CN206758459U

CN206758459U - A kind of LED substrate, epitaxial wafer, chip

Info

Publication number: CN206758459U
Application number: CN201720199907.4U
Authority: CN
Inventors: 庄文荣
Original assignee: All Time (shanghai) Photoelectric Technology Co Ltd
Current assignee: All Time (shanghai) Photoelectric Technology Co Ltd
Priority date: 2017-03-03
Filing date: 2017-03-03
Publication date: 2017-12-15
Anticipated expiration: 2027-03-03

Abstract

The utility model is related to LED technology field, more particularly to a kind of substrate repeatable LED utilized, it is a kind of can the LED chip of 360 ° of ultraviolet transmissive light, a kind of repeatable substrate utilized.The frontier of LED applications has not only been opened up, LED costs is more saved and improves its light emission rate.

Description

A kind of LED substrate, epitaxial wafer, chip

Technical field

LED technology field is the utility model is related to, more particularly to a kind of LED substrate, epitaxial wafer, chip.

Background technology

LED light emitting diodes, it is a kind of semiconductor electronic original paper that can convert electrical energy into luminous energy, is called forth generation Light source, have the advantages that energy-saving and environmental protection, safety, long lifespan, low energy consumption, A low-heat, high brightness, waterproof, it is miniature, shockproof, it is this Electronic component early in 1962 occur, from early stage luminosity feux rouges, to white light afterwards, and light brightness there has also been it is winged Jump, purposes is also from incipient indicator lamp, display board etc., to being widely used in normal lighting, display, television set etc. Deng.

Continue to develop with industry, the leap of technology is broken through, and application is widelyd popularize, and LED light efficiency is also constantly carrying Height, price constantly drop.So that LED is developed applied to various uncharted fields, the trial to frontier, also constantly intensify this Development of the LED technology to brand-new direction, build selection and the research and development of wafer substrates piece, each wall crystal layer material of extension from LED extensions Update, update, the breakthrough of chip novel matched technology, make LED more in accordance with its whole new set of applications field.

The content of the invention

The purpose of this utility model is to provide a kind of LED technology that can be applied to uncharted field, and its innovative technology is related to Including its substrate, epitaxial wafer, chip, there is provided a kind of repeatable LED utilized of substrate layer, one kind can 360 ° of transmission purples The LED chip of outer light, a kind of repeatable substrate utilized.

For achieving the above object, technical measures are as follows：

A kind of repeatable LED utilized of substrate layer, wherein accompanies SiO in LED wall crystal layer₂Nanosphere Layer.

The repeatable LED utilized of substrate layer described in the utility model, the substrate layer of wherein LED include Substrate and described SiO₂Nanometer layers of balls, wherein substrate is Sapphire Substrate, SiO₂Nanometer layers of balls be arranged on LED by In nearly Sapphire Substrate among two layers of wall crystal layer containing Ga, N.

The repeatable LED utilized of substrate layer described in the utility model, wherein two layers of wall crystal layer containing Ga, N For GaN layer and GaN layer, or GaN layer and GaN：Si layers.Certainly the wherein wall crystal layer containing Ga, N is needed according to purpose of utility model In enumerated or wall crystal layer containing other elements except above-mentioned, do not tire out one by one state herein.

The repeatable LED utilized of substrate layer described in the utility model, wherein in Sapphire Substrate, and two layers contains Have under Ga, N wall crystal layer, be AlN layers.First being built i.e. on Sapphire Substrate has one layer of AlN layer, then AlN layers it is on base containing Ga, N wall crystal layer.

The repeatable LED utilized of substrate layer described in the utility model, wherein LED is in SiO₂Nanosphere Layer at and substrate desquamation.That is the SiO of the only surplus residual of LED₂Nanometer layers of balls and in SiO₂The nanometer on base brilliant each extension of layers of balls Layer.

It is a kind of can 360 ° of saturating ultraviolet lights LED chip, wherein should be the position of substrate layer by being etched or laser or adopting The SiO remained with other lift-off technologies₂Nanometer layers of balls substitution.

It is described in the utility model can 360 ° of saturating ultraviolet lights LED chip, wherein SiO₂It is to contain Ga, N in nanometer layers of balls Wall crystal layer.It is close to SiO₂Contain Ga, N in the wall crystal layer of nanometer layers of balls.

It is described in the utility model can 360 ° of saturating ultraviolet lights LED chip, wherein the wall crystal layer containing Ga, N be GaN layer or GaN：Si layers.Certainly needed according to other application except Ga, N, other elements can also be contained.

