CN206865424U - A kind of IPD areflexias low pass filter - Google Patents
A kind of IPD areflexias low pass filter Download PDFInfo
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- CN206865424U CN206865424U CN201720673862.XU CN201720673862U CN206865424U CN 206865424 U CN206865424 U CN 206865424U CN 201720673862 U CN201720673862 U CN 201720673862U CN 206865424 U CN206865424 U CN 206865424U
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Abstract
It the utility model is related to a kind of IPD areflexias low pass filter,Including metal conductor layer,The first silicon dielectric layer being located above the metal conductor layer,The second silicon dielectric layer being located above first silicon dielectric layer,The circuit structure layer being located above second silicon dielectric layer,The silicon oxide layer being located above the circuit structure layer and the resistance connected with circuit structure layer,Wherein described circuit structure layer includes the input turned on each other,Output end,First earth terminal,Second earth terminal and the 3rd earth terminal,The first inductance is connected with the circuit structure layer,Second inductance and the 3rd inductance,The silicon oxide layer includes the first electric capacity,Second electric capacity and the 3rd electric capacity,The resistance includes first resistor,Second resistance,3rd resistor and the 4th resistance,IPD areflexias low pass filter of the present utility model has high performance-price ratio,Small size,Temperature stability is good with outer areflexia,Performance is high,It is adapted to batch production.
Description
Technical field
The utility model relates to electronic technology field, is related to a kind of low pass bandpass filter, and in particular to a kind of IPD areflexias are low
Bandpass filter.
Background technology
Traditional low pass filter design circuit, it is the signal reflex Hui Yuan for being not intended to pass through by stopband.In big portion
Point application in, these signals for being reflected back source can cause intermodulation product, gain fluctuation etc. influence systematic function the problem of.Class
The nonlinear device like as frequency mixer can produce response to out of band signal, and to reflected signal caused by conventional lowpass filter
It is extremely sensitive.Design is close or meets that frequency mixer defines bandwidth and suppresses the wave filter of harmonic wave demand, is one and huge chooses
War.
So as to which radio system engineer would generally handle these influences using some simple and crude methods, such as quick
The front and rear insertion attenuator of inductor component or isolated amplifier.It is well known that these methods can reduce the signal to noise ratio of whole system and move
State scope.We can realize the absorption to stopband reflected signal, but such transition means using duplexer a port
There is larger space requirement to design circuit, and still can cause impedance mismatching because of some reflected signals.Certainly we
Differential type wave filter can be used, and (two-port is entered two-port and gone out, and increases by 90 ° of electric bridges realizations on input/output port and put down
Weighing apparatus-imbalance conversion) alleviate the influence of stopband reflected signal.But this technology causes the bandwidth of wave filter to be limited by electric bridge
Bandwidth, this cause it is this design be not suitable for broadband application.
In order to eliminate the reflected signal of generally existing in filter stop bend, the high Q (High-Q of semiconductor are now based onTM)
Silicon-copper integrated passive devices (IPD) technique and novel circuit topological structure, design a kind of areflexia low pass filter.
Utility model content
In view of the shortcomings of the prior art, in order to overcome above-mentioned problems of the prior art, the utility model
Purpose be to provide a kind of low pass filter of IPD technologies, this wave filter is designed using novel circuit topological structure, and is passed through
The technique of IPD high resistance silicon platforms realizes equivalent lumped circuit model.Wherein, lumped inductance uses planar spiral inductor；Lump
Electric capacity uses mim capacitor structure；Resistance is formed using 82%Ni and 18%Cr, is obtained by magnetron sputtering co-deposition method accurate
Resistance；The signal of this implementation absorption spectrum stopband portion, rather than source signal is returned into signal reflex；It is extra not needing
Under component, the extra unnecessary signal of generation is reduced, improves Dynamic Range and saves space, in many different applications
In there is good advantage.
