CN204680434U - Integral type dry type insulating tube type busbar - Google Patents
Integral type dry type insulating tube type busbar Download PDFInfo
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- CN204680434U CN204680434U CN201520461931.1U CN201520461931U CN204680434U CN 204680434 U CN204680434 U CN 204680434U CN 201520461931 U CN201520461931 U CN 201520461931U CN 204680434 U CN204680434 U CN 204680434U
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- insulating barrier
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- poly tetrafluoroethylene
- outer felt
- carbon dust
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Abstract
The utility model belongs to tube type bus and manufacture method technical field thereof, discloses a kind of integral type dry type insulating tube type busbar.Its technical characteristics is: comprise hollow contact tube, is wound around the first insulating barrier, the first screen, the second insulating barrier, secondary shielding layer, the 3rd insulating barrier, the 3rd screen, the 4th insulating barrier, the 4th screen outside described hollow contact tube successively.Polytetrafluoroethylmaterial material has good insulation property, and containing having the screen performance of conduction in the semiconductor poly tetrafluoroethylene of carbon dust, using above-mentioned poly tetrafluoroethylene and containing the semiconductor poly tetrafluoroethylene interval of carbon dust as insulating barrier and screen, become one structure through high temperature sintering, have that ampacity is large, kelvin effect is low, power loss is little, allow that adaptability to changes is large, mechanical strength is high, radiating condition good, the low extremely strong weatherability of temperature rise, completely non-maintaining, corrosion resistant advantage.
Description
Technical field
The utility model belongs to tube type bus and manufacture method technical field thereof, particularly relates to a kind of integral type dry type insulating tube type busbar.
Background technology
In power engineering, grid power transmission wire is connected with the conductor between substation transformer, crosses current conductor in the wire jumper in transmission line, the bonding conductor in power equipment and heavy DC deicing device, all use tube type bus, in underground substation, the subway transformer station of transformer station or some particular/special requirement, in order to reduce floor space, transformer station is compacter, requires that the indices such as the insulation property of tube type bus, decay resistance improve greatly.
The tube type bus of current use comprises filling type teflin tape wrapped all insulation type bus and dry type integral type dry type insulating tube type busbar, due to the reason of structure, there is following defect: one, filling type teflin tape wrapped all insulation type bus, due to teflin tape unusual light, the object be completely fixed can not be reached.In production, transport, installation and running, teflin tape and screen are collected together unavoidably along bus axis direction, cause electric field distribute uneven and deterioration occurs; Its two, dry type integral type dry type insulating tube type busbar, adopt epoxy resin as insulating barrier, with screen between insulating barrier, this bus is because of material cause, and the process-cycle is long, the bad control of technique, in drying course, epoxy resin easily splits, and rate of finished products is low, and insulating barrier and screen easily closely do not separate because combining, reduce the performance of product, product is short for useful life.
Utility model content
The technical problems to be solved in the utility model be just to provide a kind of process-cycle short, have that ampacity is large, kelvin effect is low, power loss is little, allow that adaptability to changes is large, mechanical strength is high, radiating condition good, the low extremely strong weatherability of temperature rise, completely non-maintaining, corrosion resistant integral type dry type insulating tube type busbar.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: comprise hollow contact tube, it is characterized in that: form the first insulating barrier in described hollow contact tube outer felt around poly tetrafluoroethylene, form the first screen at the wrapped semiconductor poly tetrafluoroethylene containing carbon dust of described first insulating barrier outer felt; The second insulating barrier is formed around poly tetrafluoroethylene, at the wrapped semiconductor poly tetrafluoroethylene composition secondary shielding layer containing carbon dust of described second insulating barrier outer felt in described first screen outer felt; In described secondary shielding layer outer felt around poly tetrafluoroethylene composition the 3rd insulating barrier, at wrapped semiconductor poly tetrafluoroethylene composition the 3rd screen containing carbon dust of described 3rd insulating barrier outer felt; In described 3rd screen outer felt around poly tetrafluoroethylene composition the 4th insulating barrier, at wrapped semiconductor poly tetrafluoroethylene composition the 4th screen containing carbon dust of described 4th insulating barrier outer felt.