A kind of repeatable substrate layer utilized, including SiO is provided with a sapphire substrate₂Nanometer layers of balls.It is i.e. described The repeatable substrate layer utilized includes Sapphire Substrate, SiO₂Nanometer layers of balls etc..

The repeatable substrate layer utilized described in the utility model, wherein in SiO₂Sapphire lining is close under nanometer layers of balls It is AlN layers on bottom.I.e. in SiO₂AlN layers are provided between nanometer layers of balls and Sapphire Substrate.

The repeatable substrate layer utilized described in the utility model, wherein in AlN layers and SiO₂Set between nanometer layers of balls There is GaN layer.GaN layer is first provided with i.e. on AlN layers, then SiO is set in GaN layer₂Nanometer layers of balls.

The utility model beneficial effect：On the one hand a kind of LED technology that can be applied to uncharted field is provided, such as promotes to plant Thing growing plants lamp.On the other hand the specific scientific achievement of the technology branch for each several part that the LED technology is related to is provided, its Innovative technology achievement is related to substrate layer, epitaxial wafer, chip and their preparation method：Provide a kind of repeatable utilization of substrate layer LED, it is a kind of can the LED chip of 360 ° of ultraviolet transmissive light, a kind of repeatable substrate layer utilized.The utility model relates to And innovative technology not only saved cost, improve the light emission rate of LED light emission rates, especially ultraviolet light.

Brief description of the drawings

Figure of description is in order to which the utility model is explained further, and is not the limitation to scope of protection of the utility model.

Fig. 1 is a kind of repeatable LED cross-sectional view utilized of substrate layer of the present utility model.

Fig. 2 is that the cross-section structure that a kind of repeatable LED utilized of substrate layer of the present utility model is gone after substrate shows It is intended to.

Fig. 3 is a kind of repeatable substrate layer cross-sectional view utilized of the present utility model.

Fig. 4 be it is of the present utility model it is a kind of can 360 ° of ultraviolet transmissive light LED chip cross-sectional view.

Wherein, 1- substrates（Such as Sapphire Substrate）, 2- cushions（Such as AlN layers）, wall crystal layers of the 3- containing Ga, N（Such as GaN Layer）, 4-SiO₂Nanometer layers of balls, wall crystal layers of the 5- containing Ga, N（Such as GaN layer or GaN：Si layers）, other extension wall crystal layers of 6-, 7- is residual The SiO stayed₂Nanometer layers of balls.

Embodiment

With reference to embodiment and accompanying drawing, the utility model is described in more detail.

Embodiment 1

Wherein, the repeatable LED utilized of a kind of substrate layer, wherein LED is in Sapphire Substrate Two layers of wall crystal layer containing Ga, N is sandwiched between SiO₂Nanometer layers of balls.That is SiO₂Nanometer layers of balls is arranged at two containing Ga, N Between wall crystal layer, i.e., two wall crystal layers containing Ga, N are by SiO₂Nanometer layers of balls separates.Wherein two layers wall crystal layer containing Ga, N For GaN layer and GaN layer, or GaN layer and GaN：Si layers.It is AlN in Sapphire Substrate, and under two layers of wall crystal layer containing Ga, N Layer.First being built i.e. on Sapphire Substrate has one layer of AlN layer, then in the on base wall crystal layer containing Ga, N of AlN layers.LED Taken out after the completion of being grown in MOCVD, in SiO₂Peeled off at nanometer layers of balls with substrate layer.That is the SiO of the only surplus residual of LED₂ Nanometer layers of balls and in SiO₂The nanometer on base brilliant each epitaxial layer of layers of balls.The substrate layer being stripped includes：Sapphire Substrate, AlN layers, The SiO of GaN layer and residual₂Nanometer layers of balls.The substrate layer of stripping can be re-used in LED extensions and build crystalline substance again.

