 first ends respectively Hinder the connection of R6 first ends；Transport and placing device LM1 No.1s pin connection FET Q1 G poles and resistance R2 first ends.
  4. 4. hand-held semiconductor minority carrier lifetime tester according to claim 3, it is characterised in that
    Circuit, which occurs, for constant-current source includes：Photoelectric relay U1, photoelectric relay U2, resistance R7, resistance R8, resistance R9, resistance R10；
    The pin of photoelectric relay U1 mono- pass through resistance R8 connection monolithics by resistance R7 connection single-chip microcomputers, the pin of photoelectric relay U1 tri- Machine, the pin of photoelectric relay U2 mono- pass through resistance R10 connection monolithics by resistance R9 connection single-chip microcomputers, the pin of photoelectric relay U2 tri- Machine, the pin of photoelectric relay U1 bis-, four pin, the pin of photoelectric relay U2 bis-, four pin are grounded respectively；The pin selecting shelves of photoelectric relay U1 five The GDK33 of the pin selecting gear switch of the GDK3 of switch, photoelectric relay U1 six, photoelectric relay U1 seven pin selecting gear switch GDK4, the GDK44 of photoelectric relay U1 octal selecting gear switch, the GDK1 of the pin selecting gear switch of photoelectric relay U2 five, photoelectricity The GDK2, photoelectric relay U2 eight of the GDK11 of the pin selecting gear switch of relay U2 six, photoelectric relay U2 seven pin selecting gear switch AQY212 is respectively adopted in the GDK22 of pin selecting gear switch, photoelectric relay U1, photoelectric relay U2.
  5. 5. hand-held semiconductor minority carrier lifetime tester according to claim 1 or 2, it is characterised in that
    Laser driving circuit includes：Inductance L2, inductance L3, resistance R11, resistance R12, resistance R13, triode Q3, field-effect Pipe Q2；
    Resistance R11 first ends connect single-chip microcomputer, and resistance R11 second terminates triode Q3 base stages, and triode Q3 colelctor electrodes connect electricity respectively R12 first ends, resistance R13 first ends are hindered, the ends of resistance R12 second connect+12v power supplys by inductance L2, and resistance R13 second terminates field Effect pipe Q2G ends, FET Q2D ends meet+12v power supplys, FET Q2S termination infrared lasers LED1_ by inductance L3 A, infrared laser LED1_B are grounded, triode Q3 grounded emitters.
  6. 6. hand-held semiconductor minority carrier lifetime tester according to claim 1, it is characterised in that
    Also include：Two voltage-multiplying circuits, two voltage-multiplying circuits are used to produce 22V for member inside hand-held semiconductor minority carrier lifetime tester Part uses；
    Two voltage-multiplying circuits include：Electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, multiplication of voltage chip U4, diode D1, two Pole pipe D2, resistance R14, resistance R15；
    The pin of multiplication of voltage chip U4 mono-, electric capacity C3 first ends, electric capacity C5 first ends are grounded respectively, the pin of multiplication of voltage chip U4 five and electric capacity C3 the Two ends connect；The pin of multiplication of voltage chip U4 bis- connect with six pin, the ends of electric capacity C5 second with resistance R14 first ends respectively；Multiplication of voltage chip U4 Four pin, octal, the ends of resistance R15 second, electric capacity C2 first ends, electric capacity C4 first ends, diode D1 anodes, input+13v connect jointly Connect, the ends of resistance R14 second difference connecting resistance R15 first ends, the pin of multiplication of voltage chip U4 seven, the pin of multiplication of voltage chip U4 tri- meet electric capacity C1 first End, the ends of electric capacity C1 second connect diode D1 negative electrodes, diode D2 anodes, diode D2 negative electrodes and the ends of electric capacity C4 second difference respectively Connect 22V output ends, the ends of electric capacity C2 second ground connection；Multiplication of voltage chip U4 uses NE555；
    Single-chip microcomputer uses STM32F103ZET6.
  7. 7. hand-held semiconductor minority carrier lifetime tester according to claim 1, it is characterised in that
    Also include：Program compiles circuit；
    Program compiling circuit is connected with single-chip microcomputer, and program compiling circuit includes：Compile chip U5, resistance R21, resistance R22, resistance R23, resistance R24, resistance R25；
    Compiling chip U5 uses JTAG1；Compile the pin of chip U5 mono-, two pin, resistance R21 first ends, resistance R22 first ends, resistance R23 first ends, resistance R24 first ends meet+3.3v, the pin of the termination compiling chips of resistance R21 second U5 tri-, resistance R22 second respectively The pin of termination compiling chip U5 five, the pin of the termination compiling chips of resistance R23 second U5 seven, the termination compiling chips of resistance R24 second U5 ten Three pin, the pin of compiling chip U5 nine are grounded by resistance R25；The pin of compiling chip U5 tetra-, six pin, octal, ten pin, 12 pin, 14 Pin, 16 pin, ten octals, 20 pin are grounded respectively.
