CN206742251U - A kind of manufacture device of the matte of silicon chip surface - Google Patents
A kind of manufacture device of the matte of silicon chip surface Download PDFInfo
- Publication number
- CN206742251U CN206742251U CN201621296090.4U CN201621296090U CN206742251U CN 206742251 U CN206742251 U CN 206742251U CN 201621296090 U CN201621296090 U CN 201621296090U CN 206742251 U CN206742251 U CN 206742251U
- Authority
- CN
- China
- Prior art keywords
- electrode
- silicon chip
- tool
- piece pole
- chip surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 abstract description 15
- 235000008216 herbs Nutrition 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- 210000002268 wool Anatomy 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000009760 electrical discharge machining Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of manufacture device of the matte of silicon chip surface, including the piece pole of carrying silicon chip and the tool-electrode above piece pole, tool-electrode connect the conductive plate of the pulse power with piece pole；One or more wire electrode is provided with tool-electrode surface；Tool-electrode and piece pole are driven the surface for causing tool-electrode and piece pole to relatively move by drive device.The utility model is slipped over from silicon chip surface by more wire electrodes, sparked by the way of electrical discharge machining, and uniform matte is formed in silicon chip surface.By way of increasing wire electrode quantity or translational speed, preferable suede structure quickly can be produced in silicon chip surface, the production efficiency of making herbs into wool link greatly improved.The issuable metal residual of silicon chip surface can be greatly decreased compared to other methods in the utility model, be more beneficial for the production of battery link and improve the efficiency of battery, and production process does not produce bazardous waste, and it is very environmentally friendly to produce each link.
Description
Technical field
The utility model belongs to silicon chip process technology field, and the manufacture more particularly to a kind of matte of silicon chip surface fills
Put.
Background technology
Solar cell is a kind of photovoltaic effect using semi-conducting material, and solar radiation energy is converted directly into electric energy
A kind of new power generating system, there are many significant advantages, such as pollution-free, the advantages that energy is available anywhere, and service life is long.
The cleaning of electric energy, free of contamination renewable resource, the application of solar cell can be efficiently converted light energy into as a kind of
Enter the departments such as industry, agricultural, communication, household electrical appliance, electric power from military field, space industry.
Solar cell has achieved significant progress in China by development for many years, but manufacture of solar cells into
This height, the further popularization of solar cell of solar absorptance lower limit.Therefore for how to reduce production cost, carry
High efficiency, it is still the main target of current solar cell research.Uniform surface suede structure can increase the absorbing surface of light
Product, incident light is carried out multiple reflections on surface, reduce the reflectivity of light, be to carry so as to greatly improve solar absorption efficiency
The effective way of high cell photoelectric conversion efficiency.Therefore the uniform suede structure of silicon chip surface is made using rational method may be used also
To effectively reduce production cost, meet it is existing to solar cell the needs of.
Existing silicon chip surface etching method has chemical attack, mechanical carving groove, ion etching etc..Mechanical carving groove technology,
Technique is simple, but efficiency is low, and manufactured matte is uneven, and easily silicon chip is caused to damage.Ion etching, complex process,
Production Time is grown, and equipment complex and expensive, is not suitable for industrialized production.Chemical attack, it is currently manufactured silicon chip of solar cell
A kind of most common method of matte, production efficiency is high, but low to sunshine anti-reflection efficiency, and produces process and produce substantial amounts of give up
Water and waste residue, big for environment pollution, cost is also higher.
Utility model content
The defects of the utility model purpose is for the processing of existing matte silicon chip, there is provided a kind of preparation process is simple, easy
In realizing big industrialized production, making herbs into wool efficiency can be increased substantially, and the silicon chip surface of uniform suede structure can be obtained
The manufacture device of matte.
The utility model to achieve the above object, adopts the following technical scheme that：
A kind of manufacture device of the matte of silicon chip surface, it is characterised in that：It includes carrying piece pole and the position of silicon chip
Tool-electrode above the piece pole, the tool-electrode connect the conductive plate of the pulse power with piece pole；It is described
One or more wire electrode is provided with tool-electrode surface；The tool-electrode and piece pole are driven by drive device to be caused
The surface relative movement of the tool-electrode and piece pole.