Embodiment 2

Wherein, it is a kind of can 360 ° of saturating ultraviolet lights LED chip, LED after above-mentioned stripping substrate layer directly by with In chip processing procedure, wherein should be SiO of the position of substrate layer by being etched or using other lift-off technologies residual₂Nanometer layers of balls Substitution.Wherein SiO₂It is the wall crystal layer containing Ga, N in nanometer layers of balls.It is close to SiO₂Contain in the wall crystal layer of nanometer layers of balls Ga、N.Wall crystal layer containing Ga, N is GaN layer or GaN：Si layers.Because substrate layer is stripped, LED chip light extraction of the present utility model Rate is higher, especially in the LED core chip technology for going out ultraviolet light.In original art because of absorption of the substrate layer to ultraviolet light, So that ultraviolet light light emission rate is bad always, and the utility model introduces SiO₂Nanometer layers of balls technology, is effectively peeled off substrate layer, makes Obtaining ultraviolet LED technology has important breakthrough, for LED application emerging fields --- and promote the market of plant growth to provide one more Wide prospect.

Embodiment 3

Wherein, a kind of repeatable substrate layer utilized, including Sapphire Substrate, SiO₂Nanometer layers of balls.Wherein in sapphire SiO is set on substrate₂Nanometer layers of balls, in SiO₂It is AlN layers to be close under nanometer layers of balls in Sapphire Substrate.I.e. in SiO₂Nanometer AlN layers are provided between layers of balls and Sapphire Substrate, in AlN layers and SiO₂GaN layer is provided between nanometer layers of balls.I.e. in AlN GaN layer is first provided with layer, then SiO is set in GaN layer₂Nanometer layers of balls, the repeatable substrate layer utilized of the utility model is from upper past On include Sapphire Substrate, AlN layers, GaN layer and SiO₂Nanometer layers of balls, then in SiO₂In nanometer layers of balls it is grown in MOCVD His epitaxial layer, after other outer layer growths are complete, in SiO₂Peeled off at nanometer layers of balls, other epitaxial layers is peeled off with substrate layer, stripping Substrate layer from after can be used in extension again and build crystalline substance.

Above example is only embodiment of the present utility model, does not limit to above embodiment, and Fan Yiben is practical new Equivalent improvement, replacement or the modification that type principle is made belong to scope of protection of the utility model.

Claims

1. the repeatable LED utilized of a kind of substrate layer, it is characterised in that accompanied in described LED wall crystal layer SiO₂Nanometer layers of balls.

2. the repeatable LED utilized of substrate layer according to claim 1, it is characterised in that the lining of LED Bottom includes Sapphire Substrate and described SiO₂Nanometer layers of balls, SiO₂Nanometer layers of balls is arranged on LED close to sapphire On substrate among two layers of wall crystal layer containing Ga, N, LED successively include Sapphire Substrate, the wall crystal layer containing Ga, N, SiO₂Nanometer layers of balls, the wall crystal layer containing Ga, N.

3. the repeatable LED utilized of substrate layer according to claim 2, it is characterised in that contain for described two layers Ga, N wall crystal layer are GaN layer and GaN layer, or GaN layer and GaN：Si layers.

4. the repeatable LED utilized of substrate layer according to claim 2, it is characterised in that the Sapphire Substrate Upper is AlN layers, is the wall crystal layer containing Ga, N on AlN layers, is SiO on the wall crystal layer containing Ga, N₂Nanometer layers of balls, SiO₂Nanometer It is other wall crystal layers in layers of balls.

5. the repeatable LED utilized of substrate layer according to claim 1, it is characterised in that the LED In SiO₂Peeled off at nanometer layers of balls with substrate layer.

6. it is a kind of can 360 ° of saturating ultraviolet lights LED chip, it is characterised in that can as the substrate layer described in claim any one of 1-5 What the LED of recycling was prepared into, it should for substrate layer position by be etched or laser lift-off residual SiO₂Receive Rice layers of balls substitution.

7. it is according to claim 6 can 360 ° of saturating ultraviolet lights LED chip, it is characterised in that SiO₂Nanometer layers of balls on be containing There are Ga, N wall crystal layer.

8. it is according to claim 6 can 360 ° of saturating ultraviolet lights LED chip, it is characterised in that the wall crystal layer containing Ga, N is GaN layer or GaN：Si layers.

9. a kind of repeatable substrate layer utilized, it is characterised in that the repeatable substrate layer utilized is any one of claim 2-4 The substrate layer of the repeatable LED utilized of described substrate layer.

10. the repeatable substrate layer utilized according to claim 9, it is characterised in that described substrate serves as a contrast for sapphire Bottom.

11. the repeatable substrate layer utilized according to claim 10, it is characterised in that be close in Sapphire Substrate and be AlN layers.

12. the repeatable substrate layer utilized according to claim 11, it is characterised in that in AlN layers and SiO₂Nanometer layers of balls Between be provided with GaN layer.