  8. 8. hand-held semiconductor minority carrier lifetime tester according to claim 1, it is characterised in that
    Power subsystem includes：For the supplying cell powered to hand-held semiconductor minority carrier lifetime tester inner member, it is used for Charging circuit to supplying cell charging；
    Charging circuit includes：Resistance R21, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, resistance R27, resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, resistance R33, electric capacity C11, electric capacity C12, electric capacity C13, electric capacity C14 ,+ 5v supply terminals U11, diode D11, diode D12, diode D13, indicator lamp LED1, indicator lamp LED2, inductance L4, electricity Feel L5, inductance L6, inductance L7, inductance L8, inductance L9, triode Q11, triode Q12, voltage stabilizing chip U12, transport and placing device LM3 ,+ 12v supply terminals U11；
    Resistance R21 first ends are grounded, and resistance R21 the second terminating resistor R22 first ends, the ends of resistance R22 second meet electric capacity C11 respectively First end, inductance L8 first ends, inductance L9 first ends, No. five pin of voltage stabilizing chip U12, inductance L9 second terminate+5v power supply wirings Hold U11 No.1 pin, No. bis- pin ground connection of+5v supply terminals U11, the ends of electric capacity C11 second ground connection, voltage stabilizing chip U12 No. tetra- pin point The ends of inductance L8 second, diode D11 anodes are not connect, and diode D11 negative electrodes meet electric capacity C13 first ends, electric capacity C14 first respectively End, resistance R26 first ends ,+13v power supplys, diode D12 anodes, the pin of voltage stabilizing chip U12 tri- ground connection, the pin of voltage stabilizing chip U12 mono- lead to Resistance R23 and electric capacity C12 ground connection is crossed, the pin of voltage stabilizing chip U12 bis- are grounded by resistance R24 respectively, are connected with resistance R25 first ends Connect, the ends of resistance R25 second are connected with the ends of resistance R26 second, diode D12 negative electrodes, inductance L4, inductance L5, diode D13 series connection Connection, the ends of electric capacity C13 second and the ends of electric capacity C14 second be grounded respectively, diode D13 negative electrodes difference connecting resistance R27 first ends and Inductance L7 first ends；
    The ends of resistance R27 second, the ends of resistance R32 second, the ends of resistance R33 second, the pin of transport and placing device LM3 mono- ,+12v supply terminals U11 Two pin, earth leakage protective device F1 are connected jointly, and resistance R32 first terminates USB1, and resistance R33 first ends pass through resistance R31 connections three Pole pipe Q12 base stages, the pin of transport and placing device LM3 tri- connection resistance R32 sliding ends, inductance L7 by the pin of inductance L6 connection transport and placing devices LM3 bis-, The pin of+12v supply terminals U11 mono- are grounded, and the pin of transport and placing device LM3 tetra- ground connection, transport and placing device LM3 octals meet+12v power supplys, triode Q12 Grounded emitter, triode Q12 colelctor electrodes connect indicator lamp LED1 first ends, the ends of indicator lamp LED1 second difference connecting resistance R28 the Two ends, resistance R29 first ends；Resistance R28 first terminates USB2, and resistance R29 second terminates triode Q11 base stages, triode Q11 Emitter stage is grounded by indicator lamp LED2, and triode Q11 colelctor electrodes meet USB3 by resistance R30；Transport and placing device LM3 uses LM393； Voltage stabilizing chip U12 uses LM2576S-ADJ-TO263.
  9. 9. hand-held semiconductor minority carrier lifetime tester according to claim 1, it is characterised in that
    Display screen uses TFT_LCD；
    AD acquisition modules use two-way Differential Input capture card, chip ADSD1256.
  10. 10. hand-held semiconductor minority carrier lifetime tester according to claim 2, it is characterised in that
    Detection device includes：Two sets of detection agencies；
    Detection agency is provided with probe, wire and plug；
    Plug is adapted with the jack and is connected.
CN201720857295.3U 2017-07-14 2017-07-14 A kind of hand-held semiconductor minority carrier lifetime tester Active CN207051430U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720857295.3U CN207051430U (en) 2017-07-14 2017-07-14 A kind of hand-held semiconductor minority carrier lifetime tester