Its additional technical feature is:
Pentasyllabic quatrain edge layer is formed around poly tetrafluoroethylene, at wrapped semiconductor poly tetrafluoroethylene composition the 5th screen containing carbon dust of described pentasyllabic quatrain edge layer outer felt in described 4th screen outer felt;
With restrictive coating outside described 5th screen;
The thickness of described poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; The thickness of described semiconductor poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; Described first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier are made up of four strata tetrafluoroethylenes, and described pentasyllabic quatrain edge layer is made up of three strata tetrafluoroethylenes; Described first screen, secondary shielding layer, the 3rd screen and the 4th screen are layer of semiconductor poly tetrafluoroethylene, and described 5th screen is two-layer semiconductor poly tetrafluoroethylene;
Described first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier, described first screen, secondary shielding layer, the 3rd screen and the 4th screen are that helical angle 30-45 degree half-stack package holds;
Between described first insulating barrier and described hollow contact tube, be provided with the semiconductor poly tetrafluoroethylene including carbon dust form even electric field layer.
Integral type dry type insulating tube type busbar provided by the utility model compared with prior art, have the following advantages: one, owing to comprising hollow contact tube, form the first insulating barrier in described hollow contact tube outer felt around poly tetrafluoroethylene, form the first screen at the wrapped semiconductor poly tetrafluoroethylene containing carbon dust of described first insulating barrier outer felt; The second insulating barrier is formed around poly tetrafluoroethylene, at the wrapped semiconductor poly tetrafluoroethylene composition secondary shielding layer containing carbon dust of described second insulating barrier outer felt in described first screen outer felt; In described secondary shielding layer outer felt around poly tetrafluoroethylene composition the 3rd insulating barrier, at wrapped semiconductor poly tetrafluoroethylene composition the 3rd screen containing carbon dust of described 3rd insulating barrier outer felt; In described 3rd screen outer felt around poly tetrafluoroethylene composition the 4th insulating barrier, at wrapped semiconductor poly tetrafluoroethylene composition the 4th screen containing carbon dust of described 4th insulating barrier outer felt; Polytetrafluoroethylmaterial material has good insulation property, and containing having the screen performance of conduction in the semiconductor poly tetrafluoroethylene of carbon dust, using above-mentioned poly tetrafluoroethylene and containing the semiconductor poly tetrafluoroethylene interval of carbon dust as insulating barrier and screen, become one structure through high temperature sintering, have that ampacity is large, kelvin effect is low, power loss is little, allow that adaptability to changes is large, the weatherability that mechanical strength is high, radiating condition good, temperature rise is low, extremely strong, completely non-maintaining, corrosion resistant advantage; They are two years old, owing to forming pentasyllabic quatrain edge layer in described 4th screen outer felt around poly tetrafluoroethylene, at wrapped semiconductor poly tetrafluoroethylene composition the 5th screen containing carbon dust of described pentasyllabic quatrain edge layer outer felt, for the bus that some electric currents are larger, further increase the electric property of bus; Its three, due to outside described 5th screen with restrictive coating, extend the useful life of product; Its four, the thickness due to described poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; The thickness of described semiconductor poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; Described first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier are made up of four strata tetrafluoroethylenes, and described pentasyllabic quatrain edge layer is made up of three strata tetrafluoroethylenes; Described first screen, secondary shielding layer, the 3rd screen and the 4th screen are layer of semiconductor poly tetrafluoroethylene, described 5th screen is two-layer semiconductor poly tetrafluoroethylene, thickness and the insulation property of insulating barrier can be ensure that, in turn ensure that the shielding properties of screen; Its five, because described first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier, described first screen, secondary shielding layer, the 3rd screen and the 4th screen are that helical angle 30-45 degree half-stack package holds; The product generated is more smooth, its six, form even electric field layer owing to being provided with the semiconductor poly tetrafluoroethylene including carbon dust between described first insulating barrier and described hollow contact tube, conductive surface is more smooth, and Electric Field Distribution is even, not easily produces electric arc.
Integral type dry type insulating tube type busbar manufacture method described in the utility model has following characteristics:
The first, operation is simple, with short production cycle.Only insulating barrier and screen need be wrapped on hollow contact tube successively, and then sinter in sintering furnace.Compared to current resin as insulating barrier, the production cycle shortens greatly.
Second, adopt poly tetrafluoroethylene as insulating barrier, adopt the semiconductor poly tetrafluoroethylene with carbon dust, owing to all containing polytetrafluoroethylmaterial material, therefore can be sintered into one when high temperature sintering structure, and the integral type dry type insulating tube type busbar that the method is produced has that ampacity is large, kelvin effect is low, power loss is little, allow that adaptability to changes is large, the weatherability that mechanical strength is high, radiating condition good, temperature rise is low, extremely strong, completely non-maintaining, corrosion resistant advantage.
Accompanying drawing explanation
Fig. 1 is the structural representation in the utility model integral type dry type insulating tube type busbar cross section;
Fig. 2 is the structural representation of outside with the integral type dry type insulating tube type busbar cross section of pentasyllabic quatrain edge layer, the 5th screen and protective sleeve;
Fig. 3 is the structural representation with the integral type dry type insulating tube type busbar cross section of even electric field layer outside hollow contact tube.