A kind of form：The tool-electrode is plate electrode, and wire electrode array is provided with the plate electrode.
The wire electrode array is perpendicular to piece pole surface.
Another form：The tool-electrode is conductive rollers, and the conductive roller surface has been radially arranged wire electrode array.
The drive device is additionally operable to drive the piece pole to move up and down, and adjusts the tool-electrode and piece pole
The distance between.
A kind of manufacture method of the matte of the silicon chip surface of the manufacture device of matte using above-mentioned silicon chip surface, its feature
It is to comprise the steps：
（1）Prepare silicon chip, cleaning silicon chip surface；
（2）Silicon chip is fixed on the piece pole；
（3）Tool-electrode is connected to the two poles of the earth of the pulse power with piece pole, the pulse power is electric to tool-electrode and workpiece
Pole provides pulse voltage；
（4）Drive device driving instrument electrode and piece pole make it that the surface of the tool-electrode and piece pole is relative
Mobile, wire electrode quickly slips in silicon chip surface, forms edm process, uniform matte knot is made in silicon chip surface
Structure；
（5）By step（4）The silicon chip of the suede structure of middle acquisition is cleaned, dried.
It is further characterized by：The silicon chip is monocrystalline silicon piece, polysilicon chip, class monocrystalline silicon piece or direct silicon chip.
Step（4）Described in relative movement between tool-electrode and piece pole be the movement in horizontal direction.
Further：The step（4）Described in relative movement between tool-electrode and piece pole be tool-electrode
Move horizontally, or piece pole moves horizontally, or tool-electrode and piece pole move horizontally simultaneously.
Matte solar cell made from a kind of manufacture method of matte using above-mentioned silicon chip surface.
Utility model has advantages below:
1st, the utility model is slipped over from silicon chip surface by more wire electrodes by way of electrical discharge machining, passes through moment
Electric discharge, forms uniform matte, production method is simple, can meet the needs of big industrialized production in silicon chip surface.
2nd, the utility model can be manufactured quickly by way of increasing wire electrode quantity or translational speed in silicon chip surface
Go out preferable suede structure, the production efficiency of making herbs into wool link greatly improved.
3rd, silicon chip can be greatly decreased compared to other methods from silicon chip surface quick sliding in wire electrode of the present utility model
The issuable metal residual in surface, it is more beneficial for the production of battery link and improves the efficiency of battery.
4th, the utility model production process does not produce bazardous waste, and it is very environmentally friendly to produce each link.
5th, the matte solar cell of the utility model production has uniform suede structure, to sunshine reflection efficiency
It is low.
Brief description of the drawings
Fig. 1 is the manufacture device schematic diagram of the matte of a form of silicon chip surface of the utility model.
Fig. 2 is the manufacture device schematic diagram of the matte of the another form of silicon chip surface of the utility model.
Embodiment
As shown in figure 1, the manufacture device of the matte of a form of silicon chip surface, including the piece pole of carrying silicon chip and
Tool-electrode above piece pole, tool-electrode and piece pole connect the conductive plate of the pulse power；Tool-electrode is
Plate electrode, wire electrode array is provided with plate electrode.Wire electrode array is perpendicular to piece pole surface.Tool-electrode and work
Part electrode is driven the surface for causing tool-electrode and piece pole to relatively move by drive device.Drive device is additionally operable to drive work
Part electrode moves up and down, and adjusts the distance between tool-electrode and piece pole.
As shown in Fig. 2 the manufacture device of the matte of another form of silicon chip surface, includes carrying the piece pole of silicon chip
With the tool-electrode above piece pole, tool-electrode connects the conductive plate of the pulse power with piece pole；Tool-electrode
For conductive rollers, conductive roller surface has been radially arranged wire electrode array.Conductive rollers rotate during work so that the electrode of conductive roller surface
Silk circulation produces electric spark with the silicon chip on piece pole.Tool-electrode and piece pole are driven by drive device causes instrument electricity
Pole and the relative movement of the surface of piece pole.The drive device is additionally operable to drive the piece pole to move up and down, and adjusts institute
State the distance between tool-electrode and piece pole.
