CN206920331U - A kind of high-precision infrared optics gas sensor - Google Patents
A kind of high-precision infrared optics gas sensor Download PDFInfo
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- CN206920331U CN206920331U CN201720363736.4U CN201720363736U CN206920331U CN 206920331 U CN206920331 U CN 206920331U CN 201720363736 U CN201720363736 U CN 201720363736U CN 206920331 U CN206920331 U CN 206920331U
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Abstract
A kind of high-precision infrared optics gas sensor, including control board（1）, analog signal processing circuit plate（2）, the source of infrared radiation（3）, thermopile detector（4）, air chamber（5）, metal shell（6）, filter screen（7）And output pin（8）；The control board（1）Including electric power management circuit, A/D converter, light source driving circuit and processor and peripheral circuit；The analog signal processing circuit plate（2）Including signaling conversion circuit and filtering and amplifying circuit；The air chamber（5）Using nickel plating technology, the reflection efficiency of infrared light is enhanced；The A/D converter is advantageous to the A/D conversions reliability overall with sensor using 12 ADC inside processor；The amplification and filtering of analog signal are devised bandwidth-limited circuit, effectively inhibit circuit noise, improved the degree of accuracy of sensor detection using low noise, rail-to-rail binary channels precision operational-amplifier；The sensitive circuit of sensor for temperature and device have made optimization design, it is ensured that sensor normal work and has higher accuracy of detection in wide temperature range.
Description
Technical field
It the utility model is related to a kind of gas sensor, and in particular to a kind of high-precision infrared optics gas sensor.
Background technology
Gas sensor as the important kind in field of sensing technologies, safety in production, energy-saving and emission-reduction, environmental protection,
The fields such as road traffic safety management, Aero-Space, modern military, anti-chemoprevention are feared, auto industry are widely used, and are above-mentioned
The support and guarantee of the industrial application of information technology, intelligent development, it is to ensure that human lives, production, the important core of national strategy safety
One of key areas of science and technology competition between technology, and country.Gas sensor be broadly divided into semiconductor-type, catalytic combustion type,
Electric chemical formula, infrared optics formula etc., wherein infrared optics formula is mainly used in the detection of carbon dioxide and fuel gas, infrared optics
The relatively other principle gaseous sensors of formula gas sensor are in sensitivity, selectivity, reliability, antijamming capability, service life
Etc. have a clear superiority, and measurement range it is wide, it is not poisoned, independent of oxygen.Because existing infrared optics formula gas passes
Sensor accuracy of detection in wide concentration and wide temperature range is relatively low, and the application and popularization to infrared optics formula gas sensor cause
It is difficult.
The content of the invention
The technical problems to be solved in the utility model is to provide a kind of high-precision infrared optics gas sensor, this gas
Body sensor can make high-precision gas Concentration Testing in wide concentration and wide temperature range.
In order to solve the above problems, the utility model is accomplished by the following way.
A kind of high-precision infrared optics gas sensor, including control board, analog signal processing circuit plate, infrared spoke
Source, thermopile detector, air chamber, metal shell, filter screen and output pin are penetrated, described metal shell one end is provided with filter screen, separately
One end is provided with output pin, and metal shell is internally provided with control board, analog signal processing circuit plate and air chamber, described
Air chamber both ends are respectively arranged with the source of infrared radiation and thermopile detector, the source of infrared radiation and thermopile detector and simulation
Signal processing circuit board is connected, and the analog signal processing circuit plate is connected with control board, and electricity is changed comprising signal
Road and filtering and amplifying circuit, the control board are connected with output pin, comprising power circuit, have source crystal oscillator, light source to drive
Dynamic circuit, signal acquisition circuit and 32 bit processors, it is described to there is source crystal oscillator to connect 32 bit processors, the 32 bit processor connection
Light source driving circuit, the light source driving circuit connect the source of infrared radiation, and the source of infrared radiation produces infrared light and passes through air chamber
Thermopile detector is radiated to, the thermopile detector connects signaling conversion circuit, the signaling conversion circuit connection amplification
Filter circuit, the filtering and amplifying circuit connect signal acquisition circuit, and the signal acquisition circuit connects 32 bit processors, described
32 bit processors connect output pin.