Embodiment
Below in conjunction with the drawings and specific embodiments, the structure of the utility model integral type dry type insulating tube type busbar and use principle are described in further details.
As shown in Figure 1, the utility model integral type dry type insulating tube type busbar comprises hollow contact tube 1, hollow contact tube 1 is generally copper pipe or aluminum pipe, form the first insulating barrier 2 in the outer felt of hollow contact tube 1 around poly tetrafluoroethylene, form the first screen 3 at the wrapped semiconductor poly tetrafluoroethylene containing carbon dust of the outer felt of the first insulating barrier 2; The second insulating barrier 4 is formed around poly tetrafluoroethylene, at the wrapped semiconductor poly tetrafluoroethylene composition secondary shielding layer 5 containing carbon dust of the second insulating barrier 4 outer felt in the first screen 3 outer felt; In secondary shielding layer 5 outer felt around poly tetrafluoroethylene composition the 3rd insulating barrier 6, at wrapped semiconductor poly tetrafluoroethylene composition the 3rd screen 7 containing carbon dust of the 3rd insulating barrier 6 outer felt; In the 3rd screen 7 outer felt around poly tetrafluoroethylene composition the 4th insulating barrier 8, at wrapped semiconductor poly tetrafluoroethylene composition the 4th screen 9 containing carbon dust of the 4th insulating barrier 8 outer felt.Semiconductor poly tetrafluoroethylene includes the composition of following weight portion: polytetrafluoroethylene: 100 parts; Carbon dust 3---10 parts, polytetrafluoroethylmaterial material has good insulation property, and containing having the screen performance of conduction in the semiconductor poly tetrafluoroethylene of carbon dust, using above-mentioned poly tetrafluoroethylene and containing the semiconductor poly tetrafluoroethylene interval of carbon dust as insulating barrier and screen, become one structure through high temperature sintering, there is the advantage that ampacity is large, kelvin effect is low, power loss is little, permission adaptability to changes is large, mechanical strength is high, radiating condition good, temperature rise is low.The features such as insulating material heat-resistance coefficient is high, simple installation, and shock resistance is strong.
As shown in Figure 2, pentasyllabic quatrain edge layer 10 is formed around poly tetrafluoroethylene in the 4th screen 9 outer felt, at wrapped semiconductor poly tetrafluoroethylene composition the 5th screen 11 containing carbon dust of pentasyllabic quatrain edge layer 10 outer felt, for the bus that some electric currents are larger, further increase the electric property of bus.
In the outside of the 5th screen 11 with restrictive coating 13, restrictive coating 13 includes the composition of following weight portion: polytetrafluoroethylene 100 parts, and RGB organic pigment 3-10 part, extends the useful life of product, but also be convenient to the differentiation of phase line.
The thickness of poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; The thickness of semiconductor poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; First insulating barrier 2, second insulating barrier 4, the 3rd insulating barrier 6 and the 4th insulating barrier 8 are made up of four strata tetrafluoroethylenes, and pentasyllabic quatrain edge layer 10 is made up of three strata tetrafluoroethylenes; First screen 3, secondary shielding layer 5, the 3rd screen 7 and the 4th screen 9 are layer of semiconductor poly tetrafluoroethylene, 5th screen 11 is two-layer semiconductor poly tetrafluoroethylene, thickness and the insulation property of insulating barrier can be ensure that, in turn ensure that the shielding properties of screen.Certainly, can be as required, first insulating barrier 2, second insulating barrier 4, the 3rd insulating barrier 6 and the 4th insulating barrier 8 can be made up of two-layer, three layers, five layers or more strata tetrafluoroethylenes, and pentasyllabic quatrain edge layer 10 is by being made up of two-layer, four layers or more strata tetrafluoroethylenes; First screen 3, secondary shielding layer 5, the 3rd screen 7 and the 4th screen 9 can be two-layer or more layer semiconductor poly tetrafluoroethylene, and the 5th screen 11 can be two-layer with semiconductor-on-insulator poly tetrafluoroethylene.
First insulating barrier 2, second insulating barrier 4, the 3rd insulating barrier 6 and the 4th insulating barrier 8, first screen 3, secondary shielding layer 5, the 3rd screen 7 and the 4th screen 9 hold for helical angle 30 degree of half-stack packages; The product generated is more smooth.
As shown in Figure 3, between the first insulating barrier 2 and hollow contact tube 1, be provided with the semiconductor poly tetrafluoroethylene including carbon dust form even electric field layer 12, conductive surface is more smooth, and Electric Field Distribution is even, not easily produces electric arc.