A kind of manufacture method of the matte of the silicon chip surface of the manufacture device of matte using above-mentioned silicon chip surface, including under
State step：
（1）Prepare silicon chip, cleaning silicon chip surface；The silicon chip can be monocrystalline silicon piece, polysilicon chip, class monocrystalline silicon piece or
Direct silicon chip.
（2）Silicon chip is fixed on the piece pole.
（3）Tool-electrode is connected to the two poles of the earth of the pulse power with piece pole, the pulse power is electric to tool-electrode and workpiece
Pole provides pulse voltage.
（4）Drive device driving instrument electrode and piece pole make it that the surface of the tool-electrode and piece pole is relative
Mobile, wire electrode quickly slips in silicon chip surface, forms edm process, uniform matte knot is made in silicon chip surface
Structure.Relative movement between tool-electrode and piece pole can be moved horizontally for tool-electrode or piece pole water
Translation is dynamic, or tool-electrode and piece pole move horizontally simultaneously.
（5）By step（4）The silicon chip of the suede structure of middle acquisition is cleaned, dried.
Matte solar cell made from a kind of manufacture method of matte using above-mentioned silicon chip surface.The matte solar energy
Battery has uniform suede structure, low to sunshine reflection efficiency.
The advantages of general principle of the present utility model, principal character and the utility model has been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the utility model is not restricted to the described embodiments, described in above-described embodiment and specification
Simply principle of the present utility model, the utility model also has respectively on the premise of the spirit and scope of the utility model is not departed from
Kind changes and improvements, these changes and improvements are both fallen within claimed the scope of the utility model.The requires of the utility model
Protection domain defined by appended claims and its equivalent.
Claims (5)
- A kind of 1. manufacture device of the matte of silicon chip surface, it is characterised in that：It includes carrying the piece pole of silicon chip and is located at Tool-electrode above the piece pole, the tool-electrode connect the conductive plate of the pulse power with piece pole；The work One or more wire electrode is provided with tool electrode surface；The tool-electrode and piece pole are driven by drive device causes institute State the surface relative movement of tool-electrode and piece pole.
- 2. the manufacture device of the matte of silicon chip surface as claimed in claim 1, it is characterised in that：The tool-electrode is flat board Electrode, wire electrode array is provided with the plate electrode.
- 3. the manufacture device of the matte of silicon chip surface as claimed in claim 2, it is characterised in that：The wire electrode array is vertical In piece pole surface.
- 4. the manufacture device of the matte of silicon chip surface as claimed in claim 1, it is characterised in that：The tool-electrode is conduction Roller, the conductive roller surface have been radially arranged wire electrode array.
- 5. the manufacture device of the matte of the silicon chip surface as described in claim any one of 1-4, it is characterised in that：The driving dress Put and be additionally operable to drive the piece pole to move up and down, adjust the distance between described tool-electrode and piece pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621296090.4U CN206742251U (en) | 2016-11-30 | 2016-11-30 | A kind of manufacture device of the matte of silicon chip surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621296090.4U CN206742251U (en) | 2016-11-30 | 2016-11-30 | A kind of manufacture device of the matte of silicon chip surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206742251U true CN206742251U (en) | 2017-12-12 |
Family
ID=60555078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621296090.4U Withdrawn - After Issue CN206742251U (en) | 2016-11-30 | 2016-11-30 | A kind of manufacture device of the matte of silicon chip surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206742251U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711247A (en) * | 2016-11-30 | 2017-05-24 | 无锡中硅新材料股份有限公司 | Apparatus and method for manufacturing pile face of silicon chip surface, and pile-face solar battery |
| CN108441861A (en) * | 2018-01-15 | 2018-08-24 | 中国人民解放军陆军装甲兵学院 | A kind of method and device of bundling electrode electric spark deposition machining multilayer film |
-
2016
- 2016-11-30 CN CN201621296090.4U patent/CN206742251U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711247A (en) * | 2016-11-30 | 2017-05-24 | 无锡中硅新材料股份有限公司 | Apparatus and method for manufacturing pile face of silicon chip surface, and pile-face solar battery |
| CN108441861A (en) * | 2018-01-15 | 2018-08-24 | 中国人民解放军陆军装甲兵学院 | A kind of method and device of bundling electrode electric spark deposition machining multilayer film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20171212 Effective date of abandoning: 20180504 |
|
| AV01 | Patent right actively abandoned |