CN207039480U - The magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor - Google Patents
The magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor Download PDFInfo
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- CN207039480U CN207039480U CN201721015010.8U CN201721015010U CN207039480U CN 207039480 U CN207039480 U CN 207039480U CN 201721015010 U CN201721015010 U CN 201721015010U CN 207039480 U CN207039480 U CN 207039480U
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- silicon carbide
- transistor
- artsemiconductor
- artsemiconductor silicon
- carbide transistor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model discloses the magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor, including ac input end, input transformer, rectification module, storage capacitor, ARTSemiconductor silicon carbide transistor modular, output transformer and pulse output end, in addition to DSP control panels and transistor driver circuit, the DSP control panels are connected by transistor driver circuit with the grid of ARTSemiconductor silicon carbide transistor modular.ARTSemiconductor silicon carbide transistor modular has the electrology characteristic of broad stopband, high breakdown electric field, high saturation drift velocity and high heat conductance, under the resistance to voltage levels of identical, the parasitic capacitance of ARTSemiconductor silicon carbide transistor is much smaller than other devices, greatly improves the reliability of the magnetron sputtering pulse power.
Description
Technical field
Film coating sputtering driving power is the utility model is related to, is based particularly on the magnetron sputtering of ARTSemiconductor silicon carbide transistor
The pulse power.
Background technology
The pulse power is during pulse plating, and when current lead-through, pulse (peak value) electric current is equivalent to conventional DC electricity
Even tens times of several times of stream, it is exactly that this high instantaneous current density makes metal ion be reduced under high overpotential, so as to
Make sedimentary crystal grains fine；When switch off current, nearby discharge ion returns to initial concentration again in cathodic region, and concentration polarization disappears
Remove, this is continuing with high pulse (peak value) current density beneficial to the next pulse same period, simultaneously turns off in the phase also with to heavy
Phenomena such as favourable recrystallization of lamination, adsorption desorption.Run through to such process synchronism the whole story of whole electroplating process, wherein institute
Comprising mechanism constitute the most basic principle of pulse plating.It was verified that the pulse power is in crystallization of refinement, improvement coating physics
Chemical property, save precious metal etc. has incomparable superiority than Traditional DC plating.
The pulse power pulse power in industry is controlled usually using IGBT (Insulated Bipolar Transistor) at present, its
Reliability deficiency.
Utility model content
To solve the above problems, the purpose of this utility model be to provide a kind of good reliability based on ARTSemiconductor silicon carbide
The magnetron sputtering pulse power of transistor.
Technical scheme is used by the invention for solving the technical problem：
The magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor, including ac input end, input transformer are whole
Flow module, storage capacitor, ARTSemiconductor silicon carbide transistor modular, output transformer and pulse output end, the ac input end,
Input transformer, rectification module are sequentially connected, and two output ends of the rectification module connect the both positive and negative polarity of storage capacitor respectively,
The positive pole of the storage capacitor is connected to the armature winding of output transformer, and the armature winding by exporting transformer is connected to
The drain electrode of ARTSemiconductor silicon carbide transistor modular, the source electrode of the ARTSemiconductor silicon carbide transistor modular and the negative pole of storage capacitor
Connection, the secondary windings of the output transformer are connected with pulse output end；
Also include DSP control panels and transistor driver circuit, the DSP control panels are by transistor driver circuit with partly leading
The grid connection of body carborundum crystals tube module.
Further, the ac input end is connected by EMI filter circuit with input transformer.
Further, the ARTSemiconductor silicon carbide transistor modular includes ARTSemiconductor silicon carbide transistor, by electric capacity C1, electric capacity
The input capacitance group of C2 compositions, the electric capacity C1 are parallel between ARTSemiconductor silicon carbide transistor drain and grid, and electric capacity C1 is simultaneously
It is coupled between ARTSemiconductor silicon carbide transistor source and grid, in addition to output capacitance C3, the output capacitance C3 are connected respectively
The drain electrode of ARTSemiconductor silicon carbide transistor and source electrode.
Further, the transistor driver circuit passes through a gate electrode resistance Rg and the grid of ARTSemiconductor silicon carbide transistor modular
Pole connects.
Further, the resistance of the gate electrode resistance Rg is 5 Ω.
Further, the transistor driver circuit includes optical coupler and drive amplification circuit, the drive amplification circuit bag
Include operational amplifier and by the two-tube power amplification circuits being formed in parallel of triode VT1 and triode VT2, the optical coupler it is defeated
Enter end to be connected with DSP control panels, the output end of optical coupler is connected to the input of operational amplifier, the output end of operational amplifier
Power amplification circuit is connected, the output end of power amplification circuit is connected by gate electrode resistance Rg and ARTSemiconductor silicon carbide transistor modular
Connect.
