CN206956142U - The low damage film deposition system of low temperature - Google Patents

Abstract

The utility model discloses a kind of low damage film deposition system of low temperature.The main magnetron sputtering deposition source for including optimization, the magnetron sputtering deposition source include support frame, sputtering target material, magnet, housing unit.Support frame includes the inner surface towards window, and the outer surface relative with inner surface, for limiting a window and thereabout closed-loop path；Sputtering target material is one or more, and installed in the support frame inner surface, the sputtering target material includes one or more sputtering surfaces, constitutes the inwall of the window, and the sputtering target material is used for providing sputter material from the sputtering surface；Described magnet is one or more, installed in support frame outer surface.The utility model allows disclosed depositing system to be run under relatively low technological temperature, and can minimize or eliminate in film deposition process electronic defects in device or caused by device interfaces, while can provide higher plasma density.

Description

The low damage film deposition system of low temperature

Technical field

It the utility model is related to material deposition technique, more particularly to sputtering depositing system.

Background technology

In conventional magnetron sputtering deposition system, the plasma that ion and electronics are formed is excited by direct current or rf electric field Produced, plasma is by magnetically confined to improve sputtering yield.However, energetic ion and high-velocity electrons in plasma It is unnecessary so as to be caused to electronic device made in film or previous processes deposited on substrate that substrate can be reached Damage.This damage may come from the electric charge that inside depositional coating and film layer is captured with film layer interface, and electric charge may be right The Electronic Performance of device has a negative impact；Damage is also likely to be the physical degradation or chemical breakdown due to precise materials, at a high speed Sensitive Apparatus caused by electronics and other anakinetomers overheats, and discomposition caused by energetic ion or dislocation（For example, grind Mill or sputtering）Caused.

Fig. 1 shows the magnetron sputtering deposition system 100 of a routine, and it includes sputtering target material 120 and carries sputtering surface 125.Magnet 130 is used to produce magnetic field near sputtering surface 125.Substrate 110 is placed parallel to sputtering surface 125.Due to lining Bottom 110 is directly exposed under plasma, and above-mentioned damage is it occur frequently that on a substrate 110 in film deposition process.For example, have Machine light emitting diode（OLED）The encapsulation of device be related on the OLED substrate prepared deposition oxide or Nitride film.When oxide or nitride film are as prepared by traditional sputtering depositing system 100, above-mentioned damage can OLED can be caused to fail.

Therefore a kind of improved thin film deposition system is needed, can be by energetic ion in film deposition process or high-velocity electrons pair The damage of film layer or device is eliminated or is preferably minimized on substrate.

Utility model content

The utility model discloses a kind of low damage film deposition system of low temperature, pass through the optimization to sputtering sedimentation source, institute The depositing system stated can be run under relatively low technological temperature, and can be minimized or eliminate in film deposition process in device Or electronic defects caused by device interfaces, while higher plasma density can be provided.

A kind of low temperature is low to damage film deposition system, the main magnetron sputtering deposition source for including optimization, the magnetron sputtering Sedimentary origin includes support frame, sputtering target material, magnet, housing unit；

The support frame includes the inner surface towards window, and the outer surface relative with inner surface, for limiting one Window and thereabout closed-loop path；

The sputtering target material is one or more, and installed in the support frame inner surface, the sputtering target material includes One or more sputtering surfaces, the inwall of the window is constituted, the sputtering target material, which is used for providing from the sputtering surface, to be splashed Penetrate material；

Described magnet is one or more, installed in support frame outer surface；

Described housing unit is used for accommodating the support frame, magnet, and sputtering target material.

The support frame, further comprise multiple ribs along its outer surface, defined between the rib and rib One or more cooling-water ducts, the cooling-water duct are used for circulating cooling agent to take away the support frame and the sputtering The heat of target.

The magnet is fixed on the rib, and the magnet includes multiple parallel along the support frame outer surface Closed ring loop.

The sputter material is deposited to the deposition surface of the first substrate, wherein the deposition surface towards and it is substantially vertical In the window that the support frame is formed, depositing system can also further comprise that transmission mechanism is used in first substrate and institute State and produce relative motion between magnetron sputtering deposition source.

Further comprise that the second substrate is located at the side opposite with first substrate relative to the support frame, it is described Second substrate includes the second deposition surface of the window formed towards the support frame, and second deposition surface is used for Receive the sputter material sputtered out from the sputtering target material, second deposition surface can be substantially perpendicular to the sputtering table Face.

Further comprise that a vacuum technology chamber is used for accommodating magnetron sputtering deposition source and substrate.

First substrate is prefabricated Organic Light Emitting Diode（OLED）Device, metal oxide（For example, indium gallium zinc oxygen Compound, or " IGZO "）, thin film transistor (TFT)（TFT）, transparent conductive oxide（TCO）Layer, or radio frequency identification（RFID）In device At least one, the sputter material can encapsulate one or more prefabricated electronic devices on the first substrate.

Depositing system disclosed in the utility model has advantages below：It can be run under relatively low technological temperature（Lining Bottom temperature can as little as 80 DEG C）, while higher plasma density can be provided, this to realize more during thin film deposition The required performance of wide scope；With scale scalability --- from the substrate of processing very little to very big substrate；Higher is heavy Product efficiency and stock utilization, when using double-sided deposition pattern, disclosed system can increase compared with single sided deposition pattern The yield and stock utilization to double.

Brief description of the drawings

Fig. 1 illustrates conventional sputtering depositing system.

Fig. 2 is the schematic diagram according to depositing system of the present utility model.

Fig. 3 is the stereogram of the sedimentary origin to match with depositing system shown in Fig. 2.

Fig. 4 is the side view according to another depositing system of the present utility model.

Fig. 4 A and Fig. 4 B are the sedimentary origin of depositing system and the stereogram of substrate shown in Fig. 4.

Fig. 4 C are stereograms when sedimentary origin shown in Fig. 4 B does not have housing unit.

Embodiment

Reference picture 2 and Fig. 3, depositing system 200 include being located at the first substrate 220 and the second substrate 220A（That is workpiece）Between Magnetron sputtering deposition source 210.The magnetron sputtering deposition source 210, which is used for producing, points to and deposits to the first substrate 220 and the Gasification materials on two substrate 220A.The magnetron sputtering deposition source 210 and the substrate 220 are arranged in vacuum chamber （It is not shown for the sake of simplicity）.The magnetron sputtering deposition source 210 builds in support frame 240 and forms window 245.Splash Material 250 of shooting at the target is arranged on the inner surface of the backing frame 240, defines the window 245.In one embodiment, it is described The shape of support frame 240 can be rectangle.The sputtering surface 255 of the sputtering target material 250, with first substrate 220 and Second substrate 220A 221 substantially vertical arrangement of deposition surface.

The sputtering target material 250 can be bound or be bolted in the support frame 240 so that the sputtering surface To limit the inwall of the window 245, the sputtering target material 250 electrically connects with the support frame 240 for 255 direction inside.Magnetic The outer surface that body can be arranged on the support frame 240 produces magnetic field near the sputtering surface 255.The magnet is favourable Closing around the sputtering surface 255 for limiting the sputtering target material 250 of the plasma in the support frame 240 In loop.Different from the controlled sputtering source of routine, the substrate 220A of the first substrate 220 and second will not be directly exposed to described Magnetic field near sputtering surface 255, this will make it that energetic ion or swift electron reach first substrate 220 in sputter procedure Significantly reduced with the possibility on the second substrate 220A surfaces, i.e., it is thin to having been made on the substrate 220A of the first substrate 220 and second The damage of film or device will significantly reduce..

The substrate 220A of first substrate 220 and second and the substantially vertical placement in the surface of sputtering target material 250.Film sinks During product, the substrate 220A of the first substrate 220 and second relative to the magnetron sputtering deposition source 210 can remains stationary, Or it is driven by transmission mechanism 260 relative to the magnetron sputtering deposition source 210.The substrate of first substrate 220 and second 220A can be placed in the one or both sides in the magnetron sputtering deposition source 210.If it is placed on the magnetron sputtering deposition source 210 Both sides, the material that the sputtering surface 255 is sputtered can be collected in the both sides in the magnetron sputtering deposition source 210, therefore There are double deposition efficiency and stock utilization compared with single sided deposition.

Reference picture 4 and Fig. 4 A, precipitation equipment 400 includes magnetron sputtering deposition source 410 in one of embodiment, and it can put Put between the first substrate 420 and the second substrate 420A.The magnetron sputtering deposition source 410 and the He of the first substrate 420 Second substrate 420A can be enclosed in vacuum chamber 405.The precipitation equipment 400 include vacuum turbomolecular pump 406 be used for from Extract air or gas in the vacuum chamber 405 out, optional vacuum ports 408 are used to connect thick vacuum pumping pump or air bleeding valve, And load locking room 407 is used to loading and unloading the first substrate 420 and the second substrate 420A（Or wafer or workpiece）From described It is sent into and takes out in vacuum chamber 405.

Reference picture 4B and 4C, support frame 460 described in one of embodiment include the rib 465 along its outer surface, The magnet 470 is fixed on the rib 465.The magnet can be formed to be formed along the outer surface of the support frame 460 Loop.Wherein, the magnet 470 itself can be multiple parallel rings, be formed along the outer surface of support frame 460 Loop.The magnet 470, sputtering target material 450 and the support frame 460 are fixed in housing unit 440.

The sputtering target material 450 electrically connects with the support frame 460, but is electrically insulated with the housing unit 440.It is described Sputtering target material 450 also carries out heat exchange with the support frame 460 simultaneously.In one of embodiment, reference picture 4B and 4C, institute State the outer surface of support frame 460 the rib 465 may be configured to cooling duct 480 be used for circulate coolant with take away sputtering and Caused heat in deposition process.Therefore the temperature of the sputtering target material 450 can be controlled for ensuring that appropriate process conditions.

Here only describe the embodiment of part, except sputtering sedimentation, disclosed system applies also for employing etc. from Daughter strengthens or the various thin film depositions of auxiliary and plasma cleaning techniques.The example includes plasma enhanced chemical gas Mutually deposit（PECVD）, plasma enhanced chemical vapor transmission deposition（PEVTD）, the thermal evaporation of plasma enhancing, at plasma surface Reason, plasmaassisted evaporation, or the combination of these technologies.

Claims (7)

1. a kind of low temperature is low to damage film deposition system, it is characterised in that the main magnetron sputtering deposition source for including optimization, it is described Magnetron sputtering deposition source includes support frame, sputtering target material, magnet, housing unit；

The support frame includes inner surface towards window and the outer surface relative with inner surface, for limit a window with And thereabout closed-loop path；

The sputtering target material is one or more, and installed in the support frame inner surface, the sputtering target material includes one Or multiple sputtering surfaces, the inwall of the window is constituted, the sputtering target material, which is used for providing from the sputtering surface, sputters material Material；

Described magnet is one or more, installed in support frame outer surface；

Described housing unit is used for accommodating the support frame, magnet, and sputtering target material.

2. low temperature as claimed in claim 1 is low to damage film deposition system, it is characterised in that the support frame, further Including multiple ribs along its outer surface, one or more cooling-water ducts are defined between the rib and rib, it is described cold But aquaporin is used for circulating cooling agent to take away the heat of the support frame and the sputtering target material.

3. low temperature as claimed in claim 2 is low to damage film deposition system, it is characterised in that the magnet is fixed on the rib On bar, the magnet includes multiple parallel closed ring loops along the support frame outer surface.

4. low temperature as claimed in claim 1 is low to damage film deposition system, it is characterised in that the sputter material is deposited to The deposition surface of first substrate, wherein deposition surface direction and the window formed basically perpendicular to the support frame, sink Product system can also further comprise that transmission mechanism is used for producing phase between first substrate and the magnetron sputtering deposition source To motion.

5. low temperature as claimed in claim 4 is low to damage film deposition system, it is characterised in that further comprises the second substrate phase It is located at the side opposite with first substrate for the support frame, second substrate is included towards the support frame Second deposition surface of the window formed, second deposition surface are used for receiving what is sputtered out from the sputtering target material Sputter material, second deposition surface can be substantially perpendicular to the sputtering surface.

6. low temperature as claimed in claim 1 is low to damage film deposition system, it is characterised in that further comprises a vacuum work Skill chamber is used for accommodating magnetron sputtering deposition source and substrate.

7. low temperature as claimed in claim 4 is low to damage film deposition system, it is characterised in that first substrate is prefabricated In organic light emitting diode device, metal oxide, thin film transistor (TFT), including transparent conducting oxide layer, or RFID device At least one, the sputter material can encapsulate one or more prefabricated electronic devices on the first substrate.