Based on above-mentioned, the air chamber uses ABS material, and its inwall uses nickel plating technology, can improve sensor detection
Sensitivity and applicability.
Based on above-mentioned, the metal shell uses 316 stainless steels, its corrosion resistance, elevated temperature strength than common stainless steel have compared with
Big raising, can meet it is severe it is cruel under the conditions of use.
Based on above-mentioned, the filter screen uses 600 mesh metallic sieves, prevents dust from entering.
Based on above-mentioned, 5.0VDC input voltages can be transformed to two-way 3.3VDC outputs by the power circuit, all the way
3.3VDC is exported for processor, signal acquisition circuit and control circuit, another way 3.3VDC export for the source of infrared radiation and
Light source driving circuit, two-way power supply can reduce the crosstalk between different circuits, be advantageous to sensor resistance to overturning and reliability
Raising.
Based on above-mentioned, the active crystal oscillator frequency signal output is connected to 32 bit processor clock signal input pins, has
Source crystal oscillator is encapsulated as 3025, output frequency 32MHz, relative with processor internal clocking and external passive clock, there is source crystal oscillator
Temperature range is wider, precision and reliability are higher.
Based on above-mentioned, the source of infrared radiation uses 3.3V low voltage drives, and its operating current is 90mA, its infra-red radiation
The wave-length coverage of source light is 0-5 μm.
Based on above-mentioned, the electronic switching device of the light source driving circuit is adopted as the P-channel of SOT23-3 encapsulation
MOSFET, the connection 3.3VDC power supply outputs of P-channel MOSFET source, the P-channel MOSFET drain electrode connection sources of infrared radiation, P-channel
MOSFET grids connect 32 bit processor I/O pins.
Based on above-mentioned, signaling conversion circuit input connection thermopile detector, output end connection filtering and amplifying circuit, bag
Containing 1 resistance and 1 electric capacity, precision is used as 0.5% metalfilmresistor and the electric capacity of NOP materials, it is ensured that signal conversion
Precision and temperature drift.
Based on above-mentioned, filtering and amplifying circuit input connection signaling conversion circuit, output end connection signal acquisition circuit, bag
Containing an operational amplifier and some passive devices, using low noise, rail-to-rail binary channels precision operational-amplifier and low temperature
Spend coefficient, high-precision passive device, it is ensured that keep the high accuracy of signal and preferable temperature special after signal amplification filtering
Property.
Based on above-mentioned, the signal acquisition circuit input connection filtering and amplifying circuit, output connection 32 bit processors simulation
Input pin, the A/D converter of the signal acquisition circuit are 12 A/D converters carried inside processor.
Based on above-mentioned, the processor uses 32 Cortex-M0 kernel low power processors, have abundant peripheral hardware,
Stronger antijamming capability and quick data-handling capacity, are readily applicable to Industry Control.
Compared with prior art, the beneficial effects of the utility model are：By the processing to processor input clock signal,
It can make that sensor stability is higher and operating temperature range is wider；By improving plenum surface handling process, sensing is improved
Device detection sensitivity and antijamming capability；By the optimization design to sensor temperature sensing unit, sensor temperature ensure that
Small and uniformity is higher as far as possible for drift；By to sensor construction design and material selection optimization, can be more severe
In the environment of normal use.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is circuit block diagram of the present utility model.
Fig. 3 is the utility model control board schematic diagram.
Fig. 4 is the utility model analog signal processing circuit plate schematic diagram.
Embodiment
The embodiment of the present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of high-precision infrared optics gas sensor, including control board（1）, analog signal processing
Circuit board（2）, the source of infrared radiation（3）, thermopile detector（4）, air chamber（5）, metal shell（6）, filter screen（7）And output pin
（8）, wherein metal shell（6）One end is provided with filter screen（7）, the other end is provided with output pin（8）, metal shell inside is set
There is control board（1）, analog signal processing circuit plate（2）And air chamber（5）, air chamber（5）Both ends are respectively arranged with infra-red radiation
Source（3）And thermopile detector（4）.