Further, the triode VT1 and triode VT2 are IXDD614 triodes.
The beneficial effects of the utility model are：The magnetic control based on ARTSemiconductor silicon carbide transistor that the utility model uses splashes
The pulse power is penetrated, employs ARTSemiconductor silicon carbide transistor modular, and ARTSemiconductor silicon carbide transistor modular has broad stopband, height
The electrology characteristic of breakdown electric field, high saturation drift velocity and high heat conductance, under the resistance to voltage levels of identical, ARTSemiconductor silicon carbide is brilliant
The parasitic capacitance of body pipe is much smaller than other devices, greatly improves the reliability of the magnetron sputtering pulse power.
Brief description of the drawings
The utility model is described in further detail with example below in conjunction with the accompanying drawings.
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
Reference picture 1, the magnetron sputtering pulse power of the present utility model based on ARTSemiconductor silicon carbide transistor, including exchange
Input 1, input transformer 2, rectification module 3, storage capacitor 4, ARTSemiconductor silicon carbide transistor modular 5, output transformer 6 and
Pulse output end 7, the ac input end 1, input transformer 2, rectification module 3 are sequentially connected, two of the rectification module 3
Output end connects the both positive and negative polarity of storage capacitor 4 respectively, the positive pole of the storage capacitor 4 be connected to output transformer 6 it is primary around
Group, and it is connected to by exporting the armature winding of transformer 6 drain electrode of ARTSemiconductor silicon carbide transistor modular 5, the semiconductor
The source electrode of carborundum crystals tube module 5 is connected with the negative pole of storage capacitor 4, the secondary windings of the output transformer 6 and pulse
Output end 7 connects；
Also include DSP control panels 8 and transistor driver circuit 9, the DSP control panels 8 by transistor driver circuit 9 with
The grid connection of ARTSemiconductor silicon carbide transistor modular 5.
The DSP control panels 8 control ARTSemiconductor silicon carbide transistor modular 5 by transistor driver circuit 9, become output
The armature winding of depressor 6 produces pulse signal, and the secondary windings by exporting transformer 6 exports pulse electrical signal to pulse and exported
End 7, so as to control the work of magnetic control sputtering system.
The utility model employs ARTSemiconductor silicon carbide transistor modular 5 (Sic MOSFET), and ARTSemiconductor silicon carbide is brilliant
Body tube module 5 has the electrology characteristic of broad stopband, high breakdown electric field, high saturation drift velocity and high heat conductance, resistance in identical
Under voltage levels, the parasitic capacitance of ARTSemiconductor silicon carbide transistor is much smaller than other devices, and its reliability is common si semiconductor devices
10 times of part, heat conductivility improve 3 times, greatly simplify the topological structure of circuit, make the reliability of the magnetron sputtering pulse power
Greatly improve.
Further, in order to further improve the stability of power supply, the ac input end 1 by EMI filter circuit 10 with
Input transformer 2 connects.
Specifically, the ARTSemiconductor silicon carbide transistor modular 5 includes ARTSemiconductor silicon carbide transistor, by electric capacity C1, electricity
Hold the input capacitance group of C2 compositions, the electric capacity C1 is parallel between ARTSemiconductor silicon carbide transistor drain and grid, electric capacity C1
It is parallel between ARTSemiconductor silicon carbide transistor source and grid, in addition to output capacitance C3, the output capacitance C3 connect respectively
Connect drain electrode and the source electrode of ARTSemiconductor silicon carbide transistor.
Further, the transistor driver circuit 9 passes through a gate electrode resistance Rg and ARTSemiconductor silicon carbide transistor modular 5
Grid connects.
In the present embodiment, transistor driver circuit 9 includes optical coupler 91, and the output end of optical coupler 91 is connected to operation amplifier
The input of device 92, make the output impedance of drive circuit small relative to electromagnetic isolation using Phototube Coupling, solve raster data model
The low-impedance problem in source.
Also include drive amplification circuit, the drive amplification circuit includes operational amplifier 92 and by triode VT1 and three
The two-tube power amplification circuits being formed in parallel of pole pipe VT2, the input of the optical coupler 91 are connected with DSP control panels 8, and computing is put
The output end connection power amplification circuit of big device 92, the output end of power amplification circuit are carbonized by gate electrode resistance Rg and semiconductor
Silicon transistor module 5 connects.Drive amplification circuit major function is to realize the power amplification of driving pulse, is used in the present embodiment
By the two-tube power amplification circuits being formed in parallel of triode VT1 and triode VT2, specially IXDD614 triodes, not only may be used
Meet drive circuit high speed, low transmission delay, low output impedance, the requirement of low energy consumption.And the chip has enabled control terminal.