To achieve these goals, the utility model can be realized by the following technical solutions：A kind of IPD areflexias
Low pass filter, including metal conductor layer, be located above the metal conductor layer the first silicon dielectric layer, be located at first silicon
The second silicon dielectric layer above dielectric layer, the circuit structure layer being located above second silicon dielectric layer, it is located at the circuit knot
Silicon oxide layer above structure layer and the resistance connected with circuit structure layer, wherein the circuit structure layer includes turning on each other
Input, output end, the first earth terminal, the second earth terminal and the 3rd earth terminal, be connected with first on the circuit structure layer
Inductance, the second inductance and the 3rd inductance, the silicon oxide layer include the first electric capacity, the second electric capacity and the 3rd electric capacity, the resistance
Including first resistor, second resistance, 3rd resistor and the 4th resistance.
Further：The input of the circuit structure layer connects the first inductance, connects between the first inductance and input
First resistor one end is connect, the first resistor other end is connected to the second inductance output end, the electricity of input connection first of the first inductance
The top crown of appearance, the bottom crown of the first electric capacity connect the input of the second inductance, and the is connected between the second inductance and the first electric capacity
One end of three resistance, the second inductance output end connect the first earth terminal.
Further：The 3rd resistor is connected with the 4th resistance, and is connected between 3rd resistor and the 4th resistance
Three electric capacity top crowns, the bottom crown of the 3rd electric capacity connect the second earth terminal.
Further：The first inductance other end is connected with output end, and is connected between the first inductance and output end
Two resistance one end, the second resistance other end are connected to the 3rd inductance output end, and the output end of the first inductance connects the second electric capacity
Top crown, the bottom crown of the second electric capacity connect the input of the 3rd inductance, and the 4th electricity is connected between the 3rd inductance and the second electric capacity
One end is hindered, the 3rd inductance output end connects the 3rd earth terminal.
Further：What first electric capacity, the second electric capacity, the 3rd electric capacity were taken is parallel plate capacitor, by flat
High dielectric material is filled between andante and improves capacitance.
Further：What first inductance, the second inductance, the 3rd inductance were taken is planar spiral structures, utilizes silicon
Planar etch technology is realized.
Further：The first resistor, second resistance, 3rd resistor, the 4th resistance are by 82%Ni and 18%Cr
Composition, accurate resistance is obtained by magnetron sputtering co-deposition method.
Compared to prior art, at least there is advantages below in a kind of low pass filter of IPD technologies of the present utility model：This
Utility model is designed using novel circuit topological structure, and realizes equivalent lumped-circuit by the technique of IPD high resistance silicon platforms
Model.Wherein, lumped inductance uses planar spiral inductor；Lumped capacity uses mim capacitor structure；Resistance using 82%Ni and
18%Cr is formed, and accurate resistance is obtained by magnetron sputtering co-deposition method；This implementation absorption spectrum stopband portion
Signal, rather than source signal is returned into signal reflex；In the case where not needing additional assemblies, the extra unnecessary signal of generation is reduced,
Improve Dynamic Range and save space, there is good advantage, absorption spectrum stopband portion in many different applications
Signal, rather than by signal reflex return source signal；In the case where not needing additional assemblies, the extra unnecessary letter of generation is reduced
Number, improve Dynamic Range and save space, and areflexia low pass filter provided by the utility model have high performance-price ratio,
Small size, temperature stability it is good with outer areflexia the features such as, and patch form can be processed into, be easy to and other microwave components collection
Into in addition, the utility model is to be based on IPD techniques, performance is high, is adapted to batch production.
Brief description of the drawings
Describe the utility model in detail with reference to the accompanying drawings and detailed description；
Fig. 1 is structural representation of the present utility model；
Fig. 2 is encapsulating structure schematic diagram of the present utility model；
Fig. 3 is simulation result schematic diagram of the present utility model.
Description of reference numerals：1st, metal conductor layer；2nd, the first silicon dielectric layer；3rd, the second silicon dielectric layer；4th, circuit structure layer；
5th, silicon oxide layer；6th, resistance；L1, the first inductance；L2, the second inductance；L3, the 3rd inductance；R1, first resistor；R2, the second electricity
Resistance；R3,3rd resistor；R4, the 4th resistance；C1, the first electric capacity；C2, the second electric capacity；C3, the 3rd electric capacity.
Embodiment
Technological means, creation characteristic, reached purpose and effect to realize the utility model are easy to understand, below
With reference to embodiment, the utility model is expanded on further.
