CN206902284U - A kind of polycrystalline silicon ingot casting thermal field - Google Patents
A kind of polycrystalline silicon ingot casting thermal field Download PDFInfo
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- CN206902284U CN206902284U CN201720299892.9U CN201720299892U CN206902284U CN 206902284 U CN206902284 U CN 206902284U CN 201720299892 U CN201720299892 U CN 201720299892U CN 206902284 U CN206902284 U CN 206902284U
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- silicon ingot
- polycrystalline silicon
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- casting thermal
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Abstract
This application discloses a kind of polycrystalline silicon ingot casting thermal field, including side heater and top heater, the small default value of thickness in other regions beyond predeterminable area described in the thickness ratio of the predeterminable area of the top heater.The above-mentioned polycrystalline silicon ingot casting thermal field that the application provides, the silico briquette that head resistivity can be made relatively low concentrate on fixed region, reduce the troublesome operation that product examine operating personnel test mixing gallium silicon ingot different zones head resistivity one by one, improve production efficiency.
Description
Technical field
The utility model belongs to photovoltaic cell technical field, more particularly to a kind of polycrystalline silicon ingot casting thermal field.
Background technology
With reaching its maturity for photovoltaic market, competition, customer demand is no longer concentrated on the low product of cost,
But turn to the photovoltaic products of high-quality.A key point for influenceing photovoltaic products quality is exactly the light decay problem of silicon chip, now
Silicon chip light decay rate it is higher, therefore, it is relatively low and can be mass-produced how to obtain light decay, does not influence the light of production efficiency and cost
The problem of volt product is main at present.
In the prior art, in order to obtain low light attenuation silicon chip, mainly using gallium as foundry alloy, but because polycrystal silicon ingot exists
Resistivity distribution is larger after mixing gallium, the silicon ingot head resistivity skewness of different hot-zones, and head is using same line
In the case of, the relatively low silicon chip of many resistivity can be produced, the leakage current of low resistance position is higher, and battery efficiency is relatively low, increase
The operating difficulties of production, causes the production efficiency not high.
Utility model content
To solve the above problems, the utility model provides a kind of polycrystalline silicon ingot casting thermal field, head resistivity can be made inclined
Low silico briquette concentrates on fixed region, reduces product examine operating personnel and tests one by one mixing gallium silicon ingot different zones head resistivity
Troublesome operation, improve production efficiency.
A kind of polycrystalline silicon ingot casting thermal field provided by the utility model, including side heater and top heater, the top
The small default value of thickness in other regions beyond predeterminable area described in the thickness ratio of the predeterminable area of portion's heater.
Preferably, in above-mentioned polycrystalline silicon ingot casting thermal field, the predeterminable area is the region close to an angle or two angles.
Preferably, in above-mentioned polycrystalline silicon ingot casting thermal field, the predeterminable area is close to the position on a side.
Preferably, in above-mentioned polycrystalline silicon ingot casting thermal field, the default value is 3 millimeters to 10 millimeters.
Preferably, in above-mentioned polycrystalline silicon ingot casting thermal field, the top heater also includes being arranged at the predeterminable area
Ramp type plane between other described regions.
Preferably, in above-mentioned polycrystalline silicon ingot casting thermal field, the thickness range in other regions beyond the predeterminable area is
18 millimeters to 22 millimeters.
By foregoing description, above-mentioned polycrystalline silicon ingot casting thermal field provided by the utility model, because the top is heated
The small default value of thickness in other regions beyond predeterminable area described in the thickness ratio of the predeterminable area of device, therefore head can be made
The relatively low silico briquette of resistivity concentrates on fixed region, reduces product examine operating personnel to mixing gallium silicon ingot different zones head resistivity
The troublesome operation tested one by one, improve production efficiency.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, drawings in the following description are only
It is embodiment of the present utility model, for those of ordinary skill in the art, on the premise of not paying creative work, also
Other accompanying drawings can be obtained according to the accompanying drawing of offer.
Fig. 1 is the schematic diagram of the top heater for the first polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides；
Fig. 2 is the cross-sectional view of the top heater for the first polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides.
Embodiment
Core concept of the present utility model is to provide a kind of polycrystalline silicon ingot casting thermal field, and head resistivity can be made relatively low
Silico briquette concentrates on fixed region, reduce product examine operating personnel to mix gallium silicon ingot different zones head resistivity test one by one it is numerous
Trivial operation, improve production efficiency.
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
The first polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides, including side heater and top heater, institute
Top heater is stated as shown in figure 1, Fig. 1 is the top heater for the first polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides
Schematic diagram, the thickness 2 in other regions beyond predeterminable area 1 described in the thickness ratio of the predeterminable area 1 of the top heater is small
Default value.For more details with reference to figure 2, Fig. 2 is the top for the first polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides
The cross-sectional view of heater, can significantly it find out, the thickness in other regions 2 of the thickness ratio of predeterminable area 1 is smaller, thus can
Enough increase the resistance of this predeterminable area, impurity all gathers the region, it is only necessary to the parameter of this position of subsequent examination, from
And reduce the workload of product examine personnel.