The control function of circuit can further be met.
If gate electrode resistance Rg is too small, it can produce the voltage of ARTSemiconductor silicon carbide transistor modular 5, electric current and seriously shake
Swing, bring detrimental effect to device, but the value for increasing gate electrode resistance Rg can make holding for ARTSemiconductor silicon carbide transistor modular 5
Time and switching loss increase are closed, by Comprehensive Experiment, ensures ARTSemiconductor silicon carbide crystalline substance again to reduce switching loss as far as possible
For body tube module 5 not because it is rapidly switched off, the resistance of the gate electrode resistance Rg is arranged to 5 Ω.
Described above, simply preferred embodiment of the present utility model, the utility model is not limited to above-mentioned implementation
Mode, as long as it reaches technique effect of the present utility model with identical means, it should all belong to the scope of protection of the utility model.
Claims (7)
1. the magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor, it is characterised in that：Including ac input end, input
Transformer, rectification module, storage capacitor, ARTSemiconductor silicon carbide transistor modular, output transformer and pulse output end, the friendship
Stream input, input transformer, rectification module are sequentially connected, and two output ends of the rectification module connect storage capacitor respectively
Both positive and negative polarity, the positive pole of the storage capacitor is connected to the armature winding of output transformer, and by exporting the primary of transformer
Winding is connected to the drain electrode of ARTSemiconductor silicon carbide transistor modular, the source electrode of the ARTSemiconductor silicon carbide transistor modular and energy storage
The negative pole connection of electric capacity, the secondary windings of the output transformer are connected with pulse output end；
Also include DSP control panels and transistor driver circuit, the DSP control panels pass through transistor driver circuit and semiconductor carbon
The grid connection of SiClx transistor modular.
2. the magnetron sputtering pulse power according to claim 1 based on ARTSemiconductor silicon carbide transistor, it is characterised in that：
The ac input end is connected by EMI filter circuit with input transformer.
3. the magnetron sputtering pulse power according to claim 1 based on ARTSemiconductor silicon carbide transistor, it is characterised in that：
The ARTSemiconductor silicon carbide transistor modular includes ARTSemiconductor silicon carbide transistor, the input electricity being made up of electric capacity C1, electric capacity C2
Appearance group, the electric capacity C1 are parallel between ARTSemiconductor silicon carbide transistor drain and grid, and electric capacity C1 is parallel to semiconductor carbonization
Between silicon transistor source electrode and grid, in addition to output capacitance C3, the output capacitance C3 connect ARTSemiconductor silicon carbide crystalline substance respectively
The drain electrode of body pipe and source electrode.
4. the magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor according to claim 1 or 3, its feature exist
In：The transistor driver circuit is connected by a gate electrode resistance Rg with the grid of ARTSemiconductor silicon carbide transistor modular.
5. the magnetron sputtering pulse power according to claim 4 based on ARTSemiconductor silicon carbide transistor, it is characterised in that：
The resistance of the gate electrode resistance Rg is 5 Ω.
6. the magnetron sputtering pulse power according to claim 5 based on ARTSemiconductor silicon carbide transistor, it is characterised in that：
The transistor driver circuit includes optical coupler and drive amplification circuit, the drive amplification circuit include operational amplifier and by
The two-tube power amplification circuits being formed in parallel of triode VT1 and triode VT2, input and the DSP control panels of the optical coupler
Connection, the output end of optical coupler are connected to the input of operational amplifier, the output end connection power amplification electricity of operational amplifier
Road, the output end of power amplification circuit are connected by gate electrode resistance Rg with ARTSemiconductor silicon carbide transistor modular.
7. the magnetron sputtering pulse power according to claim 6 based on ARTSemiconductor silicon carbide transistor, it is characterised in that：
The triode VT1 and triode VT2 are IXDD614 triodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721015010.8U CN207039480U (en) | 2017-08-14 | 2017-08-14 | The magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721015010.8U CN207039480U (en) | 2017-08-14 | 2017-08-14 | The magnetron sputtering pulse power based on ARTSemiconductor silicon carbide transistor |
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| CN207039480U true CN207039480U (en) | 2018-02-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109353225A (en) * | 2018-12-05 | 2019-02-19 | 中车长春轨道客车股份有限公司 | A kind of charger and rail vehicle |
-
2017
- 2017-08-14 CN CN201721015010.8U patent/CN207039480U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109353225A (en) * | 2018-12-05 | 2019-02-19 | 中车长春轨道客车股份有限公司 | A kind of charger and rail vehicle |
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