As shown in Figure 1 to Figure 2, it illustrates a kind of IPD areflexias low pass filter of the present utility model, the utility model
IPD areflexia low-pass filter circuits structure include input IN, output end OUT, the first earth terminal GND1, the second earth terminal
GND2, the 3rd earth terminal GND3, the first inductance L1, the second inductance L2, the 3rd inductance L3, the first electric capacity C1, the second electric capacity C2,
Three electric capacity C3, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4.
First resistor R1 one end is connected between first inductance L1 and input IN, the first resistor R1 other ends are connected to second
Inductance L2 output ends, the first inductance L1 input connect the first electric capacity C1 top crown, the first electric capacity C1 bottom crown connection
Second inductance L2 input, connects 3rd resistor R3 one end between the second inductance L2 and the first electric capacity C1, the second inductance L2 is defeated
Go out the first earth terminal GND1 of end connection；The first inductance L1 other ends are connected with output end OUT, in the first inductance L1 and output end
Second resistance R2 one end is connected between OUT, the second resistance R2 other ends are connected to the 3rd inductance L3 output ends, the first inductance L1's
Output end connects the second electric capacity C2 top crown, and the second electric capacity C2 bottom crown connects the 3rd inductance L3 input, the 3rd electricity
The 4th resistance R4 one end is connected between sense L3 and the second electric capacity C2, the 3rd inductance L3 output ends connect the 3rd earth terminal GND1；The
Three resistance R3 and the 4th resistance R4 are connected, and the 3rd electric capacity C3 top crowns are connected between 3rd resistor R3 and the 4th resistance R4,
3rd electric capacity C3 bottom crown connects the second earth terminal GND2.
As shown in Fig. 2 encapsulating structure of the present utility model is (1.6mm × 0.9mm × 0.5mm), the IPD areflexia low passes
Wave filter includes metal conductor layer 1, the first silicon dielectric layer 2 for being located at the top of metal conductor layer 1, is located at the first silicon Jie
Second silicon dielectric layer 3 of the top of matter layer 2, the circuit structure layer 4 for being located at the top of the second silicon dielectric layer 3, it is located at the circuit
The silicon oxide layer 5 of the top of structure sheaf 4 and the resistance 6 connected with circuit structure layer 4, wherein the circuit structure layer 4 is included each other
Input IN, output end OUT, the first earth terminal GND1, the second earth terminal GND2 and the 3rd earth terminal GND3 being mutually conducted, institute
State and the first inductance L1, the second inductance L2 and the 3rd inductance L3 are connected with circuit structure layer 4, the silicon oxide layer 5 includes first
Electric capacity C1, the second electric capacity C2 and the 3rd electric capacity C3, the resistance 6 include first resistor R1, second resistance R2,3rd resistor R3 and
4th resistance R4.First resistor R1 and second resistance R2 is that 500 Ω, 3rd resistor R3 and the 4th resistance R4 are 20 Ω.
As shown in figure 3, the utility model areflexia low pass filter cutoff frequency is 2.45GHz, lead to in-band insertion loss
Less than 1.7dB；DC~30GHz standing waves are less than 15dB；In stopband, suppress to be more than 15dB in the range of 4.5GHz to 16GHz.DC~
30GHz voltage standing wave ratioes (VSWR) are less than 1.6.
The utility model is the areflexia low pass filter realized by the technique of IPD high resistance silicon platforms, based on IPD works
Skill employs a kind of new filter topology, the signal of its absorption spectrum stopband portion, rather than signal reflex is returned
Source signal；In the case where not needing additional assemblies, the extra unnecessary signal of generation is reduced, improves Dynamic Range and saves empty
Between.
Areflexia low pass filter provided by the utility model has the good band of high performance-price ratio, small size, temperature stability outer
The features such as areflexia, and patch form can be processed into, it is easy to integrate with other microwave components, in addition, the utility model is base
In IPD techniques, performance is high, is adapted to batch production.
The advantages of general principle and principal character of the present utility model and the utility model has been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the utility model is not restricted to the described embodiments, described in above-described embodiment and specification
Simply illustrate principle of the present utility model, on the premise of the spirit and scope of the utility model is not departed from, the utility model is also
Various changes and modifications are had, these changes and improvements are both fallen within claimed the scope of the utility model.The utility model
Claimed scope is by appended claims and its equivalent thereof.
Claims (7)
- A kind of 1. IPD areflexias low pass filter, it is characterised in that：Including metal conductor layer, it is located on the metal conductor layer First silicon dielectric layer of side, the second silicon dielectric layer being located above first silicon dielectric layer, it is located at second silicon dielectric layer The circuit structure layer of top, the silicon oxide layer being located above the circuit structure layer and the resistance connected with circuit structure layer, its Described in circuit structure layer include turning on each other input, output end, the first earth terminal, the second earth terminal and the 3rd connect Ground terminal, the first inductance, the second inductance and the 3rd inductance are connected with the circuit structure layer, and the silicon oxide layer includes the first electricity Hold, the second electric capacity and the 3rd electric capacity, the resistance include first resistor, second resistance, 3rd resistor and the 4th resistance.
- A kind of 2. IPD areflexias low pass filter as claimed in claim 1, it is characterised in that：The circuit structure layer it is defeated Enter the first inductance of end connection, first resistor one end is connected between the first inductance and input, the first resistor other end is connected to Second inductance output end, the input of the first inductance connect the top crown of the first electric capacity, the bottom crown connection second of the first electric capacity The input of inductance, one end of 3rd resistor, the second inductance output end connection first are connected between the second inductance and the first electric capacity Earth terminal.
- A kind of 3. IPD areflexias low pass filter as claimed in claim 2, it is characterised in that：The 3rd resistor and the 4th Resistance is connected, and the 3rd electric capacity top crown, the bottom crown connection the of the 3rd electric capacity are connected between 3rd resistor and the 4th resistance Two earth terminals.
- A kind of 4. IPD areflexias low pass filter as claimed in claim 3, it is characterised in that：The first inductance other end It is connected with output end, second resistance one end is connected between the first inductance and output end, the second resistance other end is connected to the 3rd Inductance output end, the output end of the first inductance connect the top crown of the second electric capacity, and the bottom crown of the second electric capacity connects the 3rd inductance Input, between the 3rd inductance and the second electric capacity connect the 4th resistance one end, the 3rd inductance output end connect the 3rd earth terminal.
- A kind of 5. IPD areflexias low pass filter as claimed in claim 4, it is characterised in that：First electric capacity, the second electricity What appearance, the 3rd electric capacity were taken is parallel plate capacitor, passes through and high dielectric material raising capacitance is filled between parallel-plate.
- A kind of 6. IPD areflexias low pass filter as claimed in claim 5, it is characterised in that：First inductance, the second electricity What sense, the 3rd inductance were taken is planar spiral structures, is realized using silicon planar etch technology.
- A kind of 7. IPD areflexias low pass filter as claimed in claim 6, it is characterised in that：The first resistor, the second electricity Resistance, 3rd resistor, the 4th resistance are made up of 82%Ni and 18%Cr, and precisely electricity is obtained by magnetron sputtering co-deposition method Resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720673862.XU CN206865424U (en) | 2017-06-12 | 2017-06-12 | A kind of IPD areflexias low pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720673862.XU CN206865424U (en) | 2017-06-12 | 2017-06-12 | A kind of IPD areflexias low pass filter |
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| Publication Number | Publication Date |
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| CN206865424U true CN206865424U (en) | 2018-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720673862.XU Active CN206865424U (en) | 2017-06-12 | 2017-06-12 | A kind of IPD areflexias low pass filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI699970B (en) * | 2018-04-04 | 2020-07-21 | 美商聯合大學公司 | Deep rejection reflectionless filters |
| CN111525903A (en) * | 2020-03-30 | 2020-08-11 | 北京邮电大学 | Broadband absorption type band-stop filter chip based on thin film IPD technology |
-
2017
- 2017-06-12 CN CN201720673862.XU patent/CN206865424U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI699970B (en) * | 2018-04-04 | 2020-07-21 | 美商聯合大學公司 | Deep rejection reflectionless filters |
| CN111525903A (en) * | 2020-03-30 | 2020-08-11 | 北京邮电大学 | Broadband absorption type band-stop filter chip based on thin film IPD technology |
| CN111525903B (en) * | 2020-03-30 | 2022-02-08 | 北京邮电大学 | Broadband absorption type band-stop filter chip based on thin film IPD technology |
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