Protection range of the present utility model is not only confined to above-described embodiment, as long as structure is identical with the utility model integral type dry type insulating tube type busbar structure, just drops on the scope of the utility model protection.
Claims (6)
1. integral type dry type insulating tube type busbar, comprise hollow contact tube, it is characterized in that: form the first insulating barrier in described hollow contact tube outer felt around poly tetrafluoroethylene, form the first screen at the wrapped semiconductor poly tetrafluoroethylene containing carbon dust of described first insulating barrier outer felt; The second insulating barrier is formed around poly tetrafluoroethylene, at the wrapped semiconductor poly tetrafluoroethylene composition secondary shielding layer containing carbon dust of described second insulating barrier outer felt in described first screen outer felt; In described secondary shielding layer outer felt around poly tetrafluoroethylene composition the 3rd insulating barrier, at wrapped semiconductor poly tetrafluoroethylene composition the 3rd screen containing carbon dust of described 3rd insulating barrier outer felt; In described 3rd screen outer felt around poly tetrafluoroethylene composition the 4th insulating barrier, at wrapped semiconductor poly tetrafluoroethylene composition the 4th screen containing carbon dust of described 4th insulating barrier outer felt.
2. integral type dry type insulating tube type busbar according to claim 1, it is characterized in that: form pentasyllabic quatrain edge layer in described 4th screen outer felt around poly tetrafluoroethylene, at wrapped semiconductor poly tetrafluoroethylene composition the 5th screen containing carbon dust of described pentasyllabic quatrain edge layer outer felt.
3. integral type dry type insulating tube type busbar according to claim 2, is characterized in that: with restrictive coating outside described 5th screen.
4. integral type dry type insulating tube type busbar according to claim 2, is characterized in that: the thickness of described poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; The thickness of described semiconductor poly tetrafluoroethylene is 0.05-0.15mm, and width is 25---55mm; Described first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier are made up of four strata tetrafluoroethylenes, and described pentasyllabic quatrain edge layer is made up of three strata tetrafluoroethylenes; Described first screen, secondary shielding layer, the 3rd screen and the 4th screen are layer of semiconductor poly tetrafluoroethylene, and described 5th screen is two-layer semiconductor poly tetrafluoroethylene.
5. integral type dry type insulating tube type busbar according to claim 1, is characterized in that: between described first insulating barrier and described hollow contact tube, be provided with the semiconductor poly tetrafluoroethylene including carbon dust form even electric field layer.
6. integral type dry type insulating tube type busbar according to claim 1, is characterized in that: described first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier, described first screen, secondary shielding layer, the 3rd screen and the 4th screen are that helical angle 30-45 degree half-stack package holds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520461931.1U CN204680434U (en) | 2015-06-27 | 2015-06-27 | Integral type dry type insulating tube type busbar |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520461931.1U CN204680434U (en) | 2015-06-27 | 2015-06-27 | Integral type dry type insulating tube type busbar |
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| CN204680434U true CN204680434U (en) | 2015-09-30 |
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| CN201520461931.1U Active CN204680434U (en) | 2015-06-27 | 2015-06-27 | Integral type dry type insulating tube type busbar |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105391014A (en) * | 2015-12-31 | 2016-03-09 | 北京合锐清合电气有限公司 | Outlet bus bar device |
| CN107230521A (en) * | 2017-07-16 | 2017-10-03 | 深州市远征氟塑料有限公司 | The preparation method of integral type insulating tube type busbar, production special equipment and the bus |
| CN108666951A (en) * | 2017-03-27 | 2018-10-16 | 江苏士林电气设备有限公司 | A kind of D.C. isolation tube type bus for the urban transportation |
-
2015
- 2015-06-27 CN CN201520461931.1U patent/CN204680434U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105391014A (en) * | 2015-12-31 | 2016-03-09 | 北京合锐清合电气有限公司 | Outlet bus bar device |
| CN108666951A (en) * | 2017-03-27 | 2018-10-16 | 江苏士林电气设备有限公司 | A kind of D.C. isolation tube type bus for the urban transportation |
| CN107230521A (en) * | 2017-07-16 | 2017-10-03 | 深州市远征氟塑料有限公司 | The preparation method of integral type insulating tube type busbar, production special equipment and the bus |
| CN107230521B (en) * | 2017-07-16 | 2022-11-25 | 深州市远征氟塑料有限公司 | Integrated insulating tubular bus, special production equipment and preparation method of bus |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Du Tianmin Inventor after: Sun Zhongbang Inventor before: Du Tianmin |
|
| COR | Change of bibliographic data |