The control board（1）With analog signal processing circuit plate（2）Between pour into epoxy resin, metal shell（6）
With control board（1）, analog signal processing circuit plate（2）Between pour into epoxy resin, to ensure sensor sealing and interior
The stability of portion's element physical location.
As shown in Figures 2 and 3, control board includes power circuit（a）, have source crystal oscillator（b）, light source driving circuit（c）、
External interface（d）And processor circuit（e）.
The power circuit（a）Including two TC1185 high precision electro source chip U1, U2 and filter capacitor C1 ~ C4, input
3.6V ~ 5VDC, export two-way 3.3VDC, precision 1%.
It is described to have source crystal oscillator（b）For one 3025 encapsulation 32MHz crystal, output sine wave signal worst error ± 10x10- 6Hz, temperature coefficient 5ppm, temperature range are -40-85 degree, using have source crystal oscillator smaller than the temperature drift without source crystal oscillator, reliability and
Precision is higher.
The light source driving circuit（c）P-channel is used including a MOSFET FETs U3, continued flow resistance R1, U3
MOSFET, PMOS grid are that signal controls pin, are connected to processor I/O pin, pmos source is current input terminal, is connected to electricity
Source chip U1 output ends, PMOS drain electrodes are electric current output pin, are connected to the source of infrared radiation, continued flow resistance R1 one end is connected to power supply
Chip U1 output ends, the other end are connected to PMOS drain electrodes.When processor I/O pin exports low level, due to PMOS grid voltages
VG is less than pmos source voltage VS, PMOS conducting, because PMOS internal resistances are much smaller than continued flow resistance R1 and infrared light supply resistance, the upper electricity of R1
Stream about zero, now, infrared source working electric current is U1 output voltages and the business of infrared light supply resistance；Processor I/O pin exports
During high level, because PMOS grid voltages VG is more than pmos source voltage VS, PMOS cut-off, now, infrared source working electric current
The business of R1 resistances is added for U1 output voltages and infrared light supply resistance, this drive circuit can reduce light source switch moment to sensing
Impacted caused by device entirety power supply, sensor stability is obviously improved.
The external interface（d）Including power supply just, power supply is negative, tetra- pins of serial communication RX and TX.
The processor circuit（e）Including 32 Cortex-M0 kernel low power processor U5 and some periphery resistances
Container piece.
As shown in Figure 2 and Figure 4, analog signal processing circuit plate bag signaling conversion circuit（h）And filtering and amplifying circuit（i）.
The signaling conversion circuit（h）Including R5, R6, C17, C18 and U8, U8 is thermopile detector, and R5 and R6 are used
Resistance made of metal membrane material, the resistance have higher precision, wide temperature working range and an excellent temperature characterisitic, R5 and
The analog AC low current signal that thermopile detector exports is converted to analog AC small voltage signal by R6, and C17 and C18 are
NOP material electric capacity, the electric capacity equally have higher precision, wide temperature working range and excellent temperature characterisitic, C17 and C18
Analog AC small voltage signal is coupled to the input of filtering and amplifying circuit, while isolated DC signal, R5, R6, C17 and
C18 type selectings have a great influence to the precision and temperature characterisitic of primary signal.
The filtering and amplifying circuit（i）Including U7A, U7B and some peripheral capacitance resistance wares, U7A and U7B composition two-way amplifications
Filter circuit, structure is identical, by wherein all the way exemplified by, R11 and C20 composition LPFs, R11 and R10 ratio determine amplification
Gain, R7 and R8 partial pressures provide direct current offset for amplifying circuit, and to ensure the not super bound of output signal, R9 is amplifier positive
Input provides provides identical direct current offset with inverting input, to ensure that direct current signal is not exaggerated.