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720857295.3U CN207051430U (en) 2017-07-14 2017-07-14 A kind of hand-held semiconductor minority carrier lifetime tester

Publications (1)

Publication Number Publication Date
CN207051430U true CN207051430U (en) 2018-02-27

Family

ID=61495663

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201720857295.3U Active CN207051430U (en) 2017-07-14 2017-07-14 A kind of hand-held semiconductor minority carrier lifetime tester

Country Status (1)

Country Link
CN (1) CN207051430U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113960385A (en) * 2020-12-29 2022-01-21 广州昆德半导体测试技术有限公司 Mobile high-frequency photoelectric conductive carrier service life test probe

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113960385A (en) * 2020-12-29 2022-01-21 广州昆德半导体测试技术有限公司 Mobile high-frequency photoelectric conductive carrier service life test probe
CN113960385B (en) * 2020-12-29 2024-02-13 广州昆德半导体测试技术有限公司 Movable high-frequency photoconductive carrier life test probe

Similar Documents

Publication Publication Date Title
CN204832351U (en) Small resistance and insulation resistance's integrated tester
CN101556240B (en) Chlorophyll measuring apparatus based on RGB (red, green and blue) three-primary colors digital signals
CN206489236U (en) It is multi-functional to core instrument
CN207051429U (en) A kind of portable semiconductor minority carrier lifetime tester
CN207051430U (en) A kind of hand-held semiconductor minority carrier lifetime tester
CN104977281A (en) High-precision online fluorescence detector and detection method thereof
CN207937500U (en) A kind of touch screen type multimeter
CN206223724U (en) A kind of test system of blood sugar instrument
CN203164350U (en) Intelligent distribution instrument
CN2426609Y (en) High voltage equipment electric parameter measuring device
CN105046934B (en) A kind of equipment and communication means that can realize that data communicate with heat flow of ocean floor measuring unit
CN107192936A (en) A kind of portable semiconductor minority carrier lifetime tester
CN201532447U (en) Automatic monitoring system of electrical property of solar electric source
CN207197578U (en) A kind of device for testing and analyzing of industrialized agriculture environment of internet of things monitoring system
CN207051180U (en) A kind of charging type semiconductor minority carrier lifetime tester
CN206470378U (en) Power of computer room monitoring device
CN206975177U (en) A kind of device for checking electric relay
CN207301210U (en) A kind of single-phase electrical appliance research and application device
CN209571216U (en) A kind of LED display mould group automatic white balance debugging system
CN204807546U (en) Testing and fertilizer recommendation fertilization appearance
CN206773140U (en) A kind of manual testing's control device for semiconductor test system
CN205910309U (en) Intelligence digital chip detector
CN207832672U (en) A kind of portable comprehensive detector
CN216449672U (en) Automatic change tongue tube electrical parameter measuring apparatu
CN200976287Y (en) High-precision multifunctional procedure signal check meter

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant