CN206921503U - Integral type insulating tube type busbar - Google Patents
Integral type insulating tube type busbar Download PDFInfo
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- CN206921503U CN206921503U CN201720858895.1U CN201720858895U CN206921503U CN 206921503 U CN206921503 U CN 206921503U CN 201720858895 U CN201720858895 U CN 201720858895U CN 206921503 U CN206921503 U CN 206921503U
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- insulating barrier
- screen layer
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- poly tetrafluoroethylene
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Abstract
The utility model belongs to tube type bus technical field, discloses a kind of integral type insulating tube type busbar.It is mainly characterized in that：Including hollow contact tube, the first insulating barrier, first screen layer, the second insulating barrier, secondary shielding layer, the 3rd insulating barrier, the 3rd screen layer, the 4th insulating barrier, the 4th screen layer, the 5th insulating barrier are wound successively on the outside of described hollow contact tube；Between each adjacent insulating barrier and screen layer, between the poly tetrafluoroethylene of each insulating barrier and between the semiconductor poly tetrafluoroethylene of each screen layer be all that integrative-structure is bonded together into by adhesive linkage, have that current-carrying capacity is big, kelvin effect is low, power loss is small, allows big adaptability to changes, the completely weatherability that high mechanical strength, radiating condition are good, temperature rise is low, extremely strong, non-maintaining, corrosion resistant advantage；And the thickness of distance and each layer does not change between each layer, it is not easy to cause bus tear, thickness more uniform, good insulation preformance, and service life length.
Description
Technical field
The utility model belongs to tube type bus technical field, more particularly to a kind of integral type insulating tube type busbar.
Background technology
The conductor connection between grid power transmission wire and substation transformer, the jump in transmission line of electricity in power engineering
Current conductor is crossed in connection conductor and heavy DC deicing device in line, power equipment, all with tube type bus, is become in underground
Power station, subway transformer station or the transformer station of some particular/special requirements, in order to reduce floor space, transformer station is compacter, it is desirable to
The indices such as the insulating properties of tube type bus, decay resistance greatly improve.
The tube type bus used at present includes the wrapped all insulation type bus of filling type teflin tape and dry type integral type
Insulating tube type busbar, due to structure, following defect be present：First, the wrapped all insulation type of filling type teflin tape
Bus, due to teflin tape unusual light, it is impossible to reach the purpose being completely fixed.Producing, transport, installing and running
Cheng Zhong, teflin tape and screen layer are inevitable along bus axis direction moving, cause electric field distribution uneven and occur bad
Become；Second, dry type integral type insulating tube type busbar, using the poly tetrafluoroethylene of winding as insulating barrier, is partly led using winding
Body poly tetrafluoroethylene is arranged at intervals as screen layer, insulating barrier and screen layer, per layer insulating by multilayer polytetrafluoroethylarticles film
It is entwined, every layer of screen layer is entwined by semiconductor poly tetrafluoroethylene of the multilayer with carbon dust, after the completion of winding, is used
The method of high temperature sintering, each insulating barrier and screen layer are sintered together with hollow contact tube.Due to temperature in sintering process
Time control difficulty is big, and the breast denaturation of poly tetrafluoroethylene is irregular, causes bus tear, in uneven thickness, product qualification rate
Low, insulating properties are poor.
If winding the bus using the methods of current Fw Frp Pipe, following defect be present：First, bonding agent exists
It can not be tiled on poly tetrafluoroethylene uniformly, because the thickness of poly tetrafluoroethylene is very small, poor flatness be caused, so as to reduce
The insulating properties of whole bus；Second, hardening of resin is made by baking and curing after the completion of glass reinforced plastic pipeline twining at present, but it is right
For the bus, because the permeability of poly tetrafluoroethylene is poor, the solvent in bonding agent is difficult to be discharged, and forms bubble
Deng influenceing product quality and insulating properties.
Utility model content
The technical problems to be solved in the utility model is just to provide that a kind of process-cycle is short, has that current-carrying capacity is big, collection skin effect
Should it is low, power loss is small, allows that adaptability to changes is big, high mechanical strength, radiating condition are good, the low extremely strong weatherability of temperature rise, exempts from completely
Safeguard, corrosion resistant integral type insulating tube type busbar.
In order to solve the above technical problems, the technical solution adopted in the utility model is：
Including hollow contact tube, poly tetrafluoroethylene the first insulating barrier of composition is wound on the outside of described hollow contact tube,
Winding includes the semiconductor poly tetrafluoroethylene composition first screen layer of carbon dust on the outside of first insulating barrier；Described
Winding poly tetrafluoroethylene forms the second insulating barrier on the outside of one screen layer, is wound on the outside of second insulating barrier and includes carbon dust
Semiconductor poly tetrafluoroethylene composition secondary shielding layer；Poly tetrafluoroethylene composition the is wound on the outside of the secondary shielding layer
Three insulating barriers, the shielding of semiconductor poly tetrafluoroethylene composition the 3rd for including carbon dust is wound on the outside of the 3rd insulating barrier
Layer；Poly tetrafluoroethylene is wound on the outside of the 3rd screen layer and forms the 4th insulating barrier, is twined on the outside of the 4th insulating barrier
The 4th screen layer is formed around the semiconductor poly tetrafluoroethylene for including carbon dust；First insulating barrier, the second insulating barrier, the 3rd
Insulating barrier and the 4th insulating barrier are made up of multilayer polytetrafluoroethylarticles film, the first screen layer, secondary shielding layer, the 3rd screen layer
It is one or more layers semiconductor poly tetrafluoroethylene with the 4th screen layer, is forming first insulating barrier, the second insulation
The first adhesive linkage is provided between the adjacent poly tetrafluoroethylene of layer, the 3rd insulating barrier and the 4th insulating barrier；In composition institute
State first screen layer, secondary shielding layer, the 3rd screen layer and the 4th screen layer the adjacent semiconductor poly tetrafluoroethylene it
Between be provided with the second adhesive linkage；In first insulating barrier, first screen layer, the second insulating barrier, secondary shielding layer, the 3rd insulation
The 3rd adhesive linkage is provided between layer, the 3rd screen layer, the 4th insulating barrier and the 4th screen layer, in first insulating barrier and institute
State and be provided with the 4th adhesive linkage between hollow contact tube.
Its additional technical feature is：
Poly tetrafluoroethylene is wound on the outside of the 4th screen layer and forms the 5th insulating barrier, outside the 5th insulating barrier
The semiconductor poly tetrafluoroethylene that side winding includes carbon dust forms the 5th screen layer；
Restrictive coating is carried on the outside of the 5th screen layer；
The semiconductor polytetrafluoroethyl-ne for including carbon dust is provided between first insulating barrier and the hollow contact tube
Alkene film forms even electric field layer；
First insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier, the first screen layer, second
Screen layer, the 3rd screen layer and the 4th screen layer wrap for helical angle 30-45 degree half-stack package.
Integral type insulating tube type busbar provided by the utility model compared with prior art, has advantages below：First,
Due to including hollow contact tube, poly tetrafluoroethylene the first insulating barrier of composition being wound on the outside of described hollow contact tube, in institute
State the semiconductor poly tetrafluoroethylene composition first screen layer that winding on the outside of the first insulating barrier includes carbon dust；In first screen
Cover winding poly tetrafluoroethylene on the outside of layer and form the second insulating barrier, wound on the outside of second insulating barrier and include the half of carbon dust
Conductor poly tetrafluoroethylene forms secondary shielding layer；It is exhausted that poly tetrafluoroethylene composition the 3rd is wound on the outside of the secondary shielding layer
Edge layer, semiconductor poly tetrafluoroethylene the 3rd screen layer of composition for including carbon dust is wound on the outside of the 3rd insulating barrier；
Winding poly tetrafluoroethylene forms the 4th insulating barrier on the outside of 3rd screen layer, winds and includes on the outside of the 4th insulating barrier
4th screen layer is formed by the semiconductor poly tetrafluoroethylene of carbon dust；First insulating barrier, the second insulating barrier, the 3rd insulating barrier
It is made up of with the 4th insulating barrier multilayer polytetrafluoroethylarticles film, the first screen layer, secondary shielding layer, the 3rd screen layer and the 4th
Screen layer is one or more layers semiconductor poly tetrafluoroethylene, is forming first insulating barrier, the second insulating barrier, the 3rd
The first adhesive linkage is provided between insulating barrier and the adjacent poly tetrafluoroethylene of the 4th insulating barrier；Forming first screen
Cover and be provided between the adjacent semiconductor poly tetrafluoroethylene of layer, secondary shielding layer, the 3rd screen layer and the 4th screen layer
Second adhesive linkage；In first insulating barrier, first screen layer, the second insulating barrier, secondary shielding layer, the 3rd insulating barrier, the 3rd
Be provided with the 3rd adhesive linkage between screen layer, the 4th insulating barrier and the 4th screen layer, first insulating barrier with it is described hollow
The 4th adhesive linkage is provided between contact tube, between each adjacent insulating barrier and screen layer, the polytetrafluoroethylene (PTFE) of each insulating barrier
All it is that integral knot is bonded together into by adhesive linkage between film and between the semiconductor poly tetrafluoroethylene of each screen layer
Structure, with current-carrying capacity is big, kelvin effect is low, power loss is small, permission adaptability to changes is big, high mechanical strength, radiating condition are good, temperature rise
Low, extremely strong weatherability, completely non-maintaining, corrosion resistant advantage；And the thickness of distance and each layer does not become between each layer
Change, it is not easy to cause bus tear, thickness more uniform, good insulation preformance, service life length；Second, due to the described 4th
Winding poly tetrafluoroethylene forms the 5th insulating barrier on the outside of screen layer, is wound on the outside of the 5th insulating barrier and includes carbon dust
Semiconductor poly tetrafluoroethylene forms the 5th screen layer, for the bus that some electric currents are larger, further increases the electricity of bus
Gas performance；Third, due to carrying restrictive coating on the outside of the 5th screen layer, the service life of product is extended；Fourth, institute
State and the even electricity of the semiconductor poly tetrafluoroethylene for including carbon dust composition is provided between the first insulating barrier and the hollow contact tube
Field layer, conductive surface is more smooth, and Electric Field Distribution is uniform, is not likely to produce electric arc；Fifth, due to first insulating barrier, second
Insulating barrier, the 3rd insulating barrier and the 4th insulating barrier, the first screen layer, secondary shielding layer, the 3rd screen layer and the 4th shielding
Layer wraps for helical angle 30-45 degree half-stack package, and the product of generation is more smooth.
Brief description of the drawings
Fig. 1 is the structural representation in the utility model integral type insulating tube type busbar section；
Fig. 2 is the structural representation in integral type insulating tube type busbar section of the outside with the 5th insulating barrier and the 5th screen layer
Figure；
Fig. 3 is the structural representation in the integral type insulating tube type busbar section with even electric field layer on the outside of hollow contact tube；
Fig. 4 is the sectional view of the first insulating barrier；
Fig. 5 is the sectional view of first screen layer.
Embodiment
Structure to the utility model integral type insulating tube type busbar and use with reference to the accompanying drawings and detailed description
Principle is described in further details.
As shown in figure 1, the utility model integral type insulating tube type busbar includes hollow contact tube 1, in hollow contact tube 1
Outside winding poly tetrafluoroethylene forms the first insulating barrier 2, and the semiconductor that carbon dust is included in the winding of the outside of the first insulating barrier 2 gathers
Tetrafluoroethylene forms first screen layer 3；The second insulating barrier 4 is formed in the outside of first screen layer 3 winding poly tetrafluoroethylene,
The winding of the outside of second insulating barrier 4 includes the semiconductor poly tetrafluoroethylene composition secondary shielding layer 5 of carbon dust；In secondary shielding layer
5 outside winding poly tetrafluoroethylenes form the 3rd insulating barrier 6, include the semiconductor of carbon dust in the winding of the outside of the 3rd insulating barrier 6
Poly tetrafluoroethylene forms the 3rd screen layer 7；The 4th insulating barrier 8 is formed in the outside of the 3rd screen layer 7 winding poly tetrafluoroethylene,
The semiconductor poly tetrafluoroethylene for including carbon dust in the winding of the outside of the 4th insulating barrier 8 forms the 4th screen layer 9；As shown in figure 4,
First insulating barrier 2, the second insulating barrier 4, the 3rd insulating barrier 6 and the 4th insulating barrier 8 are made up of multilayer polytetrafluoroethylarticles film 98 respectively,
Between the adjacent poly tetrafluoroethylene 98 of the first insulating barrier 2, the second insulating barrier 4, the 3rd insulating barrier 6, the 4th insulating barrier 8 is formed
It is provided with the first adhesive linkage 11；As shown in figure 5, first screen layer 3, secondary shielding layer 5, the 3rd screen layer 7 and the 4th screen layer 9
For one or more layers semiconductor poly tetrafluoroethylene, first screen layer 3, secondary shielding layer 5, the 3rd screen layer 7 are being formed
And the 4th screen layer 9 the adjacent semiconductor poly tetrafluoroethylene between be provided with the second adhesive linkage 12；In the first insulating barrier
2nd, first screen layer 3, the second insulating barrier 4, secondary shielding layer 5, the 3rd insulating barrier 6, the 3rd screen layer 7, the 4th insulating barrier 8,
The 3rd adhesive linkage 13 is provided between four screen layers 9, the 4th is provided between the first insulating barrier 2 and the hollow contact tube 1
Adhesive linkage 14.
Between each adjacent insulating barrier and screen layer, between the poly tetrafluoroethylene of each insulating barrier and each screen layer
All it is that integrative-structure is bonded together into by adhesive linkage between semiconductor poly tetrafluoroethylene, has that current-carrying capacity is big, collection skin
Effect is low, power loss is small, allows adaptability to changes big, the weatherability that high mechanical strength, radiating condition are good, temperature rise is low, extremely strong, completely
Non-maintaining, corrosion resistant advantage；And the thickness of distance and each layer does not change between each layer, it is not easy to causes bus to tear
Split, thickness it is more uniform, good insulation preformance, service life length.
As shown in Fig. 2 the 5th insulating barrier 10 is formed in the 5th insulation in the outside of the 4th screen layer 9 winding poly tetrafluoroethylene
The semiconductor poly tetrafluoroethylene that the winding of the outside of layer 10 includes carbon dust forms the 5th screen layer 15, larger for some electric currents
Bus, further increase the electric property of bus.
As shown in Fig. 2 carrying restrictive coating 16 in the outside of the 5th screen layer 15, the service life of product is extended.
As shown in figure 3, the semiconductor poly- four for including carbon dust is provided between the first insulating barrier 2 and hollow contact tube 1
Fluoride film forms even electric field layer 17, and conductive surface is more smooth, and Electric Field Distribution is uniform, is not likely to produce electric arc.
First insulating barrier 2, the second insulating barrier 4, the 3rd insulating barrier 6 and the 4th insulating barrier 8, the first screen layer 3, second
Screen layer 5, the 3rd screen layer 7 and the 4th screen layer 9 wrap for helical angle 30-45 degree half-stack package, and the product of generation is more smooth.
Integral type insulating tube type busbar described in the utility model has the characteristics that：
First, process is simple, with short production cycle.Hollow contact tube, polytetrafluoroethylene (PTFE) film roll and semiconductor are installed first to gather
Tetrafluoroethene film roll；Fed in bonding agent hopper；Wind the first insulating barrier；Wind first screen layer；Winding second is exhausted successively
Edge layer, secondary shielding layer, the 3rd insulating barrier, the 3rd screen layer, the 4th insulating barrier, the 4th screen layer, the 5th insulating barrier, the 5th screen
Cover layer；Repeat the above steps, wind the second insulating barrier, secondary shielding layer, the 3rd insulating barrier, the 3rd screen layer, the 4th exhausted successively
Edge layer, the 4th screen layer, the 5th insulating barrier, the 5th screen layer；Winding protection jacket layer；Trim and pack.It is first dipped into bonding agent
In hopper, making all to carry bonding agent on poly tetrafluoroethylene two sides, bonding agent can uniformly be layered on the surface of poly tetrafluoroethylene,
Scraper roller above poly tetrafluoroethylene scrapes unnecessary bonding agent, makes bonding agent above poly tetrafluoroethylene more
Uniformly, the redundant adhesive below poly tetrafluoroethylene drops back into bonding agent hopper in the presence of bonding agent self gravitation
In, the poly tetrafluoroethylene with bonding agent is directly wound on hollow contact tube, but passes through drying mechanism, will be bonded
Solvent volatilization in agent, then on hollow contact tube is wrapped in, solvent is practically free of in bonding agent, bonding is more firm；
It is also as a same reason for semiconductor poly tetrafluoroethylene.
Second, using poly tetrafluoroethylene as insulating barrier, using the semiconductor poly tetrafluoroethylene with carbon dust, due to
All contain polytetrafluoroethylmaterial material, each layer is bonded using bonding agent, and each layer is bonded into a single integrated structure by bonding agent so that the party
The integral type insulating tube type busbar of method production has that current-carrying capacity is big, kelvin effect is low, power loss is small, allows that adaptability to changes is big, machine
Tool intensity height, the completely weatherability that radiating condition is good, temperature rise is low, extremely strong, non-maintaining, corrosion resistant advantage.
The scope of protection of the utility model is not limited solely to above-described embodiment, as long as structure and the utility model integral type
Insulating tube type busbar structure is identical, just falls the scope in the utility model protection.
Claims (5)
1. integral type insulating tube type busbar, including hollow contact tube, polytetrafluoroethylene (PTFE) is wound on the outside of described hollow contact tube
Film forms the first insulating barrier, on the outside of first insulating barrier winding include the semiconductor poly tetrafluoroethylene composition the of carbon dust
One screen layer；Poly tetrafluoroethylene is wound on the outside of the first screen layer and forms the second insulating barrier, in second insulating barrier
Outside winding includes the semiconductor poly tetrafluoroethylene composition secondary shielding layer of carbon dust；Wound on the outside of the secondary shielding layer
Poly tetrafluoroethylene forms the 3rd insulating barrier, and the semiconductor polytetrafluoroethyl-ne for including carbon dust is wound on the outside of the 3rd insulating barrier
Alkene film forms the 3rd screen layer；Poly tetrafluoroethylene is wound on the outside of the 3rd screen layer and forms the 4th insulating barrier, described
Winding includes semiconductor poly tetrafluoroethylene the 4th screen layer of composition of carbon dust on the outside of 4th insulating barrier；First insulation
Layer, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier are made up of multilayer polytetrafluoroethylarticles film, the first screen layer,
Two screen layers, the 3rd screen layer and the 4th screen layer are one or more layers semiconductor poly tetrafluoroethylene, it is characterised in that：
Forming the adjacent poly tetrafluoroethylene of first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier
Between be provided with the first adhesive linkage；Forming the first screen layer, secondary shielding layer, the 3rd screen layer and the 4th screen layer
The second adhesive linkage is provided between the adjacent semiconductor poly tetrafluoroethylene；In first insulating barrier, first screen layer,
Is provided between two insulating barriers, secondary shielding layer, the 3rd insulating barrier, the 3rd screen layer, the 4th insulating barrier and the 4th screen layer
Three adhesive linkages, the 4th adhesive linkage is provided between first insulating barrier and the hollow contact tube.
2. integral type insulating tube type busbar according to claim 1, it is characterised in that：Twined on the outside of the 4th screen layer
The 5th insulating barrier is formed around poly tetrafluoroethylene, the semiconductor polytetrafluoro for including carbon dust is wound on the outside of the 5th insulating barrier
Vinyl film forms the 5th screen layer.
3. integral type insulating tube type busbar according to claim 2, it is characterised in that：In the 5th screen layer outer side band
There is restrictive coating.
4. integral type insulating tube type busbar according to claim 1, it is characterised in that：First insulating barrier with it is described
The even electric field layer of semiconductor poly tetrafluoroethylene composition for including carbon dust is provided between hollow contact tube.
5. integral type insulating tube type busbar according to claim 1, it is characterised in that：It is first insulating barrier, second exhausted
Edge layer, the 3rd insulating barrier and the 4th insulating barrier, the first screen layer, secondary shielding layer, the 3rd screen layer and the 4th screen layer
Wrapped for helical angle 30-45 degree half-stack package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720858895.1U CN206921503U (en) | 2017-07-16 | 2017-07-16 | Integral type insulating tube type busbar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720858895.1U CN206921503U (en) | 2017-07-16 | 2017-07-16 | Integral type insulating tube type busbar |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206921503U true CN206921503U (en) | 2018-01-23 |
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ID=61347564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720858895.1U Active CN206921503U (en) | 2017-07-16 | 2017-07-16 | Integral type insulating tube type busbar |
Country Status (1)
| Country | Link |
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| CN (1) | CN206921503U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230521A (en) * | 2017-07-16 | 2017-10-03 | 深州市远征氟塑料有限公司 | The preparation method of integral type insulating tube type busbar, production special equipment and the bus |
-
2017
- 2017-07-16 CN CN201720858895.1U patent/CN206921503U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230521A (en) * | 2017-07-16 | 2017-10-03 | 深州市远征氟塑料有限公司 | The preparation method of integral type insulating tube type busbar, production special equipment and the bus |
| CN107230521B (en) * | 2017-07-16 | 2022-11-25 | 深州市远征氟塑料有限公司 | Integrated insulating tubular bus, special production equipment and preparation method of bus |
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