Claims (7)
1. a kind of high-precision infrared optics gas sensor, including control board, analog signal processing circuit plate, infra-red radiation
Source, thermopile detector, air chamber, metal shell, filter screen and output pin；The control board includes ARM Cortex-M0
The bit processor of kernel low-power consumption 32；It is accurate that the analog signal processing circuit plate includes a low noise, rail-to-rail binary channels
Operational amplifier；The source of infrared radiation uses incandescent light source；The air chamber uses ABS material, and its inwall uses nickel plating work
Skill；The metal shell uses 316 stainless steels；The filter screen uses 600 mesh metallic sieves.
A kind of 2. high-precision infrared optics gas sensor according to claim 1, it is characterised in that：The source of infrared radiation is adopted
With 3.3V low voltage drives, its operating current is 90mA, and the wave-length coverage of its source of infrared radiation light is 0-5 μm.
A kind of 3. high-precision infrared optics gas sensor according to claim 1, it is characterised in that：The operation amplifier
Device uses AD8662, and its operating voltage is 3.3V, and its single channel maximum operating currenbt is 1.4mA.
A kind of 4. high-precision infrared optics gas sensor according to claim 1, it is characterised in that：During 32 bit processor
The input of clock signal, which uses, source crystal oscillator, described to have source crystal oscillator to be encapsulated as 3025, output frequency 32MHz.
A kind of 5. high-precision infrared optics gas sensor according to claim 1, it is characterised in that：A/D converter is adopted
With 12 A/D converters carried inside 32 bit processors.
A kind of 6. high-precision infrared optics gas sensor according to claim 1, it is characterised in that：The light source driving
Electronic switching device in circuit uses P-channel MOSFET, is encapsulated as SOT23-3.
A kind of 7. high-precision infrared optics gas sensor according to claim 1, it is characterised in that：The power management
Chip uses high-precision LDO chips, is encapsulated as SOT23-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720363736.4U CN206920331U (en) | 2017-04-10 | 2017-04-10 | A kind of high-precision infrared optics gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720363736.4U CN206920331U (en) | 2017-04-10 | 2017-04-10 | A kind of high-precision infrared optics gas sensor |
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| Publication Number | Publication Date |
|---|---|
| CN206920331U true CN206920331U (en) | 2018-01-23 |
Family
ID=61305736
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720363736.4U Expired - Fee Related CN206920331U (en) | 2017-04-10 | 2017-04-10 | A kind of high-precision infrared optics gas sensor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109470643A (en) * | 2018-11-21 | 2019-03-15 | 中国科学院上海技术物理研究所 | A kind of infrared spectroscopy scaler based on gas sorption features spectrum |
| CN111426652A (en) * | 2020-04-14 | 2020-07-17 | 苏州冠德能源科技有限公司 | Middle and far infrared laser detection device |
| CN111693480A (en) * | 2020-05-26 | 2020-09-22 | 中国科学院上海微系统与信息技术研究所 | Vertical miniature infrared gas sensor |
| CN112953408A (en) * | 2021-01-26 | 2021-06-11 | 海南微氪生物科技股份有限公司 | Power supply method of operational amplifier for microbial fluorescence detector |
-
2017
- 2017-04-10 CN CN201720363736.4U patent/CN206920331U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109470643A (en) * | 2018-11-21 | 2019-03-15 | 中国科学院上海技术物理研究所 | A kind of infrared spectroscopy scaler based on gas sorption features spectrum |
| CN111426652A (en) * | 2020-04-14 | 2020-07-17 | 苏州冠德能源科技有限公司 | Middle and far infrared laser detection device |
| CN111693480A (en) * | 2020-05-26 | 2020-09-22 | 中国科学院上海微系统与信息技术研究所 | Vertical miniature infrared gas sensor |
| CN112953408A (en) * | 2021-01-26 | 2021-06-11 | 海南微氪生物科技股份有限公司 | Power supply method of operational amplifier for microbial fluorescence detector |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180123 Termination date: 20200410 |