The first polycrystalline silicon ingot casting thermal field provided by foregoing description, the embodiment of the present application, due to the top
The small default value of thickness in other regions beyond predeterminable area described in the thickness ratio of the predeterminable area of heater, therefore can make
The relatively low silico briquette of head resistivity concentrates on fixed region, reduces product examine operating personnel to mixing gallium silicon ingot different zones head electricity
The troublesome operation that resistance rate is tested one by one, improve production efficiency.
Second of polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides, is in the first above-mentioned polycrystalline silicon ingot casting thermal field
On the basis of, in addition to following technical characteristic：
The predeterminable area is the region close to an angle or two angles.
When predeterminable area is the region at a close angle, top heater is in this resistance in the region at an angle
Rate is relatively low, so as to, the relatively low silico briquette of head resistivity concentrates on the region, and follow-up can reduces troublesome operation, and when default
When region is the region at close two angles then similarly, here is omitted.
The third polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides, is in the first above-mentioned polycrystalline silicon ingot casting thermal field
On the basis of, in addition to following technical characteristic：
The predeterminable area is close to the position on a side.
In this case, it becomes possible to concentrate on the relatively low silico briquette of resistivity close to the position on a side, rather than existing
Have and be dispersed in each position in technology like that, be so also convenient for the operation of follow-up quality inspection personnel, improve operating efficiency.
The 4th kind of polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides, is in the first above-mentioned polycrystalline silicon ingot casting thermal field
On the basis of, in addition to following technical characteristic：
The default value is 3 millimeters to 10 millimeters.
It should be noted that this thinned thickness range can effectively ensure that predeterminable area is arrived in gallium element fractional condensation, make solid
Surely the resistivity for strengthening hot-zone is relatively low.
The 5th kind of polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides, is in the first above-mentioned polycrystalline silicon ingot casting thermal field
On the basis of, in addition to following technical characteristic：
With continued reference to Fig. 2, the top heater also include being arranged at the predeterminable area 1 and other described regions 2 it
Between ramp type plane 3.This ramp type plane can increase structural strength, prevent from occurring fractureing in installation process or
Occur phenomenon of arc discharge during use, it is also possible not do ramp type certainly.
The 6th kind of polycrystalline silicon ingot casting thermal field that the embodiment of the present application provides, be it is above-mentioned the first cast to the 4th kind of polysilicon
In ingot thermal field it is any on the basis of, in addition to following technical characteristic：
The thickness range in other regions beyond the predeterminable area is 18 millimeters to 22 millimeters.
It should be noted that corresponding thickness value can be selected according to required resistivity.
It is in summary, thinning in the heating zone of any corner location of ingot furnace inner top heater in above-mentioned each scheme,
Increasing its resistance, generate hot-zone in predeterminated position by force so that silicon ingot head resistivity is relatively low to concentrate on the pre- position set,
The problem of avoiding in the prior art testing different zones silicon ingot resistivity one by one and using different line standards, improves work
Efficiency.It is further to note that above-mentioned thermal field is also equally applicable to silicon substrate in addition to the silicon ingot suitable for adulterating gallium element
The dopant of the low segregation coefficient such as phosphorus in body.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or new using this practicality
Type.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments in the case where not departing from spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (6)
1. a kind of polycrystalline silicon ingot casting thermal field, including side heater and top heater, it is characterised in that the top heater
Predeterminable area thickness ratio described in other regions beyond predeterminable area the small default value of thickness.
2. polycrystalline silicon ingot casting thermal field according to claim 1, it is characterised in that the predeterminable area be close to an angle or
The region at two angles.
3. polycrystalline silicon ingot casting thermal field according to claim 1, it is characterised in that the predeterminable area is close to a side
Position.
4. polycrystalline silicon ingot casting thermal field according to claim 1, it is characterised in that the default value is 3 millimeters to 10 millis
Rice.
5. polycrystalline silicon ingot casting thermal field according to claim 1, it is characterised in that the top heater also includes being arranged at
Ramp type plane between the predeterminable area and other described regions.
6. according to the polycrystalline silicon ingot casting thermal field described in claim any one of 1-4, it is characterised in that beyond the predeterminable area
The thickness range in other regions is 18 millimeters to 22 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720299892.9U CN206902284U (en) | 2017-03-24 | 2017-03-24 | A kind of polycrystalline silicon ingot casting thermal field |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720299892.9U CN206902284U (en) | 2017-03-24 | 2017-03-24 | A kind of polycrystalline silicon ingot casting thermal field |
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| Publication Number | Publication Date |
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| CN206902284U true CN206902284U (en) | 2018-01-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637399A (en) * | 2017-03-24 | 2017-05-10 | 晶科能源有限公司 | Polysilicon ingot casting heat field |
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2017
- 2017-03-24 CN CN201720299892.9U patent/CN206902284U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637399A (en) * | 2017-03-24 | 2017-05-10 | 晶科能源有限公司 | Polysilicon ingot casting heat field |
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